FGHL50T65MQDT [ONSEMI]
IGBT - 650 V 50 A FS4 medium switching speed IGBT with full rated copack diode;
| 型号： | FGHL50T65MQDT |
| 厂家： | 
ONSEMI |
| 描述： | IGBT - 650 V 50 A FS4 medium switching speed IGBT with full rated copack diode 双极性晶体管 |
| 文件： | 总10页 (文件大小：413K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Is Now
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www.onsemi.com
onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without
notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality,
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liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
Field Stop Trench IGBT
650 V, 50 A
FGHL50T65MQDT
Field stop 4 generation mid speed IGBT technology copacked
th
with full rated current diode.
Features
www.onsemi.com
• Maximum Junction Temperature: T = 175°C
J
• Positive Temperature Co−efficient for Easy Parallel Operating
• High Current Capability
50 A, 650 V
CESat = 1.45 V
V
• Low Saturation Voltage: V
= 1.45 V (Typ.) @ I = 50 A
C
CE(Sat)
• 100% of the Parts are Tested for I (Note 2)
LM
• Smooth and Optimized Switching
• Tight Parameter Distribution
• RoHS Compliant
C
Typical Applications
• Solar Inverter
• UPS, ESS
G
E
• PFC, Converters
MAXIMUM RATINGS
Parameter
Symbol Value
Unit
V
Collector to Emitter Voltage
V
CES
V
GES
650
G
Gate to Emitter Voltage
Transient Gate to Emitter Voltage
20
30
V
C
E
TO−247−3L
CASE 340CX
Collector Current (Note 1)
@ T = 25°C
I
C
80
50
A
C
@ T = 100°C
C
Pulsed Collector Current (Note 2)
Pulsed Collector Current (Note 3)
I
200
200
A
A
A
LM
MARKING DIAGRAM
I
CM
Diode Forward Current (Note 1) @ T
@ T
25°C
100°C
I
F
60
50
C =
C =
Pulsed Diode Maximum Forward Current
I
200
A
FM
Maximum Power Dissipation @ T = 25°C
P
268
134
W
C
D
$Y&Z&3&K
FGHL
@ T = 100°C
C
50T65MQDT
Operating Junction and Storage Temperature
Range
T ,
−55 to
+175
°C
°C
J
T
STG
Maximum Lead Temp. for Soldering
Purposes (1/8″ from case for 5 s)
T
260
L
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Value limit by bond wire
$Y
&Z
&3
&K
= ON Semiconductor Logo
= Assembly Plant Code
= 3−Digit Date Code
= 2−Digit Lot Traceability Code
2. V = 400 V, V = 15 V, I = 200 A, Inductive Load, 100% tested
CC
GE
C
FGHL50T65MQDT = Specific Device Code
3. Repetitive rating: pulse width limited by max. junction temperature
ORDERING INFORMATION
Device
Package
Shipping
FGHL50T65MQDT TO−247−3L 30 Units / Tube
© Semiconductor Components Industries, LLC, 2020
1
Publication Order Number:
April, 2021 − Rev. 0
FGHL50T65MQDT/D
FGHL50T65MQDT
THERMAL CHARACTERISTICS
Rating
Symbol
Value
0.56
0.74
40
Unit
°C/W
°C/W
°C/W
Thermal Resistance Junction−to−case, for IGBT
Thermal Resistance Junction−to−case, for Diode
Thermal Resistance Junction−to−ambient
R
q
JC
R
q
JC
R
q
JA
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector to Emitter Breakdown Voltage
V
C
= 0 V,
BV
650
−
−
−
V
GE
CES
I
= 1 mA
Temperature Coefficient of Breakdown
Voltage
V
C
= 0 V,
= 1 mA
−
0.6
V/°C
GE
DBV
DT
CES
I
J
Collector−emitter Cut−off Current
V
CE
= 0 V,
I
−
−
−
−
250
400
mA
GE
CES
V
= 650 V
Gate Leakage Current
V
= 20 V,
= 0 V
I
nA
GE
GES
V
CE
ON CHARACTERISTICS
Gate to Emitter Threshold Voltage
Collector to Emitter Saturation Voltage
V
= V , I = 50 mA
V
GE(th)
3.0
4.5
6.0
V
V
GE
CE
C
V
GE
= 15 V, I = 50 A, T = 25°C
= 15 V, I = 50 A, T = 175°C
V
CE(sat)
−
−
1.45
1.65
1.8
−
GE
C
J
V
C
J
DYNAMIC CHARACTERISTICS
Input Capacitance
V
= 30 V,
GE
C
−
−
−
−
−
−
3335
105
11
−
−
−
−
−
−
pF
nC
CE
ies
V
= 0 V,
Output Capacitance
C
oes
f = 1 MHz
Reverse Transfer Capacitance
Gate Charge Total
C
res
V
= 400 V,
= 50 A,
Q
99
CE
g
I
C
Gate to Emitter Charge
Gate to Collector Charge
Q
17
ge
gc
V
= 15 V
GE
Q
24
SWITCHING CHARACTERISTICS, INDUCTIVE LOAD
Turn−on Delay Time
Rise Time
T = 25°C,
CC
t
−
−
−
−
−
−
−
−
−
−
−
−
−
−
19
11
−
−
−
−
−
−
−
−
−
−
−
−
−
−
ns
J
d(on)
V
= 400 V,
= 25 A,
t
r
I
C
G
GE
R
= 6 W,
= 15 V
Turn−off Delay Time
Fall Time
t
96
d(off)
V
t
f
58
Turn−on Switching Loss
Turn−off Switching Loss
Total Switching Loss
Turn−on Delay Time
Rise Time
E
on
E
off
0.47
0.29
0.77
21
mJ
ns
E
ts
T = 25°C,
t
t
J
CC
C
d(on)
V
= 400 V,
= 50 A,
t
r
30
I
R
= 6 W,
G
Turn−off Delay Time
Fall Time
90
d(off)
V
= 15 V
GE
t
f
54
Turn−on Switching Loss
Turn−off Switching Loss
Total Switching Loss
E
on
E
off
1.19
0.63
1.82
mJ
E
ts
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2
FGHL50T65MQDT
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
SWITCHING CHARACTERISTICS, INDUCTIVE LOAD
Turn−on Delay Time
Rise Time
T = 175°C,
CC
t
t
−
−
−
−
−
−
−
−
−
−
−
−
−
−
18
14
−
−
−
−
−
−
−
−
−
−
−
−
−
−
ns
J
d(on)
V
= 400 V,
= 25 A,
t
r
I
C
G
GE
R
= 6 W,
= 15 V
Turn−off Delay Time
Fall Time
98
d(off)
V
t
f
88
Turn−on Switching Loss
Turn−off Switching Loss
Total Switching Loss
Turn−on Delay Time
Rise Time
E
on
E
off
0.9
0.55
1.44
19
mJ
ns
E
ts
T = 175°C,
t
t
J
CC
d(on)
V
= 400 V,
= 50 A,
t
r
32
I
C
R
= 6 W,
G
Turn−off Delay Time
Fall Time
99
d(off)
V
GE
= 15 V
t
f
82
Turn−on Switching Loss
Turn−off Switching Loss
Total Switching Loss
DIODE CHARACTERISTICS
E
on
E
off
1.87
1.08
2.95
mJ
V
E
ts
Diode Forward Voltage
I = 50 A, T = 25°C
F
V
F
−
−
1.65
1.55
2.1
J
I = 50 A, T = 175°C
F
−
J
DIODE SWITCHING CHARACTERISTICS, INDUCTIVE LOAD
Reverse Recovery Energy
T = 25°C, V = 400 V, I = 25 A,
E
rec
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
65
44
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
mJ
ns
nC
A
J
CE
F
di /dt = 1000 A/ms
F
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Diode Reverse Recovery Current
Reverse Recovery Energy
T
rr
Q
387
18
rr
I
rr
T = 25°C, V = 400 V, I = 50 A,
E
rec
128
79
mJ
ns
nC
A
J
CE
F
di /dt = 1000 A/ms
F
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Diode Reverse Recovery Current
Reverse Recovery Energy
T
rr
Q
681
17
rr
I
rr
T = 175°C, V = 400 V, I = 25 A,
E
rec
380
102
1482
29
mJ
ns
nC
A
J
CE
F
di /dt = 1000 A/ms
F
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Diode Reverse Recovery Current
Reverse Recovery Energy
T
rr
Q
rr
I
rr
T = 175°C, V = 400 V, I = 50 A,
E
rec
544
135
2023
30
mJ
ns
nC
A
J
CE
F
di /dt = 1000 A/ms
F
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Diode Reverse Recovery Current
T
rr
Q
rr
I
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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3
FGHL50T65MQDT
TYPICAL CHARACTERISTICS
200
150
100
50
200
20 V
T = 25°C
J
T = 175°C
J
20 V
15 V
12 V
10 V
15 V
12 V
150
100
50
V
GE
= 8 V
10 V
V
GE
= 8 V
0
0
0
1
2
3
4
5
0
1
2
3
4
5
V
CE
, Collector−Emitter Voltage (V)
V
CE
, Collector−Emitter Voltage (V)
Figure 1. Typical Output Characteristics (TJ = 255C)
Figure 2. Typical Output Characteristics (TJ = 1755C)
200
100
Common Emitter
Common Emitter
V
GE
= 15 V
V
CE
= 15 V
T = 25°C
T = 175°C
J
T = 25°C
T = 175°C
J
80
60
40
20
0
J
J
150
100
50
0
0
1
2
3
4
5
0
2
4
6
8
10
V
CE
, Collector−Emitter Voltage (V)
V
GE
, Gate−Emitter Voltage (V)
Figure 3. Typical Saturation Voltage Characteristics
Figure 4. Typical Transfer Characteristics
10000
1000
100
10
2.5
Common Emitter
V
GE
= 15 V
Cies
2.0
1.5
1.0
100 A
50 A
Coes
Cres
Common Emitter
= 0 V, f = 1 MHz
I
C
= 25 A
100
V
GE
1
30
−100
0
50
150
200
−50
1
10
, Collector−Emitter Voltage (V)
V
CE
T , Junction Temperature (°C)
J
Figure 6. Capacitance Characteristics
Figure 5. Saturation Voltage vs. Junction Temperature
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4
FGHL50T65MQDT
TYPICAL CHARACTERISTICS (continued)
15
12
9
1000
Common Emitter
= 50 A
I
C
V
CC
= 200 V
10 ms
100
DC
300 V
400 V
100 ms
1 ms
10 ms
10
1
6
*Notes:
1. T = 25°C
3
C
2. T = 175°C
J
3. Single Pulse
0
0.1
0
20
40
60
80
100
1
10
, Collector−Emitter Voltage (V)
CE
100
1000
Q , Gate Charge (nC)
V
g
Figure 7. Gate Charge Characteristics
Figure 8. SOA Characteristics
100
1000
100
10
tr
td(off)
td(on)
Common Emitter
tf
V
I
J
= 400 V, V = 15 V
= 400 V, V = 15 V
CC
C
T = 25°C
GE
= 50 A
T = 175°C
J
10
0
10
20
30
40
50
0
10
20
30
40
50
R , Gate Resistance (W)
g
R , Gate Resistance (W)
g
Figure 9. Turn−on Characteristics vs. Gate Resistance
Figure 10. Turn−off Characteristics vs. Gate Resistance
1000
500
Common Emitter
Common Emitter
V
= 400 V, V = 15 V
V
= 400 V, V = 15 V
CC
G
GE
CC
G
GE
R
= 6 W
R
= 6 W
T = 25°C
T = 25°C
J
J
tf
T = 175°C
T = 175°C
J
J
100
10
1
tr
100
td(off)
td(on)
10
0
30
60
90
120
150
0
30
60
90
120
150
I , Collector Current (A)
C
I , Collector Current (A)
C
Figure 11. Turn−on Characteristics vs. Collector Current Figure 12. Turn−off Characteristics vs. Collector Current
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5
FGHL50T65MQDT
TYPICAL CHARACTERISTICS (continued)
10
10
Common Emitter
V
I
J
= 400 V, V = 15 V
CC
C
T = 25°C
GE
= 50 A
Eon
Eon
T = 175°C
J
1
1
Eoff
Common Emitter
Eoff
V
= 400 V, V = 15 V
CC
G
GE
R
= 6 W
T = 25°C
J
T = 175°C
J
0.1
0.1
0
10
20
30
40
50
0
30
60
90
120
150
R , Gate Resistance (W)
g
I , Collector Current (A)
C
Figure 13. Switching Loss vs. Gate Resistance
Figure 14. Switching Loss vs. Collector Current
35
30
25
20
15
10
5
200
V
F
= 400 V
Common Emitter
T = 25°C
T = 175°C
J
R
I = 50 A
J
T = 25°C
J
T = 175°C
150
100
50
J
0
0
400
600
800
1000
1200
0
1
2
3
4
5
di /dt, Diode Current Slop (A/ms)
F
V , Forward Voltage (V)
F
Figure 15. Forward Characteristics
Figure 16. Reverse Recovery Current
250
200
150
100
50
2500
2000
1500
1000
500
V
F
= 400 V
R
I = 50 A
T = 25°C
J
T = 175°C
J
V
F
= 400 V
R
I = 50 A
T = 25°C
J
T = 175°C
J
0
0
400
600
800
1000
1200
400
600
800
1000
1200
di /dt, Diode Current Slop (A/ms)
F
di /dt, Diode Current Slop (A/ms)
F
Figure 17. Reverse Recovery Time
Figure 18. Stored Charge
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6
FGHL50T65MQDT
TYPICAL CHARACTERISTICS (continued)
1
0.5
P
DM
t
1
0.2
t
0.1
2
0.1
Duty Factor, D = t1 / t2
Peak T = Pdm x Zthjc + T
c
0.05
j
R
R
2
1
0.02
0.01
0.01
0.001
C = t / R C = t / R
1
1
1
2
2
2
i:
1
2
3
ri [K/W]: 0.1335
t [s]: 2.247E−4 1.858E−3 1.131E−2
0.1686
0.1521
Single Pulse
10
−6
−5
−4
−3
−2
−1
0
1
10
10
10
10
10
10
10
Rectangular Pulse Duration (s)
Figure 19. Transient Thermal Impedance of IGBT
1
0.5
P
DM
0.2
t
1
0.1
t
2
0.1
Duty Factor, D = t1 / t2
Peak T = Pdm x Zthjc + T
0.05
0.02
0.01
j
c
R
R
2
1
0.01
Single Pulse
C = t / R C = t / R
2
1
1
1
2
2
i:
1
2
3
4
ri [K/W]: 0.0461
0.1792
0.1930
0.0963
t [s]:
1.511E−5 4.742E−4 3.182E−3 1.304E−2
0.001
−6
−5
−4
−3
−2
−1
0
1
10
10
10
10
10
10
10
10
Rectangular Pulse Duration (s)
Figure 20. Transient Thermal Impedance of Diode
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7
FGHL50T65MQDT
PACKAGE DIMENSIONS
TO−247−3LD
CASE 340CX
ISSUE A
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8
FGHL50T65MQDT
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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