SA58641 [NXP]
High performance mixer FM IF system with high-speed RSSI; 高性能混频器FM IF系统高速RSSI
| 型号： | SA58641 |
| 厂家： | 
NXP |
| 描述： | High performance mixer FM IF system with high-speed RSSI |
| 文件： | 总17页 (文件大小：179K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INTEGRATED CIRCUITS
SA58641
High performance mixer FM IF system
with high-speed RSSI
Objective data
2004 Dec 16
Philips
Semiconductors
Philips Semiconductors
Objective data
High performance mixer FM IF system
with high-speed RSSI
SA58641
DESCRIPTION
PIN CONFIGURATION
The SA58641 is a high performance monolithic FM IF system with
high-speed RSSI incorporating a mixer/oscillator, two limiting
intermediate frequency amplifiers, quadrature detector, logarithmic
received signal strength indicator (RSSI), voltage regulator,
wideband data output and fast RSSI op amps. The SA58641 is
available in 20-lead SSOP (shrink small outline package).
DK Package
RF
MIXER OUT
IF AMP DECOUPLING
18 IF AMP IN
1
2
20
IN
RF BYPASS
19
3
The SA58641 was designed for high bandwidth portable
communication applications and will function down to 2.7 V. The RF
section is similar to the famous SA605. The data output has a
minimum bandwidth of 600 kHz. This is designed to demodulate
wideband data. The RSSI output is amplified. The RSSI output has
access to the feedback pin. This enables the designer to adjust the
level of the outputs or add filtering.
XTAL OSC (EMITTER)
XTAL OSC (BASE)
4
17
16
15
14
IF AMP DECOUPLING
V
5
IF AMP OUT
GND
CC
RSSI FEEDBACK
6
RSSI
OUT
LIMITER IN
7
POWER DOWN CONTROL
8
13 LIMITER DECOUPLING
SA58641 incorporates a power-down mode which powers down the
device when Pin 8 is LOW. Power down logic levels are CMOS and
TTL compatible with high input impedance.
9
12
11
DATA OUT
LIMITER DECOUPLING
LIMITER OUT
QUADRATURE IN
10
FEATURES
• Wideband data output (600 kHz min.)
SR00491
Figure 1. Pin configuration
• Fast RSSI rise and fall times
• Low power consumption: 7.5 mA typ. at 5 V
• Mixer input to >500 MHz
APPLICATIONS
• Mixer noise figure of 12 dB at 240 MHz
• DECT (Digital European Cordless Telephone)
• Digital cordless telephones
• XTAL oscillator effective to 150 MHz (L.C. oscillator to 1 GHz local
oscillator can be injected)
• Digital cellular telephones
• 92 dB of IF Amp/Limiter gain
• Portable high performance communications receivers
• Single conversion VHF/UHF receivers
• FSK and ASK data receivers
• 25 MHz limiter small signal bandwidth
• Temperature compensated logarithmic Received Signal Strength
Indicator (RSSI) with a dynamic range in excess of 90 dB
• Wireless LANs
• RSSI output internal op amp
• Internal op amps with rail-to-rail outputs
• Low external component count; suitable for crystal/ceramic/LC
filters
• Excellent sensitivity: 0.54 µV into 50 Ω matching network for
12 dB SINAD (Signal to Noise and Distortion ratio) for 1 kHz tone
with RF at 240 MHz and IF at 10.7 MHz
• ESD hardened
• 10.7 MHz filter matching (330 Ω)
• Power-down mode (I = 200 µA)
CC
ORDERING INFORMATION
DESCRIPTION
TEMPERATURE RANGE
ORDER CODE
DWG #
SOT266–1
20-Pin Plastic Shrink Small Outline Package (Surface-mount)
–40 °C to +85 °C
SA58641DK
2
2004 Dec 16
Philips Semiconductors
Objective data
High performance mixer FM IF system
with high-speed RSSI
SA58641
BLOCK DIAGRAM
20
19
18
17
16
15
14
13
12
11
GND
IF
AMP
LIMITER
MIXER
QUAD
FAST
RSSI
OSCILLATOR
–
+
–
+
PWR
DWN
V
CC
AUDIO
RSSI
E
B
1
2
3
4
5
6
7
8
9
10
SR00492
Figure 2. Block diagram
ABSOLUTE MAXIMUM RATINGS
SYMBOL
PARAMETER
RATING
UNITS
V
V
CC
Single supply voltage
0.3 to 7
V
IN
Voltage applied to any other pin
–0.3 to (V +0.3)
V
CC
T
Storage temperature range
–65 to +150
–40 to +85
117
°C
stg
T
amb
Operating ambient temperature range SA58641
Thermal impedance (DC package)
°C
θ
°C/W
JA
DC ELECTRICAL CHARACTERISTICS
V
CC
= +5 V, T
= 25 °C; unless otherwise stated.
amb
LIMITS
TYP
5.0
SYMBOL
PARAMETER
TEST CONDITIONS
UNITS
MAX
MIN
4.5
5.5
–10
–10
0
V
CC
Power supply voltage range
DC current drain
5.5
8.5
10
V
mA
µA
µA
V
I
Pin 8 = HIGH
Pin 8 LOW
7.5
CC
Input current
Input level
Pin 8 HIGH
10
Pin 8 LOW
0.3V
CC
Pin 8 HIGH
0.7V
V
CC
V
CC
I
Standby
Pin 8 = LOW
0.2
10
5
0.5
mA
µs
µs
CC
ON
t
Power-up time
Power-down time
RSSI valid (10% to 90%)
RSSI invalid (90% to 10%)
t
OFF
3
2004 Dec 16
Philips Semiconductors
Objective data
High performance mixer FM IF system
with high-speed RSSI
SA58641
AC ELECTRICAL CHARACTERISTICS
T
amb
= 25 °C; V = +5 V, unless otherwise stated. RF frequency = 240.05 MHz + 14.5 dBV RF input step-up; IF frequency = 10.7 MHz;
CC
RF level = –45 dBm; FM modulation = 1 kHz with ±125 kHz peak deviation. Audio output with C-message weighted filter and de-emphasis
capacitor. Test circuit Figure 1. The parameters listed below are tested using automatic test equipment to assure consistent electrical
characteristics. The limits do not represent the ultimate performance limits of the device. Use of an optimized RF layout will improve many of the
listed parameters.
LIMITS
SYMBOL
PARAMETER
TEST CONDITIONS
UNITS
MIN
TYP
MAX
Mixer/Osc section (ext LO = 160mV
)
RMS
f
Input signal frequency
External oscillator (buffer)
Noise figure at 240 MHz
500
500
12
MHz
MHz
dB
IN
f
OSC
Third-order input intercept point
Conversion power gain
RF input resistance
Matched f1=240.05 MHz; f2=240.35 MHz
Matched 14.5 dBV step-up
Single-ended input
–16
11
dBm
dB
8
700
3.5
330
Ω
RF input capacitance
pF
Mixer output resistance
(Pin 20)
Ω
IF section
IF amp gain
330 Ω load
330 Ω load
38
54
dB
dB
Limiter gain
Input limiting –3dB
AM rejection
Test at Pin 18
80% AM 1 kHz
–105
50
dBm
dB
Data level
R
= 100 kΩ
120
600
130
700
16
mV
RMS
LOAD
3 dB data bandwidth
SINAD sensitivity
Total harmonic distortion
Signal-to-noise ratio
kHz
RF level = –111 dBm
dB
dB
dB
V
THD
S/N
–43
60
–38
No modulation for noise
IF level = –90 dBm
0.6
1.2
1.6
1.0
1.8
2.3
IF RSSI output with buffer
IF level = –45 dBm
0.2
0.8
V
IF level = –10 dBm
V
IF RSSI output rise time
(10kHz pulse, no 10.7MHz filter)
(no RSSI bypass capacitor)
IF RSSI output fall time
(10 kHz pulse, no 10.7 MHz filter)
(no RSSI bypass capacitor)
RSSI range
IF frequency = 10.7 MHz
RF level = –56 dBm
RF level = –28 dBm
IF frequency = 10.7 MHz
RF level = –56 dBm
RF level = –28 dBm
1.2
1.1
µs
µs
2.0
7.3
µs
µs
dB
dB
Ω
70
RSSI accuracy
±2.0
330
330
330
300
130
IF input impedance
IF output impedance
Ω
Limiter input impedance
Limiter output impedance
Limiter output level with no load
Ω
Ω
mV
RMS
RF/IF section (int LO)
System RSSI output
System SINAD
RF level = –10 dBm
RF level = –95 dBm
1.4
12
V
dB
4
2004 Dec 16
Philips Semiconductors
Objective data
High performance mixer FM IF system
with high-speed RSSI
SA58641
PERFORMANCE CHARACTERISTICS
9.0
0.50
0.45
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
8.5
V
= 5V
8.0
7.5
7.0
6.5
6.0
5.5
5.0
CC
V
= 5V
CC
–50 –40 –30 –20 –10
0
10 20 30 40 50 60 70 80 90
–50–40 –30 –20 –10
0
10 20 30 40 50 60 70 80 90 100
TEMPERATURE (°C)
TEMPERATURE (°C)
Supply Current vs Temperature and Supply Voltage
Power Down Supply Current vs Temperature and Supply Voltage
–5
20
RF level = -45 dBm
19
–7
18
17
16
15
RF level = -45 dBm
–9
–11
5.5V
–13
14
5.5V
13
12
11
10
9
–15
–17
–19
–21
–23
–25
8
7
6
5
–40
0
25
70
85
–40
0
25
70
85
Temperature (°C)
Temperature (°C)
Mixer Power Gain vs Temperature and Supply Voltage
Mixer IIP3 at 240MHz vs Temperature and Supply Voltage
20
300
AUDIO
0
250
5.5V
–20
AM REJECTION
200
–40
DISTORTION
150
100
50
–60
NOISE
–80
–100
–120
12dB SINAD
0
–50 –40 –30 –20 –10
0
10 20 30 40 50 60 70 80 90
–40
0
25
70
85
TEMPERATURE (°C)
Temperature (°C)
12dB SINAD and Relative Audio, THD, Noise
and AM Rejection for VCC = 5 V vs Temperature
RF = 240MHz, Level = –68dBm, Deviation = 125kHz
Audio Reference Level vs Temperature and Supply Voltage
SR02522
Figure 3. Performance Characteristics
5
2004 Dec 16
Philips Semiconductors
Objective data
High performance mixer FM IF system
with high-speed RSSI
SA58641
PERFORMANCE CHARACTERISTICS (continued)
10
0
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
10
0
2
AUDIO
1.8
1.6
1.4
1.3
1.0
0.8
0.6
0.4
0.2
0
AUDIO
–10
–20
–30
–40
–50
–60
–70
–80
–90
–10
–20
–30
–40
–50
–60
–70
–80
–90
AM REJECTION
AM REJECTION
RSSI
THD+N
THD+N
NOISE
NOISE
RSSI
RF INPUT LEVEL (dBm)
RF INPUT LEVEL (dBm)
Receiver RF Performance — T = 25°C,
Audio Level = 129mV
Receiver RF Performance — T = –40°C,
Audio Level = 118mV
RMS
RMS
10
0
2
0
–10
–20
–30
–40
–50
–60
–70
–80
–90
–100
–110
AUDIO
1.8
1.6
1.4
1.2
1
–10
–20
–30
–40
–50
–60
–70
–80
–90
AM REJECTION
RSSI
THD+N
NOISE
0.8
0.6
0.4
0.2
0
RF INPUT POWER (dBm)
Mixer Third Order Intercept and Compression
Receiver RF Performance – T = 85°C, Audio Level = 131mV
RMS
85
2
–40°C
–5
–7
RF level = -45 dBm
1.8
1.6
1.4
1.2
1
25°C
85°C
–9
–11
–13
–15
–17
–19
–21
–23
–25
5.5V
0.8
0.6
0.4
0.2
0
–40
0
25
70
RF INPUT LEVEL (dBm)
Temperature (°C)
RSSI vs RF Input Level and Temperature
Mixer IIP3 at 240MHz vs Temperature and Supply Voltage
SR02523
Figure 4. Performance Characteristics
6
2004 Dec 16
Philips Semiconductors
Objective data
High performance mixer FM IF system
with high-speed RSSI
SA58641
PERFORMANCE CHARACTERISTICS (continued)
65.00
63.00
61.00
59.00
57.00
55.00
53.00
51.00
49.00
47.00
45.00
50.00
48.00
46.00
44.00
V
= 5V
CC
V
= 5V
CC
42.00
40.00
38.00
36.00
34.00
32.00
30.00
TEMPERATURE (°C)
TEMPERATURE (°C)
Limiting Amplifier Gain vs Temperature vs Supply Voltage
IF Amplifier Gain vs Temperature vs Supply Voltage
0.8
0.8
600kHz Data Rate,
0.7
0.7
IF = 9.85MHz,
Dev = 288kHz,
RF = -40dBm
5.5V
0.6
0.6
0.5
0.4
0.3
0.5
5.5V
0.4
0.3
0.2
0.1
0
0.2
1kHz Data Rate,
IF = 9.85MHz,
Dev = 288kHz,
0.1
RF = -40dBm
0
–40
0
25
70
85
–40
0
25
70
85
Temperature (°C)
Temperature (°C)
Data Level vs Temperature and Supply Voltage
Data Level vs Temperature and Supply Voltage
SR02524
Figure 5. Performance Characteristics
7
2004 Dec 16
Philips Semiconductors
Objective data
High performance mixer FM IF system
with high-speed RSSI
SA58641
PERFORMANCE CHARACTERISTICS (continued)
300
250
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
600kHz Data Rate,
IF = 9.85MHz,
Dev = 288kHz,
RF = -40dBm
5.5V
200
5.5V
150
100
50
0
–40
0
25
70
85
–40
0
25
70
85
Temperature (°C)
Temperature (°C)
Audio Reference Level vs Temperature and Supply Voltage
Data Level vs Temperature and Supply Voltage
0.8
1kHz Data Rate,
IF = 9.85MHz,
Dev = 288kHz,
RF = -40dBm
0.7
5.5V
0.6
0.5
0.4
0.3
0.2
0.1
0
–40
0
25
70
85
Temperature (°C)
Data Level vs Temperature and Supply Voltage
SR02525
Figure 6. Performance Characteristics
8
2004 Dec 16
Philips Semiconductors
Objective data
High performance mixer FM IF system
with high-speed RSSI
SA58641
PIN FUNCTIONS
PIN
PIN
PIN
PIN
DC V
EQUIVALENT CIRCUIT
DC V
EQUIVALENT CIRCUIT
No. MNEMONIC
No. MNEMONIC
V
CC
RSSI
—
+
1
RF IN
+1.07
6
+0.20
6
FEEDBACK
0.8k
0.8k
2
1
V
CC
RF
RSSI
+
2
+1.07
7
+0.20
7
BYPASS
OUT
—
R
R
XTAL
OSC
POWER
18k
8
3
+1.57
8
+2.75
DOWN
4
MIX
V
CC
3
150µA
XTAL
OSC
DATA
4
+2.32
9
+1.09
OUT
+
9
—
80k
V
REF
5
10
QUAD.
5
V
CC
+3.00
10
+3.00
IN
BANDGAP
20µA
SR00497
Figure 7. Pin Functions
9
2004 Dec 16
Philips Semiconductors
Objective data
High performance mixer FM IF system
with high-speed RSSI
SA58641
PIN FUNCTIONS (continued)
PIN
PIN
PIN
PIN
DC V
EQUIVALENT CIRCUIT
DC V
EQUIVALENT CIRCUIT
No. MNEMONIC
No. MNEMONIC
LIMITER
IF
11
+1.35
16
+1.22
140Ω
OUT
AMP OUT
11
16
8.8k
8.8k
LIMITER
IF AMP
12
+1.23
17
+1.22
DECOUP
DECOUP
14
18
LIMITER
IF
330Ω
330Ω
13
+1.23
18
+1.22
COUPLING
AMP IN
50µA
50µA
12
17
13
19
LIMITER
IF AMP
14
+1.23
19
+1.22
IN
DECOUP
110Ω
MIXER
20
15
GND
0
20
+1.03
OUT
400µA
SR00498
Figure 8. Pin Functions (cont.)
10
2004 Dec 16
Philips Semiconductors
Objective data
High performance mixer FM IF system
with high-speed RSSI
SA58641
MIXER
IF/LIM OUT
IF/LIM IN
R9
R8
R4
R11
R6
R2
C12
C11
R7
C16
R5
R3
C20
R10
C17
C14
FLT1
FLT2
L5
2
1
1
2
2
1
1
2
SW5
C19
C15
C18
C13
20
19
18
17
16
15
14
13
12
11
IF
AMP
LIMITER
MIXER
C21
QUAD
RSSI
OSCILLATOR
+
+
–
–
V
CC
PWR
DWN
DATA
1
2
3
4
5
6
7
8
9
10
C1
C2
C3
C4
C5
C6
C8
R1
*L1
FLT
3
L3
L4
C9
C7
*L2
FLT
4
PWR
DWN
CTRL
C10
DATA
OUT
RSSI
OUT
V
CC
RF IN
LO IN
Automatic Test Circuit Component List
R1
C1
L1
8.2kΩ select
0.1µF
150nH select for input match
C12
C13
C14
C15
C16
C17
C18
160pF select
1000pF
0.1µF
1000pF
0.1µF
0.1µF
1000pF
R2
R3
R4
R5
R6
R7
R8
R9
C2
C3
C4
C5
C6
*C7
C8
C9
L2
L3
L4
L5
6.42kΩ
347.8Ω
49.9Ω
1kΩ
1–5pF select for input match
0.1µF
0.1µF
1–5pF select for input match
100pF
6.8µF 10V
1µF
39pF select
22nH select for input match
47nH select for input match
5.6µH select for input match
1.27–2.25µH select for mixer
output match
49.9Ω
6.42kΩ
347.8Ω
49.9Ω
1kΩ
49.9Ω
FLT1
10.7MHz (Murata SFE10.7MA5-A)
C19
C20
C21
1000pF
0.1µF
1pF
FLT2
FLT3
FLT4
10.7MHz (Murata SFE10.7MA5-A)
“C” message weighted
Active de-emphasis
R10
R11
C10
C11
0.1µF
0.1µF
*NOTE: This value can be reduced when a battery is the power source.
SR00501
Figure 9. SA58641 240.05MHz (RF) / 10.7MHz (IF) Test Circuit
11
2004 Dec 16
Philips Semiconductors
Objective data
High performance mixer FM IF system
with high-speed RSSI
SA58641
C1
5–30pF
L4
680nH
SMA
RF IN
J1
110.592MHz
+/–288kHz
L1
180nH
C20
68pF
C21
330pF
U1
C19
1nF
C18
68pF
1
20
19
18
17
16
15
14
RF IN
MIXER OUT
C2
10nF
IF AMP
DECOUPLING 1
2
3
4
5
6
7
RF BYPASS
XTAL
OSC (EMITTER)
IF IN
SMA
LO IN
C4
1nF
C3
1nF
120.392MHz
@–10dBm
C17
1nF
XTAL
OSC (BASE)
IF AMP
DECOUPLING 2
J2
R1
51
IF OUT
V
CC
C16
100pF
RSSI FEEDBACK
RSSI OUT
GROUND
LIMITER IN
R3
22k
C13
100pF
R4
33k
8
9
13
12
PD CTRL
LIMITER DEC1
LIMITER DEC2
LIMITER OUT
R2
10
+3V
DATA OUT
V
CC
C11
1nF
C12
1nF
+
C5
15µF
C6
100nF
10
11
QUAD IN
GND
RSSI
SA58641
J3
C14
47pF
C7
470pF
C10
15pF
C15
PWR DWN
DATA OUT
330pF
+
C8
5-30pF
L2
2.2µH
R5
1.2k
C9
82pF
L3
680nH
R6
560
SR02526
Figure 10. SA58641 110.592 MHz (RF) / 9.8 MHz (IF) DECT Application Circuit
12
2004 Dec 16
Philips Semiconductors
Objective data
High performance mixer FM IF system
with high-speed RSSI
SA58641
Table 1.
DECT Application Circuit Electrical Characteristics
RF frequency = 110.592 MHz; IF frequency = 9.8 MHz; RF level = –45 dBm; FM modulation = 100 kHz with ±288 kHz peak deviation.
SYMBOL
PARAMETER
TEST CONDITIONS
TYPICAL
UNITS
Mixer/Osc section (ext LO = 160 mV
)
RMS
PG
NF
Conversion power gain
13
12
dB
dB
Noise Figure at 110 MHz
Third order input intercept
RF input resistance
IIP3
Matched f1 = 110.592 MHz; f2 = 110.892 MHz
–15
690
3.6
dBm
Ω
R
C
IN
IN
RF input capacitance
pF
IF section
IF amp gain
330 Ω load
330 Ω load
38
54
dB
dB
Limiter amp gain
Data level
R
= 3 kΩ
130
700
mV
RMS
LOAD
3 dB data bandwidth
kHz
RF/IF section (internal LO)
System RSSI output
RF level = –10 dBm
RF level = –83 dBm
1.4
10
V
1
System S/N
dB
NOTE:
–3
1. 10 dB S/N corresponds to BER = 10
.
RF GENERATOR
110.592 MHz
SA58641 DEMO BOARD
RSSI DATA
V
CC
= 5 V
LO / GENERATOR
120.392 MHz
DC VOLTMETER
SPECTRUM
ANALYZER
SCOPE
SR02527
Figure 11. SA58641 Application Circuit Test Set Up
NOTES:
1. RF generator: Set your RF generator at 110.592 MHz, use a 100 kHz modulation frequency and a ±288 kHz deviation.
2. Layout: The layout is very critical in the performance of the receiver. We highly recommend our demo board layout.
3. RSSI: The smallest RSSI voltage (i.e., when no RF input is present and the input is terminated) is a measure of the quality of the layout and
design. If the lowest RSSI voltage is 500 mV or higher, it means the receiver is in regenerative mode. In that case, the receiver sensitivity
will be worse than expected.
4. Supply bypass and shielding: All of the inductors, the quad tank, and their shield must be grounded. A 0.1 µF bypass capacitor on the supply
pin improves sensitivity.
13
2004 Dec 16
Philips Semiconductors
Objective data
High performance mixer FM IF system
with high-speed RSSI
SA58641
TOP SILK SCREEN (SSOP)
SR02528
Figure 12. SA58641 Demoboard Layout (Not Actual Size)
14
2004 Dec 16
Philips Semiconductors
Objective data
High performance mixer FM IF system
with high-speed RSSI
SA58641
insertion loss between the first and second IF stages. If the IF filter
or interstage network does not cause 6 dB(v) insertion loss, a fixed
or variable resistor can be added between the first IF output (Pin 16)
and the interstage network.
CIRCUIT DESCRIPTION
The SA58641 is an IF signal processing system suitable for second
IF or single conversion systems with input frequency as high as
1 GHz. The bandwidth of the IF amplifier is about 40 MHz, with
38 dB of gain from a 50 Ω source. The bandwidth of the limiter is
about 28 MHz with about 54 dB of gain from a 50 Ω source.
However, the gain/bandwidth distribution is optimized for 10.7 MHz,
330 Ω source applications. The overall system is well-suited to
battery operation as well as high performance and high quality
products of all types, such as cordless and cellular hand-held
phones.
The signal from the second limiting amplifier goes to a Gilbert cell
quadrature detector. One port of the Gilbert cell is internally driven
by the IF. The other output of the IF is AC-coupled to a tuned
quadrature network. This signal, which now has a 90° phase
relationship to the internal signal, drives the other port of the
multiplier cell.
Overall, the IF section has a gain of 90 dB. For operation at
intermediate frequency at 10.7 MHz. Special care must be given to
layout, termination, and interstage loss to avoid instability.
The input stage is a Gilbert cell mixer with oscillator. Typical mixer
characteristics include a noise figure of 14 dB, conversion gain of
11 dB, and input third-order intercept of –16 dBm. The oscillator will
operate in excess of 1 GHz in L/C tank configurations. Hartley or
Colpitts circuits can be used up to 100 MHz for xtal configurations.
Butler oscillators are recommended for xtal configurations up to
150 MHz.
The demodulated output (DATA) of the quadrature is a voltage
output. This output is designed to handle a minimum bandwidth of
600 kHz. This is designed to demodulate wideband data, such as in
DECT applications.
A Receive Signal Strength Indicator (RSSI) completes the circuitry.
The output range is greater than 90 dB and is temperature
compensated. This log signal strength indicator exceeds the criteria
for AMPS or TACS cellular telephone, DECT and RCR-28 cordless
telephone. This signal drives an internal op amp. The op amp is
capable of rail-to-rail output. It can be used for gain, filtering, or
2nd-order temperature compensation of the RSSI, if needed.
The output of the mixer is internally loaded with a 330 Ω resistor
permitting direct connection to a 10.7 MHz ceramic filter for
narrowband applications. The input resistance of the limiting IF
amplifiers is also 330 Ω. With most 10.7 MHz ceramic filters and
many crystal filters, no impedance matching network is necessary.
For applications requiring wideband IF filtering, such as DECT,
external LC filters are used (see Figure 10). To achieve optimum
linearity of the log signal strength indicator, there must be a 6 dB(v)
NOTE: dB(v) = 20log V /V
OUT IN
15
2004 Dec 16
Philips Semiconductors
Objective data
High performance mixer FM IF system
with high-speed RSSI
SA58641
SSOP20: plastic shrink small outline package; 20 leads; body width 4.4 mm
SOT266-1
16
2004 Dec 16
Philips Semiconductors
Objective data
High performance mixer FM IF system
with high-speed RSSI
SA58641
REVISION HISTORY
Rev
Date
Description
_1
20041216
Product data (9397 750 14339).
Data sheet status
Product
status
Definitions
[1]
Level
Data sheet status
[2] [3]
I
Objective data
Development
This data sheet contains data from the objective specification for product development.
Philips Semiconductors reserves the right to change the specification in any manner without notice.
II
Preliminary data
Qualification
Production
This data sheet contains data from the preliminary specification. Supplementary data will be published
at a later date. Philips Semiconductors reserves the right to change the specification without notice, in
order to improve the design and supply the best possible product.
III
Product data
This data sheet contains data from the product specification. Philips Semiconductors reserves the
right to make changes at any time in order to improve the design, manufacturing and supply. Relevant
changes will be communicated via a Customer Product/Process Change Notification (CPCN).
[1] Please consult the most recently issued data sheet before initiating or completing a design.
[2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL
http://www.semiconductors.philips.com.
[3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
Definitions
Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limitingvaluesdefinition— Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given
in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no
representation or warranty that such applications will be suitable for the specified use without further testing or modification.
Disclaimers
Life support — These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be
expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree
to fully indemnify Philips Semiconductors for any damages resulting from such application.
Right to make changes — Philips Semiconductors reserves the right to make changes in the products—including circuits, standard cells, and/or software—described
or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated
viaaCustomerProduct/ProcessChangeNotification(CPCN).PhilipsSemiconductorsassumesnoresponsibilityorliabilityfortheuseofanyoftheseproducts,conveys
nolicenseortitleunderanypatent, copyright, ormaskworkrighttotheseproducts, andmakesnorepresentationsorwarrantiesthattheseproductsarefreefrompatent,
copyright, or mask work right infringement, unless otherwise specified.
Koninklijke Philips Electronics N.V. 2004
Contact information
All rights reserved. Printed in U.S.A.
For additional information please visit
http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
Date of release: 12-04
9397 750 14339
For sales offices addresses send e-mail to:
sales.addresses@www.semiconductors.philips.com.
Document order number:
Philips
Semiconductors
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