FGHL40T120SWD [ONSEMI]
1200V, 40A Field Stop VII (FS7) Discrete IGBT in TO247-3L Packaging;
| 型号： | FGHL40T120SWD |
| 厂家： | 
ONSEMI |
| 描述： | 1200V, 40A Field Stop VII (FS7) Discrete IGBT in TO247-3L Packaging 双极性晶体管 |
| 文件： | 总9页 (文件大小：289K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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IGBT – Power, Co-PAK
N-Channel, Field Stop VII
BV
V
I
C
CES
CE(SAT)
1200 V
1.7 V
40 A
(FS7), Non SCR, TO247-3L
1200 V, 1.7 V, 40 A
PIN CONNECTIONS
C
FGHL40T120SWD
Description
Using the novel field stop 7th generation IGBT technology and the
Gen7 Diode in TO247 3−lead package, FGHL40T120SWD offers the
optimum performance with low switching and conduction losses for high
efficiency operations in various applications like Solar, UPS and ESS.
G
E
Features
• Maximum Junction Temperature − T = 175°C
J
• Positive Temperature Coefficient for Easy Parallel Operation
• High Current Capability
G
• Smooth and Optimized Switching
• Low Switching Loss
C
E
TO−247−3LD
CASE 340CX
• RoHS Compliant
Applications
• Boost and Inverter in Solar Applications
• UPS
• Energy Storage System
MARKING DIAGRAM
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Parameter
Collector−to−Emitter Voltage
Gate−to−Emitter Voltage
Symbol
Value
1200
20
Unit
$Y&Z&3&K
FGHL40
T120SWD
V
CES
V
GES
V
Transient Gate−to−Emitter Voltage
30
Collector Current
Power Dissipation
T
= 25°C (Note 1)
I
70
A
W
A
C
C
T
= 100°C
= 25°C
40
C
$Y
&Z
&3
&K
= onsemi Logo
= Assembly Plant Code
= 3−Digit Date Code
T
P
469
234
160
C
D
T
C
= 100°C
= 2−Digit Lot Traceability Code
FGHL40T120SWD = Specific Device Code
Pulsed Collector
Current
T
T
= 25°C (Note 2)
I
CM
C
t = 10 ms
p
Diode Forward
Current
= 25°C (Note 1)
I
80
40
C
F
ORDERING INFORMATION
T
C
= 100°C
Device
Package
Shipping
Pulsed Diode Maximum
Forward Current
T
= 25°C,
I
160
C
p
FM
t = 10 ms
FGHL40T120SWD
TO−247
30 Units / Tube
(Pb−Free)
Operating Junction and Storage Temperature
Range
T , T
−55 to
+175
°C
J
stg
Lead Temperature for Soldering Purposes
T
L
260
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Value limit by bond wire
2. Repetitive rating: Pulse width limited by max. junction temperature
© Semiconductor Components Industries, LLC, 2023
1
Publication Order Number:
April, 2023 − Rev. 0
FGHL40T120SWD/D
FGHL40T120SWD
THERMAL CHARACTERISTICS
Parameter
Symbol
Value
0.32
0.57
40
Unit
Thermal Resistance, Junction−to−Case for IGBT
Thermal Resistance, Junction−to−Case for Diode
Thermal Resistance, Junction−to−Ambient
R
°C/W
q
JC
R
q
JCD
R
q
JA
ELECTRICAL CHARACTERISTICS OF IGBT (T = 25°C unless otherwise noted)
J
Parameter
OFF CHARACTERISTICS
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector−to−Emitter Breakdown Voltage
BV
V
V
= 0 V, I = 5 mA
1200
V
CES
GE
C
Collector−to−Emitter Breakdown Voltage
Temperature Coefficient
1226
mV/°C
DBVCES
DTJ
= 0 V, I = 5 mA
GE
C
Zero Gate Voltage Collector Current
Gate−to−Emitter Leakage Current
ON CHARACTERISTICS
I
V
= 0 V, V = V
CES
40
mA
CES
GES
GE
CE
I
V
= 20 V, V = 0 V
400
nA
GE
CE
Gate Threshold Voltage
V
V
= V , I = 40 mA
5.6
6.55
1.68
2.26
7.4
2.0
V
V
GE(th)
GE
CE C
Collector−to−Emitter Saturation Voltage
V
V
= 15 V, I = 40 A, T = 25°C
1.35
CE(sat)
GE
C
J
V
GE
= 15 V, I = 40 A, T = 175°C
C J
DYNAMIC CHARACTERISTICS
Input Capacitance
C
C
3384
139
pF
nC
ies
Output Capacitance
Reverse Transfer Capacitance
Gate Charge Total
V
CE
= 30 V, V = 0 V, f = 1 MHz
GE
oes
C
res
16.2
118
Q
g
V
= 600 V, V = 15 V,
GE
CE
Gate−to−Emitter Charge
Gate−to−Collector Charge
SWITCHING CHARACTERISTICS
Turn−on Delay Time
Turn−off Delay Time
Rise Time
Q
Q
28.8
45.4
ge
gc
I
= 40 A
C
t
22.4
160
14.4
78.4
1.1
ns
d(on)
t
d(off)
t
r
V
= 600 V, V = 0/15 V
GE
CE
Fall Time
t
f
I
= 20 A R = 4.7 W T = 25°C
C
G J
Turn−on Switching Loss
Turn−off Switching Loss
Total Switching Loss
Turn−on Delay Time
Turn−off Delay Time
Rise Time
E
on
E
off
mJ
ns
0.7
E
1.8
ts
t
24.0
118
35.2
67.4
2.4
d(on)
t
d(off)
t
r
V
= 600 V, V = 0/15 V
GE
CE
Fall Time
t
f
I
C
= 40 A R = 4.7 W T = 25°C
G J
Turn−on Switching Loss
Turn−off Switching Loss
Total Switching Loss
E
on
E
off
mJ
1.1
E
3.5
ts
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2
FGHL40T120SWD
ELECTRICAL CHARACTERISTICS OF IGBT (T = 25°C unless otherwise noted) (continued)
J
Parameter
SWITCHING CHARACTERISTICS
Turn−on Delay Time
Turn−off Delay Time
Rise Time
Symbol
Test Conditions
Min
Typ
Max
Unit
t
19.2
197
16.0
126
1.8
ns
d(on)
t
d(off)
t
r
V
= 600 V, V = 0/15 V
GE
CE
Fall Time
t
f
I
= 20 A R = 4.7 W T = 175°C
C
G J
Turn−on Switching Loss
Turn−off Switching Loss
Total Switching Loss
Turn−on Delay Time
Turn−off Delay Time
Rise Time
E
on
E
off
mJ
ns
1.1
E
ts
3.0
t
20.8
138
35.2
99.6
3.6
d(on)
t
d(off)
t
r
V
CE
= 600 V, V = 0/15 V
GE
Fall Time
t
f
I
C
= 40 A R = 4.7 W T = 175°C
G J
Turn−on Switching Loss
Turn−off Switching Loss
Total Switching Loss
DIODE CHARACTERISTICS
Forward Voltage
E
on
E
off
mJ
V
1.5
E
ts
5.2
V
F
I = 40 A, T = 25°C
1.62
1.87
1.84
2.22
F
J
I = 40 A, T = 175°C
F
J
DIODE SWITCHING CHARACTERISTICS, INDUCTIVE LOAD
Reverse Recovery Time
t
113
1433
0.4
ns
nC
mJ
A
rr
Reverse Recovery Charge
Reverse Recovery Energy
Peak Reverse Recovery Current
Reverse Recovery Time
Q
rr
V
= 600 V, I = 20 A,
F
R
dI /dt = 1000 A/ms, T = 25°C
F
J
E
REC
RRM
I
25.3
185
2512
0.7
t
rr
ns
nC
mJ
A
Reverse Recovery Charge
Reverse Recovery Energy
Peak Reverse Recovery Current
Reverse Recovery Time
Q
rr
V
R
= 600 V, I = 40 A,
F
dI /dt = 1000 A/ms, T = 25°C
F
J
E
REC
RRM
I
26.9
193
3258
1.0
t
rr
ns
nC
mJ
A
Reverse Recovery Charge
Reverse Recovery Energy
Peak Reverse Recovery Current
Reverse Recovery Time
Q
rr
V
R
= 600 V, I = 20 A,
F
dI /dt = 1000 A/ms, T = 175°C
F
J
E
REC
RRM
I
33.6
275
5211
1.7
t
rr
ns
nC
mJ
A
Reverse Recovery Charge
Reverse Recovery Energy
Peak Reverse Recovery Current
Q
rr
V
R
= 600 V, I = 40 A,
F
dI /dt = 1000 A/ms, T = 175°C
F
J
E
REC
RRM
I
37.9
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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3
FGHL40T120SWD
TYPICAL CHARACTERISTICS
160
140
120
100
80
160
T
T
J=−55°C
J=25°C
V
GE=8V
VGE=8V
140
120
100
80
VGE=10V
VGE=12V
VGE=10V
VGE=12V
V
GE=15V
VGE=15V
VGE=20V
VGE=20V
60
60
40
40
20
20
0
0
0
0
0
1
2
3
4
5
5
5
0
1
2
3
4
5
VCE, Collector to Emitter Voltage (V)
VCE, Collector to Emitter Voltage (V)
Figure 1. Output Characteristics
Figure 2. Output Characteristics
160
140
120
100
80
80
T
J=175°C
Common Emitter
VCE=20V
VGE=8V
=10V
VGE=12V
GE=15V
GE=20V
70
60
50
40
30
20
10
0
V
GE
V
V
60
40
20
T
J=25°C
T
J=175°C
0
1
2
3
4
0
2
4
6
8
10
12
VCE, Collector to Emitter Voltage (V)
VGE, Gate to Emitter Voltage (V)
Figure 3. Output Characteristics
Figure 4. Transfer Characteristics
160
140
120
100
80
3.5
Common Emitter
VGE=15V
Common Emitter
VGE=15V
3
2.5
2
T
T
J=25°C
J=175°C
1.5
1
60
40
=20A
IC
0.5
0
20
=40A
IC
=80A
IC
0
1
2
3
4
−100
−50
0
50
100
150
200
VCE, Collector to Emitter Voltage (V)
T
J, Collector−Emitter Junction Temperature (°C)
Figure 5. Saturation Characteristics
Figure 6. Saturation Voltage vs. Junction
Temperature
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4
FGHL40T120SWD
TYPICAL CHARACTERISTICS
10000
1000
100
Common Emitter
IC=40A
14
12
10
8
Common Emitter
VGE=0V
=25°C
TJ
f=1MHz
6
4
V
CC=200V
CC=400V
CC=600V
CIES
COES
CRES
2
V
V
10
0
0.1
1
10
0
20
40
60
80
100 120
140
VCE, Collector to Emitter Voltage (V)
QG, Gate Charge (nC)
Figure 7. Capacitance Characteristics
Figure 8. Gate Charge Characteristics
Common Emitter
VGE=15V
VCE=600V
IC=40A
100
10
1
100
*Note:
T
C=25°C,
T
J=175°C
Single Pulse
pulseDuration=10us
pulseDuration=100us
pulseDuration=1ms
pulseDuration=10ms
pulseDuration=DC
td(on)_T
J=25°C
td(on)_T
J=175°C
t _T
t _T
J=25°C
r
J=175°C
r
0.1
10
1
10
100
1000
0
5
10
15
20
R
G, Gate Resistance (W)
25
30
35
40
45
50
VCE, Collector to Emitter Voltage (V)
Figure 9. SOA Characteristics
Figure 10. Turn−On Switching Time vs. Gate
Resistance
Common Emitter
Common Emitter
VGE=15V
VCE=600V
IC=40A
VGE=15V
VCE=600V
IC=40A
1000
100
10
10
1
EON_T
J=25°C
td(off)_T
td(off)_T
J=25°C
t_T
EON_T
J=175°C
J=175°C
EOFF_T
J=25°C
J=25°C
f
EOFF_T
J=175°C
t_T
J=175°C
f
0.1
0
5
10
15
R
20
25
30
35
40
45
50
0
5
10
15
20
R
G, Gate Resistance (W)
25
30
35
40
45
50
G, Gate Resistance (W)
Figure 11. Turn−Off Switching Time vs. Gate
Figure 12. Switching Loss vs. Gate Resistance
Resistance
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5
FGHL40T120SWD
TYPICAL CHARACTERISTICS
1000
Common Emitter
Common Emitter
VGE=15V
VCE=600V
VGE=15V
VCE=600V
R
G=4.7W
R
G=4.7W
100
100
10
1
td(on)_T
td(on)_T
J=25°C
t _T
td(off)_T
td(off)_T
J=25°C
t_T
J=175°C
J=175°C
J=25°C
r
J=25°C
f
t _T
J=175°C
r
t_T
J=175°C
f
10
0
25
50
75
100
125
0
25
50
75
100
125
IC , Collector Current (A)
IC, Collector Current (A)
Figure 13. Turn−On Switching Time vs. Collector
Figure 14. Turn−Off Switching Time vs. Collector
Current
Current
160
VGE=0V
Common Emitter
VGE=15V
140
120
100
80
VCE=600V
R
G=4.7W
10
60
1
EON_T
EON_T
J=25°C
EOFF_T
40
J=175°C
T
J=175°C
J=25°C
20
T
J=25°C
EOFF_T
J=175°C
0.1
0
0
25
50
75
100
125
0
1
2
3
4
5
IC, Collector Current (A)
VF, Forward Voltage (V)
Figure 15. Switching Loss vs. Collector Current
Figure 16. Diode Forward Characteristics
60
50
40
30
20
500
=600V
VR=600V
IF=40A
VR
T
J=25°C
IF=40A
T
J=175°C
400
300
200
100
10
0
T
J=25°C
T
J=175°C
400
600
800
1000
1200
1400
1600
400
600
800
1000
1200
1400
1600
diF/dt, Diode Current Slope (A/us)
diF/dt, Diode Current Slope (A/us)
Figure 17. Diode Reverse Recovery Current
Figure 18. Diode Reverse Recovery Time
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FGHL40T120SWD
TYPICAL CHARACTERISTICS
7000
6000
5000
4000
3000
VR =600V
IF=40A
T
J=25°C
T
J=175°C
2000
1000
0
400
600
800
1000
1200
1400
1600
diF/dt, Diode Current Slope (A/us)
Figure 19. Diode Stored Charge Characteristics
1
0.1
D=0 is Single Pulse
D=0.00
D=0.01
D=0.02
D=0.05
D=0.10
D=0.20
D=0.50
0.01
0.001
Notes:
ZθJC
(t)=0.32°C/W Max
TJM=PDMxxZZ ()(+t)T+TC
P
DM
θJC
t
1
Duty Cycle,D=t/t/t2
1
t
2
1e−06
1e−05
1e−04
1e−03
1e−02
1e−01
1e+00
1e+01
t, Rectangular Pulse Duration (sec)
Figure 20. Transient Thermal Impedance of IGBT
1
0.1
D=0 is Single Pulse
0.01
0.001
D=0.00
D=0.01
D=0.02
D=0.05
D=0.10
D=0.20
D=0.50
Notes:
ZθJC
(t)=0.57°C/W Max
P
DM
TJM=PDMxxZZ (t)(+t)T+TC
θJC
t
1
Duty Cycle,D=t/t/t 2
1
t
2
1e−06
1e−05
1e−04
1e−03
1e−02
1e−01
1e+00
t, Rectangular Pulse Duration (sec)
Figure 21. Transient Thermal Impedance of Diode
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FGHL40T120SWD
PACKAGE DIMENSIONS
TO−247−3LD
CASE 340CX
ISSUE A
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8
FGHL40T120SWD
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