FDD8447L-F085 [FAIRCHILD]
N-Channel PowerTrench® MOSFET 40V, 50A, 11.0mΩ; N沟道MOSFET PowerTrench® 40V ， 50A ， 11.0MI ©
| 型号： | FDD8447L-F085 |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | N-Channel PowerTrench® MOSFET 40V, 50A, 11.0mΩ |
| 文件： | 总7页 (文件大小：440K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
February 2009
FDD8447L_F085
N-Channel PowerTrench® MOSFET
40V, 50A, 11.0mΩ
Applications
Features
Typ rDS(on) = 7.0mΩ at VGS = 10V, ID = 14A
Inverter
Typ rDS(on) = 8.5mΩ at VGS = 4.5V, ID = 11A
Power Supplies
Fast Switching
Automotive Engine Control
Power Train Management
Solenoid and Motor Drivers
Electronic Transmission
Qualified to AEC Q101
RoHS Compliant
Primary Switch for 12V and 24V Systems
D
D
G
S
G
D-PAK
(TO-252)
S
©2009 Fairchild Semiconductor Corporation
FDD8447L_F085 Rev. A1
1
www.fairchildsemi.com
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
Parameter
Ratings
Units
Drain to Source Voltage
Gate to Source Voltage
(Note 1)
40
V
V
VGS
±20
Drain Current Continuous (TC < 80oC, VGS = 10V)
50
See Figure 4
40
ID
A
Pulsed
EAS
PD
Single Pulse Avalanche Energy
Power Dissipation
Dreate above 25oC
(Note 2)
mJ
W
W/oC
oC
65
0.43
TJ, TSTG Operating and Storage Temperature
-55 to + 175
Thermal Characteristics
RθJC
RθJA
Maximum Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area
2.3
40
oC/W
oC/W
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
2500 units
FDD8447L
FDD8447L_F085 D-PAK(TO-252)
13’’
12mm
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
IDSS
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ID = 250µA, VGS = 0V
VDS = 32V, VGS = 0V
VGS = ±20V, VGS = 0V
40
-
-
-
-
-
1
V
µA
nA
IGSS
-
±100
On Characteristics
VGS(th)
rDS(on)
gFS
Gate to Source Threshold Voltage
VGS = VDS, ID = 250µA
1.0
1.9
7.0
8.5
10.4
58
3.0
8.5
11.0
14.0
-
V
mΩ
S
I
D = 14A, VGS = 10V
-
-
-
-
Drain to Source On Resistance
Forward Transconductance
ID = 11A, VGS = 4.5V
ID = 14A, VGS = 10V, TJ = 125°C
ID = 14A, VDS = 5V
Dynamic Characteristics
Ciss
Input Capacitance
-
-
-
-
-
-
-
-
1970
250
150
1.27
37
-
-
pF
pF
pF
Ω
VDS = 20V, VGS = 0V,
f = 1MHz
Coss
Crss
Rg
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
-
f = 1MHz
-
Qg(TOT)
Qg(5)
Qgs
Total Gate Charge at 10V
Total Gate Charge at 5V
Gate to Source Gate Charge
Gate to Drain “Miller“ Charge
VGS = 0 to 10V
52
28
-
nC
nC
nC
nC
VDD = 20V
VGS = 0 to 5V
20
I
D = 14A
GS = 10V
6
V
Qgd
7
-
FDD8447L_F085 Rev. A1
2
www.fairchildsemi.com
Electrical Characteristics TC = 25oC unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
-
-
-
-
12
12
38
9
21
21
61
18
ns
ns
ns
ns
VDD = 20 V, ID = 1 A,
V
GS = 10 V, RGEN = 6 Ω
Turn-Off Delay Time
Fall Time
Drain-Source Diode Characteristics
VSD
trr
Source to Drain Diode Voltage
Reverse Recovery Time
ISD = 14A
-
-
-
0.8
22
11
1.2
29
14
V
ns
nC
IF = 14A, dISD/dt = 100A/µs
Qrr
Reverse Recovery Charge
Notes:
o
o
1: Starting T = 25 C to 175 C.
2: Starting T = 25 C, L = 0.05mH, I = 40A
J
o
J
AS
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For
a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
FDD8447L_F085 Rev. A1
3
www.fairchildsemi.com
Typical Characteristics
1.2
1.0
0.8
0.6
0.4
0.2
0.0
70
60
50
40
30
20
10
0
CURRENT LIMITED
BY PACKAGE
VGS = 10V
0
25
50
75
100
125
150
175
25
50
75
100
125
150
175
TC, CASE TEMPERATURE
(
oC
)
TC, CASE TEMPERATURE(oC)
Figure 2. Maximum Continuous Drain Current vs
Case Temperature
Figure 1. Normalized Power Dissipation vs Case
Temperature
2
DUTY CYCLE - DESCENDING ORDER
1
D = 0.50
0.20
0.10
0.05
P
DM
0.1
0.02
0.01
t
1
t
2
0.01
NOTES:
DUTY FACTOR: D = t /t
1
2
PEAK T = P
x Z
x R
+ T
J
DM
θJA
θJA C
SINGLE PULSE
0.001
10-5
10-4
10-3
10-2
10-1
1
10
t, RECTANGULAR PULSE DURATION(s)
Figure 3. Normalized Maximum Transient Thermal Impedance
1000
100
10
TC = 25oC
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
VGS = 10V
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
CURRENT AS FOLLOWS:
175 - TC
I = I2
150
SINGLE PULSE
10-5
10-4
10-3
10-2
10-1
1
10
t, RECTANGULAR PULSE DURATION(s)
Figure 4. Peak Current Capability
FDD8447L_F085 Rev. A1
4
www.fairchildsemi.com
Typical Characteristics
400
100
1000
If R = 0
= (L)(I )/(1.3*RATED BV
t
AV
- V
)
AS
DSS
DD
If R
AV
≠ 0
t
= (L/R)ln[(I *R)/(1.3*RATED BV
- V ) +1]
AS
DSS DD
100
10
100us
1ms
STARTING TJ = 25oC
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(on)
10
1
1
STARTING TJ = 150oC
SINGLE PULSE
T
J
= MAX RATED
10ms
DC
o
T
C
= 25
C
0.1
0.001
0.01
0.1
1
10
100
1
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
100
tAV, TIME IN AVALANCHE (ms)
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching
Capability
Figure 5. Forward Bias Safe Operating Area
100
100
VGS = 10V
VGS = 6V
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
VGS = 5V
µs
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
80
60
40
20
0
80
60
40
20
0
VDD = 5V
VGS = 4.5V
VGS = 4V
VGS = 3.5V
TJ = 175oC
TJ = -55oC
VGS = 3V
TJ = 25oC
0.0
0.5
1.0
1.5
2.0
2.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
VDS, DRAIN TO SOURCE VOLTAGE (V)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 7. Transfer Characteristics
Figure 8. Saturation Characteristics
40
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
µs
ID = 14A
PULSE DURATION = 80
µs
DUTY CYCLE = 0.5% MAX
30
20
10
0
TJ = 175oC
ID = 14A
TJ = 25oC
6
VGS = 10V
2
4
8
10
-80
-40
0
40
80
120
160
200
TJ, JUNCTION TEMPERATURE
(
oC
)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 9. Drain to Source On-Resistance
Variation vs Gate to Source Voltage
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
FDD8447L_F085 Rev. A1
5
www.fairchildsemi.com
Typical Characteristics
1.4
1.2
1.0
0.8
0.6
0.4
1.15
1.10
1.05
1.00
0.95
0.90
VGS
= VDS
ID = 1mA
I
D
= 250µA
-80
-40
0
40
80
120
oC
160
200
-80
-40
0
40
80
120
160
oC
200
TJ, JUNCTION TEMPERATURE
(
)
TJ, JUNCTION TEMPERATURE
(
)
Figure 11. Normalized Gate Threshold Voltage vs
Junction Temperature
Figure 12. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
10
4000
ID = 14A
Ciss
8
6
4
2
0
VDD = 10V
VDD = 20V
VDD = 30V
1000
Coss
f = 1MHz
VGS = 0V
Crss
100
0.1
1
10
80
0
8
16
24
32
40
VDS, DRAIN TO SOURCE VOLTAGE
(V)
Qg, GATE CHARGE(nC)
Figure 13. Capacitance vs Drain to Source
Voltage
Figure 14. Gate Charge vs Gate to Source Voltage
FDD8447L_F085 Rev. A1
6
www.fairchildsemi.com
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
®
Build it Now™
CorePLUS™
FRFET
Programmable Active Droop™
QFET
QS™
Quiet Series™
RapidConfigure™
SM
®
Global Power Resource
Green FPS™
CorePOWER™
CROSSVOLT™
CTL™
TinyBoost™
TinyBuck™
Green FPS™ e-Series™
GTO™
®
TinyLogic
Current Transfer Logic™
EcoSPARK
EfficentMax™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MillerDrive™
MotionMax™
Motion-SPM™
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
TriFault Detect™
µSerDes™
®
™
Saving our world, 1mW /W /kW at a time™
SmartMax™
EZSWITCH™ *
™
SMART START™
®
SPM
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS™
SyncFET™
®
®
®
Fairchild
®
®
®
Fairchild Semiconductor
FACT Quiet Series™
UHC
OPTOLOGIC
®
Ultra FRFET™
UniFET™
VCX™
VisualMax™
XS™
OPTOPLANAR
®
®
FACT
®
FAST
tm
FastvCore™
PDP SPM™
Power-SPM™
PowerTrench
PowerXS™
®
FlashWriter
FPS™
*
®
®
The Power Franchise
F-PFS™
®
* EZSWITCH™ and FlashWriter are trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website,
www.fairchildsemi.com, under Sales Support.
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their
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application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the
proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild
Distributors who are listed by country on our web page cited above. Products customers buy either from fairchild directly or from Authorized Fairchild
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up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and
warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is
committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Advance Information
Formative / In Design
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
Preliminary
First Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
No Identification Needed
Obsolete
Full Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Not In Production
Rev. I38
FDD8447L_F085 Rev. A1
7
www.fairchildsemi.com
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