FGH75T65UPD-F155 [ONSEMI]
650V, 75A，场截止沟道IGBT;
| 型号： | FGH75T65UPD-F155 |
| 厂家： | 
ONSEMI |
| 描述： | 650V, 75A，场截止沟道IGBT 双极性晶体管 |
| 文件： | 总10页 (文件大小：600K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IGBT - Field Stop, Trench
650 V, 75 A
FGH75T65UPD,
FGH75T65UPD-F155
Description
www.onsemi.com
Using innovative field stop trench IGBT technology,
ON Semiconductor’s new series of field−stop trench IGBTs offer
optimum performance for solar inverter, UPS, welder, and digital
power genera−tor where low conduction and switching losses are
essential.
C
Features
G
• Maximum Junction Temperature: T = 175°C
J
• Positive Temperature Co−efficient for Easy Parallel Operating
• High Current Capability
E
E
• Low Saturation Voltage: V
= 1.65 V(Typ.) @ I = 75 A
C
CE(sat)
C
G
• 100% of Parts Tested I
LM
• High Input Impedance
• Tightened Parameter Distribution
• Short Circuit Ruggedness > 5 ꢀ s @ 25°C
TO−247−3LD
CASE 340CK
TO−247−3LD
CASE 340CH
• These Devices are Pb−Free and are RoHS Compliant
FGH75T65UPD
FGH75T65UPD−F155
Applications
• Solar Inverter, UPS, Digital Power Generator
MARKING DIAGRAMS
$Y&Z&3&K
FGH75T65
UPD
$Y
= ON Semiconductor Logo
&Z
&3
&K
= Assembly Plant Code
= Numeric Date Code
= Lot Code
FGH75T65UPD
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
1
Publication Order Number:
April, 2020 − Rev. 3
FGH75T65UPD/D
FGH75T65UPD, FGH75T65UPD−F155
ABSOLUTE MAXIMUM RATINGS
Description
Symbol
Ratings
Unit
V
Collector to Emitter Voltage
Gate to Emitter Voltage
V
CES
V
GES
650
20
V
Transient Gate to Emitter Voltage
Collector Current
25
V
T
T
= 25°C
I
C
150
A
C
Collector Current
= 100°C
75
A
C
Pulsed Collector Current (Note 1)
Clamped Inductive Load Current (Note 2)
Diode Forward Current
I
225
A
CM
T
C
T
C
T
C
= 25°C
= 25°C
= 100°C
I
225
A
LM
I
F
75
A
Diode Forward Current
50
225
A
Pulsed Diode Maximum Forward Current (Note 1)
I
A
FM
Maximum Power Dissipation
Maximum Power Dissipation
Short Circuit Withstand Time
Operating Junction Temperature
Storage Temperature Range
T
= 25°C
= 100°C
= 25°C
P
375
W
W
ꢀ s
°C
°C
°C
C
C
C
D
T
T
187
SCWT
5
T
−55 to +175
−55 to +175
300
J
T
stg
Maximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 Seconds
T
L
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Repetitive rating: Pulse width limited by max. junction temperature.
2. Ic = 225 A, Vce = 400 V, Rg = 10 ꢁ
THERMAL CHARACTERISTICS
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Symbol
(IGBT)
Typ
−
Max
0.40
0.86
40
Unit
°C/W
°C/W
°C/W
R
R
ꢂ
JC
(Diode)
−
ꢂ
JC
R
−
ꢂ
JA
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
FGH75T65UPD
Top Mark
Package
TO−247−3
TO−247−3
Packing Method
Tube
Reel Size
N/A
Tape Width
Quantity
FGH75T65UPD
FGH75T65UPD
N/A
N/A
30
30
FGH75T65UPD−F155
Tube
N/A
ELECTRICAL CHARACTERISTICS OF THE IGBT (T = 25°C unless otherwise noted)
C
Parameter
Off Characteristics
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector to Emitter Breakdown Voltage
BV
V
V
= 0 V, I = 1 mA
650
−
−
V
CES
GE
C
Temperature Coefficient of Breakdown
Voltage
ꢃ
B
V
/ꢃ T
= 0 V, I = 250 ꢀ A
0.65
V/°C
CES
J
GE
C
Collector Cut−Off Current
G−E Leakage Current
I
V
V
= V
= V
, V = 0 V
−
−
−
−
250
400
ꢀ
A
CES
CE
CES
GE
I
, V = 0 V
nA
GES
GE
GES
CE
On Characteristics
G−E Threshold Voltage
V
I
C
I
C
I
C
= 75 mA, V = V
GE
4.0
−
6.0
7.5
2.3
−
V
V
V
GE(th)
CE
Collector to Emitter Saturation Voltage
V
= 75 A, V = 15 V
1.65
2.05
CE(sat)
GE
= 75 A, V = 15 V, T = 175°C
−
GE
C
www.onsemi.com
2
FGH75T65UPD, FGH75T65UPD−F155
ELECTRICAL CHARACTERISTICS OF THE IGBT (T = 25°C unless otherwise noted) (continued)
C
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Dynamic Characteristics
Input Capacitance
C
V
CE
= 30 V, V = 0 V, f = 1 MHz
−
−
−
5665
205
−
−
−
pF
pF
pF
ies
GE
Output Capacitance
C
oes
Reverse Transfer Capacitance
C
100
res
Switching Characteristics
Turn−On Delay Time
t
V
= 400 V, I = 75 A,
−
−
−
−
−
−
−
−
−
−
−
−
−
−
5
−
−
−
32
43
42
56
216
33
3.68
1.60
5.3
−
ns
ns
d(on)
CC
G
C
R
= 3 ꢁ ꢄ V = 15 V,
GE
Rise Time
t
r
Inductive Load, T = 25°C
C
Turn−Off Delay Time
Fall Time
t
166
24
ns
d(off)
t
f
ns
Turn−On Switching Loss
Turn−Off Switching Loss
Total Switching Loss
Turn−On Delay Time
Rise Time
E
on
E
off
2.85
1.20
4.05
30
mJ
mJ
mJ
ns
E
ts
t
t
V
= 400 V, I = 75 A,
= 3 ꢁ ꢄ V = 15 V,
GE
d(on)
CC C
R
G
t
r
57
−
ns
Inductive Load, T = 175°C
C
Turn−Off Delay Time
Fall Time
176
21
−
ns
d(off)
t
f
−
ns
Turn−On Switching Loss
Turn−Off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
Total Gate Charge
Gate to Emitter Charge
Gate to Collector Charge
E
on
E
off
4.45
1.60
6.05
−
−
mJ
mJ
mJ
ꢀ s
−
E
ts
−
Tsc
V
V
= 15 V, V ≤ 400 V, Rg = 10 ꢁ
−
GE
CC
Q
= 400 V, I = 75 A, V = 15 V
385
45
578
68
315
nC
nC
nC
g
CE
C
GE
Q
ge
gc
Q
210
ELECTRICAL CHARACTERISTICS OF THE DIODE (T = 25°C unless otherwise noted)
C
Parameter
Diode Forward Voltage
Symbol
Test Conditions
Min
−
Typ
2.1
1.7
40
Max
2.6
−
Unit
V
FM
I = 50 A
T
C
T
C
T
C
T
C
T
C
T
C
T
C
= 25°C
V
F
= 175°C
= 175°C
= 25°C
−
Reverse Recovery Energy
E
rec
I = 50 A,
−
−
ꢀ
J
F
di /dt = 200 A/ꢀ s
F
Diode Reverse Recovery Time
t
rr
−
65
85
−
ns
= 175°C
= 25°C
−
127
120
550
Diode Reverse Recovery Charge
Q
−
170
−
nC
rr
= 175°C
−
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
www.onsemi.com
3
FGH75T65UPD, FGH75T65UPD−F155
TYPICAL PERFORMANCE CHARACTERISTICS
225
225
180
135
V
= 20 V
V
GE
= 20 V
GE
15 V
15 V
12 V
180
135
90
12 V
10 V
90
45
10 V
45
0
8 V
8 V
T
C
= 175°C
T
C
= 25°C
0
0
2
4
6
8
10
0
2
4
6
8
10
V
CE
, Collector−Emitter Voltage (V)
V
CE
, Collector−Emitter Voltage (V)
Figure 2. Typical Output Characteristics
Figure 1. Typical Output Characteristics
225
3.5
Common Emitter
= 15 V
200
175
150
125
100
75
V
GE
3.0
2.5
2.0
150 A
75 A
Common Emitter
50
V
= 15 V
GE
1.5
1.0
T
T
= 25°C
C
C
25
I
C
= 40 A
= 175°C
0
0
1
2
3
4
5
25
50
75
100
125 150
175
V
CE
, Collector−Emitter Voltage (V)
T , Case Temperature (°C)
C
Figure 3. Typical Saturation Voltage
Characteristics
Figure 4. Saturation Voltage vs. Case Temperature
at Variant Current Level
20
16
12
8
20
Common Emitter
C
Common Emitter
C
T
= 25°C
T
= 175°C
16
12
8
150 A
150 A
75 A
75 A
4
4
I
C
= 40 A
I
C
= 40 A
0
0
4
20
12
16
20
8
12
16
8
4
V
GE
, Gate−Emitter Voltage (V)
V
GE
, Gate−Emitter Voltage (V)
Figure 6. Saturation Voltage vs. VGE
Figure 5. Saturation Voltage vs. VGE
www.onsemi.com
4
FGH75T65UPD, FGH75T65UPD−F155
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
10000
1000
15
C
ies
12
9
400 V
200 V
V
CC
= 300 V
C
oes
6
Common Emitter
= 0 V, f = 1 MHz
C
3
C
res
V
Common Emitter
T = 25°C
C
100
50
GE
T
= 25°C
0
1
30
10
, Collector−Emitter Voltage (V)
0
70
140
210
280
350 420
V
CE
Q , Gate Charge (nC)
g
Figure 8. Gate Charge Characteristics
Figure 7. Capacitance Characteristics
1000
5000
1000
Common Emitter
V
I
= 400 V, V = 15 V
CC
GE
= 75 A
t
C
d(off)
T
C
T
C
= 25°C
= 175°C
t
d(on)
100
t
f
100
10
t
r
Common Emitter
= 400 V, V = 15 V
V
CC
GE
I
= 75 A
C
T
C
T
C
= 25°C
= 175°C
10
50
50
0
10
20
30
40
0
10
20
30
40
R , Gate Resistance (ꢁ)
G
R , Gate Resistance (ꢁ)
G
Figure 10. Turn−Off Characteristics
Figure 9. Turn−On Characteristics
vs. Gate Resistance
vs. Gate Resistance
500
100
100
Common Emitter
V
= 400 V, V = 15 V
CC
GE
I
= 75 A
C
T
C
T
C
= 25°C
t
r
= 175°C
E
on
t
10
d(on)
10
1
E
off
Common Emitter
V
= 15 V, R = 3 ꢁ
GE
G
T
T
= 25°C
C
C
= 175°C
1
150
0
30
60
90
120
10
20
30
40
50
0
R , Gate Resistance (ꢁ)
G
I , Collector Current (A)
C
Figure 11. Switching Loss vs. Gate Resistance
Figure 12. Turn−On Characteristics
vs. Collector Current
www.onsemi.com
5
FGH75T65UPD, FGH75T65UPD−F155
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
1000
100
10
50
t
d(off)
10
1
E
on
t
f
Common Emitter
Common Emitter
1
V
= 15 V, R = 3 ꢁ
GE
G
V
= 15 V, R = 3 ꢁ
E
off
GE
G
T
T
= 25°C
= 175°C
C
C
T
T
= 25°C
= 175°C
C
C
0.1
0.1
90
120
150
0
30
60
0
30
60
90
120
150
I , Collector Current (A)
C
I , Collector Current (A)
C
Figure 13. Turn−Off Characteristics
Figure 14. Switching Loss vs. Collector
Current
vs. Collector Current
180
150
500
IcMAX (Pulsed)
T
= 100°C
C
10 ꢀ s
100
10
1
100 ꢀ s
10 ms
IcMAX
(Continuous)
120
1 ms
90
60
DC Operation
Duty Cycle: 50%
= 100°C
Single Nonrepetitive
T
C
Pulse T = 25°C
Power Dissipation = 187 W
C
Curves must be derated
linearly with increase
in temperature.
30
0
V
= 400 V
CC
Load Current: Peak of Square Wave
0.1
1k
10k
100k
1M
1
10
100
1000
f, Switching Frequency (Hz)
V
CE
, Collector−Emitter Voltage (V)
Figure 16. SOA Characteristics
Figure 15. Load Current vs. Frequency
11
10
300
100
T
C
T
C
= 25°C
= 175°C
T
C
= 175°C
di /dt = 200 A/ꢀ s
8
6
4
F
100 A/ꢀ s
10
1
T
= 125°C
C
di /dt = 200 A/ꢀ s
F
T
C
= 75°C
2
0
100 A/ꢀ s
T
C
= 25°C
0
1
2
3
4
0
10 20 30 40 50 60 70 80
V , Forward Voltage (V)
F
I , Forward Current (A)
F
Figure 18. Reverse Recovery Current
Figure 17. Forward Characteristics
www.onsemi.com
6
FGH75T65UPD, FGH75T65UPD−F155
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
200
160
120
80
0.7
T
C
T
C
= 25°C
T
C
T
C
= 25°C
= 175°C
= 175°C
0.6
0.5
0.4
0.3
0.2
0.1
0.0
200 A/ꢀ s
di /dt = 100 A/ꢀ s
F
200 A/ꢀ s
di /dt = 100 A/ꢀ s
F
di /dt = 100 A/ꢀ s
F
200 A/ꢀ s
200 A/ꢀ s
di /dt = 100 A/ꢀ s
F
40
80
0
80
40
60
20
40
60
0
20
I , Forward Current (A)
F
I , Forward Current (A)
F
Figure 20. Stored Charge
Figure 19. Reverse Recovery Time
0.5
0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
P
DM
Single Pulse
t
1
t
2
Duty Factor, D = t1/t2
Peak T = Pdm x Z + T
C
ꢂ
j
jc
1E−3
1E−5
1E−4
1E−3
0.01
0.1
Rectangular Pulse Duration (sec)
Figure 21. Transient Thermal Impedance of IGBT
2
1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
P
DM
Single Pulse
0.01
t
1
t
2
Duty Factor, D = t1/t2
Peak T = Pdm x Z + T
ꢂ
j
jc
C
1E−3
0.1
1E−5
1E−4
1E−3
0.01
1
Rectangular Pulse Duration (sec)
Figure 22. Transient Thermal Impedance of Diode
www.onsemi.com
7
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−3LD
CASE 340CH
ISSUE A
DATE 09 OCT 2019
GENERIC
MARKING DIAGRAM*
XXXXXXXXX
AYWWG
XXXX = Specific Device Code
A
Y
= Assembly Location
= Year
WW = Work Week
G
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13853G
TO−247−3LD
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2018
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−3LD SHORT LEAD
CASE 340CK
ISSUE A
DATE 31 JAN 2019
P1
D2
A
E
P
A
A2
Q
E2
S
D1
D
E1
B
2
2
1
3
L1
A1
b4
L
c
(3X) b
(2X) b2
M
M
B A
0.25
MILLIMETERS
MIN NOM MAX
4.58 4.70 4.82
2.20 2.40 2.60
1.40 1.50 1.60
1.17 1.26 1.35
1.53 1.65 1.77
2.42 2.54 2.66
0.51 0.61 0.71
20.32 20.57 20.82
(2X) e
DIM
A
A1
A2
b
b2
b4
c
GENERIC
D
MARKING DIAGRAM*
D1 13.08
~
~
D2
E
0.51 0.93 1.35
15.37 15.62 15.87
AYWWZZ
XXXXXXX
XXXXXXX
E1 12.81
~
~
E2
e
L
4.96 5.08 5.20
5.56
15.75 16.00 16.25
3.69 3.81 3.93
3.51 3.58 3.65
XXXX = Specific Device Code
~
~
A
Y
= Assembly Location
= Year
WW = Work Week
ZZ = Assembly Lot Code
L1
P
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
P1 6.60 6.80 7.00
Q
S
5.34 5.46 5.58
5.34 5.46 5.58
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13851G
TO−247−3LD SHORT LEAD
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2018
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
ADDITIONAL INFORMATION
TECHNICAL PUBLICATIONS:
Technical Library: www.onsemi.com/design/resources/technical−documentation
onsemi Website: www.onsemi.com
ONLINE SUPPORT: www.onsemi.com/support
For additional information, please contact your local Sales Representative at
www.onsemi.com/support/sales
相关型号：
©2020 ICPDF网 联系我们和版权申明