MRF9060LSR1_08 [FREESCALE]
RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET; 射频功率场效应晶体管N沟道增强模式横向MOSFET![MRF9060LSR1_08](http://pdffile.icpdf.com/pdf1/p00180/img/icpdf/MRF90_1014498_icpdf.jpg)
型号: | MRF9060LSR1_08 |
厂家: | ![]() |
描述: | RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
文件: | 总12页 (文件大小:411K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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Document Number: MRF9060-1
Rev. 10, 9/2008
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistor
N-Channel Enhancement-Mode Lateral MOSFET
Designed for broadband commercial and industrial applications with frequen-
cies up to 1000 MHz. The high gain and broadband performance of this device
make it ideal for large-signal, common-source amplifier applications in 26 volt
base station equipment.
MRF9060LSR1
• Typical Two-Tone Performance at 945 MHz, 26 Volts
Output Power — 60 Watts PEP
Power Gain — 17 dB
Efficiency — 40%
945 MHz, 60 W, 26 V
LATERAL N-CHANNEL
BROADBAND
IMD — -31 dBc
• Capable of Handling 10:1 VSWR, @ 26 Vdc, 945 MHz, 60 Watts CW
Output Power
Features
RF POWER MOSFET
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Excellent Thermal Stability
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Low Gold Plating Thickness on Leads. L Suffix Indicates 40μ″ Nominal.
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel.
CASE 360C-05, STYLE 1
NI-360S
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Vdc
Vdc
Drain-Source Voltage
Gate-Source Voltage
V
DSS
- 0.5, +65
- 0.5, +15
V
GS
Total Device Dissipation @ T = 25°C
Derate above 25°C
P
D
219
1.25
W
W/°C
C
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
T
- 65 to +150
150
°C
°C
°C
stg
T
C
T
200
J
Table 2. Thermal Characteristics
(1)
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
R
0.8
°C/W
θ
JC
Table 3. ESD Protection Characteristics
Test Conditions
Class
Human Body Model
1 (Minimum)
M1 (Minimum)
Machine Model
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
© Freescale Semiconductor, Inc., 2008. All rights reserved.
Table 4. Electrical Characteristics (T = 25°C unless otherwise noted)
C
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V = 65 Vdc, V = 0 Vdc)
I
I
—
—
—
—
—
—
10
1
μAdc
μAdc
μAdc
DSS
DSS
GSS
DS
GS
Zero Gate Voltage Drain Leakage Current
(V = 26 Vdc, V = 0 Vdc)
DS
GS
Gate-Source Leakage Current
I
1
(V = 5 Vdc, V = 0 Vdc)
GS
DS
On Characteristics
Gate Threshold Voltage
(V = 10 Vdc, I = 200 μAdc)
V
V
2
2.9
3.7
4
Vdc
Vdc
Vdc
S
GS(th)
GS(Q)
DS(on)
DS
D
Gate Quiescent Voltage
(V = 26 Vdc, I = 450 mAdc)
—
—
—
—
0.4
—
DS
D
Drain-Source On-Voltage
(V = 10 Vdc, I = 1.3 Adc)
V
0.17
5.3
GS
D
Forward Transconductance
(V = 10 Vdc, I = 4 Adc)
g
fs
DS
D
Dynamic Characteristics
Input Capacitance
(V = 26 Vdc 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)
DS
C
—
—
—
98
50
2
—
—
—
pF
pF
iss
GS
Output Capacitance
(V = 26 Vdc 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)
DS
C
oss
GS
Reverse Transfer Capacitance
C
pF
rss
(V = 26 Vdc 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)
DS
GS
(continued)
MRF9060LSR1
RF Device Data
Freescale Semiconductor
2
Table 4. Electrical Characteristics (T = 25°C unless otherwise noted) (continued)
C
Characteristic
Symbol
Min
Typ
Max
Unit
Functional Tests (In Freescale Test Fixture, 50 ohm system)
Two-Tone Common-Source Amplifier Power Gain
G
16
17
—
dB
ps
(V = 26 Vdc, P = 60 W PEP, I = 450 mA,
DD
out
DQ
f1 = 945.0 MHz, f2 = 945.1 MHz)
Two-Tone Drain Efficiency
η
36
—
—
—
40
-31
-16
17
—
-28
-9
%
dBc
dB
(V = 26 Vdc, P = 60 W PEP, I = 450 mA,
DD
out
DQ
f1 = 945.0 MHz, f2 = 945.1 MHz)
3rd Order Intermodulation Distortion
IMD
IRL
(V = 26 Vdc, P = 60 W PEP, I = 450 mA,
DD
out
DQ
f1 = 945.0 MHz, f2 = 945.1 MHz)
Input Return Loss
(V = 26 Vdc, P = 60 W PEP, I = 450 mA,
DD
out
DQ
f1 = 945.0 MHz, f2 = 945.1 MHz)
Two-Tone Common-Source Amplifier Power Gain
G
—
dB
ps
(V = 26 Vdc, P = 60 W PEP, I = 450 mA,
DD
out
DQ
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
Two-Tone Drain Efficiency
η
—
—
—
39
—
—
—
%
dBc
dB
(V = 26 Vdc, P = 60 W PEP, I = 450 mA,
DD
out
DQ
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
3rd Order Intermodulation Distortion
IMD
IRL
-31
-16
(V = 26 Vdc, P = 60 W PEP, I = 450 mA,
DD
out
DQ
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
Input Return Loss
(V = 26 Vdc, P = 60 W PEP, I = 450 mA,
DD
out
DQ
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
Power Output, 1 dB Compression Point
P
—
—
—
70
17
51
—
—
—
W
dB
%
1dB
(V = 26 Vdc, P = 60 W CW, I = 450 mA,
DD
out
DQ
f1 = 945.0 MHz)
Common-Source Amplifier Power Gain
G
ps
(V = 26 Vdc, P = 60 W CW, I = 450 mA,
DD
out
DQ
f1 = 945.0 MHz)
Drain Efficiency
η
(V = 26 Vdc, P = 60 W CW, I = 450 mA,
DD
out
DQ
f1 = 945.0 MHz)
MRF9060LSR1
RF Device Data
Freescale Semiconductor
3
B1
B2
C13
V
GG
V
DD
+
+
+
+
C6
Z1
C7
C15
C16
C17
L1
L2
C4
C9
Z11 Z12
RF
OUTPUT
RF
INPUT
Z10
Z13
Z14
Z15
C11
Z16
C12
Z17
Z2 Z3
Z4
Z5 Z6
Z7
C3
Z8
Z9
C14
DUT
C1
C8
C10
C2
C5
Z1
0.240″ x 0.060″ Microstrip
0.240″ x 0.060″ Microstrip
0.500″ x 0.100″ Microstrip
0.180″ x 0.270″ Microstrip
0.350″ x 0.270″ Microstrip
0.270″ x 0.520 x 0.140″ Taper
0.170″ x 0.520″ Microstrip
0.410″ x 0.520″ Microstrip
0.060″ x 0.520″ Microstrip
Z10
0.360″ x 0.270″ Microstrip
0.060″ x 0.270″ Microstrip
0.110″ x 0.060″ Microstrip
0.330″ x 0.060″ Microstrip
0.230″ x 0.060″ Microstrip
0.740″ x 0.060″ Microstrip
0.130″ x 0.060″ Microstrip
0.340″ x 0.060″ Microstrip
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
Z11
Z12
Z13
Z14
Z15
Z16
Z17
PCB
Taconic RF-35-0300, 30 mil, ε = 3.55
r
Figure 1. 945 MHz Broadband Test Circuit Schematic
Table 5. 945 MHz Broadband Test Circuit Component Designations and Values
Part
Description
Part Number
2743019447
Manufacturer
B1
B2
Short Ferrite Bead
Long Ferrite Bead
Fair-Rite
Fair-Rite
ATC
2743029446
C1, C7, C13, C14
C2, C3, C11
C4, C5, C8, C9
C6, C15, C16
C10
47 pF Chip Capacitors
ATC100B470JT500XT
27291SL
0.8-8.0 Gigatrim Variable Capacitors
10 pF Chip Capacitors
Johanson
ATC
ATC100B100JT500XT
T491D106K035AT
ATC100B3R0JT500XT
10 mF, 35 V Tantalum Chip Capacitor
3.0 pF Chip Capacitor
Kemet
ATC
C12
0.5 pF Chip Capacitor (MRF9060)
0.7 pF Chip Capacitor (MRF9060S)
ATC100B0R5BT500XT
ATC100B0R7BT500XT
ATC
ATC
C17
220 mF Electrolytic Chip Capacitor
MCAX63V227M13X22
A04T-5
Multicomp
Coilcraft
L1, L2
12.5 nH Inductors
MRF9060LSR1
RF Device Data
Freescale Semiconductor
4
C6
C17
V
DD
B1
V
GG
B2
C13
L2
C7
L1
C15 C16
C4
WB1
C5
C8
C9
INPUT
WB2
OUTPUT
C1
C14
C2
C3
C11
C10
C12
MRF9060
900 MHz
Rev−02
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
Figure 2. 930 - 960 MHz Broadband Test Circuit Component Layout
MRF9060LSR1
RF Device Data
Freescale Semiconductor
5
TYPICAL CHARACTERISTICS
50
18
17
G
ps
45
h
40
16
15
14
13
12
V
P
I
= 26 Vdc
= 60 W (PEP)
= 450 mA
DD
35
out
−30
−32
−34
−10
−12
−14
DQ
IMD
IRL
Two−Tone Measurement,
100 kHz Tone Spacing
−36
−38
−16
−18
11
10
930
935
940
945
950
955
960
f, FREQUENCY (MHz)
Figure 3. Class AB Broadband Circuit Performance
18
17.5
17
−20
−25
−30
I
= 650 mA
500 mA
DQ
I
= 275 mA
DQ
−35
−40
−45
−50
−55
−60
450 mA
16.5
16
500 mA
450 mA
275 mA
650 mA
V
= 26 Vdc
f1 = 945 MHz
V
= 26 Vdc
f1 = 945 MHz
DD
DD
15.5
15
f2 = 945.1 MHz
f2 = 945.1 MHz
1
10
100
1
10
, OUTPUT POWER (WATTS) PEP
100
P , OUTPUT POWER (WATTS) PEP
out
P
out
Figure 4. Power Gain versus Output Power
Figure 5. Intermodulation Distortion versus
Output Power
0
60
20
18
V
I
= 26 Vdc
= 450 mA
DD
G
ps
−10
DQ
50
40
f1 = 945 MHz
f2 = 945.1 MHz
−20
−30
−40
−50
−60
−70
16
14
h
30
20
3rd Order
12
10
V
I
= 26 Vdc
= 450 mA
DD
5th Order
10
0
DQ
7th Order
f = 945 MHz
8
10
, OUTPUT POWER (WATTS) AVG.
100
0.1
1
10
100
P , OUTPUT POWER (WATTS) PEP
out
P
out
Figure 6. Intermodulation Distortion Products
versus Output Power
Figure 7. Power Gain and Efficiency versus
Output Power
MRF9060LSR1
RF Device Data
Freescale Semiconductor
6
TYPICAL CHARACTERISTICS
60
18
16
G
ps
40
20
14
12
V
= 26 Vdc
= 450 mA
DD
h
I
DQ
f1 = 945 MHz
0
f2 = 945.1 MHz
−20
10
8
−40
−60
IMD
6
1
10
, OUTPUT POWER (WATTS) PEP
100
P
out
Figure 8. Power Gain, Efficiency, and IMD
versus Output Power
MRF9060LSR1
RF Device Data
Freescale Semiconductor
7
Z = 5 Ω
o
Z
load
Z
source
f = 960 MHz
f = 930 MHz
f = 960 MHz
f = 930 MHz
V
DD
= 26 V, I = 450 mA, P = 60 W PEP
DQ out
f
Z
Z
load
source
MHz
Ω
Ω
930
945
960
0.80 - j0.10
0.80 - j0.05
0.81 - j0.10
2.08 - j0.65
2.07 - j0.38
2.04 - j0.37
Z
Z
=
=
Test circuit impedance as measured from
gate to ground.
source
Test circuit impedance as measured
from drain to ground.
load
Output
Matching
Network
Device
Under Test
Input
Matching
Network
Z
Z
source
load
Figure 9. Series Equivalent Source and Load Impedance
MRF9060LSR1
RF Device Data
Freescale Semiconductor
8
PACKAGE DIMENSIONS
MRF9060LSR1
RF Device Data
Freescale Semiconductor
9
MRF9060LSR1
RF Device Data
Freescale Semiconductor
10
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
10
Sept. 2008
•
•
Data sheet revised to reflect part status change, p. 1, including use of applicable overlay.
Updated Part Numbers in Table 5, Component Designations and Values, to RoHS compliant part
numbers, p. 4
•
•
Replaced Case Outline 360C-05, Issue E with Issue F, p. 9-10.
Added Product Documentation and Revision History, p. 11
MRF9060LSR1
11
RF Device Data
Freescale Semiconductor
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Document Number: MRF9060-1
Rev. 10, 9/2008
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