SA58632BS,118_技术文档

SA58632

2 × 2.2 W BTL audio amplifier

Rev. 02 — 4 March 2010

Product data sheet

1. General description

The SA58632 is a two-channel audio amplifier in an HVQFN20 package. It provides

power output of 2.2 W per channel with an 8 Ω load at 9 V supply. The internal circuit is

comprised of two BTL (Bridge-Tied Load) amplifiers with a complementary PNP-NPN

output stage and standby/mute logic. The SA58632 is housed in a 20-pin HVQFN

package, which has an exposed die attach paddle enabling reduced thermal resistance

and increased power dissipation.

2. Features

Low junction-to-ambient thermal resistance using exposed die attach paddle

Gain can be fixed with external resistors from 6 dB to 30 dB

Standby mode controlled by CMOS-compatible levels

Low standby current < 10 μA

No switch-on/switch-off plops

High power supply ripple rejection: 50 dB minimum

ElectroStatic Discharge (ESD) protection

Output short-circuit to ground protection

Thermal shutdown protection

3. Applications

Professional and amateur mobile radio

Portable consumer products: toys and games

Personal computer remote speakers

SA58632

NXP Semiconductors

2 × 2.2 W BTL audio amplifier

4. Quick reference data

Table 1.

Quick reference data

V_CC= 6 V; T_amb= 25 °C; R_L= 8 Ω; V_MODE= 0 V; measured in test circuit Figure 3; unless otherwise

specified.

Symbol Parameter

Conditions

operating

Min

2.2

-

Typ

9

Max

18

22

10

-

Unit

V

V_CC

I_q

supply voltage

quiescent current

standby current

output power

[1]

R_L= ∞ Ω

15

-

mA

μA

W

I_stb

P_o

V_MODE= V_CC

THD+N = 10 %

THD+N = 0.5 %

-

1.2

0.9

-

1.5

1.1

2.2

-

W

THD+N = 10 %;

V_CC= 9 V

-

W

THD+N

PSRR

total harmonic

distortion-plus-noise

P_o= 0.5 W

-

0.15

0.3

%

[2]

[3]

power supply rejection ratio

50

40

-

dB

[1] With a load connected at the outputs the quiescent current will increase, the maximum of this increase

being equal to the DC output offset voltage divided by R_L.

[2] Supply voltage ripple rejection is measured at the output with a source impedance of R_s= 0 Ω at the input.

The ripple voltage is a sine wave with a frequency of 1 kHz and an amplitude of 100 mV (RMS), which is

applied to the positive supply rail.

[3] Supply voltage ripple rejection is measured at the output, with a source impedance of R_s= 0 Ω at the input.

The ripple voltage is a sine wave with a frequency between 100 Hz and 20 kHz and an amplitude of

100 mV (RMS), which is applied to the positive supply rail.

5. Ordering information

Table 2.

Ordering information

Type number Package

Name

Description

Version

SA58632BS HVQFN20 plastic thermal enhanced very thin quad flat package;

SOT910-1

no leads; 20 terminals; body 6 × 5 × 0.85 mm

SA58632_2

Product data sheet

Rev. 02 — 4 March 2010

2 of 28

SA58632

NXP Semiconductors

2 × 2.2 W BTL audio amplifier

6. Block diagram

V

CCL

V

CCR

17

10

SA58632

16

15

14

INL−

INL+

OUTL−

R

V

CCL

R

20 kΩ

1

OUTL+

20 kΩ

STANDBY/MUTE LOGIC

11

12

13

INR−

INR+

OUTR−

R

V

CCR

R

20 kΩ

6

OUTR+

3

SVR

20 kΩ

2

4

MODE

BTL/SE

STANDBY/MUTE LOGIC

5

8

9

19

18

20

7

n.c.

GND GND GND GND LGND RGND

002aac078

Fig 1. Block diagram of SA58632

SA58632_2

Product data sheet

Rev. 02 — 4 March 2010

3 of 28

SA58632

NXP Semiconductors

2 × 2.2 W BTL audio amplifier

7. Pinning information

7.1 Pinning

terminal 1

index area

OUTL+

MODE

SVR

1

2

3

4

5

6

16 OUTL−

15 INL−

14 INL+

13 INR+

12 INR−

11 OUTR−

SA58632BS

BTL/SE

n.c.

OUTR+

002aac079

Transparent top view

Fig 2. Pin configuration for HVQFN20

7.2 Pin description

Table 3.

Symbol

Pin description

Description

OUTL+

MODE

SVR

1

positive loudspeaker terminal, left channel

operating mode select (standby, mute, operating)

half supply voltage, decoupling ripple rejection

BTL loudspeaker or SE headphone operation

not connected

2

3

BTL/SE

n.c.

4

5

OUTR+

RGND

GND

6

positive loudspeaker terminal, right channel

ground, right channel

ground^[1]

7

8, 9, 18, 19

V_CCR

10

11

12

13

14

15

16

17

20

supply voltage; right channel

OUTR−

INR−

negative loudspeaker terminal, right channel

negative input, right channel

INR+

positive input, right channel

INL+

positive input, left channel

INL−

negative input, left channel

OUTL−

V_CCL

negative output terminal, left channel

supply voltage, left channel

LGND

ground, left channel

[1] Pins 8, 9, 18 and 19 are connected to the lead frame and also to the substrate. They may be kept floating.

When connected to the ground plane, the PCB can be used as heatsink.

SA58632_2

Product data sheet

Rev. 02 — 4 March 2010

4 of 28

SA58632

NXP Semiconductors

2 × 2.2 W BTL audio amplifier

8. Functional description

The SA58632 is a two-channel BTL audio amplifier capable of delivering 2 × 1.5 W output

power to an 8 Ω load at THD+N = 10 % using a 6 V power supply. It is also capable of

delivering 2 × 2.2 W output power to an 8 Ω load at THD+N = 10 % using a 9 V power

supply. Using the MODE pin, the device can be switched to standby and mute condition.

The device is protected by an internal thermal shutdown protection mechanism. The gain

can be set within a range of 6 dB to 30 dB by external feedback resistors.

8.1 Power amplifier

The power amplifier is a Bridge-Tied Load (BTL) amplifier with a complementary

PNP-NPN output stage. The voltage loss on the positive supply line is the saturation

voltage of a PNP power transistor, on the negative side the saturation voltage of an NPN

power transistor. The total voltage loss is < 1 V. With a supply voltage of 6 V and an 8 Ω

loudspeaker, an output power of 1.5 W can be delivered to the load, and with a 9 V supply

voltage and an 8 Ω loudspeaker an output power of 2.2 W can be delivered.

8.2 Mode select pin (MODE)

The device is in Standby mode (with a very low current consumption) if the voltage at the

MODE pin is greater than V_CC− 0.5 V, or if this pin is floating. At a MODE voltage in the

range between 1.5 V and V_CC− 1.5 V the amplifier is in a mute condition. The mute

condition is useful to suppress plop noise at the output, caused by charging of the input

capacitor. The device is in Active mode if the MODE pin is grounded or less than 0.5 V

(see Figure 6).

8.3 BTL/SE output configuration

To invoke the BTL configuration (see Figure 3), the BTL/SE pin is taken to logic HIGH or

not connected. The output differentially drives the speakers, so there is no need for

coupling capacitors. The headphone can be connected to the amplifier negative outputs

using a coupling capacitor for each channel. The headphone common ground is

connected to the amplifier ground.

To invoke the Single-Ended (SE) configuration (see Figure 15), the BTL/SE pin is taken to

logic LOW or connected to ground. The positive outputs are muted with a DC level of

0.5V_CC. Using a coupling capacitor for each channel, speakers can be connected to the

amplifier negative outputs. The speaker common ground is connected to the amplifier

ground. Headphones can be connected to the negative outputs without using output

coupling capacitors. The headphone common ground pin is connected to one of the

amplifier positive output pins.

SA58632_2

Product data sheet

Rev. 02 — 4 March 2010

5 of 28

SA58632

NXP Semiconductors

2 × 2.2 W BTL audio amplifier

9. Limiting values

Table 4.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter

Conditions

Min

−0.3

-

Max

+18

Unit

V

V_CC

V_I

supply voltage

operating

input voltage

V_CC+ 0.3

1

V

I_ORM

T_stg

T_amb

V_P(sc)

P_tot

repetitive peak output current

storage temperature

ambient temperature

short-circuit supply voltage

total power dissipation

A

non-operating

operating

−55

−40

-

+150

+85

°C

V

10

HVQFN20

-

2.2

W

10. Thermal characteristics

Table 5.

Thermal characteristics

Symbol Parameter

Conditions

Typ

80

22

3

Unit

R_th(j-a)

thermal resistance from junction to ambient

in free air

K/W

64.5 mm²(10 square inch) heat spreader

[1]

R_th(j-sp)

thermal resistance from junction to solder point

[1] Thermal resistance is 22 K/W with DAP soldered to 64.5 mm²(10 square inch), 1 ounce copper heat spreader.

11. Static characteristics

Table 6.

Static characteristics

V_CC= 6 V; T_amb= 25 °C; R_L= 8 Ω; V_MODE= 0 V; measured in test circuit Figure 3; unless otherwise specified.

Symbol

V_CC

Parameter

Conditions

operating

Min

Typ

Max

18

Unit

V

supply voltage

2.2

9

[1]

[2]

I_q

quiescent current

standby current

R_L= ∞ Ω

-

15

22

mA

μA

V

I_stb

V_MODE= V_CC

-

10

V_O

output voltage

-

2.2

-

ΔV_O(offset)

I_IB

differential output voltage offset

input bias current

-

50

mV

nA

V

pins INL+, INR+

pins INL−, INR−

operating

-

500

0.5

-

V_MODE

voltage on pin MODE

0

mute

1.5

V_CC− 1.5

V_CC

20

V

standby

V_CC− 0.5

V

I_MODE

V_I(SE)

V_I(BTL)

I_I(SE)

current on pin MODE

0 V < V_MODE< V_CC

single-ended (SE)

BTL

-

μA

V

input voltage on pin BTL/SE

input current on pin BTL/SE

0

0.6

0.42 × V_CC

V_CC

100

V

V_I(SE)= 0 V; pin connected

to ground in SE mode

-

μA

[1] With a load connected at the outputs the quiescent current will increase, the maximum of this increase being equal to the DC output

offset voltage divided by R_L.

SA58632_2

Product data sheet

Rev. 02 — 4 March 2010

6 of 28

SA58632

NXP Semiconductors

2 × 2.2 W BTL audio amplifier

[2] The DC output voltage with respect to ground is approximately 0.5 × V_CC

.

12. Dynamic characteristics

Table 7.

Dynamic characteristics

V_CC= 6 V; T_amb= 25 °C; R_L= 8 Ω; f = 1 kHz; V_MODE= 0 V; measured in test circuit Figure 3; unless otherwise specified.

Symbol

Parameter

Conditions

Min

1.2

0.9

-

Typ

1.5

1.1

2.2

Max

Unit

W

P_o

output power

THD+N = 10 %

THD+N = 0.5 %

-

W

THD+N = 10 %; V_CC= 9 V;

application demo board

W

THD+N

total harmonic

P_o= 0.5 W

-

0.15

0.3

%

distortion-plus-noise

[1]

G_v(cl)

ΔZ_i

closed-loop voltage gain

differential input impedance

output noise voltage

6

-

30

dB

kΩ

μV

dB

μV

dB

-

100

-

[2]

[3]

[4]

[5]

V_n(o)

PSRR

-

100

power supply rejection ratio

50

40

-

V_O(mute)

mute output voltage

channel separation

mute condition

200

-

α_cs

40

[1] Gain of the amplifier is 2 × (R2 / R1) in test circuit of Figure 3.

[2] The output noise voltage is measured at the output in a frequency range from 20 Hz to 20 kHz (unweighted), with a source impedance

of R_s= 0 Ω at the input.

[3] Supply voltage ripple rejection is measured at the output with a source impedance of R_s= 0 Ω at the input. The ripple voltage is a

sine wave with a frequency of 1 kHz and an amplitude of 100 mV (RMS), which is applied to the positive supply rail.

[4] Supply voltage ripple rejection is measured at the output, with a source impedance of R_s= 0 Ω at the input. The ripple voltage is a

sine wave with a frequency between 100 Hz and 20 kHz and an amplitude of 100 mV (RMS), which is applied to the positive supply rail.

[5] Output voltage in mute position is measured with an input voltage of 1 V (RMS) in a bandwidth of 20 kHz, which includes noise.

SA58632_2

Product data sheet

Rev. 02 — 4 March 2010

7 of 28

SA58632

NXP Semiconductors

2 × 2.2 W BTL audio amplifier

13. Application information

13.1 BTL application

T_amb= 25 °C, V_CC= 9 V, f = 1 kHz, R_L= 8 Ω, G_v= 20 dB, audio band-pass 22 Hz to

22 kHz. The BTL diagram is shown in Figure 3.

V

CC

R2

50 kΩ

100 nF

100 μF

1 μF

R1

INL−

17

10

15

14

10 kΩ

OUTL−

16

1

INL+

V

IL

C3

47 μF

R

L

OUTL+

OUTR−

R4

50 kΩ

SA58632

1 μF

R3

10 kΩ

INR−

INR+

12

13

3

OUTR−

11

6

V

IR

SVR

R

L

MODE

BTL/SE

OUTR+

2

4

20

7

GND

002aac080

R2

R1

------

Gain left = 2 ×

R4

------

Gain right = 2 ×

R3

Pins 8, 9, 18 and 19 connected to ground.

Fig 3. Application diagram of SA58632 BTL differential output configuration

SA58632_2

Product data sheet

Rev. 02 — 4 March 2010

8 of 28

SA58632

NXP Semiconductors

2 × 2.2 W BTL audio amplifier

14. Test information

14.1 Static characterization

The quiescent current has been measured without any load impedance (Figure 4).

Figure 6 shows three areas: operating, mute and standby. It shows that the DC switching

levels of the mute and standby respectively depends on the supply voltage level.

002aac081

002aac089

30

10

(V)

V

O

I

q

1

(mA)

−1

10

20

−2

−3

−4

−5

−6

(1) (2) (3)

10

0

−1

2

0

4

8

12

16

V

20

(V)

10

1

10

V

MODE

(V)

CC

R_L= ∞ Ω

Band-pass = 22 Hz to 22 kHz.

(1) V_CC= 3 V.

(2) V_CC= 5 V.

(3) V_CC= 12 V.

Fig 4. I_qversus V_CC

Fig 5. V_Oversus V_MODE

002aac090

16

V

MODE

(V)

12

8

standby

mute

4

operating

0

4

8

12

16

V

(V)

CC

Fig 6. V_MODEversus V_CC

SA58632_2

Product data sheet

Rev. 02 — 4 March 2010

9 of 28

SA58632

NXP Semiconductors

2 × 2.2 W BTL audio amplifier

14.2 BTL dynamic characterization

The total harmonic distortion-plus-noise (THD+N) as a function of frequency (Figure 7)

was measured with a low-pass filter of 80 kHz. The value of capacitor C2 influences the

behavior of PSRR at low frequencies; increasing the value of C2 increases the

performance of PSRR.

002aac083

002aac084

10

THD+N

−60

α

cs

(dB)

(1)

(2)

(%)

−70

1

(1)

(2)

−80

−90

(3)

−1

10

−2

10

−100

2

3

4

5

2

3

4

5

10

f (Hz)

P_o= 0.5 W; G_v= 20 dB.

V

_CC= 6 V; V_O= 2 V; R_L= 8 Ω.

(1) V_CC= 6 V; R_L= 8 Ω.

(1) G_v= 30 dB.

(2) G_v= 20 dB.

(3) G_v= 6 dB.

(2) V_CC= 7.5 V; R_L= 16 Ω.

Fig 7. THD+N versus frequency

Fig 8. Channel separation versus frequency

002aac085

−20

PSRR

(dB)

(1)

(2)

−40

−60

−80

(3)

2

3

4

5

10

f (Hz)

V_CC= 6 V; R_s= 0 Ω; V_ripple= 100 mV.

(1) G_v= 30 dB.

(2) G_v= 20 dB.

(3) G_v= 6 dB.

Fig 9. PSRR versus frequency

SA58632_2

Product data sheet

Rev. 02 — 4 March 2010

10 of 28

SA58632

NXP Semiconductors

2 × 2.2 W BTL audio amplifier

14.3 Thermal behavior

The measured thermal performance of the HVQFN20 package is highly dependent on the

configuration and size of the heat spreader on the application demo board. Data may not

be comparable between different semiconductors manufacturers because the application

demo boards and test methods are not standardized. Also, the thermal performance of

packages for a specific application may be different than presented here, because of the

configuration of the copper heat spreader of the application boards may be significantly

different.

NXP Semiconductors uses FR-4 type application boards with 1 ounce copper traces with

solder coating.

The demo board (see Figure 23) has a 1 ounce copper heat spreader that runs under the

IC and provides a mounting pad to solder to the die attach paddle of the HVQFN20

package. The heat spreader is symmetrical and provides a heat spreader on both top and

bottom of the PCB. The heat spreader on top and bottom side of the demo board is

connected through 2 mm diameter plated through holes. Directly under the DAP (Die

Attach Paddle), the top and bottom side of the PCB are connected by four vias. The total

top and bottom heat spreader area is 64.5 mm²(10 in²).

The junction to ambient thermal resistance, R_th(j-a)= 22 K/W for the HVQFN20 package

when the exposed die attach paddle is soldered to 5 square inch area of 1 ounce copper

heat spreader on the demo PCB. The maximum sine wave power dissipation for

T_amb= 25 °C is given in Equation 1:

150 – 25

= 5.7 W

(1)

(2)

--------------------

22

Thus, for T_amb= 60 °C the maximum total power dissipation is given in Equation 2:

150 – 60

= 4.1 W

--------------------

22

The power dissipation versus ambient temperature curve (Figure 10) shows the power

derating profiles with ambient temperature for three sizes of heat spreaders. For a more

modest heat spreader using 5 square inch area on the top or bottom side of the PCB, the

R

_th(j-a)is 31 K/W. When the package is not soldered to a heat spreader, the R_th(j-a)

increases to 60 K/W.

SA58632_2

Product data sheet

Rev. 02 — 4 March 2010

11 of 28

SA58632

NXP Semiconductors

2 × 2.2 W BTL audio amplifier

002aac283

6

4

2

0

(1)

(2)

P

(W)

(3)

0

40

80

120

160

(°C)

T

amb

(1) 64.5 mm²heat spreader top and bottom (1 ounce copper).

(2) 32.3 mm²heat spreader top or bottom (1 ounce copper).

(3) No heat spreader.

Fig 10. Power dissipation versus ambient temperature

The characteristics curves (Figure 11a and Figure 11b, Figure 12, Figure 13a and

Figure 13b, and Figure 14) show the room temperature performance for SA58632 using

the demo PCB shown in Figure 23. For example, Figure 11 “Power dissipation versus

output power” (a and b) show the performance as a function of load resistance and supply

voltage. Worst case power dissipation is shown in Figure 12. Figure 13a shows that the

part delivers typically 2.8 W per channel for THD+N = 10 % using 8 Ω load at 9 V supply,

while Figure 13b shows that the part delivers 3.3 W per channel at 12 V supply and 16 Ω

load, THD+N = 10 %.

SA58632_2

Product data sheet

Rev. 02 — 4 March 2010

12 of 28

SA58632

NXP Semiconductors

2 × 2.2 W BTL audio amplifier

002aac288

002aac289

3

2

1

0

(4)

P

(W)

P

(W)

(3)

2

(2)

(3)

(2)

1

(1)

0

1

2

3

0

1

2

3

4

P

(W)

P (W)

o

(1) V_CC= 6 V.

(2) V_CC= 7.5 V.

(3) V_CC= 9 V.

(1) V_CC= 6 V.

(2) V_CC= 7.5 V.

(3) V_CC= 9 V.

(4) V_CC= 12 V.

a. R_L= 8 Ω; f = 1 kHz; G_v= 20 dB

b. R_L= 16 Ω; f = 1 kHz; G_v= 20 dB

Fig 11. Power dissipation versus output power

002aac287

4

P

o

(W)

3

2

1

0

(1)

(2)

(3)

0

4

8

12

V

CC

(V)

(1) R_L= 4 Ω.

(2) R_L= 8 Ω.

(3) R_L= 16 Ω.

Fig 12. Worst case power dissipation versus V_CC

SA58632_2

Product data sheet

Rev. 02 — 4 March 2010

13 of 28

SA58632

NXP Semiconductors

2 × 2.2 W BTL audio amplifier

002aac284

002aac285

2

10

THD+N

(%)

THD+N

(%)

(1) (2) (3) (4)

10

1

(1)

(2)

(3)

1

−2

10

−3

10

−3

10

−2

−3

−2

10

1

10

1

10

P

o

(W)

P (W)

o

(1) V_CC= 6 V.

(2) V_CC= 7.5 V.

(3) V_CC= 9 V.

(1) V_CC= 6 V.

(2) V_CC= 7.5 V.

(3) V_CC= 9 V.

(4) V_CC= 12 V.

a. R_L= 8 Ω; f = 1 kHz; G_v= 20 dB

b. R_L= 16 Ω; f = 1 kHz; G_v= 20 dB

Fig 13. THD+N versus output power

002aac286

4

P

o

(W)

(3)

3

2

1

0

(2)

(1)

0

4

8

12

V

CC

(V)

THD+N = 10 %; f = 1 kHz; G_v= 20 dB.

(1) R_L= 4 Ω.

(2) R_L= 8 Ω.

(3) R_L= 16 Ω.

Fig 14. Output power versus V_CC

SA58632_2

Product data sheet

Rev. 02 — 4 March 2010

14 of 28

SA58632

NXP Semiconductors

2 × 2.2 W BTL audio amplifier

14.4 Single-ended application

T_amb= 25 °C; V_CC= 7.5 V; f = 1 kHz; R_L= 8 Ω; G_v= 20 dB; audio band-pass 20 Hz to

20 kHz.

The single-ended application diagram is shown in Figure 15.

V

CC

R2

100 kΩ

100 nF

100 μF

1 μF

R1

INL−

17

10

15

14

C4

10 kΩ

OUTL−

16

1

INL+

V

470 μF

IL

C3

47 μF

R

= 8 Ω

L

OUTL+

OUTR−

R4

100 kΩ

SA58632

1 μF

R3

10 kΩ

INR−

INR+

12

13

3

C5

OUTR−

11

6

V

470 μF

IR

SVR

R

= 8 Ω

L

MODE

BTL/SE

OUTR+

2

4

20

7

GND

002aac091

R2

Gain left =

------

R1

R4

R3

Gain right =

------

Pins 8, 9, 18 and 19 connected to ground.

Fig 15. SE application circuit configuration

If the BTL/SE pin is to ground, the positive outputs (OUTL+, OUTR+) will be in mute

condition with a DC level of 0.5V_CC. When a headphone is used (R_L> 25 Ω) the SE

headphone application can be used without coupling capacitors by placing the load

between negative output and one of the positive outputs (for example, pin 1) as the

common pin.

Increasing the value of the tantalum or electrolytic capacitor C3 will result in a better

channel separation. Because the positive output is not designed for high output current

(2 × I_O) at the load impedance (< 16 Ω), the SE application with output capacitors

connected to ground is advised. The capacitor value of C4/C5 in combination with the

load impedance determines the low frequency behavior. The total harmonic

distortion-plus-noise as a function of frequency was measured with a low-pass filter of

80 kHz. The value of the capacitor C3 influences the behavior of the PSRR at low

frequencies; increasing the value of C3 increases the performance of PSRR.

SA58632_2

Product data sheet

Rev. 02 — 4 March 2010

15 of 28

SA58632

NXP Semiconductors

2 × 2.2 W BTL audio amplifier

002aac290

002aac291

2

10

THD+N

(%)

THD+N

(%)

(1) (2) (3)

10

1

(1) (2)

(3)

1

−1

10

−1

10

−2

10

−2

10

−2

−1

−2

−1

10

1

10

1

10

P

o

(W)

P (W)

o

(1) V_CC= 7.5 V.

(2) V_CC= 9 V.

(3) V_CC= 12 V.

(1) V_CC= 9 V.

(2) V_CC= 12 V.

(3) V_CC= 15 V.

a. R_L= 4 Ω; f = 1 kHz; G_v= 10 dB

b. R_L= 8 Ω; f = 1 kHz; G_v= 10 dB

002aac292

2

10

THD+N

(%)

(1) (2) (3)

10

1

−1

10

−2

10

−2

−1

10

1

10

P

o

(W)

(1) V_CC= 9 V.

(2) V_CC= 12 V.

(3) V_CC= 15 V.

c. R_L= 16 Ω; f = 1 kHz; G_v= 10 dB

Fig 16. THD+N versus output power

SA58632_2

Product data sheet

Rev. 02 — 4 March 2010

16 of 28

SA58632

NXP Semiconductors

2 × 2.2 W BTL audio amplifier

002aac093

002aac094

10

−20

α

cs

(dB)

THD+N

(%)

(1)

(2)

−40

1

−60

−80

−1

(1)

(2)

10

(3)

(4)

(5)

(3)

2

−2

−100

3

4

5

2

3

4

5

10

f (Hz)

P_o= 0.5 W; G_v= 20 dB.

V_o= 1 V; G_v= 20 dB.

(1) V_CC= 7.5 V; R_L= 4 Ω.

(2) V_CC= 9 V; R_L= 8 Ω.

(3) V_CC= 12 V; R_L= 16 Ω.

(1) V_CC= 5 V; R_L= 32 Ω, to buffer.

(2) V_CC= 7.5 V; R_L= 4 Ω.

(3) V_CC= 9 V; R_L= 8 Ω.

(4) V_CC= 12 V; R_L= 16 Ω.

(5) V_CC= 5 V; R_L= 32 Ω.

Fig 17. THD+N versus frequency

Fig 18. Channel separation versus frequency

002aac095

002aac096

−20

2.0

o

P

PSRR

(dB)

(W)

1.6

−40

(1)

(2)

(3)

1.2

0.8

0.4

0

(1)

(2)

−60

(3)

−80

2

3

4

5

10

0

4

8

12

16

f (Hz)

V

CC

(V)

R_s= 0 Ω; V_ripple= 100 mV.

(1) G_v= 24 dB.

THD+N = 10 %.

(1) R_L= 4 Ω.

(2) R_L= 8 Ω.

(3) R_L= 16 Ω.

(2) G_v= 20 dB.

(3) G_v= 0 dB.

Fig 19. PSRR versus frequency

Fig 20. P_oversus V_CC

SA58632_2

Product data sheet

Rev. 02 — 4 March 2010

17 of 28

SA58632

NXP Semiconductors

2 × 2.2 W BTL audio amplifier

002aac097

4

3

2

1

0

P

(W)

(2)

(1)

(3)

0

4

8

12

16

V

CC

(V)

THD+N = 10 %.

(1) R_L= 4 Ω.

(2) R_L= 8 Ω.

(3) R_L= 16 Ω.

Fig 21. Worst case power dissipation versus V_CC

SA58632_2

Product data sheet

Rev. 02 — 4 March 2010

18 of 28

SA58632

NXP Semiconductors

2 × 2.2 W BTL audio amplifier

002aac293

002aac294

3

2

1

0

P

(W)

P

(W)

(3)

2

1

0

(2)

(1)

(2)

(1)

0

0.4

0.8

1.2

1.6

0

0.8

1.6

2.4

P

(W)

P (W)

o

(1) V_CC= 7.5 V.

(2) V_CC= 9 V.

(3) V_CC= 12 V.

(1) V_CC= 9 V.

(2) V_CC= 12 V.

(3) V_CC= 15 V.

a. R_L= 4 Ω; f = 1 kHz; G_v= 10 dB

b. R_L= 8 Ω; f = 1 kHz; G_v= 10 dB

002aac295

1.6

P

(W)

(3)

1.2

0.8

0.4

0

(2)

(1)

0

0.4

0.8

1.2

1.6

P

o

(W)

(1) V_CC= 9 V.

(2) V_CC= 12 V.

(3) V_CC= 15 V.

c. R_L= 16 Ω; f = 1 kHz; G_v= 10 dB

Fig 22. Power dissipation versus output power

14.5 General remarks

The frequency characteristics can be adapted by connecting a small capacitor across the

feedback resistor. To improve the immunity of HF radiation in radio circuit applications, a

small capacitor can be connected in parallel with the feedback resistor (56 kΩ); this

creates a low-pass filter.

14.6 SA58632BS PCB demo

The application demo board may be used for evaluation in either BTL or SE configuration

as shown in the schematics in Figure 3 and Figure 15. The demo PCB is laid out for a

64.5 mm²(10 in²) heat spreader (total of top and bottom heat spreader area).

SA58632_2

Product data sheet

Rev. 02 — 4 March 2010

19 of 28

SA58632

NXP Semiconductors

2 × 2.2 W BTL audio amplifier

15. Package outline

HVQFN20: plastic thermal enhanced very thin quad flat package; no leads;

20 terminals; body 6 x 5 x 0.85 mm

SOT910-1

D

B

A

terminal 1

index area

E

A

1

c

detail X

e

1

1/2 e

C

y

M

v

w

C

A

B

e

b

y

C

1

7

10

L

6

11

e

E

h

e

2

1/2 e

1

16

terminal 1

index area

20

17

X

D

h

0

2.5

5 mm

scale

DIMENSIONS (mm are the original dimensions)

A

UNIT

A

1

b

c

D

h

E

e

1

e

2

L

v

w

y

1

h

max

0.05

0.00

0.4

0.3

5.1

4.9

3.15

2.85

6.1

5.9

4.15

3.85

0.65

0.40

mm

1

0.2

0.8

2.4

4

0.1

0.05 0.05

0.1

Note

1. Plastic or metal protrusions of 0.25 mm maximum per side are not included

REFERENCES

OUTLINE

VERSION

EUROPEAN

PROJECTION

ISSUE DATE

IEC

JEDEC

MO-220

JEITA

SOT910-1

- - -

05-10-11

Fig 24. Package outline SOT910-1 (HVQFN20)

SA58632_2

Product data sheet

Rev. 02 — 4 March 2010

21 of 28

SA58632

NXP Semiconductors

2 × 2.2 W BTL audio amplifier

16. Soldering of SMD packages

This text provides a very brief insight into a complex technology. A more in-depth account

of soldering ICs can be found in Application Note AN10365 “Surface mount reflow

soldering description”.

16.1 Introduction to soldering

Soldering is one of the most common methods through which packages are attached to

Printed Circuit Boards (PCBs), to form electrical circuits. The soldered joint provides both

the mechanical and the electrical connection. There is no single soldering method that is

ideal for all IC packages. Wave soldering is often preferred when through-hole and

Surface Mount Devices (SMDs) are mixed on one printed wiring board; however, it is not

suitable for fine pitch SMDs. Reflow soldering is ideal for the small pitches and high

densities that come with increased miniaturization.

16.2 Wave and reflow soldering

Wave soldering is a joining technology in which the joints are made by solder coming from

a standing wave of liquid solder. The wave soldering process is suitable for the following:

• Through-hole components

• Leaded or leadless SMDs, which are glued to the surface of the printed circuit board

Not all SMDs can be wave soldered. Packages with solder balls, and some leadless

packages which have solder lands underneath the body, cannot be wave soldered. Also,

leaded SMDs with leads having a pitch smaller than ~0.6 mm cannot be wave soldered,

due to an increased probability of bridging.

The reflow soldering process involves applying solder paste to a board, followed by

component placement and exposure to a temperature profile. Leaded packages,

packages with solder balls, and leadless packages are all reflow solderable.

Key characteristics in both wave and reflow soldering are:

• Board specifications, including the board finish, solder masks and vias

• Package footprints, including solder thieves and orientation

• The moisture sensitivity level of the packages

• Package placement

• Inspection and repair

• Lead-free soldering versus SnPb soldering

16.3 Wave soldering

Key characteristics in wave soldering are:

• Process issues, such as application of adhesive and flux, clinching of leads, board

transport, the solder wave parameters, and the time during which components are

exposed to the wave

• Solder bath specifications, including temperature and impurities

SA58632_2

Product data sheet

Rev. 02 — 4 March 2010

22 of 28

SA58632

NXP Semiconductors

2 × 2.2 W BTL audio amplifier

16.4 Reflow soldering

Key characteristics in reflow soldering are:

• Lead-free versus SnPb soldering; note that a lead-free reflow process usually leads to

higher minimum peak temperatures (see Figure 25) than a SnPb process, thus

reducing the process window

• Solder paste printing issues including smearing, release, and adjusting the process

window for a mix of large and small components on one board

• Reflow temperature profile; this profile includes preheat, reflow (in which the board is

heated to the peak temperature) and cooling down. It is imperative that the peak

temperature is high enough for the solder to make reliable solder joints (a solder paste

characteristic). In addition, the peak temperature must be low enough that the

packages and/or boards are not damaged. The peak temperature of the package

depends on package thickness and volume and is classified in accordance with

Table 8 and 9

Table 8.

SnPb eutectic process (from J-STD-020C)

Package thickness (mm) Package reflow temperature (°C)

Volume (mm³)

< 350

≥ 350

220

< 2.5

235

220

≥ 2.5

220

Table 9.

Lead-free process (from J-STD-020C)

Package thickness (mm) Package reflow temperature (°C)

Volume (mm³)

< 350

260

350 to 2000

> 2000

260

< 1.6

260

250

245

1.6 to 2.5

> 2.5

260

245

250

245

Moisture sensitivity precautions, as indicated on the packing, must be respected at all

times.

Studies have shown that small packages reach higher temperatures during reflow

soldering, see Figure 25.

SA58632_2

Product data sheet

Rev. 02 — 4 March 2010

23 of 28

SA58632

NXP Semiconductors

2 × 2.2 W BTL audio amplifier

maximum peak temperature

= MSL limit, damage level

temperature

minimum peak temperature

= minimum soldering temperature

peak

temperature

time

001aac844

MSL: Moisture Sensitivity Level

Fig 25. Temperature profiles for large and small components

For further information on temperature profiles, refer to Application Note AN10365

“Surface mount reflow soldering description”.

17. Abbreviations

Table 10. Abbreviations

Acronym

BTL

Description

Bridge-Tied Load

CMOS

DAP

Complementary Metal Oxide Semiconductor

Die Attach Paddle

ESD

ElectroStatic Discharge

Negative-Positive-Negative

Printed-Circuit Board

NPN

PCB

PNP

Positive-Negative-Positive

Root Mean Squared

RMS

SE

Single-Ended

THD

Total Harmonic Distortion

SA58632_2

Product data sheet

Rev. 02 — 4 March 2010

24 of 28

SA58632

NXP Semiconductors

2 × 2.2 W BTL audio amplifier

18. Revision history

Table 11. Revision history

Document ID

SA58632_2

Release date

Data sheet status

Change notice

Supersedes

20100304

Product data sheet

-

SA58632_1

Modifications:

• The format of this data sheet has been redesigned to comply with the new identity guidelines of

NXP Semiconductors.

• Legal texts have been adapted to the new company name where appropriate.

• Table 6 “Static characteristics”: Min. value for V_I(BTL)changed from “2 V” to “0.42 × V_CC”.

SA58632_1

20060627

Product data sheet

-

SA58632_2

Product data sheet

Rev. 02 — 4 March 2010

25 of 28

SA58632

NXP Semiconductors

2 × 2.2 W BTL audio amplifier

19. Legal information

19.1 Data sheet status

Document status^[1][2]

Product status^[3]

Development

Definition

Objective [short] data sheet

This document contains data from the objective specification for product development.

This document contains data from the preliminary specification.

This document contains the product specification.

Preliminary [short] data sheet Qualification

Product [short] data sheet Production

[1]

[2]

[3]

Please consult the most recently issued document before initiating or completing a design.

The term ‘short data sheet’ is explained in section “Definitions”.

The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.nxp.com.

malfunction of an NXP Semiconductors product can reasonably be expected

19.2 Definitions

to result in personal injury, death or severe property or environmental

damage. NXP Semiconductors accepts no liability for inclusion and/or use of

NXP Semiconductors products in such equipment or applications and

therefore such inclusion and/or use is at the customer’s own risk.

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. NXP Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liability for the consequences of

use of such information.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. NXP Semiconductors makes no

representation or warranty that such applications will be suitable for the

specified use without further testing or modification.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and title. A short data sheet is intended

for quick reference only and should not be relied upon to contain detailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local NXP Semiconductors sales

office. In case of any inconsistency or conflict with the short data sheet, the

full data sheet shall prevail.

NXP Semiconductors does not accept any liability related to any default,

damage, costs or problem which is based on a weakness or default in the

customer application/use or the application/use of customer’s third party

customer(s) (hereinafter both referred to as “Application”). It is customer’s

sole responsibility to check whether the NXP Semiconductors product is

suitable and fit for the Application planned. Customer has to do all necessary

testing for the Application in order to avoid a default of the Application and the

product. NXP Semiconductors does not accept any liability in this respect.

Product specification — The information and data provided in a Product

data sheet shall define the specification of the product as agreed between

NXP Semiconductors and its customer, unless NXP Semiconductors and

customer have explicitly agreed otherwise in writing. In no event however,

shall an agreement be valid in which the NXP Semiconductors product is

deemed to offer functions and qualities beyond those described in the

Product data sheet.

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those given in

the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanently and irreversibly affect

the quality and reliability of the device.

19.3 Disclaimers

Terms and conditions of commercial sale — NXP Semiconductors

products are sold subject to the general terms and conditions of commercial

sale, as published at http://www.nxp.com/profile/terms, unless otherwise

agreed in a valid written individual agreement. In case an individual

agreement is concluded only the terms and conditions of the respective

agreement shall apply. NXP Semiconductors hereby expressly objects to

applying the customer’s general terms and conditions with regard to the

purchase of NXP Semiconductors products by customer.

Limited warranty and liability — Information in this document is believed to

be accurate and reliable. However, NXP Semiconductors does not give any

representations or warranties, expressed or implied, as to the accuracy or

completeness of such information and shall have no liability for the

consequences of use of such information.

In no event shall NXP Semiconductors be liable for any indirect, incidental,

punitive, special or consequential damages (including - without limitation - lost

profits, lost savings, business interruption, costs related to the removal or

replacement of any products or rework charges) whether or not such

damages are based on tort (including negligence), warranty, breach of

contract or any other legal theory.

No offer to sell or license — Nothing in this document may be interpreted or

construed as an offer to sell products that is open for acceptance or the grant,

conveyance or implication of any license under any copyrights, patents or

other industrial or intellectual property rights.

Notwithstanding any damages that customer might incur for any reason

whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards

customer for the products described herein shall be limited in accordance

with the Terms and conditions of commercial sale of NXP Semiconductors.

Export control — This document as well as the item(s) described herein

may be subject to export control regulations. Export might require a prior

authorization from national authorities.

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

Right to make changes — NXP Semiconductors reserves the right to make

changes to information published in this document, including without

limitation specifications and product descriptions, at any time and without

notice. This document supersedes and replaces all information supplied prior

to the publication hereof.

Non-automotive qualified products — Unless this data sheet expressly

states that this specific NXP Semiconductors product is automotive qualified,

the product is not suitable for automotive use. It is neither qualified nor tested

in accordance with automotive testing or application requirements. NXP

Semiconductors accepts no liability for inclusion and/or use of

Suitability for use — NXP Semiconductors products are not designed,

authorized or warranted to be suitable for use in medical, military, aircraft,

space or life support equipment, nor in applications where failure or

non-automotive qualified products in automotive equipment or applications.

SA58632_2

Product data sheet

Rev. 02 — 4 March 2010

26 of 28

SA58632

NXP Semiconductors

2 × 2.2 W BTL audio amplifier

In the event that customer uses the product for design-in and use in

automotive applications to automotive specifications and standards, customer

(a) shall use the product without NXP Semiconductors’ warranty of the

product for such automotive applications, use and specifications, and (b)

whenever customer uses the product for automotive applications beyond

NXP Semiconductors’ specifications such use shall be solely at customer’s

own risk, and (c) customer fully indemnifies NXP Semiconductors for any

liability, damages or failed product claims resulting from customer design and

use of the product for automotive applications beyond NXP Semiconductors’

standard warranty and NXP Semiconductors’ product specifications.

19.4 Trademarks

Notice: All referenced brands, product names, service names and trademarks

are the property of their respective owners.

20. Contact information

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

SA58632_2

Product data sheet

Rev. 02 — 4 March 2010

27 of 28

SA58632

NXP Semiconductors

2 × 2.2 W BTL audio amplifier

21. Contents

1

2

3

4

5

6

General description. . . . . . . . . . . . . . . . . . . . . . 1

Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Quick reference data . . . . . . . . . . . . . . . . . . . . . 2

Ordering information. . . . . . . . . . . . . . . . . . . . . 2

Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 3

7

7.1

7.2

Pinning information. . . . . . . . . . . . . . . . . . . . . . 4

Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 4

8

Functional description . . . . . . . . . . . . . . . . . . . 5

Power amplifier. . . . . . . . . . . . . . . . . . . . . . . . . 5

Mode select pin (MODE) . . . . . . . . . . . . . . . . . 5

BTL/SE output configuration. . . . . . . . . . . . . . . 5

8.1

8.2

8.3

9

Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 6

Thermal characteristics . . . . . . . . . . . . . . . . . . 6

Static characteristics. . . . . . . . . . . . . . . . . . . . . 6

Dynamic characteristics . . . . . . . . . . . . . . . . . . 7

Application information. . . . . . . . . . . . . . . . . . . 8

BTL application. . . . . . . . . . . . . . . . . . . . . . . . . 8

10

11

12

13

13.1

14

Test information. . . . . . . . . . . . . . . . . . . . . . . . . 9

Static characterization. . . . . . . . . . . . . . . . . . . . 9

BTL dynamic characterization . . . . . . . . . . . . 10

Thermal behavior . . . . . . . . . . . . . . . . . . . . . . 11

Single-ended application . . . . . . . . . . . . . . . . 15

General remarks. . . . . . . . . . . . . . . . . . . . . . . 19

SA58632BS PCB demo . . . . . . . . . . . . . . . . . 19

14.1

14.2

14.3

14.4

14.5

14.6

15

Package outline . . . . . . . . . . . . . . . . . . . . . . . . 21

16

Soldering of SMD packages . . . . . . . . . . . . . . 22

Introduction to soldering . . . . . . . . . . . . . . . . . 22

Wave and reflow soldering . . . . . . . . . . . . . . . 22

Wave soldering. . . . . . . . . . . . . . . . . . . . . . . . 22

Reflow soldering. . . . . . . . . . . . . . . . . . . . . . . 23

16.1

16.2

16.3

16.4

17

18

Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 24

Revision history. . . . . . . . . . . . . . . . . . . . . . . . 25

19

Legal information. . . . . . . . . . . . . . . . . . . . . . . 26

Data sheet status . . . . . . . . . . . . . . . . . . . . . . 26

Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 26

Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 26

Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 27

19.1

19.2

19.3

19.4

20

21

Contact information. . . . . . . . . . . . . . . . . . . . . 27

Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 4 March 2010

Document identifier: SA58632_2


型号：	SA58632BS,118
厂家：	NXP
描述：	SA58632 - 2 x 2.2 W BTL audio amplifier QFN 20-Pin 放大器商用集成电路
文件：	总28页 (文件大小：281K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

SA58632BS,118 [NXP]

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