FDD8445_10 [FAIRCHILD]
N-Channel PowerTrench® MOSFET 40V, 50A, 8.7mΩ; N沟道MOSFET PowerTrench® 40V ， 50A ， 8.7mÎ ©
| 型号： | FDD8445_10 |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | N-Channel PowerTrench® MOSFET 40V, 50A, 8.7mΩ |
| 文件： | 总7页 (文件大小：528K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
January 2010
FDD8445_F085
®
N-Channel PowerTrench MOSFET
40V, 50A, 8.7mΩ
Features
Applications
RDS(ON) = 6.7 mΩ (Typ), VGS = 10V, ID=50A
Automotive Engine Control
Qg(10) = 45nC (Typ), VGS=10V
Low Miller Charge
Powertrain Management
Solenoid and Motor Drivers
Electronic Transmission
Low Qrr Body Diode
UIS Capability (Single Pulse/ Repetitive Pulse)
Distributed Power Architecture and VRMs
Primary Switch for 12V Systems
Qualified to AEC Q101
RoHS Compliant
D
G
S
©2010 Fairchild Semiconductor Corporation
FDD8445_F085 Rev A (W)
1
www.fairchildsemi.com
Absolute Maximum Ratings Tc = 25°C unless otherwise noted
Symbol
VDSS
VGS
Parameter
Ratings
40
Units
Drain to Source Voltage
Gate to Source Voltage
V
V
A
A
±20
Drain Current Continuous (VGS=10v) (Note 1)
Continuous (VGS=10v,with RθJA = 52oC/W)
Pulsed
70
ID
15.2
Figure 4
1 4 4
EAS
S i n g l e P u l s e A v a l a n c h e E n e r g y ( N o t e 2 )
mJ
W
W/oC
oC
Power Dissipation
Derate above 25oC
79
PD
0.53
TJ, TSTG
Operating and Storage Temperature
-55 to +175
Thermal Characteristics
RθJC
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient TO-252, lin2 copper pad area
1.9
52
oC/W
oC/W
RθJA
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
2500 units
FDD8445
FDD8445_F085
TO-252AA
13”
12mm
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ID = 250μA, VGS = 0V
40
-
-
-
-
-
-
V
1
μA
VDS = 32V
IDSS
VGS = 0V
TJ=150°C
-
250
±100
IGSS
VGS = ±20V
-
nA
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VDS = VGS, ID = 250μA
2
-
2.8
6.7
4
V
ID = 50A, VGS = 10V
8.7
RDS(ON)
Drain to Source On Resistance
mΩ
ID = 50A, VGS = 10V,
TJ = 175°C
-
12.5
16.3
Dynamic Characteristics
CISS
COSS
CRSS
RG
Input Capacitance
-
-
-
-
-
-
-
-
-
-
3040
295
178
1.7
4050
390
270
-
pF
pF
pF
Ω
VDS = 25V, VGS = 0V,
f = 1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
f = 1MHz
Qg(TOT)
Qg(5)
Qg(TH)
Qgs
Total Gate Charge at 10V
Total Gate Charge at 5V
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
VGS = 0 to 10V
VGS = 0 to 5V
45
59
22
7.6
-
nC
nC
nC
nC
nC
nC
17
VGS = 0 to 2V
5.8
VDD=20V,
ID = 50A
12.5
9.5
Qgs2
Qgd
-
10.5
-
FDD8445_F085 Rev A (W)
2
www.fairchildsemi.com
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Switching Characteristics
t(on)
td(on)
tr
Turn-On Time
-
-
-
-
-
-
-
138
ns
ns
ns
ns
ns
ns
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Turn-Off Time
10
82
26
9.6
-
-
-
VDD = 20V, ID = 50A
VGS = 10V, RGS = 2Ω
td(off)
tf
-
-
toff
53
Drain-Source Diode Characteristics
I
SD=50A
-
-
-
-
-
-
-
-
1.25
1.0
39
V
V
VSD
Source to Drain Diode Voltage
ISD=25A
trr
Reverse Recovery Time
Reverse Recovery Charge
IF= 50A, dIF/dt=100A/μs
IF= 50A, dIF/dt=100A/μs
ns
nC
Qrr
38
Notes:
1: Maximum package current capability is 50A.
o
2: Starting T = 25 C, L=0.18mH, I =40A.
J
AS
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For
a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
FDD8445_F085 Rev A (W)
3
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Typical Characteristics
1.2
80
60
40
20
0
VGS=10V
CURRENT LIMITED
BY PACKAGE
1.0
0.8
0.6
0.4
0.2
0.0
0
25
50
75
100
125
150
175
25
50
75
100
125
150
175
TC, CASE TEMPERATURE(oC)
TC , CASE TEMPERATURE(oC)
Figure 1. Normalized Power Dissipation vs Case
Temperature
Figure 2. Maximum Continuous Drain Current vs
Case Temperature
2
DUTY CYCLE - DESCENDING ORDER
1
D = 0.50
0.20
P
DM
0.10
0.05
0.1
0.02
0.01
t
1
t
2
NOTES:
DUTY FACTOR: D = t /t
1
2
PEAK T = P
x Z
x R
+ T
J
DM
θJC
θJC C
SINGLE PULSE
0.01
10-5
10-4
10-3
10-2
10-1
100
101
t, RECTANGULAR PULSE DURATION(s)
Figure 3. Normalized Maximum Transient Thermal Impedance
2000
1000
o
VGS = 10V
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
T
= 25 C
C
FOR TEMPERATURES
o
ABOVE 25 C DERATE PEAK
CURRENT AS FOLLOWS:
175 - T
150
C
I = I
25
100
SINGLE PULSE
10-5
10
10-4
10-3
10-2
10-1
100
101
t, RECTANGULAR PULSE DURATION(s)
Figure 4. Peak Current Capability
FDD8445_F085 Rev A (W)
4
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Typical Characteristics
200
100
1000
If R = 0
= (L)(I )/(1.3*RATED BV
t
AV
- V
)
AS
DSS
DD
10us
If R
≠ 0
t
AV
= (L/R)ln[(I *R)/(1.3*RATED BV
- V ) +1]
DSS DD
AS
100
100us
STARTING TJ = 25OC
10
10
CURRENT LIMITED
BY PACKAGE
1ms
STARTING TJ = 150OC
1
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(ON)
SINGLE PULSE
10ms
DC
TJ = MAX RATED
TC = 25oC
0.1
1
1
0.01
10
100
0.1
1
10
100
1000
tAV, TIME IN AVALANCHE (ms)
VDS, DRAIN-SOURCE VOLTAGE (V)
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Indutive Switching
Figure 5. Forward Bias Safe Operating Area
Capability
120
140
PULSE DURATION=80μs
DUTY CYCLE=0.5% MAX
5.0V
120
100
80
60
40
20
0
VGS=10V
100
80
60
40
20
0
VDD = 6V
PULSE DURATION =80μS
DUTY CYCLE =0.5% MAX
TJ = 175OC
TJ = 25OC
4.5V
TJ = - 55OC
4.0V
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
VDS, DRAIN TO SOURCE VOLTAGE (V)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 7. Transfer Characteristics
Figure 8. Saturation Characteristics
20
16
12
8
2.0
PULSE DURATION=80μS
DUTY CYCLE=0.5%MAX
PULSE DURATION =80μS
DUTY CYCLE =0.5% MAX
ID=12A
1.8
1.6
1.4
1.2
1.0
0.8
0.6
TJ = 175oC
TJ = 25oC
I
= 50A
D
V
= 10V
GS
4
-80
-40
0
40
80
120
o
160
200
3.5
10
4.5
6.0
7.5
9.0
TJ, JUNCTION TEMPERATURE( C)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
Figure 9. Drain to Source On-Resistance
Variation vs Gate to Source Voltage
FDD8445_F085 Rev A (W)
5
www.fairchildsemi.com
Typical Characteristics
1.10
1.05
1.00
0.95
0.90
1.2
VGS=VDS
ID =250μA
1.1
ID =250μA
1.0
0.9
0.8
0.7
0.6
0.5
-80
-40
0
40
80
120
160
200
-80
-40
0
40
80
120
160
200
TJ, JUNCTION TEMPERATURE (oC)
TJ, JUNCTION TEMPERATURE (oC)
Figure 11. Normalized Gate Threshold Voltage vs
Junction Temperature
Figure 12. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
10000
10
VDD=15V
ID=50A
f = 1MHz
VGS = 0V
CISS
8
VDD=20V
VDD=25V
6
1000
COSS
4
2
0
CRSS
100
0.1
0
20
40
60
1
10
40
Qg , GATE CHARGE (nC)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 13. Capacitance vs Drain to Source
Voltage
Figure 14. Gate Charge vs Gate to Source
Voltage
6
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FDD8445_F085 Rev A (W)
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
®
®
®
AccuPower™
Auto-SPM™
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
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PowerTrench
PowerXS™
The Power Franchise
SM
®
Global Power Resource
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Green FPS™ e-Series™
Gmax™
Programmable Active Droop™
®
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QS™
GTO™
Quiet Series™
RapidConfigure™
™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
®
TinyLogic
Current Transfer Logic™
TINYOPTO™
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TinyPWM™
®
DEUXPEED
Dual Cool™
Saving our world, 1mW/W/kW at a time™
SignalWise™
®
EcoSPARK
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SmartMax™
TriFault Detect™
TRUECURRENT™*
μSerDes™
MicroPak2™
MillerDrive™
MotionMax™
Motion-SPM™
OptiHiT™
SMART START™
®
®
SPM
®
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS™
SyncFET™
Sync-Lock™
®*
Fairchild
®
Fairchild Semiconductor
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®
®
UHC
®
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®
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®
OPTOPLANAR
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tm
®
*
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Definition of Terms
Datasheet Identification
Product Status
Definition
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Advance Information
Formative / In Design
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
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make changes at any time without notice to improve the design.
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Full Production
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Semiconductor. The datasheet is for reference information only.
Not In Production
Rev. I47
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FDD8445_F085 Rev A (W)
7
相关型号：
FDD8447L_F085
Power Field-Effect Transistor, 50A I(D), 40V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, DPAK-3
FAIRCHILD
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