FDD8451_08 [FAIRCHILD]
N-Channel PowerTrench㈢ MOSFET; N沟道MOSFET的PowerTrench
| 型号： | FDD8451_08 |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | N-Channel PowerTrench㈢ MOSFET |
| 文件： | 总6页 (文件大小：412K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
March 2008
FDD8451
tm
N-Channel PowerTrench® MOSFET
40V, 28A, 24mΩ
Features
General Description
Max rDS(on) =24mΩ at VGS = 10V, ID = 9A
This N-Channel MOSFET has been designed specifically
to improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, fast
Max rDS(on) =30mΩ at VGS = 4.5V, ID = 7A
Low gate charge
switching speed and extremely low rDS(on)
.
Fast Switching
Application
High performance trench technology for extremely low
rDS(on)
DC/DC converter
Backlight inverter
RoHS compliant
D
G
S
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDS
VGS
Parameter
Ratings
Units
Drain to Source Voltage
Gate to Source Voltage
40
V
V
±20
Drain Current -Continuous @TC=25°C
-Continuous @TA=25°C
-Pulsed
28
ID
9
78
A
(Note 1)
(Note 2)
EAS
Single Pulse Avalanche Energy
Power Dissipation
20
mJ
W
PD
37
TJ, TSTG
Operating and Storage Temperature
-55 to 150
°C
Thermal Characteristics
RθJC
RθJA
RθJA
Thermal Resistance, Junction to Case
4.1
40
96
°C/W
°C/W
°C/W
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FDD8451
FDD8451
D-PAK(TO-252)
13’’
12mm
2500 units
©2008 Fairchild Semiconductor Corporation
FDD8451 Rev. B1
1
www.fairchildsemi.com
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250µA, VGS = 0V
40
V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 250µA, referenced to
25°C
33.5
mV/°C
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
VDS = 32V, VGS = 0V
VGS = ±20V, VDS = 0V
1
µA
±100
nA
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250µA
1
2.1
3
V
∆VGS(th)
∆TJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250µA, referenced to
25°C
-5.7
mV/°C
VGS = 10V, ID = 9A
VGS = 4.5V, ID = 7A
19
23
24
30
rDS(on)
Drain to Source On Resistance
Forward Transcondductance
mΩ
VGS = 10V, ID = 9A
TJ = 150°C
32
29
41
gFS
VDS = 5V, ID = 9A
S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
780
112
72
990
150
110
pF
pF
pF
Ω
VDS = 20V, VGS = 0V,
f = 1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
f = 1MHz
1.1
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
7
3
14
10
34
10
20
11
ns
ns
VDD = 20V, ID = 9A
VGS = 10V, RGEN = 6Ω
Turn-Off Delay Time
Fall Time
19
2
ns
ns
Qg
Total Gate Charge at 10V
Total Gate Charge at 5V
Gate to Source Gate Charge
Gate to Drain “Miller”Charge
16
8.6
2.5
3.7
nC
nC
nC
nC
Qg
VDS= 20V, ID = 9A
VGS = 10V
Qgs
Qgd
Drain-Source Diode Characteristics
VSD
trr
Source to Drain Diode Forward Voltage VGS = 0V, IS = 9A
0.87
25
1.2
38
29
V
Reverse Recovery Time
IF = 9A, di/dt = 100A/µs
IF = 9A, di/dt = 100A/µs
ns
nC
Qrr
Reverse Recovery Charge
19
Notes:
1: Pulse time < 300µs, Duty cycle = 2%.
o
2: Starting T = 25 C, L = 0.1mH, I = 20A ,V = 36V, V = 10V.
J
AS
DD
GS
FDD8451 Rev. B1
2
www.fairchildsemi.com
Typical Characteristics TJ = 25°C unless otherwise noted
4.0
60
50
40
30
20
10
0
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
V
= 10V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
GS
3.5
3.0
2.5
2.0
1.5
1.0
0.5
V
= 4V
GS
V
= 3V
GS
VGS = 3.5V
V
= 4.5V
V
GS
= 3.5V
= 3V
GS
VGS = 4V
VGS = 5V
V
VGS = 10V
GS
0
10
20
30
40
50
60
0
1
2
3
4
ID, DRAIN CURRENT(A)
V
, DRAIN TO SOURCE VOLTAGE (V)
DS
Figure 1. On Region Characteristics
Figure 2. Normalized On-Resistance vs Drain
Current and Gate Voltage
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
160
I
= 9A
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
D
I
D
= 10A
V
= 10V
GS
120
80
40
0
T = 175oC
J
T
= 25oC
J
-80
-40
0
40
80
120
160
200
2
4
6
8
10
TJ, JUNCTION TEMPERATURE (oC)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On Resistance vs Junction
Temperature
Figure 4. On-Resistance vs Gate to Source
Voltage
40
100
V
GS
= 0V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
10
1
30
20
T = 175oC
J
T
J
= 25oC
T = 175oC
J
0.1
T
J
= -55oC
10
T
J
= 25oC
0.01
T
J
= -55oC
0
1.5
1E-3
2.0
2.5
3.0
3.5
4.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VGS, GATE TO SOURCE VOLTAGE (V)
V , BODY DIODE FORWARD VOLTAGE (V)
SD
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode Forward
Voltage vs Source Current
FDD8451 Rev. B1
3
www.fairchildsemi.com
Typical Characteristics TJ = 25°C unless otherwise noted
10
3000
C
iss
1000
100
10
8
6
4
2
0
V
= 15V
DD
C
oss
V
= 20V
DD
V
DD
= 25V
C
rss
f = 1MHz
= 0V
V
GS
0
4
8
12
16
0.1
1
10
40
VDS, DRAIN TO SOURCE VOLTAGE (V)
Q , GATE CHARGE(nC)
g
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs Drain to Source Voltage
100
30
25
o
= 25 C
V
= 10V
20
15
10
5
GS
T
J
10
o
T
J
= 125 C
V
GS
=4.5V
o
T
J
= 150 C
o
R
= 4.1 C/W
θJC
1
1E-3
0
0.01
t
0.1
1
10
100
175
100 120 140 160
40
60
80
, TIME IN AVALANCHE(ms)
AV
TC, CASE TEMPERATURE(oC)
Figure 9. Unclamped Inductive Switching
Capability
Figure 10. Maximum Continuous Drain Current vs
Case Temperature
10000
100
o
T
= 25 C
C
100us
VGS = 10V
FOR TEMPERATURES
o
ABOVE 25 C DERATE PEAK
CURRENT AS FOLLOWS:
1ms
1000
100
10
10
175 – T
C
---------------------
I = I
25
LIMITED BY
PACKAGE
150
OPERATION IN THIS
1
AREA MAY BE
LIMITED BY r
DS(on)
10ms
SINGLE PULSE
100ms
DC
T
J
= MAX RATED
= 25OC
SINGLE PULSE
T
C
0.1
1
10-5
10-4
10-3
t, PULSE WIDTH (s)
10-2
10-1
100
101
80
10
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe Operating Area
Figure 12. Single Pulse Maximum Power
Dissipation
FDD8451 Rev. B1
4
www.fairchildsemi.com
Typical Characteristics TJ = 25°C unless otherwise noted
2
1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
P
DM
0.1
0.02
0.01
t
1
t
2
NOTES:
DUTY FACTOR: D = t /t
SINGLE PULSE
0.01
1
2
PEAK T = P
x Z
x R
+ T
θJC C
J
DM
θJC
0.005
10-5
10-4
10-3
10-2
10-1
100
101
t, RECTANGULAR PULSE DURATION (s)
Figure 13. Transient Thermal Response Curve
FDD8451 Rev. B1
5
www.fairchildsemi.com
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*
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Definition of Terms
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This datasheet contains the design specifications for product development.
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Advance Information
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Rev. I34
FDD8451 Rev. B1
6
www.fairchildsemi.com
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