UPD3753CY [NEC]
2088-BIT CCD LINEAR IMAGE SENSOR WITH PERIPHERAL CIRCUIT; 与外围电路2088位CCD线性图像传感器
| 型号： | UPD3753CY |
| 厂家： | 
NEC |
| 描述： | 2088-BIT CCD LINEAR IMAGE SENSOR WITH PERIPHERAL CIRCUIT |
| 文件： | 总16页 (文件大小：223K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
MOS INTEGRATED CIRCUIT
µPD3753
2088-BIT CCD LINEAR IMAGE SENSOR WITH PERIPHERAL CIRCUIT
The µPD3753 is a 2088-bit high sensitivity CCD (Charge Coupled Device) linear image sensor which
changes optical images to electrical signal.
The µPD3753 consists of 2088-bit photocell array and a line of 2088-bit CCD charge transferred register.
It contains a reset a feed-through level clamp circuit, a pulse generator, and a voltage amplifier to provide
high sensitivity and low noise. It also supports low power consumption with single 5 V power supply. The
µPD3753 can be driven by power supply and three input clocks owing to the built-in reset pulse generator
and a clamp pulse generator.
FEATURES
• Valid photocell
: 2088-bit
• Photocell's pitch
: 14 µm
• High response sensitivity
: Providing a response equal with the existing equivalent NEC
product (µPD3743) to the light from a daylight fluorescent lamp
• Low noise
: Providing about two thirds register imbalance of the existing equivalent
NEC product (µPD3743)
• Peak response wavelength
• Resolution
: 550 nm (green)
: 8 dot/mm across the shorter side of a B4-size (257 × 364 mm) sheet
• Power supply
: +5 V
• Drive clock level
• Scanning speed
• Built-in circuit
: CMOS output under +5 V operation
: 1.0 ms/line
: Reset feed-through level clamp circuit, reset pulse generator, clamp pulse
generator
ORDERING INFORMATION
Part Number
Package
CCD LINEAR IMAGE SENSOR 22 PIN PLASTIC DIP (400 mil)
Quality Grade
Standard
µPD3753CY
Please refer to "Quality grade on NEC Semiconductor Devices" (Document number IEI-1209) published by
NEC Corporation to know the specification of quality grade on the devices and its recommended applications.
The information in this document is subject to change without notice.
Document No. IC-3429
(O. D. No. IC-9002)
Date Published August 1994 P
Printed in Japan
1994
©
µPD3753
BLOCK DIAGRAM
VOD
3
Reset pulse/
clamp pulse
generator
φ 2
15
9
Optical black (OB) 18 bits, invalid 2 bits,
valid photocell 2088 bits, invalid 2 bits
•Voltage amplifier
•Reset feed-through
level clamp circuit
VOUT
19
φ TG
φ 1
CCD register
14
20
13
AGND
DGND
2
µPD3753
PIN CONFIGURATION (Top View)
CCD LINEAR IMAGE SENSOR 22 PIN PLASTIC DIP (400 mil)
No connection
No connection
1
2
NC
NC
VOD
NC
NC
NC
NC
NC
NC
22
21
20
19
18
17
16
15
14
13
12
No connection
No connection
Analog GND
NC
AGND
Output unit drain voltage
No connection
3
4
VOUT
Output
No connection
5
NC
NC
No connection
No connection
No connection
Shift register clock 2
Shift register clock 1
Digital GND
No connection
6
No connection
7
NC
φ
φ
No connection
8
2
φ
TG
Transfer gate clock
No connection
9
1
10
11
NC
NC
DGND
NC
No connection
No connection
PHOTOCELL STRUCTURE DIAGRAM
12
µm
2 µm
µ
Channel stopper
Aluminum
electrode
3
µPD3753
ABSOLUTE MAXIMUM RATINGS (Ta = +25 °C)
Parameter
Output unit drain voltage
Shift register clock voltage
Transfer gate signal voltage
Operating ambient temperature
Storage temperature
Symbol
Ratings
–0.3 to +8
–0.3 to +8
–0.3 to +8
–25 to +60
–40 to +70
Unit
V
VOD
Vφ1, φ2
VφTG
Topt
V
V
°C
°C
Tstg
RECOMMENDED OPERATING CONDITIONS (Ta = –25 to + 60 °C)
Parameter
Output unit drain voltage
Symbol
MIN.
4.7
TYP.
5.0
5.0
0
MAX.
5.3
Unit
V
VOD
Shift register clock φ1, φ2 signal high level
Shift register clock φ1, φ2 signal low level
Transfer gate signal high level
Transfer gate signal low level
Data rate
Vφ1H, φ2H
Vφ1L, φ2L
VφTGH
VφTGL
4.5
VOD + 0.2
+0.5
V
–0.3
4.5
V
Vφ1H
0
Vφ1H
V
–0.3
0.2
+0.5
V
fφR
1
2
MHz
Caution When VφTGH > Vφ1H, image lag increases.
4
µPD3753
ELECTRICAL CHARACTERISTICS
Ta = +25 °C, VOD = 5 V, fφ1 = 1 MHz, data rate = 1 MHz, storage time = 10 ms
light source: 3200 K halogen lamp + C500 (infrared cut filter), input clock = 5 VP-P
Parameter
Saturation voltage
Symbol
Test Conditions
MIN.
1.0
TYP.
MAX.
Unit
Vsat
1.2
0.013
± 2
1.0
± 4
30
V
lx•s
%
Saturation exposure
Photo response non-uniformity
Average dark signal
Dark signal non-uniformity
Power consumption
Output impedance
Response
SE
Daylight color fluorescent lamp
VOUT = 500 mV
PRNU
ADS
DSNU
PW
± 8
8.0
+ 8
50
Light shielding
mV
mV
mW
kΩ
Light shielding
– 8
63
ZO
0.5
90
1
RF
Daylight color fluorescent lamp
VOUT = 1 V
117
V/lx•s
nm
%
Response peak wavelength
Image lag
550
7
IL
14
Offset level
VOS
2.5
3.0
3.5
V
Cφ1
Cφ2
Input capacitance of shift register
clock pin
300
pF
pF
Input capacitance of transfer gate
signal pin
CφTG
100
130
Output fall delay time
Total transfer efficiency
Dynamic range
td
ns
%
TTE
DR
VOUT = 1 V, data rate = 2 MHz
Vsat/DSNU
92
0
375
800
10
times
mV
Reset feed-through noise
Bit noise
RFSN
BN
Light shielding
1500
Light shielding
mVP-P
Modulation transfer function at
nyquist frequency
Resolution
MTF
65
%
Remark When VOD = 4.7 V, the response typically decreases to 90 % of the value under 5 V operation.
5
µPD3753
TIMING CHART 1
φ TG
φ 1
φ 2
VOUT
Invalid
photocell
2 bits
Invalid
photocell
2 bits
V
OUT unstable period
12 bits*
OB (Optical black)
18 bits
Valid photocell 2088 bits
Caution Be sure not to use this period (indicated by *) as the black level, because this part is unstable.
TIMING CHART 2
t1
t2
90%
90%
φ
φ
1
2
10%
90%
10%
90%
10%
10%
td
VOUT
10%
Remark
: Signal output
6
µPD3753
TIMING CHART for φTG, φ1, φ2
t3
t5
t4
90 %
φTG
10 %
t6
t7
90 %
φ1
φ 2
CROSS POINTS for φ1, φ2
φ1
φ 2
2 V or more
2 V or more
Note Adjust cross point of φ1, φ2 by φ1, φ2 pin external input resistors.
(Unit: ns)
Parameter
t1 ,t2
MIN.
0
TYP.
50
MAX.
(100)
–
t3, t4
0
50
t5
650
0
1000
100
(2000)
–
t6, t7
Remark The MAX. in the table above shows the operation range in which the output characteristics are kept
almost enough for general purpose, does not show the limit above which the µPD3753 is destroyed.
7
µPD3753
DEFINITIONS OF CHARACTERISTIC ITEMS
1. Saturation voltage: Vsat
Output signal voltage at which the response linearity is lost.
2. Saturation exposure: SE
Product of intensity of illumination (lx) and storage time (s) when saturation of output voltage occurs.
3. Photo response non-uniformity: PRNU
The peak/bottom ratio to the average output voltage of all the valid bits calculated by the following formula.
VMAX. or VMIN.
–1
n
PRNU (%) =
x 100
1
n
Vj
∑
j=1
n : Number of valid bits
Vj : Output voltage of each bit
n
1
VMIN.
Vj
∑
VMAX.
n
Register Dark
DC level
j=1
4. Average dark signal: ADS
Output average voltage in light shielding.
n
1
Vj
ADS(mV) =
∑
n
j=1
5. Dark signal non-uniformity: DSNU
The difference between peak or bottom output voltage in light shielding and ADS.
ADS
Register Dark
DC level
DSNU MIN.
DSNU MAX.
8
µPD3753
6. Output impedance: Zo
Output pin impedance viewed from outside.
7. Response: R
Output voltage divided by exposure (lx•s).
Note that the response varies with the light source.
8. Image Lag: IL
The rate between the last output voltage and the next one after read out the data of a line.
φ
TG
Light
OFF
ON
VOUT
V
1
V
OUT
V1
× 100 (%)
IL =
VOUT
9. Bit Noise: BN
Output signal distribution of a photocell by scan.
9
µPD3753
STANDARD CHARACTERISTIC CURVES (Ta = +25 °C)
DARK OUTPUT TEMPERATURE
CHARACTERISTIC
STORAGE TIME OUTPUT VOLTAGE
CHARACTERISTIC
2
1
8
4
2
1
0.5
0.2
0.1
0.25
0.1
1
5
10
0
10
20
30
40
50
Storage Time (ms)
°
a
Ambient Temperature T ( C)
SPECTRAL RESPONSE CHARACTERISTIC
100
80
60
40
20
0
400
600
800
1000
1200
Wavelength (nm)
10
µPD3753
POWER SUPPLY VOLTAGE RESPONSE RATIO CHARACTERISTIC
110
100
90
0
4.5
4.7
5.0
5.3
5.5
Power Supply Voltage (V)
11
µPD3753
APPLICATION EXAMPLE
+5 V
+5 V
10 Ω
10 µF
/16 V
0.1µF
+
+
10 µF
/16 V
0.1µF
µPD74HC04
2.2 kΩ
VOUT
µPD3753CY
2SA1005
1
2
3
4
5
6
7
8
9
NC
NC 22
NC 21
φ2
NC
VOD
NC
NC
NC
NC
NC
φTG
100 Ω
AGND 20
VOUT 19
NC 18
100 Ω
47 Ω
NC 17
NC 16
φ2 15
φ1 14
φ1
10 Ω
47 Ω
10 NC
11 NC
DGND 13
NC 12
φTG
The application circuits and their parameters are for references only and are not intended for use in actual design-in's.
12
µPD3753
PACKAGE DIMENSIONS
CCD LINEAR IMAGE SENSOR 22PIN PLASTIC DIP (400 mil)
(Unit : mm)
1bit
1.7±0.3
37.5
44.0±0.3
10.16
2.35±0.2
1
2.54
1.02±0.15
0.46±0.1
25.4
Name
Dimensions
Refractive index
2
Plastic cap
42.9 × 8.35 × 0.7
1.5
1 The bottom of the package
The surface of the chip
2 The thickness of the cap over the chip
22C-1CCD-PKG2
13
µPD3753
RECOMMENDED SOLDERING CONDITIONS
The following conditions (see table below) must be met when soldering this product.
For more details, refer to our document “SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL”
(IEI-1207).
Please consult with our sales offices in case other soldering process is used, or in case soldering is done
under different conditions.
Table 1 Type of Through Hole Device
µPD3753CY: CCD LINEAR IMAGE SENSOR 22 PIN PLASTIC DIP (400 mil)
Soldering Process
Soldering Conditions
Wave soldering (Only lead part)
Solder temperature: 260 °C or below,
Flow time: 10 seconds or below
Partial heating method
Pin temperature: 260 °C or below,
Time: 10 seconds or below
Caution Do not jet molten solder on the surface of package.
14
µPD3753
NOTES FOR CMOS DEVICES
1 PRECAUTION AGAINST ESD FOR SEMICONDUCTORS
Note: Strong electric field, when exposed to a MOS device, can cause destruction of
the gate oxide and ultimately degrade the device operation. Steps must be
taken to stop generation of static electricity as much as possible, and quickly
dissipate it once, when it has occurred. Environmental control must be
adequate. When it is dry, humidifier should be used. It is recommended to
avoid using insulators that easily build static electricity. Semiconductor
devices must be stored and transported in an anti-static container, static
shielding bag or conductive material. All test and measurement tools including
work bench and floor should be grounded. The operator should be grounded
using wrist strap. Semiconductor devices must not be touched with bare
hands. Similar precautions need to be taken for PW boards with semiconductor
devices on it.
2 HANDLING OF UNUSED INPUT PINS FOR CMOS
Note: No connection for CMOS device inputs can be cause of malfunction. If no
connection is provided to the input pins, it is possible that an internal input
level may be generated due to noise, etc., hence causing malfunction. CMOS
devices behave differently than Bipolar or NMOS devices. Input levels of CMOS
devices must be fixed high or low by using a pull-up or pull-down circuitry. Each
unused pin should be connected to VDD or GND with a resistor, if it is considered
to have a possibility of being an output pin. All handling related to the unused
pins must be judged device by device and related specifications governing the
devices.
3 STATUS BEFORE INITIALIZATION OF MOS DEVICES
Note: Power-on does not necessarily define initial status of MOS device. Production
process of MOS does not define the initial operation status of the device.
Immediately after the power source is turned ON, the devices with reset
function have not yet been initialized. Hence, power-on does not guarantee
out-pin levels, I/O settings or contents of registers. Device is not initialized
until the reset signal is received. Reset operation must be executed immedi-
ately after power-on for devices having reset function.
15
µPD3753
[MEMO]
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
The devices listed in this document are not suitable for use in aerospace equipment, submarine cables, nuclear
reactor control systems and life support systems. If customers intend to use NEC devices for above applications
or they intend to use "Standard" quality grade NEC devices for applications not intended by NEC, please contact
our sales people in advance.
Application examples recommended by NEC Corporation
Standard: Computer, Office equipment, Communication equipment, Test and Measurement equipment,
Machine tools, Industrial robots, Audio and Visual equipment, Other consumer products, etc.
Special: Automotive and Transportation equipment, Traffic control systems, Antidisaster systems, Anticrime
systems, etc.
M4 92.6
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