SA58632BS_技术文档

SA58632

2 × 2.2 W BTL audio ampliﬁer

Rev. 01 — 27 June 2006

Product data sheet

1. General description

The SA58632 is a two-channel audio ampliﬁer in an HVQFN20 package. It provides

power output of 2.2 W per channel with an 8 Ω load at 9 V supply. The internal circuit is

comprised of two BTL (Bridge-Tied Load) ampliﬁers with a complementary PNP-NPN

output stage and standby/mute logic. The SA58632 is housed in a 20-pin HVQFN

package, which has an exposed die attach paddle enabling reduced thermal resistance

and increased power dissipation.

2. Features

I Low junction-to-ambient thermal resistance using exposed die attach paddle

I Gain can be ﬁxed with external resistors from 6 dB to 30 dB

I Standby mode controlled by CMOS-compatible levels

I Low standby current < 10 µA

I No switch-on/switch-off plops

I High power supply ripple rejection: 50 dB minimum

I ElectroStatic Discharge (ESD) protection

I Output short circuit to ground protection

I Thermal shutdown protection

3. Applications

I Professional and amateur mobile radio

I Portable consumer products: toys and games

I Personal computer remote speakers

SA58632

Philips Semiconductors

2 × 2.2 W BTL audio ampliﬁer

4. Quick reference data

Table 1.

Quick reference data

V_CC= 6 V; T_amb= 25 °C; R_L= 8 Ω; V_MODE= 0 V; measured in test circuit Figure 3; unless otherwise

speciﬁed.

Symbol Parameter

Conditions

operating

Min

2.2

-

Typ

9

Max

18

22

10

-

Unit

V

V_CC

I_q

supply voltage

quiescent current

standby current

output power

[1]

R_L= ∞ Ω

15

-

mA

µA

W

I_stb

P_o

V_MODE= V_CC

THD+N = 10 %

THD+N = 0.5 %

-

1.2

0.9

-

1.5

1.1

2.2

-

W

THD+N = 10 %;

V_CC= 9 V

-

W

THD+N

PSRR

total harmonic

distortion-plus-noise

P_o= 0.5 W

-

0.15

0.3

%

[2]

[3]

power supply rejection ratio

50

40

-

dB

[1] With a load connected at the outputs the quiescent current will increase, the maximum of this increase

being equal to the DC output offset voltage divided by R_L.

[2] Supply voltage ripple rejection is measured at the output with a source impedance of R_s= 0 Ω at the input.

The ripple voltage is a sine wave with a frequency of 1 kHz and an amplitude of 100 mV (RMS), which is

applied to the positive supply rail.

[3] Supply voltage ripple rejection is measured at the output, with a source impedance of R_s= 0 Ω at the input.

The ripple voltage is a sine wave with a frequency between 100 Hz and 20 kHz and an amplitude of

100 mV (RMS), which is applied to the positive supply rail.

5. Ordering information

Table 2.

Ordering information

Type number Package

Name

Description

Version

SA58632BS HVQFN20 plastic thermal enhanced very thin quad ﬂat package;

SOT910-1

no leads; 20 terminals; body 6 × 5 × 0.85 mm

SA58632_1

Product data sheet

Rev. 01 — 27 June 2006

2 of 26

SA58632

Philips Semiconductors

2 × 2.2 W BTL audio ampliﬁer

6. Block diagram

V

CCR

CCL

17

10

SA58632

16

15

14

INL−

INL+

OUTL−

R

V

CCL

R

20 kΩ

1

OUTL+

20 kΩ

STANDBY/MUTE LOGIC

11

12

13

INR−

INR+

OUTR−

R

V

CCR

R

20 kΩ

6

OUTR+

3

SVR

20 kΩ

2

4

MODE

BTL/SE

STANDBY/MUTE LOGIC

5

8

9

19

18

20

7

n.c.

GND GND GND GND LGND RGND

002aac078

Fig 1. Block diagram of SA58632

SA58632_1

Product data sheet

Rev. 01 — 27 June 2006

3 of 26

SA58632

Philips Semiconductors

2 × 2.2 W BTL audio ampliﬁer

7. Pinning information

7.1 Pinning

terminal 1

index area

OUTL+

MODE

SVR

1

2

3

4

5

6

16 OUTL−

15 INL−

14 INL+

13 INR+

12 INR−

11 OUTR−

SA58632BS

BTL/SE

n.c.

OUTR+

002aac079

Transparent top view

Fig 2. Pin conﬁguration for HVQFN20

7.2 Pin description

Table 3.

Symbol

Pin description

Description

OUTL+

MODE

SVR

1

positive loudspeaker terminal, left channel

operating mode select (standby, mute, operating)

half supply voltage, decoupling ripple rejection

BTL loudspeaker or SE headphone operation

not connected

2

3

BTL/SE

n.c.

4

5

OUTR+

RGND

GND

6

positive loudspeaker terminal, right channel

7

ground, right channel

ground^[1]

8, 9, 18, 19

V_CCR

10

11

12

13

14

15

16

17

20

supply voltage; right channel

OUTR−

INR−

negative loudspeaker terminal, right channel

negative input, right channel

INR+

positive input, right channel

INL+

positive input, left channel

INL−

negative input, left channel

OUTL−

V_CCL

negative output terminal, left channel

supply voltage, left channel

LGND

ground, left channel

[1] Pins 8, 9, 18 and 19 are connected to the lead frame and also to the substrate. They may be kept ﬂoating.

When connected to the ground plane, the PCB can be used as heatsink.

SA58632_1

Product data sheet

Rev. 01 — 27 June 2006

4 of 26

SA58632

Philips Semiconductors

2 × 2.2 W BTL audio ampliﬁer

8. Functional description

The SA58632 is a two-channel BTL audio ampliﬁer capable of delivering 2 × 1.5 W output

power to an 8 Ω load at THD+N = 10 % using a 6 V power supply. It is also capable of

delivering 2 × 2.2 W output power to an 8 Ω load at THD+N = 10 % using a 9 V power

supply. Using the MODE pin, the device can be switched to standby and mute condition.

The device is protected by an internal thermal shutdown protection mechanism. The gain

can be set within a range of 6 dB to 30 dB by external feedback resistors.

8.1 Power ampliﬁer

The power ampliﬁer is a Bridge-Tied Load (BTL) ampliﬁer with a complementary

PNP-NPN output stage. The voltage loss on the positive supply line is the saturation

voltage of a PNP power transistor, on the negative side the saturation voltage of an NPN

power transistor. The total voltage loss is < 1 V. With a supply voltage of 6 V and an 8 Ω

loudspeaker, an output power of 1.5 W can be delivered to the load, and with a 9 V supply

voltage and an 8 Ω loudspeaker an output power of 2.2 W can be delivered.

8.2 Mode select pin (MODE)

The device is in Standby mode (with a very low current consumption) if the voltage at the

MODE pin is greater than V_CC− 0.5 V, or if this pin is ﬂoating. At a MODE voltage in the

range between 1.5 V and V_CC− 1.5 V the ampliﬁer is in a mute condition. The mute

condition is useful to suppress plop noise at the output, caused by charging of the input

capacitor. The device is in Active mode if the MODE pin is grounded or less than 0.5 V

(see Figure 6).

8.3 BTL/SE output conﬁguration

To invoke the BTL conﬁguration (see Figure 3), the BTL/SE pin is taken to logic HIGH or

not connected. The output differentially drives the speakers, so there is no need for

coupling capacitors. The headphone can be connected to the ampliﬁer negative outputs

using a coupling capacitor for each channel. The headphone common ground is

connected to the ampliﬁer ground.

To invoke the Single-Ended (SE) conﬁguration (see Figure 15), the BTL/SE pin is taken to

logic LOW or connected to ground. The positive outputs are muted with a DC level of

0.5V_CC. Using a coupling capacitor for each channel, speakers can be connected to the

ampliﬁer negative outputs. The speaker common ground is connected to the ampliﬁer

ground. Headphones can be connected to the negative outputs without using output

coupling capacitors. The headphone common ground pin is connected to one of the

ampliﬁer positive output pins.

SA58632_1

Product data sheet

Rev. 01 — 27 June 2006

5 of 26

SA58632

Philips Semiconductors

2 × 2.2 W BTL audio ampliﬁer

9. Limiting values

Table 4.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter

Conditions

Min

−0.3

-

Max

+18

Unit

V

V_CC

V_I

supply voltage

operating

input voltage

V_CC+ 0.3

1

V

I_ORM

T_stg

T_amb

V_P(sc)

P_tot

repetitive peak output current

storage temperature

ambient temperature

short-circuit supply voltage

total power dissipation

A

non-operating

operating

−55

−40

-

+150

+85

°C

V

10

HVQFN20

-

2.2

W

10. Thermal characteristics

Table 5.

Thermal characteristics

Symbol Parameter

Conditions

Typ

Unit

R_th(j-a)

thermal resistance from junction to ambient

in free air

80

22

3

K/W

64.5 mm²(10 square inch) heat spreader

[1]

R_th(j-sp)

thermal resistance from junction to solder

point

[1] Thermal resistance is 22 K/W with DAP soldered to 64.5 mm²(10 square inch), 1 ounce copper heat spreader.

11. Static characteristics

Table 6.

Static characteristics

V_CC= 6 V; T_amb= 25 °C; R_L= 8 Ω; V_MODE= 0 V; measured in test circuit Figure 3; unless otherwise speciﬁed.

Symbol

V_CC

Parameter

Conditions

operating

Min

Typ

Max

18

Unit

V

supply voltage

2.2

9

[1]

[2]

I_q

quiescent current

standby current

R_L= ∞ Ω

-

15

22

mA

µA

V

I_stb

V_MODE= V_CC

-

10

V_O

output voltage

-

2.2

-

∆V_O(offset)

I_IB

differential output voltage offset

input bias current

-

50

mV

nA

V

pins INL+, INR+

pins INL−, INR−

operating

-

500

0.5

-

V_MODE

voltage on pin MODE

0

mute

1.5

V_CC− 1.5

V

standby

V

-

_CC− 0.5

V_CC

20

V

I_MODE

V_I(SE)

V_I(BTL)

I_I(SE)

current on pin MODE

0 V < V_MODE< V_CC

single-ended (SE)

BTL

µA

V

input voltage on pin BTL/SE

input current on pin BTL/SE

0

2

-

0.6

V_CC

100

V

V_I(SE)= 0 V; pin connected

to ground in SE mode

µA

SA58632_1

Product data sheet

Rev. 01 — 27 June 2006

6 of 26

SA58632

Philips Semiconductors

2 × 2.2 W BTL audio ampliﬁer

[1] With a load connected at the outputs the quiescent current will increase, the maximum of this increase being equal to the DC output

offset voltage divided by R_L.

[2] The DC output voltage with respect to ground is approximately 0.5 × V_CC

.

12. Dynamic characteristics

Table 7.

Dynamic characteristics

V_CC= 6 V; T_amb= 25 °C; R_L= 8 Ω; f = 1 kHz; V_MODE= 0 V; measured in test circuit Figure 3; unless otherwise speciﬁed.

Symbol

Parameter

Conditions

Min

1.2

0.9

-

Typ

1.5

1.1

2.2

Max

Unit

W

P_o

output power

THD+N = 10 %

THD+N = 0.5 %

-

W

THD+N = 10 %; V_CC= 9 V;

application demo board

W

THD+N

total harmonic

P_o= 0.5 W

-

0.15

0.3

%

distortion-plus-noise

[1]

G_v(cl)

∆Z_i

closed-loop voltage gain

differential input impedance

noise output voltage

6

-

30

dB

kΩ

µV

dB

µV

dB

-

100

-

[2]

[3]

[4]

[5]

V_n(o)

PSRR

-

100

power supply rejection ratio

50

40

-

V_O(mute)

mute output voltage

channel separation

mute condition

200

-

α_cs

40

[1] Gain of the ampliﬁer is 2 × (R2 / R1) in test circuit of Figure 3.

[2] The noise output voltage is measured at the output in a frequency range from 20 Hz to 20 kHz (unweighted), with a source impedance

of R_s= 0 Ω at the input.

[3] Supply voltage ripple rejection is measured at the output with a source impedance of R_s= 0 Ω at the input. The ripple voltage is a

sine wave with a frequency of 1 kHz and an amplitude of 100 mV (RMS), which is applied to the positive supply rail.

[4] Supply voltage ripple rejection is measured at the output, with a source impedance of R_s= 0 Ω at the input. The ripple voltage is a

sine wave with a frequency between 100 Hz and 20 kHz and an amplitude of 100 mV (RMS), which is applied to the positive supply rail.

[5] Output voltage in mute position is measured with an input voltage of 1 V (RMS) in a bandwidth of 20 kHz, which includes noise.

SA58632_1

Product data sheet

Rev. 01 — 27 June 2006

7 of 26

SA58632

Philips Semiconductors

2 × 2.2 W BTL audio ampliﬁer

13. Application information

13.1 BTL application

T_amb= 25 °C, V_CC= 9 V, f = 1 kHz, R_L= 8 Ω, G_v= 20 dB, audio band-pass 22 Hz to

22 kHz. The BTL diagram is shown in Figure 3.

V

R2

CC

50 kΩ

100 nF

100 µF

1 µF

R1

INL−

17

10

15

14

10 kΩ

OUTL−

16

1

INL+

V

IL

C3

47 µF

R

L

OUTL+

OUTR−

R4

50 kΩ

SA58632

1 µF

R3

10 kΩ

INR−

INR+

12

13

3

OUTR−

11

6

V

IR

SVR

R

L

MODE

BTL/SE

OUTR+

2

4

20

7

GND

002aac080

R2

Gain left = 2 ×

------

R1

R4

------

R3

Gain right = 2 ×

Pins 8, 9, 18 and 19 connected to ground.

Fig 3. Application diagram of SA58632 BTL differential output conﬁguration

SA58632_1

Product data sheet

Rev. 01 — 27 June 2006

8 of 26

SA58632

Philips Semiconductors

2 × 2.2 W BTL audio ampliﬁer

14. Test information

14.1 Static characterization

The quiescent current has been measured without any load impedance (Figure 4).

Figure 6 shows three areas: operating, mute and standby. It shows that the DC switching

levels of the mute and standby respectively depends on the supply voltage level.

002aac081

002aac089

30

10

(V)

V

O

I

q

1

(mA)

−1

10

20

−2

−3

−4

−5

−6

(1) (2) (3)

10

0

−1

2

0

4

8

12

16

V

20

(V)

10

1

10

V

(V)

MODE

CC

R_L= ∞ Ω

Band-pass = 22 Hz to 22 kHz.

(1) V_CC= 3 V.

(2) V_CC= 5 V.

(3) V_CC= 12 V.

Fig 4. I_qversus V_CC

Fig 5. V_Oversus V_MODE

002aac090

16

V

MODE

(V)

12

8

standby

mute

4

operating

0

4

8

12

16

V

(V)

CC

Fig 6. V_MODEversus V_CC

SA58632_1

Product data sheet

Rev. 01 — 27 June 2006

9 of 26

SA58632

Philips Semiconductors

2 × 2.2 W BTL audio ampliﬁer

14.2 BTL dynamic characterization

The total harmonic distortion-plus-noise (THD+N) as a function of frequency (Figure 7)

was measured with a low-pass ﬁlter of 80 kHz. The value of capacitor C2 inﬂuences the

behavior of PSRR at low frequencies; increasing the value of C2 increases the

performance of PSRR.

002aac083

002aac084

10

THD+N

−60

α

cs

(dB)

(1)

(2)

(%)

−70

1

(1)

(2)

−80

−90

(3)

−1

10

−2

10

−100

2

3

4

5

2

3

4

5

10

f (Hz)

P_o= 0.5 W; G_v= 20 dB.

V_CC= 6 V; V_O= 2 V; R_L= 8 Ω.

(1) G_v= 30 dB.

(1) V_CC= 6 V; R_L= 8 Ω.

(2) V_CC= 7.5 V; R_L= 16 Ω.

(2) G_v= 20 dB.

(3) G_v= 6 dB.

Fig 7. THD+N versus frequency

Fig 8. Channel separation versus frequency

002aac085

−20

PSRR

(dB)

(1)

(2)

−40

−60

−80

(3)

2

3

4

5

10

f (Hz)

V_CC= 6 V; R_s= 0 Ω; V_ripple= 100 mV.

(1) G_v= 30 dB.

(2) G_v= 20 dB.

(3) G_v= 6 dB.

Fig 9. PSRR versus frequency

SA58632_1

Product data sheet

Rev. 01 — 27 June 2006

10 of 26

SA58632

Philips Semiconductors

2 × 2.2 W BTL audio ampliﬁer

14.3 Thermal behavior

The measured thermal performance of the HVQFN20 package is highly dependent on the

conﬁguration and size of the heat spreader on the application demo board. Data may not

be comparable between different semiconductors manufacturers because the application

demo boards and test methods are not standardized. Also, the thermal performance of

packages for a speciﬁc application may be different than presented here, because of the

conﬁguration of the copper heat spreader of the application boards may be signiﬁcantly

different.

Philips Semiconductors uses FR-4 type application boards with 1 ounce copper traces

with solder coating.

The demo board (see Figure 23) has a 1 ounce copper heat spreader that runs under the

IC and provides a mounting pad to solder to the die attach paddle of the HVQFN20

package. The heat spreader is symmetrical and provides a heat spreader on both top and

bottom of the PCB. The heat spreader on top and bottom side of the demo board is

connected through 2 mm diameter plated through holes. Directly under the DAP (Die

Attach Paddle), the top and bottom side of the PCB are connected by four vias. The total

top and bottom heat spreader area is 64.5 mm²(10 in²).

The junction to ambient thermal resistance, R_th(j-a)= 22 K/W for the HVQFN20 package

when the exposed die attach paddle is soldered to 5 square inch area of 1 ounce copper

heat spreader on the demo PCB. The maximum sine wave power dissipation for

T_amb= 25 °C is:

150 – 25

= 5.7 W

--------------------

22

Thus, for T_amb= 60 °C the maximum total power dissipation is:

150 – 60

= 4.1 W

--------------------

22

The power dissipation versus ambient temperature curve (Figure 10) shows the power

derating proﬁles with ambient temperature for three sizes of heat spreaders. For a more

modest heat spreader using 5 square inch area on the top or bottom side of the PCB, the

R_th(j-a)is 31 K/W. When the package is not soldered to a heat spreader, the R_th(j-a)

increases to 60 K/W.

SA58632_1

Product data sheet

Rev. 01 — 27 June 2006

11 of 26

SA58632

Philips Semiconductors

2 × 2.2 W BTL audio ampliﬁer

002aac283

6

4

2

0

(1)

(2)

P

(W)

(3)

0

40

80

120

160

(°C)

T

amb

(1) 64.5 mm²heat spreader top and bottom (1 ounce copper).

(2) 32.3 mm²heat spreader top or bottom (1 ounce copper).

(3) No heat spreader.

Fig 10. Power dissipation versus ambient temperature

The characteristics curves (Figure 11a and Figure 11b, Figure 12, Figure 13a and

Figure 13b, and Figure 14) show the room temperature performance for SA58632 using

the demo PCB shown in Figure 23. For example, Figure 11 “Power dissipation versus

output power” (a and b) show the performance as a function of load resistance and supply

voltage. Worst case power dissipation is shown in Figure 12. Figure 13a shows that the

part delivers typically 2.8 W per channel for THD+N = 10 % using 8 Ω load at 9 V supply,

while Figure 13b shows that the part delivers 3.3 W per channel at 12 V supply and 16 Ω

load, THD+N = 10 %.

SA58632_1

Product data sheet

Rev. 01 — 27 June 2006

12 of 26

SA58632

Philips Semiconductors

2 × 2.2 W BTL audio ampliﬁer

002aac288

002aac289

3

2

1

0

(4)

P

(W)

P

(W)

(3)

2

(2)

(3)

(2)

1

(1)

0

1

2

3

0

1

2

3

4

P

(W)

P (W)

o

(1) V_CC= 6 V.

(2) V_CC= 7.5 V.

(3) V_CC= 9 V.

(1) V_CC= 6 V.

(2) V_CC= 7.5 V.

(3) V_CC= 9 V.

(4) V_CC= 12 V.

a. R_L= 8 Ω; f = 1 kHz; G_v= 20 dB

b. R_L= 16 Ω; f = 1 kHz; G_v= 20 dB

Fig 11. Power dissipation versus output power

002aac287

4

P

o

(W)

3

2

1

0

(1)

(2)

(3)

0

4

8

12

V

(V)

CC

(1) R_L= 4 Ω.

(2) R_L= 8 Ω.

(3) R_L= 16 Ω.

Fig 12. Worst case power dissipation versus V_CC

SA58632_1

Product data sheet

Rev. 01 — 27 June 2006

13 of 26

SA58632

Philips Semiconductors

2 × 2.2 W BTL audio ampliﬁer

002aac284

002aac285

2

10

THD+N

(%)

THD+N

(%)

(1) (2) (3) (4)

10

1

(1)

(2)

(3)

1

−2

10

−3

10

−2

−3

−2

10

1

10

1

10

P

(W)

P (W)

o

(1) V_CC= 6 V.

(2) V_CC= 7.5 V.

(3) V_CC= 9 V.

(1) V_CC= 6 V.

(2) V_CC= 7.5 V.

(3) V_CC= 9 V.

(4) V_CC= 12 V.

a. R_L= 8 Ω; f = 1 kHz; G_v= 20 dB

b. R_L= 16 Ω; f = 1 kHz; G_v= 20 dB

Fig 13. THD+N versus output power

002aac286

4

P

o

(W)

(3)

3

(2)

2

1

0

(1)

0

4

8

12

V

(V)

CC

THD+N = 10 %; f = 1 kHz; G_v= 20 dB.

(1) R_L= 4 Ω.

(2) R_L= 8 Ω.

(3) R_L= 16 Ω.

Fig 14. Output power versus V_CC

SA58632_1

Product data sheet

Rev. 01 — 27 June 2006

14 of 26

SA58632

Philips Semiconductors

2 × 2.2 W BTL audio ampliﬁer

14.4 Single-ended application

T_amb= 25 °C; V_CC= 7.5 V; f = 1 kHz; R_L= 8 Ω; G_v= 20 dB; audio band-pass 20 Hz to

20 kHz.

The single-ended application diagram is shown in Figure 15.

V

R2

CC

100 kΩ

100 nF

100 µF

1 µF

R1

INL−

17

10

15

14

C4

10 kΩ

OUTL−

16

1

INL+

V

470 µF

IL

C3

47 µF

R

L

= 8 Ω

OUTL+

OUTR−

R4

100 kΩ

SA58632

1 µF

R3

10 kΩ

INR−

INR+

12

13

3

C5

OUTR−

11

6

V

470 µF

IR

SVR

R

L

= 8 Ω

MODE

BTL/SE

OUTR+

2

4

20

7

GND

002aac091

R2

------

R1

Gain left =

R4

Gain right =

------

R3

Pins 8, 9, 18 and 19 connected to ground.

Fig 15. SE application circuit conﬁguration

If the BTL/SE pin is to ground, the positive outputs (OUTL+, OUTR+) will be in mute

condition with a DC level of 0.5V_CC. When a headphone is used (R_L> 25 Ω) the SE

headphone application can be used without coupling capacitors by placing the load

between negative output and one of the positive outputs (for example, pin 1) as the

common pin.

Increasing the value of the tantalum or electrolytic capacitor C3 will result in a better

channel separation. Because the positive output is not designed for high output current

(2 × I_O) at the load impedance (< 16 Ω), the SE application with output capacitors

connected to ground is advised. The capacitor value of C4/C5 in combination with the

load impedance determines the low frequency behavior. The total harmonic

distortion-plus-noise as a function of frequency was measured with a low-pass ﬁlter of

80 kHz. The value of the capacitor C3 inﬂuences the behavior of the PSRR at low

frequencies; increasing the value of C3 increases the performance of PSRR.

SA58632_1

Product data sheet

Rev. 01 — 27 June 2006

15 of 26

SA58632

Philips Semiconductors

2 × 2.2 W BTL audio ampliﬁer

002aac290

002aac291

2

10

THD+N

(%)

THD+N

(%)

(1) (2) (3)

10

1

(1) (2)

(3)

1

−1

10

−1

10

−2

10

−2

−1

−2

−1

10

1

10

1

10

P

(W)

P (W)

o

(1) V_CC= 7.5 V.

(2) V_CC= 9 V.

(3) V_CC= 12 V.

(1) V_CC= 9 V.

(2) V_CC= 12 V.

(3) V_CC= 15 V.

a. R_L= 4 Ω; f = 1 kHz; G_v= 10 dB

b. R_L= 8 Ω; f = 1 kHz; G_v= 10 dB

002aac292

2

10

THD+N

(%)

(1) (2) (3)

10

1

−1

10

−2

10

−2

−1

10

1

10

P

(W)

o

(1) V_CC= 9 V.

(2) V_CC= 12 V.

(3) V_CC= 15 V.

c. R_L= 16 Ω; f = 1 kHz; G_v= 10 dB

Fig 16. THD+N versus output power

SA58632_1

Product data sheet

Rev. 01 — 27 June 2006

16 of 26

SA58632

Philips Semiconductors

2 × 2.2 W BTL audio ampliﬁer

002aac093

002aac094

10

−20

α

(dB)

cs

THD+N

(%)

(1)

(2)

−40

1

−60

−80

−1

(1)

(2)

10

(3)

(4)

(5)

(3)

2

−2

−100

3

4

5

2

3

4

5

10

f (Hz)

P_o= 0.5 W; G_v= 20 dB.

V_o= 1 V; G_v= 20 dB.

(1) V_CC= 7.5 V; R_L= 4 Ω.

(2) V_CC= 9 V; R_L= 8 Ω.

(3) V_CC= 12 V; R_L= 16 Ω.

(1) V_CC= 5 V; R_L= 32 Ω, to buffer.

(2) V_CC= 7.5 V; R_L= 4 Ω.

(3) V_CC= 9 V; R_L= 8 Ω.

(4) V_CC= 12 V; R_L= 16 Ω.

(5) V_CC= 5 V; R_L= 32 Ω.

Fig 17. THD+N versus frequency

Fig 18. Channel separation versus frequency

002aac095

002aac096

−20

2.0

P

o

PSRR

(dB)

(W)

1.6

−40

(1)

(2)

(3)

1.2

0.8

0.4

0

(1)

(2)

−60

(3)

−80

2

3

4

5

10

0

4

8

12

16

f (Hz)

V

CC

(V)

R_s= 0 Ω; V_ripple= 100 mV.

(1) G_v= 24 dB.

THD+N = 10 %.

(1) R_L= 4 Ω.

(2) G_v= 20 dB.

(3) G_v= 0 dB.

(2) R_L= 8 Ω.

(3) R_L= 16 Ω.

Fig 19. PSRR versus frequency

Fig 20. P_oversus V_CC

SA58632_1

Product data sheet

Rev. 01 — 27 June 2006

17 of 26

SA58632

Philips Semiconductors

2 × 2.2 W BTL audio ampliﬁer

002aac097

(2)

4

3

2

1

0

P

(W)

(1)

(3)

0

4

8

12

16

V

CC

(V)

THD+N = 10 %.

(1) R_L= 4 Ω.

(2) R_L= 8 Ω.

(3) R_L= 16 Ω.

Fig 21. Worst case power dissipation versus V_CC

SA58632_1

Product data sheet

Rev. 01 — 27 June 2006

18 of 26

SA58632

Philips Semiconductors

2 × 2.2 W BTL audio ampliﬁer

002aac293

002aac294

3

2

1

0

P

(W)

P

(W)

(3)

2

(2)

(1)

1

0

0.4

0.8

1.2

1.6

0

0.8

1.6

2.4

P

(W)

P (W)

o

(1) V_CC= 7.5 V.

(2) V_CC= 9 V.

(3) V_CC= 12 V.

(1) V_CC= 9 V.

(2) V_CC= 12 V.

(3) V_CC= 15 V.

a. R_L= 4 Ω; f = 1 kHz; G_v= 10 dB

b. R_L= 8 Ω; f = 1 kHz; G_v= 10 dB

002aac295

1.6

P

(W)

(3)

1.2

0.8

0.4

0

(2)

(1)

0

0.4

0.8

1.2

1.6

P

(W)

o

(1) V_CC= 9 V.

(2) V_CC= 12 V.

(3) V_CC= 15 V.

c. R_L= 16 Ω; f = 1 kHz; G_v= 10 dB

Fig 22. Power dissipation versus output power

14.5 General remarks

The frequency characteristics can be adapted by connecting a small capacitor across the

feedback resistor. To improve the immunity of HF radiation in radio circuit applications, a

small capacitor can be connected in parallel with the feedback resistor (56 kΩ); this

creates a low-pass ﬁlter.

14.6 SA58632BS PCB demo

The application demo board may be used for evaluation in either BTL or SE conﬁguration

as shown in the schematics in Figure 3 and Figure 15. The demo PCB is laid out for a

64.5 mm²(10 in²) heat spreader (total of top and bottom heat spreader area).

SA58632_1

Product data sheet

Rev. 01 — 27 June 2006

19 of 26

SA58632

Philips Semiconductors

2 × 2.2 W BTL audio ampliﬁer

15. Package outline

HVQFN20: plastic thermal enhanced very thin quad flat package; no leads;

20 terminals; body 6 x 5 x 0.85 mm

SOT910-1

D

B

A

terminal 1

index area

E

A

1

c

detail X

e

1

1/2 e

C

y

M

v

C A

B

e

b

y

C

1

w

C

7

10

L

6

11

e

E

e

2

h

1/2 e

1

16

terminal 1

index area

20

17

X

D

h

0

2.5

5 mm

scale

DIMENSIONS (mm are the original dimensions)

A

UNIT

A

1

b

c

D

h

E

e

1

e

2

L

v

w

y

1

h

max

0.05

0.00

0.4

0.3

5.1

4.9

3.15

2.85

6.1

5.9

4.15

3.85

0.65

0.40

mm

1

0.2

0.8

2.4

4

0.1

0.05 0.05

0.1

Note

1. Plastic or metal protrusions of 0.25 mm maximum per side are not included

REFERENCES

OUTLINE

VERSION

EUROPEAN

PROJECTION

ISSUE DATE

IEC

JEDEC

MO-220

JEITA

SOT910-1

- - -

05-10-11

Fig 24. Package outline SOT910-1 (HVQFN20)

SA58632_1

Product data sheet

Rev. 01 — 27 June 2006

21 of 26

SA58632

Philips Semiconductors

2 × 2.2 W BTL audio ampliﬁer

16. Soldering

16.1 Introduction to soldering surface mount packages

There is no soldering method that is ideal for all surface mount IC packages. Wave

soldering can still be used for certain surface mount ICs, but it is not suitable for ﬁne pitch

SMDs. In these situations reﬂow soldering is recommended.

16.2 Reﬂow soldering

Reﬂow soldering requires solder paste (a suspension of ﬁne solder particles, ﬂux and

binding agent) to be applied to the printed-circuit board by screen printing, stencilling or

pressure-syringe dispensing before package placement. Driven by legislation and

environmental forces the worldwide use of lead-free solder pastes is increasing.

Several methods exist for reﬂowing; for example, convection or convection/infrared

heating in a conveyor type oven. Throughput times (preheating, soldering and cooling)

vary between 100 seconds and 200 seconds depending on heating method.

Typical reﬂow temperatures range from 215 °C to 260 °C depending on solder paste

material. The peak top-surface temperature of the packages should be kept below:

Table 8.

SnPb eutectic process - package peak reﬂow temperatures (from J-STD-020C

July 2004)

Package thickness

< 2.5 mm

Volume mm³< 350

240 °C + 0/−5 °C

225 °C + 0/−5 °C

Volume mm³≥ 350

225 °C + 0/−5 °C

≥ 2.5 mm

Table 9.

Pb-free process - package peak reﬂow temperatures (from J-STD-020C July

2004)

Package thickness

Volume mm³< 350

Volume mm³350 to

2000

Volume mm³> 2000

< 1.6 mm

260 °C + 0 °C

250 °C + 0 °C

260 °C + 0 °C

250 °C + 0 °C

245 °C + 0 °C

260 °C + 0 °C

245 °C + 0 °C

1.6 mm to 2.5 mm

≥ 2.5 mm

Moisture sensitivity precautions, as indicated on packing, must be respected at all times.

16.3 Wave soldering

Conventional single wave soldering is not recommended for surface mount devices

(SMDs) or printed-circuit boards with a high component density, as solder bridging and

non-wetting can present major problems.

To overcome these problems the double-wave soldering method was speciﬁcally

developed.

If wave soldering is used the following conditions must be observed for optimal results:

• Use a double-wave soldering method comprising a turbulent wave with high upward

pressure followed by a smooth laminar wave.

• For packages with leads on two sides and a pitch (e):

SA58632_1

Product data sheet

Rev. 01 — 27 June 2006

22 of 26

SA58632

Philips Semiconductors

2 × 2.2 W BTL audio ampliﬁer

– larger than or equal to 1.27 mm, the footprint longitudinal axis is preferred to be

parallel to the transport direction of the printed-circuit board;

– smaller than 1.27 mm, the footprint longitudinal axis must be parallel to the

transport direction of the printed-circuit board.

The footprint must incorporate solder thieves at the downstream end.

• For packages with leads on four sides, the footprint must be placed at a 45° angle to

the transport direction of the printed-circuit board. The footprint must incorporate

solder thieves downstream and at the side corners.

During placement and before soldering, the package must be ﬁxed with a droplet of

adhesive. The adhesive can be applied by screen printing, pin transfer or syringe

dispensing. The package can be soldered after the adhesive is cured.

Typical dwell time of the leads in the wave ranges from 3 seconds to 4 seconds at 250 °C

or 265 °C, depending on solder material applied, SnPb or Pb-free respectively.

A mildly-activated ﬂux will eliminate the need for removal of corrosive residues in most

applications.

16.4 Manual soldering

Fix the component by ﬁrst soldering two diagonally-opposite end leads. Use a low voltage

(24 V or less) soldering iron applied to the ﬂat part of the lead. Contact time must be

limited to 10 seconds at up to 300 °C.

When using a dedicated tool, all other leads can be soldered in one operation within

2 seconds to 5 seconds between 270 °C and 320 °C.

16.5 Package related soldering information

Table 10. Suitability of surface mount IC packages for wave and reﬂow soldering methods

Package^[1]

Soldering method

Wave

Reﬂow^[2]

BGA, HTSSON..T^[3], LBGA, LFBGA, SQFP,

SSOP..T^[3], TFBGA, VFBGA, XSON

not suitable

suitable

DHVQFN, HBCC, HBGA, HLQFP, HSO, HSOP,

HSQFP, HSSON, HTQFP, HTSSOP, HVQFN,

HVSON, SMS

not suitable^[4]

suitable

PLCC^[5], SO, SOJ

suitable

LQFP, QFP, TQFP

not recommended^[5][6]

not recommended^[7]

not suitable

suitable

SSOP, TSSOP, VSO, VSSOP

CWQCCN..L^[8], PMFP^[9], WQCCN..L^[8]

suitable

not suitable

[1] For more detailed information on the BGA packages refer to the (LF)BGA Application Note (AN01026);

order a copy from your Philips Semiconductors sales ofﬁce.

[2] All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the

maximum temperature (with respect to time) and body size of the package, there is a risk that internal or

external package cracks may occur due to vaporization of the moisture in them (the so called popcorn

effect). For details, refer to the Drypack information in the Data Handbook IC26; Integrated Circuit

Packages; Section: Packing Methods.

SA58632_1

Product data sheet

Rev. 01 — 27 June 2006

23 of 26

SA58632

Philips Semiconductors

2 × 2.2 W BTL audio ampliﬁer

[3] These transparent plastic packages are extremely sensitive to reﬂow soldering conditions and must on no

account be processed through more than one soldering cycle or subjected to infrared reﬂow soldering with

peak temperature exceeding 217 °C ± 10 °C measured in the atmosphere of the reﬂow oven. The package

body peak temperature must be kept as low as possible.

[4] These packages are not suitable for wave soldering. On versions with the heatsink on the bottom side, the

solder cannot penetrate between the printed-circuit board and the heatsink. On versions with the heatsink

on the top side, the solder might be deposited on the heatsink surface.

[5] If wave soldering is considered, then the package must be placed at a 45° angle to the solder wave

direction. The package footprint must incorporate solder thieves downstream and at the side corners.

[6] Wave soldering is suitable for LQFP, QFP and TQFP packages with a pitch (e) larger than 0.8 mm; it is

deﬁnitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm.

[7] Wave soldering is suitable for SSOP, TSSOP, VSO and VSSOP packages with a pitch (e) equal to or larger

than 0.65 mm; it is deﬁnitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm.

[8] Image sensor packages in principle should not be soldered. They are mounted in sockets or delivered

pre-mounted on ﬂex foil. However, the image sensor package can be mounted by the client on a ﬂex foil by

using a hot bar soldering process. The appropriate soldering proﬁle can be provided on request.

[9] Hot bar soldering or manual soldering is suitable for PMFP packages.

17. Abbreviations

Table 11. Abbreviations

Acronym

BTL

Description

Bridge-Tied Load

CMOS

DAP

Complementary Metal Oxide Semiconductor

Die Attach Paddle

ESD

ElectroStatic Discharge

Negative-Positive-Negative

Printed-Circuit Board

NPN

PCB

PNP

Positive-Negative-Positive

Root Mean Squared

RMS

SE

Single-Ended

THD

Total Harmonic Distortion

18. Revision history

Table 12. Revision history

Document ID

Release date

20060627

Data sheet status

Change notice

Supersedes

SA58632_1

Product data sheet

-

SA58632_1

Product data sheet

Rev. 01 — 27 June 2006

24 of 26

SA58632

Philips Semiconductors

2 × 2.2 W BTL audio ampliﬁer

19. Legal information

19.1 Data sheet status

Document status^[1][2]

Product status^[3]

Development

Deﬁnition

Objective [short] data sheet

This document contains data from the objective speciﬁcation for product development.

This document contains data from the preliminary speciﬁcation.

This document contains the product speciﬁcation.

Preliminary [short] data sheet Qualiﬁcation

Product [short] data sheet Production

[1]

[2]

[3]

Please consult the most recently issued document before initiating or completing a design.

The term ‘short data sheet’ is explained in section “Deﬁnitions”.

The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.semiconductors.philips.com.

malfunction of a Philips Semiconductors product can reasonably be expected

19.2 Deﬁnitions

to result in personal injury, death or severe property or environmental

damage. Philips Semiconductors accepts no liability for inclusion and/or use

of Philips Semiconductors products in such equipment or applications and

therefore such inclusion and/or use is at the customer’s own risk.

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modiﬁcations or additions. Philips Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liability for the consequences of

use of such information.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. Philips Semiconductors makes no

representation or warranty that such applications will be suitable for the

speciﬁed use without further testing or modiﬁcation.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and title. A short data sheet is intended

for quick reference only and should not be relied upon to contain detailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local Philips Semiconductors

sales ofﬁce. In case of any inconsistency or conﬂict with the short data sheet,

the full data sheet shall prevail.

Limiting values — Stress above one or more limiting values (as deﬁned in

the Absolute Maximum Ratings System of IEC 60134) may cause permanent

damage to the device. Limiting values are stress ratings only and and

operation of the device at these or any other conditions above those given in

the Characteristics sections of this document is not implied. Exposure to

limiting values for extended periods may affect device reliability.

Terms and conditions of sale — Philips Semiconductors products are sold

subject to the general terms and conditions of commercial sale, as published

at http://www.semiconductors.philips.com/proﬁle/terms, including those

pertaining to warranty, intellectual property rights infringement and limitation

of liability, unless explicitly otherwise agreed to in writing by Philips

19.3 Disclaimers

General — Information in this document is believed to be accurate and

reliable. However, Philips Semiconductors does not give any representations

or warranties, expressed or implied, as to the accuracy or completeness of

such information and shall have no liability for the consequences of use of

such information.

Semiconductors. In case of any inconsistency or conﬂict between information

in this document and such terms and conditions, the latter will prevail.

No offer to sell or license — Nothing in this document may be interpreted

or construed as an offer to sell products that is open for acceptance or the

grant, conveyance or implication of any license under any copyrights, patents

or other industrial or intellectual property rights.

Right to make changes — Philips Semiconductors reserves the right to

make changes to information published in this document, including without

limitation speciﬁcations and product descriptions, at any time and without

notice. This document supersedes and replaces all information supplied prior

to the publication hereof.

19.4 Trademarks

Notice: All referenced brands, product names, service names and trademarks

are the property of their respective owners.

Suitability for use — Philips Semiconductors products are not designed,

authorized or warranted to be suitable for use in medical, military, aircraft,

space or life support equipment, nor in applications where failure or

20. Contact information

For additional information, please visit: http://www.semiconductors.philips.com

For sales ofﬁce addresses, send an email to: sales.addresses@www.semiconductors.philips.com

SA58632_1

Product data sheet

Rev. 01 — 27 June 2006

25 of 26

SA58632

Philips Semiconductors

2 × 2.2 W BTL audio ampliﬁer

21. Contents

1

2

3

4

5

6

General description . . . . . . . . . . . . . . . . . . . . . . 1

Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Quick reference data . . . . . . . . . . . . . . . . . . . . . 2

Ordering information. . . . . . . . . . . . . . . . . . . . . 2

Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 3

7

7.1

7.2

Pinning information. . . . . . . . . . . . . . . . . . . . . . 4

Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 4

8

Functional description . . . . . . . . . . . . . . . . . . . 5

Power ampliﬁer . . . . . . . . . . . . . . . . . . . . . . . . . 5

Mode select pin (MODE) . . . . . . . . . . . . . . . . . 5

BTL/SE output conﬁguration. . . . . . . . . . . . . . . 5

8.1

8.2

8.3

9

Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 6

Thermal characteristics. . . . . . . . . . . . . . . . . . . 6

Static characteristics. . . . . . . . . . . . . . . . . . . . . 6

Dynamic characteristics . . . . . . . . . . . . . . . . . . 7

Application information. . . . . . . . . . . . . . . . . . . 8

BTL application. . . . . . . . . . . . . . . . . . . . . . . . . 8

10

11

12

13

13.1

14

Test information. . . . . . . . . . . . . . . . . . . . . . . . . 9

Static characterization . . . . . . . . . . . . . . . . . . . 9

BTL dynamic characterization . . . . . . . . . . . . 10

Thermal behavior . . . . . . . . . . . . . . . . . . . . . . 11

Single-ended application . . . . . . . . . . . . . . . . 15

General remarks. . . . . . . . . . . . . . . . . . . . . . . 19

SA58632BS PCB demo . . . . . . . . . . . . . . . . . 19

14.1

14.2

14.3

14.4

14.5

14.6

15

Package outline . . . . . . . . . . . . . . . . . . . . . . . . 21

16

16.1

Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22

Introduction to soldering surface mount

packages . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22

Reﬂow soldering . . . . . . . . . . . . . . . . . . . . . . . 22

Wave soldering . . . . . . . . . . . . . . . . . . . . . . . . 22

Manual soldering . . . . . . . . . . . . . . . . . . . . . . 23

Package related soldering information . . . . . . 23

16.2

16.3

16.4

16.5

17

18

Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 24

Revision history. . . . . . . . . . . . . . . . . . . . . . . . 24

19

Legal information. . . . . . . . . . . . . . . . . . . . . . . 25

Data sheet status . . . . . . . . . . . . . . . . . . . . . . 25

Deﬁnitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 25

Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 25

Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 25

19.1

19.2

19.3

19.4

20

21

Contact information. . . . . . . . . . . . . . . . . . . . . 25

Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

For more information, please visit: http://www.semiconductors.philips.com.

For sales office addresses, email to: sales.addresses@www.semiconductors.philips.com.

Date of release: 27 June 2006

Document identifier: SA58632_1


型号：	SA58632BS
厂家：	NXP
描述：	2 x 2.2 W BTL audio amplifier 2× 2.2 W¯¯ BTL音频放大器音频放大器
文件：	总26页 (文件大小：185K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

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