FGH75T65UPD-F085 [ONSEMI]
650 V、75 A、1.69 V、TO-247场截止 IGBT;
| 型号： | FGH75T65UPD-F085 |
| 厂家： | 
ONSEMI |
| 描述： | 650 V、75 A、1.69 V、TO-247场截止 IGBT 双极性晶体管 |
| 文件： | 总10页 (文件大小：395K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IGBT - Field Stop, Trench
650 V, 75 A
FGH75T65UPD-F085
Description
Using Novel Field Stop Trench IGBT Technology,
ON Semiconductor’s new series of Field Stop Trench IGBTs offer
the optimum performance for Automotive chargers, Solar Inverter,
UPS and Digital Power Generator where low conduction and
switching losses are essential.
www.onsemi.com
C
Features
• Maximum Junction Temperature : T = 175°C
J
• Positive Temperature Co−efficient for Easy Parallel Operating
• High Current Capability
G
• Low Saturation Voltage: V
• High Input Impedance
= 1.65 V (Typ.) @ I = 75 A
C
CE(sat)
E
• Tightened Parameter Distribution
• AEC−Q101Qualified and PPAP Capable
E
C
• This Device is Pb−Free and is RoHS Compliant
G
Applications
• Automotive Chargers, Converters, High Voltage Auxiliaries
• Solar Inverters, UPS, Digital Power Generator
COLLECTOR
(FLANGE)
TO−247−3LD
CASE 340CK
MARKING DIAGRAM
$Y&Z&3&K
FGH75T65
UPD
$Y
= ON Semiconductor Logo
&Z
&3
&K
= Assembly Plant Code
= Numeric Date Code
= Lot Code
FGH75T65UPD
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2013
1
Publication Order Number:
FGH75T65UPD−F085/D
February, 2020 − Rev. 4
FGH75T65UPD−F085
ABSOLUTE MAXIMUM RATINGS
Description
Symbol
Ratings
Unit
V
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
V
CES
GES
650
V
20
V
TC = 25°C
I
C
150
A
TC = 100°C
75
A
Pulsed Collector Current
Diode Forward Current
I
(Note 1)
225
A
CM
TC = 25°C
I
F
75
A
TC = 100°C
50
225
A
Pulsed Diode Maximum Forward Current
Maximum Power Dissipation
I
(Note 1)
A
FM
TC = 25°C
TC = 100°C
TC = 25°C
P
375
W
W
ꢀ s
°C
°C
°C
D
187
Short Circuit Withstand Time
Operating Junction Temperature
Storage Temperature Range
SCWT
5
T
−55 to +175
−55 to +175
300
J
T
stg
Maximum Lead Temperature for Soldering, 1/8″ from Case for 5 Seconds
T
L
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Repetitive rating: Pulse width limited by max. junction temperature.
THERMAL CHARACTERISTICS
Parameter
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Case
Parameter
Symbol
Ratings
0.4
Unit
°C/W
°C/W
R
(IGBT) (Note 2)
ꢁ
JC
R
(Diode)
0.86
Typ
ꢁ
JC
Symbol
Thermal Resistance, Junction−to−Ambient (PCB Mount) (Note 2)
R
40
°C/W
ꢁ
JA
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
Top Mark
Package
Package Method
Reel Size
Tape Width
Quantity
FGH75T65UPD−F085
FGH75T65UPD
TO−247
Tube
−
−
30
ELECTRICAL CHARACTERISTICS OF THE IGBT (T = 25°C unless otherwise noted)
C
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector to Emitter Breakdown Voltage
BV
V
V
= 0 V, I = 1 mA
650
−
−
−
V
CES
GE
C
Temperature Coefficient of Breakdown
Voltage
ꢂ BV
ꢂ T
/
= 0 V, I = 1 mA
−
0.65
V/°C
CES
J
GE
C
Collector Cut−Off Current
I
V
= V
, V = 0 V
−
−
−
−
−
−
250
3600
400
ꢀ
A
CES
CE
CES
GE
I
at 80% * B
, 175°C
CES
VCES
G−E Leakage Current
I
V
GE
= V
, V = 0 V
CE
nA
GES
GES
ON CHARACTERISTICs
G−E Threshold Voltage
V
I
C
I
C
I
C
= 75 mA, V = V
GE
4.0
−
6.0
7.5
2.3
−
V
V
V
GE(th)
CE
Collector to Emitter Saturation Voltage
V
= 75 A, V = 15 V
1.69
2.21
CE(sat)
GE
= 75 A, V = 15 V, T = 175°C
−
GE
C
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2
FGH75T65UPD−F085
ELECTRICAL CHARACTERISTICS OF THE IGBT (T = 25°C unless otherwise noted) (continued)
C
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
DYNAMIC CHARACTERISTICS
Input Capacitance
C
V
CE
= 30 V, V = 0 V, f = 1 MHz
−
−
−
5665
205
−
−
−
pF
pF
pF
ies
GE
Output Capacitance
C
oes
Reverse Transfer Capacitance
C
100
res
SWITCHING CHARACTERISTICS
Turn−On Delay Time
t
V
= 400 V, I = 75 A,
−
−
−
−
−
−
−
−
−
−
−
−
−
−
5
−
−
−
32
43
48
71
216
33
4.80
1.60
5.30
−
ns
ns
d(on)
CC
G
C
R
= 3 ꢃ ꢄ V = 15 V,
GE
Rise Time
t
r
Inductive Load, T = 25°C
C
Turn−Off Delay Time
Fall Time
t
166
24
ns
d(off)
t
f
ns
Turn−On Switching Loss
Turn−Off Switching Loss
Total Switching Loss
Turn−On Delay Time
Rise Time
E
on
E
off
2.85
1.20
4.05
30
mJ
mJ
mJ
ns
E
ts
t
t
V
= 400 V, I = 75 A,
= 3 ꢃ ꢄ V = 15 V,
GE
d(on)
CC C
R
G
t
r
57
−
ns
Inductive Load, T = 175°C
C
Turn−Off Delay Time
Fall Time
176
21
−
ns
d(off)
t
f
−
ns
Turn−On Switching Loss
Turn−Off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
Total Gate Charge
Gate to Emitter Charge
Gate to Collector Charge
E
on
E
off
4.45
1.60
6.05
−
−
mJ
mJ
mJ
ꢀ s
−
E
ts
−
Tsc
V
V
= 15 V, V ≤ 400V, R = 10 ꢃ
−
GE
CC
G
Q
= 400 V, I = 75 A, V = 15 V
385
45
578
68
315
nC
nC
nC
g
CE
C
GE
Q
ge
gc
Q
210
ELECTRICAL CHARACTERISTICS OF THE DIODE (T = 25°C unless otherwise noted)
J
Parametr
Symbol
Test Conditions
Min
−
Typ
2.1
1.7
40
Max
2.6
−
Unit
Diode Forward Voltage
V
FM
I = 50 A
T
C
T
C
T
C
T
C
T
C
T
C
T
C
= 25°C
V
F
= 175°C
= 175°C
= 25°C
−
Reverse Recovery Energy
E
rec
I = 50 A, dI /dt = 200 A/ꢀ s
−
−
ꢀ J
F
F
Diode Reverse Recovery Time
t
rr
−
43
85
−
ns
= 175°C
= 25°C
−
162
83
Diode Reverse Recovery Charge
Q
−
170
−
nC
rr
= 175°C
−
805
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Rꢁ jc for TO−247 : according to Mil standard 883−1012 test method. Rꢁ ja for TO−247 : according to JESD51−2, test method environmental
condition and JESD51−10, test boards for through hole perimeter leaded package thermal measurements. JESD51−3 : Low Effective
Thermal Conductivity Test Board for Leaded Surface Mount Package.
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3
FGH75T65UPD−F085
TYPICAL PERFORMANCE CHARACTERISTICS
225
225
180
135
90
V
GE
= 20 V
V
GE
= 20 V
15V
12 V
15 V
180
12 V
10 V
135
90
10 V
45
45
0
8 V
T
C
= 25°C
T
C
= 175°C
8 V
0
0
2
4
6
8
10
4
6
8
10
0
2
Collector−Emitter Voltage, V [V]
Collector−Emitter Voltage, V {V]
CE
CE
Figure 1. Typical Output Characteristics
Figure 2. Typical Output Characteristics
225
225
Common Emitter
200
175
150
125
100
75
V
T
= 400 V
CE
= 25°C
180
135
90
C
C
T
= 175°C
Common Emitter
50
V
= 15 V
GE
45
0
T
T
= 25°C
C
C
25
0
= 175°C
1
6
0
2
3
4
5
3
9
12
15
0
Gate−Emitter Voltage, V [V]
GE
Collector−Emitter Voltage, V [V]
CE
Figure 4. Transfer Characteristics
Figure 3. Typical Saturation Voltage
Characteristics
4
20
16
12
8
Common Emitter
GE
Common Emitter
V
= 15 V
T
C
= −40°C
150 A
3
2
1
150 A
75 A
= 40 A
8
75 A
I
C
4
I
= 40 A
C
0
25
175
50
75
100 125
150
20
16
12
4
Gate−Emitter Voltage, V [V]
Collector−Emitter Case Temperature, T [°C]
GE
C
Figure 6. Saturation Voltage vs. VGE
Figure 5. Saturation Voltage vs. Case Temperature
at Variant Current Level
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4
FGH75T65UPD−F085
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
20
16
12
8
20
Common Emitter
= 175°C
Common Emitter
C
T
C
T
= 25°C
16
12
8
150 A
150 A
75 A
75 A
4
4
I
C
= 40 A
8
I
C
= 40 A
8
0
0
20
20
4
16
12
12
4
16
Gate−Emitter Voltage, V [V]
Gate−Emitter Voltage, V [V]
GE
GE
Figure 8. Saturation Voltage vs. VGE
Figure 7. Saturation Voltage vs. VGE
10000
1000
15
12
9
C
ies
400 V
200 V
V
CC
= 300 V
C
oes
6
Common Emitter
3
C
res
V
= 0 V, f = 1 MHz
Common Emitter
= 25°C
100
50
GE
T
= 25°C
T
C
C
0
30
10
Collector−Emitter Voltage, V [V]
1
0
210
280
350 420
70
140
Gate Charge, Q [nC]
g
CE
Figure 10. Gate Charge Characteristics
Figure 9. Capacitance Characteristics
1000
500
100
Common Emitter
= 400 V, V = 15 V
10 ꢀ s
V
CC
GE
I
= 75 A
C
T
C
T
C
= 25°C
100 ꢀ s
t
= 175°C
d(on)
10
1 ms
100
t
r
10 ms
DC
1
*Notes:
1. T = 25°C
C
2. T ≤ 175°C
J
3. Single Pulse
10
0.1
50
0
40
10
20
30
1
10
100
500
Gate Resistance, R [ꢃ]
G
Collector−Emitter Voltage, V [V]
CE
Figure 12. Turn−on Characteristics
Figure 11. SOA Characteristics
vs. Gate Resistance
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5
FGH75T65UPD−F085
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
500
5000
1000
t
d(off)
100
t
r
t
f
t
d(on)
10
1
100
10
Common Emitter
= 400 V, V = 15 V
Common Emitter
V
CC
GE
V
= 15 V, R = 3 ꢃ
GE
G
I
= 75 A
C
T
T
= 25°C
C
C
T
C
T
C
= 25°C
= 175°C
= 175°C
0
30
60
90
120
150
0
40
50
10
20
30
Gate Resistance, R [ꢃ]
Collector Current, I [A]
G
C
Figure 14. Turn−on Characteristics
Figure 13. Turn−off Characteristics
vs. Collector Current
vs. Gate Resistance
100
10
1
1000
100
Common Emitter
V
I
= 400 V, V = 15 V
CC
GE
t
= 75 A
d(off)
C
T
C
T
C
= 25°C
= 175°C
E
on
t
f
E
off
10
1
Common Emitter
V
T
T
= 15 V, R = 3 ꢃ
GE
G
= 25°C
= 175°C
C
C
40
50
0
150
0
10
20
30
30
60
90
120
Collector Current, I [A]
Gate Resistance, R [ꢃ]
G
C
Figure 16. Switching Loss vs. Gate
Resistance
Figure 15. Turn−off Characteristics
vs. Collector Current
50
10
250
200
150
100
50
E
on
1
Common Emitter
E
off
V
= 15 V, R = 3 ꢃ
GE
G
T
T
= 25°C
= 175°C
C
C
Safe Operating Area
V
GE
= 15 V, T ≤ 175°C
C
0.1
0
30
60
90
120
150
0
100 200 300 400 500 600 700
Collector−Emitter Voltage, V [V]
Collector Current, I [A]
C
CE
Figure 17. Switching Loss vs. Collector
Current
Figure 18. Turn−off Switching SOA
Characteristics
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6
FGH75T65UPD−F085
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
180
180
150
120
90
T
= 100°C
C
V
= 400 V
CC
Load Current:
150
120
90
60
30
0
Peak of square wave
60
Duty Cycle: 50%
= 100°C
30
T
C
Power Dissipation = 187 W
0
1M
10k
100k
1k
0
25 50 75 100 125 150 175 200
Switching Frequency, f [Hz]
Case Temperature, T [°C]
C
Figure 20. Load Current vs. Frequence
Figure 19. Current Derating
300
100
15
12
9
T
C
T
C
= 25°C
= 175°C
di/dt = 200 A/ꢀ s
100 A/ꢀ s
T
C
= 175°C
10
6
T
C
= 125°C
di/dt = 200 A/ꢀ s
T
= 75°C
C
3
0
100 A/ꢀ s
T
1
= 25°C
C
1
4
2
3
0
80
20
40
IC [A]
60
0
Forward Voltage, V [V]
F
Figure 21. Forward Characteristics
Figure 22. Reverse Recovery Time
1.0
0.8
0.6
0.4
250
T
C
T
C
= 25°C
T
C
T
C
= 25°C
200 A/ꢀ s
200 A/ꢀ s
= 175°C
= 175°C
200
150
di/dt = 100 A/ꢀ s
di/dt = 100 A/ꢀ s
100
50
0
200 A/ꢀ s
200 A/ꢀ s
0.2
0.0
di/dt = 100 A/ꢀ s
di/dt = 100 A/ꢀ s
0
80
40
60
80
20
40
60
0
20
Forward Current, I [A]
Forward Current, I [A]
F
F
Figure 24. Reverse Recovery Time
Figure 23. Stored Charge
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7
FGH75T65UPD−F085
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
0.5
0.5
0.1
0.2
0.1
0.05
0.02
0.01
P
DM
0.01
t
1
Single Pulse
t
2
Duty Factor, D = t1/t2
Peak T = Pdm x Zꢁ jc + T
J
C
1E−3
1E−5
1E−4
0.01
0.1
1E−3
Rectangular Pulse Duration [sec]
Figure 25. Transient Thermal Impedance of IGBT
1
0.5
0.1 0.2
0.1
0.05
0.02
0.01
P
DM
0.01
t
1
Single Pulse
t
2
Duty Factor, D = t1/t2
Peak T = Pdm x Zꢁ jc + T
j
C
1E−3
1
1E−5
1E−4
1E−3
Rectangular Pulse Duration [sec]
0.1
0.01
Figure 26. Transient Thermal Impedance of Diode
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8
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−3LD SHORT LEAD
CASE 340CK
ISSUE A
DATE 31 JAN 2019
P1
D2
A
E
P
A
A2
Q
E2
S
D1
D
E1
B
2
2
1
3
L1
A1
b4
L
c
(3X) b
(2X) b2
M
M
B A
0.25
MILLIMETERS
MIN NOM MAX
4.58 4.70 4.82
2.20 2.40 2.60
1.40 1.50 1.60
1.17 1.26 1.35
1.53 1.65 1.77
2.42 2.54 2.66
0.51 0.61 0.71
20.32 20.57 20.82
(2X) e
DIM
A
A1
A2
b
b2
b4
c
GENERIC
D
MARKING DIAGRAM*
D1 13.08
~
~
D2
E
0.51 0.93 1.35
15.37 15.62 15.87
AYWWZZ
XXXXXXX
XXXXXXX
E1 12.81
~
~
E2
e
L
4.96 5.08 5.20
5.56
15.75 16.00 16.25
3.69 3.81 3.93
3.51 3.58 3.65
XXXX = Specific Device Code
~
~
A
Y
= Assembly Location
= Year
WW = Work Week
ZZ = Assembly Lot Code
L1
P
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
P1 6.60 6.80 7.00
Q
S
5.34 5.46 5.58
5.34 5.46 5.58
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13851G
TO−247−3LD SHORT LEAD
PAGE 1 OF 1
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
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