FGHL75T65LQDT [ONSEMI]
IGBT - 650 V 75 A FS4 low Vce(sat) IGBT with full rated copack diode;
| 型号： | FGHL75T65LQDT |
| 厂家： | 
ONSEMI |
| 描述： | IGBT - 650 V 75 A FS4 low Vce(sat) IGBT with full rated copack diode 双极性晶体管 |
| 文件： | 总9页 (文件大小：338K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IGBT - Field Stop, Trench
75 A, 650 V
FGHL75T65LQDT
Description
th
Field stop 4 generation Low Vce(sat) IGBT technology and Full
current rated copak Diode technology.
www.onsemi.com
Features
V
I
V
CE(Sat)
CES
C
• Maximum Junction Temperature: T = 175°C
J
650 V
75 A
1.15 V
• Positive Temperature Co−efficient for Easy Parallel Operating
• High Current Capability
C
• Low Saturation Voltage: V
• 100% Of The Part Are Tested For I (Note 2)
= 1.15 V (Typ.) @ I = 75 A
C
CE(Sat)
LM
• Smooth & Optimized Switching
• Tight Parameter Distribution
• Co−Packed With Soft And Fast Recovery Diode
• RoHS Compliant
G
E
Typical Applications
• Solar Inverter
• UPS, ESS
G
• PFC, Converters
C
E
TO−247−3L
CASE 340CX
MAXIMUM RATINGS
Parameter
Collector to Emitter Voltage
Gate to Emitter Voltage
Symbol
Value
650
20
Unit
V
MARKING DIAGRAM
V
CES
V
GES
V
Transient Gate to Emitter Voltage
30
Collector Current @ T = 25°C (Note 1)
I
80
A
$Y&Z&3&K
FGHL
75T65LQDT
C
C
Collector Current @ T = 100°C
75
C
Pulsed Collector Current (Note 2)
Pulsed Collector Current (Note 3)
I
300
300
80
A
A
A
LM
I
CM
Diode Forward Current @ T = 25°C
I
F
C
(Note 1)
Diode Forward Current @ T = 100°C
75
C
Pulsed Diode Maximum Forward Current
I
300
469
234
A
FM
$Y
&Z
&3
&K
= ON Semiconductor Logo
= Assembly Plant Code
= 3−Digit Data Code
Maximum Power Dissipation @ T = 25°C
P
W
C
D
Maximum Power Dissipation @ T = 100°C
C
= 2−Digit Lot Traceability Code
Operating Junction Temperature /
Storage Temperature Range
T ,
−55 to
+175
°C
°C
J
FGHL75T65LQDT = Specific Device Code
T
STG
Maximum Lead Temp. For soldering
Purposes, ⅛” from case for 5 seconds
T
260
L
ORDERING INFORMATION
Device
Package
Shipping
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Value limit by bond wire.
FGHL75T65LQDT TO−247−3L
30 Units / Rail
2. V = 400 V, V = 15 V, I = 300 A, Inductive Load, 100% Tested.
CC
GE
C
3. Repetitive rating: pulse width limited by max. Junction temperature.
© Semiconductor Components Industries, LLC, 2021
1
Publication Order Number:
June, 2021 − Rev. 0
FGHL75T65LQDT/D
FGHL75T65LQDT
THERMAL CHARACTERISTICS
Parameter
Symbol
Value
0.32
0.6
Units
_C/W
_C/W
_C/W
Thermal Resistance Junction to Case, for IGBT
Thermal Resistance Junction to Case, for Diode
Thermal Resistance Junction to Ambient
R
q
JC
R
q
JC
R
40
q
JA
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector−emitter Breakdown Voltage,
Gate−emitter Short−circuited
V
V
= 0 V, I = 1mA
BVCES
650
−
−
0.6
−
−
V
V/_C
mA
GE
C
Temperature Coefficient of Breakdown
Voltage
= 0 V, I = 1mA
DBV
−
GE
C
CES
/DT
J
Collector−emitter Cut−off Current,
Gate−emitter Short−circuited
V
= 0 V, V = 650 V
I
−
250
400
GE
CE
CES
Gate Leakage Current, Collector−emitter
Short−circuited
V
GE
= 20 V, V = 0 V
I
−
−
nA
CE
GES
ON CHARACTERISTICS
Gate−emitter Threshold Voltage
Collector−emitter Saturation Voltage
V
= V , I = 75 mA
V
GE(th)
3.0
−
4.5
6.0
1.35
−
V
V
GE
CE
C
V
1.15
1.22
V
= 15 V, I = 75 A, T = 25_C
= 15 V, I = 75 A, T = 175_C
CE(sat)
GE
C
J
V
GE
−
C
J
DYNAMIC CHARACTERISTICS
Input Capacitance
V
= 30 V, V = 0 V, f = 1 MHz
C
−
−
−
−
−
−
15300
181
68
−
−
−
−
−
−
pF
nC
CE
GE
ies
Output Capacitance
C
oes
Reverse Transfer Capacitance
Gate Charge Total
C
res
V
CE
= 400 V, I = 75 A, V = 15 V
Q
793
72
C
GE
g
Gate to Emitter Charge
Gate to Collector Charge
Q
Q
ge
gc
248
SWITCHING CHARACTERISTICS, INDUCTIVE LOAD
Turn−on Delay Time
T = 25_C
t
−
−
−
−
−
−
−
−
−
−
−
−
−
−
45
20
−
−
−
−
−
−
−
−
−
−
−
−
−
−
ns
J
d(on)
V
= 400 V, I = 37.5 A
CC
C
Rise Time
t
r
Rg = 4.7 W
V
GE
= 15 V
Turn−off Delay Time
Fall Time
t
608
160
0.78
1.36
2.14
48
d(off)
t
f
Turn−on Switching Loss
Turn−off Switching Loss
Total Switching Loss
Turn−on Delay Time
Rise Time
E
on
E
off
mJ
ns
E
ts
T = 25_C
t
t
J
d(on)
V
= 400 V, I = 75 A
CC
C
t
r
40
Rg = 4.7 W
V
GE
= 15 V
Turn−off Delay Time
Fall Time
568
128
1.88
2.38
4.26
d(off)
t
f
Turn−on Switching Loss
Turn−off Switching Loss
Total Switching Loss
E
on
E
off
mJ
E
ts
www.onsemi.com
2
FGHL75T65LQDT
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (continued)
J
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
SWITCHING CHARACTERISTICS, INDUCTIVE LOAD
Turn−on Delay Time
T = 175_C
t
−
−
−
−
−
−
−
−
−
−
−
−
−
−
44
24
−
−
−
−
−
−
−
−
−
−
−
−
−
−
ns
J
d(on)
V
= 400 V, I = 37.5 A
CC
C
Rise Time
t
r
Rg = 4.7 W
V
GE
= 15 V
Turn−off Delay Time
Fall Time
t
680
256
1.54
2.11
3.65
44
d(off)
t
f
Turn−on Switching Loss
Turn−off Switching Loss
Total Switching Loss
Turn−on Delay Time
Rise Time
E
on
E
off
mJ
ns
E
ts
T = 175_C
t
t
J
d(on)
V
= 400 V, I = 75 A
CC
C
t
r
44
Rg = 4.7 W
V
GE
= 15 V
Turn−off Delay Time
Fall Time
632
184
3.14
3.58
6.72
d(off)
t
f
Turn−on Switching Loss
Turn−off Switching Loss
Total Switching Loss
DIODE CHARACTERISTICS
Diode Forward Voltage
E
on
E
off
mJ
V
E
ts
V
F
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
1.65
1.55
105
59
2.1
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
I = 75 A, T = 25_C
F
J
I = 75 A, T = 175_C
F
J
Reverse Recovery Energy
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Reverse Recovery Energy
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Reverse Recovery Energy
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Reverse Recovery Energy
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
T = 25_C,
Erec
Trr
mJ
ns
nC
A
J
V
= 400 V, I = 37.5 A,
R
F
di /dt = 1000 A/ms
F
Qrr
Irr
574
20
T = 25_C,
Erec
Trr
152
87
mJ
ns
nC
A
J
V
= 400 V, I = 75 A,
R
F
di /dt = 1000 A/ms
F
Qrr
Irr
794
18
T = 175_C,
Erec
Trr
550
119
2154
36
mJ
ns
nC
A
J
V
= 400 V, I = 37.5 A,
R
F
di /dt = 1000 A/ms
F
Qrr
Irr
T = 175_C,
Erec
Trr
764
145
2947
40
mJ
ns
nC
A
J
V
= 400 V, I = 75 A,
R
F
di /dt = 1000 A/ms
F
Qrr
Irr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
www.onsemi.com
3
FGHL75T65LQDT
TYPICAL CHARACTERISTICS
300
250
200
150
100
50
300
20 V
15 V
12 V
10 V
20 V
15 V
12 V
10 V
250
200
150
100
50
V
GE
= 8 V
V
GE
= 8 V
0
0
0
0.5
1
1.5
2
0
0.5
1
1.5
2
2.5
3
V
CE
, Collector−Emitter Voltage (V)
V
CE
, Collector−Emitter Voltage (V)
Figure 1. Typical Output Characteristics
Figure 2. Typical Output Characteristics
(TJ = 255C)
(TJ = 1755C)
150
125
100
75
300
250
200
150
100
50
Common Emitter
Common Emitter
V
= 20 V
V
= 15 V
CE
GE
T = 25°C
T = 25°C
J
J
T = 175°C
T = 175°C
J
J
50
25
0
0
0
0.5
1
1.5
2
2.5
3
0
2
4
6
8
10
V
CE
, Collector−Emitter Voltage (V)
V
GE
, Gate−Emitter Voltage (V)
Figure 4. Typical Transfer Characteristics
Figure 3. Typical Saturation Voltage Characteristics
2.0
Common Emitter
V
GE
= 15 V
C
10000
ies
150 A
1.5
1.0
0.5
1000
100
10
75 A
C
oes
I
C
= 40 A
C
res
Common Emitter
= 0 V, f = 1 MHz
V
GE
30
1
10
, Collector−Emitter Voltage (V)
−100
−50
0
50
100
150
200
T , Junction Temperature (°C)
J
V
CE
Figure 6. Capacitance Characteristics
Figure 5. Saturation Voltage vs. Junction Temperature
www.onsemi.com
4
FGHL75T65LQDT
TYPICAL CHARACTERISTICS (continued)
15
12
9
1000
100
Common Emitter
= 75 A
I
C
V
CC
= 200 V
10 ms
DC
300 V
100 ms
10
1 ms
10 ms
400 V
6
*Notes:
1
3
1. T = 25°C
J
2. T = 175°C
J
3. Single Pulse
0
0.1
1
10
100
1000
0
200
400
600
800
Q , Gate Charge (nC)
g
V
CE
, Collector−Emitter Voltage (V)
Figure 7. Gate Charge Characteristics
Figure 8. SOA Characteristics
10000
1000
100
t
d(on)
t
d(off)
100
t
r
Common Emitter
Common Emitter
= 400 V, V = 15 V
V
I
J
= 400 V, V = 15 V
CC
C
GE
V
CC
GE
= 75 A
t
f
I
= 75 A
C
T = 25°C
T = 25°C
J
T = 175°C
J
T = 175°C
J
10
10
0
10
20
30
40
50
0
10
20
30
40
50
R , Gate Resistance (W)
g
R , Gate Resistance (W)
g
Figure 9. Turn−On Characteristics vs. Gate
Figure 10. Turn−Off Characteristics vs. Gate
Resistance
Resistance
1000
1000
100
10
Common Emitter
V
= 400 V, V = 15 V
CC
G
T = 25°C
J
GE
t
d(off)
R
= 4.7 W
t
r
100 T = 175°C
J
t
f
t
d(on)
Common Emitter
10
1
V
= 400 V, V = 15 V
CC
G
GE
R
= 4.7 W
T = 25°C
J
T = 175°C
J
0
50
100
150
200
0
50
100
150
200
I , Collector Current (A)
C
I , Collector Current (A)
C
Figure 12. Turn−Off Characteristics vs. Collector
Figure 11. Turn−On Characteristics vs. Collector
Current
Current
www.onsemi.com
5
FGHL75T65LQDT
TYPICAL CHARACTERISTICS (continued)
10
10
E
off
E
off
1
Common Emitter
Common Emitter
V
I
J
= 400 V, V = 15 V
V
= 400 V, V = 15 V
CC
C
T = 25°C
GE
CC
G
GE
E
on
= 75 A
R
= 4.7 W
E
on
T = 25°C
J
T = 175°C
J
T = 175°C
J
1
0,1
0
10
20
30
40
50
0
30
60
90
120
150
R , Gate Resistance (W)
g
I , Collector Current (A)
C
Figure 13. Switching Loss vs. Gate Resistance
Figure 14. Switching Loss vs. Collector Current
300
50
45
40
35
30
25
20
15
10
5
Common Emitter
T = 25°C
J
250
200
150
100
50
T = 175°C
J
V
F
= 400 V
R
I = 75 A
T = 25°C
J
T = 175°C
J
0
0
1400
0
1
2
3
4
5
400
600
800
1000
1200
1600
V , Forward Voltage (V)
F
di /dt, Diode Current Slop (A/ms)
F
Figure 15. Forward Characteristics
Figure 16. Reverse Recovery Current
3500
3000
2500
2000
1500
1000
500
250
200
150
100
50
V
F
= 400 V
R
I = 75 A
T = 25°C
J
T = 175°C
J
V
F
= 400 V
R
I = 75 A
T = 25°C
J
T = 175°C
J
0
400
0
400
600
800
1000
1200
1400
1600
600
800
1000
1200
1400
1600
di /dt, Diode Current Slop (A/ms)
F
di /dt, Diode Current Slop (A/ms)
F
Figure 18. Stored Charge
Figure 17. Reverse Recovery Time
www.onsemi.com
6
FGHL75T65LQDT
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
1
0.1
0.5
0.2
P
DM
t
1
0.1
t
2
Duty Factor, D = t /t
0.05
0.02
1
2
Peak T = P x Z + T
q
j
dm
jc
c
0.01
R
R2
1
0.01
C = t / R
2
C = t / R
1
2
2
0.001
1
1
Single Pulse
i:
1
2
3
4
ri[K/W]:
t[s]:
0.0050
0.0742
0.1171
0.0753
5.432E−6 1.093E−4 1.815E−3 1.054E−2
0.0001
−5
−4
−6
−3
−2
−1
0
1
10
10
10
10
10
10
10
10
Rectangular Pulse Duration (s)
Figure 19. Transient Thermal Impedance of IGBT
1
0.5
0.2
P
DM
0.1
0.1
t
1
t
2
0.05
0.02
Duty Factor, D = t /t
1
q
2
jc
Peak T = P x Z + T
j
dm
c
0.01
0.001
R
R2
1
0.01
C = t / R
2 2
C = t / R
1 1
2
1
Single Pulse
i:
1
2
3
4
ri[K/W]:
t[s]:
0.0103
0.0950
0.1905
0.1280
1.223E−5 1.891E−4 3.570E−3 3.842E−2
0.0001
−5
−4
−6
−3
−2
−1
0
1
10
10
10
10
10
10
10
10
Rectangular Pulse Duration (s)
Figure 20. Transient Thermal Impedance of Diode
www.onsemi.com
7
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−3LD
CASE 340CX
ISSUE A
DATE 06 JUL 2020
GENERIC
MARKING DIAGRAM*
XXXXX = Specific Device Code
A
Y
= Assembly Location
= Year
WW
G
= Work Week
= Pb−Free Package
XXXXXXXXX
AYWWG
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON93302G
TO−247−3LD
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2018
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
ADDITIONAL INFORMATION
TECHNICAL PUBLICATIONS:
Technical Library: www.onsemi.com/design/resources/technical−documentation
onsemi Website: www.onsemi.com
ONLINE SUPPORT: www.onsemi.com/support
For additional information, please contact your local Sales Representative at
www.onsemi.com/support/sales
相关型号：
FGHL75T65MQDTL4
IGBT - 650 V 75 A FS4 medium switching speed IGBT with full rated copack diode
ONSEMI
©2020 ICPDF网 联系我们和版权申明