MRF9060NBR1 [FREESCALE]
RF Power Field Effect Transistors; 射频功率场效应晶体管
| 型号： | MRF9060NBR1 |
| 厂家： | 
Freescale |
| 描述： | RF Power Field Effect Transistors |
| 文件： | 总16页 (文件大小：507K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Document Number: MRF9060N
Rev. 10, 5/2006
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
MRF9060NR1
MRF9060NBR1
Designed for broadband commercial and industrial applications with frequen-
cies up to 1000 MHz. The high gain and broadband performance of these
devices make them ideal for large-signal, common-source amplifier applications
in 26 volt base station equipment.
• Typical Performance at 945 MHz, 26 Volts
Output Power — 60 Watts PEP
Power Gain — 18.0 dB
945 MHz, 60 W, 26 V
LATERAL N-CHANNEL
BROADBAND
Efficiency — 40% (Two Tones)
IMD — -31.5 dBc
• Capable of Handling 5:1 VSWR, @ 26 Vdc, 945 MHz, 60 Watts CW
RF POWER MOSFETs
Output Power
Features
• Excellent Thermal Stability
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Integrated ESD Protection
• 200_C Capable Plastic Package
CASE 1265-08, STYLE 1
TO-270-2
• N Suffix Indicates Lead-Free Terminations. RoHS Compliant.
PLASTIC
MRF9060NR1
• TO-270-2 Available in Tape and Reel. R1 Suffix = 500 Units per 24 mm,
13 inch Reel.
• TO-272-2 Available in Tape and Reel. R1 Suffix = 500 Units per 44 mm,
13 inch Reel.
CASE 1337-03, STYLE 1
TO-272-2
PLASTIC
MRF9060NBR1
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Vdc
Vdc
Drain-Source Voltage
Gate-Source Voltage
V
DSS
- 0.5, +65
- 0.5, +15
V
GS
Total Device Dissipation @ T = 25°C
Derate above 25°C
P
D
223
1.79
W
W/°C
C
Storage Temperature Range
Operating Junction Temperature
T
- 65 to +150
200
°C
°C
stg
T
J
Table 2. Thermal Characteristics
(1)
Characteristic
Thermal Resistance, Junction to Case
Symbol
Value
Unit
R
0.56
°C/W
θ
JC
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
© Freescale Semiconductor, Inc., 2006. All rights reserved.
Table 3. ESD Protection Characteristics
Test Conditions
Class
Human Body Model
1 (Minimum)
M2 (Minimum)
Machine Model
Charge Device Model
MRF9060NR1
MRF9060NBR1
C6 (Minimum)
C5 (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD 22-A113, IPC/JEDEC J-STD-020
°C
MRF9060NR1
MRF9060NBR1
1
3
260
260
Table 5. Electrical Characteristics (T = 25°C unless otherwise noted)
C
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V = 65 Vdc, V = 0 Vdc)
I
I
—
—
—
—
—
—
10
1
μAdc
μAdc
μAdc
DSS
DSS
GSS
DS
GS
Zero Gate Voltage Drain Leakage Current
(V = 26 Vdc, V = 0 Vdc)
DS
GS
Gate-Source Leakage Current
I
1
(V = 5 Vdc, V = 0 Vdc)
GS
DS
On Characteristics
Gate Threshold Voltage
(V = 10 Vdc, I = 200 μAdc)
V
V
2
3
2.8
3.7
4
5
Vdc
Vdc
Vdc
S
GS(th)
DS
D
Gate Quiescent Voltage
(V = 26 Vdc, I = 450 mAdc)
GS(Q)
DS
D
Drain-Source On-Voltage
(V = 10 Vdc, I = 1.3 Adc)
V
DS(on)
—
—
0.21
5.3
0.4
—
GS
D
Forward Transconductance
(V = 10 Vdc, I = 4 Adc)
g
fs
DS
D
Dynamic Characteristics
Input Capacitance
(V = 26 Vdc 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)
DS
C
—
—
—
101
53
—
—
—
pF
pF
iss
GS
Output Capacitance
(V = 26 Vdc 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)
DS
C
oss
GS
Reverse Transfer Capacitance
C
2.5
pF
rss
(V = 26 Vdc 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)
DS
GS
(continued)
MRF9060NR1 MRF9060NBR1
RF Device Data
Freescale Semiconductor
2
Table 5. Electrical Characteristics (T = 25°C unless otherwise noted) (continued)
C
Characteristic
Symbol
Min
Typ
Max
Unit
Functional Tests (In Freescale Test Fixture, 50 ohm system)
Two-Tone Common-Source Amplifier Power Gain
G
17
18
—
dB
ps
(V = 26 Vdc, P = 60 W PEP, I = 450 mA,
DD
out
DQ
f1 = 945.0 MHz, f2 = 945.1 MHz)
Two-Tone Drain Efficiency
η
37
—
—
—
40
—
-28
-9
%
dBc
dB
(V = 26 Vdc, P = 60 W PEP, I = 450 mA,
DD
out
DQ
f1 = 945.0 MHz, f2 = 945.1 MHz)
3rd Order Intermodulation Distortion
IMD
IRL
-31.5
-14.5
18
(V = 26 Vdc, P = 60 W PEP, I = 450 mA,
DD
out
DQ
f1 = 945.0 MHz, f2 = 945.1 MHz)
Input Return Loss
(V = 26 Vdc, P = 60 W PEP, I = 450 mA,
DD
out
DQ
f1 = 945.0 MHz, f2 = 945.1 MHz)
Two-Tone Common-Source Amplifier Power Gain
G
—
dB
ps
(V = 26 Vdc, P = 60 W PEP, I = 450 mA,
DD
out
DQ
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHZ)
Two-Tone Drain Efficiency
η
—
—
—
40
—
—
—
%
dBc
dB
(V = 26 Vdc, P = 60 W PEP, I = 450 mA,
DD
out
DQ
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHZ)
3rd Order Intermodulation Distortion
IMD
IRL
-31
(V = 26 Vdc, P = 60 W PEP, I = 450 mA,
DD
out
DQ
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHZ)
Input Return Loss
-12.5
(V = 26 Vdc, P = 60 W PEP, I = 450 mA,
DD
out
DQ
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHZ)
MRF9060NR1 MRF9060NBR1
RF Device Data
Freescale Semiconductor
3
B1
B2
V
GG
V
DD
+
+
+
+
C6
Z1
C7
C14
C15
C16
C17
Z18
L1
L2
RF
OUTPUT
C4
Z9
C5
C9
Z11 Z12 Z13
RF
INPUT
Z14
Z15
Z16
Z17
DUT
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z10
C13
C1
C8
C10
C11
C12
C2
C3
Z1
0.240″ x 0.060″ Microstrip
0.240″ x 0.060″ Microstrip
0.500″ x 0.100″ Microstrip
0.100″ x 0.270″ x 0.080″, Taper
0.330″ x 0.270″ Microstrip
0.120″ x 0.270″ Microstrip
0.270″ x 0.520″ x 0.140″, Taper
0.240″ x 0.520″ Microstrip
0.340″ x 0.520″ Microstrip
Z10
Z11
Z12
Z13
Z14
Z15
Z16
Z17
Z18
0.060″ x 0.520″ Microstrip
0.360″ x 0.270″ Microstrip
0.060″ x 0.270″ Microstrip
0.130″ x 0.060″ Microstrip
0.300″ x 0.060″ Microstrip
0.210″ x 0.060″ Microstrip
0.600″ x 0.060″ Microstrip
0.290″ x 0.060″ Microstrip
0.340″ x 0.060″ Microstrip
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
Figure 1. 930-960 MHz Broadband Test Circuit Schematic
Table 6. 930-960 MHz Broadband Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
B1
B2
Short Ferrite Bead
Long Ferrite Bead
95F786
95F787
Newark
Newark
ATC
C1, C7, C13, C14
C2, C3, C11
C4, C5
47 pF Chip Capacitors
100B470JP 500X
44F3360
0.8-8.0 Gigatrim Variable Capacitors
Newark
ATC
11 pF Chip Capacitors (MRF9060NR1)
10 pF Chip Capacitors (MRF9060NBR1)
100B110JP 500X
100B100JP 500X
C6, C15, C16
C8, C9
C10
10 mF, 35 V Tantalum Chip Capacitors
10 pF Chip Capacitors
93F2975
Newark
Newark
ATC
100B100JP 500X
100B3R9CP 500X
100B1R7BP 500X
14F185
3.9 pF Chip Capacitor
C12
1.7 pF Chip Capacitor
ATC
C17
220 mF Electrolytic Chip Capacitor
12.5 nH Inductors
Newark
Coilcraft
Avnet
L1, L2
A04T-5
N1, N2
WB1, WB2
Board Material
PCB
N-Type Panel Mount, Stripline
3052-1648-10
15 mil Brass Wear Blocks
®
30 mil Glass Teflon , ε = 2.55 Copper Clad, 2 oz Cu
RF-35-0300
Taconic
r
Etched Circuit Board
TO-270/TO-272 Surface/Bolt
DSelectronics
MRF9060NR1 MRF9060NBR1
RF Device Data
Freescale Semiconductor
4
C6
C17
V
DD
B1
V
GG
B2
C14
L2
C7
L1
C15 C16
C11
C4
WB1
C5
C8
C9
INPUT
WB2
OUTPUT
C1
C2
C3
C10
C12
C13
MRF9060M
MRF9060MB
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
Figure 2. 930-960 MHz Broadband Test Circuit Component Layout
MRF9060NR1 MRF9060NBR1
RF Device Data
Freescale Semiconductor
5
TYPICAL CHARACTERISTICS
19
18
17
16
50
G
ps
45
η
40
V
P
I
= 26 Vdc
= 60 W (PEP)
= 450 mA
DD
35
out
−10
−12
−14
−28
−30
−32
−34
−36
DQ
15
14
13
Two−Tone, 100 kHz Tone Spacing
IMD
IRL
−16
−18
12
11
930
935
940
945
950
955
960
f, FREQUENCY (MHz)
Figure 3. Class AB Broadband Circuit Performance
19
−15
−20
−25
I
= 625 mA
DQ
18.5
500 mA
450 mA
I
= 275 mA
DQ
−30
18
−35
−40
450 mA
500 mA
17.5
275 mA
−45
−50
−55
17
V
= 26 Vdc
f1 = 945 MHz
V
= 26 Vdc
f1 = 945 MHz
DD
DD
625 mA
f2 = 945.1 MHz
f2 = 945.1 MHz
16.5
1
10
, OUTPUT POWER (WATTS) PEP
100
1
10
P , OUTPUT POWER (WATTS) PEP
out
100
P
out
Figure 4. Power Gain versus Output Power
Figure 5. Intermodulation Distortion versus
Output Power
−10
−20
20
18
60
V
= 26 Vdc
= 450 mA
DD
G
ps
50
40
30
I
DQ
f1 = 945 MHz
−30
−40
−50
−60
f2 = 945.1 MHz
16
14
3rd Order
5th Order
7th Order
12
10
8
20
10
0
V
= 26 Vdc
= 450 mA
DD
η
I
DQ
f = 945 MHz
−70
−80
1
10
100
0.1
1
10
P , OUTPUT POWER (WATTS) AVG.
out
100
P
out
, OUTPUT POWER (WATTS) PEP
Figure 6. Intermodulation Distortion Products
versus Output Power
Figure 7. Power Gain and Efficiency versus
Output Power
MRF9060NR1 MRF9060NBR1
RF Device Data
Freescale Semiconductor
6
TYPICAL CHARACTERISTICS
20
60
G
ps
18
16
40
20
η
14
12
0
V
= 26 Vdc
= 450 mA
DD
I
DQ
f1 = 945 MHz
−20
IMD
f2 = 945.1 MHz
−40
−60
10
8
1
10
, OUTPUT POWER (WATTS) PEP
100
P
out
Figure 8. Power Gain, Efficiency, and IMD versus Output Power
11
10
10
10
9
10
8
10
90 100 110 120 130 140 150 160 170 180 190 200 210
T , JUNCTION TEMPERATURE (°C)
J
2
This above graph displays calculated MTTF in hours x ampere
drain current. Life tests at elevated temperatures have correlated to
better than 10% of the theoretical prediction for metal failure. Divide
2
MTTF factor by I for MTTF in a particular application.
D
Figure 9. MTTF Factor versus Junction Temperature
MRF9060NR1 MRF9060NBR1
RF Device Data
Freescale Semiconductor
7
f = 930 MHz
Z = 2 Ω
o
f = 960 MHz
Z
f = 930 MHz
source
Z
load
f = 960 MHz
V
DD
= 26 V, I = 450 mA, P = 60 W PEP
DQ out
f
Z
Z
load
source
MHz
Ω
Ω
930
945
960
0.63 + j0.57
0.60 + j0.41
0.57 + j0.45
1.8 + j0.84
1.7 + j0.55
1.6 + j0.36
Z
Z
=
Test circuit impedance as measured from
gate to ground.
source
=
Test circuit impedance as measured
from drain to ground.
load
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
Z
source
load
Figure 10. Series Equivalent Source and Load Impedance
MRF9060NR1 MRF9060NBR1
RF Device Data
Freescale Semiconductor
8
NOTES
MRF9060NR1 MRF9060NBR1
RF Device Data
Freescale Semiconductor
9
NOTES
MRF9060NR1 MRF9060NBR1
RF Device Data
Freescale Semiconductor
10
NOTES
MRF9060NR1 MRF9060NBR1
RF Device Data
Freescale Semiconductor
11
PACKAGE DIMENSIONS
MRF9060NR1 MRF9060NBR1
RF Device Data
Freescale Semiconductor
12
MRF9060NR1 MRF9060NBR1
RF Device Data
Freescale Semiconductor
13
MRF9060NR1 MRF9060NBR1
RF Device Data
Freescale Semiconductor
14
A
E1
B
r1
C A B
2X
M
aaa
DRAIN ID
PIN 3
GATE
LEAD
DRAIN
LEAD
D1
2X b1
D
1
M
2
aaa
C A
NOTE 8
E
E2
VIEW Y-Y
NOTES:
1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M, 1994.
3. DATUM PLANE −H− IS LOCATED AT THE TOP OF
LEAD AND IS COINCIDENT WITH THE LEAD
WHERE THE LEAD EXITS THE PLASTIC BODY AT
THE TOP OF THE PARTING LINE.
F
ZONE "J"
DATUM
PLANE
c1
H
A
4. DIMENSIONS "D" AND "E1" DO NOT INCLUDE
MOLD PROTRUSION. ALLOWABLE PROTRUSION
IS .006 PER SIDE. DIMENSIONS "D" AND "E1" DO
INCLUDE MOLD MISMATCH AND ARE
DETERMINED AT DATUM PLANE −H−.
5. DIMENSION "b1" DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE .005 TOTAL IN EXCESS
OF THE "b1" DIMENSION AT MAXIMUM MATERIAL
CONDITION.
A1
A2
E2
SEATING
PLANE
C
Y
Y
7
6. DATUMS −A− AND −B− TO BE DETERMINED AT
DATUM PLANE −H−.
7. DIMENSION A2 APPLIES WITHIN ZONE "J" ONLY.
8. CROSSHATCHING REPRESENTS THE EXPOSED
AREA OF THE HEAT SLUG.
INCHES
DIM MIN MAX
MILLIMETERS
MIN
2.54
0.99
1.02
MAX
2.64
1.09
1.07
23.67
A
A1
A2
D
.100
.039
.040
.928
.104
.043
.042
STYLE 1:
.932 23.57
PIN 1. DRAIN
2. GATE
3. SOURCE
.810 BSC
20.57 BSC
D1
E
.438
.248
.241
.442
.252
.245
11.12
6.30
6.12
11.23
6.40
6.22
E1
E2
F
.025 BSC
0.64 BSC
b1
c1
r1
.193
.007
.063
.199
.011
.068
4.90
.18
1.60
5.05
.28
1.73
aaa
.004
.10
CASE 1337-03
ISSUE C
TO-272-2
PLASTIC
MRF9060NBR1
MRF9060NR1 MRF9060NBR1
RF Device Data
Freescale Semiconductor
15
How to Reach Us:
Home Page:
www.freescale.com
E-mail:
support@freescale.com
USA/Europe or Locations Not Listed:
Freescale Semiconductor
Technical Information Center, CH370
1300 N. Alma School Road
Chandler, Arizona 85224
+1-800-521-6274 or +1-480-768-2130
support@freescale.com
Information in this document is provided solely to enable system and software
implementers to use Freescale Semiconductor products. There are no express or
implied copyright licenses granted hereunder to design or fabricate any integrated
circuits or integrated circuits based on the information in this document.
Europe, Middle East, and Africa:
Freescale Halbleiter Deutschland GmbH
Technical Information Center
Schatzbogen 7
81829 Muenchen, Germany
+44 1296 380 456 (English)
+46 8 52200080 (English)
+49 89 92103 559 (German)
+33 1 69 35 48 48 (French)
support@freescale.com
Freescale Semiconductor reserves the right to make changes without further notice to
any products herein. Freescale Semiconductor makes no warranty, representation or
guarantee regarding the suitability of its products for any particular purpose, nor does
Freescale Semiconductor assume any liability arising out of the application or use of
any product or circuit, and specifically disclaims any and all liability, including without
limitation consequential or incidental damages. “Typical” parameters that may be
provided in Freescale Semiconductor data sheets and/or specifications can and do
vary in different applications and actual performance may vary over time. All operating
parameters, including “Typicals”, must be validated for each customer application by
customer’s technical experts. Freescale Semiconductor does not convey any license
under its patent rights nor the rights of others. Freescale Semiconductor products are
not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or other applications intended to support or sustain life,
or for any other application in which the failure of the Freescale Semiconductor product
could create a situation where personal injury or death may occur. Should Buyer
purchase or use Freescale Semiconductor products for any such unintended or
unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all
claims, costs, damages, and expenses, and reasonable attorney fees arising out of,
directly or indirectly, any claim of personal injury or death associated with such
unintended or unauthorized use, even if such claim alleges that Freescale
Japan:
Freescale Semiconductor Japan Ltd.
Headquarters
ARCO Tower 15F
1-8-1, Shimo-Meguro, Meguro-ku,
Tokyo 153-0064
Japan
0120 191014 or +81 3 5437 9125
support.japan@freescale.com
Asia/Pacific:
Freescale Semiconductor Hong Kong Ltd.
Technical Information Center
2 Dai King Street
Tai Po Industrial Estate
Tai Po, N.T., Hong Kong
+800 2666 8080
support.asia@freescale.com
For Literature Requests Only:
Freescale Semiconductor Literature Distribution Center
P.O. Box 5405
Semiconductor was negligent regarding the design or manufacture of the part.
Denver, Colorado 80217
Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc.
All other product or service names are the property of their respective owners.
ꢀ Freescale Semiconductor, Inc. 2006. All rights reserved.
1-800-441-2447 or 303-675-2140
Fax: 303-675-2150
LDCForFreescaleSemiconductor@hibbertgroup.com
RoHS-compliant and/or Pb-free versions of Freescale products have the functionality and electrical
characteristics of their non-RoHS-compliant and/or non-Pb-free counterparts. For further
information, see http://www.freescale.com or contact your Freescale sales representative.
For information on Freescale’s Environmental Products program, go to http://www.freescale.com/epp.
Document Number: MRF9060N
Rev. 10, 5/2006
相关型号：
©2020 ICPDF网 联系我们和版权申明