FGH80N60FDTU [ONSEMI]
IGBT，600V，场截止;
| 型号： | FGH80N60FDTU |
| 厂家： | 
ONSEMI |
| 描述： | IGBT，600V，场截止 局域网 栅 双极性晶体管 功率控制 |
| 文件： | 总9页 (文件大小：390K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IGBT - Field Stop
600 V, 80 A
FGH80N60FD
Description
Using Novel Field Stop IGBT Technology, ON Semiconductor’s
field stop IGBTs offer the optimum performance for induction
heating, telecom, ESS and PFC applications where low conduction
and switching losses are essential.
www.onsemi.com
Features
C
• High Current Capability
• Low Saturation Voltage: V
• High Input Impedance
• Fast Switching
= 1.8 V @ I = 40 A
C
CE(sat)
G
• This Device is Pb−Free and is RoHS Compliant
E
Applications
• Induction Heating, PFC, Telecom, ESS
E
C
G
COLLECTOR
(FLANGE)
TO−247−3LD
CASE 340CK
MARKING DIAGRAM
$Y&Z&3&K
FGH80N60
FD
$Y
= ON Semiconductor Logo
&Z
&3
&K
= Assembly Plant Code
= Numeric Date Code
= Lot Code
FGH80N60FD
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2007
1
Publication Order Number:
February, 2020 − Rev. 3
FGH80N60FD/D
FGH80N60FD
ABSOLUTE MAXIMUM RATINGS
Description
Symbol
Ratings
Unit
V
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
V
600
CES
GES
V
20
80
V
TC = 25°C
TC = 100°C
TC = 25°C
TC = 25°C
TC = 100°C
I
C
A
40
A
Pulsed Collector Current
I
(Note 1)
160
A
CM
Maximum Power Dissipation
P
D
290
W
W
°C
°C
°C
116
Operating Junction Temperature
Storage Temperature Range
T
J
−55 to +150
−55 to +150
300
T
stg
Maximum Lead Temperature for Soldering, 1/8″ from Case for 5 Seconds
T
L
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Repetitive rating: Pulse width limited by max. junction temperature.
THERMAL CHARACTERISTICS
Parameter
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
Symbol
Max.
0.43
1.5
Unit
°C/W
°C/W
°C/W
R
R
(IGBT)
ꢀ
JC
JC
(Diode)
ꢀ
R
40
ꢀ
JA
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
Top Mark
Package
Package Method
Reel Size
Tape Width
Quantity
FGH80N60FDTU
FGH80N60FD
TO−247
Tube
N/A
N/A
30
ELECTRICAL CHARACTERISTICS OF THE IGBT (T = 25°C unless otherwise noted)
C
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector to Emitter Breakdown Voltage
BV
V
V
= 0 V, I = 250 ꢁ A
600
−
−
−
V
CES
GE
C
Temperature Coefficient of Breakdown
Voltage
ꢂ
B
V
/ꢂ T
= 0 V, I = 250 ꢁ A
−
0.6
V/°C
CES
J
GE
C
Collector Cut−Off Current
G−E Leakage Current
I
V
V
= V
= V
, V = 0 V
−
−
−
−
250
400
ꢁ
A
CES
CE
CES
GE
I
, V = 0 V
nA
GES
GE
GES
CE
ON CHARACTERISTICs
G−E Threshold Voltage
V
I
C
I
C
I
C
= 250 ꢁ A, V = V
GE
4.5
−
5.5
1.8
7.0
2.4
−
V
V
V
GE(th)
CE
Collector to Emitter Saturation Voltage
V
= 40 A, V = 15 V
GE
CE(sat)
= 40 A, V = 15 V, T = 125°C
−
2.05
GE
C
DYNAMIC CHARACTERISTICS
Input Capacitance
C
V
CE
= 30 V, V = 0 V, f = 1 MHz
−
−
−
2110
200
60
−
−
−
pF
pF
pF
ies
GE
Output Capacitance
C
oes
Reverse Transfer Capacitance
C
res
www.onsemi.com
2
FGH80N60FD
ELECTRICAL CHARACTERISTICS OF THE IGBT (T = 25°C unless otherwise noted) (continued)
C
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
SWITCHING CHARACTERISTICS
Turn−On Delay Time
t
V
= 400 V, I = 40 A,
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
21
56
−
−
ns
ns
d(on)
CC
G
C
R
= 10 ꢃ ꢄ V = 15 V,
GE
Rise Time
t
r
Inductive Load, T = 25°C
C
Turn−Off Delay Time
Fall Time
t
126
50
−
ns
d(off)
t
f
100
1.5
0.78
2.28
−
ns
Turn−On Switching Loss
Turn−Off Switching Loss
Total Switching Loss
Turn−On Delay Time
Rise Time
E
on
E
off
1
mJ
mJ
mJ
ns
0.52
1.52
20
E
ts
t
t
V
= 400 V, I = 40 A,
= 10 ꢃ ꢄ V = 15 V,
GE
d(on)
CC C
R
G
t
r
54
−
ns
Inductive Load, T = 125°C
C
Turn−Off Delay Time
Fall Time
131
70
−
ns
d(off)
t
f
−
ns
Turn−On Switching Loss
Turn−Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate to Emitter Charge
Gate to Collector Charge
E
1.1
0.78
1.88
120
14
−
mJ
mJ
mJ
nC
nC
nC
on
off
E
−
E
ts
−
Q
V
CE
= 400 V, I = 40 A, V = 15 V
−
g
C
GE
Q
−
ge
gc
Q
58
−
ELECTRICAL CHARACTERISTICS OF THE DIODE (T = 25°C unless otherwise noted)
J
Parameter
Symbol
Test Conditions
Min
−
Typ
2.3
Max
2.8
−
Unit
Diode Forward Voltage
V
FM
I = 20 A
T
C
T
C
T
C
T
C
T
C
T
C
T
C
T
C
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
= 125°C
V
F
−
1.7
Diode Reverse Recovery Time
Diode Reverse Recovery Current
Diode Reverse Recovery Charge
t
I = 20 A, di /dt = 200 A/ꢁ s
−
36
−
ns
A
rr
rr
F
F
−
105
2.6
−
I
−
−
−
7.8
−
Q
−
46.8
409
−
nC
rr
−
−
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
www.onsemi.com
3
FGH80N60FD
TYPICAL PERFORMANCE CHARACTERISTICS
160
120
80
40
0
160
T
= 25°C
T
= 125°C
C
15 V
12 V
C
15 V
12 V
20 V
20 V
120
80
40
0
10 V
10 V
V
= 8 V
8
GE
V
GE
= 8 V
10
10
12
20
2
4
6
6
8
2
4
0
0
Collector−Emitter Voltage, V [V]
Collector−Emitter Voltage, V [V]
CE
CE
Figure 2. Typical Saturation Voltage
Characteristics
Figure 1. Typical Output Characteristics
160
160
120
80
40
0
Common Emitter
V
T
T
Common Emitter
V
= 15 V
GE
C
C
= 20 V
CE
= 25°C
T
C
T
C
= 25°C
= 125°C
120
80
40
0
= 125°C
6
2
3
4
5
0
1
2
4
6
8
10
Collector−Emitter Voltage, V [V]
CE
Gate−Emitter Voltage, V [V]
GE
Figure 3. Typical Saturation Voltage
Characteristics
Figure 4. Transfer Characteristics
3.5
3.0
2.5
2.0
1.5
1.0
20
16
12
8
Common Emitter
T
C
= 25°C
80 A
40 A
40 A
80 A
20 A
4
Common Emitter
V
= 15 V
GE
I
C
= 20 A
0
12
16
125
4
8
25
50
75
100
Gate−Emitter Voltage, V [V]
Case Temperature, T [°C]
GE
C
Figure 5. Saturation Voltage vs. Case
Temperature
Figure 6. Saturation Voltage vs. VGE
www.onsemi.com
4
FGH80N60FD
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
20
16
12
8
5000
Common Emitter
C
Common Emitter
T
= 125°C
V
T
= 0 V, f = 1 MHz
GE
C
= 125°C
4000
3000
2000
1000
0
C
iss
C
C
oss
rss
40 A
12
4
80 A
I
C
= 20 A
0
20
16
4
8
30
0.1
10
Collector−Emitter Voltage, V [V]
1
Gate−Emitter, V [V]
GE
CE
Figure 8. Capacitance Characteristics
Figure 7. Saturation Voltage vs. VGE
15
400
100
Common Emitter
C
10 ꢁ s
T
= 25°C
12
9
200 V
300 V
100 ꢁ s
V
CC
= 100 V
10
1
1 ms
10 ms
6
DC
Single Nonrepetitive
Pulse T = 25°C
C
0.1
0.01
3
Curves must be derated
linearly with increase
in temperature.
0
0
50
Gate Charge, Q [nC]
150
100
1000
1
100
10
Collector−Emitter Voltage, V [V]
g
CE
Figure 10. SOA Characteristics
Figure 9. Gate Charge Characteristics
200
200
100
100
10
1
t
r
Common Emitter
= 400 V, V = 15 V
t
d(on)
V
CC
GE
I
= 40 A
10
5
C
Safe Operating Area
T
C
T
C
= 25°C
V
= 20 V, T = 100°C
= 125°C
GE
C
10
1000
1
100
50
0
10
20
30
40
Collector−Emitter Voltage, V [V]
Gate Resistance, R [ꢃ]
CE
G
Figure 11. Turn−Off Switching SOA
Figure 12. Turn−On Characteristics vs. Gate
Characteristics
Resistance
www.onsemi.com
5
FGH80N60FD
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
200
2000
1000
Common Emitter
Common Emitter
V
= 15 V, R = 10 ꢃ
V
= 400 V, V = 15 V
GE
G
CC
GE
T
T
= 25°C
= 125°C
I
= 40 A
C
C
C
100
t
r
T
C
T
C
= 25°C
= 125°C
t
d(off)
100
10
t
f
t
d(on)
10
20
40
60
80
0
10
20
30
40
50
80
80
Collector Current, I [A]
Gate Resistance, R [ꢃ]
C
G
Figure 14. Turn−On Characteristics
Figure 13. Turn−Off Characteristics
vs. Collector Current
vs. Gate Resistance
5
500
Common Emitter
Common Emitter
V
= 15 V, R = 10 ꢃ
V
C
= 400 V, V = 15 V
GE
G
CC GE
T
C
T
C
= 25°C
= 125°C
I = 40 A
T
C
T
C
= 25°C
= 125°C
E
t
on
d(off)
100
E
off
1
t
f
20
20
0.3
60
Collector Current, I [A]
10
20
30
40
50
40
0
Gate Resistance, R [ꢃ]
G
C
Figure 16. Switching Loss vs. Gate
Resistance
Figure 15. Turn−Off Characteristics
vs. Collector Current
10
Common Emitter
V
GE
= 15 V, R = 10 ꢃ
G
T
C
T
C
= 25°C
= 125°C
E
on
E
off
1
0.1
40
60
20
Collector Current, I [A]
C
Figure 17. Switching Loss vs. Collector
Current
www.onsemi.com
6
FGH80N60FD
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
1
0.5
0.1
0.2
0.1
0.05
0.02
0.01
P
0.01
DM
t
Single Pulse
1
t
2
Duty Factor, D = t1/t2
Peak T = Pdm x Zꢀ jc + T
j
C
1E−3
1
1E−4
1E−3
0.01
0.1
1E−5
Rectangular Pulse Duration [sec]
Figure 18. Transient Thermal Impedance of IGBT
600
500
400
100
10
T
C
= 125°C
125°C
T
C
= 75°C
T
C
= 25°C
300
200
100
0
1
25°C
0.1
300
400
100
200
0
1
3
2
4
di/dt, [A/ꢁ s]
Forward Voltage, V [V]
F
Figure 20. Stored Charge
Figure 19. Forward Characteristics
20
140
120
100
80
15
10
5
125°C
125°C
25°C
60
25°C
40
0
20
400
100
300
200
400
300
100
200
di/dt, [A/s]
di/dt, [A/s]
Figure 22. Reverse Recovery Current
Figure 21. Reverse Recovery Time
www.onsemi.com
7
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−3LD SHORT LEAD
CASE 340CK
ISSUE A
DATE 31 JAN 2019
P1
D2
A
E
P
A
A2
Q
E2
S
D1
D
E1
B
2
2
1
3
L1
A1
b4
L
c
(3X) b
(2X) b2
M
M
B A
0.25
MILLIMETERS
MIN NOM MAX
4.58 4.70 4.82
2.20 2.40 2.60
1.40 1.50 1.60
1.17 1.26 1.35
1.53 1.65 1.77
2.42 2.54 2.66
0.51 0.61 0.71
20.32 20.57 20.82
(2X) e
DIM
A
A1
A2
b
b2
b4
c
GENERIC
D
MARKING DIAGRAM*
D1 13.08
~
~
D2
E
0.51 0.93 1.35
15.37 15.62 15.87
AYWWZZ
XXXXXXX
XXXXXXX
E1 12.81
~
~
E2
e
L
4.96 5.08 5.20
5.56
15.75 16.00 16.25
3.69 3.81 3.93
3.51 3.58 3.65
XXXX = Specific Device Code
~
~
A
Y
= Assembly Location
= Year
WW = Work Week
ZZ = Assembly Lot Code
L1
P
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
P1 6.60 6.80 7.00
Q
S
5.34 5.46 5.58
5.34 5.46 5.58
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13851G
TO−247−3LD SHORT LEAD
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2018
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
ADDITIONAL INFORMATION
TECHNICAL PUBLICATIONS:
Technical Library: www.onsemi.com/design/resources/technical−documentation
onsemi Website: www.onsemi.com
ONLINE SUPPORT: www.onsemi.com/support
For additional information, please contact your local Sales Representative at
www.onsemi.com/support/sales
相关型号：
FGHL50T65MQDTL4
IGBT - 650 V 50 A FS4 medium switching speed IGBT with full rated copack diode
ONSEMI
©2020 ICPDF网 联系我们和版权申明