SA58637BS [NXP]
2 X 2.2 W BTL audio amplifier; 2× 2.2 W¯¯ BTL音频放大器
| 型号： | SA58637BS |
| 厂家： | 
NXP |
| 描述： | 2 X 2.2 W BTL audio amplifier |
| 文件： | 总22页 (文件大小：156K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SA58637
2 × 2.2 W BTL audio amplifier
Rev. 01 — 25 February 2008
Product data sheet
1. General description
The SA58637 is a two-channel audio amplifier in an HVQFN20 package. It provides
power output of 2.2 W per channel with an 8 Ω load at 9 V supply. The internal circuit is
comprised of two Bridge-Tied Load (BTL) amplifiers with a complementary PNP-NPN
output stage and standby/mute logic. The SA58637 is housed in a 20-pin HVQFN
package, which has an exposed die attach paddle enabling reduced thermal resistance
and increased power dissipation.
2. Features
I Low junction-to-ambient thermal resistance using exposed die attach paddle
I Gain can be fixed with external resistors from 6 dB to 30 dB
I Standby mode controlled by CMOS-compatible levels
I Low standby current < 10 µA
I No switch-on/switch-off plops
I High power supply ripple rejection: 50 dB minimum
I ElectroStatic Discharge (ESD) protection
I Output short circuit to ground protection
I Thermal shutdown protection
3. Applications
I Professional and amateur mobile radio
I Portable consumer products: toys and games
I Personal computer remote speakers
SA58637
NXP Semiconductors
2 × 2.2 W BTL audio amplifier
4. Quick reference data
Table 1.
Quick reference data
VCC = 6 V; Tamb = 25 °C; RL = 8 Ω; VMODE = 0 V; measured in test circuit Figure 3; unless otherwise
specified.
Symbol Parameter
Conditions
operating
Min
2.2
-
Typ
9
Max
18
22
10
-
Unit
V
VCC
Iq
supply voltage
quiescent current
standby current
output power
[1]
RL = ∞ Ω
15
-
mA
µA
W
Istb
Po
VMODE = VCC
THD+N = 10 %
THD+N = 0.5 %
-
1.2
0.9
-
1.5
1.1
2.2
-
W
THD+N = 10 %;
VCC = 9 V; application
demo board
-
W
THD+N
PSRR
total harmonic
distortion-plus-noise
Po = 0.5 W
-
0.15
0.3
%
[2]
[3]
power supply rejection
ratio
1 kHz
50
40
-
-
-
-
dB
dB
100 Hz to 20 kHz
[1] With a load connected at the outputs the quiescent current will increase, the maximum of this increase
being equal to the DC output offset voltage divided by RL.
[2] Power supply rejection ratio is measured at the output with a source impedance of RS = 0 Ω at the input.
The ripple voltage is a sine wave with a frequency of 1 kHz and an amplitude of 100 mV (RMS), which is
applied to the positive supply rail.
[3] Power supply rejection ratio is measured at the output, with a source impedance of RS = 0 Ω at the input.
The ripple voltage is a sine wave with a frequency between 100 Hz and 20 kHz and an amplitude of
100 mV (RMS), which is applied to the positive supply rail.
5. Ordering information
Table 2.
Ordering information
Type number Package
Name
Description
Version
SA58637BS HVQFN20 plastic thermal enhanced very thin quad flat package;
SOT910-1
no leads; 20 terminals; body 6 × 5 × 0.85 mm
SA58637_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 25 February 2008
2 of 22
SA58637
NXP Semiconductors
2 × 2.2 W BTL audio amplifier
6. Block diagram
V
V
CCR
CCL
17
10
SA58637
16
15
14
INL−
INL+
OUTL−
R
V
CCL
R
20 kΩ
1
OUTL+
20 kΩ
STANDBY/MUTE LOGIC
11
12
13
INR−
INR+
OUTR−
R
V
CCR
R
20 kΩ
6
OUTR+
3
SVR
20 kΩ
2
4
MODE
SELECT
STANDBY/MUTE LOGIC
5
8
9
19
18
20
7
n.c.
GND GND GND GND LGND RGND
002aad577
Fig 1. Block diagram of SA58637
SA58637_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 25 February 2008
3 of 22
SA58637
NXP Semiconductors
2 × 2.2 W BTL audio amplifier
7. Pinning information
7.1 Pinning
terminal 1
index area
OUTL+
MODE
SVR
1
2
3
4
5
6
16 OUTL−
15 INL−
14 INL+
13 INR+
12 INR−
11 OUTR−
SA58637BS
SELECT
n.c.
OUTR+
002aad578
Transparent top view
Fig 2. Pin configuration for HVQFN20
7.2 Pin description
Table 3.
Symbol
Pin description
Pin
Description
OUTL+
MODE
SVR
1
positive loudspeaker terminal, left channel
operating mode select (standby, mute, operating)
half supply voltage, decoupling ripple rejection
BTL loudspeaker channel select (left, right, both channels)
not connected
2
3
SELECT
n.c.
4
5
OUTR+
RGND
GND
6
positive loudspeaker terminal, right channel
7
ground, right channel
ground[1]
8, 9, 18, 19
VCCR
10
11
12
13
14
15
16
17
20
supply voltage; right channel
OUTR−
INR−
negative loudspeaker terminal, right channel
negative input, right channel
INR+
positive input, right channel
INL+
positive input, left channel
INL−
negative input, left channel
OUTL−
VCCL
negative output terminal, left channel
supply voltage, left channel
LGND
ground, left channel
[1] Pins 8, 9, 18 and 19 are connected to the lead frame and also to the substrate. They may be kept floating.
When connected to the ground plane, the PCB can be used as heatsink.
SA58637_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 25 February 2008
4 of 22
SA58637
NXP Semiconductors
2 × 2.2 W BTL audio amplifier
8. Functional description
The SA58637 is a two-channel BTL audio amplifier capable of delivering 2 × 1.5 W output
power to an 8 Ω load at THD+N = 10 % using a 6 V power supply. It is also capable of
delivering 2 × 2.2 W output power to an 8 Ω load at THD+N = 10 % using a 9 V power
supply. Using the MODE pin, the device can be switched to standby and mute condition.
The device is protected by an internal thermal shutdown protection mechanism. The gain
can be set within a range of 6 dB to 30 dB by external feedback resistors.
8.1 Power amplifier
The power amplifier is a Bridge-Tied Load (BTL) amplifier with a complementary
PNP-NPN output stage. The voltage loss on the positive supply line is the saturation
voltage of a PNP power transistor and on the negative side the saturation voltage of an
NPN power transistor. The total voltage loss is < 1 V.
8.2 Mode select pin (MODE)
The device is in Standby mode (with a very low current consumption) if the voltage at the
MODE pin is greater than VCC − 0.5 V, or if this pin is floating. At a MODE voltage in the
range between 1.5 V and VCC − 1.5 V the amplifier is in a mute condition. The mute
condition is useful to suppress plop noise at the output, caused by charging of the input
capacitor. The device is in Active mode if the MODE pin is grounded or less than 0.5 V
(see Figure 6).
8.3 SELECT output configuration
The outputs differentially drives the speakers, so there is no need for coupling capacitors
(see Figure 3). If the voltage at the SELECT pin is in the range between 1.5 V and
V
CC − 1.5 V, or if it is kept floating, then both channels are operational. If the SELECT pin
is set to a logic LOW or grounded, then only the right channel is operational and the left
channel is in Standby mode. If the SELECT pin is set to logic HIGH or connected to VCC
,
then only the left channel is operational and right channel is in Standby mode. Setting the
SELECT pin to logic LOW or a logic HIGH voltage results in a reduction of quiescent
current consumption by a factor of approximately 2. Switching the SELECT pin during
operation is not plop-free, because the input capacitor of the channel which is coming out
of standby needs to be charged first. For plop-free channel selecting the device has first to
be set in mute condition with the MODE pin (between 1.5 V and VCC − 1.5 V). The
SELECT pin is then set to the new level and after a delay the MODE pin is set to a LOW
level. The delay needed depends on the values of the input capacitors and the feedback
resistors. Time needed is approximately 10 × C1 × (R1 + R2), so approximately
0.6 seconds for the values shown in Figure 3.
Table 4.
Control pins MODE and SELECT versus status of output channels
Voltage levels at control pins at VCC = 5 V; for other voltage levels see Figure 6 and Figure 7.
Control pin
MODE
HIGH[1]/n.c.[2]
HVCC[4]
Status of output channel
Typical Iq (mA)
SELECT
X[3]
HVCC[4]/n.c.[2]
HVCC[4]/n.c.[2]
Left channel
standby
mute
Right channel
standby
mute
on
0
15
15
LOW[5]
on
SA58637_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 25 February 2008
5 of 22
SA58637
NXP Semiconductors
2 × 2.2 W BTL audio amplifier
Table 4.
Control pins MODE and SELECT versus status of output channels …continued
Voltage levels at control pins at VCC = 5 V; for other voltage levels see Figure 6 and Figure 7.
Control pin
Status of output channel
Typical Iq (mA)
MODE
SELECT
HIGH[1]
HVCC[4]/n.c.[2]
LOW[5]
Left channel
mute/on
Right channel
HVCC[4]/LOW[5]
HVCC[4]/LOW[5]
HVCC[4]/LOW[5]
standby
mute/on
mute/on
8
mute/on
15
8
standby
[1] HIGH = VSELECT > VCC − 0.5 V.
[2] n.c. = not connected or floating.
[3] X = don’t care.
[4] HVCC = 1.5 V < VSELECT < VCC − 1.5 V.
[5] LOW = VSELECT < 0.5 V.
9. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
−0.3
−0.3
-
Max
Unit
V
VCC
VI
supply voltage
operating
+18
VCC + 0.3
1
input voltage
V
IORM
Tstg
repetitive peak output current
storage temperature
ambient temperature
supply voltage (short circuit)
total power dissipation
A
non-operating
operating
−55
−40
-
+150
+85
10
°C
°C
V
Tamb
VCC(sc)
Ptot
-
2.2
W
10. Thermal characteristics
Table 6.
Thermal characteristics
Symbol Parameter
Conditions
Typ
Unit
K/W
K/W
K/W
Rth(j-a)
thermal resistance from
in free air
80
junction to ambient
[1]
with heat spreader
22
Rth(j-sp)
thermal resistance from
junction to solder point
3
[1] Thermal resistance is 22 K/W with DAP soldered to 64.5 mm2 (10 in2), 28.3 g (1 oz) copper heat spreader.
11. Static characteristics
Table 7.
Static characteristics
VCC = 6 V; Tamb = 25 °C; RL = 8 Ω; VMODE = 0 V; measured in test circuit Figure 3; unless otherwise specified.
Symbol
VCC
Iq
Parameter
Conditions
operating
Min
Typ
9
Max
18
Unit
V
supply voltage
quiescent current
standby current
2.2
[1]
RL = ∞ Ω
-
-
15
-
22
mA
µA
Istb
VMODE = VCC
10
SA58637_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 25 February 2008
6 of 22
SA58637
NXP Semiconductors
2 × 2.2 W BTL audio amplifier
Table 7.
Static characteristics …continued
VCC = 6 V; Tamb = 25 °C; RL = 8 Ω; VMODE = 0 V; measured in test circuit Figure 3; unless otherwise specified.
Symbol
VO
Parameter
Conditions
Min
Typ
Max
-
Unit
V
[2]
output voltage
-
2.2
∆VO(offset)
IIB
differential output voltage offset
input bias current
-
-
-
-
-
-
-
-
-
-
-
-
50
mV
nA
nA
V
pins INL+, INR+
pins INL−, INR−
operating
-
500
500
0.5
-
VMODE
voltage on pin MODE
0
mute
1.5
VCC − 1.5
V
standby
V
CC − 0.5
VCC
20
V
IMODE
current on pin MODE
0 V < VMODE < VCC
both channels on
left channel on
right channel on
VSELECT = 0 V
-
µA
V
VSELECT
voltage on pin SELECT
1.5
VCC − 1.5
V
CC − 0.5
VCC
0.5
100
V
GND
-
V
II(SELECT)
input current on pin SELECT
µA
[1] With a load connected at the outputs the quiescent current will increase, the maximum of this increase being equal to the DC output
offset voltage divided by RL.
[2] The DC output voltage with respect to ground is approximately 0.5 × VCC
.
12. Dynamic characteristics
Table 8.
Dynamic characteristics
VCC = 6 V; Tamb = 25 °C; RL = 8 Ω; f = 1 kHz; VMODE = 0 V; measured in test circuit Figure 3; unless otherwise specified.
Symbol
Parameter
Conditions
Min
1.2
0.9
-
Typ
1.5
1.1
2.2
Max
Unit
W
Po
output power
THD+N = 10 %
THD+N = 0.5 %
-
-
-
W
THD+N = 10 %; VCC = 9 V;
application demo board
W
THD+N
total harmonic
Po = 0.5 W
-
0.15
0.3
%
distortion-plus-noise
[1]
Gv(cl)
∆Zi
closed-loop voltage gain
differential input impedance
output noise voltage
6
-
30
dB
kΩ
µV
dB
dB
µV
dB
-
100
-
[2]
[3]
[4]
[5]
Vn(o)
PSRR
-
-
-
-
-
-
100
power supply rejection ratio
1 kHz
−50
−40
-
-
100 Hz to 20 kHz
mute condition
-
VO(mute)
mute output voltage
channel separation
200
-
αcs
−40
[1] Gain of the amplifier is 2 × (R2 / R1) in test circuit of Figure 3.
[2] The noise output voltage is measured at the output in a frequency range from 20 Hz to 20 kHz (unweighted), with a source impedance
of RS = 0 Ω at the input.
[3] Power supply rejection ratio is measured at the output with a source impedance of RS = 0 Ω at the input. The ripple voltage is a
sine wave with a frequency of 1 kHz and an amplitude of 100 mV (RMS), which is applied to the positive supply rail.
[4] Power supply rejection ratio is measured at the output, with a source impedance of RS = 0 Ω at the input. The ripple voltage is a
sine wave with a frequency between 100 Hz and 20 kHz and an amplitude of 100 mV (RMS), which is applied to the positive supply rail.
[5] Output voltage in mute position is measured with an input voltage of 1 V (RMS) in a bandwidth of 20 kHz, which includes noise.
SA58637_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 25 February 2008
7 of 22
SA58637
NXP Semiconductors
2 × 2.2 W BTL audio amplifier
13. Application information
13.1 BTL application
Tamb = 25 °C, VCC = 9 V, f = 1 kHz, RL = 8 Ω, Gv = 20 dB, audio band-pass 22 Hz to
22 kHz. The single-ended input and BTL differential output diagram is shown in Figure 3.
V
R2
CC
50 kΩ
100 nF
100 µF
1 µF
R1
INL−
17
10
15
14
10 kΩ
OUTL−
16
1
INL+
V
I
C3
47 µF
R
L
OUTL+
SA58637
1 µF
R3
INR−
INR+
12
13
3
10 kΩ
OUTR−
R4
50 kΩ
11
6
V
I
SVR
R
L
MODE
OUTR+
2
SELECT
4
20
7
GND
001aah746
R2
------
R1
Gain left = 2 ×
R4
------
R3
Gain right = 2 ×
Pins 8, 9, 18 and 19 connected to ground.
Fig 3. Application diagram of SA58637 single-ended input and BTL differential output
configuration
SA58637_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 25 February 2008
8 of 22
SA58637
NXP Semiconductors
2 × 2.2 W BTL audio amplifier
14. Test information
14.1 Static characterization
The quiescent current has been measured without any load impedance (Figure 4).
Figure 6 shows three areas: operating, mute and standby. It shows that the DC switching
levels of the mute and standby respectively depends on the supply voltage level.
002aac081
002aac089
30
10
(V)
V
O
I
q
1
(mA)
−1
10
10
10
10
10
10
20
−2
−3
−4
−5
−6
(1) (2) (3)
10
0
−1
2
0
4
8
12
16
V
20
(V)
10
1
10
10
V
(V)
MODE
CC
RL = ∞ Ω
Band-pass = 22 Hz to 22 kHz.
(1) VCC = 3 V.
(2) VCC = 5 V.
(3) VCC = 12 V.
Fig 4. Quiescent current as a function of supply
voltage
Fig 5. Output voltage as a function of voltage on pin
MODE
002aac090
16
V
MODE
(V)
12
8
standby
mute
4
operating
0
0
4
8
12
16
V
(V)
CC
Fig 6. Voltage on pin MODE as a function of supply voltage
SA58637_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 25 February 2008
9 of 22
SA58637
NXP Semiconductors
2 × 2.2 W BTL audio amplifier
002aad579
20
V
SELECT
(V)
16
12
8
(4)
(3)
(5)
V
CC
(1)
(2)
4
0
0
4
8
12
16
20
V
(V)
CC
(1) Left channel on
(2) Left channel standby
(3) Right channel on
(4) Right channel standby
(5) Left channel + right channel on
Fig 7. Voltage on pin SELECT as a function of supply voltage
SA58637_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 25 February 2008
10 of 22
SA58637
NXP Semiconductors
2 × 2.2 W BTL audio amplifier
14.2 BTL dynamic characterization
The total harmonic distortion-plus-noise (THD+N) as a function of frequency (Figure 8)
was measured with a low-pass filter of 80 kHz. The value of capacitor C3 influences the
behavior of PSRR at low frequencies; increasing the value of C3 increases the
performance of PSRR.
002aac083
002aac084
10
THD+N
−60
α
cs
(dB)
(1)
(2)
(%)
−70
1
(1)
(2)
−80
−90
(3)
−1
10
−2
10
−100
2
3
4
5
2
3
4
5
10
10
10
10
10
10
10
10
10
10
f (Hz)
f (Hz)
Po = 0.5 W; Gv = 20 dB.
VCC = 6 V; VO = 2 V; RL = 8 Ω.
(1) VCC = 6 V; RL = 8 Ω.
(1) Gv = 30 dB.
(2) Gv = 20 dB.
(3) Gv = 6 dB.
(2) VCC = 7.5 V; RL = 16 Ω.
Fig 8. Total harmonic distortion-plus-noise as a
function of frequency
Fig 9. Channel separation as a function of frequency
002aac085
−20
PSRR
(dB)
(1)
(2)
−40
(3)
−60
−80
2
3
4
5
10
10
10
10
10
f (Hz)
VCC = 6 V; RS = 0 Ω; Vripple = 100 mV.
(1) Gv = 30 dB.
(2) Gv = 20 dB.
(3) Gv = 6 dB.
Fig 10. Power supply rejection ratio as a function of frequency
SA58637_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 25 February 2008
11 of 22
SA58637
NXP Semiconductors
2 × 2.2 W BTL audio amplifier
14.3 Thermal behavior
The measured thermal performance of the HVQFN20 package is highly dependent on the
configuration and size of the heat spreader on the application demo board. Data may not
be comparable between different semiconductor manufacturers because the application
demo boards and test methods are not standardized. The thermal performance of a
package for a specific application may also differ from those presented here because the
configuration of the application boards copper heat spreader may be significantly different.
NXP Semiconductors uses FR-4 type application boards with 28.3 g (1 oz) copper traces
with solder coating.
The demo board (see Figure 16) has a 28.3 g (1 oz) copper heat spreader that runs under
the IC and provides a mounting pad to solder to the die attach paddle of the HVQFN20
package. The heat spreader is symmetrical and provides a heat spreader on both top and
bottom of the PCB. The heat spreader on top and bottom side of the demo board is
connected through 2 mm diameter plated through holes. Directly under the DAP (Die
Attach Paddle), the top and bottom side of the PCB are connected by four vias. The total
top and bottom heat spreader area is 64.5 mm2 (10 in2).
The junction to ambient thermal resistance, Rth(j-a) = 22 K/W for the HVQFN20 package
when the exposed die attach paddle is soldered to a 32.3 mm2 (5 in2) area of 28.3 g (1 oz)
copper heat spreader on the demo PCB. The maximum sine wave power dissipation for
Tamb = 25 °C is:
150 – 25
= 5.7 W
--------------------
22
Thus, for Tamb = 60 °C the maximum total power dissipation is:
150 – 60
= 4.1 W
--------------------
22
The power dissipation as a function of ambient temperature curve (Figure 11) shows the
power derating profiles with ambient temperature for three sizes of heat spreaders. For a
more modest heat spreader using a 32.3 mm2 (5 in2) area on the top or bottom side of the
PCB, the Rth(j-a) is 31 K/W. When the package is not soldered to a heat spreader, the
Rth(j-a) increases to 60 K/W.
SA58637_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 25 February 2008
12 of 22
SA58637
NXP Semiconductors
2 × 2.2 W BTL audio amplifier
002aac283
6
4
2
0
(1)
(2)
P
(W)
(3)
0
40
80
120
160
(°C)
T
amb
(1) 64.5 mm2 (10 in2) heat spreader top and bottom, 28.3 g (1 oz copper).
(2) 32.3 mm2 (5 in2) heat spreader top or bottom, 28.3 g (1 oz copper).
(3) No heat spreader.
Fig 11. Power dissipation as a function of ambient temperature
The characteristics curves (Figure 12a and Figure 12b, Figure 13, Figure 14, and
Figure 15a and Figure 15b) show the room temperature performance for SA58637 using
the demo PCB shown in Figure 16. For example, Figure 12 “Power dissipation as a
function of output power” (a and b) show the performance as a function of load resistance
and supply voltage. Worst case power dissipation is shown in Figure 13. Figure 15a
shows that the part delivers typically 2.8 W per channel for THD+N = 10 % using 8 Ω load
at 9 V supply, while Figure 15b shows that the part delivers 3.3 W per channel at 12 V
supply and 16 Ω load, THD+N = 10 %.
002aac288
002aac289
3
2
1
0
3
2
1
0
(4)
P
(W)
P
(W)
(3)
(2)
(3)
(2)
(1)
(1)
0
1
2
3
0
1
2
3
4
P
(W)
P (W)
o
o
(1) VCC = 6 V.
(1) VCC = 6 V.
(2) VCC = 7.5 V.
(3) VCC = 9 V.
(2) VCC = 7.5 V.
(3) VCC = 9 V.
(4) VCC = 12 V.
a. RL = 8 Ω; f = 1 kHz; Gv = 20 dB
b. RL = 16 Ω; f = 1 kHz; Gv = 20 dB
Fig 12. Power dissipation as a function of output power
SA58637_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 25 February 2008
13 of 22
SA58637
NXP Semiconductors
2 × 2.2 W BTL audio amplifier
001aah747
002aac286
4
4
3
2
1
0
P
(W)
P
o
(W)
(3)
3
(2)
2
(1)
(2)
(3)
1
0
(1)
0
4
8
12
0
4
8
12
V
(V)
V
(V)
CC
CC
(1) RL = 4 Ω.
(2) RL = 8 Ω.
(3) RL = 16 Ω.
THD+N = 10 %; f = 1 kHz; Gv = 20 dB.
(1) RL = 4 Ω.
(2) RL = 8 Ω.
(3) RL = 16 Ω.
Fig 13. Worst case power dissipation as a function of
supply voltage
Fig 14. Output power as a function of supply voltage
002aac284
002aac285
2
2
10
10
THD+N
(%)
THD+N
(%)
(1) (2) (3) (4)
10
10
(1)
(2)
(3)
1
1
−2
−2
10
10
−3
−3
10
10
−2
−3
−2
10
1
10
10
10
1
10
P
(W)
P (W)
o
o
(1) VCC = 6 V.
(2) VCC = 7.5 V.
(3) VCC = 9 V.
(1) VCC = 6 V.
(2) VCC = 7.5 V.
(3) VCC = 9 V.
(4) VCC = 12 V.
a. RL = 8 Ω; f = 1 kHz; Gv = 20 dB
b. RL = 16 Ω; f = 1 kHz; Gv = 20 dB
Fig 15. Total harmonic distortion-plus-noise as a function of output power
SA58637_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 25 February 2008
14 of 22
SA58637
NXP Semiconductors
2 × 2.2 W BTL audio amplifier
14.4 General remarks
The frequency characteristics can be adapted by connecting a small capacitor across the
feedback resistor. To improve the immunity of HF radiation in radio circuit applications, a
small capacitor can be connected in parallel with the feedback resistor (56 kΩ); this
creates a low-pass filter.
14.5 SA58637BS PCB demo
The application demo board may be used for evaluation single-ended input, BTL
differential output configuration as shown in the schematic in Figure 3. The demo PCB
(Figure 16) is laid out for a 64.5 mm2 (10 in2) heat spreader (total of top and bottom heat
spreader area).
SA58637_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 25 February 2008
15 of 22
xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxx x x x xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xx xx
xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxx x x
xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxx
xxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxx xxx
top layer
bottom layer
SA58637BS Rev5
Audio Amplifier
VCC
100 µF
GND
OUTL−
OUTL+
10 kΩ
10 kΩ
INL−
GND VCC/2 VCC
56 kΩ
1 µF
1 µF
GND
1 µF
11 kΩ
11 kΩ
MODE
GND
47 µF
SEL
56 kΩ
VCC
1 µF
INR−
SELECT
OUTR+
OUTR−
001aah667
Fig 16. SA58637BS PCB demo
SA58637
NXP Semiconductors
2 × 2.2 W BTL audio amplifier
15. Package outline
HVQFN20: plastic thermal enhanced very thin quad flat package; no leads;
20 terminals; body 6 x 5 x 0.85 mm
SOT910-1
D
B
A
terminal 1
index area
E
A
A
1
c
detail X
e
1
1/2 e
C
y
M
M
v
C
A
B
e
b
y
C
1
w
C
7
10
L
6
11
e
E
e
2
h
1/2 e
1
16
terminal 1
index area
20
17
X
D
h
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
A
UNIT
A
1
b
c
D
D
h
E
E
e
e
1
e
2
L
v
w
y
y
1
h
max
0.05
0.00
0.4
0.3
5.1
4.9
3.15
2.85
6.1
5.9
4.15
3.85
0.65
0.40
mm
1
0.2
0.8
2.4
4
0.1
0.05 0.05
0.1
Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
MO-220
JEITA
SOT910-1
- - -
- - -
05-10-11
Fig 17. Package outline SOT910-1 (HVQFN20)
SA58637_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 25 February 2008
17 of 22
SA58637
NXP Semiconductors
2 × 2.2 W BTL audio amplifier
16. Soldering of SMD packages
This text provides a very brief insight into a complex technology. A more in-depth account
of soldering ICs can be found in Application Note AN10365 “Surface mount reflow
soldering description”.
16.1 Introduction to soldering
Soldering is one of the most common methods through which packages are attached to
Printed Circuit Boards (PCBs), to form electrical circuits. The soldered joint provides both
the mechanical and the electrical connection. There is no single soldering method that is
ideal for all IC packages. Wave soldering is often preferred when through-hole and
Surface Mount Devices (SMDs) are mixed on one printed wiring board; however, it is not
suitable for fine pitch SMDs. Reflow soldering is ideal for the small pitches and high
densities that come with increased miniaturization.
16.2 Wave and reflow soldering
Wave soldering is a joining technology in which the joints are made by solder coming from
a standing wave of liquid solder. The wave soldering process is suitable for the following:
• Through-hole components
• Leaded or leadless SMDs, which are glued to the surface of the printed circuit board
Not all SMDs can be wave soldered. Packages with solder balls, and some leadless
packages which have solder lands underneath the body, cannot be wave soldered. Also,
leaded SMDs with leads having a pitch smaller than ~0.6 mm cannot be wave soldered,
due to an increased probability of bridging.
The reflow soldering process involves applying solder paste to a board, followed by
component placement and exposure to a temperature profile. Leaded packages,
packages with solder balls, and leadless packages are all reflow solderable.
Key characteristics in both wave and reflow soldering are:
• Board specifications, including the board finish, solder masks and vias
• Package footprints, including solder thieves and orientation
• The moisture sensitivity level of the packages
• Package placement
• Inspection and repair
• Lead-free soldering versus SnPb soldering
16.3 Wave soldering
Key characteristics in wave soldering are:
• Process issues, such as application of adhesive and flux, clinching of leads, board
transport, the solder wave parameters, and the time during which components are
exposed to the wave
• Solder bath specifications, including temperature and impurities
SA58637_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 25 February 2008
18 of 22
SA58637
NXP Semiconductors
2 × 2.2 W BTL audio amplifier
16.4 Reflow soldering
Key characteristics in reflow soldering are:
• Lead-free versus SnPb soldering; note that a lead-free reflow process usually leads to
higher minimum peak temperatures (see Figure 18) than a SnPb process, thus
reducing the process window
• Solder paste printing issues including smearing, release, and adjusting the process
window for a mix of large and small components on one board
• Reflow temperature profile; this profile includes preheat, reflow (in which the board is
heated to the peak temperature) and cooling down. It is imperative that the peak
temperature is high enough for the solder to make reliable solder joints (a solder paste
characteristic). In addition, the peak temperature must be low enough that the
packages and/or boards are not damaged. The peak temperature of the package
depends on package thickness and volume and is classified in accordance with
Table 9 and 10
Table 9.
SnPb eutectic process (from J-STD-020C)
Package thickness (mm) Package reflow temperature (°C)
Volume (mm3)
< 350
≥ 350
220
< 2.5
235
220
≥ 2.5
220
Table 10. Lead-free process (from J-STD-020C)
Package thickness (mm) Package reflow temperature (°C)
Volume (mm3)
< 350
260
350 to 2000
> 2000
260
< 1.6
260
250
245
1.6 to 2.5
> 2.5
260
245
250
245
Moisture sensitivity precautions, as indicated on the packing, must be respected at all
times.
Studies have shown that small packages reach higher temperatures during reflow
soldering, see Figure 18.
SA58637_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 25 February 2008
19 of 22
SA58637
NXP Semiconductors
2 × 2.2 W BTL audio amplifier
maximum peak temperature
= MSL limit, damage level
temperature
minimum peak temperature
= minimum soldering temperature
peak
temperature
time
001aac844
MSL: Moisture Sensitivity Level
Fig 18. Temperature profiles for large and small components
For further information on temperature profiles, refer to Application Note AN10365
“Surface mount reflow soldering description”.
17. Abbreviations
Table 11. Abbreviations
Acronym
BTL
Description
Bridge-Tied Load
CMOS
DAP
ESD
HF
Complementary Metal Oxide Semiconductor
Die Attach Paddle
ElectroStatic Discharge
High-Frequency
NPN
PCB
PNP
RMS
SE
Negative-Positive-Negative
Printed-Circuit Board
Positive-Negative-Positive
Root Mean Squared
Single-Ended
THD
Total Harmonic Distortion
18. Revision history
Table 12. Revision history
Document ID
Release date
20080225
Data sheet status
Change notice
Supersedes
SA58637_1
Product data sheet
-
-
SA58637_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 25 February 2008
20 of 22
SA58637
NXP Semiconductors
2 × 2.2 W BTL audio amplifier
19. Legal information
19.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
19.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
19.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Quick reference data — The Quick reference data is an extract of
the product data given in the Limiting values and Characteristics sections of
this document, and as such is not complete, exhaustive or legally binding.
19.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Suitability for use — NXP Semiconductors products are not
designed, authorized or warranted to be suitable for use in medical, military,
aircraft, space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
20. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
SA58637_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 25 February 2008
21 of 22
SA58637
NXP Semiconductors
2 × 2.2 W BTL audio amplifier
21. Contents
1
2
3
4
5
6
General description . . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 3
7
7.1
7.2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 4
Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 4
8
Functional description . . . . . . . . . . . . . . . . . . . 5
Power amplifier . . . . . . . . . . . . . . . . . . . . . . . . . 5
Mode select pin (MODE) . . . . . . . . . . . . . . . . . 5
SELECT output configuration . . . . . . . . . . . . . . 5
8.1
8.2
8.3
9
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 6
Thermal characteristics. . . . . . . . . . . . . . . . . . . 6
Static characteristics. . . . . . . . . . . . . . . . . . . . . 6
Dynamic characteristics . . . . . . . . . . . . . . . . . . 7
Application information. . . . . . . . . . . . . . . . . . . 8
BTL application. . . . . . . . . . . . . . . . . . . . . . . . . 8
10
11
12
13
13.1
14
Test information. . . . . . . . . . . . . . . . . . . . . . . . . 9
Static characterization . . . . . . . . . . . . . . . . . . . 9
BTL dynamic characterization . . . . . . . . . . . . 11
Thermal behavior . . . . . . . . . . . . . . . . . . . . . . 12
General remarks. . . . . . . . . . . . . . . . . . . . . . . 15
SA58637BS PCB demo . . . . . . . . . . . . . . . . . 15
14.1
14.2
14.3
14.4
14.5
15
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 17
16
Soldering of SMD packages . . . . . . . . . . . . . . 18
Introduction to soldering . . . . . . . . . . . . . . . . . 18
Wave and reflow soldering . . . . . . . . . . . . . . . 18
Wave soldering . . . . . . . . . . . . . . . . . . . . . . . . 18
Reflow soldering . . . . . . . . . . . . . . . . . . . . . . . 19
16.1
16.2
16.3
16.4
17
18
Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 20
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 20
19
Legal information. . . . . . . . . . . . . . . . . . . . . . . 21
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 21
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 21
19.1
19.2
19.3
19.4
20
21
Contact information. . . . . . . . . . . . . . . . . . . . . 21
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2008.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 25 February 2008
Document identifier: SA58637_1
相关型号：
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