FDD8453LZ [ONSEMI]
N 沟道，Power Trench® MOSFET，40V，50A，6.7mΩ;
| 型号： | FDD8453LZ |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道，Power Trench® MOSFET，40V，50A，6.7mΩ 开关 脉冲 晶体管 |
| 文件： | 总9页 (文件大小：491K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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March 2015
FDD8453LZ
N-Channel PowerTrench® MOSFET
40V, 50A, 6.7mΩ
Features
General Description
Max rDS(on) = 6.7mΩ at VGS = 10V, ID = 15A
Max rDS(on) = 8.7mΩ at VGS = 4.5V, ID = 13A
HBM ESD protection level >7kV typical (Note 4)
RoHS Compliant
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench® process that has
been especially tailored to minimize the on-state resistance and
switching loss. G-S zener has been added to enhance ESD
voltage level.
Applications
Inverter
Synchronous Rectifier
D
D
G
G
S
D-PAK
(TO-252)
S
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDS
VGS
Parameter
Ratings
40
Units
Drain to Source Voltage
Gate to Source Voltage
V
V
±20
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
TC = 25°C
C = 25°C
50
T
75
ID
A
TA = 25°C
(Note 1a)
(Note 3)
(Note 1a)
16.4
100
-Pulsed
EAS
Single Pulse Avalanche Energy
Power Dissipation
253
mJ
W
TC = 25°C
TA = 25°C
65
PD
Power Dissipation
3.1
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
1.9
40
°C/W
(Note 1a)
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
13’’
Tape Width
16mm
Quantity
FDD8453LZ
FDD8453LZ
D-PAK (TO-252)
2500 units
1
©2007 Fairchild Semiconductor Corporation
FDD8453LZ Rev. 1.1
www.fairchildsemi.com
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250µA, VGS = 0V
40
V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 250µA, referenced to 25°C
36
mV/°C
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
VDS = 32V, VGS = 0V
VGS = ±20V, VDS = 0V
1
µA
µA
±10
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250µA
1.0
1.8
3.0
V
∆VGS(th)
∆TJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250µA, referenced to 25°C
-6.0
mV/°C
VGS = 10V, ID = 15A
VGS = 4.5V, ID = 13A
5.8
6.8
6.7
8.7
rDS(on)
Static Drain to Source On Resistance
Forward Transconductance
mΩ
VGS = 10V, ID = 15A,
TJ = 125°C
9.1
77
10.6
gFS
VDS = 5V, ID = 15A
S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
2640
320
190
2.3
3515
425
pF
pF
pF
Ω
VDS = 20V, VGS = 0V,
f = 1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
285
f = 1MHz
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
11
6
19
12
58
10
64
33
ns
ns
VDD = 20V, ID = 15A,
VGS = 10V, RGEN = 6Ω
Turn-Off Delay Time
Fall Time
37
5
ns
ns
Qg
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
VGS = 0V to 10V
46
24
7
nC
nC
nC
nC
VDD = 20V,
ID = 15A
Qg
VGS = 0V to 5V
Qgs
Qgd
8
Drain-Source Diode Characteristics
VGS = 0V, IS = 2.0A (Note 2)
0.7
0.8
25
1.2
1.3
40
VSD
Source to Drain Diode Forward Voltage
V
VGS = 0V, IS = 15A
(Note 2)
trr
Reverse Recovery Time
ns
IF = 15A, di/dt = 100A/µs
Qrr
Reverse Recovery Charge
20
32
nC
Notes:
1:
R
R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
θJA
θJC
is guaranteed by design while R
is determined by the user’s board design.
θJA
a)
40°C/W when mounted on a
1 in pad of 2 oz copper
b) 96°C/W when mounted
on a minimum pad.
2
2: Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.
3: Starting T = 25°C, L = 3mH, I = 13A, V = 40V, V = 10V.
J
AS
DD
GS
4: The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
2
www.fairchildsemi.com
©2007 Fairchild Semiconductor Corporation
FDD8453LZ Rev. 1.1
Typical Characteristics TJ = 25°C unless otherwise noted
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
100
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
V
= 10V
= 4.5V
GS
V
GS
VGS = 3V
80
60
40
20
0
V
= 4V
GS
VGS = 3.5V
V
= 3.5V
GS
VGS = 4V
V
= 3V
GS
VGS = 10V
VGS = 4.5V
60
0
20
40
80
100
0.0
0.4
0.8
1.2
1.6
2.0
ID, DRAIN CURRENT (A)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
Figure2. N o r m a l i z e d O n - R e s i s ta n c e
vs Drain Current and Gate Voltage
21
1.8
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
ID = 15A
ID = 15A
VGS = 10V
18
15
12
9
1.6
1.4
1.2
1.0
0.8
0.6
TJ = 125oC
TJ = 25oC
6
3
-75 -50 -25
0
25 50 75 100 125 150
2
4
6
8
10
TJ, JUNCTION TEMPERATURE (oC)
VGS, GATE TO SOURCE VOLTAGE (V)
F i gu re 3 . N orma li zed On - Res is ta nc e
vs Junction Temperature
Figure4. On-Resistance vs Gate to
Source Voltage
100
100
PULSE DURATION = 80µs
VGS = 0V
DUTY CYCLE = 0.5%MAX
80
60
40
20
0
10
1
VDS = 5V
TJ = 150oC
TJ = 25oC
0.1
TJ = 150oC
TJ = 25oC
0.01
TJ = -55oC
1.0
TJ = -55oC
4
1E-3
1
2
3
5
0.0
0.2
0.4
0.6
0.8
1.2
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure6. Source to Drain Diode
Forward Voltage vs Source Current
3
www.fairchildsemi.com
©2007 Fairchild Semiconductor Corporation
FDD8453LZ Rev. 1.1
Typical Characteristics TJ = 25°C unless otherwise noted
10
4000
1000
ID = 15A
Ciss
8
VDD = 15V
6
VDD = 20V
Coss
4
VDD = 25V
Crss
2
0
f = 1MHz
= 0V
V
GS
100
0.1
40
1
10
0
10
20
30
40
50
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics
Figure8. C a p a c i t a n c e v s D r a i n
to Source Voltage
104
103
102
101
100
10-1
10-2
10-3
10-4
20
10
VGS = 0V
TJ = 150oC
TJ = 125oC
TJ = 25oC
TJ = 25oC
1
0.01
0.1
1
10
100
1000
0
5
10
15
20
25
30
tAV, TIME IN AVALANCHE (ms)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure9. U n c l a m p e d I n d u c t i v e
Switching Capability
Figure 10. Gate Leakage Current vs Gate to
Source Voltage
80
60
40
20
0
200
100
100us
1ms
10
1
VGS = 10V
THIS AREA IS
LIMITED BY rds(on)
VGS = 4.5V
Limited by Package
SINGLE PULSE
TJ = MAX RATED
10ms
DC
R
θJC = 1.9oC/W
θJC = 1.9oC/W
TC = 25oC
R
0.1
0.1
25
50
75
100
125
150
1
10
100
TC, CASE TEMPERATURE (oC)
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Maximum Continuous Drain
Current vs Ambient Temperature
Figure12. Forward Bias Safe
Operating Area
4
www.fairchildsemi.com
©2007 Fairchild Semiconductor Corporation
FDD8453LZ Rev. 1.1
Typical Characteristics TJ = 25°C unless otherwise noted
8000
VGS =10V
SINGLE PULSE
RθJC = 1.9oC/W
1000
o
TC = 25 C
100
50
10-5
10-4
10-3
10-2
10-1
100
101
102
103
t, PULSE WIDTH (s)
Figure 13. Single Pulse Maximum Power Dissipation
2
1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
P
DM
0.05
0.02
0.01
0.1
t
1
t
2
NOTES:
DUTY FACTOR: D = t /t
1
2
PEAK T = P
x Z
x R
+ T
J
DM
θJC
θJC C
SINGLE PULSE
0.01
R
θJC = 1.9oC/W
0.005
10-5
10-4
10-3
10-2
10-1
100
101
t, RECTANGULAR PULSE DURATION (s)
Figure 14. Transient Thermal Response Curve
2
1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
P
0.05
0.02
0.01
DM
0.1
t
1
t
2
SINGLE PULSE
RθJA = 40oC/W
(Note 1a)
NOTES:
DUTY FACTOR: D = t /t
1
2
PEAK T = P
x Z
x R
+ T
θJA A
0.01
J
DM
θJA
0.005
10-3
10-2
10-1
100
101
102
103
t, RECTANGULAR PULSE DURATION (s)
Figure 15. Transient Thermal Response Curve
5
www.fairchildsemi.com
©2007 Fairchild Semiconductor Corporation
FDD8453LZ Rev. 1.1
Typical Characteristics TJ = 25°C unless otherwise noted
2
DUTY CYCLE-DESCENDING ORDER
1
D = 0.5
0.2
0.1
0.05
0.1
P
DM
0.02
0.01
t
1
t
2
0.01
NOTES:
DUTY FACTOR: D = t /t
SINGLE PULSE
RθJA = 96oC/W
1
2
PEAK T = P
x Z
x R
+ T
J
DM
θJA
θJA A
(Note 1b)
0.002
10-3
10-2
10-1
100
101
102
103
t, RECTANGULAR PULSE DURATION (s)
Figure 16. Transient Thermal Response Curve
6
www.fairchildsemi.com
©2007 Fairchild Semiconductor Corporation
FDD8453LZ Rev. 1.1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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