FGH80N60FD2TU [ONSEMI]
IGBT，600V，场截止;
| 型号： | FGH80N60FD2TU |
| 厂家： | 
ONSEMI |
| 描述： | IGBT，600V，场截止 双极性晶体管 |
| 文件： | 总9页 (文件大小：406K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IGBT - Field Stop
600 V, 40 A
FGH80N60FD2
Description
Using novel field stop IGBT technology, ON Semiconductor’s field
stop IGBTs offer the optimum performance for induction heating and
PFC applications where low conduction and switching losses are
essential.
www.onsemi.com
V
I
C
CES
Features
600 V
40 A
• High Current Capability
• Low Saturation Voltage: V
• High Input Impedance
• Fast Switching
= 1.8 V (Typ.) @ I = 40 A
C
C
E
CE(sat)
• This Device is Pb−Free and is RoHS Compliant
G
Applications
• Induction Heating, PFC
E
C
G
COLLECTOR
(FLANGE)
TO−247−3LD
CASE 340CK
MARKING DIAGRAM
$Y&Z&3&K
FGH80N60
FD2
$Y
= ON Semiconductor Logo
&Z
&3
&K
= Assembly Plant Code
= Numeric Date Code
= Lot Code
FGH80N60FD2
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2008
1
Publication Order Number:
February, 2020 − Rev. 3
FGH80N60FD2/D
FGH80N60FD2
ABSOLUTE MAXIMUM RATINGS
Symbol
Description
Ratings
Unit
V
V
Collector to Emitter Voltage
Gate−Emitter Voltage
Collector Current
600
CES
GES
V
20
80
V
I
C
T
C
T
C
T
C
T
C
T
C
= 25°C
= 100°C
= 25°C
= 25°C
A
40
A
I
(Note 1)
Pulsed Collector Current
160
A
CM
P
D
Maximum Power Dissipation
290
W
W
°C
°C
°C
= 100°C
116
T
Operating Junction Temperature
Storage Temperature Range
−55 to +150
−55 to +150
300
J
T
STG
T
L
Maximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 Seconds
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Repetitive rating: Pulse width limited by max. junction temperature.
THERMAL CHARACTERISTICS
Symbol
(IGBT)
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Typ.
−
Max.
0.43
1.45
40
Unit
R
R
_C/W
_C/W
_C/W
q
JC
(Diode)
−
q
JA
R
−
q
JA
PACKAGE MARKING AND ORDERING INFORMATION
Packing
Method
Part Number
Top Mark
Package
Reel Size
Tape Width
Quantity
FGH80N60FD2TU
FGH80N60FD2
TO−247
Tube
N/A
N/A
30
ELECTRICAL CHARACTERISTICS OF THE IGBT (T = 25°C unless otherwise noted)
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
OFF CHARACTERISTICS
BV
Collector−Emitter Breakdown Voltage
V
V
= 0 V, I = 250 mA
600
−
−
−
V
V/°C
mA
CES
GE
C
DBV
/ DT Temperature Coefficient of Breakdown Voltage
= 0 V, I = 250 mA
−
0.6
CES
J
GE
C
I
Collector Cut−Off Current
G−E Leakage Current
V
CE
V
GE
= V
= V
, V = 0 V
−
−
−
−
250
400
CES
CES
GE
I
, V = 0 V
nA
GES
GES
CE
ON CHARACTERISTICS
V
G−E Threshold Voltage
I
I
I
= 250 mA, V = V
GE
4.5
5.5
1.8
7.0
2.4
V
V
GE(th)
C
C
C
CE
V
Collector to Emitter Saturation Voltage
= 40 A, V = 15 V,
−
CE(sat)
GE
= 40 A, V = 15 V,
GE
−
2.05
−
V
T
= 125°C
C
DYNAMIC CHARACTERISTICS
V
= 30 V, V = 0 V,
C
Input Capacitance
−
−
−
2110
200
60
−
−
−
pF
pF
pF
CE
GE
ies
f = 1 MHz
C
Output Capacitance
oes
C
Reverse Transfer Capacitance
res
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2
FGH80N60FD2
ELECTRICAL CHARACTERISTICS OF THE IGBT (T = 25°C unless otherwise noted) (continued)
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
SWITCHING CHARACTERISTICS
V
= 400 V, I = 40 A,
C
T
Turn−On Delay Time
CC
G
−
−
−
−
−
−
−
21
56
−
−
ns
ns
d(on)
R
= 10 W, V = 15 V,
GE
T
r
Rise Time
Inductive Load, T = 25°C
C
T
Turn−Off Delay Time
Fall Time
126
50
−
ns
d(off)
T
f
100
1.5
0.78
2.28
ns
E
Turn−On Switching Loss
Turn−Off Switching Loss
Total Switching Loss
1
mJ
mJ
mJ
on
off
E
0.52
1.52
E
ts
V
= 400 V, I = 40 A,
C
T
Turn−On Delay Time
Rise Time
CC
G
−
−
−
−
−
−
−
20
54
−
−
−
−
−
−
−
ns
ns
d(on)
R
= 10 W, V = 15 V,
GE
T
r
Inductive Load, T = 125°C
C
T
Turn−Off Delay Time
Fall Time
131
70
ns
d(off)
T
f
ns
E
Turn−On Switching Loss
Turn−Off Switching Loss
Total Switching Loss
1.1
0.78
1.88
mJ
mJ
mJ
on
off
E
E
ts
V
CE
V
GE
= 400 V, I = 40 A,
Q
Total Gate Charge
−
−
−
120
14
−
−
−
nC
nC
nC
C
g
= 15 V
Q
ge
Q
gc
Gate−Emitter Charge
Gate−Collector Charge
58
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
ELECTRICAL CHARACTERISTICS OF THE DIODE (T = 25°C unless otherwise noted)
C
Symbol
Parameter
Test Conditions
Min
−
Typ
1.2
1.0
61
Max
1.5
−
Unit
I = 15 A
T
C
= 25°C
V
V
FM
Diode Forward Voltage
F
T
= 125°C
= 25°C
−
C
C
C
C
I = 15 A,
T
ns
A
T
rr
Diode Reverse Recovery Time
Diode Reverse Recovery Current
Diode Reverse Recovery Charge
−
−
F
C
di /dt = 200 A/ms
F
T
= 125°C
= 25°C
−
125
4.8
8.4
146
525
−
T
I
rr
−
−
C
T
= 125°C
= 25°C
−
−
T
nC
Q
−
−
C
rr
T
= 125°C
−
−
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
www.onsemi.com
3
FGH80N60FD2
TYPICAL PERFORMANCE CHARACTERISTICS
160
120
80
40
0
160
TC = 25oC
20V
TC = 125oC
15V
15V
20V
12V
12V
120
10V
10V
80
40
VGE = 8V
VGE = 8V
0
0
2
4
6
8
10
0
2
4
6
8
10
Collector−Emitter Voltage, V (V)
Collector−Emitter Voltage, V (V)
CE
CE
Figure 1. Typical Output Characteristics
Figure 2. Typical Saturation Voltage
Characteristics
160
120
80
40
0
160
Common Emitter
VCE = 20V
TC = 25oC
TC = 125oC
Common Emitter
VGE = 15V
TC = 25oC
TC = 125oC
120
80
40
0
2
4
6
8
10
12
0
1
2
3
4
5
6
Collector−Emitter Voltage, V (V)
Gate−Emitter Voltage,V (V)
CE
GE
Figure 3. Typical Saturation
Voltage Characteristics
Figure 4. Transfer Characteristics
3.5
3.0
2.5
2.0
1.5
1.0
20
16
12
8
Common Emitter
TC = 25oC
80A
40A
20A
40A
4
80A
Common Emitter
VGE = 15V
IC = 20A
0
4
8
12
16
GE
20
25
50
75
100
125
Gate−Emitter Voltage, V (V)
Case Temperature, T (5C)
C
Figure 5. Saturation Voltage vs. Case
Temperature at Variant Current Level
Figure 6. Saturation Voltage vs. VGE
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4
FGH80N60FD2
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
20
16
12
8
5000
Common Emitter
Common Emitter
VGE = 0V, f = 1MHz
TC = 25oC
TC = 125oC
4000
3000
2000
1000
0
Ciss
Coss
40A
12
4
80A
Crss
IC = 20A
0
4
8
16
20
0.1
1
10
30
Gate−Emitter Voltage, V (V)
Collector−Emitter Voltage, V (V)
GE
GE
Figure 8. Capacitance Characteristics
Figure 7. Saturation Voltage vs. VGE
15
12
9
400
100
Common Emitter
TC = 25oC
ms
10
ms
100
200V
Vcc = 100V
300V
10
1
1ms
10 ms
DC
6
Single Nonrepetitive
Pulse T =255C
C
0.1
0.01
3
Curves must be derated
linearly with increase
in temperature
0
0
50
100
150
1
10
100
1000
Gate Charge, Q (nC)
Collector−Emitter Voltage, V (V)
g
CE
Figure 9. Gate Charge Characteristics
Figure 10. SOA Characteristics
200
200
100
100
10
1
tr
Common Emitter
VCC = 400V, VGE = 15V
td(on)
IC = 40A
TC = 25oC
TC = 125oC
10
5
Safe Operating Area
VGE = 20V, TC = 100oC
1
10
100
1000
0
10
20
30
40
50
Collector−Emitter Voltage, V (V)
Gate Resistance, R (W)
CE
G
Figure 11. Turn−Off Switching SOA
Figure 12. Turn−On Characteristics vs.
Characteristics
Gate Resistance
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5
FGH80N60FD2
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
2000
1000
200
Common Emitter
VCC = 400V, VGE = 15V
IC = 40A
TC = 25oC
TC = 125oC
Common Emitter
VGE = 15V, RG = 10 W
TC = 25oC
TC = 125oC
tr
100
td(off)
100
10
tf
td(on)
10
0
10
20
30
40
50
20
40
60
80
Collector Current, I (A)
Gate Resistance, R (W)
C
G
Figure 13. Turn−Off Characteristics vs.
Figure 14. Turn−On Characteristics vs.
Gate Resistance
Collector Current
5
500
Common Emitter
Common Emitter
VGE = 15V, RG = 10 W
TC = 25oC
VCC = 400V, VGE = 15V
IC = 40A
TC = 25oC
TC = 125oC
TC = 125oC
td(off)
Eon
100
Eoff
1
tf
20
20
0.3
40
60
80
0
10
20
30
40
50
Gate Resistance, R (W)
Collector Current, I (A)
G
C
Figure 15. Turn−Off Characteristics vs.
Figure 16. Switching Loss vs.
Gate Resistance
Collector Current
10
Common Emitter
VGE = 15V, RG = 10W
TC = 25oC
Eon
TC = 125oC
Eoff
1
0.1
20
40
60
80
Collector Current, I (A)
C
Figure 17. Switching Loss vs. Collector Current
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6
FGH80N60FD2
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
1
0.1
0.5
0.2
0.1
0.05
0.02
0.01
PDM
0.01
t1
single pulse
t2
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
1E−3
1E−5
1E−4
1E−3
0.01
0.1
1
Rectangular Pulse Duration (sec)
Figure 19. Transient Thermal Impedance of IGBT
1000
800
600
400
200
0
10
1
TC = 125oC
125oC
TC = 25oC
25oC
0.1
100
200
di/dt, (A/ms)
300
400
0
1
2
3
Forward Voltage, V (V)
F
Figure 18. Forward Characteristics
Figure 20. Stored Charge
160
20
140
120
100
80
15
10
5
125oC
125oC
60
25oC
25oC
40
20
100
0
100
200
di/dt, (A/ms)
300
400
200
di/dt, (A/ms)
300
400
Figure 21. Reverse Recovery Time
Figure 22. Reverse Recovery Current
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7
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−3LD SHORT LEAD
CASE 340CK
ISSUE A
DATE 31 JAN 2019
P1
D2
A
E
P
A
A2
Q
E2
S
D1
D
E1
B
2
2
1
3
L1
A1
b4
L
c
(3X) b
(2X) b2
M
M
B A
0.25
MILLIMETERS
MIN NOM MAX
4.58 4.70 4.82
2.20 2.40 2.60
1.40 1.50 1.60
1.17 1.26 1.35
1.53 1.65 1.77
2.42 2.54 2.66
0.51 0.61 0.71
20.32 20.57 20.82
(2X) e
DIM
A
A1
A2
b
b2
b4
c
GENERIC
D
MARKING DIAGRAM*
D1 13.08
~
~
D2
E
0.51 0.93 1.35
15.37 15.62 15.87
AYWWZZ
XXXXXXX
XXXXXXX
E1 12.81
~
~
E2
e
L
4.96 5.08 5.20
5.56
15.75 16.00 16.25
3.69 3.81 3.93
3.51 3.58 3.65
XXXX = Specific Device Code
~
~
A
Y
= Assembly Location
= Year
WW = Work Week
ZZ = Assembly Lot Code
L1
P
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
P1 6.60 6.80 7.00
Q
S
5.34 5.46 5.58
5.34 5.46 5.58
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13851G
TO−247−3LD SHORT LEAD
PAGE 1 OF 1
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