UPD3794 [NEC]
2700 PIXELS x 3 COLOR CCD LINEAR IMAGE SENSOR; 2700像素× 3彩色CCD线性图像传感器
| 型号： | UPD3794 |
| 厂家： | 
NEC |
| 描述： | 2700 PIXELS x 3 COLOR CCD LINEAR IMAGE SENSOR |
| 文件： | 总20页 (文件大小：167K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
MOS INTEGRATED CIRCUIT
µPD3794
2700 PIXELS × 3 COLOR CCD LINEAR IMAGE SENSOR
The µPD3794 is a color CCD (Charge Coupled Device) linear image sensor which changes optical images to
electrical signal and has the function of color separation.
The µPD3794 has 3 rows of 2700 pixels, and each row has a single-sided readout type of charge transfer register.
And it has reset feed-through level clamp circuits, a clamp pulse generation circuit, an RGB selector and voltage
amplifiers. Therefore, it is suitable for 300 dpi/A4 color image scanners, color facsimiles and so on.
FEATURES
• Valid photocell
: 2700 pixels × 3
• Photocell's pitch : 8 µm
• Line spacing
• Color filter
• Resolution
: 32 µm (4 lines) Green line-Blue line, Blue line-Red line
: Primary colors (red, green and blue), pigment filter (with light resistance 107 lx•hour)
: 12 dot/mm A4 (210 × 297 mm) size (shorter side)
300 dpi US letter (8.5” × 11”) size (shorter side)
• Drive clock level : CMOS output under 5 V operation
• Data rate
: 4 MHz MAX.
: +12 V
• Power supply
• On-chip circuits : Reset feed-through level clamp circuits
Clamp pulse generation circuit
RGB selector
Voltage amplifiers
ORDERING INFORMATION
Part Number
Package
µPD3794CY
CCD linear image sensor 22-pin plastic DIP (400 mil)
The information in this document is subject to change without notice.
Document No.S13125EJ1V0DS00(1st edition)
Date published December 1997 N CP(K)
Printed in Japan
1997
©
µPD3794
BLOCK DIAGRAM
φ
1
SEL1
22
GND
15
SEL2
20
V
OD
GND GND
11
19
2
14
Photocell
(Green)
······
······
······
φ
TG1
(Green)
Transfer gate
13
12
CCD analog shift register
Photocell
(Blue)
φ
TG2
(Blue)
Transfer gate
1
VOUT
CCD analog shift register
Photocell
(Red)
φ
TG3
(Red)
Transfer gate
10
CCD analog shift register
Clamp pulse
generator
9
3
φ
2
φ
RB
2
µPD3794
PIN CONFIGURATION (Top View)
CCD linear image sensor 22-pin plastic DIP (400 mil)
Output signal
Ground
V
OUT
22
SEL1
NC
RGB select input 1
1
2
GND
21
20
19
18
17
16
15
14
13
12
No connection
Reset gate clock
No connection
φ
3
SEL2
RGB select input2
Output drain voltage
RB
NC
NC
NC
NC
NC
4
VOD
No connection
No connection
No connection
5
NC
No connection
No connection
No connection
Ground
6
NC
7
NC
GND
8
No connection
φ
9
φ
φ
φ
2
1
Shift register clock 2
Shift register clock 1
φ
TG3
Transfer gate clock 3
(for Red)
10
11
TG1
TG2
Transfer gate clock 1
(for Green)
Transfer gate clock 2
(for Blue)
GND
Ground
PHOTOCELL STRUCTURE DIAGRAM
PHOTOCELL ARRAY STRUCTURE DIAGRAM
(Line spacing)
8 µm
8 µm
8 µm
Green photocell array
Blue photocell array
Red photocell array
3
5 µm
µ
m
4 lines
(32 µm)
µ
Channel stopper
4 lines
(32 µm)
Aluminum
shield
3
µPD3794
ABSOLUTE MAXIMUM RATINGS (TA = +25 °C)
Parameter
Output drain voltage
Symbol
Ratings
–0.3 to +15
–0.3 to +8
–0.3 to +8
–0.3 to +8
–0.3 to +8
–25 to +60
–40 to +70
Unit
V
VOD
Shift register clock voltage
Reset gate clock voltage
Transfer gate clock voltage
RGB select input voltage
Operating ambient temperature
Storage temperature
Vφ1, Vφ2
VφRB
V
V
VφTG1 to VφTG3
VSEL1,VSEL2
TA
V
V
°C
°C
Tstg
Caution
Exposure to ABSOLUTE MAXIMUM RATINGS for extended periods may affect device reliability;
exceeding the ratings could cause permanent damage. The parameters apply independently.
RECOMMENDED OPERATING CONDITIONS (TA = +25 °C)
Parameter
Output drain voltage
Symbol
MIN.
11.4
4.5
TYP.
12.0
5.0
0
MAX.
12.6
5.5
Unit
V
VOD
Shift register clock high level
Shift register clock low level
Reset gate clock high level
Reset gate clock low level
Transfer gate clock high level
Transfer gate clock low level
RGB select input high level
RGB select input low level
Data rate
Vφ1H, Vφ2H
Vφ1L, Vφ2L
VφRBH
V
–0.3
4.5
+0.5
5.5
V
5.0
V
VφRBL
–0.3
4.5
0
+0.5
V
Vφ1HNote
Vφ1HNote
VφTG1H to VφTG3H
VφTG1L to VφTG3L
VSEL1H, VSEL2H
VSEL1L, VSEL2L
fφRB
V
–0.3
4.5
0
+0.5
5.5
V
5.0
0
V
–0.3
–
+0.5
4.0
V
1.0
MHz
Note When Transfer gate clock high level (VφTG1H to VφTG3H) is higher than Shift register clock high level (Vφ1H),
Image lag can increase.
4
µPD3794
ELECTRICAL CHARACTERISTICS
TA = +25 °C, VOD = 12 V, data rate (fφRB) = 1 MHz, storage time = 10 ms,
light source: 3200 K halogen lamp +C-500S (infrared cut filter, t = 1mm), input signal clock = 5 Vp-p
Parameter
Saturation voltage
Saturation exposure
Symbol
Vsat
Test Conditions
MIN.
2.0
TYP.
3.0
MAX.
Unit
V
Red
SER
SEG
SEB
PRNU
ADS
DSNU
PW
0.205
0.225
0.375
6
lx•s
lx•s
lx•s
%
Green
Blue
Photo response non-uniformity
Average dark signal
VOUT = 1.0 V
20
5.0
Light shielding
Light shielding
0.5
mV
mV
mW
kΩ
Dark signal non-uniformity
Power consumption
4.0
10.0
600
1
300
0.5
Output impedance
ZO
Response
Red
RR
10.3
9.4
14.6
13.3
8.0
18.9
17.2
10.4
10.0
7.5
V/lx•s
V/lx•s
V/lx•s
%
Green
Blue
RG
RB
5.6
Image lag
IL
VOUT = 1.0 V
5.0
Note1
Offset level
VOS
4.5
92
6.0
V
Note2
Output fall delay time
td
VOUT = 1.0 V
70
ns
Total transfer efficiency
TTE
VOUT = 1.0 V,
98
%
data rate = 4 MHz
Response peak
Red
630
540
460
750
3000
–300
1.0
nm
nm
Green
Blue
nm
Dynamic range
DR1
DR2
RFTN
σ
Vsat /DSNU
Vsat /σ
times
times
mV
Note1
Reset feed-through noise
Random noise
Light shielding
Light shielding
–1000
–
+500
–
mV
Notes 1. Refer to TIMING CHART 2.
2. When the fall time of φ1 (t1) is the TYP. value (refer to TIMING CHART 2).
5
µPD3794
INPUT PIN CAPACITANCE (TA = +25 °C, VOD = 12 V)
Parameter
Symbol Pin name Pin No.
MIN.
TYP.
300
300
20
MAX.
Unit
pF
pF
pF
pF
pF
pF
pF
pF
Shift register clock pin capacitance 1
Shift register clock pin capacitance 2
Reset gate clock pin capacitance
Transfer gate clock pin capacitance
Cφ1
φ1
14
9
Cφ2
φ2
CφRB
CφTG
φRB
φTG1
φTG2
φTG3
SEL1
SEL2
3
13
12
10
22
20
50
50
50
RGB select input pin capacitance
CSEL
50
50
RGB SELECT FUNCTION
RGB select input
Output color
SEL1
High level
High level
Low level
Low level
SEL2
High level
Low level
High level
Low level
Blue
Green
Red
Prohibited
6
TIMING CHART 1-1
SEL1
SEL2
φ TG1 to
a
b
φ TG3
φ 1
φ 2
φ RB
Note
Note
V
OUT
(Blue)
Optical black
(48 pixels)
Valid photocell (2700 pixels)
Invalid photocell
(2 pixels)
Invalid photocell
(3 pixels)
µ
Input the φRB pluse continuously during this period, too.
Note
TIMING CHART 1-2
SEL1
SEL2
φ TG1 to
b
c
φ TG3
φ 1
φ 2
φ RB
Note
Note
V
OUT
(Green)
Optical black
(48 pixels)
Valid photocell (2700 pixels)
Invalid photocell
(2 pixels)
Invalid photocell
(3 pixels)
Input the φRB pluse continuously during this period, too.
Note
µ
TIMING CHART 1-3
SEL1
SEL2
φ TG1 to
c
a
φ TG3
φ 1
φ 2
φ RB
Note
Note
V
OUT
(Red)
Optical black
(48 pixels)
Valid photocell (2700 pixels)
Invalid photocell
(2 pixels)
Invalid photocell
(3 pixels)
µ
Input the φRB pluse continuously during this period, too.
Note
µPD3794
TIMING CHART 2 (for each color)
t1
t2
90 %
10 %
φ
φ
1
2
90 %
10 %
t5
t6
t3
t4
90 %
10 %
φ
RB
+
_
td
RFTN
RFTN
VOUT
VOS
10 %
φTG1 to φTG3, φ1, φ2 TIMING CHART
t8
t9
t7
90 %
φ
TG1 to TG3
φ
10 %
t10
t11
90 %
φ
1
φ
2
Symbol
t1, t2
MIN.
0
TYP.
25
MAX.
Unit
ns
ns
ns
ns
ns
ns
ns
t3
30
50
t4
150
0
250
25
t5, t6
t7
3000
0
10000
50
t8, t9
t10, t11
900
1000
φ1, φ2 cross points
φ
1
2
2 V or more
2 V or more
φ
Remark Adjust cross points of φ1 and φ2 with input resistance of each pin.
10
µPD3794
APPLICATION TIMING EXAMPLE (for reference)
The µPD3794 can be operated under the following timing to switch Red, Green, and Blue outputs and get each
color data in a 1-pixel period. However the offset level of each color is not the same. Therefore, offset level
compensation is required to each color by using each color’s data at dark or the optical black pixels.
The following timing and parameters are for reference only.
SEL1
SEL2
t
R
t
G
t
B
φ
φ
1
2
φ
RB
at dark
VOUT
with light
Red
Green
Blue
Symbol
MIN.
300
TYP.
MAX.
Unit
ns
tR, tG, tB
–
11
µPD3794
DEFINITIONS OF CHARACTERISTIC ITEMS
1. Saturation voltage: Vsat
Output signal voltage at which the response linearity is lost.
2. Saturation exposure: SE
Product of intensity of illumination (IX) and storage time (s) when saturation of output voltage occurs.
3. Photo response non-uniformity: PRNU
The output signal non-uniformity of all the valid pixels when the photosensitive surface is applied with the light
of uniform illumination. This is calculated by the following formula.
∆x
PRNU (%) =
× 100
x
∆x : maximum of xj − x
2700
xj
Σ
j=1
x =
2700
xj : Output voltage of valid pixel number j
VOUT
x
Register Dark
DC level
∆x
4. Average dark signal: ADS
Average output signal voltage of all the valid pixels at light shielding. This is calculated by the following formula.
2700
d
j=1
2700
j
Σ
ADS (mV) =
dj : Dark signal of valid pixel number j
5. Dark signal non-uniformity: DSNU
Absolute maximum of the difference between ADS and voltage of the highest or lowest output pixel of all the valid
pixels at light shielding. This is calculated by the following formula.
DSNU (mV) : maximum of d
j
− ADS j = 1 to 2700
dj
: Dark signal of valid pixel number j
V
OUT
ADS
Register Dark
DC level
DSNU
12
µPD3794
6. Output impedance: ZO
Impedance of the output pins viewed from outside.
7. Response: R
Output voltage divided by exposure (Ix•s).
Note that the response varies with a light source (spectral characteristic).
8. Image Lag: IL
The rate between the last output voltage and the next one after read out the data of a line.
TG
Light
ON
OFF
V
OUT
V
1
V
OUT
V1
IL (%) =
×100
VOUT
9. Random noise: σ
Random noise σ is defined as the standard deviation of a valid pixel output signal with 100 times (=100 lines)
data sampling at dark (light shielding).
100
100
(V
i
– V)2
100
1
Σ
σ (mV) =
, V =
Vi
100 Σ
i=1
i=1
Vi: A valid pixel output signal among all of the valid pixels for each color
V
V
1
2
V
OUT
line 1
line 2
V
100
line 100
This is measured by the DC level sampling of only the signal level, not by CDS (Correlated Double Sampling).
13
µPD3794
STANDARD CHARACTERISTIC CURVES
DARK OUTPUT TEMPERATURE
CHARACTERISTIC
STORAGE TIME OUTPUT VOLTAGE
CHARACTERISTIC (TA = +25 °C)
8
4
2
1
2
1
0.5
0.25
0.2
0.1
0.1
0
10
20
30
40
50
1
5
10
Operating Ambient Temperature TA(°C)
Storage Time (ms)
TOTAL SPECTRAL RESPONSE CHARACTERISTICS
(without infrared cut filter) (T = +25 °C)
A
100
80
R
B
G
60
40
20
G
B
0
400
500
600
700
800
Wavelength (nm)
14
µPD3794
APPLICATION CIRCUIT EXAMPLE
+5 V
+12 V
10 Ω
+
+
µPD3794
10
µ
F/16 V 0.1
µ
F
0.1 µF 47 µF/25 V
47 Ω
47 Ω
1
2
3
22
21
20
19
18
B
VOUT
SEL1
SEL1
GND
NC
47 Ω
SEL2
φ
RB
φ
RB
SEL2
+5 V
4
5
6
7
VOD
NC
NC
NC
NC
NC
NC
17
16
15
14
13
12
+
NC
NC
0.1 µF 10 µF/16 V
8
9
GND
4.7 Ω
10 Ω
4.7 Ω
10 Ω
10 Ω
φ
φ
2
φ1
φ
φ
1
2
φ
10
TG3
φ
TG1
TG2
TG
11
GND
φ
Remark
Inverters: 74HC04
B EQUIVALENT CIRCUIT
12 V
+
µ
47 F/25 V
100 Ω
100 Ω
CCD
2SC945
V
OUT
2 kΩ
15
µPD3794
PACKAGE DRAWING
CCD LINEAR IMAGE SENSOR 22PIN PLASTIC DIP (400 mil)
(Unit : mm)
1st valid pixel
3.95±0.3
3
37.5
44.0±0.3
10.16
(1.99)
1
2.35±0.2
(5.42)
4.21±0.5
4.39±0.4
2.54
1.02±0.15
0.46±0.1
25.4
Name
Dimensions
42.9 x 8.35 x 0.7
Refractive index
2
Plastic cap
1.5
1 The bottom of the package
2 The thickness of the cap over the chip
3 The 1st valid pixel The center of the pin 1.
The surface of the chip
22C-1CCD-PKG10-1
16
µPD3794
RECOMMENDED SOLDERING CONDITIONS
When soldering this product, it is highly recommended to observe the conditions as shown below.
If other soldering processes are used, or if the soldering is performed under different conditions, please make sure
to consult with our sales offices.
For more details, refer to our document "Semiconductor Device Mounting Technology Manual"(C10535E).
Type of Through-hole Device
µPD3794CY: CCD linear image sensor 22-pin plastic DIP (400 mil)
Process
Conditions
Partial heating method
Pin temperature: 260 °C or below,
Heat Time: 10 seconds or less (per pin)
Caution
During assembly care should be taken to prevent solder or flux from contacting the plastic cap.
The optical characteristics could be degraded by such contact.
17
µPD3794
NOTES ON CLEANING THE PLASTIC CAP
1 CLEANING THE PLASTIC CAP
Care should be taken when cleaning the surface to prevent scratches.
The optical characteristics of the CCD will be degraded if the cap is scratched during
cleaning.
We recommend cleaning the cap with a soft cloth moistened with one of the recommended
solvents below. Excessive pressure should not be applied to the cap during cleaning. If the
cap requires multiple cleanings it is recommended that a clean surface or cloth be used.
2 RECOMMENDED SOLVENTS
The following are the recommended solvents for cleaning the CCD plastic cap. Use of
solvents other than these could result in optical or physical degradation in the plastic cap.
Please consult your sales office when considering an alternative solvent.
Solvents
Symbol
Ethyl Alcohol
EtOH
MeOH
IPA
Methyl Alcohol
Isopropyl Alcohol
N-methyl Pyrrolidone
NMP
18
µPD3794
NOTES FOR CMOS DEVICES
1 PRECAUTION AGAINST ESD FOR SEMICONDUCTORS
Note: Strong electric field, when exposed to a MOS device, can cause destruction of
the gate oxide and ultimately degrade the device operation. Steps must be
taken to stop generation of static electricity as much as possible, and quickly
dissipate it once, when it has occurred. Environmental control must be
adequate. When it is dry, humidifier should be used. It is recommended to
avoid using insulators that easily build static electricity. Semiconductor
devices must be stored and transported in an anti-static container, static
shielding bag or conductive material. All test and measurement tools including
work bench and floor should be grounded. The operator should be grounded
using wrist strap. Semiconductor devices must not be touched with bare
hands. Similar precautions need to be taken for PW boards with semiconductor
devices on it.
2 HANDLING OF UNUSED INPUT PINS FOR CMOS
Note: No connection for CMOS device inputs can be cause of malfunction. If no
connection is provided to the input pins, it is possible that an internal input
level may be generated due to noise, etc., hence causing malfunction. CMOS
device behave differently than Bipolar or NMOS devices. Input levels of CMOS
devices must be fixed high or low by using a pull-up or pull-down circuitry. Each
unused pin should be connected to VDD or GND with a resistor, if it is considered
to have a possibility of being an output pin. All handling related to the unused
pins must be judged device by device and related specifications governing the
devices.
3 STATUS BEFORE INITIALIZATION OF MOS DEVICES
Note: Power-on does not necessarily define initial status of MOS device. Production
process of MOS does not define the initial operation status of the device.
Immediately after the power source is turned ON, the devices with reset function
have not yet been initialized. Hence, power-on does not guarantee out-pin
levels, I/O settings or contents of registers. Device is not initialized until the
reset signal is received. Reset operation must be executed immediately after
power-on for devices having reset function.
19
µPD3794
[MEMO]
The application circuits and their parameters are for reference only and are not intended for use in actual design-ins.
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in
this document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property
rights of third parties by or arising from use of a device described herein or any other liability arising from use
of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other
intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a
customer designated "quality assurance program" for a specific application. The recommended applications of
a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device
before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
Anti-radioactive design is not implemented in this product.
M4 96.5
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