UPD3789CY [NEC]
CCD Sensor, 5348 Horiz pixels, 5348 Vert pixels, 2-2.50V, Rectangular, Through Hole Mount, 10.16 MM, PLASTIC, DIP-32;型号: | UPD3789CY |
厂家: | NEC |
描述: | CCD Sensor, 5348 Horiz pixels, 5348 Vert pixels, 2-2.50V, Rectangular, Through Hole Mount, 10.16 MM, PLASTIC, DIP-32 CD 传感器 换能器 |
文件: | 总20页 (文件大小:151K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DATA SHEET
MOS INTEGRATED CIRCUIT
µPD3798
5348 PIXELS × 3 COLOR CCD LINEAR IMAGE SENSOR
The µPD3798 is a color CCD (Charge Coupled Device) linear image sensor which changes optical images to
electrical signal and has the function of color separation.
The µPD3798 has 3 rows of 5348 pixels, and each row has a single-sided readout type of charge transfer register.
And it has reset feed-through level clamp circuits and voltage amplifiers. Therefore, it is suitable for 600 dpi/A4 color
image scanners, color facsimiles and so on.
FEATURES
• Valid photocell : 5348 pixels × 3
• Photocell's pitch : 7 µm
• Line spacing
• Color filter
• Resolution
: 28 µm (4 lines) Red line-Green line, Green line-Blue line
: Primary colors (red, green and blue), pigment filter (with light resistance 107 lx•hour)
: 24 dot/mm A4 (210 × 297 mm) size (shorter side)
600 dpi US letter (8.5” × 11”) size (shorter side)
• Drive clock level : CMOS output under 5 V operation
• Data rate
: 5 MHz MAX.
: +12 V
• Power supply
• On-chip circuits : Reset feed-through level clamp circuits
Voltage amplifiers
ORDERING INFORMATION
Part Number
Package
µPD3798CY
CCD linear image sensor 32-pin plastic DIP (10.16 mm (400))
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. S14314EJ2V0DS00 (2nd edition)
Date published December 2002 N CP(K)
Printed in Japan
The mark shows major revised points.
©
µPD3798
BLOCK DIAGRAM
φ
φ
1
2
VOD
GND GND
11
30
2
25
24
Photocell
(Blue)
······
······
······
φ
TG1
(Blue)
Transfer gate
23
22
VOUT1
31
CCD analog shift register
(Blue)
Photocell
(Green)
φ
TG2
(Green)
Transfer gate
VOUT2
(Green)
CCD analog shift register
32
Photocell
(Red)
φ
TG3
(Red)
Transfer gate
10
VOUT3
(Red)
CCD analog shift register
1
8
9
3
4
φ
φ
1
2
φ
φ
RB
CLB
2
Data Sheet S14314EJ2V0DS
µPD3798
PIN CONFIGURATION (Top View)
CCD linear image sensor 32-pin plastic DIP (10.16 mm (400))
•
µPD3798CY
Output signal 3 (Red)
V
OUT
3
32
V
V
V
OUT
2
1
Output signal 2 (Green)
1
2
Ground
GND
31
30
29
28
27
26
25
24
23
OUT
OD
Output signal 1 (Blue)
Output drain voltage
No connection
Reset gate clock
φ
3
RB
Reset feed-through level
clamp clock
φ
CLB
4
NC
NC
IC
No connection
Internal connection
Internal connection
5
No connection
NC
IC
6
Internal connection
Internal connection
Shift register clock 2
IC
7
IC
φ
φ
φ
φ
φ
2
1
2
8
Shift register clock 2
Shift register clock 1
φ
9
1
Shift register clock 1
φ
TG3
Transfer gate clock 3
(for Red)
10
11
12
13
14
15
16
TG1
TG2
Transfer gate clock 1
(for Blue)
22
21
Transfer gate clock 2
(for Green)
GND
IC
Ground
Internal connection
Internal connection
Internal connection
Internal connection
No connection
IC
IC
20
19
18
17
IC
NC
NC
NC
No connection
No connection
NC
NC
No connection
No connection
NC
No connection
Cautions 1. Leave pins 6, 7, 12, 13, 20, 21, 26, 27 (IC) unconnected.
2. Connect the No connection pins (NC) to GND.
Data Sheet S14314EJ2V0DS
3
µPD3798
PHOTOCELL STRUCTURE DIAGRAM
PHOTOCELL ARRAY STRUCTURE DIAGRAM
(Line spacing)
7 µm
Blue photocell array
Green photocell array
Red photocell array
3
µ
m
4
µ
m
4 lines
(28 µm)
7 µm
7 µm
µ
Channel stopper
4 lines
(28 µm)
Aluminum
shield
4
Data Sheet S14314EJ2V0DS
µPD3798
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter
Output drain voltage
Symbol
Ratings
–0.3 to +15
–0.3 to +8
–0.3 to +8
–0.3 to +8
–0.3 to +8
–25 to +60
–40 to +70
Unit
V
VOD
Shift register clock voltage
Vφ1, Vφ2
VφRB
V
Reset gate clock voltage
V
Reset feed-through level clamp clock voltage
Transfer gate clock voltage
Operating ambient temperatureNote
Storage temperature
VφCLB
V
VφTG1 to VφTG3
TA
V
°C
°C
Tstg
Note Use at the condition without dew condensation.
Caution Product quality may suffer if the absolute maximum rating is exceeded even momentarily for any
parameter. That is, the absolute maximum ratings are rated values at which the product is on the
verge of suffering physical damage, and therefore the product must be used under conditions that
ensure that the absolute maximum ratings are not exceeded.
RECOMMENDED OPERATING CONDITIONS (TA = +25°C)
Parameter
Output drain voltage
Symbol
MIN.
11.4
4.5
TYP.
12.0
5.0
0
MAX.
12.6
5.5
Unit
V
VOD
Shift register clock high level
Shift register clock low level
Reset gate clock high level
Vφ1H, Vφ2H
Vφ1L, Vφ2L
VφRBH
V
–0.3
4.5
+0.5
5.5
V
5.0
0
V
Reset gate clock low level
VφRBL
–0.3
4.5
+0.5
5.5
V
Reset feed-through level clamp clock high level
Reset feed-through level clamp clock low level
Transfer gate clock high level
Transfer gate clock low level
Data rate
VφCLBH
5.0
V
VφCLBL
–0.3
4.5
0
+0.5
V
Vφ1HNote
Vφ1HNote
VφTG1H to VφTG3H
VφTG1L to VφTG3L
fφRB
V
–0.3
–
0
+0.5
5.0
V
1.0
MHz
Note When Transfer gate clock high level (VφTG1H to VφTG3H) is higher than Shift register clock high level (Vφ1H),
Image lag can increase.
Data Sheet S14314EJ2V0DS
5
µPD3798
ELECTRICAL CHARACTERISTICS
TA = +25 °C, VOD = 12 V, data rate (fφRB) = 1 MHz, storage time = 5.5 ms, input signal clock = 5 Vp-p
light source: 3200 K halogen lamp +C-500S (infrared cut filter, t = 1mm) + HA-50 (heat absorbing filter, t = 3 mm)
Parameter
Saturation voltage
Saturation exposure
Symbol
Vsat
Test Conditions
MIN.
2.0
–
TYP.
2.5
MAX.
–
Unit
V
Red
SER
SEG
SEB
PRNU
ADS
DSNU
PW
0.223
0.245
0.409
6
–
lx•s
lx•s
lx•s
%
Green
Blue
–
–
–
–
Photo response non-uniformity
Average dark signal
VOUT = 1.0 V
–
20
2.0
3.0
540
1
Light shielding
Light shielding
–
0.2
mV
mV
mW
kΩ
Dark signal non-uniformity
Power consumption
–
1.5
–
360
0.5
Output impedance
ZO
–
Response
Red
RR
7.8
7.1
4.2
–
11.2
10.2
6.1
14.6
13.3
8.0
7.0
7.0
–
V/lx•s
V/lx•s
V/lx•s
%
Green
Blue
RG
RB
Image lag
IL
VOUT = 1.0 V
1.5
Note1
Offset level
VOS
4.0
–
5.5
V
Note2
Output fall delay time
td
VOUT = 1.0 V
40
ns
Total transfer efficiency
Response peak
TTE
VOUT = 1.0 V,
92
98
–
%
data rate = 5 MHz
Red
–
630
540
–
nm
nm
Green
Blue
–
–
–
460
–
–
nm
Dynamic range
DR1
DR2
RFTN
σ
Vsat /DSNU
Vsat /σ
–
1666
2500
–300
1.0
times
times
mV
–
–1000
–
–
Note1
Reset feed-through noise
Random noise
Light shielding
Light shielding
+500
–
mV
Notes 1. Refer to TIMING CHART 2.
2. When the fall time of φ1 (t1) is the TYP. value (refer to TIMING CHART 2).
6
Data Sheet S14314EJ2V0DS
µPD3798
INPUT PIN CAPACITANCE (TA = +25 °C, VOD = 12 V)
Parameter
Symbol Pin name Pin No.
MIN.
TYP.
400
400
400
400
15
MAX.
Unit
pF
pF
pF
pF
pF
pF
pF
pF
pF
Shift register clock pin capacitance 1
Cφ1
φ1
9
24
8
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Shift register clock pin capacitance 2
Reset gate clock pin capacitance
Cφ2
φ2
25
3
CφRB
φRB
Reset feed-through level clamp clock pin capacitance CφCLB
Transfer gate clock pin capacitance
φCLB
φTG1
φTG2
φTG3
4
15
CφTG
23
22
10
100
100
100
Remark Pins 9 and 24 (φ1), 8 and 25 (φ2) are each connected inside of the device.
Data Sheet S14314EJ2V0DS
7
TIMING CHART 1 (for each color)
φTG1 to
φ
TG3
φ
φ
1
2
φ
RB
φ
CLB
Note
Note
V
OUT1 to
VOUT
3
Optical black (16 pixels)
Valid photocell (5348 pixels)
Invalid photocell
(2 pixels)
Invalid photocell
(3 pixels)
Note Input the φRB and CLB pulses continuously during this period, too.
φ
µ
µPD3798
TIMING CHART 2 (for each color)
t1
t2
90 %
10 %
φ
φ
1
2
90 %
10 %
t4
t6
t5
t3
90 %
10 %
φ
RB
t8
t10
t9
t7 t11
90 %
10 %
+
_
φ
CLB
t
d
RFTN
RFTN
V
OUT
VOS
10 %
Data Sheet S14314EJ2V0DS
9
µPD3798
φTG1 to φTG3, φ1, φ2 TIMING CHART
t12
t13
t14
90 %
10 %
φ
TG1 to TG3
φ
t16
t15
90 %
φ
φ
1
2
Symbol
t1, t2
MIN.
0
TYP.
MAX.
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
25
50
–
–
–
–
–
–
–
–
–
–
–
t3
20
70
0
t4
250
25
t5, t6
t7
30
0
50
t8, t9
t10
t11
25
30
5
50
15
t12, t13
t14
0
50
3000
900
10000
1000
t15, t16
φ1, φ2 cross points
φ
2
1
2.0 V or more
0.5 V or more
φ
Remark Adjust cross points of φ1 and φ2 with input resistance of each pin.
10
Data Sheet S14314EJ2V0DS
µPD3798
DEFINITIONS OF CHARACTERISTIC ITEMS
1. Saturation voltage: Vsat
Output signal voltage at which the response linearity is lost.
2. Saturation exposure: SE
Product of intensity of illumination (IX) and storage time (s) when saturation of output voltage occurs.
3. Photo response non-uniformity: PRNU
The output signal non-uniformity of all the valid pixels when the photosensitive surface is applied with the light
of uniform illumination. This is calculated by the following formula.
∆x
PRNU (%) =
× 100
x
∆x : maximum of x
5348
j
− x
x
j
Σ
j=1
5348
: Output voltage of valid pixel number j
x =
xj
VOUT
x
Register Dark
DC level
∆x
4. Average dark signal: ADS
Average output signal voltage of all the valid pixels at light shielding. This is calculated by the following formula.
5348
dj
Σ
j=1
ADS (mV) =
5348
dj : Dark signal of valid pixel number j
5. Dark signal non-uniformity: DSNU
Absolute maximum of the difference between ADS and voltage of the highest or lowest output pixel of all the valid
pixels at light shielding. This is calculated by the following formula.
DSNU (mV) : maximum of dj − ADS j = 1 to 5348
dj : Dark signal of valid pixel number j
V
OUT
ADS
Register Dark
DC level
DSNU
Data Sheet S14314EJ2V0DS
11
µPD3798
6. Output impedance: ZO
Impedance of the output pins viewed from outside.
7. Response: R
Output voltage divided by exposure (Ix•s).
Note that the response varies with a light source (spectral characteristic).
8. Image Lag: IL
The rate between the last output voltage and the next one after read out the data of a line.
TG
Light
ON
OFF
V
OUT
V1
VOUT
V1
IL (%) =
×100
VOUT
9. Random noise: σ
Random noise σ is defined as the standard deviation of a valid pixel output signal with 100 times (=100 lines)
data sampling at dark (light shielding).
100
100
(V
i
– V)2
100
1
Σ
σ (mV) =
, V =
Vi
100 Σ
i=1
i=1
Vi: A valid pixel output signal among all of the valid pixels for each color
V
V
1
2
V
OUT
line 1
line 2
V
100
line 100
This is measured by the DC level sampling of only the signal level, not by CDS (Correlated Double Sampling).
12
Data Sheet S14314EJ2V0DS
µPD3798
STANDARD CHARACTERISTIC CURVES (Reference Value)
DARK OUTPUT TEMPERATURE
CHARACTERISTIC
STORAGE TIME OUTPUT VOLTAGE
CHARACTERISTIC (TA = +25 °C)
8
2
4
1
2
1
0.5
0.2
0.25
0.1
0.1
0
10
20
30
40
50
1
5
10
Operating Ambient Temperature TA(°C)
Storage Time (ms)
TOTAL SPECTRAL RESPONSE CHARACTERISTICS
(without infrared cut filter and heat absorbing filter) (TA = +25 °C)
100
80
R
B
G
60
40
20
G
B
0
400
500
600
700
800
Wavelength (nm)
Data Sheet S14314EJ2V0DS
13
µPD3798
APPLICATION CIRCUIT EXAMPLE
+5 V
+12 V
10 Ω
+
+
µ
PD3798
10
µ
F/16 V 0.1
µ
F
0.1 µF 47 µF/25 V
1
2
3
32
31
30
29
28
B3
V
OUT
3
V
OUT
2
B2
B1
GND
VOUT
1
47
47
Ω
Ω
V
OD
φ
RB
φ
φ
RB
4
5
6
7
+5 V
NC
NC
CLB
φ
CLB
NC
+
27
26
25
24
23
22
IC
IC
IC
IC
0.1 µF 10 µF/16 V
4.7 Ω
4.7 Ω
4.7 Ω
4.7 Ω
4.7 Ω
4.7 Ω
4.7 Ω
8
9
φ
φ
φ
2
φ
φ
2
1
φ
2
1
φ
φ
1
10
TG3
φ
TG1
TG
11
GND
IC
φ
TG2
12
13
14
15
16
21
20
19
18
IC
IC
IC
NC
NC
NC
NC
NC
17
NC
Cautions 1. Leave pins 6, 7, 12, 13, 20, 21, 26, 27 (IC) unconnected.
2. Connect the No connection pins (NC) to GND.
Remark The inverters shown in the above application circuit example are the 74HC04.
14
Data Sheet S14314EJ2V0DS
µPD3798
B1 to B3 EQUIVALENT CIRCUIT
12 V
+
µ
47 F/25 V
100 Ω
100 Ω
CCD
2SC945
V
OUT
2 kΩ
Data Sheet S14314EJ2V0DS
15
µPD3798
PACKAGE DRAWING
µ
PD3798CY
CCD LINEAR IMAGE SENSOR 32-PIN PLASTIC DIP (10.16 mm (400) )
(Unit : mm)
55.2±0.5
54.8±0.5
1st valid pixel
1
4.2±0.3
32
17
16
1
46.7
2.0
12.6±0.5
4.1±0.5
10.16±0.20
1.02±0.15
4.55±0.5
2
(1.80)
3
2.58±0.3
0.46±0.1
0.25±0.05
2.54±0.25
(5.42)
+0.7
10.16
−0.2
4.21±0.5
Name
Dimensions
Refractive index
Plastic cap
52.2×6.4×0.7
1.5
1 1st valid pixel
The center of the pin1
2 The surface of the CCD chip
3 The bottom of the package
The top of the cap
The surface of the CCD chip
32C-1CCD-PKG2-2
16
Data Sheet S14314EJ2V0DS
µPD3798
RECOMMENDED SOLDERING CONDITIONS
When soldering this product, it is highly recommended to observe the conditions as shown below.
If other soldering processes are used, or if the soldering is performed under different conditions, please make sure
to consult with our sales offices.
Type of Through-hole Device
µPD3798CY : CCD linear image sensor 32-pin plastic DIP (10.16 mm (400))
Process
Conditions
Partial heating method
Pin temperature: 300 °C or below,
Heat time: 3 seconds or less (per pin)
Cautions 1. During assembly care should be taken to prevent solder or flux from contacting the plastic cap.
The optical characteristics could be degraded by such contact.
2. Soldering by the solder flow method may have deleterious effects on prevention of plastic cap
soiling and heat resistance. So the method cannot be guaranteed.
Data Sheet S14314EJ2V0DS
17
µPD3798
NOTES ON HANDLING THE PACKAGES
1
DUST AND DIRT PROTECTING
The optical characteristics of the CCD will be degraded if the cap is scratched during cleaning. Don’t either
touch plastic cap surface by hand or have any object come in contact with plastic cap surface. Should dirt
stick to a plastic cap surface, blow it off with an air blower. For dirt stuck through electricity ionized air is
recommended. And if the plastic cap surface is grease stained, clean with our recommended solvents.
CLEANING THE PLASTIC CAP
Care should be taken when cleaning the surface to prevent scratches.
We recommend cleaning the cap with a soft cloth moistened with one of the recommended solvents below.
Excessive pressure should not be applied to the cap during cleaning. If the cap requires multiple cleanings it is
recommended that a clean surface or cloth be used.
RECOMMENDED SOLVENTS
The following are the recommended solvents for cleaning the CCD plastic cap.
Use of solvents other than these could result in optical or physical degradation in the plastic cap.
Please consult your sales office when considering an alternative solvent.
Solvents
Ethyl Alcohol
Symbol
EtOH
MeOH
IPA
Methyl Alcohol
Isopropyl Alcohol
N-methyl Pyrrolidone
NMP
2
MOUNTING OF THE PACKAGE
The application of an excessive load to the package may cause the package to warp or break, or cause chips
to come off internally. Particular care should be taken when mounting the package on the circuit board. Don't
have any object come in contact with plastic cap. You should not reform the lead frame. We recommended to
use a IC-inserter when you assemble to PCB.
Also, be care that the any of the following can cause the package to crack or dust to be generated.
1. Applying heat to the external leads for an extended period of time with soldering iron.
2. Applying repetitive bending stress to the external leads.
3. Rapid cooling or heating
3
4
OPERATE AND STORAGE ENVIRONMENTS
Operate in clean environments. CCD image sensors are precise optical equipment that should not be subject
to mechanical shocks. Exposure to high temperatures or humidity will affect the characteristics. So avoid
storage or usage in such conditions.
Keep in a case to protect from dust and dirt. Dew condensation may occur on CCD image sensors when the
devices are transported from a low-temperature environment to a high-temperature environment. Avoid such
rapid temperature changes.
For more details, refer to our document "Review of Quality and Reliability Handbook" (C12769E)
ELECTROSTATIC BREAKDOWN
CCD image sensor is protected against static electricity, but destruction due to static electricity is sometimes
detected. Before handling be sure to take the following protective measures.
1. Ground the tools such as soldering iron, radio cutting pliers of or pincer.
2. Install a conductive mat or on the floor or working table to prevent the generation of static electricity.
3. Either handle bare handed or use non-chargeable gloves, clothes or material.
4. Ionized air is recommended for discharge when handling CCD image sensor.
5. For the shipment of mounted substrates, use box treated for prevention of static charges.
6. Anyone who is handling CCD image sensors, mounting them on PCBs or testing or inspecting PCBs on
which CCD image sensors have been mounted must wear anti-static bands such as wrist straps and ankle
straps which are grounded via a series resistance connection of about 1 MΩ.
18
Data Sheet S14314EJ2V0DS
µPD3798
NOTES FOR CMOS DEVICES
1
PRECAUTION AGAINST ESD FOR SEMICONDUCTORS
Note:
Strong electric field, when exposed to a MOS device, can cause destruction of the gate oxide and
ultimately degrade the device operation. Steps must be taken to stop generation of static electricity
as much as possible, and quickly dissipate it once, when it has occurred. Environmental control
must be adequate. When it is dry, humidifier should be used. It is recommended to avoid using
insulators that easily build static electricity. Semiconductor devices must be stored and transported
in an anti-static container, static shielding bag or conductive material. All test and measurement
tools including work bench and floor should be grounded. The operator should be grounded using
wrist strap. Semiconductor devices must not be touched with bare hands. Similar precautions need
to be taken for PW boards with semiconductor devices on it.
2
HANDLING OF UNUSED INPUT PINS FOR CMOS
Note:
No connection for CMOS device inputs can be cause of malfunction. If no connection is provided
to the input pins, it is possible that an internal input level may be generated due to noise, etc., hence
causing malfunction. CMOS devices behave differently than Bipolar or NMOS devices. Input levels
of CMOS devices must be fixed high or low by using a pull-up or pull-down circuitry. Each unused
pin should be connected to VDD or GND with a resistor, if it is considered to have a possibility of
being an output pin. All handling related to the unused pins must be judged device by device and
related specifications governing the devices.
3
STATUS BEFORE INITIALIZATION OF MOS DEVICES
Note:
Power-on does not necessarily define initial status of MOS device. Production process of MOS
does not define the initial operation status of the device. Immediately after the power source is
turned ON, the devices with reset function have not yet been initialized. Hence, power-on does
not guarantee out-pin levels, I/O settings or contents of registers. Device is not initialized until the
reset signal is received. Reset operation must be executed immediately after power-on for devices
having reset function.
Data Sheet S14314EJ2V0DS
19
µPD3798
•
The information in this document is current as of November, 2002. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC Electronics data
sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not
all products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
• No part of this document may be copied or reproduced in any form or by any means without the prior
written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may
appear in this document.
•
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property rights of third parties by or arising from the use of NEC Electronics products listed in this document
or any other liability arising from the use of such products. No license, express, implied or otherwise, is
granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others.
Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of a customer's equipment shall be done under the full
responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by
customers or third parties arising from the use of these circuits, software and information.
•
• While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products,
customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To
minimize risks of damage to property or injury (including death) to persons arising from defects in NEC
Electronics products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment and anti-failure features.
• NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and
"Specific".
The "Specific" quality grade applies only to NEC Electronics products developed based on a customer-
designated "quality assurance program" for a specific application. The recommended applications of an NEC
Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of
each NEC Electronics product before using it in a particular application.
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots.
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support).
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC
Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications
not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to
determine NEC Electronics' willingness to support a given application.
(Note)
(1)
"NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its
majority-owned subsidiaries.
(2)
"NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as
defined above).
M8E 02. 11-1
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