SA58631TK,115 [NXP]
SA58631 - 3 W BTL audio amplifier SON 8-Pin;
| 型号： | SA58631TK,115 |
| 厂家： | 
NXP |
| 描述： | SA58631 - 3 W BTL audio amplifier SON 8-Pin 放大器 光电二极管 商用集成电路 |
| 文件： | 总21页 (文件大小：131K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SA58631
3 W BTL audio amplifier
Rev. 02 — 12 October 2007
Product data sheet
1. General description
The SA58631 is a one channel audio amplifier in an HVSON8 package. It provides power
output of 3 W with an 8 Ω load at 9 V supply. The internal circuit is comprised of a BTL
(Bridge Tied Load) amplifier with a complementary PNP-NPN output stage and
standby/mute logic. The SA58631 is housed in an 8-pin HVSON package which has an
exposed die attach paddle enabling reduced thermal resistance and increased power
dissipation.
2. Features
I Low junction-to-ambient thermal resistance using exposed die attach paddle
I Gain can be fixed with external resistors from 6 dB to 30 dB
I Standby mode controlled by CMOS-compatible levels
I Low standby current < 10 µA
I No switch-on/switch-off plops
I High power supply ripple rejection: 50 dB minimum
I ElectroStatic Discharge (ESD) protection
I Output short circuit to ground protection
I Thermal shutdown protection
3. Applications
I Professional and amateur mobile radio
I Portable consumer products: toys and games
I Personal computer remote speakers
SA58631
NXP Semiconductors
3 W BTL audio amplifier
4. Quick reference data
Table 1.
Quick reference data
VCC = 5 V; Tamb = 25 °C; RL = 8 Ω; f = 1 kHz; VMODE = 0 V; measured in test circuit Figure 3; unless
otherwise specified.
Symbol Parameter
Conditions
operating
Min Typ Max Unit
VCC
Iq
supply voltage
quiescent current
standby current
output power
2.2
9
18
12
10
-
V
[1]
RL = ∞ Ω
-
8
mA
µA
W
Istb
Po
VMODE = VCC
THD+N = 10 %
THD+N = 0.5 %
-
-
1
1.2
0.9
3.0
0.6
-
-
W
THD+N = 10 %;
VCC = 9 V
-
W
THD+N
PSRR
total harmonic distortion-plus-noise Po = 0.5 W
power supply rejection ratio
-
0.15 0.3
%
[2]
[3]
50
40
-
-
-
-
dB
dB
[1] With a load connected at the outputs the quiescent current will increase, the maximum of this increase
being equal to the DC output offset voltage divided by RL.
[2] Supply voltage ripple rejection is measured at the output with a source impedance of Rs = 0 Ω at the input.
The ripple voltage is a sine wave with a frequency of 1 kHz and an amplitude of 100 mV (RMS), which is
applied to the positive supply rail.
[3] Supply voltage ripple rejection is measured at the output, with a source impedance of Rs = 0 Ω at the input.
The ripple voltage is a sine wave with a frequency between 100 Hz and 20 kHz and an amplitude of
100 mV (RMS), which is applied to the positive supply rail.
5. Ordering information
Table 2.
Ordering information
Type
number
Package
Name
Description
Version
SA58631TK HVSON8 plastic thermal enhanced very thin small outline package; SOT909-1
no leads; 8 terminals; body 4 x 4 x 0.85 mm
SA58631_2
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 02 — 12 October 2007
2 of 21
SA58631
NXP Semiconductors
3 W BTL audio amplifier
6. Block diagram
SA58631
4
3
5
8
IN−
IN+
OUT−
R
6
V
CC
R
20 kΩ
20 kΩ
OUT+
2
1
SVR
MODE
STANDBY/MUTE LOGIC
7
GND
002aac005
Fig 1. Block diagram of SA58631
7. Pinning information
7.1 Pinning
terminal 1
index area
MODE
SVR
IN+
1
8
7
6
5
OUT+
GND
2
3
4
SA58631TK
V
CC
IN−
OUT−
002aac006
Transparent top view
Fig 2. Pin configuration for HVSON8
SA58631_2
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 02 — 12 October 2007
3 of 21
SA58631
NXP Semiconductors
3 W BTL audio amplifier
7.2 Pin description
Table 3.
Symbol
MODE
SVR
Pin description
Pin
1
Description
operating mode select (standby, mute, operating)
half supply voltage, decoupling ripple rejection
positive input
2
IN+
3
IN−
4
negative input
OUT−
VCC
5
negative output terminal
supply voltage
6
GND
7
ground
OUT+
8
positive output terminal
8. Functional description
The SA58631 is a single-channel BTL audio amplifier capable of delivering 3 W output
power to an 8 Ω load at THD+N = 10 % using a 9 V power supply. Using the MODE pin,
the device can be switched to standby and mute condition. The device is protected by an
internal thermal shutdown protection mechanism. The gain can be set within a range of
6 dB to 30 dB by external feedback resistors.
8.1 Power amplifier
The power amplifier is a Bridge Tied Load (BTL) amplifier with a complementary
PNP-NPN output stage. The voltage loss on the positive supply line is the saturation
voltage of a PNP power transistor, on the negative side the saturation voltage of an NPN
power transistor. The total voltage loss is < 1 V. With a supply voltage of 9 V and an 8 Ω
loudspeaker, an output power of 3 W can be delivered to the load.
8.2 Mode select pin (MODE)
The device is in Standby mode (with a very low current consumption) if the voltage at the
MODE pin is greater than VCC − 0.5 V, or if this pin is floating. At a MODE voltage in the
range between 1.5 V and VCC − 1.5 V the amplifier is in a mute condition. The mute
condition is useful to suppress plop noise at the output, caused by charging of the input
capacitor.
SA58631_2
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 02 — 12 October 2007
4 of 21
SA58631
NXP Semiconductors
3 W BTL audio amplifier
9. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
−0.3
−0.3
-
Max
+18
Unit
V
VCC
VI
supply voltage
operating
input voltage
VCC + 0.3
1
V
IORM
Tstg
Tamb
VP(sc)
Ptot
repetitive peak output current
storage temperature
ambient temperature
short-circuit supply voltage
total power dissipation
A
non-operating
operating
−55
−40
-
+150
+85
°C
°C
V
[1]
10
HVSON8
-
2.3
W
[1] AC and DC short-circuit safe voltage.
10. Thermal characteristics
Table 5.
Thermal characteristics
Parameter
Symbol
Conditions
Typ
80
Unit
K/W
K/W
Rth(j-a)
thermal resistance from junction to free air
ambient
9.7 cm2 (1.5 in2)
32
[1]
[1]
heat spreader
32 cm2 (5 in2)
heat spreader
28
5
K/W
K/W
Rth(j-sp)
thermal resistance from junction to
solder point
[1] Thermal resistance is 28 K/W with DAP soldered to 32 cm2 (5 in2), 35 µm copper (1 ounce copper) heat
spreader.
SA58631_2
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 02 — 12 October 2007
5 of 21
SA58631
NXP Semiconductors
3 W BTL audio amplifier
11. Static characteristics
Table 6.
Static characteristics
VCC = 5 V; Tamb = 25 °C; RL = 8 Ω; VMODE = 0 V; measured in test circuit Figure 3; unless otherwise specified.
Symbol
VCC
Parameter
Conditions
operating
Min
Typ
Max
18
Unit
V
supply voltage
2.2
9
8
-
[1]
[2]
Iq
quiescent current
RL = ∞ Ω
-
12
mA
µA
V
Istb
standby current
VMODE = VCC
-
10
VO
output voltage
-
2.2
-
-
∆VO(offset)
IIB(IN+)
IIB(IN−)
VMODE
differential output voltage offset
input bias current on pin IN+
input bias current on pin IN−
voltage on pin MODE
-
50
mV
nA
nA
V
-
-
500
500
0.5
-
-
operating
0
-
mute
1.5
-
VCC − 1.5
V
standby
V
-
CC − 0.5
-
VCC
20
V
IMODE
current on pin MODE
0 V < VMODE < VCC
-
µA
[1] With a load connected at the outputs the quiescent current will increase, the maximum of this increase being equal to the DC output
offset voltage divided by RL.
[2] The DC output voltage with respect to ground is approximately 0.5 × VCC
.
12. Dynamic characteristics
Table 7.
Dynamic characteristics
VCC = 5 V; Tamb = 25 °C; RL = 8 Ω; f = 1 kHz; VMODE = 0 V; measured in test circuit Figure 3; unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
1.2
Max
Unit
W
Po
output power
THD+N = 10 %
THD+N = 0.5 %
THD+N = 10 %; VCC = 9 V
Po = 0.5 W
1
-
0.6
0.9
-
W
-
-
3.0
-
W
THD+N
total harmonic
0.15
0.3
%
distortion-plus-noise
[1]
Gv(cl)
closed-loop voltage gain
6
-
-
30
-
dB
∆Zi
differential input
impedance
100
kΩ
[2]
[3]
[4]
[5]
Vn(o)
noise output voltage
-
-
-
-
-
100
µV
dB
dB
µV
PSRR
power supply rejection
ratio
50
40
-
-
-
Vo
output voltage
mute condition
200
[1] Gain of the amplifier is 2 × (R2 / R1) in test circuit of Figure 3.
[2] The noise output voltage is measured at the output in a frequency range from 20 Hz to 20 kHz (unweighted), with a source impedance
of RS = 0 Ω at the input.
[3] Supply voltage ripple rejection is measured at the output with a source impedance of Rs = 0 Ω at the input. The ripple voltage is a
sine wave with a frequency of 1 kHz and an amplitude of 100 mV (RMS), which is applied to the positive supply rail.
[4] Supply voltage ripple rejection is measured at the output, with a source impedance of Rs = 0 Ω at the input. The ripple voltage is a
sine wave with a frequency between 100 Hz and 20 kHz and an amplitude of 100 mV (RMS), which is applied to the positive supply rail.
[5] Output voltage in mute position is measured with an input voltage of 1 V (RMS) in a bandwidth of 20 kHz, which includes noise.
SA58631_2
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 02 — 12 October 2007
6 of 21
SA58631
NXP Semiconductors
3 W BTL audio amplifier
13. Application information
V
R2
56 kΩ
CC
C1
1 µF
R1
11 kΩ
100 nF
100 µF
IN−
IN+
6
4
3
2
1
OUT−
5
8
V
I
SA58631
R
L
SVR
OUT+
MODE
C2
47 µF
7
GND
002aac007
R2
------
R1
Gain = 2 ×
Fig 3. Application diagram of SA58631 BTL differential output configuration
14. Test information
14.1 Test conditions
The junction to ambient thermal resistance, Rth(j-a) = 27.7 K/W for the HVSON8 package
when the exposed die attach paddle is soldered to 32 cm2 (5 in2) area of 35 µm (1 ounce)
copper heat spreader on the demo PCB. The maximum sine wave power dissipation for
Tamb = 25 °C is:
150 – 25
27.7
= 4.5 W
--------------------
Thus, for Tamb = +85 °C the maximum total power dissipation is:
150 – 85
= 2.35 W
--------------------
27.7
The power dissipation versus ambient temperature curve (Figure 5) shows the power
derating profiles with ambient temperature for three sizes of heat spreaders. For a more
modest heat spreader using 9.7 cm2 (1.5 in2) area on the top side of the PCB, the
Rth(j-a) is 31.25 K/W. When the package is not soldered to a heat spreader, the Rth(j-a)
increases to 83.3 K/W.
SA58631_2
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 02 — 12 October 2007
7 of 21
SA58631
NXP Semiconductors
3 W BTL audio amplifier
002aac009
002aac008
5.0
4.0
3.0
2.0
1.0
0
6.0
(3)
(2)
P
(W)
P
o
(W)
R
L
= 8 Ω
16 Ω
4.0
(1)
2.0
0
0
50
100
150
0
5.0
10.0
15.0
20.0
T
(°C)
V
(V)
amb
CC
(1) No heat spreader.
(2) Top only heat spreader (9.7 cm2 (1.5 in2), 35 µm
(1 ounce) copper).
(3) Both top and bottom heat spreader (approximately
32 cm2 (5 in2), 35 µm (1 ounce) copper).
Fig 4. Output power versus supply voltage @
THD+N = 10 %; 32 cm2 (5 in2) heat spreader
Fig 5. Power dissipation versus ambient temperature
14.2 BTL application
Tamb = 25 °C, VCC = 9 V, f = 1 kHz, RL = 8 Ω, Gv = 20 dB, audio band-pass 20 Hz to
20 kHz. The BTL diagram is shown in Figure 3.
The quiescent current has been measured without any load impedance. The total
harmonic distortion + noise (THD+N) as a function of frequency was measured with a
low-pass filter of 80 kHz. The value of capacitor C2 influences the behavior of PSRR at
low frequencies; increasing the value of C2 increases the performance of PSRR. Figure 6
shows three areas: operating, mute and standby. It shows that the DC switching levels of
the mute and standby respectively depends on the supply voltage level.
The following characterization curves show the room temperature performance for
SA58631 using the demo PCB shown in Figure 21. The 8 curves for power dissipation
versus output power (Figure 10 through Figure 17) as a function of supply voltage, heat
spreader area, load resistance and voltage gain show that there is very little difference in
performance with voltage gain; however, there are significant differences with supply
voltage and load resistance.
The curves for THD+N versus output power (Figure 18) show that the SA58631 yields the
best power output using an 8 Ω load at 9 V supply. Under these conditions the part
delivers typically 3 W output power for THD+N = 10 %.
SA58631_2
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 02 — 12 October 2007
8 of 21
SA58631
NXP Semiconductors
3 W BTL audio amplifier
002aac042
002aac043
16
15
V
MODE
(V)
I
q
(mA)
12
8
standby
10
mute
5
0
4
operating
16
0
0
4
8
12
0
4
8
12
16
V
20
(V)
V
(V)
CC
CC
Fig 6. VMODE versus VCC
Fig 7. Iq versus VCC
002aac044
002aac045
10
−20
V
o
(V)
SVRR
(dB)
1
−1
10
−40
−2
−3
−4
−5
−6
10
10
10
10
10
(1)
(1)
(2) (3)
(2)
(3)
−60
−80
2
3
4
5
−1
2
10
10
10
10
10
10
1
10
10
f (Hz)
V
(V)
MODE
VCC = 5 V; RL = 8 Ω; Rs = 0 Ω; VI = 100 mV.
(1) Gv = 30 dB
Band-pass = 22 Hz to 22 kHz.
(1) VCC = 3 V
(2) VCC = 5 V
(3) VCC = 12 V
(2) Gv = 20 dB
(3) Gv = 6 dB
Fig 8. SVRR versus frequency
Fig 9. Vo versus VMODE
SA58631_2
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 02 — 12 October 2007
9 of 21
SA58631
NXP Semiconductors
3 W BTL audio amplifier
002aac027
002aac028
5.0
P
(W)
4.0
5.0
4.0
3.0
2.0
1.0
0
P
(W)
V
= 9.0 V
7.5 V
V
= 9.0 V
7.5 V
CC
CC
3.0
2.0
1.0
0
5.0 V
5.0 V
0
0.6
1.2
1.8
2.4
0
0.6
1.2
1.8
2.4
P
(W)
P (W)
o
o
Fig 10. Power dissipation versus output power;
RL = 4.0 Ω; Gv = 10 dB; 9.7 cm2 (1.5 in2)
heat spreader
Fig 11. Power dissipation versus output power;
RL = 4.0 Ω; Gv = 20 dB; 9.7 cm2 (1.5 in2)
heat spreader
002aac029
002aac030
3.0
3.0
P
(W)
P
(W)
V
= 9.0 V
7.5 V
CC
V
= 9.0 V
7.5 V
CC
2.0
1.0
0
2.0
1.0
0
5.0 V
5.0 V
0
1.0
2.0
3.0
4.0
0
1.0
2.0
3.0
4.0
P
(W)
P (W)
o
o
Fig 12. Power dissipation versus output power;
RL = 8.0 Ω; Gv = 10 dB; 9.7 cm2 (1.5 in2)
heat spreader
Fig 13. Power dissipation versus output power;
RL = 8.0 Ω; Gv = 20 dB; 9.7 cm2 (1.5 in2)
heat spreader
002aac031
002aac032
1.6
1.6
P
(W)
P
(W)
V
= 9.0 V
7.5 V
V
= 9.0 V
7.5 V
CC
CC
1.2
1.2
0.8
0.4
0
0.8
0.4
0
5.0 V
5.0 V
0
1.0
2.0
3.0
0
1.0
2.0
3.0
P
(W)
P (W)
o
o
Fig 14. Power dissipation versus output power;
RL = 16 Ω; Gv = 10 dB; 9.7 cm2 (1.5 in2)
heat spreader
Fig 15. Power dissipation versus output power;
RL = 16 Ω; Gv = 20 dB; 9.7 cm2 (1.5 in2)
heat spreader
SA58631_2
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 02 — 12 October 2007
10 of 21
SA58631
NXP Semiconductors
3 W BTL audio amplifier
002aac033
002aac034
3.0
P
1.6
P
V
= 9.0 V
7.5 V
V
= 9.0 V
7.5 V
CC
CC
(W)
(W)
1.2
2.0
1.0
0
0.8
0.4
0
5.0 V
5.0 V
0
1.0
2.0
3.0
4.0
0
1.0
2.0
3.0
P
(W)
P (W)
o
o
Fig 16. Power dissipation versus output power;
RL = 8.0 Ω; Gv = 20 dB; 32 cm2 (5 in2)
heat spreader
Fig 17. Power dissipation versus output power;
RL = 16 Ω; Gv = 20 dB; 32 cm2 (5 in2)
heat spreader
002aac035
002aac036
2
2
10
10
THD+N
(%)
THD+N
(%)
V
= 5.0 V
7.5 V
9.0 V
V
= 5.0 V
7.5 V
9.0 V
1
1
CC
CC
10
10
1
1
−1
−1
10
10
−2
−2
10
10
−2
−1
1
−2
−1
1
10
10
1
10
10
10
1
10
P
(W)
P (W)
o
o
a. f = 1 kHz; RL = 4 Ω
b. f = 1 kHz; RL = 8 Ω
002aac037
2
10
THD+N
(%)
V
= 5.0 V
7.5 V
9.0 V
1
CC
10
1
−1
10
−2
10
−2
−1
1
10
10
1
10
P
(W)
o
c. f = 1 kHz; RL = 16 Ω
Fig 18. THD+N versus output power
SA58631_2
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 02 — 12 October 2007
11 of 21
SA58631
NXP Semiconductors
3 W BTL audio amplifier
002aac038
002aac039
2.0
THD+N
(%)
1.2
THD+N
(%)
1.6
0.8
0.4
0
1.2
0.8
0.4
0
−1
1
−1
1
10
1
10
10
1
10
f (kHz)
f (kHz)
a. RL = 4 Ω
b. RL = 8 Ω
002aac040
1.0
THD+N
(%)
0.8
0.6
0.4
0.2
0
−1
1
10
1
10
f (kHz)
c. RL = 16 Ω
Fig 19. THD+N versus frequency
SA58631_2
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 02 — 12 October 2007
12 of 21
SA58631
NXP Semiconductors
3 W BTL audio amplifier
14.3 Single-ended application
Tamb = 25 °C; VCC = 7.5 V; f = 1 kHz; RL = 8 Ω; Gv = 20 dB; audio band-pass 20 Hz to
20 kHz.
The Single-Ended (SE) application diagram is shown in Figure 20.
V
R2
110 kΩ
CC
C1
1 µF
R1
11 kΩ
100 µF
100 nF
C3
6
IN−
IN+
4
3
2
1
OUT−
5
8
V
I
470 µF
SA58631
R
L
SVR
OUT+
C2
47 µF
MODE
7
GND
002aac041
R2
Gain =
------
R1
Fig 20. SE application circuit configuration
The capacitor value of C3 in combination with the load impedance determines the low
frequency behavior. The total harmonic distortion + noise as a function of frequency was
measured with a low-pass filter of 80 kHz. The value of the capacitor C2 influences the
behavior of the PSRR at low frequencies; increasing the value of C2 increases the
performance of PSRR.
14.4 General remarks
The frequency characteristics can be adapted by connecting a small capacitor across the
feedback resistor. To improve the immunity of HF radiation in radio circuit applications, a
small capacitor can be connected in parallel with the feedback resistor (56 kΩ); this
creates a low-pass filter.
SA58631_2
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 02 — 12 October 2007
13 of 21
SA58631
NXP Semiconductors
3 W BTL audio amplifier
14.5 SA58631TK PCB demo
The application demo board may be used for evaluation in either BTL or SE configuration
as shown in the schematics in Figure 3 and Figure 20. The demo PCB is laid out for the
32 cm2 (5 in2) heat spreader (total of top and bottom heat spreader area).
top layer
bottom layer
SA58631TK
6.8 k
GND
MS
Rev3
6.8 k
OUT+
47 µF
P1
11 k
INPUT
OUT−
V
CC
GND
002aac047
Fig 21. SA58631TK PCB demo
SA58631_2
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 02 — 12 October 2007
14 of 21
SA58631
NXP Semiconductors
3 W BTL audio amplifier
15. Package outline
HVSON8: plastic thermal enhanced very thin small outline package; no leads;
8 terminals; body 4 x 4 x 0.85 mm
SOT909-1
0
1
2 mm
scale
X
B
A
D
E
A
A
1
c
detail X
terminal 1
index area
e
1
C
terminal 1
index area
M
v
C
C
A
B
e
b
y
y
M
w
C
1
1
4
L
exposed tie bar (4×)
E
h
8
5
D
h
DIMENSIONS (mm are the original dimensions)
(1)
A
max.
(1)
(1)
UNIT
A
1
b
E
e
e
y
c
D
D
E
L
v
w
y
1
h
1
h
0.05
0.00
0.4
0.3
4.1
3.9
3.25
2.95
4.1
3.9
2.35
2.05
0.65
0.40
mm
0.05
0.1
1
0.2
0.8
2.4
0.1
0.05
Note
1. Plastic or metal protrusions of 0.075 mm maximum per side are not included.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
JEITA
05-09-26
05-09-28
SOT909-1
MO-229
Fig 22. Package outline SOT909-1 (HVSON8)
SA58631_2
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 02 — 12 October 2007
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SA58631
NXP Semiconductors
3 W BTL audio amplifier
16. Soldering
This text provides a very brief insight into a complex technology. A more in-depth account
of soldering ICs can be found in Application Note AN10365 “Surface mount reflow
soldering description”.
16.1 Introduction to soldering
Soldering is one of the most common methods through which packages are attached to
Printed Circuit Boards (PCBs), to form electrical circuits. The soldered joint provides both
the mechanical and the electrical connection. There is no single soldering method that is
ideal for all IC packages. Wave soldering is often preferred when through-hole and
Surface Mount Devices (SMDs) are mixed on one printed wiring board; however, it is not
suitable for fine pitch SMDs. Reflow soldering is ideal for the small pitches and high
densities that come with increased miniaturization.
16.2 Wave and reflow soldering
Wave soldering is a joining technology in which the joints are made by solder coming from
a standing wave of liquid solder. The wave soldering process is suitable for the following:
• Through-hole components
• Leaded or leadless SMDs, which are glued to the surface of the printed circuit board
Not all SMDs can be wave soldered. Packages with solder balls, and some leadless
packages which have solder lands underneath the body, cannot be wave soldered. Also,
leaded SMDs with leads having a pitch smaller than ~0.6 mm cannot be wave soldered,
due to an increased probability of bridging.
The reflow soldering process involves applying solder paste to a board, followed by
component placement and exposure to a temperature profile. Leaded packages,
packages with solder balls, and leadless packages are all reflow solderable.
Key characteristics in both wave and reflow soldering are:
• Board specifications, including the board finish, solder masks and vias
• Package footprints, including solder thieves and orientation
• The moisture sensitivity level of the packages
• Package placement
• Inspection and repair
• Lead-free soldering versus PbSn soldering
16.3 Wave soldering
Key characteristics in wave soldering are:
• Process issues, such as application of adhesive and flux, clinching of leads, board
transport, the solder wave parameters, and the time during which components are
exposed to the wave
• Solder bath specifications, including temperature and impurities
SA58631_2
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 02 — 12 October 2007
16 of 21
SA58631
NXP Semiconductors
3 W BTL audio amplifier
16.4 Reflow soldering
Key characteristics in reflow soldering are:
• Lead-free versus SnPb soldering; note that a lead-free reflow process usually leads to
higher minimum peak temperatures (see Figure 23) than a PbSn process, thus
reducing the process window
• Solder paste printing issues including smearing, release, and adjusting the process
window for a mix of large and small components on one board
• Reflow temperature profile; this profile includes preheat, reflow (in which the board is
heated to the peak temperature) and cooling down. It is imperative that the peak
temperature is high enough for the solder to make reliable solder joints (a solder paste
characteristic). In addition, the peak temperature must be low enough that the
packages and/or boards are not damaged. The peak temperature of the package
depends on package thickness and volume and is classified in accordance with
Table 8 and 9
Table 8.
SnPb eutectic process (from J-STD-020C)
Package thickness (mm) Package reflow temperature (°C)
Volume (mm3)
< 350
≥ 350
220
< 2.5
235
220
≥ 2.5
220
Table 9.
Lead-free process (from J-STD-020C)
Package thickness (mm) Package reflow temperature (°C)
Volume (mm3)
< 350
260
350 to 2000
> 2000
260
< 1.6
260
250
245
1.6 to 2.5
> 2.5
260
245
250
245
Moisture sensitivity precautions, as indicated on the packing, must be respected at all
times.
Studies have shown that small packages reach higher temperatures during reflow
soldering, see Figure 23.
SA58631_2
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 02 — 12 October 2007
17 of 21
SA58631
NXP Semiconductors
3 W BTL audio amplifier
maximum peak temperature
= MSL limit, damage level
temperature
minimum peak temperature
= minimum soldering temperature
peak
temperature
time
001aac844
MSL: Moisture Sensitivity Level
Fig 23. Temperature profiles for large and small components
For further information on temperature profiles, refer to Application Note AN10365
“Surface mount reflow soldering description”.
17. Abbreviations
Table 10. Abbreviations
Acronym
BTL
Description
Bridge Tied Load
CMOS
DAP
Complementary Metal Oxide Silicon
Die Attach Paddle
ESD
ElectroStatic Discharge
Negative-Positive-Negative
Printed-Circuit Board
NPN
PCB
PNP
Positive-Negative-Positive
Root Mean Squared
RMS
THD
Total Harmonic Distortion
SA58631_2
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 02 — 12 October 2007
18 of 21
SA58631
NXP Semiconductors
3 W BTL audio amplifier
18. Revision history
Table 11. Revision history
Document ID
SA58631_2
Release date
20071012
Data sheet status
Change notice
Supersedes
Product data sheet
-
SA58631_1
Modifications:
• The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
• Legal texts have been adapted to the new company name where appropriate.
• Figure 4: changed incorrect character font
• Soldering information updated
SA58631_1
20060308
Product data sheet
-
-
SA58631_2
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 02 — 12 October 2007
19 of 21
SA58631
NXP Semiconductors
3 W BTL audio amplifier
19. Legal information
19.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
malfunction of a NXP Semiconductors product can reasonably be expected to
19.2 Definitions
result in personal injury, death or severe property or environmental damage.
NXP Semiconductors accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or applications and therefore
such inclusion and/or use is at the customer’s own risk.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
19.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
19.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
20. Contact information
For additional information, please visit: http://www.nxp.com
For sales office addresses, send an email to: salesaddresses@nxp.com
SA58631_2
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 02 — 12 October 2007
20 of 21
SA58631
NXP Semiconductors
3 W BTL audio amplifier
21. Contents
1
2
3
4
5
6
General description . . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 3
7
7.1
7.2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 3
Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 4
8
8.1
8.2
Functional description . . . . . . . . . . . . . . . . . . . 4
Power amplifier . . . . . . . . . . . . . . . . . . . . . . . . . 4
Mode select pin (MODE) . . . . . . . . . . . . . . . . . 4
9
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 5
Thermal characteristics. . . . . . . . . . . . . . . . . . . 5
Static characteristics. . . . . . . . . . . . . . . . . . . . . 6
Dynamic characteristics . . . . . . . . . . . . . . . . . . 6
Application information. . . . . . . . . . . . . . . . . . . 7
10
11
12
13
14
Test information. . . . . . . . . . . . . . . . . . . . . . . . . 7
Test conditions . . . . . . . . . . . . . . . . . . . . . . . . . 7
BTL application. . . . . . . . . . . . . . . . . . . . . . . . . 8
Single-ended application . . . . . . . . . . . . . . . . 13
General remarks. . . . . . . . . . . . . . . . . . . . . . . 13
SA58631TK PCB demo . . . . . . . . . . . . . . . . . 14
14.1
14.2
14.3
14.4
14.5
15
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 15
16
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Introduction to soldering . . . . . . . . . . . . . . . . . 16
Wave and reflow soldering . . . . . . . . . . . . . . . 16
Wave soldering . . . . . . . . . . . . . . . . . . . . . . . . 16
Reflow soldering . . . . . . . . . . . . . . . . . . . . . . . 17
16.1
16.2
16.3
16.4
17
18
Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 18
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 19
19
Legal information. . . . . . . . . . . . . . . . . . . . . . . 20
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 20
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 20
19.1
19.2
19.3
19.4
20
21
Contact information. . . . . . . . . . . . . . . . . . . . . 20
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2007.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 12 October 2007
Document identifier: SA58631_2
相关型号：
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IC AUDIO AMPLIFIER, PBGA16, 1.70 X 1.70 MM, 0.56 MM HEIGHT, WLCSP-16, Audio/Video Amplifier
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