FDD8445-F085P [ONSEMI]
40 V、70 A、6.7 mΩ、DPAKN 沟道 PowerTrench®;
| 型号： | FDD8445-F085P |
| 厂家： | 
ONSEMI |
| 描述： | 40 V、70 A、6.7 mΩ、DPAKN 沟道 PowerTrench® 开关 晶体管 |
| 文件： | 总7页 (文件大小：805K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
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or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
FDD8445-F085
®
N-Channel PowerTrench MOSFET
40V, 50A, 6.7mΩ
Features
Typ RDS(on) = 6.7m at VGS = 10V, ID = 50A
Typ Qg(10) = 45nC at VGS = 10V, ID = 50A
Low Miller Charge
D
Low Qrr Body Diode
UIS Capability (Single Pulse/ Repetitive Pulse)
RoHS Compliant
D
G
Qualified to AEC Q101
G
Applications
Automotive Engine Control
S
D-PAK
(TO-252)
S
Powertrain Management
Solenoid and Motor Drivers
Electronic Transmission
Distributed Power Architecture and VRMs
Primary Switch for 12V Systems
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDSS
Parameter
Ratings
40
Units
Drain to Source Voltage
Gate to Source Voltage
V
V
VGS
±20
Drain Current Continuous (VGS = 10V)
Pulsed
50
ID
A
Figure 4
144
EAS
PD
Single Pulse Avalanche Energy
(Note 1)
mJ
W
W/oC
oC
oC/W
oC/W
Power Dissipation
Derate above 25oC
79
0.53
TJ, TSTG Operating and Storage Temperature
-55 to +175
1.9
RJC
RJA
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient, 1in2 copper pad area
52
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FDD8445
FDD8445-F085
TO-252AA
13”
12mm
2500 units
Notes:
1: Starting T = 25°C, L = 0.18mH, I = 40A
J
AS
2: A suffix as “…F085P” has been temporarily introduced in order to manage a double source strategy as ON Semiconductor has officially
announced in Aug 2014.
©2016 Semiconductor Components Industries, LLC.
September-2017, Rev. 2
Publication Order Number:
FDD8445-F085/D
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
IDSS
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ID = 250A, VGS = 0V
40
-
-
-
-
-
-
1
V
V
DS = 32V,
A
nA
VGS = 0V
TA = 150oC
-
250
±100
IGSS
VGS = ±20V
-
On Characteristics
VGS(th)
rDS(on)
Gate to Source Threshold Voltage
Drain to Source On Resistance
VGS = VDS, ID = 250A
D = 50A, VGS= 10V
2
-
2.8
6.7
4
V
I
8.7
m
ID = 50A, VGS= 10V
TJ = 175oC
-
12.5
16.3
Dynamic Characteristics
Ciss
Input Capacitance
-
-
-
-
-
3040
295
178
1.7
4050
390
270
-
pF
pF
pF
VDS = 25V, VGS = 0V,
f = 1MHz
Coss
Crss
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
RG
f = 1MHz
Qg(TOT)
Qg(TH)
Qgs
Total Gate Charge at 10V
Threshold Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller“ Charge
VGS = 0 to 10V
45
59
7.6
-
nC
nC
nC
nC
VGS = 0 to 2V
5.8
V
DD = 20V
ID = 50A
-
-
12.5
10.5
Qgd
-
Switching Characteristics
ton
td(on)
tr
Turn-On Time
Turn-On Delay Time
Rise Time
-
-
-
-
-
-
-
138
ns
ns
ns
ns
ns
ns
10
82
26
9.6
-
-
-
V
V
DD = 20V, ID = 50A
GS = 10V, RGS = 2
td(off)
tf
Turn-Off Delay Time
Fall Time
-
-
toff
Turn-Off Time
53
Drain-Source Diode Characteristics
I
SD = 50A
-
-
-
-
-
-
-
-
1.25
1.0
39
VSD
Source to Drain Diode Voltage
V
ISD = 25A
trr
Reverse Recovery Time
ns
ISD = 50A, dISD/dt = 100A/s
Qrr
Reverse Recovery Charge
38
nC
www.onsemi.com
2
Typical Characteristics
Figure 2. Maximum Continuous Drain Current vs
Case Temperature
Figure 1. Normalized Power Dissipation vs Case
Temperature
Figure 3. Normalized Maximum Transient Thermal Impedance
Figure 4. Peak Current Capability
www.onsemi.com
3
Typical Characteristics
Figure 5. Forward Bias Safe Operating Area
Figure 6. Unclamped Inductive Switching
Capability
Figure 8. Saturation Characteristics
Figure 7. Transfer Characteristics
Figure 9. Drain to Source On-Resistance
Variation vs Gate to Source Voltage
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
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4
Typical Characteristics
Figure 11. Normalized Gate Threshold Voltage vs
Junction Temperature
Figure 12. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
Figure 13. Capacitance vs Drain to Source
Voltage
Figure 14. Gate Charge vs Gate to Source Voltage
www.onsemi.com
5
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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❖
相关型号：
FDD8447L_F085
Power Field-Effect Transistor, 50A I(D), 40V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, DPAK-3
FAIRCHILD
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