MRF9060R1_技术文档

ꢒ ꢓꢎ ꢓ ꢀꢓ ꢔꢕ

SEMICONDUCTOR TECHNICAL DATA

Order this document

by MRF9060/D

The RF Sub–Micron MOSFET Line

ꢀ ꢁ ꢂ ꢃꢄꢅ ꢆ ꢁꢇꢅ ꢈꢉ ꢊ ꢋꢋ ꢅ ꢌꢍ ꢎꢆ ꢏꢐ ꢑ ꢇꢑ ꢍꢃ ꢆ ꢑ

ꢒꢀ ꢁ ꢖꢗꢘ ꢗꢀꢙ

N–Channel Enhancement–Mode Lateral MOSFETs

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Designed for broadband commercial and industrial applications with frequen-

cies up to 1.0 GHz. The high gain and broadband performance of these devices

make them ideal for large–signal, common–source amplifier applications in 26

volt base station equipment.

• Typical Two–Tone Performance at 945 MHz, 26 Volts

Output Power — 60 Watts PEP

Power Gain — 17 dB

945 MHz, 60 W, 26 V

LATERAL N–CHANNEL

BROADBAND

Efficiency — 40%

IMD — –31 dBc

RF POWER MOSFETs

• Integrated ESD Protection

• Designed for Maximum Gain and Insertion Phase Flatness

• Capable of Handling 10:1 VSWR, @ 26 Vdc, 945 MHz, 60 Watts CW

Output Power

• Excellent Thermal Stability

• Characterized with Series Equivalent Large–Signal Impedance Parameters

• In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel.

CASE 360B–05, STYLE 1

NI–360

MRF9060R1

CASE 360C–05, STYLE 1

NI–360S

MRF9060SR1

MAXIMUM RATINGS

Rating

Symbol

Value

65

Unit

Vdc

Drain–Source Voltage

Gate–Source Voltage

V

DSS

V

GS

–0.5, +15

Total Device Dissipation @ T = 25°C

Derate above 25°C

MRF9060R1

P

D

159

0.91

219

Watts

W/°C

Watts

W/°C

C

MRF9060SR1

1.25

Storage Temperature Range

T

–65 to +200

200

°C

stg

Operating Junction Temperature

T

J

ESD PROTECTION CHARACTERISTICS

Test Conditions

Class

Human Body Model

1 (Minimum)

M1 (Minimum)

Machine Model

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

MRF9060R1

MRF9060SR1

R

1.1

0.8

°C/W

θ

JC

NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

REV 4

MOTOROLA RF DEVICE DATA

MRF9060R1 MRF9060SR1

1

 Motorola, Inc. 2002

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

C

Characteristic

OFF CHARACTERISTICS

Zero Gate Voltage Drain Leakage Current

Symbol

Min

Typ

Max

Unit

I

—

10

1

µAdc

DSS

(V = 65 Vdc, V = 0 Vdc)

DS

GS

Zero Gate Voltage Drain Leakage Current

(V = 26 Vdc, V = 0 Vdc)

I

DSS

DS

GS

Gate–Source Leakage Current

(V = 5 Vdc, V = 0 Vdc)

I

1

GSS

GS

DS

ON CHARACTERISTICS

Gate Threshold Voltage

V

2

2.9

3.7

4

Vdc

S

GS(th)

GS(Q)

DS(on)

(V = 10 Vdc, I = 200 µAdc)

DS

D

Gate Quiescent Voltage

(V = 26 Vdc, I = 450 mAdc)

—

0.4

—

DS

D

Drain–Source On–Voltage

(V = 10 Vdc, I = 1.3 Adc)

V

0.17

5.3

GS

D

Forward Transconductance

(V = 10 Vdc, I = 4 Adc)

g

fs

DS

D

DYNAMIC CHARACTERISTICS

Input Capacitance

(V = 26 Vdc 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)

DS

C

—

98

50

2

—

pF

iss

GS

Output Capacitance

(V = 26 Vdc 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)

DS

C

oss

GS

Reverse Transfer Capacitance

C

pF

rss

(V = 26 Vdc 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)

DS

GS

(continued)

MRF9060R1 MRF9060SR1

2

MOTOROLA RF DEVICE DATA

ELECTRICAL CHARACTERISTICS — continued (T = 25°C unless otherwise noted)

C

Characteristic

Symbol

Min

Typ

Max

Unit

FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system)

Two–Tone Common–Source Amplifier Power Gain

G

16

17

—

dB

ps

(V = 26 Vdc, P = 60 W PEP, I = 450 mA,

DD

out

DQ

f1 = 945.0 MHz, f2 = 945.1 MHz)

Two–Tone Drain Efficiency

η

36

—

40

–31

–16

17

—

–28

–9

%

dBc

dB

(V = 26 Vdc, P = 60 W PEP, I = 450 mA,

DD

out

DQ

f1 = 945.0 MHz, f2 = 945.1 MHz)

3rd Order Intermodulation Distortion

IMD

IRL

(V = 26 Vdc, P = 60 W PEP, I = 450 mA,

DD

out

DQ

f1 = 945.0 MHz, f2 = 945.1 MHz)

Input Return Loss

(V = 26 Vdc, P = 60 W PEP, I = 450 mA,

DD

out

DQ

f1 = 945.0 MHz, f2 = 945.1 MHz)

Two–Tone Common–Source Amplifier Power Gain

G

—

dB

ps

(V = 26 Vdc, P = 60 W PEP, I = 450 mA,

DD

out

DQ

f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,

f2 = 960.1 MHz)

Two–Tone Drain Efficiency

η

—

39

—

%

dBc

dB

(V = 26 Vdc, P = 60 W PEP, I = 450 mA,

DD

out

DQ

f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,

f2 = 960.1 MHz)

3rd Order Intermodulation Distortion

IMD

IRL

–31

–16

(V = 26 Vdc, P = 60 W PEP, I = 450 mA,

DD

out

DQ

f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,

f2 = 960.1 MHz)

Input Return Loss

(V = 26 Vdc, P = 60 W PEP, I = 450 mA,

DD

out

DQ

f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,

f2 = 960.1 MHz)

Power Output, 1 dB Compression Point

P

—

70

17

51

—

W

dB

%

1dB

(V = 26 Vdc, P = 60 W CW, I = 450 mA,

DD

out

DQ

f1 = 945.0 MHz)

Common–Source Amplifier Power Gain

G

ps

(V = 26 Vdc, P = 60 W CW, I = 450 mA,

DD

out

DQ

f1 = 945.0 MHz)

Drain Efficiency

η

(V = 26 Vdc, P = 60 W CW, I = 450 mA,

DD

out

DQ

f1 = 945.0 MHz)

Output Mismatch Stress

(V = 26 Vdc, P = 60 W CW, I = 450 mA,

f = 945.0 MHz, VSWR = 10:1, All Phase Angles at Frequency

of Tests)

Ψ

DD

out

DQ

No Degradation In Output Power

MOTOROLA RF DEVICE DATA

MRF9060R1 MRF9060SR1

3

ꢔ ꢊ

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ꢈꢊ ꢒ

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ꢑ ꢑ

ꢍ

ꢎ ꢎ

ꢐ

ꢈ ꢉ

ꢋ ꢊ

ꢈꢏ

ꢈꢊ ꢌ

ꢈꢊ ꢉ

ꢈ ꢊꢏ

ꢖꢊ

ꢖ ꢕ

ꢈꢓ

ꢈꢘ

ꢋꢊꢊ ꢋꢊ ꢕ

ꢀ ꢁ

ꢇ ꢅ ꢆꢄꢅ ꢆ

ꢀ ꢁ

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ꢋꢊ ꢗ

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ꢋꢊ ꢓ

ꢋꢊ ꢌ

ꢈꢊꢊ

ꢋꢊ ꢉ

ꢈꢊ ꢕ

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ꢋꢏ

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ꢋ

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ꢈ

ꢊ

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ꢎ

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ꢆ

ꢈ

ꢊ

ꢈ

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ꢈ

ꢊ

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ꢈ

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Z1

0.240″ x 0.060″ Microstrip

0.500″ x 0.100″ Microstrip

0.180″ x 0.270″ Microstrip

0.350″ x 0.270″ Microstrip

0.270″ x 0.520 x 0.140″ Taper

0.170″ x 0.520″ Microstrip

0.410″ x 0.520″ Microstrip

0.060″ x 0.520″ Microstrip

Z10

0.360″ x 0.270″ Microstrip

0.060″ x 0.270″ Microstrip

0.110″ x 0.060″ Microstrip

0.330″ x 0.060″ Microstrip

0.230″ x 0.060″ Microstrip

0.740″ x 0.060″ Microstrip

0.130″ x 0.060″ Microstrip

0.340″ x 0.060″ Microstrip

Z2

Z3

Z4

Z5

Z6

Z7

Z8

Z9

Z11

Z12

Z13

Z14

Z15

Z16

Z17

Figure 1. 945 MHz Broadband Test Circuit Schematic

Table 1. 945 MHz Broadband Test Circuit Component Designations and Values

Part

Description

Value, P/N or DWG

95F786

Manufacturer

B1

B2

Short Ferrite Bead

Long Ferrite Bead

Newark

ATC

95F787

C1, C7, C13, C14

C2, C3, C11

C4, C5, C8, C9

C6, C15, C16

C10

47 pF Chip Capacitors, B Case

0.8–8.0 Gigatrim Variable Capacitors

10 pF Chip Capacitors, B Case

10 mF, 35 V Tantalum Chip Capacitor

3.0 pF Chip Capacitor, B Case

100B470JP 500X

44F3360

Newark

ATC

100B100JP 500X

93F2975

Newark

ATC

100B3R0JP 500X

C12

0.5 pF Chip Capacitor, B Case (MRF9060)

0.7 pF Chip Capacitor, B Case (MRF9060S)

100B0R5BP 500X

100B0R7BP 500X

ATC

C17

220 mF Electrolytic Chip Capacitor

12.5 nH Inductors

14F185

Newark

Coilcraft

Avnet

L1, L2

A04T–5

N1, N2

N–Type Panel Mount, Stripline

3052–1648–10

WB1, WB2

Board Material

PCB

10 mil Brass Wear Blocks



30 mil Glass Teflon , ε = 3.55 Copper Clad, 1 oz Cu

RF–35–0300

Taconic

r

Etched Circuit Board

MRF9060 900 MHz, Rev. 2

MRF9060R1 MRF9060SR1

4

MOTOROLA RF DEVICE DATA

ꢈꢉ

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ꢈꢏ

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ꢈꢊ ꢌ ꢈꢊ ꢉ

ꢈꢓ

ꢚ ꢔꢊ

ꢈꢌ

ꢈꢙ

ꢈꢘ

ꢂꢃ ꢄꢅ ꢆ

ꢚ ꢔꢕ

ꢇ ꢅꢆꢄ ꢅꢆ

ꢈꢊ

ꢈꢊ ꢓ

ꢈꢕ

ꢈꢒ

ꢈꢊꢊ

ꢈ

ꢊ

ꢗ

ꢈ

ꢊ

ꢕ

MRF9060

900 MHz

ꢀꢛ ꢜꢝ ꢗ ꢕ

Figure 2. 930 – 960 MHz Broadband Test Circuit Component Layout

MOTOROLA RF DEVICE DATA

MRF9060R1 MRF9060SR1

5

TYPICAL CHARACTERISTICS

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ꢊꢙ

ꢊꢏ

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h

ꢓ ꢗ

ꢊꢉ

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ꢊꢒ

ꢊꢕ

ꢍ

ꢄ

ꢂ

ꢴ ꢕ ꢉ ꢍ ꢥꢦ

ꢴ ꢉ ꢗ ꢚ ꢤꢄ ꢟ ꢄ ꢧ

ꢴ ꢓ ꢌꢗ ꢵꢡ

ꢎ ꢎ

ꢒ ꢌ

ꢩ ꢪ ꢫ

ꢝ ꢒ ꢗ

ꢝ ꢒ ꢕ

ꢝ ꢒ ꢓ

ꢝ ꢊ ꢗ

ꢝ ꢊ ꢕ

ꢝ ꢊ ꢓ

ꢎ ꢭ

ꢂ ꢠꢎ

ꢂ ꢀꢖ

ꢆꢸꢩ ꢝ ꢆꢩ ꢹꢛ ꢠꢛ ꢺ ꢲꢪꢶ ꢛ ꢵꢛ ꢹꢫ ꢨ

ꢊ ꢗꢗ ꢻꢯꢰ ꢆꢩ ꢹꢛ ꢣ ꢱꢺ ꢦꢼꢹ ꢽ

ꢝ ꢒ ꢉ

ꢝ ꢒ ꢙ

ꢝ ꢊ ꢉ

ꢝ ꢊ ꢙ

ꢊꢊ

ꢊꢗ

ꢘꢒ ꢗ

ꢘꢒ ꢌ

ꢘ ꢓꢗ

ꢘ ꢓꢌ

ꢘ

ꢌ

ꢗ

ꢘ

ꢌ

ꢘ ꢉꢗ

ꢬ

ꢨ

ꢁ

ꢀ

ꢟ

ꢭ

ꢅ

ꢟ

ꢃ

ꢈ

ꢮ

ꢤ

ꢠ

ꢯ

ꢰ

ꢧ

Figure 3. Class AB Broadband Circuit Performance

ꢊ ꢙ

ꢊ ꢏꢞ ꢌ

ꢊ ꢏ

ꢝ ꢕ ꢗ

ꢝ ꢕ ꢌ

ꢝ ꢒ ꢗ

ꢂ

ꢴ ꢉ ꢌꢗ ꢵꢡ

ꢌ ꢗꢗ ꢢꢵ ꢡ

ꢎ

ꢭ

ꢂ

ꢴ

ꢕ

ꢏ

ꢌ

ꢵ

ꢡ

ꢎ

ꢭ

ꢝ ꢒ ꢌ

ꢝ ꢓ ꢗ

ꢝ ꢓ ꢌ

ꢝ ꢌ ꢗ

ꢝ ꢌ ꢌ

ꢝ ꢉ ꢗ

ꢓ

ꢌ

ꢗ

ꢢ

ꢵ

ꢡ

ꢊ ꢉꢞ ꢌ

ꢊ ꢉ

ꢌ

ꢗ

ꢵ

ꢡ

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ꢌ

ꢗ

ꢵ

ꢡ

ꢕ

ꢏ

ꢌ

ꢢ

ꢵ

ꢡ

ꢉ ꢌꢗ ꢵꢡ

ꢍ

ꢴ ꢕꢉ ꢍ ꢥꢦ

ꢬ ꢊ ꢴ ꢘꢓ ꢌ ꢠꢯ ꢰ

ꢍ

ꢴ ꢕ ꢉ ꢍꢥ ꢦ

ꢬ ꢊ ꢴ ꢘ ꢓꢌ ꢠꢯ ꢰ

ꢎ ꢎ

ꢎ

ꢊ ꢌꢞ ꢌ

ꢊ ꢌ

ꢬ

ꢕ

ꢴ

ꢘ

ꢓ

ꢌ

ꢞ

ꢊ

ꢠ

ꢯ

ꢰ

ꢬ

ꢕ

ꢴ

ꢘ

ꢓ

ꢌ

ꢞ

ꢊ

ꢠ

ꢯ

ꢰ

ꢊ

ꢗ

ꢊ

ꢗ

ꢊ

ꢊ ꢗ

ꢨ ꢇ ꢅꢆꢄ ꢅꢆ ꢄ ꢇ ꢚꢟ ꢀ ꢤꢚꢡꢆꢆꢣ ꢧ ꢄ ꢟ ꢄ

ꢊ

ꢗ

ꢄ ꢨ ꢇ ꢅꢆ ꢄꢅ ꢆ ꢄ ꢇꢚꢟ ꢀ ꢤ ꢚꢡꢆꢆ ꢣꢧ ꢄ ꢟꢄ

ꢩ ꢪꢫ

ꢄ

ꢩ ꢪ ꢫ

Figure 4. Power Gain versus Output Power

Figure 5. Intermodulation Distortion versus

Output Power

ꢗ

ꢉ

ꢗ

ꢕ ꢗ

ꢊ ꢙ

ꢍ

ꢴ ꢕ ꢉ ꢍꢥ ꢦ

ꢴ ꢓ ꢌꢗ ꢵꢡ

ꢎ

ꢑ

ꢱ

ꢲ

ꢝ

ꢊ

ꢗ

ꢂ

ꢎ ꢭ

ꢬꢊ ꢴ ꢘ ꢓꢌ ꢠꢯ ꢰ

ꢌ ꢗ

ꢓ ꢗ

ꢝ ꢕꢗ

ꢝ ꢒꢗ

ꢝ ꢓꢗ

ꢝ ꢌꢗ

ꢝ ꢉꢗ

ꢝ ꢏꢗ

ꢬ

ꢕ

ꢴ

ꢘ

ꢓ

ꢌ

ꢞ

ꢊ

ꢠ

ꢯ

ꢰ

ꢊ ꢉ

ꢊ ꢓ

h

ꢒ ꢗ

ꢕ ꢗ

ꢒ

ꢶ

ꢥ

ꢢ

ꢇ

ꢶ

ꢥ

ꢛ

ꢶ

ꢊ ꢕ

ꢊ ꢗ

ꢍ

ꢴ ꢕ ꢉ ꢍ ꢥꢦ

ꢎ ꢎ

ꢌ

ꢫ

ꢷ

ꢢ

ꢇ

ꢶ

ꢥ

ꢛ

ꢶ

ꢊ ꢗ

ꢗ

ꢂ

ꢴ ꢓ ꢌꢗ ꢵꢡ

ꢬ ꢴ ꢘ ꢓꢌ ꢠꢯ ꢰ

ꢎ

ꢭ

ꢏ

ꢫ

ꢷ

ꢢ

ꢇ

ꢶ

ꢥ

ꢛ

ꢶ

ꢙ

ꢊ ꢗ

ꢨ ꢇ ꢅꢆꢄ ꢅꢆ ꢄ ꢇ ꢚꢟ ꢀ ꢤꢚꢡꢆꢆꢣ ꢧ ꢡꢍ ꢑ ꢞ

ꢊ

ꢗ

ꢞ

ꢊ

ꢗ

ꢊ

ꢗ

ꢄ

ꢩꢪ ꢫ

ꢨ

ꢇ

ꢅ

ꢆ

ꢄ

ꢅ

ꢆ

ꢄ

ꢇ

ꢚ

ꢟ

ꢀ

ꢤ

ꢚ

ꢡ

ꢆ

ꢣ

ꢧ

ꢄ

ꢟ

ꢄ

ꢩ ꢪ ꢫ

Figure 6. Intermodulation Distortion Products

versus Output Power

Figure 7. Power Gain and Efficiency versus

Output Power

MRF9060R1 MRF9060SR1

6

MOTOROLA RF DEVICE DATA

ꢉ ꢗ

ꢊꢙ

ꢊꢉ

ꢑ

ꢱ ꢲ

ꢓ ꢗ

ꢕ ꢗ

ꢊꢓ

ꢊꢕ

ꢍ

ꢴ ꢕ ꢉ ꢍ ꢥꢦ

ꢴ ꢓ ꢌꢗ ꢵꢡ

ꢎ ꢎ

h

ꢂ

ꢎ ꢭ

ꢬ ꢊ ꢴ ꢘ ꢓꢌ ꢠꢯ ꢰ

ꢗ

ꢬ ꢕ ꢴ ꢘ ꢓꢌ ꢞ ꢊ ꢠꢯ ꢰ

ꢝ ꢕ ꢗ

ꢊꢗ

ꢙ

ꢝ ꢓ ꢗ

ꢝ ꢉ ꢗ

ꢂ ꢠꢎ

ꢉ

ꢊ

ꢊ ꢗ

ꢨ ꢇ ꢅꢆꢄ ꢅꢆ ꢄ ꢇ ꢚꢟ ꢀ ꢤꢚꢡꢆꢆꢣ ꢧ ꢄ ꢟ ꢄ

ꢊ ꢗꢗ

ꢄ

ꢩ ꢪ ꢫ

Figure 8. Power Gain, Efficiency, and IMD

versus Output Power

MOTOROLA RF DEVICE DATA

MRF9060R1 MRF9060SR1

7

ꢋ ꢴ ꢌ Ω

ꢩ

ꢋ

ꢼ ꢹ

ꢬ ꢴ ꢘꢉ ꢗ ꢠ ꢯꢰ

ꢬ ꢴ ꢘꢒ ꢗ ꢠ ꢯꢰ

ꢋ

ꢾ

ꢇ ꢖ

ꢬ ꢴ ꢘ ꢉꢗ ꢠꢯ ꢰ

ꢬ ꢴ ꢘ ꢒꢗ ꢠꢯ ꢰ

ꢍ

ꢎ ꢎ

ꢴ ꢕꢉ ꢍꢨ ꢂ ꢴ ꢓ ꢌꢗ ꢵꢡ ꢨ ꢄ ꢴ ꢉ ꢗ ꢚ ꢄ ꢟ ꢄ

ꢎ ꢭ ꢩ ꢪ ꢫ

f

Z

in

Z

OL

*

MHz

Ω

930

945

960

0.80 + j0.10

0.80 + j0.05

0.81 + j0.10

2.08 – j0.65

2.07 – j0.38

2.04 – j0.37

Z

= Complex conjugate of source impedance.

in

* = Complex conjugate of the optimum load

impedance at a given output power, voltage,

IMD, bias current and frequency.

OL

ꢃꢩ ꢫ ꢛꢿ

ꢋ ꢾ ꢸꢺ ꢲ ꢦꢷꢩ ꢲꢛꢹ ꣀꢺ ꢲꢛ ꢥ ꢩ ꢹ ꢫ ꢶꢺ ꢥ ꢛꢩ ꢬꢬ ꢲ ꣀ ꢛꢫ ꢸꢛ ꢛ ꢹ ꢽ ꢺꢼ ꢹꢨ ꢩ ꢪꢫ ꢱ ꢪꢫ

ꢇ ꢖ

ꢱꢩ ꢸꢛꢶꢨ ꢥꢶ ꢺ ꢼꢹ ꢛꢬꢬ ꢼꢦꢼ ꢛꢹꢦꣁ ꢺ ꢹꢥ ꢼꢹ ꢫ ꢛꢶ ꢵꢩ ꢥ ꢪꣂ ꢺꢫ ꢼ ꢩꢹ ꢥ ꢼꢲꢫ ꢩ ꢶꢫ ꢼꢩ ꢹ ꢞ

ꢇ ꢪ ꢫꢱ ꢪ ꢫ

ꢎꢛ ꢜꢼꢦꢛ

ꢂ ꢹꢱꢪ ꢫ

ꢠ ꢺꢫ ꢦꢷꢼ ꢹꢽ

ꢃꢛ ꢫ ꢸꢩꢶ ꢻ

ꢠꢺ ꢫ ꢦꢷ ꢼꢹ ꢽ

ꢃꢛ ꢫ ꢸꢩ ꢶꢻ

ꢅꢹ ꢥ ꢛꢶ ꢆꢛ ꢲꢫ

Z

*

in

OL

Figure 9. Series Equivalent Input and Output Impedance

MRF9060R1 MRF9060SR1

MOTOROLA RF DEVICE DATA

8

NOTES

MOTOROLA RF DEVICE DATA

MRF9060R1 MRF9060SR1

9

NOTES

MRF9060R1 MRF9060SR1

10

MOTOROLA RF DEVICE DATA

PACKAGE DIMENSIONS

2X

Q

ꢠ

ꢔ

ꢃ ꢇ ꢆꢟ ꢣ ꢿ

ꢊꢞ ꢂ ꢃ ꢆꢟ ꢀ ꢄꢀ ꢟ ꢆ ꢎ ꢂ ꢠꢟꢃ ꢣ ꢂ ꢇꢃ ꢣ ꢡ ꢃꢎ ꢆꢇ ꢖꢟ ꢀ ꢡꢃ ꢈ ꢟꢣ

ꢄ ꢟꢀ ꢡ ꢣꢠꢟ ꢮ ꢊꢓꢞ ꢌꢠꢝꢊ ꢘꢘꢓꢞ

G

1

ꢺꢺ ꢺ

ꢆ ꢡ

B

ꢕꢞ ꢈ ꢇ ꢃ ꢆꢀ ꢇ ꢖꢖ ꢂꢃ ꢑ ꢎ ꢂ ꢠꢟꢃ ꢣ ꢂꢇ ꢃ ꢿ ꢂ ꢃ ꢈꢯ ꢞ

ꢒꢞ ꢎ ꢂ ꢠꢟꢃ ꢣ ꢂꢇ ꢃ ꢯ ꢂ ꢣ ꢠꢟ ꢡꢣ ꢅ ꢀ ꢟꢎ ꢗꢞ ꢗꢒꢗ ꢤꢗ ꢞꢏꢉ ꢕꢧ ꢡ ꢚ ꢡꢮ

ꢁ ꢀ ꢇꢠ ꢄꢡ ꢈ ꣃꢡ ꢑ ꢟ ꢔ ꢇꢎ ꢮꢞ

3

INCHES

DIM MIN MAX

MILLIMETERS

B

MIN

ꢕꢗꢞ ꢊꢘ

ꢌꢞ ꢏꢕ

ꢒꢞ ꢊꢙ

ꢌꢞ ꢒꢒ

ꢊꢞ ꢓꢗ

ꢗꢞ ꢊꢗ

MAX

ꢕꢗꢞ ꢓ ꢌ

ꢌꢞ ꢘ ꢏ

ꢓꢞ ꢓ ꢌ

ꢌꢞ ꢌ ꢘ

ꢊꢞ ꢉ ꢌ

ꢗꢞ ꢊ ꢌ

2

(FLANGE)

A

B

ꢗꢞ ꢏꢘꢌ

ꢗꢞ ꢕꢕꢌ

ꢗꢞ ꢊꢕꢌ

ꢗꢞ ꢕꢊꢗ

ꢗꢞ ꢗꢌꢌ

ꢗꢞ ꢗꢗꢓ

ꢗꢞ ꢙꢗꢌ

ꢗꢞ ꢕꢒꢌ

ꢗꢞ ꢊꢏꢌ

ꢗꢞ ꢕꢕꢗ

ꢗꢞ ꢗꢉꢌ

ꢗꢞ ꢗꢗꢉ

2X K

^2XD

ꣀ ꣀ ꣀ

C

ꢠ

ꢆ ꢡ

ꢔ

R

D

(LID)

E

F

ꢠ

ꢔ

ꢦꢦꢦ

ꢆ ꢡ

G

ꢗꢞ ꢌꢉꢕ ꢢꢔ ꢣꢈ

ꢊꢓꢞ ꢕꢙ ꢢꢔ ꢣꢈ

H

ꢗꢞ ꢗꢏꢏ

ꢗꢞ ꢕꢕꢗ

ꢗꢞ ꢒꢌꢌ

ꢗꢞ ꢒꢌꢏ

ꢗꢞ ꢊꢕꢌ

ꢗꢞ ꢕꢕꢏ

ꢗꢞ ꢕꢕꢌ

ꢗꢞ ꢗꢙꢏ

ꢗꢞ ꢕꢌꢗ

ꢗꢞ ꢒꢉꢌ

ꢗꢞ ꢒꢉꢒ

ꢗꢞ ꢊꢒꢌ

ꢗꢞ ꢕꢒꢒ

ꢗꢞ ꢕꢒꢌ

ꢊꢞ ꢘꢉ

ꢌꢞ ꢌꢘ

ꢘꢞ ꢗꢕ

ꢘꢞ ꢗꢏ

ꢒꢞ ꢊꢙ

ꢌꢞ ꢏꢏ

ꢌꢞ ꢏꢕ

ꢕꢞ ꢕ ꢊ

ꢉꢞ ꢒ ꢌ

ꢘꢞ ꢕ ꢏ

ꢘꢞ ꢕ ꢕ

ꢒꢞ ꢓ ꢒ

ꢌꢞ ꢘ ꢕ

ꢌꢞ ꢘ ꢏ

F

K

H

ꢠ

ꢔ

M

ꢦ

ꢆ

ꢡ

N

(LID)

Q

C

E

R

S

aaa

bbb

ccc

ꢗꢞ ꢗꢗꢌ ꢢꢀ ꢟ ꢁ

ꢗꢞ ꢗꢊꢗ ꢢꢀ ꢟ ꢁ

ꢗꢞ ꢗꢊꢌ ꢢꢀ ꢟ ꢁ

ꢗꢞ ꢊꢒꢢ ꢀ ꢟꢁ

ꢗꢞ ꢕꢌꢢ ꢀ ꢟꢁ

ꢗꢞ ꢒꢙꢢ ꢀ ꢟꢁ

S

(INSULATOR)

ꢠ

ꢔ

ꢺ

ꢆ

ꢡ

SEATING

PLANE

T

ꢣ

ꢆ

ꢮ

ꢖ

ꢟ

ꢊ

ꢿ

ꢄ ꢂꢃ ꢊꢞ ꢎ ꢀ ꢡꢂ ꢃ

ꢕꢞ ꢑ ꢡꢆ ꢟ

ꢒꢞ ꢣ ꢇꢅ ꢀ ꢈ ꢟ

ꢠ

ꢔ

ꣀ

ꢆ ꢡ

M

(INSULATOR)

CASE 360B–05

ISSUE F

A

NI–360

MRF9060R1

A

(FLANGE)

B

1

2

ꢃ ꢇ ꢆꢟ ꢣ ꢿ

ꢊꢞ ꢂ ꢃ ꢆꢟ ꢀ ꢄꢀ ꢟ ꢆ ꢎ ꢂ ꢠꢟꢃ ꢣ ꢂ ꢇꢃ ꢣ ꢡ ꢃꢎ ꢆꢇ ꢖꢟ ꢀ ꢡꢃ ꢈ ꢟꢣ

ꢄ ꢟꢀ ꢡ ꢣꢠꢟ ꢮ ꢊꢓꢞ ꢌꢠꢝꢊ ꢘꢘꢓꢞ

ꢕꢞ ꢈ ꢇ ꢃ ꢆꢀ ꢇ ꢖꢖ ꢂꢃ ꢑ ꢎ ꢂ ꢠꢟꢃ ꢣ ꢂꢇ ꢃ ꢿ ꢂ ꢃ ꢈꢯ ꢞ

ꢒꢞ ꢎ ꢂ ꢠꢟꢃ ꢣ ꢂꢇ ꢃ ꢯ ꢂ ꢣ ꢠꢟ ꢡꢣ ꢅ ꢀ ꢟꢎ ꢗꢞ ꢗꢒꢗ ꢤꢗ ꢞꢏꢉ ꢕꢧ ꢡ ꢚ ꢡꢮ

ꢁ ꢀ ꢇꢠ ꢄꢡ ꢈ ꣃꢡ ꢑ ꢟ ꢔ ꢇꢎ ꢮꢞ

^2XK

(FLANGE)

^2XD

ꢠ

ꣀ

ꢆ

ꢡ

ꢔ

INCHES

DIM MIN MAX

MILLIMETERS

R

MIN

ꢘꢞ ꢌꢒ

ꢌꢞ ꢏꢕ

ꢕꢞ ꢉꢏ

ꢌꢞ ꢒꢒ

ꢗꢞ ꢙꢘ

ꢗꢞ ꢊꢗ

ꢊꢞ ꢓꢌ

ꢕꢞ ꢊꢉ

ꢘꢞ ꢗꢕ

ꢘꢞ ꢗꢏ

ꢌꢞ ꢏꢏ

ꢌꢞ ꢏꢕ

MAX

ꢘꢞ ꢏꢙ

ꢌꢞ ꢘꢏ

ꢒꢞ ꢘꢓ

ꢌꢞ ꢌꢘ

ꢊꢞ ꢊꢓ

ꢗꢞ ꢊꢌ

ꢊꢞ ꢏꢗ

ꢕꢞ ꢘꢕ

ꢘꢞ ꢕꢏ

ꢘꢞ ꢕꢕ

ꢌꢞ ꢘꢕ

ꢌꢞ ꢘꢏ

(LID)

A

B

ꢗꢞ ꢒꢏꢌ

ꢗꢞ ꢕꢕꢌ

ꢗꢞ ꢊꢗꢌ

ꢗꢞ ꢕꢊꢗ

ꢗꢞ ꢗꢒꢌ

ꢗꢞ ꢗꢗꢓ

ꢗꢞ ꢗꢌꢏ

ꢗꢞ ꢗꢙꢌ

ꢗꢞ ꢒꢌꢌ

ꢗꢞ ꢒꢌꢏ

ꢗꢞ ꢕꢕꢏ

ꢗꢞ ꢕꢕꢌ

ꢗꢞ ꢒꢙꢌ

ꢗꢞ ꢕꢒꢌ

ꢗꢞ ꢊꢌꢌ

ꢗꢞ ꢕꢕꢗ

ꢗꢞ ꢗꢓꢌ

ꢗꢞ ꢗꢗꢉ

ꢗꢞ ꢗꢉꢏ

ꢗꢞ ꢊꢊꢌ

ꢗꢞ ꢒꢉꢌ

ꢗꢞ ꢒꢉꢒ

ꢗꢞ ꢕꢒ

ꢠ

ꢦ

ꢆ

ꢡ

ꢔ

C

N

F

(LID)

D

H

E

ꢠ

ꢔ

ꢦ

ꢆ

ꢡ

F

H

K

E

M

N

C

S

R

(INSULATOR)

S

ꢗ

ꢞ

ꢕ

ꢒ

ꢌ

aaa

bbb

ccc

ꢗꢞ ꢗꢗꢌ ꢢꢀ ꢟ ꢁ

ꢗꢞ ꢗꢊꢗ ꢢꢀ ꢟ ꢁ

ꢗꢞ ꢗꢊꢌ ꢢꢀ ꢟ ꢁ

ꢗꢞ ꢊꢒꢢ ꢀ ꢟꢁ

ꢗꢞ ꢕꢌꢢ ꢀ ꢟꢁ

ꢗꢞ ꢒꢙꢢ ꢀ ꢟꢁ

ꢠ

ꢔ

ꢺ

ꢆ

ꢡ

SEATING

PLANE

PIN 3

T

M

(INSULATOR)

ꢣ

ꢆ

ꢮ

ꢖ

ꢟ

ꢊ

ꢿ

ꢠ

ꣀ

ꢆ ꢡ

ꢔ

ꢄ ꢂꢃ ꢊꢞ ꢎ ꢀ ꢡꢂ ꢃ

ꢕꢞ ꢑ ꢡꢆ ꢟ

ꢒꢞ ꢣ ꢇꢅ ꢀ ꢈ ꢟ

CASE 360C–05

ISSUE D

NI–360S

MRF9060SR1

MOTOROLA RF DEVICE DATA

MRF9060R1 MRF9060SR1

11

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding

the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and

specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola

data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”

must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of

others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other

applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury

or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola

and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees

arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that

Motorola was negligent regarding the design or manufacture of the part. Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

MOTOROLA and the

logo are registered in the US Patent & Trademark Office. All other product or service names are the property of their respective owners.

E Motorola, Inc. 2002.

How to reach us:

USA/EUROPE/Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 1–303–675–2140 or 1–800–441–2447

JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3–20–1, Minami–Azabu. Minato–ku, Tokyo 106–8573 Japan. 81–3–3440–3569

ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. 852–26668334

Technical Information Center: 1–800–521–6274

HOME PAGE: http://www.motorola.com/semiconductors/

MRF9060R1 MRF9060SR1

12

MOTOROLA RF DEVICE DMARTFA9060/D

◊


型号：	MRF9060R1
厂家：	MOTOROLA
描述：	945 MHz, 60 W, 26 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs 945兆赫， 60 W， 26 V横向N沟道宽带射频功率MOSFET 射频
文件：	总12页 (文件大小：392K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

MRF9060R1 [MOTOROLA]

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