FDD8447L [FAIRCHILD]
N-Channel PowerTrench MOSFET 40V, 54A, 8.5mOhm; N沟道PowerTrench MOSFET的40V ， 54A ， 8.5mOhm
| 型号： | FDD8447L |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | N-Channel PowerTrench MOSFET 40V, 54A, 8.5mOhm |
| 文件： | 总6页 (文件大小：536K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
May 2008
FDD8447L
40V N-Channel PowerTrench® MOSFET
40V, 50A, 8.5mΩ
Features
General Description
Max rDS(on) = 8.5mΩ at VGS = 10V, ID = 14A
Max rDS(on) = 11.0mΩ at VGS = 4.5V, ID = 11A
Fast Switching
This N-Channel MOSFET has been produced using Fairchild
Semiconductor’s proprietary PowerTrench® technology to
deliver low rDS(on) and optimized BVDSS capability to offer
superior performance benefit in the application.
RoHS Compliant
Applications
Inverter
Power Supplies
D
D
G
G
S
D-PAK
(TO-252)
S
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDS
VGS
Parameter
Ratings
40
Units
Drain to Source Voltage
Gate to Source Voltage
V
V
±20
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
TC= 25°C
TC= 25°C
TA= 25°C
50
57
ID
A
(Note 1a)
15.2
100
-Pulsed
IS
Max Pulse Diode Current
Drain-Source Avalanche Energy
100
A
EAS
(Note 3)
153
mJ
Power Dissipation
TC= 25°C
TA= 25°C
TA= 25°C
44
PD
(Note 1a)
3.1
W
(Note 1b)
1.3
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
RθJC
RθJA
RθJA
Thermal Resistance, Junction to Case
2.8
40
96
°C/W
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
(Note 1a)
(Note 1b)
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
13’’
Tape Width
12mm
Quantity
FDD8447L
FDD8447L
D-PAK(TO-252)
2500 units
1
©2008 Fairchild Semiconductor Corporation
FDD8447L Rev.C3
www.fairchildsemi.com
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250µA, VGS = 0V
40
V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
I
D = 250µA, referenced to 25°C
35
mV/°C
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
VDS = 32V, VGS = 0V
VGS = ±20V, VGS = 0V
1
µA
±100
nA
On Characteristics (Note 2)
VGS(th)
∆VGS(th)
∆TJ
Gate to Source Threshold Voltage
VGS = VDS, ID = 250µA
1.0
1.9
3.0
V
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250µA, referenced to 25°C
-5
mV/°C
V
GS = 10V, ID = 14A
7.0
8.5
10.4
58
8.5
11.0
14.0
rDS(on)
Static Drain to Source On Resistance
Forward Transconductance
VGS = 4.5V, ID = 11A
mΩ
VGS = 10V, ID = 14A, TJ=125°C
VDS = 5V, ID = 14A
gFS
S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
1970
250
pF
pF
pF
Ω
V
DS = 20V, VGS = 0V,
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
f = 1MHz
150
f = 1MHz
1.27
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
12
12
38
9
21
21
61
18
52
28
ns
ns
VDD = 20V, ID = 1A
VGS = 10V, RGEN = 6Ω
Turn-Off Delay Time
Fall Time
ns
ns
Qg(TOT)
Qg(TOT)
Qgs
Total Gate Charge, VGS = 10V
Total Gate Charge, VGS = 5V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
37
20
6
nC
nC
nC
nC
VDD = 20V, ID = 14A
VGS = 10V
Qgd
7
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain-Source Diode Forward Current
(Note 1a)
2.6
A
VSD
trr
Source to Drain Diode Forward Voltage
Reverse Recovery Time
VGS = 0V, IS = 14A
(Note 2)
0.8
22
11
1.2
V
ns
nC
IF = 14A, di/dt = 100A/µs
Qrr
Reverse Recovery Charge
Notes:
1:
R
is the sum of the junction-to-case and case-to- ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
θJA
RθJC is guaranteed by design while RθJA is determined by the user’s board design.
---------------
a. 40°C/W when mounted on a 1 in2 pad of 2 oz copper
b. 96°C/W when mounted on a minimum pad.
2: Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.
o
3: Starting TJ = 25 C, L = 1mH, IAS = 17.5A, VDD = 40V, VGS = 10V.
www.fairchildsemi.com
2
FDD8447L Rev.C3
Typical Characteristics
3
2.6
2.2
1.8
1.4
1
100
VGS = 10V
6.0V
4.0V
VGS = 3.0V
80
60
40
20
0
4.5V
5.0V
3.5V
3.5V
4.0V
4.5V
5.0V
60
6.0V
10.0V
3.0V
0.6
0
20
40
80
100
0
0.5
1
1.5
2
2.5
VDS, DRAIN-SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage
0.02
1.6
1.4
1.2
1
ID = 14A
ID = 7A
V
GS = 10V
0.0175
0.015
0.0125
0.01
TA = 125oC
TA = 25oC
0.8
0.0075
0.005
0.6
-50
-25
0
25
50
75
100
125
150
2
4
6
8
10
TJ, JUNCTION TEMPERATURE (oC)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage
1000
100
80
60
40
20
0
VGS = 0V
VDS = 5V
100
10
1
TA = 125oC
0.1
25oC
-55oC
TA = 125oC
0.01
0.001
0.0001
-55oC
25oC
1
1.5
2
2.5
3
3.5
4
4.5
0
0.2
0.4
0.6
0.8
1
1.2
1.4
VSD, BODY DIODE FORWARD VOLTAGE (V)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature
FDD8447L Rev.C3
3
www.fairchildsemi.com
Typical Characteristics
10
3000
2500
2000
1500
1000
500
f = 1MHz
VGS = 0 V
VDS = 10V
ID = 14A
30V
8
6
4
2
0
20V
Ciss
Coss
Crss
0
0
10
20
30
40
0
10
20
30
40
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance Characteristics
100
80
60
40
20
0
1000
SINGLE PULSE
RθJA = 96°C/W
TA = 25°C
100µs
100
10
RDS(ON) LIMIT
1ms
10ms
100ms
1s
DC
1
VGS = 10V
SINGLE PULSE
RθJA = 96oC/W
0.1
T
A = 25oC
0.01
0.001
0.01
0.1
1
10
100
1000
0.01
0.1
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
t1, TIME (sec)
Figure 9. Maximum Safe Operating Area
Figure 10. Single Pulse Maximum
Power Dissipation
100
100
10
1
SINGLE PULSE
RθJA = 96°C/W
TA = 25°C
80
60
40
20
0
TJ = 25oC
0.1
1
10
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
tAV, TIME IN AVANCHE(ms)
Figure 11. Single Pulse Maximum Peak
Current
Figure 12. Unclamped Inductive Switching
Capability
FDD8447L Rev.C3
4
www.fairchildsemi.com
Typical Characteristics
1
D = 0.5
RθJA(t) = r(t) * RθJA
RθJA = 96°C/W
0.2
0.1
0.1
0.05
P(pk)
0.02
0.01
t1
t2
J - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
0.01
SINGLE
T
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 13. Transient Thermal Response Curve
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDD8447L Rev.C3
5
www.fairchildsemi.com
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global
subsidianries, and is not intended to be an exhaustive list of all such trademarks.
ACEx®
FPS™
PDP-SPM™
The Power Franchise®
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
EcoSPARK®
EfficentMax™
F-PFS™
Power-SPM™
PowerTrench®
Programmable Active Droop™
QFET®
QS™
Quiet Series™
RapidConfigure™
FRFET®
Global Power ResourceSM
Green FPS™
Green FPS™ e-Series™
GTO™
TinyBoost™
TinyBuck™
TinyLogic®
TINYOPTO™
TinyPower™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
Saving our world 1mW at a time™ TinyPWM™
EZSWITCH™ *
SmartMax™
SMART START™
SPM®
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SuperMOS™
®
TinyWire™
µSerDes™
™
®
MicroPak™
Fairchild®
MillerDrive™
MotionMax™
Motion-SPM™
OPTOLOGIC®
UHC®
Ultra FRFET™
UniFET™
VCX™
Fairchild Semiconductor®
FACT Quiet Series™
FACT®
FAST®
OPTOPLANAR®
VisualMax™
®
FastvCore™
tm
FlashWriter®
*
* EZSWITCH™ and FlashWriter® are trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS
HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE
APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER
ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S
WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which,
(a) are intended for surgical implant into the body or (b)
support or sustain life, and (c) whose failure to perform when
properly used in accordance with instructions for use provided
in the labeling, can be reasonably expected to result in a
significant injury of the user.
2. A critical component in any component of a life support,
device, or system whose failure to perform can be reasonably
expected to cause the failure of the life support device or
system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
This datasheet contains the design specifications for product development.
Specifications may change in any manner without notice.
Advance Information
Formative or In Design
This datasheet contains preliminary data; supplementary data will be pub-
lished at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.
Preliminary
First Production
This datasheet contains final specifications. Fairchild Semiconductor reserves
the right to make changes at any time without notice to improve the design.
No Identification Needed
Obsolete
Full Production
This datasheet contains specifications on a product that is discontinued by
Fairchild Semiconductor. The datasheet is for reference information only.
Not In Production
Rev. I34
6
www.fairchildsemi.com
FDD8447L Rev.C3
相关型号：
FDD8447L_F085
Power Field-Effect Transistor, 50A I(D), 40V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, DPAK-3
FAIRCHILD
FDD8453LZ_F085
Power Field-Effect Transistor, 50A I(D), 40V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, DPAK-3
FAIRCHILD
©2020 ICPDF网 联系我们和版权申明