SA58631 [NXP]
3 W BTL audio amplifier; 3 W BTL音频放大器
| 型号： | SA58631 |
| 厂家： | 
NXP |
| 描述： | 3 W BTL audio amplifier |
| 文件： | 总19页 (文件大小：375K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SA58631
3 W BTL audio amplifier
Rev. 01 — 1 December 2005
Preliminary data sheet
1. General description
The SA58631 is a one channel audio amplifier in a HVSON8 package. It provides power
output of 3 W with a 8 Ω load at 9 V supply. The internal circuit is comprised of a BTL
(Bridge Tied Load) amplifier with a complementary PNP-NPN output stage and
standby/mute logic. The SA58631 is housed in an 8-pin HVSON package which has an
exposed die attach paddle enabling reduced thermal resistance and increased power
dissipation.
2. Features
■ Low junction-to-ambient thermal resistance using exposed die attach paddle
■ Gain can be fixed with external resistors from 6 dB to 30 dB
■ Standby mode controlled by CMOS compatible levels
■ Low standby current <10 µA
■ No switch-on/switch-off plops
■ High power supply ripple rejection 50 dB minimum
■ ElectroStatic Discharge (ESD) protection
■ Output short circuit to ground protection
■ Thermal shutdown protection
3. Applications
■ Professional and amateur mobile radio
■ Portable consumer products: toys and games
■ Personal computer remote speakers
SA58631
Philips Semiconductors
3 W BTL audio amplifier
4. Quick reference data
Table 1:
Quick reference data
Symbol Parameter
Conditions
Min
Typ
Max Unit
VCC
Iq
supply voltage
quiescent current
standby current
output power
2.2
9
8
-
18
12
10
V
VCC = 5 V
-
-
mA
µA
Istb
Po
THD + N = 10 %; RL = 8 Ω
VCC = 5 V
1
-
1.2
3
-
-
-
W
W
%
VCC = 9 V
THD + N total harmonic
distortion-plus-noise
Po = 0.5 W
-
0.15
PSRR
power supply rejection
ratio
50
-
-
dB
5. Ordering information
Table 2:
Ordering information
Type
number
Package
Name
Description
Version
SA58631TK HVSON8 plastic thermal enhanced very thin small outline package; SOT909-1
no leads; 8 terminals; body 4 x 4 x 0.8 mm
6. Block diagram
SA58631
4
3
5
8
IN−
IN+
OUT−
R
6
V
CC
R
20 kΩ
20 kΩ
OUT+
2
1
SVR
MODE
STANDBY/MUTE LOGIC
7
GND
002aac005
Fig 1. Block diagram of SA58631
SA58631
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Preliminary data sheet
Rev. 01 — 1 December 2005
2 of 19
SA58631
Philips Semiconductors
3 W BTL audio amplifier
7. Pinning information
7.1 Pinning
terminal 1
index area
MODE
SVR
IN+
1
2
3
4
8
7
6
5
OUT+
GND
SA58631TK
V
CC
IN−
OUT−
002aac006
Transparent top view
Fig 2. Pin configuration for HVSON8
7.2 Pin description
Table 3:
Pin description
Symbol
MODE
SVR
Pin
1
Description
operating mode select (standby, mute, operating)
half supply voltage, decoupling ripple rejection
positive input
2
IN+
3
IN−
4
negative input
OUT−
VCC
5
negative output terminal
supply voltage
6
GND
OUT+
7
ground
8
positive output terminal
8. Functional description
The SA58631 is a single channel BTL audio amplifier capable of delivering 3 W output
power to an 8 Ω load at THD + N = 10 % using a 9 V power supply. Using the MODE pin,
the device can be switched to standby and mute condition. The device is protected by an
internal thermal shutdown protection mechanism. The gain can be set within a range of
6 dB to 30 dB by external feedback resistors.
8.1 Power amplifier
The power amplifier is a Bridge Tied Load (BTL) amplifier with a complementary
PNP-NPN output stage. The voltage loss on the positive supply line is the saturation
voltage of a PNP power transistor, on the negative side the saturation voltage of an NPN
power transistor. The total voltage loss is < 1 V. With a supply voltage of 9 V and an 8 Ω
loudspeaker, an output power of 3 W can be delivered to the load.
SA58631
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Preliminary data sheet
Rev. 01 — 1 December 2005
3 of 19
SA58631
Philips Semiconductors
3 W BTL audio amplifier
8.2 Mode select pin (MODE)
The device is in Standby mode (with a very low current consumption) if the voltage at the
MODE pin is greater than VCC − 0.5 V, or if this pin is floating. At a MODE voltage in the
range between 1.5 V and VCC − 1.5 V the amplifier is in a mute condition. The mute
condition is useful to suppress plop noise at the output, caused by charging of the input
capacitor.
9. Limiting values
Table 4:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
−0.3
−0.3
-
Max
+18
Unit
V
VCC
VI
supply voltage
operating
input voltage
VCC + 0.3
1
V
IORM
Tstg
Tamb
Vpsc
Ptot
repetitive peak output current
storage temperature
ambient temperature
AC and DC short-circuit safe voltage
total power dissipation
A
non-operating
operating
−55
−40
-
+150
+85
°C
°C
V
10
HVSON8
-
2.3
W
10. Thermal characteristics
Table 5:
Symbol
Rth(j-a)
Thermal characteristics
Parameter
Conditions
Typ
80
Unit
K/W
K/W
thermal resistance from junction to free air
ambient
[1]
[1]
1.5 square inch
heat spreader
32
5 square inch
heat spreader
28
5
K/W
K/W
Rth(j-sp)
thermal resistance from junction to
solder point
[1] Rth is 28 K/W with DAP soldered to 5 square inch, 1 ounce copper heat spreader.
SA58631
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Preliminary data sheet
Rev. 01 — 1 December 2005
4 of 19
SA58631
Philips Semiconductors
3 W BTL audio amplifier
11. Static characteristics
Table 6:
Static characteristics
VCC = 5 V; Tamb = 25 °C; RL = 8 Ω; VMODE = 0 V; measured in test circuit Figure 3; unless otherwise specified.
Symbol
Parameter
Conditions
operating
RL = ∞
Min
Typ
Max
18
Unit
V
VCC
supply voltage
2.2
9
8
-
[1]
[2]
Iq
quiescent current
-
12
mA
µA
V
Istb
standby current
VMODE = VCC
-
10
VO
output voltage
-
2.2
-
-
| VOUT+ − VOUT−
IIB(IN+)
|
differential output voltage offset
input bias current on pin IN+
input bias current on pin IN−
voltage on pin MODE
-
50
mV
nA
nA
V
-
-
500
500
0.5
IIB(IN−)
-
-
VMODE
operating
0
-
mute
1.5
-
VCC − 1.5
VCC
20
V
standby
VCC − 0.5
-
V
IMODE
current on pin MODE
0 V < VMODE < VCC
-
-
µA
[1] With a load connected at the outputs the quiescent current will increase, the maximum of this increase being equal to the DC output
offset voltage divided by RL.
[2] The DC output voltage with respect to ground is approximately 0.5 × VCC
.
12. Dynamic characteristics
Table 7:
Dynamic characteristics
VCC = 5 V; Tamb = 25 °C; RL = 8 Ω; f = 1 kHz; VMODE = 0 V; measured in test circuit Figure 3; unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
1.2
Max
Unit
W
Po
output power
THD + N = 10 %
THD + N = 0.5 %
THD + N = 10 %; VCC = 9 V
Po = 0.5 W
1
-
0.6
0.9
-
W
-
-
3.0
-
W
THD + N
total harmonic distortion
plus noise
0.15
0.3
%
[1]
Gv(cl)
closed-loop voltage gain
6
-
-
30
-
dB
∆Zi
differential input
impedance
100
kΩ
[2]
[3]
[4]
[5]
Vn(o)
noise output voltage
-
-
-
-
-
100
µV
dB
dB
µV
PSRR
power supply rejection
ratio
50
40
-
-
-
VO
output voltage
mute condition
200
[1] Gain of the amplifier is 2 × (R2 / R1) in test circuit of Figure 3.
[2] The noise output voltage is measured at the output in a frequency range from 20 Hz to 20 kHz (unweighted), with a source impedance
of RS = 0 Ω at the input.
[3] Supply voltage ripple rejection is measured at the output with a source impedance of Rs = 0 Ω at the input. The ripple voltage is a
sine wave with a frequency of 1 kHz and an amplitude of 100 mV (RMS), which is applied to the positive supply rail.
[4] Supply voltage ripple rejection is measured at the output, with a source impedance of Rs = 0 Ω at the input. The ripple voltage is a
sine wave with a frequency between 100 Hz and 20 kHz and an amplitude of 100 mV (RMS), which is applied to the positive supply rail.
[5] Output voltage in mute position is measured with an input voltage of 1 V (RMS) in a bandwidth of 20 kHz, which includes noise.
SA58631
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Preliminary data sheet
Rev. 01 — 1 December 2005
5 of 19
SA58631
Philips Semiconductors
3 W BTL audio amplifier
13. Application information
V
CC
R2
56 kΩ
C1
1 µF
R1
11 kΩ
100 nF
100 µF
6
IN−
IN+
4
3
2
1
OUT−
5
8
V
I
SA58631
R
L
SVR
OUT+
C2
47 µF
MODE
7
GND
002aac007
R2
------
Gain = 2 ×
R1
Fig 3. Application diagram of SA58631 BTL differential output configuration
14. Test information
14.1 Test conditions
The junction to ambient thermal resistance, Rth(j-a) = 27.7 K/W for the HVSON8 package
when the exposed die attach paddle is soldered to 5 square inch area of 1 ounce copper
heat spreader on the demo PCB. The maximum sine wave power dissipation for
Tamb = 25 °C is:
150 – 25
27.7
= 4.5 W .
--------------------
Thus, for Tamb = +85 °C the maximum total power dissipation is:
150 – 85
= 2.35 W .
--------------------
27.7
The power dissipation versus ambient temperature curve (Figure 5) shows the power
derating profiles with ambient temperature for three sizes of heat spreaders. For a more
modest heat spreader using 1.5 square inch area on the top side of the PCB, the
R
th(j-a) is 31.25 K/W. When the package is not soldered to a heat spreader, the Rth(j-a)
increases to 83.3 K/W.
SA58631
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Preliminary data sheet
Rev. 01 — 1 December 2005
6 of 19
SA58631
Philips Semiconductors
3 W BTL audio amplifier
002aac009
002aac008
5.0
4.0
3.0
2.0
1.0
0
6.0
(3)
(2)
P
(W)
P
o
(W)
R
L
= 8 Ω
16 Ω
4.0
(1)
2.0
0
0
50
100
150
0
5.0
10.0
15.0
20.0
T
(°C)
V
(V)
amb
CC
(1) No heat spreader.
(2) Top only heat spreader (1.5 in2, 1 ounce copper).
(3) Both top and bottom heat spreader (approximately
5 in2, 1 ounce copper).
Fig 4. Output power versus supply voltage @
THD + N = 10 %; 5 in2 heat spreader
Fig 5. Power dissipation versus ambient temperature
14.2 BTL application
Tamb = 25 °C, VCC = 9 V, f = 1 kHz, RL = 8 Ω, Gv = 20 dB, audio band-pass 20 Hz to
20 kHz. The BTL diagram is shown in Figure 3.
The quiescent current has been measured without any load impedance. The total
harmonic distortion + noise (THD + N) as a function of frequency was measured with a
low-pass filter of 80 kHz. The value of capacitor C2 influences the behavior of PSRR at
low frequencies; increasing the value of C2 increases the performance of PSRR. Figure 6
“VMODE versus VCC” shows three areas: operating, mute and standby. It shows that the DC
switching levels of the mute and standby respectively depends on the supply voltage level.
The following characterization curves show the room temperature performance for
SA58631 using the demo PCB shown in Figure 21. The 8 curves for power dissipation
versus output power (Figure 10 through Figure 17) as a function of supply voltage, heat
spreader area, load resistance and voltage gain show that there is very little difference in
performance with voltage gain; however, there are significant differences with supply
voltage and load resistance.
The curves for THD + N versus output power (Figure 18) show that the SA58631 yields
the best power output using an 8 Ω load at 9 V supply. Under these conditions the part
delivers typically 3 W output power for THD + N = 10 %.
SA58631
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Preliminary data sheet
Rev. 01 — 1 December 2005
7 of 19
SA58631
Philips Semiconductors
3 W BTL audio amplifier
002aac042
002aac043
16
15
V
MODE
(V)
I
q
(mA)
12
8
standby
10
mute
5
0
4
operating
16
0
0
4
8
12
0
4
8
12
16
V
CC
20
(V)
V
(V)
CC
Fig 6. VMODE versus VCC
Fig 7. Iq versus VCC
002aac044
002aac045
10
−20
V
o
(V)
SVRR
(dB)
1
−1
10
−40
−2
−3
−4
−5
−6
10
10
10
10
10
(1)
(1)
(2) (3)
(2)
(3)
−60
−80
2
3
4
5
−1
2
10
10
10
10
10
10
1
10
10
f (Hz)
V
MODE
(V)
VCC = 5 V, RL = 8 Ω; Rs = 0 Ω; VI = 100 mV.
(1) Gv = 30 dB
Band-pass = 22 Hz to 22 kHz.
(1) VCC = 3 V
(2) VCC = 5 V
(3) VCC = 12 V
(2) Gv = 20 dB
(3) Gv = 6 dB
Fig 8. SVRR versus frequency
Fig 9. Vo versus VMODE
SA58631
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Preliminary data sheet
Rev. 01 — 1 December 2005
8 of 19
SA58631
Philips Semiconductors
3 W BTL audio amplifier
002aac027
002aac028
5.0
P
(W)
4.0
5.0
4.0
3.0
2.0
1.0
0
P
(W)
V
CC
= 9.0 V
7.5 V
V
CC
= 9.0 V
7.5 V
3.0
2.0
1.0
0
5.0 V
5.0 V
0
0.6
1.2
1.8
2.4
0
0.6
1.2
1.8
2.4
P
(W)
P (W)
o
o
Fig 10. Power dissipation versus output power;
Fig 11. Power dissipation versus output power;
RL = 4.0 Ω; Gv = 10 dB; 1.5 inch2 heat spreader
RL = 4.0 Ω; Gv = 20 dB; 1.5 inch2 heat spreader
002aac029
002aac030
3.0
3.0
P
(W)
P
(W)
V
CC
= 9.0 V
7.5 V
V
CC
= 9.0 V
7.5 V
2.0
1.0
0
2.0
1.0
0
5.0 V
5.0 V
0
1.0
2.0
3.0
4.0
0
1.0
2.0
3.0
4.0
P
o
(W)
P (W)
o
Fig 12. Power dissipation versus output power;
Fig 13. Power dissipation versus output power;
RL = 8.0 Ω; Gv = 10 dB; 1.5 inch2 heat spreader
RL = 8.0 Ω; Gv = 20 dB; 1.5 inch2 heat spreader
002aac031
002aac032
1.6
1.6
P
(W)
P
(W)
V
CC
= 9.0 V
7.5 V
V
CC
= 9.0 V
7.5 V
1.2
1.2
0.8
0.4
0
0.8
0.4
0
5.0 V
5.0 V
0
1.0
2.0
3.0
0
1.0
2.0
3.0
P
o
(W)
P (W)
o
Fig 14. Power dissipation versus output power;
Fig 15. Power dissipation versus output power;
RL = 16 Ω; Gv = 10 dB; 1.5 inch2 heat spreader
RL = 16 Ω; Gv = 20 dB; 1.5 inch2 heat spreader
SA58631
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Preliminary data sheet
Rev. 01 — 1 December 2005
9 of 19
SA58631
Philips Semiconductors
3 W BTL audio amplifier
002aac033
002aac034
3.0
P
1.6
P
V
CC
= 9.0 V
7.5 V
V
CC
= 9.0 V
7.5 V
(W)
(W)
1.2
2.0
1.0
0
0.8
0.4
0
5.0 V
5.0 V
0
1.0
2.0
3.0
4.0
0
1.0
2.0
3.0
P
(W)
P (W)
o
o
Fig 16. Power dissipation versus output power;
Fig 17. Power dissipation versus output power;
RL = 8.0 Ω; Gv = 20 dB; 5 inch2 heat spreader
RL = 16 Ω; Gv = 20 dB; 5 inch2 heat spreader
002aac035
002aac036
100.00
100.00
P
P
(W)
(W)
V
= 5.0 V
7.5 V
9.0 V
V
= 5.0 V
7.5 V
9.0 V
CC
CC
10.00
1.00
0.10
0.01
10.00
1.00
0.10
0.01
0.01
0.10
1.00
10.00
0.01
0.10
1.00
10.00
P
o
(W)
P (W)
o
a. f = 1 kHz; RL = 4 Ω
b. f = 1 kHz; RL = 8 Ω
002aac037
100.00
P
(W)
V
= 5.0 V
7.5 V
9.0 V
CC
10.00
1.00
0.10
0.01
0.01
0.10
1.00
10.00
P
o
(W)
c. f = 1 kHz; RL = 16 Ω
Fig 18. THD + N versus output power
SA58631
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Preliminary data sheet
Rev. 01 — 1 December 2005
10 of 19
SA58631
Philips Semiconductors
3 W BTL audio amplifier
002aac038
002aac039
2.0
THD + N
(%)
1.2
THD + N
(%)
1.6
0.8
0.4
0
1.2
0.8
0.4
0
0.10
1.00
10.00
0.10
1.00
10.00
f (kHz)
f (kHz)
a. RL = 4 Ω
b. RL = 8 Ω
002aac040
1.0
THD + N
(%)
0.8
0.6
0.4
0.2
0
0.10
1.00
10.00
f (kHz)
c. RL = 16 Ω
Fig 19. THD + N versus frequency
SA58631
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Preliminary data sheet
Rev. 01 — 1 December 2005
11 of 19
SA58631
Philips Semiconductors
3 W BTL audio amplifier
14.3 Single-ended application
Tamb = 25 °C; VCC = 7.5 V; f = 1 kHz; RL = 8 Ω; Gv = 20 dB; audio band-pass 20 Hz to
20 kHz.
The Single-Ended (SE) application diagram is shown in Figure 20.
V
CC
R2
110 kΩ
C1
1 µF
R1
11 kΩ
100 nF
C3
100 µF
6
IN−
IN+
4
3
2
1
OUT−
5
8
V
I
470 µF
SA58631
R
L
SVR
OUT+
C2
47 µF
MODE
7
GND
002aac041
R2
Gain =
------
R1
Fig 20. SE application circuit configuration
The capacitor value of C3 in combination with the load impedance determines the low
frequency behavior. The total harmonic distortion + noise as a function of frequency was
measured with a low-pass filter of 80 kHz. The value of the capacitor C2 influences the
behavior of the PSRR at low frequencies; increasing the value of C2 increases the
performance of PSRR.
14.4 General remarks
The frequency characteristics can be adapted by connecting a small capacitor across the
feedback resistor. To improve the immunity of HF radiation in radio circuit applications, a
small capacitor can be connected in parallel with the feedback resistor (56 kΩ); this
creates a low-pass filter.
SA58631
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Preliminary data sheet
Rev. 01 — 1 December 2005
12 of 19
SA58631
Philips Semiconductors
3 W BTL audio amplifier
14.5 SA58631TK PCB demo
The application demo board may be used for evaluation in either BTL or SE configuration
as shown in the schematics in Figure 3 and Figure 20. The demo PCB is laid out for the
5 square inch heat spreader (total of top and bottom heat spreader area).
top layer
bottom layer
SA58631TK
6.8 k
6.8 k
Gnd
MS
Rev3
OUT+
47 µF
P1
11 k
INPUT
OUT−
V
CC
Gnd
002aac047
Fig 21. SA58631TK PCB demo
SA58631
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Preliminary data sheet
Rev. 01 — 1 December 2005
13 of 19
SA58631
Philips Semiconductors
3 W BTL audio amplifier
15. Package outline
HVSON8: plastic thermal enhanced very thin small outline package; no leads;
8 terminals; body 4 x 4 x 0.85 mm
SOT909-1
0
1
2 mm
scale
X
B
A
D
E
A
A
1
c
detail X
terminal 1
index area
e
1
C
terminal 1
index area
M
v
w
C
C
A
B
e
b
y
1
y
M
C
1
4
L
exposed tie bar (4×)
E
h
8
5
D
h
DIMENSIONS (mm are the original dimensions)
(1)
A
(1)
(1)
UNIT
A
b
E
e
e
y
c
D
D
E
L
v
w
y
1
1
h
1
h
max.
0.05
0.00
0.4
0.3
4.1
3.9
3.25
2.95
4.1
3.9
2.35
2.05
0.65
0.40
mm
0.05
0.1
1
0.2
0.8
2.4
0.1
0.05
Note
1. Plastic or metal protrusions of 0.075 mm maximum per side are not included.
REFERENCES
JEDEC JEITA
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
05-09-26
05-09-28
SOT909-1
MO-229
Fig 22. Package outline SOT909-1 (HVSON8)
SA58631
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Preliminary data sheet
Rev. 01 — 1 December 2005
14 of 19
SA58631
Philips Semiconductors
3 W BTL audio amplifier
16. Soldering
16.1 Introduction to soldering surface mount packages
This text gives a very brief insight to a complex technology. A more in-depth account of
soldering ICs can be found in our Data Handbook IC26; Integrated Circuit Packages
(document order number 9398 652 90011).
There is no soldering method that is ideal for all surface mount IC packages. Wave
soldering can still be used for certain surface mount ICs, but it is not suitable for fine pitch
SMDs. In these situations reflow soldering is recommended.
16.2 Reflow soldering
Reflow soldering requires solder paste (a suspension of fine solder particles, flux and
binding agent) to be applied to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement. Driven by legislation and
environmental forces the worldwide use of lead-free solder pastes is increasing.
Several methods exist for reflowing; for example, convection or convection/infrared
heating in a conveyor type oven. Throughput times (preheating, soldering and cooling)
vary between 100 seconds and 200 seconds depending on heating method.
Typical reflow peak temperatures range from 215 °C to 270 °C depending on solder paste
material. The top-surface temperature of the packages should preferably be kept:
• below 225 °C (SnPb process) or below 245 °C (Pb-free process)
– for all BGA, HTSSON..T and SSOP..T packages
– for packages with a thickness ≥ 2.5 mm
– for packages with a thickness < 2.5 mm and a volume ≥ 350 mm3 so called
thick/large packages.
• below 240 °C (SnPb process) or below 260 °C (Pb-free process) for packages with a
thickness < 2.5 mm and a volume < 350 mm3 so called small/thin packages.
Moisture sensitivity precautions, as indicated on packing, must be respected at all times.
16.3 Wave soldering
Conventional single wave soldering is not recommended for surface mount devices
(SMDs) or printed-circuit boards with a high component density, as solder bridging and
non-wetting can present major problems.
To overcome these problems the double-wave soldering method was specifically
developed.
If wave soldering is used the following conditions must be observed for optimal results:
• Use a double-wave soldering method comprising a turbulent wave with high upward
pressure followed by a smooth laminar wave.
• For packages with leads on two sides and a pitch (e):
– larger than or equal to 1.27 mm, the footprint longitudinal axis is preferred to be
parallel to the transport direction of the printed-circuit board;
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Preliminary data sheet
Rev. 01 — 1 December 2005
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– smaller than 1.27 mm, the footprint longitudinal axis must be parallel to the
transport direction of the printed-circuit board.
The footprint must incorporate solder thieves at the downstream end.
• For packages with leads on four sides, the footprint must be placed at a 45° angle to
the transport direction of the printed-circuit board. The footprint must incorporate
solder thieves downstream and at the side corners.
During placement and before soldering, the package must be fixed with a droplet of
adhesive. The adhesive can be applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the adhesive is cured.
Typical dwell time of the leads in the wave ranges from 3 seconds to 4 seconds at 250 °C
or 265 °C, depending on solder material applied, SnPb or Pb-free respectively.
A mildly-activated flux will eliminate the need for removal of corrosive residues in most
applications.
16.4 Manual soldering
Fix the component by first soldering two diagonally-opposite end leads. Use a low voltage
(24 V or less) soldering iron applied to the flat part of the lead. Contact time must be
limited to 10 seconds at up to 300 °C.
When using a dedicated tool, all other leads can be soldered in one operation within
2 seconds to 5 seconds between 270 °C and 320 °C.
16.5 Package related soldering information
Table 8:
Package [1]
Suitability of surface mount IC packages for wave and reflow soldering methods
Soldering method
Wave
Reflow[2]
BGA, HTSSON..T[3], LBGA, LFBGA, SQFP,
SSOP..T[3], TFBGA, VFBGA, XSON
not suitable
suitable
DHVQFN, HBCC, HBGA, HLQFP, HSO, HSOP,
HSQFP, HSSON, HTQFP, HTSSOP, HVQFN,
HVSON, SMS
not suitable [4]
suitable
PLCC[5], SO, SOJ
suitable
suitable
LQFP, QFP, TQFP
not recommended[5] [6]
not recommended[7]
not suitable
suitable
SSOP, TSSOP, VSO, VSSOP
CWQCCN..L [8], PMFP[9], WQCCN..L[8]
suitable
not suitable
[1] For more detailed information on the BGA packages refer to the (LF)BGA Application Note (AN01026);
order a copy from your Philips Semiconductors sales office.
[2] All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the
maximum temperature (with respect to time) and body size of the package, there is a risk that internal or
external package cracks may occur due to vaporization of the moisture in them (the so called popcorn
effect). For details, refer to the Drypack information in the Data Handbook IC26; Integrated Circuit
Packages; Section: Packing Methods.
[3] These transparent plastic packages are extremely sensitive to reflow soldering conditions and must on no
account be processed through more than one soldering cycle or subjected to infrared reflow soldering with
peak temperature exceeding 217 °C ± 10 °C measured in the atmosphere of the reflow oven. The package
body peak temperature must be kept as low as possible.
SA58631
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Preliminary data sheet
Rev. 01 — 1 December 2005
16 of 19
SA58631
Philips Semiconductors
3 W BTL audio amplifier
[4] These packages are not suitable for wave soldering. On versions with the heatsink on the bottom side, the
solder cannot penetrate between the printed-circuit board and the heatsink. On versions with the heatsink
on the top side, the solder might be deposited on the heatsink surface.
[5] If wave soldering is considered, then the package must be placed at a 45° angle to the solder wave
direction. The package footprint must incorporate solder thieves downstream and at the side corners.
[6] Wave soldering is suitable for LQFP, QFP and TQFP packages with a pitch (e) larger than 0.8 mm; it is
definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm.
[7] Wave soldering is suitable for SSOP, TSSOP, VSO and VSSOP packages with a pitch (e) equal to or larger
than 0.65 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm.
[8] Image sensor packages in principle should not be soldered. They are mounted in sockets or delivered
pre-mounted on flex foil. However, the image sensor package can be mounted by the client on a flex foil by
using a hot bar soldering process. The appropriate soldering profile can be provided on request.
[9] Hot bar soldering or manual soldering is suitable for PMFP packages.
17. Abbreviations
Table 9:
Abbreviations
Description
Acronym
BTL
Bridge Tied Load
CMOS
DAP
Complementary Metal Oxide Silicon
Die Attach Paddle
ESD
ElectroStatic Discharge
Negative-Positive-Negative
Printed-Circuit Board
NPN
PCB
PNP
Positive-Negative-Positive
Root Mean Squared
RMS
THD
Total Harmonic Distortion
18. Revision history
Table 10: Revision history
Document ID
Release date Data sheet status
20051201 Preliminary data sheet
Change notice Doc. number
SA58631_1
Supersedes
SA58631_1
-
-
SA58631
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Preliminary data sheet
Rev. 01 — 1 December 2005
17 of 19
SA58631
Philips Semiconductors
3 W BTL audio amplifier
19. Data sheet status
Level Data sheet status [1] Product status[2] [3]
Definition
I
Objective data
Development
This data sheet contains data from the objective specification for product development. Philips
Semiconductors reserves the right to change the specification in any manner without notice.
II
Preliminary data
Qualification
This data sheet contains data from the preliminary specification. Supplementary data will be published
at a later date. Philips Semiconductors reserves the right to change the specification without notice, in
order to improve the design and supply the best possible product.
III
Product data
Production
This data sheet contains data from the product specification. Philips Semiconductors reserves the
right to make changes at any time in order to improve the design, manufacturing and supply. Relevant
changes will be communicated via a Customer Product/Process Change Notification (CPCN).
[1]
[2]
Please consult the most recently issued data sheet before initiating or completing a design.
The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
[3]
For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
20. Definitions
Short-form specification — The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Right to make changes — Philips Semiconductors reserves the right to
make changes in the products - including circuits, standard cells, and/or
software - described or contained herein in order to improve design and/or
performance. When the product is in full production (status ‘Production’),
relevant changes will be communicated via a Customer Product/Process
Change Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
license or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are
free from patent, copyright, or mask work right infringement, unless otherwise
specified.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
22. Trademarks
Notice — All referenced brands, product names, service names and
21. Disclaimers
trademarks are the property of their respective owners.
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
23. Contact information
For additional information, please visit: http://www.semiconductors.philips.com
For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com
SA58631
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Preliminary data sheet
Rev. 01 — 1 December 2005
18 of 19
SA58631
Philips Semiconductors
3 W BTL audio amplifier
24. Contents
1
2
3
4
5
6
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 2
7
7.1
7.2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 3
Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 3
8
8.1
8.2
Functional description . . . . . . . . . . . . . . . . . . . 3
Power amplifier . . . . . . . . . . . . . . . . . . . . . . . . . 3
Mode select pin (MODE) . . . . . . . . . . . . . . . . . 4
9
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
Static characteristics. . . . . . . . . . . . . . . . . . . . . 5
Dynamic characteristics . . . . . . . . . . . . . . . . . . 5
Application information. . . . . . . . . . . . . . . . . . . 6
10
11
12
13
14
Test information. . . . . . . . . . . . . . . . . . . . . . . . . 6
Test conditions . . . . . . . . . . . . . . . . . . . . . . . . . 6
BTL application. . . . . . . . . . . . . . . . . . . . . . . . . 7
Single-ended application . . . . . . . . . . . . . . . . 12
General remarks. . . . . . . . . . . . . . . . . . . . . . . 12
SA58631TK PCB demo . . . . . . . . . . . . . . . . . 13
14.1
14.2
14.3
14.4
14.5
15
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 14
16
16.1
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Introduction to soldering surface mount
packages . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Reflow soldering. . . . . . . . . . . . . . . . . . . . . . . 15
Wave soldering . . . . . . . . . . . . . . . . . . . . . . . . 15
Manual soldering . . . . . . . . . . . . . . . . . . . . . . 16
Package related soldering information . . . . . . 16
16.2
16.3
16.4
16.5
17
18
19
20
21
22
23
Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 17
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 17
Data sheet status. . . . . . . . . . . . . . . . . . . . . . . 18
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Contact information . . . . . . . . . . . . . . . . . . . . 18
© Koninklijke Philips Electronics N.V. 2005
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner. The information presented in this document does
not form part of any quotation or contract, is believed to be accurate and reliable and may
be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under
patent- or other industrial or intellectual property rights.
Date of release: 1 December 2005
Document number: SA58631
Published in The Netherlands
相关型号：
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IC AUDIO AMPLIFIER, PBGA16, 1.70 X 1.70 MM, 0.56 MM HEIGHT, WLCSP-16, Audio/Video Amplifier
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