FDD8445_07 [FAIRCHILD]
N-Channel PowerTrench㈢ MOSFET 40V, 50A, 8.7mヘ; N沟道MOSFET PowerTrench㈢ 40V , 50A , 8.7米ヘ型号: | FDD8445_07 |
厂家: | FAIRCHILD SEMICONDUCTOR |
描述: | N-Channel PowerTrench㈢ MOSFET 40V, 50A, 8.7mヘ |
文件: | 总7页 (文件大小:367K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
March 2007
tm
FDD8445
®
N-Channel PowerTrench MOSFET
40V, 50A, 8.7mΩ
Features
Applications
RDS(ON) = 6.7 mΩ (Typ), VGS = 10V, ID=50A
Automotive Engine Control
Qg(10) = 45nC (Typ), VGS=10V
Low Miller Charge
Powertrain Management
Solenoid and Motor Drivers
Electronic Transmission
Low Qrr Body Diode
UIS Capability (Single Pulse/ Repetitive Pulse)
Qualified to AEC Q101
Distributed Power Architecture and VRMs
Primary Switch for 12V Systems
RoHS Compliant
D
G
S
©2007 Fairchild Semiconductor Corporation
1
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FDD8445 Rev A (W)
Absolute Maximum Ratings Tc = 25°C unless otherwise noted
Symbol
VDSS
VGS
Parameter
Ratings
40
Units
Drain to Source Voltage
Gate to Source Voltage
V
V
A
A
±20
Drain Current Continuous (VGS=10v) (Note 1)
Continuous (VGS=10v,with RθJA = 52oC/W)
Pulsed
70
ID
15.2
Figure 4
1 4 4
EAS
S i n g l e P u l s e A v a l a n c h e E n e r g y ( N o t e 2 )
mJ
W
W/oC
oC
Power Dissipation
Derate above 25oC
79
PD
0.53
TJ, TSTG
Operating and Storage Temperature
-55 to +175
Thermal Characteristics
RθJC
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient TO-252, lin2 copper pad area
1.9
52
oC/W
oC/W
RθJA
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
2500 units
FDD8445
FDD8445
TO-252AA
13”
12mm
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ID = 250μA, VGS = 0V
40
-
-
-
-
-
-
V
1
μA
VDS = 32V
IDSS
VGS = 0V
TJ=150°C
-
250
±100
IGSS
VGS = ±20V
-
nA
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VDS = VGS, ID = 250μA
2
-
2.8
6.7
4
V
ID = 50A, VGS = 10V
8.7
RDS(ON)
Drain to Source On Resistance
mΩ
ID = 50A, VGS = 10V,
TJ = 175°C
-
12.5
16.3
Dynamic Characteristics
CISS
COSS
CRSS
RG
Input Capacitance
-
-
-
-
-
-
-
-
-
-
3040
295
178
1.7
4050
390
270
-
pF
pF
pF
Ω
VDS = 25V, VGS = 0V,
f = 1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
f = 1MHz
Qg(TOT)
Qg(5)
Qg(TH)
Qgs
Total Gate Charge at 10V
Total Gate Charge at 5V
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
VGS = 0 to 10V
VGS = 0 to 5V
45
59
22
7.6
-
nC
nC
nC
nC
nC
nC
17
VGS = 0 to 2V
5.8
VDD=20V,
ID = 50A
12.5
9.5
Qgs2
Qgd
-
10.5
-
FDD8445 Rev A (W)
2
www.fairchildsemi.com
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Switching Characteristics
t(on)
td(on)
tr
Turn-On Time
-
-
-
-
-
-
-
138
ns
ns
ns
ns
ns
ns
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Turn-Off Time
10
82
26
9.6
-
-
-
V
V
DD = 20V, ID = 50A
GS = 10V, RGS = 2Ω
td(off)
tf
-
-
toff
53
Drain-Source Diode Characteristics
I
SD=50A
-
-
-
-
-
-
-
-
1.25
1.0
39
V
V
VSD
Source to Drain Diode Voltage
ISD=25A
trr
Reverse Recovery Time
Reverse Recovery Charge
IF= 50A, dIF/dt=100A/μs
IF= 50A, dIF/dt=100A/μs
ns
nC
Qrr
38
Notes:
1: Maximum package current capability is 50A.
o
2: Starting T = 25 C, L=0.18mH, I =40A.
J
AS
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For
a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
FDD8445 Rev A (W)
3
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Typical Characteristics
1.2
80
60
40
20
0
VGS=10V
CURRENT LIMITED
BY PACKAGE
1.0
0.8
0.6
0.4
0.2
0.0
0
25
50
75
100
125
150
175
25
50
75
100
125
150
175
TC, CASE TEMPERATURE(oC)
TC , CASE TEMPERATURE(oC)
Figure 1. Normalized Power Dissipation vs Case
Temperature
Figure 2. Maximum Continuous Drain Current vs
Case Temperature
2
DUTY CYCLE - DESCENDING ORDER
1
D = 0.50
0.20
P
DM
0.10
0.05
0.1
0.02
0.01
t
1
t
2
NOTES:
DUTY FACTOR: D = t /t
1
2
PEAK T = P
x Z
x R
+ T
J
DM
θJC
θJC C
SINGLE PULSE
0.01
10-5
10-4
10-3
10-2
10-1
100
101
t, RECTANGULAR PULSE DURATION(s)
Figure 3. Normalized Maximum Transient Thermal Impedance
2000
1000
o
VGS = 10V
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
T
= 25 C
C
FOR TEMPERATURES
o
ABOVE 25 C DERATE PEAK
CURRENT AS FOLLOWS:
175 - T
150
C
I = I
25
100
SINGLE PULSE
10-5
10
10-4
10-3
10-2
10-1
100
101
t, RECTANGULAR PULSE DURATION(s)
Figure 4. Peak Current Capability
FDD8445 Rev A (W)
4
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Typical Characteristics
200
100
1000
If R = 0
= (L)(I )/(1.3*RATED BV
t
AV
- V
)
AS
DSS
DD
10us
If R
≠ 0
t
AV
= (L/R)ln[(I *R)/(1.3*RATED BV
- V ) +1]
DSS DD
AS
100
100us
STARTING TJ = 25OC
10
10
CURRENT LIMITED
BY PACKAGE
1ms
STARTING TJ = 150OC
1
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(ON)
SINGLE PULSE
10ms
DC
TJ = MAX RATED
TC = 25oC
0.1
1
1
0.01
10
100
0.1
1
10
100
1000
tAV, TIME IN AVALANCHE (ms)
VDS, DRAIN-SOURCE VOLTAGE (V)
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Indutive Switching
Figure 5. Forward Bias Safe Operating Area
Capability
120
140
PULSE DURATION=80μs
DUTY CYCLE=0.5% MAX
5.0V
120
100
80
60
40
20
0
VGS=10V
100
80
60
40
20
0
VDD = 6V
PULSE DURATION =80μS
DUTY CYCLE =0.5% MAX
TJ = 175OC
TJ = 25OC
4.5V
TJ = - 55OC
4.0V
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
VDS, DRAIN TO SOURCE VOLTAGE (V)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 7. Transfer Characteristics
Figure 8. Saturation Characteristics
20
16
12
8
2.0
PULSE DURATION=80μS
DUTY CYCLE=0.5%MAX
PULSE DURATION =80μS
DUTY CYCLE =0.5% MAX
ID=12A
1.8
1.6
1.4
1.2
1.0
0.8
0.6
TJ = 175oC
TJ = 25oC
I
= 50A
D
V
= 10V
GS
4
-80
-40
0
40
80
120
o
160
200
3.5
10
4.5
6.0
7.5
9.0
TJ, JUNCTION TEMPERATURE( C)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
Figure 9. Drain to Source On-Resistance
Variation vs Gate to Source Voltage
FDD8445 Rev A (W)
5
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Typical Characteristics
1.10
1.05
1.00
0.95
0.90
1.2
VGS=VDS
ID =250μA
1.1
ID =250μA
1.0
0.9
0.8
0.7
0.6
0.5
-80
-40
0
40
80
120
160
200
-80
-40
0
40
80
120
160
200
TJ, JUNCTION TEMPERATURE (oC)
TJ, JUNCTION TEMPERATURE (oC)
Figure 11. Normalized Gate Threshold Voltage vs
Junction Temperature
Figure 12. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
10000
10
VDD=15V
ID=50A
f = 1MHz
CISS
VGS = 0V
8
VDD=20V
VDD=25V
6
1000
COSS
4
2
0
CRSS
100
0.1
0
20
40
60
1
10
40
Qg , GATE CHARGE (nC)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 13. Capacitance vs Drain to Source
Voltage
Figure 14. Gate Charge vs Gate to Source
Voltage
FDD8445 Rev A (W)
6
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tm
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body or
(b) support or sustain life, and (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in a significant injury of the user.
2. A critical component in any component of a life support,
device, or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
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Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In Design
This datasheet contains the design specifications for product
development. Specifications may change in any manner
without notice.
Preliminary
First Production
Full Production
Not In Production
This datasheet contains preliminary data; supplementary data
will be published at a later date. Fairchild Semiconductor
reserves the right to make changes at any time without notice
to improve design.
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time without notice to improve design.
This datasheet contains specifications on a product that has
been discontinued by Fairchild Semiconductor.The datasheet
is printed for reference information only.
Rev. I24
FDD8445 Rev A (W)
7
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相关型号:
FDD8447L_F085
Power Field-Effect Transistor, 50A I(D), 40V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, DPAK-3
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