TEA1205AT [NXP]
High efficiency DC/DC converter; 高效率DC / DC转换器
| 型号： | TEA1205AT |
| 厂家： | 
NXP |
| 描述： | High efficiency DC/DC converter |
| 文件： | 总16页 (文件大小：109K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INTEGRATED CIRCUITS
DATA SHEET
TEA1205AT
High efficiency DC/DC converter
1998 Mar 24
Preliminary specification
File under Integrated Circuits, IC03
Philips Semiconductors
Preliminary specification
High efficiency DC/DC converter
TEA1205AT
FEATURES
GENERAL DESCRIPTION
• Fully integrated DC/DC converter circuit
• Up conversion in 2 different modes
The TEA1205AT (see Fig.1) is a fully integrated DC/DC
converter circuit using the minimum amount of external
components. It is intended to be used to supply electronic
circuits with supply voltages of 3.3 or 5.5 V from
2, 3 or 4 NiCd cell batteries or one Li-ion battery at an
output power level up to 3.6 W (typ.) continuously, or 8 W
in GSM TDMA (1 : 8) burst mode. The switching frequency
of the converter can be synchronized to an external
high-frequency clock. Efficient, compact and dynamic
power conversion is achieved using a novel, digitally
controlled Pulse Width and Frequency Modulation
(PWFM) like control concept, integrated low RdsON CMOS
power switches with low parasitic capacitances and
synchronous rectification.
• High efficiency over wide load range
• Synchronizes to external high frequency clock
• Output power up to 3.6 W (typ.) continuous, 8 W in GSM
burst mode
• Low quiescent power consumption
• True current limit for Li-ion battery compatibility
• Shut-down function
• 8-pin SO package.
APPLICATIONS
• Cellular and cordless phones PDAs and others
• Supply voltage source for low-voltage chip sets
• Portable computers
• Battery backup supplies
• Cameras.
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME
DESCRIPTION
plastic small outline package; 8 leads; body width 3.9 mm
VERSION
TEA1205AT
SO8
SOT96-1
1998 Mar 24
2
Philips Semiconductors
Preliminary specification
High efficiency DC/DC converter
TEA1205AT
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Supplies
VO
output voltage
VSEL = LOW
5.23
5.55
5.85
3.54
2.2
V
VSEL = HIGH
3.13
1.6
3.34
2.0
V
V
Vstart
start-up voltage
Efficiency; see Figs 6 and 7
η
efficiency
up from 2.4 to 3.3 V
up from 3.6 to 5.5 V
1 mA < IL < 1.0 A
1 mA < IL < 1.0 A
80
83
90
90
95
94
%
%
Current levels
Iq
quiescent current at pin 3
50
60
2
70
µA
µA
A
ISHDWN
IlimN
Ilx
shut-down current
−
10
NFET current limit
note 1
0.9 Ilim Ilim
1.1 Ilim
1.0
max. continuous current at pin 5
−
−
A
Power MOSFETS
RdsON(N) pin-to-pin resistance NFET
RdsON(P)
0.08
0.10
0.12
0.16
0.20
0.25
Ω
Ω
pin-to-pin resistance PFET
Timing
fsw
switching frequency
150
−
200
25
240
−
kHz
µs
tres
fsync
response time from standby to Pmax
synchronisation input frequency
−
13
−
MHz
Note
1. The NFET current limit is set by an external 1% accurate resistor Rlim connected between pin 7 and pin 6 (ground).
The typical maximum instantaneous current is defined as: Ilim = 890 V/ Rlim so the use of Rlim = 315 Ω will lead to a
typical maximum current value of 2.83 A. The average inductor current during current limit also depends on
inductance value and resistive losses in all components in the power path. In normal application and when using
Rlim = 315 Ω, the average inductor current will be limited to 2.3 A typical.
1998 Mar 24
3
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P-type POWER FET
5
3
4
LX
OUT
TEA1205AT
SENSE
START-UP
CIRCUIT
CONTROL LOGIC
AND
MODE GEARBOX
I/V
I
IimN
CONVERTER
TEMPERATURE
PROTECTION
TIME
COUNTER
BANDGAP
REFERENCE
ROM
20 MHz
OSCILLATOR
N-type
POWER
FET
DIGITAL CONTROLLER
sense
FET
6
7
1
2
8
MGM696
GND
VSEL
SYNC
SHDWN
ILIM
Fig.1 Block diagram.
Philips Semiconductors
Preliminary specification
High efficiency DC/DC converter
TEA1205AT
PINNING
SYMBOL
VSEL
PIN
DESCRIPTION
handbook, halfpage
1
2
3
4
5
6
7
8
output voltage selection input
synchronisation clock input
output voltage output
output voltage sense input
inductor connection
VSEL
SYNC
OUT
1
2
3
4
8
7
6
5
SHDWN
ILIM
SYNC
OUT
TEA1205AT
GND
LX
SENSE
LX
SENSE
MGM697
GND
ground
ILIM
current limit resistor connection
shut-down input
Fig.2 Pin configuration.
SHDWN
The ripple on top of the DC level is a result of the current
in the output capacitor, which changes in sign twice per
cycle, times the capacitor’s internal Equivalent Series
Resistance (ESR). After each ramp-down of the inductor
current, i.e. when the ESR effect increases the output
voltage, the converter determines what to do in the next
cycle. As soon as more load current is taken from the
output the output voltage starts to decay. When the output
voltage becomes lower than the low limit of the window,
a corrective action is taken by a ramp-up of the inductor
current during a much longer time. As a result, the DC
current level is increased and normal continuous
conduction mode can continue. The output voltage
(including ESR effect) is again within the predefined
window.
FUNCTIONAL DESCRIPTION
Control mechanism
The TEA1205AT DC/DC converter is able to operate in
discontinuous or continuous conduction operation.
All switching actions are completely determined by a
digital control circuit which uses the output voltage level as
its control input. This novel digital approach enables the
use of a new pulse width and frequency modulation
scheme, which ensures optimum power efficiency over the
complete range of operation of the converter. The scheme
works as follows. At low output power, a very small current
pulse is generated in the inductor, and the pulse rate
varies with a varying load. When the output voltage drops
below a specific limit, which indicates that the converter’s
current capability is not sufficient, the digital controller
switches to the next state of operation. The peak current in
the inductor is made higher, and the pulse rate can again
vary with a varying load. A third operation state is available
for again higher currents.
Figure 5 depicts the spread of the output voltage window.
The absolute value is most dependent on spread, while the
actual window size is not affected. For one specific device,
the output voltage will not vary more than 4%.
Start-up
When high output power is requested, the device starts
operating in continuous conduction mode. This results in
minimum AC currents in the circuit components and hence
optimum efficiency, cost, and EMC. In this mode, the
output voltage is allowed to vary between two predefined
voltage levels. As long as the output voltage stays within
this so-called window, switching continues in a fixed
pattern. When the output voltage reaches one of the
window borders, the digital controller immediately reacts
by adjusting the pulse width and inserting a current step in
such a way that the output voltage stays within the window
with higher or lower current capability. This approach
enables very fast reaction to load variations. Figure 3
shows the various coil current waveforms for low and high
current capability in each power conversion mode.
A possible deadlock situation in boost configuration can
occur after a sequence of disconnecting and reconnecting
the input voltage source. If, after disconnection of the input
source, the output voltage falls below 2.0 V, the device
may not restart properly after reconnection of the input
source, and may take continuous current from the input.
An external circuit to prevent the deadlock situation is
shown in Chapter “Application information”.
Shut-down
When the shut-down pin is made HIGH, the converter
disables both switches and power consumption is reduced
to a few µA.
Figure 4 shows the converter’s response to a sudden load
increase. The upper trace shows the output voltage.
1998 Mar 24
5
Philips Semiconductors
Preliminary specification
High efficiency DC/DC converter
TEA1205AT
Synchronisation function
Behaviour at input voltage exceeding the specified
range
In continuous conduction mode, the converter
switching frequency is synchronized to the signal at the
SYNC input, provided that this signal is present and its
frequency is 13 MHz. The switching frequency will than
be 26 times smaller than the applied input frequency at
the sync pin. If no sync signal is applied (Sync pin H
or L), the converter’s switching frequency will be
around 203 kHz, equally to behaviour at 13 MHz sync
input frequency, but with a larger tolerance. When this
function is not used, the SYNC pin must be tied to pin 3
or pin 6.
In general, an input voltage exceeding the specified range
is not recommended since instability may occur. However,
at an input voltage equal to or higher than the target output
voltage plus the diode voltage drop, but lower than 6 V, the
converter will stop switching and the external schottky
diode will take over, resulting in Vo equalling Vi minus the
diode voltage drop (see Fig.8).
handbook, halfpage
low power
mode
Power switches
The power switches in the IC are one N-type and one
P-type MOSFET, having a typical pin-to-pin resistance of
0.12 Ω and 0.16 Ω respectively. The maximum average
current in the switches is 1.0 A.
medium power
mode 1
Temperature protection
At too high device temperature (typical 165 °C), the
converter stops operating. It resumes operation when the
device temperature falls below 165 °C again. As a result,
low-frequent cycling between on and off state will occur.
It should be noted that in the event of device temperatures
around the cut-off limit, the application differs strongly from
maximum specifications.
increasing
medium power
load
mode 2
low DC current
high DC current
Current limit
If the current in the N-type power switch exceeds the limit
which is set by the value of the external resistor, current
ramping is stopped immediately, and the next switching
phase is entered. Current limitation is required to enable
optimal use of energy in Li-ion batteries, and to keep
power conversion efficient during temporary high loads.
Furthermore, current limitation protects the IC against
overload conditions, inductor saturation, etc.
MGK924
time
Fig.3 Coil current waveforms in the various power
modes.
1998 Mar 24
6
Philips Semiconductors
Preliminary specification
High efficiency DC/DC converter
TEA1205AT
load increase
start corrective action
V
o
high window limit
low window limit
time
I
L
MGK925
time
Fig.4 Response to load increase.
maximum positive spread
upper specification limit
5.85
V
h
V
o
(V)
+3%
4%
V
h
5.66
V
4%
l
−3%
−3%
V
+3%
h
5.44
5.23
V
l
4%
V
l
lower specification limit
typical situation
maximum negative spread
MGM698
Fig.5 Output voltage window position at typical, maximum and minimum specification.
7
1998 Mar 24
Philips Semiconductors
Preliminary specification
High efficiency DC/DC converter
TEA1205AT
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
voltage on any pin
CONDITIONS
shut-down mode
operational mode
MIN.
−0.2
MAX.
+6.5
UNIT
Vn
V
−0.2
−25
+5.9
V
Tj
junction temperature
+150
+80
°C
°C
°C
V
Tamb
Tstg
Ves
operating ambient temperature
storage temperature
−40
−65
+125
+3000
electrostatic handling
note 1
−3000
Note
1. Human body model: equivalent to discharging a 100 pF capacitor through a 1.5 kΩ series resistor.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth(j-a)
thermal resistance from junction to ambient in free air
150
K/W
QUALITY SPECIFICATION
In accordance with “SNW-FQ-611 part E”. The numbers of the quality specification can be found in the “Quality
Reference Handbook”. The handbook can be ordered using the code 9397 750 00192.
CHARACTERISTICS
Tj = −20 to +80 °C; all voltages with respect to ground; positive currents flow into the IC; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Supplies
VO
output voltage
VSEL = LOW
5.23
5.55
3.34
2.0
5.85
V
VSEL = HIGH
3.13
1.6
3.54
2.2
V
V
Vstart
start-up voltage
Efficiency
η
efficiency
up from 2.4 to 3.3 V
up from 3.6 to 5.5 V
1 mA < IL < 1.0 A
1 mA < IL < 1.0 A
80
83
90
90
95
94
%
%
Current levels
Iq
quiescent current at pin 3
50
60
2
70
µA
µA
A
ISHDWN
IlimN
Ilx
shut-down current
−
10
NFET current limit
note 1
0.9 Ilim
Ilim
−
1.1 Ilim
1.0
max. continuous current at pin 5
−
A
Power MOSFETS
RdsON(N) pin-to-pin resistance NFET
RdsON(P) pin-to-pin resistance PFET
0.08
0.10
0.12
0.16
0.20
0.25
Ω
Ω
1998 Mar 24
8
Philips Semiconductors
Preliminary specification
High efficiency DC/DC converter
TEA1205AT
SYMBOL
Timing
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
fsw
switching frequency
150
200
240
kHz
tres
response time from standby to
Pmax
−
25
−
µs
fsync
synchronisation input frequency
−
13
−
MHz
Temperature
Tamb
Tmax
operating ambient temperature
internal cut-off temperature
−20
+25
165
+80
180
°C
°C
150
Digital levels
VlL
LOW-level input voltage pins
0
−
0.4
V
1, 2, 7 and 8
VIH
VIH
VIH
HIGH-level input voltage pin 1
HIGH-level input voltage pin 2
HIGH-level input voltage pin 8
note 2
V3 − 0.4
2.0
−
−
−
V3 + 0.3 V
V3 + 0.3 V
V3 + 0.3 V
notes 2 and 3
notes 2 and 3
2.9
Sense pin resistance
RSENSE
SENSE pin resistance to GND up to 3.3 V mode
up to 5.0 V mode
437.2
662.2
546.5 655.8
827.8 993.4
kΩ
kΩ
Notes
1. The NFET current limit is set by an external 1% accurate resistor Rlim connected between pin 7 and pin 6 (ground).
The typical maximum instantaneous current is defined as: Ilim = 890 V/ Rlim so the use of Rlim = 315 Ω will lead to a
typical maximum current value of 2.83 A. The average inductor current during current limit also depends on
inductance value and resistive losses in all components in the power path. In normal application and when using
Rlim = 315 Ω, the average inductor current will be limited to 2.3 A typical.
2. V3 is the voltage at pin 3 (OUT).
3. If the applied high level is less than V3 − 1 V, the quiescent current level of the device will increase. The maximum
increase is 300 µA in the event that pin 2 is at 2.0 V.
1998 Mar 24
9
Philips Semiconductors
Preliminary specification
High efficiency DC/DC converter
TEA1205AT
MGM699
100
efficiency
(%)
PFM
PWM
90
80
70
60
50
40
10
−1
2
3
1
10
10
10
I
(mA)
L
Using a Coilcraft DO3308P 10 µH inductor and a Sprague 595D 330 µF capacitor.
The dotted line represents the Pulse Frequency Modulation (PFM) and the solid line the Pulse Width Modulation (PWM).
Fig.6 Efficiency as a function of load current IL (2.4 to 3.3 V).
MGM700
100
efficiency
(%)
PWM
90
80
70
60
50
40
PFM
−1
2
3
10
1
10
10
10
I
(mA)
L
Using a Coilcraft DO3308P 10 µH inductor and a Sprague 595D 330 µF capacitor.
The dotted line represents the Pulse Frequency Modulation (PFM) and the solid line the Pulse Width Modulation (PWM).
Fig.7 Efficiency as a function of load current IL (3.6 to 5.5 V).
1998 Mar 24
10
Philips Semiconductors
Preliminary specification
High efficiency DC/DC converter
TEA1205AT
APPLICATION INFORMATION
D1
V
OUT
O
L1
V
LX
SENSE
I
TEA1205AT
ILIM
GND
VSEL SYNC SHDWN
C2
C1
R
lim
MGM701
Fig.8 Complete application for upconversion.
A typical component choice for an upconverter from
3 NiCd cells or one Li-ion cell to 5.0 V in a GSM handset
(peak power 7.5 W, peak current 2.7 A) is (see Fig.8):
SHDWN pin. TR1, R1 and R2 should be omitted in that
case.
More application information can be found in the
associated application note.
• L1 = 10 µH; Isat > 2.3 A; low DC resistance, e.g.
Coilcraft DO3308-103
• C1 = 100 µF; low ESR capacitor; necessity depends on
type of input voltage source
• C2 = 330 µF; ESR = 0.1 Ω; e.g. Sprague 595D series
• D1; medium power Schottky diode; e.g. Philips
PRLL5819.
V
For lower power applications, the Isat and RDC values of
the inductor can be scaled back by the scaling factor of the
output current from the values above. The same holds for
the ESR value of the output capacitor. A further
improvement is increase of inductance and decrease of
output capacitance.
handbook, halfpage
O
R1
1 MΩ
SHDWN
R2
2.7 MΩ
V
TR1
I
An additional circuit to prevent start-up deadlock in
upconversion is shown in Fig.9. The function of TR1, R1
and R2 is to put the converter into shut-down mode when
the input source is suddenly disconnected. The circuit
operates as follows. When VI is present, TR1 conducts
and the SHDWN pin is kept LOW. As soon as VI falls below
1 V, TR1 no longer conducts and the device is put into
shut-down before VO falls below 2 V. In the event that a
signal is available which indicates the presence of the
input voltage source, this signal should be applied to the
MGK930
Fig.9 External deadlock prevention circuit.
1998 Mar 24
11
Philips Semiconductors
Preliminary specification
High efficiency DC/DC converter
TEA1205AT
PACKAGE OUTLINE
SO8: plastic small outline package; 8 leads; body width 3.9 mm
SOT96-1
D
E
A
X
c
y
H
v
M
A
E
Z
5
8
Q
A
2
A
(A )
3
A
1
pin 1 index
θ
L
p
L
1
4
e
w
M
detail X
b
p
0
2.5
5 mm
scale
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
A
(1)
(1)
(2)
UNIT
A
A
A
b
c
D
E
e
H
L
L
p
Q
v
w
y
Z
θ
1
2
3
p
E
max.
0.25
0.10
1.45
1.25
0.49
0.36
0.25
0.19
5.0
4.8
4.0
3.8
6.2
5.8
1.0
0.4
0.7
0.6
0.7
0.3
mm
1.27
0.050
1.05
0.041
1.75
0.25
0.01
0.25
0.01
0.25
0.1
8o
0o
0.010 0.057
0.004 0.049
0.019 0.0100 0.20
0.014 0.0075 0.19
0.16
0.15
0.244
0.228
0.039 0.028
0.016 0.024
0.028
0.012
inches 0.069
0.01 0.004
Notes
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
2. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
EIAJ
95-02-04
97-05-22
SOT96-1
076E03S
MS-012AA
1998 Mar 24
12
Philips Semiconductors
Preliminary specification
High efficiency DC/DC converter
TEA1205AT
SOLDERING
Introduction
Wave soldering
Wave soldering techniques can be used for all SO
packages if the following conditions are observed:
There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-hole and surface mounted components are mixed
on one printed-circuit board. However, wave soldering is
not always suitable for surface mounted ICs, or for
printed-circuits with high population densities. In these
situations reflow soldering is often used.
• A double-wave (a turbulent wave with high upward
pressure followed by a smooth laminar wave) soldering
technique should be used.
• The longitudinal axis of the package footprint must be
parallel to the solder flow.
• The package footprint must incorporate solder thieves at
the downstream end.
This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our “Data Handbook IC26; Integrated Circuit Packages”
(order code 9398 652 90011).
During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.
Reflow soldering
Reflow soldering techniques are suitable for all SO
packages.
Maximum permissible solder temperature is 260 °C, and
maximum duration of package immersion in solder is
10 seconds, if cooled to less than 150 °C within
Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.
6 seconds. Typical dwell time is 4 seconds at 250 °C.
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.
Several techniques exist for reflowing; for example,
thermal conduction by heated belt. Dwell times vary
between 50 and 300 seconds depending on heating
method. Typical reflow temperatures range from
215 to 250 °C.
Repairing soldered joints
Fix the component by first soldering two diagonally-
opposite end leads. Use only a low voltage soldering iron
(less than 24 V) applied to the flat part of the lead. Contact
time must be limited to 10 seconds at up to 300 °C. When
using a dedicated tool, all other leads can be soldered in
one operation within 2 to 5 seconds between
270 and 320 °C.
Preheating is necessary to dry the paste and evaporate
the binding agent. Preheating duration: 45 minutes at
45 °C.
1998 Mar 24
13
Philips Semiconductors
Preliminary specification
High efficiency DC/DC converter
TEA1205AT
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1998 Mar 24
14
Philips Semiconductors
Preliminary specification
High efficiency DC/DC converter
TEA1205AT
NOTES
1998 Mar 24
15
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Tel. +1 800 234 7381
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,
Tel. +7 095 755 6918, Fax. +7 095 755 6919
China/Hong Kong: 501 Hong Kong Industrial Technology Centre,
72 Tat Chee Avenue, Kowloon Tong, HONG KONG,
Tel. +852 2319 7888, Fax. +852 2319 7700
Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231,
Tel. +65 350 2538, Fax. +65 251 6500
Colombia: see South America
Czech Republic: see Austria
Slovakia: see Austria
Slovenia: see Italy
Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S,
Tel. +45 32 88 2636, Fax. +45 31 57 0044
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,
2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000,
Tel. +27 11 470 5911, Fax. +27 11 470 5494
Finland: Sinikalliontie 3, FIN-02630 ESPOO,
Tel. +358 9 615800, Fax. +358 9 61580920
South America: Al. Vicente Pinzon, 173, 6th floor,
04547-130 SÃO PAULO, SP, Brazil,
Tel. +55 11 821 2333, Fax. +55 11 821 2382
France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex,
Tel. +33 1 40 99 6161, Fax. +33 1 40 99 6427
Spain: Balmes 22, 08007 BARCELONA,
Tel. +34 3 301 6312, Fax. +34 3 301 4107
Germany: Hammerbrookstraße 69, D-20097 HAMBURG,
Tel. +49 40 23 53 60, Fax. +49 40 23 536 300
Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel. +46 8 632 2000, Fax. +46 8 632 2745
Greece: No. 15, 25th March Street, GR 17778 TAVROS/ATHENS,
Tel. +30 1 4894 339/239, Fax. +30 1 4814 240
Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. +41 1 488 2686, Fax. +41 1 488 3263
Hungary: see Austria
India: Philips INDIA Ltd, Band Box Building, 2nd floor,
254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025,
Tel. +91 22 493 8541, Fax. +91 22 493 0966
Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,
TAIPEI, Taiwan Tel. +886 2 2134 2865, Fax. +886 2 2134 2874
Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,
Tel. +66 2 745 4090, Fax. +66 2 398 0793
Indonesia: see Singapore
Ireland: Newstead, Clonskeagh, DUBLIN 14,
Tel. +353 1 7640 000, Fax. +353 1 7640 200
Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL,
Tel. +90 212 279 2770, Fax. +90 212 282 6707
Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,
TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007
Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461
Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3,
20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557
United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421
Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108,
Tel. +81 3 3740 5130, Fax. +81 3 3740 5077
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. +1 800 234 7381
Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,
Tel. +82 2 709 1412, Fax. +82 2 709 1415
Uruguay: see South America
Vietnam: see Singapore
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,
Tel. +60 3 750 5214, Fax. +60 3 757 4880
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
Tel. +381 11 625 344, Fax.+381 11 635 777
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,
Tel. +9-5 800 234 7381
Middle East: see Italy
For all other countries apply to: Philips Semiconductors,
Internet: http://www.semiconductors.philips.com
International Marketing & Sales Communications, Building BE-p, P.O. Box 218,
5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825
© Philips Electronics N.V. 1998
SCA57
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
415102/1200/01/pp16
Date of release: 1998 Mar 24
Document order number: 9397 750 03344
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