MRF9060 [MOTOROLA]
945 MHz, 60 W, 26 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs; 945兆赫, 60 W, 26 V横向N沟道宽带射频功率MOSFET![MRF9060](http://pdffile.icpdf.com/pdf1/p00077/img/icpdf/MRF9060_403540_icpdf.jpg)
型号: | MRF9060 |
厂家: | ![]() |
描述: | 945 MHz, 60 W, 26 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs |
文件: | 总12页 (文件大小:392K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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ꢒ ꢓꢎ ꢓ ꢀꢓ ꢔꢕ
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF9060/D
The RF Sub–Micron MOSFET Line
ꢀ ꢁ ꢂ ꢃꢄꢅ ꢆ ꢁꢇꢅ ꢈꢉ ꢊ ꢋꢋ ꢅ ꢌꢍ ꢎꢆ ꢏꢐ ꢑ ꢇꢑ ꢍꢃ ꢆ ꢑ
ꢒꢀ ꢁ ꢖꢗꢘ ꢗꢀꢙ
N–Channel Enhancement–Mode Lateral MOSFETs
ꢒ
ꢀ
ꢁ
ꢖ
ꢗ
ꢘ
ꢗ
ꢚ
ꢀ
ꢙ
Designed for broadband commercial and industrial applications with frequen-
cies up to 1.0 GHz. The high gain and broadband performance of these devices
make them ideal for large–signal, common–source amplifier applications in 26
volt base station equipment.
• Typical Two–Tone Performance at 945 MHz, 26 Volts
Output Power — 60 Watts PEP
Power Gain — 17 dB
945 MHz, 60 W, 26 V
LATERAL N–CHANNEL
BROADBAND
Efficiency — 40%
IMD — –31 dBc
RF POWER MOSFETs
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 10:1 VSWR, @ 26 Vdc, 945 MHz, 60 Watts CW
Output Power
• Excellent Thermal Stability
• Characterized with Series Equivalent Large–Signal Impedance Parameters
• In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel.
CASE 360B–05, STYLE 1
NI–360
MRF9060R1
CASE 360C–05, STYLE 1
NI–360S
MRF9060SR1
MAXIMUM RATINGS
Rating
Symbol
Value
65
Unit
Vdc
Vdc
Drain–Source Voltage
Gate–Source Voltage
V
DSS
V
GS
–0.5, +15
Total Device Dissipation @ T = 25°C
Derate above 25°C
MRF9060R1
P
D
159
0.91
219
Watts
W/°C
Watts
W/°C
C
MRF9060SR1
1.25
Storage Temperature Range
T
–65 to +200
200
°C
°C
stg
Operating Junction Temperature
T
J
ESD PROTECTION CHARACTERISTICS
Test Conditions
Class
Human Body Model
1 (Minimum)
M1 (Minimum)
Machine Model
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
MRF9060R1
MRF9060SR1
R
1.1
0.8
°C/W
θ
JC
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 4
Motorola, Inc. 2002
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Characteristic
OFF CHARACTERISTICS
Zero Gate Voltage Drain Leakage Current
Symbol
Min
Typ
Max
Unit
I
—
—
—
—
—
—
10
1
µAdc
µAdc
µAdc
DSS
(V = 65 Vdc, V = 0 Vdc)
DS
GS
Zero Gate Voltage Drain Leakage Current
(V = 26 Vdc, V = 0 Vdc)
I
DSS
DS
GS
Gate–Source Leakage Current
(V = 5 Vdc, V = 0 Vdc)
I
1
GSS
GS
DS
ON CHARACTERISTICS
Gate Threshold Voltage
V
V
2
2.9
3.7
4
Vdc
Vdc
Vdc
S
GS(th)
GS(Q)
DS(on)
(V = 10 Vdc, I = 200 µAdc)
DS
D
Gate Quiescent Voltage
(V = 26 Vdc, I = 450 mAdc)
—
—
—
—
0.4
—
DS
D
Drain–Source On–Voltage
(V = 10 Vdc, I = 1.3 Adc)
V
0.17
5.3
GS
D
Forward Transconductance
(V = 10 Vdc, I = 4 Adc)
g
fs
DS
D
DYNAMIC CHARACTERISTICS
Input Capacitance
(V = 26 Vdc 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)
DS
C
—
—
—
98
50
2
—
—
—
pF
pF
iss
GS
Output Capacitance
(V = 26 Vdc 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)
DS
C
oss
GS
Reverse Transfer Capacitance
C
pF
rss
(V = 26 Vdc 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)
DS
GS
(continued)
MRF9060R1 MRF9060SR1
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS — continued (T = 25°C unless otherwise noted)
C
Characteristic
Symbol
Min
Typ
Max
Unit
FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system)
Two–Tone Common–Source Amplifier Power Gain
G
16
17
—
dB
ps
(V = 26 Vdc, P = 60 W PEP, I = 450 mA,
DD
out
DQ
f1 = 945.0 MHz, f2 = 945.1 MHz)
Two–Tone Drain Efficiency
η
36
—
—
—
40
–31
–16
17
—
–28
–9
%
dBc
dB
(V = 26 Vdc, P = 60 W PEP, I = 450 mA,
DD
out
DQ
f1 = 945.0 MHz, f2 = 945.1 MHz)
3rd Order Intermodulation Distortion
IMD
IRL
(V = 26 Vdc, P = 60 W PEP, I = 450 mA,
DD
out
DQ
f1 = 945.0 MHz, f2 = 945.1 MHz)
Input Return Loss
(V = 26 Vdc, P = 60 W PEP, I = 450 mA,
DD
out
DQ
f1 = 945.0 MHz, f2 = 945.1 MHz)
Two–Tone Common–Source Amplifier Power Gain
G
—
dB
ps
(V = 26 Vdc, P = 60 W PEP, I = 450 mA,
DD
out
DQ
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
Two–Tone Drain Efficiency
η
—
—
—
39
—
—
—
%
dBc
dB
(V = 26 Vdc, P = 60 W PEP, I = 450 mA,
DD
out
DQ
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
3rd Order Intermodulation Distortion
IMD
IRL
–31
–16
(V = 26 Vdc, P = 60 W PEP, I = 450 mA,
DD
out
DQ
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
Input Return Loss
(V = 26 Vdc, P = 60 W PEP, I = 450 mA,
DD
out
DQ
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
Power Output, 1 dB Compression Point
P
—
—
—
70
17
51
—
—
—
W
dB
%
1dB
(V = 26 Vdc, P = 60 W CW, I = 450 mA,
DD
out
DQ
f1 = 945.0 MHz)
Common–Source Amplifier Power Gain
G
ps
(V = 26 Vdc, P = 60 W CW, I = 450 mA,
DD
out
DQ
f1 = 945.0 MHz)
Drain Efficiency
η
(V = 26 Vdc, P = 60 W CW, I = 450 mA,
DD
out
DQ
f1 = 945.0 MHz)
Output Mismatch Stress
(V = 26 Vdc, P = 60 W CW, I = 450 mA,
f = 945.0 MHz, VSWR = 10:1, All Phase Angles at Frequency
of Tests)
Ψ
DD
out
DQ
No Degradation In Output Power
MOTOROLA RF DEVICE DATA
MRF9060R1 MRF9060SR1
3
ꢔ ꢊ
ꢔ ꢕ
ꢈꢊ ꢒ
ꢍ
ꢑ ꢑ
ꢍ
ꢎ ꢎ
ꢐ
ꢐ
ꢐ
ꢐ
ꢈ ꢉ
ꢋ ꢊ
ꢈꢏ
ꢈꢊ ꢌ
ꢈꢊ ꢉ
ꢈ ꢊꢏ
ꢖꢊ
ꢖ ꢕ
ꢈꢓ
ꢈꢘ
ꢋꢊꢊ ꢋꢊ ꢕ
ꢀ ꢁ
ꢇ ꢅ ꢆꢄꢅ ꢆ
ꢀ ꢁ
ꢂ ꢃ ꢄꢅ ꢆ
ꢋꢊ ꢗ
ꢋꢊ ꢒ
ꢋꢊ ꢓ
ꢋꢊ ꢌ
ꢈꢊꢊ
ꢋꢊ ꢉ
ꢈꢊ ꢕ
ꢋ
ꢊ
ꢏ
ꢋ
ꢕ
ꢋ
ꢒ
ꢋ
ꢓ
ꢋ
ꢌ
ꢋ
ꢉ
ꢋꢏ
ꢈ ꢒ
ꢋ
ꢙ
ꢋ
ꢘ
ꢈ
ꢊ
ꢓ
ꢎ
ꢅ
ꢆ
ꢈ
ꢊ
ꢈ
ꢙ
ꢈ
ꢊ
ꢗ
ꢈ
ꢕ
ꢈ
ꢌ
Z1
0.240″ x 0.060″ Microstrip
0.240″ x 0.060″ Microstrip
0.500″ x 0.100″ Microstrip
0.180″ x 0.270″ Microstrip
0.350″ x 0.270″ Microstrip
0.270″ x 0.520 x 0.140″ Taper
0.170″ x 0.520″ Microstrip
0.410″ x 0.520″ Microstrip
0.060″ x 0.520″ Microstrip
Z10
0.360″ x 0.270″ Microstrip
0.060″ x 0.270″ Microstrip
0.110″ x 0.060″ Microstrip
0.330″ x 0.060″ Microstrip
0.230″ x 0.060″ Microstrip
0.740″ x 0.060″ Microstrip
0.130″ x 0.060″ Microstrip
0.340″ x 0.060″ Microstrip
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
Z11
Z12
Z13
Z14
Z15
Z16
Z17
Figure 1. 945 MHz Broadband Test Circuit Schematic
Table 1. 945 MHz Broadband Test Circuit Component Designations and Values
Part
Description
Value, P/N or DWG
95F786
Manufacturer
B1
B2
Short Ferrite Bead
Long Ferrite Bead
Newark
Newark
ATC
95F787
C1, C7, C13, C14
C2, C3, C11
C4, C5, C8, C9
C6, C15, C16
C10
47 pF Chip Capacitors, B Case
0.8–8.0 Gigatrim Variable Capacitors
10 pF Chip Capacitors, B Case
10 mF, 35 V Tantalum Chip Capacitor
3.0 pF Chip Capacitor, B Case
100B470JP 500X
44F3360
Newark
ATC
100B100JP 500X
93F2975
Newark
ATC
100B3R0JP 500X
C12
0.5 pF Chip Capacitor, B Case (MRF9060)
0.7 pF Chip Capacitor, B Case (MRF9060S)
100B0R5BP 500X
100B0R7BP 500X
ATC
ATC
C17
220 mF Electrolytic Chip Capacitor
12.5 nH Inductors
14F185
Newark
Coilcraft
Avnet
L1, L2
A04T–5
N1, N2
N–Type Panel Mount, Stripline
3052–1648–10
WB1, WB2
Board Material
PCB
10 mil Brass Wear Blocks
30 mil Glass Teflon , ε = 3.55 Copper Clad, 1 oz Cu
RF–35–0300
Taconic
r
Etched Circuit Board
MRF9060 900 MHz, Rev. 2
MRF9060R1 MRF9060SR1
4
MOTOROLA RF DEVICE DATA
ꢈꢉ
ꢈꢊ ꢏ
ꢍ
ꢎ ꢎ
ꢔ ꢊ
ꢍ
ꢑ ꢑ
ꢔ ꢕ
ꢈꢊ ꢒ
ꢖ ꢕ
ꢈꢏ
ꢖ ꢊ
ꢈꢊ ꢌ ꢈꢊ ꢉ
ꢈꢓ
ꢚ ꢔꢊ
ꢈꢌ
ꢈꢙ
ꢈꢘ
ꢂꢃ ꢄꢅ ꢆ
ꢚ ꢔꢕ
ꢇ ꢅꢆꢄ ꢅꢆ
ꢈꢊ
ꢈꢊ ꢓ
ꢈꢕ
ꢈꢒ
ꢈꢊꢊ
ꢈ
ꢊ
ꢗ
ꢈ
ꢊ
ꢕ
MRF9060
900 MHz
ꢀꢛ ꢜꢝ ꢗ ꢕ
Figure 2. 930 – 960 MHz Broadband Test Circuit Component Layout
MOTOROLA RF DEVICE DATA
MRF9060R1 MRF9060SR1
5
TYPICAL CHARACTERISTICS
ꢌ ꢗ
ꢊꢙ
ꢊꢏ
ꢑ
ꢱ ꢲ
ꢓ ꢌ
h
ꢓ ꢗ
ꢊꢉ
ꢊꢌ
ꢊꢓ
ꢊꢒ
ꢊꢕ
ꢍ
ꢄ
ꢂ
ꢴ ꢕ ꢉ ꢍ ꢥꢦ
ꢴ ꢉ ꢗ ꢚ ꢤꢄ ꢟ ꢄ ꢧ
ꢴ ꢓ ꢌꢗ ꢵꢡ
ꢎ ꢎ
ꢒ ꢌ
ꢩ ꢪ ꢫ
ꢝ ꢒ ꢗ
ꢝ ꢒ ꢕ
ꢝ ꢒ ꢓ
ꢝ ꢊ ꢗ
ꢝ ꢊ ꢕ
ꢝ ꢊ ꢓ
ꢎ ꢭ
ꢂ ꢠꢎ
ꢂ ꢀꢖ
ꢆꢸꢩ ꢝ ꢆꢩ ꢹꢛ ꢠꢛ ꢺ ꢲꢪꢶ ꢛ ꢵꢛ ꢹꢫ ꢨ
ꢊ ꢗꢗ ꢻꢯꢰ ꢆꢩ ꢹꢛ ꢣ ꢱꢺ ꢦꢼꢹ ꢽ
ꢝ ꢒ ꢉ
ꢝ ꢒ ꢙ
ꢝ ꢊ ꢉ
ꢝ ꢊ ꢙ
ꢊꢊ
ꢊꢗ
ꢘꢒ ꢗ
ꢘꢒ ꢌ
ꢘ ꢓꢗ
ꢘ ꢓꢌ
ꢘ
ꢌ
ꢗ
ꢘ
ꢌ
ꢌ
ꢘ ꢉꢗ
ꢬ
ꢨ
ꢁ
ꢀ
ꢟ
ꢭ
ꢅ
ꢟ
ꢃ
ꢈ
ꢮ
ꢤ
ꢠ
ꢯ
ꢰ
ꢧ
Figure 3. Class AB Broadband Circuit Performance
ꢊ ꢙ
ꢊ ꢏꢞ ꢌ
ꢊ ꢏ
ꢝ ꢕ ꢗ
ꢝ ꢕ ꢌ
ꢝ ꢒ ꢗ
ꢂ
ꢴ ꢉ ꢌꢗ ꢵꢡ
ꢌ ꢗꢗ ꢢꢵ ꢡ
ꢎ
ꢭ
ꢂ
ꢴ
ꢕ
ꢏ
ꢌ
ꢵ
ꢡ
ꢎ
ꢭ
ꢝ ꢒ ꢌ
ꢝ ꢓ ꢗ
ꢝ ꢓ ꢌ
ꢝ ꢌ ꢗ
ꢝ ꢌ ꢌ
ꢝ ꢉ ꢗ
ꢓ
ꢌ
ꢗ
ꢢ
ꢵ
ꢡ
ꢊ ꢉꢞ ꢌ
ꢊ ꢉ
ꢌ
ꢗ
ꢗ
ꢵ
ꢡ
ꢓ
ꢌ
ꢗ
ꢵ
ꢡ
ꢕ
ꢏ
ꢌ
ꢢ
ꢵ
ꢡ
ꢉ ꢌꢗ ꢵꢡ
ꢍ
ꢴ ꢕꢉ ꢍ ꢥꢦ
ꢬ ꢊ ꢴ ꢘꢓ ꢌ ꢠꢯ ꢰ
ꢍ
ꢴ ꢕ ꢉ ꢍꢥ ꢦ
ꢬ ꢊ ꢴ ꢘ ꢓꢌ ꢠꢯ ꢰ
ꢎ ꢎ
ꢎ
ꢎ
ꢊ ꢌꢞ ꢌ
ꢊ ꢌ
ꢬ
ꢕ
ꢴ
ꢘ
ꢓ
ꢌ
ꢞ
ꢊ
ꢠ
ꢯ
ꢰ
ꢬ
ꢕ
ꢴ
ꢘ
ꢓ
ꢌ
ꢞ
ꢊ
ꢠ
ꢯ
ꢰ
ꢊ
ꢊ
ꢗ
ꢊ
ꢗ
ꢗ
ꢊ
ꢊ ꢗ
ꢨ ꢇ ꢅꢆꢄ ꢅꢆ ꢄ ꢇ ꢚꢟ ꢀ ꢤꢚꢡꢆꢆꢣ ꢧ ꢄ ꢟ ꢄ
ꢊ
ꢗ
ꢗ
ꢄ ꢨ ꢇ ꢅꢆ ꢄꢅ ꢆ ꢄ ꢇꢚꢟ ꢀ ꢤ ꢚꢡꢆꢆ ꢣꢧ ꢄ ꢟꢄ
ꢩ ꢪꢫ
ꢄ
ꢩ ꢪ ꢫ
Figure 4. Power Gain versus Output Power
Figure 5. Intermodulation Distortion versus
Output Power
ꢗ
ꢉ
ꢗ
ꢕ ꢗ
ꢊ ꢙ
ꢍ
ꢴ ꢕ ꢉ ꢍꢥ ꢦ
ꢴ ꢓ ꢌꢗ ꢵꢡ
ꢎ
ꢎ
ꢑ
ꢱ
ꢲ
ꢝ
ꢊ
ꢗ
ꢂ
ꢎ ꢭ
ꢬꢊ ꢴ ꢘ ꢓꢌ ꢠꢯ ꢰ
ꢌ ꢗ
ꢓ ꢗ
ꢝ ꢕꢗ
ꢝ ꢒꢗ
ꢝ ꢓꢗ
ꢝ ꢌꢗ
ꢝ ꢉꢗ
ꢝ ꢏꢗ
ꢬ
ꢕ
ꢴ
ꢘ
ꢓ
ꢌ
ꢞ
ꢊ
ꢠ
ꢯ
ꢰ
ꢊ ꢉ
ꢊ ꢓ
h
ꢒ ꢗ
ꢕ ꢗ
ꢒ
ꢶ
ꢥ
ꢢ
ꢇ
ꢶ
ꢥ
ꢛ
ꢶ
ꢊ ꢕ
ꢊ ꢗ
ꢍ
ꢴ ꢕ ꢉ ꢍ ꢥꢦ
ꢎ ꢎ
ꢌ
ꢫ
ꢷ
ꢢ
ꢇ
ꢶ
ꢥ
ꢛ
ꢶ
ꢊ ꢗ
ꢗ
ꢂ
ꢴ ꢓ ꢌꢗ ꢵꢡ
ꢬ ꢴ ꢘ ꢓꢌ ꢠꢯ ꢰ
ꢎ
ꢭ
ꢏ
ꢫ
ꢷ
ꢢ
ꢇ
ꢶ
ꢥ
ꢛ
ꢶ
ꢙ
ꢊ ꢗ
ꢨ ꢇ ꢅꢆꢄ ꢅꢆ ꢄ ꢇ ꢚꢟ ꢀ ꢤꢚꢡꢆꢆꢣ ꢧ ꢡꢍ ꢑ ꢞ
ꢊ
ꢗ
ꢗ
ꢗ
ꢞ
ꢊ
ꢊ
ꢊ
ꢗ
ꢊ
ꢗ
ꢗ
ꢄ
ꢩꢪ ꢫ
ꢨ
ꢇ
ꢅ
ꢆ
ꢄ
ꢅ
ꢆ
ꢄ
ꢇ
ꢚ
ꢟ
ꢀ
ꢤ
ꢚ
ꢡ
ꢆ
ꢆ
ꢣ
ꢧ
ꢄ
ꢟ
ꢄ
ꢄ
ꢩ ꢪ ꢫ
Figure 6. Intermodulation Distortion Products
versus Output Power
Figure 7. Power Gain and Efficiency versus
Output Power
MRF9060R1 MRF9060SR1
6
MOTOROLA RF DEVICE DATA
ꢉ ꢗ
ꢊꢙ
ꢊꢉ
ꢑ
ꢱ ꢲ
ꢓ ꢗ
ꢕ ꢗ
ꢊꢓ
ꢊꢕ
ꢍ
ꢴ ꢕ ꢉ ꢍ ꢥꢦ
ꢴ ꢓ ꢌꢗ ꢵꢡ
ꢎ ꢎ
h
ꢂ
ꢎ ꢭ
ꢬ ꢊ ꢴ ꢘ ꢓꢌ ꢠꢯ ꢰ
ꢗ
ꢬ ꢕ ꢴ ꢘ ꢓꢌ ꢞ ꢊ ꢠꢯ ꢰ
ꢝ ꢕ ꢗ
ꢊꢗ
ꢙ
ꢝ ꢓ ꢗ
ꢝ ꢉ ꢗ
ꢂ ꢠꢎ
ꢉ
ꢊ
ꢊ ꢗ
ꢨ ꢇ ꢅꢆꢄ ꢅꢆ ꢄ ꢇ ꢚꢟ ꢀ ꢤꢚꢡꢆꢆꢣ ꢧ ꢄ ꢟ ꢄ
ꢊ ꢗꢗ
ꢄ
ꢩ ꢪ ꢫ
Figure 8. Power Gain, Efficiency, and IMD
versus Output Power
MOTOROLA RF DEVICE DATA
MRF9060R1 MRF9060SR1
7
ꢋ ꢴ ꢌ Ω
ꢩ
ꢋ
ꢼ ꢹ
ꢬ ꢴ ꢘꢉ ꢗ ꢠ ꢯꢰ
ꢬ ꢴ ꢘꢒ ꢗ ꢠ ꢯꢰ
ꢋ
ꢾ
ꢇ ꢖ
ꢬ ꢴ ꢘ ꢉꢗ ꢠꢯ ꢰ
ꢬ ꢴ ꢘ ꢒꢗ ꢠꢯ ꢰ
ꢍ
ꢎ ꢎ
ꢴ ꢕꢉ ꢍꢨ ꢂ ꢴ ꢓ ꢌꢗ ꢵꢡ ꢨ ꢄ ꢴ ꢉ ꢗ ꢚ ꢄ ꢟ ꢄ
ꢎ ꢭ ꢩ ꢪ ꢫ
f
Z
in
Z
OL
*
MHz
Ω
Ω
930
945
960
0.80 + j0.10
0.80 + j0.05
0.81 + j0.10
2.08 – j0.65
2.07 – j0.38
2.04 – j0.37
Z
Z
= Complex conjugate of source impedance.
in
* = Complex conjugate of the optimum load
impedance at a given output power, voltage,
IMD, bias current and frequency.
OL
ꢃꢩ ꢫ ꢛꢿ
ꢋ ꢾ ꢸꢺ ꢲ ꢦꢷꢩ ꢲꢛꢹ ꣀꢺ ꢲꢛ ꢥ ꢩ ꢹ ꢫ ꢶꢺ ꢥ ꢛꢩ ꢬꢬ ꢲ ꣀ ꢛꢫ ꢸꢛ ꢛ ꢹ ꢽ ꢺꢼ ꢹꢨ ꢩ ꢪꢫ ꢱ ꢪꢫ
ꢇ ꢖ
ꢱꢩ ꢸꢛꢶꢨ ꢥꢶ ꢺ ꢼꢹ ꢛꢬꢬ ꢼꢦꢼ ꢛꢹꢦꣁ ꢺ ꢹꢥ ꢼꢹ ꢫ ꢛꢶ ꢵꢩ ꢥ ꢪꣂ ꢺꢫ ꢼ ꢩꢹ ꢥ ꢼꢲꢫ ꢩ ꢶꢫ ꢼꢩ ꢹ ꢞ
ꢇ ꢪ ꢫꢱ ꢪ ꢫ
ꢎꢛ ꢜꢼꢦꢛ
ꢂ ꢹꢱꢪ ꢫ
ꢠ ꢺꢫ ꢦꢷꢼ ꢹꢽ
ꢃꢛ ꢫ ꢸꢩꢶ ꢻ
ꢠꢺ ꢫ ꢦꢷ ꢼꢹ ꢽ
ꢃꢛ ꢫ ꢸꢩ ꢶꢻ
ꢅꢹ ꢥ ꢛꢶ ꢆꢛ ꢲꢫ
Z
Z
*
in
OL
Figure 9. Series Equivalent Input and Output Impedance
MRF9060R1 MRF9060SR1
MOTOROLA RF DEVICE DATA
8
NOTES
MOTOROLA RF DEVICE DATA
MRF9060R1 MRF9060SR1
9
NOTES
MRF9060R1 MRF9060SR1
10
MOTOROLA RF DEVICE DATA
PACKAGE DIMENSIONS
2X
Q
ꢠ
ꢠ
ꢠ
ꢔ
ꢃ ꢇ ꢆꢟ ꢣ ꢿ
ꢊꢞ ꢂ ꢃ ꢆꢟ ꢀ ꢄꢀ ꢟ ꢆ ꢎ ꢂ ꢠꢟꢃ ꢣ ꢂ ꢇꢃ ꢣ ꢡ ꢃꢎ ꢆꢇ ꢖꢟ ꢀ ꢡꢃ ꢈ ꢟꢣ
ꢄ ꢟꢀ ꢡ ꢣꢠꢟ ꢮ ꢊꢓꢞ ꢌꢠꢝꢊ ꢘꢘꢓꢞ
G
1
ꢺꢺ ꢺ
ꢆ ꢡ
B
ꢕꢞ ꢈ ꢇ ꢃ ꢆꢀ ꢇ ꢖꢖ ꢂꢃ ꢑ ꢎ ꢂ ꢠꢟꢃ ꢣ ꢂꢇ ꢃ ꢿ ꢂ ꢃ ꢈꢯ ꢞ
ꢒꢞ ꢎ ꢂ ꢠꢟꢃ ꢣ ꢂꢇ ꢃ ꢯ ꢂ ꢣ ꢠꢟ ꢡꢣ ꢅ ꢀ ꢟꢎ ꢗꢞ ꢗꢒꢗ ꢤꢗ ꢞꢏꢉ ꢕꢧ ꢡ ꢚ ꢡꢮ
ꢁ ꢀ ꢇꢠ ꢄꢡ ꢈ ꣃꢡ ꢑ ꢟ ꢔ ꢇꢎ ꢮꢞ
3
INCHES
DIM MIN MAX
MILLIMETERS
B
MIN
ꢕꢗꢞ ꢊꢘ
ꢌꢞ ꢏꢕ
ꢒꢞ ꢊꢙ
ꢌꢞ ꢒꢒ
ꢊꢞ ꢓꢗ
ꢗꢞ ꢊꢗ
MAX
ꢕꢗꢞ ꢓ ꢌ
ꢌꢞ ꢘ ꢏ
ꢓꢞ ꢓ ꢌ
ꢌꢞ ꢌ ꢘ
ꢊꢞ ꢉ ꢌ
ꢗꢞ ꢊ ꢌ
2
(FLANGE)
A
B
ꢗꢞ ꢏꢘꢌ
ꢗꢞ ꢕꢕꢌ
ꢗꢞ ꢊꢕꢌ
ꢗꢞ ꢕꢊꢗ
ꢗꢞ ꢗꢌꢌ
ꢗꢞ ꢗꢗꢓ
ꢗꢞ ꢙꢗꢌ
ꢗꢞ ꢕꢒꢌ
ꢗꢞ ꢊꢏꢌ
ꢗꢞ ꢕꢕꢗ
ꢗꢞ ꢗꢉꢌ
ꢗꢞ ꢗꢗꢉ
2X K
2X D
ꣀ ꣀ ꣀ
C
ꢠ
ꢠ
ꢠ
ꢆ ꢡ
ꢔ
R
D
(LID)
E
F
ꢠ
ꢠ
ꢠ
ꢔ
ꢦꢦꢦ
ꢆ ꢡ
G
ꢗꢞ ꢌꢉꢕ ꢢꢔ ꢣꢈ
ꢊꢓꢞ ꢕꢙ ꢢꢔ ꢣꢈ
H
ꢗꢞ ꢗꢏꢏ
ꢗꢞ ꢕꢕꢗ
ꢗꢞ ꢒꢌꢌ
ꢗꢞ ꢒꢌꢏ
ꢗꢞ ꢊꢕꢌ
ꢗꢞ ꢕꢕꢏ
ꢗꢞ ꢕꢕꢌ
ꢗꢞ ꢗꢙꢏ
ꢗꢞ ꢕꢌꢗ
ꢗꢞ ꢒꢉꢌ
ꢗꢞ ꢒꢉꢒ
ꢗꢞ ꢊꢒꢌ
ꢗꢞ ꢕꢒꢒ
ꢗꢞ ꢕꢒꢌ
ꢊꢞ ꢘꢉ
ꢌꢞ ꢌꢘ
ꢘꢞ ꢗꢕ
ꢘꢞ ꢗꢏ
ꢒꢞ ꢊꢙ
ꢌꢞ ꢏꢏ
ꢌꢞ ꢏꢕ
ꢕꢞ ꢕ ꢊ
ꢉꢞ ꢒ ꢌ
ꢘꢞ ꢕ ꢏ
ꢘꢞ ꢕ ꢕ
ꢒꢞ ꢓ ꢒ
ꢌꢞ ꢘ ꢕ
ꢌꢞ ꢘ ꢏ
F
K
H
ꢠ
ꢠ
ꢠ
ꢔ
M
ꢦ
ꢦ
ꢦ
ꢆ
ꢡ
N
N
(LID)
Q
C
E
R
S
aaa
bbb
ccc
ꢗꢞ ꢗꢗꢌ ꢢꢀ ꢟ ꢁ
ꢗꢞ ꢗꢊꢗ ꢢꢀ ꢟ ꢁ
ꢗꢞ ꢗꢊꢌ ꢢꢀ ꢟ ꢁ
ꢗꢞ ꢊꢒꢢ ꢀ ꢟꢁ
ꢗꢞ ꢕꢌꢢ ꢀ ꢟꢁ
ꢗꢞ ꢒꢙꢢ ꢀ ꢟꢁ
S
(INSULATOR)
ꢠ
ꢠ
ꢠ
ꢔ
ꢺ
ꢺ
ꢺ
ꢆ
ꢡ
SEATING
PLANE
T
ꢣ
ꢆ
ꢮ
ꢖ
ꢟ
ꢊ
ꢿ
ꢄ ꢂꢃ ꢊꢞ ꢎ ꢀ ꢡꢂ ꢃ
ꢕꢞ ꢑ ꢡꢆ ꢟ
ꢒꢞ ꢣ ꢇꢅ ꢀ ꢈ ꢟ
ꢠ
ꢠ
ꢠ
ꢔ
ꣀ
ꣀ
ꣀ
ꢆ ꢡ
M
(INSULATOR)
CASE 360B–05
ISSUE F
A
A
NI–360
MRF9060R1
A
A
(FLANGE)
B
B
1
2
ꢃ ꢇ ꢆꢟ ꢣ ꢿ
ꢊꢞ ꢂ ꢃ ꢆꢟ ꢀ ꢄꢀ ꢟ ꢆ ꢎ ꢂ ꢠꢟꢃ ꢣ ꢂ ꢇꢃ ꢣ ꢡ ꢃꢎ ꢆꢇ ꢖꢟ ꢀ ꢡꢃ ꢈ ꢟꢣ
ꢄ ꢟꢀ ꢡ ꢣꢠꢟ ꢮ ꢊꢓꢞ ꢌꢠꢝꢊ ꢘꢘꢓꢞ
ꢕꢞ ꢈ ꢇ ꢃ ꢆꢀ ꢇ ꢖꢖ ꢂꢃ ꢑ ꢎ ꢂ ꢠꢟꢃ ꢣ ꢂꢇ ꢃ ꢿ ꢂ ꢃ ꢈꢯ ꢞ
ꢒꢞ ꢎ ꢂ ꢠꢟꢃ ꢣ ꢂꢇ ꢃ ꢯ ꢂ ꢣ ꢠꢟ ꢡꢣ ꢅ ꢀ ꢟꢎ ꢗꢞ ꢗꢒꢗ ꢤꢗ ꢞꢏꢉ ꢕꢧ ꢡ ꢚ ꢡꢮ
ꢁ ꢀ ꢇꢠ ꢄꢡ ꢈ ꣃꢡ ꢑ ꢟ ꢔ ꢇꢎ ꢮꢞ
2X K
(FLANGE)
2X D
ꢠ
ꢠ
ꢠ
ꣀ
ꣀ
ꣀ
ꢆ
ꢡ
ꢔ
INCHES
DIM MIN MAX
MILLIMETERS
R
MIN
ꢘꢞ ꢌꢒ
ꢌꢞ ꢏꢕ
ꢕꢞ ꢉꢏ
ꢌꢞ ꢒꢒ
ꢗꢞ ꢙꢘ
ꢗꢞ ꢊꢗ
ꢊꢞ ꢓꢌ
ꢕꢞ ꢊꢉ
ꢘꢞ ꢗꢕ
ꢘꢞ ꢗꢏ
ꢌꢞ ꢏꢏ
ꢌꢞ ꢏꢕ
MAX
ꢘꢞ ꢏꢙ
ꢌꢞ ꢘꢏ
ꢒꢞ ꢘꢓ
ꢌꢞ ꢌꢘ
ꢊꢞ ꢊꢓ
ꢗꢞ ꢊꢌ
ꢊꢞ ꢏꢗ
ꢕꢞ ꢘꢕ
ꢘꢞ ꢕꢏ
ꢘꢞ ꢕꢕ
ꢌꢞ ꢘꢕ
ꢌꢞ ꢘꢏ
(LID)
A
B
ꢗꢞ ꢒꢏꢌ
ꢗꢞ ꢕꢕꢌ
ꢗꢞ ꢊꢗꢌ
ꢗꢞ ꢕꢊꢗ
ꢗꢞ ꢗꢒꢌ
ꢗꢞ ꢗꢗꢓ
ꢗꢞ ꢗꢌꢏ
ꢗꢞ ꢗꢙꢌ
ꢗꢞ ꢒꢌꢌ
ꢗꢞ ꢒꢌꢏ
ꢗꢞ ꢕꢕꢏ
ꢗꢞ ꢕꢕꢌ
ꢗꢞ ꢒꢙꢌ
ꢗꢞ ꢕꢒꢌ
ꢗꢞ ꢊꢌꢌ
ꢗꢞ ꢕꢕꢗ
ꢗꢞ ꢗꢓꢌ
ꢗꢞ ꢗꢗꢉ
ꢗꢞ ꢗꢉꢏ
ꢗꢞ ꢊꢊꢌ
ꢗꢞ ꢒꢉꢌ
ꢗꢞ ꢒꢉꢒ
ꢗꢞ ꢕꢒ
ꢠ
ꢠ
ꢠ
ꢦ
ꢦ
ꢦ
ꢆ
ꢡ
ꢔ
C
N
F
(LID)
D
H
E
ꢠ
ꢠ
ꢠ
ꢔ
ꢦ
ꢦ
ꢦ
ꢆ
ꢡ
F
H
K
E
M
N
C
S
R
(INSULATOR)
S
ꢗ
ꢞ
ꢕ
ꢒ
ꢌ
aaa
bbb
ccc
ꢗꢞ ꢗꢗꢌ ꢢꢀ ꢟ ꢁ
ꢗꢞ ꢗꢊꢗ ꢢꢀ ꢟ ꢁ
ꢗꢞ ꢗꢊꢌ ꢢꢀ ꢟ ꢁ
ꢗꢞ ꢊꢒꢢ ꢀ ꢟꢁ
ꢗꢞ ꢕꢌꢢ ꢀ ꢟꢁ
ꢗꢞ ꢒꢙꢢ ꢀ ꢟꢁ
ꢠ
ꢠ
ꢠ
ꢔ
ꢺ
ꢺ
ꢺ
ꢆ
ꢡ
SEATING
PLANE
PIN 3
T
M
(INSULATOR)
ꢣ
ꢆ
ꢮ
ꢖ
ꢟ
ꢊ
ꢿ
ꢠ
ꢠ
ꢠ
ꣀ
ꣀ
ꣀ
ꢆ ꢡ
ꢔ
ꢄ ꢂꢃ ꢊꢞ ꢎ ꢀ ꢡꢂ ꢃ
ꢕꢞ ꢑ ꢡꢆ ꢟ
ꢒꢞ ꢣ ꢇꢅ ꢀ ꢈ ꢟ
CASE 360C–05
ISSUE D
NI–360S
MRF9060SR1
MOTOROLA RF DEVICE DATA
MRF9060R1 MRF9060SR1
11
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola
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MOTOROLA and the
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E Motorola, Inc. 2002.
How to reach us:
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HOME PAGE: http://www.motorola.com/semiconductors/
MRF9060/D
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