FDD8453LZ_F085 [FAIRCHILD]
Power Field-Effect Transistor, 50A I(D), 40V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, DPAK-3;
| 型号： | FDD8453LZ_F085 |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Power Field-Effect Transistor, 50A I(D), 40V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, DPAK-3 开关 晶体管 |
| 文件： | 总7页 (文件大小：370K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Aug 2012
FDD8453LZ_F085
®
N-Channel Power Trench MOSFET
40V, 50A, 6.5mΩ
Features
Typ rDS(on) = 5mΩ at VGS = 10V, ID = 15A
General Description
Typ rDS(on) = 6mΩ at VGS = 4.5V, ID = 13A
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench® process that
has been especially tailored to minimize the on-state
resistance and switching loss. G-S zener has been added
HBM ESD protection level > 7kv typical
RoHS Compliant
Qualified to AEC Q101
to enhance ESD voltage level.
Applications
Inverter
Synchronous Rectifier
Symbol
Package
D
D
G
G
S
D-PAK
(TO-252)
S
©2012 Fairchild Semiconductor Corporation
FDD8453LZ_F085 Rev. C1
1
www.fairchildsemi.com
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
Parameter
Ratings
40
Units
Drain to Source Voltage
Gate to Source Voltage
V
V
VGS
±20
Drain Current
- Continuous (Package limited)
-Pulsed
TC = 25°C
50
ID
A
Figure4
88
EAS
PD
Single Pulse Avalanche Energy
(Note 1)
mJ
W
W/oC
oC
Power Dissipation
Dreate above 25oC
118
0.79
TJ, TSTG Operating and Storage Temperature
-55 to + 175
Thermal Characteristics
RθJC
RθJA
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient, 1in2 copper pad area
1.27
52
oC/W
oC/W
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
13”
Tape Width
12mm
Quantity
2500 units
FDD8453LZ
FDD8453LZ_F085
D-PAK(TO-252)
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
IDSS
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ID = 250μA, VGS = 0V
40
-
-
-
-
-
-
1
V
V
DS = 32V,
μA
uA
VGS = 0V
TC = 150oC
-
250
±10
IGSS
VGS = ±20V
-
On Characteristics
VGS(th)
rDS(on)
gFS
Gate to Source Threshold Voltage
VGS = VDS, ID = 250μA
D = 15A, VGS= 10V
1.0
1.8
5.0
6.0
9.4
91
3.0
6.5
7.8
12.2
-
V
I
-
-
mΩ
mΩ
mΩ
S
Drain to Source On Resistance
Forward Transconductance
ID = 13A, VGS= 4.5V
ID = 15A, VGS= 10V TJ=175oC
-
VDS = 5V, ID = 15A
-
Dynamic Characteristics
Ciss
Input Capacitance
-
-
-
-
-
-
-
-
2935
340
260
1.8
60
-
-
pF
pF
pF
Ω
VDS = 20V, VGS = 0V,
f = 1MHz
Coss
Crss
Rg
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
-
f = 1MHz
-
Qg(ToT)
Qg(5)
Qgs
Total Gate Charge at 10V
Total Gate Charge at 5V
Gate to Source Gate Charge
Gate to Drain “Miller“ Charge
VGS = 0 to 10V
78
42
-
nC
nC
nC
nC
V
I
DD = 20V
D = 15A
Ig=1mA
VGS = 0 to 5V
32
7.5
13
Qgd
-
FDD8453LZ_F085 Rev. C1
2
www.fairchildsemi.com
Electrical Characteristics TC = 25oC unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Switching Characteristics
ton
td(on)
tr
Turn-On Time
Turn-On Delay Time
Rise Time
-
-
-
-
-
-
-
34
-
ns
ns
ns
ns
ns
ns
12
10
43
7
-
V
V
DD = 20V, ID = 15A,
GS = 10V, RGEN = 6Ω
td(off)
tf
Turn-Off Delay Time
Fall Time
-
-
toff
Turn-Off Time
-
80
Drain-Source Diode Characteristics
I
SD = 2A
-
-
-
-
0.7
0.8
25
1.2
1.3
33
V
VSD
Source to Drain Diode Voltage
ISD = 15A
V
trr
Reverse Recovery Time
ns
nC
IF = 15A, dISD/dt = 100A/μs
Qrr
Reverse Recovery Charge
14
19
Notes:
o
1: Starting T = 25 C, L = 0.11mH, I
= 40A, V
= 36V during inductor charging and V = 0V during the time in Avalanche.
J
AS
D
D
D
D
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For
a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
FDD8453LZ_F085 Rev. C1
3
www.fairchildsemi.com
Typical Characteristics
1.2
1.0
0.8
0.6
0.4
0.2
0.0
120
90
60
30
0
CURRENT LIMITED
BY PACKAGE
VGS = 10V
0
25
50
75
100
125
150
175
25
50
75
100
125
150
175
TC, CASE TEMPERATURE(oC)
TC, CASE TEMPERATURE(oC)
Figure 2. Maximum Continuous Drain Current vs
Case Temperature
Figure 1. Normalized Power Dissipation vs Case
Temperature
2
DUTY CYCLE - DESCENDING ORDER
1
D = 0.50
0.20
P
DM
0.10
0.05
0.02
t
0.01
1
0.1
t
2
NOTES:
DUTY FACTOR: D = t /t
1
2
SINGLE PULSE
PEAK T = P
x Z
x R
+ T
J
DM
θJA
θJA C
0.01
10-5
10-4
10-3
10-2
10-1
100
101
t, RECTANGULAR PULSE DURATION(s)
Figure 3. Normalized Maximum Transient Thermal Impedance
1E4
1000
100
10
TC = 25oC
VGS = 10V
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
175 - TC
I = I2
150
SINGLE PULSE
10-5
10-4
10-3
10-2
10-1
100
101
t, RECTANGULAR PULSE DURATION(s)
Figure 4. Peak Current Capability
FDD8453LZ_F085 Rev. C1
4
www.fairchildsemi.com
Typical Characteristics
1000
100
10
1000
If R = 0
= (L)(I )/(1.3*RATED BV
t
AV
- V
)
AS
DSS
DD
If R
AV
≠ 0
t
= (L/R)ln[(I *R)/(1.3*RATED BV
- V ) +1]
AS
DSS DD
100
10
STARTING TJ = 25oC
100us
1ms
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(on)
1
STARTING TJ = 150oC
SINGLE PULSE
T
= MAX RATED
J
10ms
DC
o
T
C
= 25 C
1
0.1
0.001
0.01
0.1
1
10
100
1000
1
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
100
tAV, TIME IN AVALANCHE (ms)
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching
Capability
Figure 5. Forward Bias Safe Operating Area
100
100
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
VGS = 10V
VGS = 4V
VDD = 5V
75
VGS = 3.5V
75
50
25
0
VGS = 4.5V
50
TJ = 175oC
25
VGS = 3V
TJ = 25oC
TJ = -55oC
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
0
0
1
2
3
4
5
0.0
0.4
0.8
1.2
1.6
2.0
VGS, GATE TO SOURCE VOLTAGE (V)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Transfer Characteristics
Figure 8. Saturation Characteristics
21
2.2
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
ID = 15A
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
18
15
12
9
TJ = 175oC
TJ = 25oC
6
ID = 15A
V
GS = 10V
3
2
4
6
8
10
-80
-40
0
40
80
120
160
200
o
TJ, JUNCTION TEMPERATURE( C)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 9. Drain to Source On-Resistance
Variation vs Gate to Source Voltage
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
FDD8453LZ_F085 Rev. C1
5
www.fairchildsemi.com
Typical Characteristics
1.4
1.2
1.0
0.8
0.6
0.4
1.15
1.10
1.05
1.00
0.95
0.90
VGS = VDS
ID = 1mA
I
D
= 250μA
-80
-40
0
40
80
120
160
200
-80
-40
0
40
80
120
160
200
TJ, JUNCTION TEMPERATURE (oC)
TJ, JUNCTION TEMPERATURE(oC)
Figure 11. Normalized Gate Threshold Voltage vs
Junction Temperature
Figure 12. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
10000
10
ID = 15A
Ciss
8
VDD = 15V
VDD = 20V
6
1000
4
Coss
VDD = 25V
2
0
f = 1MHz
Crss
VGS = 0V
100
0.1
1
10
40
0
10
20
30
40
50
60
70
Qg, GATE CHARGE(nC)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 13. Capacitance vs Drain to Source
Voltage
Figure 14. Gate Charge vs Gate to Source Voltage
FDD8453LZ_F085 Rev. C1
6
www.fairchildsemi.com
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Saving our world, 1mW/W/kW at a time™
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Definition of Terms
Datasheet Identification
Product Status
Definition
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Advance Information
Formative / In Design
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
Preliminary
First Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
No Identification Needed
Obsolete
Full Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Not In Production
Rev. I55
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FDD8453LZ_F085 Rev. C1
7
相关型号：
FDD850N10LD
Power Field-Effect Transistor, 15.3A I(D), 100V, 0.096ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AD, ROHS COMPLIANT, PLASTIC, DPAK-5/4
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