MRF9060MBR1 [MOTOROLA]
The RF Sub-micron MOSFET Line RF POWER FIELD EFFECT TRANSISTORS N-channel Enhancement-mode Lateral MOSFETs; 射频亚微米MOSFET行射频功率场效应晶体管N沟道增强模式横向的MOSFET![MRF9060MBR1](http://pdffile.icpdf.com/pdf1/p00119/img/icpdf/MRF9060MR1_650711_icpdf.jpg)
型号: | MRF9060MBR1 |
厂家: | ![]() |
描述: | The RF Sub-micron MOSFET Line RF POWER FIELD EFFECT TRANSISTORS N-channel Enhancement-mode Lateral MOSFETs |
文件: | 总12页 (文件大小:419K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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ꢒ ꢓꢎ ꢓ ꢀꢓ ꢔꢕ
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF9060M/D
The RF Sub–Micron MOSFET Line
ꢀ ꢁ ꢂ ꢃꢄꢅ ꢆ ꢁꢇꢅ ꢈꢉ ꢊ ꢋꢋ ꢅ ꢌꢍ ꢎꢆ ꢏꢐ ꢑ ꢇꢑ ꢍꢃ ꢆ ꢑ
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequen-
cies up to 1.0 GHz. The high gain and broadband performance of these devices
make them ideal for large–signal, common–source amplifier applications in
26 volt base station equipment.
ꢒ
ꢀ
ꢁ
ꢖ
ꢗ
ꢘ
ꢗ
ꢒ
ꢀ
ꢙ
ꢒ
ꢀ
ꢁ
ꢖ
ꢗ
ꢘ
ꢗ
ꢒ
ꢚ
ꢀ
ꢙ
945 MHz, 60 W, 26 V
LATERAL N–CHANNEL
BROADBAND
• Typical Performance at 945 MHz, 26 Volts
Output Power — 60 Watts PEP
Power Gain — 18.0 dB
RF POWER MOSFETs
Efficiency — 40% (Two Tones)
IMD — –31.5 dBc
• Integrated ESD Protection
• Capable of Handling 5:1 VSWR, @ 26 Vdc, 945 MHz, 60 Watts CW
Output Power
• Excellent Thermal Stability
• Characterized with Series Equivalent Large–Signal Impedance Parameters
CASE 1265–07, STYLE 1
TO–270 DUAL LEAD
PLASTIC
• TO–270 Dual Lead Available in Tape and Reel. R1 Suffix = 500 Units per
24 mm, 13 inch Reel.
MRF9060MR1
• TO–272 Dual Lead Available in Tape and Reel. R1 Suffix = 500 Units per
44 mm, 13 inch Reel.
CASE 1337–01, STYLE 1
TO–272 DUAL LEAD
PLASTIC
MRF9060MBR1
MAXIMUM RATINGS
Rating
Symbol
Value
65
Unit
Vdc
Vdc
Drain–Source Voltage
Gate–Source Voltage
V
DSS
V
GS
–0.5, +15
Total Device Dissipation @ T = 25°C
Derate above 25°C
P
D
223
1.79
Watts
W/°C
C
Storage Temperature Range
Operating Junction Temperature
T
–65 to +150
175
°C
°C
stg
T
J
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
Max
Unit
R
0.56
°C/W
θ
JC
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 4
Motorola, Inc. 2002
ESD PROTECTION CHARACTERISTICS
Test Conditions
Class
Human Body Model
1 (Minimum)
M2 (Minimum)
Machine Model
Charge Device Model
MRF9060MR1
MRF9060MBR1
C6 (Minimum)
C5 (Minimum)
MOISTURE SENSITIVITY LEVEL
Test Methodology
Rating
Per JESD 22–A113
MRF9060MR1
MRF9060MBR1
1
3
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Characteristic
OFF CHARACTERISTICS
Zero Gate Voltage Drain Leakage Current
Symbol
Min
Typ
Max
Unit
I
—
—
—
—
—
—
10
1
µAdc
µAdc
µAdc
DSS
(V = 65 Vdc, V = 0 Vdc)
DS
GS
Zero Gate Voltage Drain Leakage Current
(V = 26 Vdc, V = 0 Vdc)
I
DSS
DS
GS
Gate–Source Leakage Current
(V = 5 Vdc, V = 0 Vdc)
I
1
GSS
GS
DS
ON CHARACTERISTICS
Gate Threshold Voltage
V
V
2
3
2.8
3.7
4
5
Vdc
Vdc
Vdc
S
GS(th)
GS(Q)
DS(on)
(V = 10 Vdc, I = 200 µAdc)
DS
D
Gate Quiescent Voltage
(V = 26 Vdc, I = 450 mAdc)
DS
D
Drain–Source On–Voltage
(V = 10 Vdc, I = 1.3 Adc)
V
—
—
0.21
5.3
0.4
—
GS
D
Forward Transconductance
(V = 10 Vdc, I = 4 Adc)
g
fs
DS
D
DYNAMIC CHARACTERISTICS
Input Capacitance
(V = 26 Vdc 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)
DS
C
—
—
—
101
53
—
—
—
pF
pF
iss
GS
Output Capacitance
(V = 26 Vdc 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)
DS
C
oss
GS
Reverse Transfer Capacitance
C
2.5
pF
rss
(V = 26 Vdc 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)
DS
GS
(continued)
MRF9060MR1 MRF9060MBR1
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS — continued (T = 25°C unless otherwise noted)
C
Characteristic
Symbol
Min
Typ
Max
Unit
FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system)
Two–Tone Common–Source Amplifier Power Gain
G
17
18
—
dB
ps
(V = 26 Vdc, P = 60 W PEP, I = 450 mA,
DD
out
DQ
f1 = 945.0 MHz, f2 = 945.1 MHz)
Two–Tone Drain Efficiency
η
37
—
—
—
40
–31.5
–14.5
18
—
–28
–9
%
dBc
dB
(V = 26 Vdc, P = 60 W PEP, I = 450 mA,
DD
out
DQ
f1 = 945.0 MHz, f2 = 945.1 MHz)
3rd Order Intermodulation Distortion
IMD
IRL
(V = 26 Vdc, P = 60 W PEP, I = 450 mA,
DD
out
DQ
f1 = 945.0 MHz, f2 = 945.1 MHz)
Input Return Loss
(V = 26 Vdc, P = 60 W PEP, I = 450 mA,
DD
out
DQ
f1 = 945.0 MHz, f2 = 945.1 MHz)
Two–Tone Common–Source Amplifier Power Gain
G
—
dB
ps
(V = 26 Vdc, P = 60 W PEP, I = 450 mA,
DD
out
DQ
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHZ)
Two–Tone Drain Efficiency
η
—
—
—
40
—
—
—
%
dBc
dB
(V = 26 Vdc, P = 60 W PEP, I = 450 mA,
DD
out
DQ
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHZ)
3rd Order Intermodulation Distortion
IMD
IRL
–31
(V = 26 Vdc, P = 60 W PEP, I = 450 mA,
DD
out
DQ
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHZ)
Input Return Loss
–12.5
(V = 26 Vdc, P = 60 W PEP, I = 450 mA,
DD
out
DQ
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHZ)
MOTOROLA RF DEVICE DATA
MRF9060MR1 MRF9060MBR1
3
ꢔ ꢊ
ꢔ ꢕ
ꢌ
ꢐ ꢐ
ꢌ
ꢍ ꢍ
ꢏ
ꢏ
ꢏ
ꢏ
ꢈ ꢉ
ꢋ ꢊ
ꢈꢒ
ꢈꢊ ꢖ
ꢈ
ꢊ
ꢓ
ꢈꢊ ꢉ
ꢈ ꢊꢒ
ꢋꢊ ꢎ
ꢗꢊ
ꢗ ꢕ
ꢀ ꢁ
ꢇ ꢅ ꢆꢄꢅ ꢆ
ꢈꢖ
ꢋꢙ
ꢈꢓ
ꢈꢙ
ꢋꢊꢊ ꢋꢊ ꢕ ꢋꢊ ꢑ
ꢀ ꢁ
ꢂ ꢃ ꢄꢅ ꢆ
ꢋꢊ ꢖ
ꢋ
ꢊ
ꢓ
ꢋꢊ ꢉ
ꢋꢊ ꢒ
ꢍ
ꢅ
ꢆ
ꢋ
ꢕ
ꢋ
ꢑ
ꢋ
ꢖ
ꢋ
ꢓ
ꢋ
ꢉ
ꢋ
ꢒ
ꢋ
ꢎ
ꢋ
ꢊ
ꢘ
ꢈ
ꢊ
ꢑ
ꢈ ꢊ
ꢈ
ꢎ
ꢈ
ꢊ
ꢘ
ꢈ
ꢊ
ꢊ
ꢈ
ꢊ
ꢕ
ꢈ
ꢕ
ꢈ
ꢑ
Z1
0.240″ x 0.060″ Microstrip
0.240″ x 0.060″ Microstrip
0.500″ x 0.100″ Microstrip
0.100″ x 0.270″ x 0.080″, Taper
0.330″ x 0.270″ Microstrip
0.120″ x 0.270″ Microstrip
0.270″ x 0.520″ x 0.140″, Taper
0.240″ x 0.520″ Microstrip
0.340″ x 0.520″ Microstrip
Z10
Z11
Z12
Z13
Z14
Z15
Z16
Z17
Z18
0.060″ x 0.520″ Microstrip
0.360″ x 0.270″ Microstrip
0.060″ x 0.270″ Microstrip
0.130″ x 0.060″ Microstrip
0.300″ x 0.060″ Microstrip
0.210″ x 0.060″ Microstrip
0.600″ x 0.060″ Microstrip
0.290″ x 0.060″ Microstrip
0.340″ x 0.060″ Microstrip
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
Figure 1. 930–960 MHz Broadband Test Circuit Schematic
Table 1. 930–960 MHz Broadband Test Circuit Component Designations and Values
Part
Description
Value, P/N or DWG
95F786
Manufacturer
B1
B2
Short Ferrite Bead
Long Ferrite Bead
Newark
Newark
ATC
95F787
C1, C7, C13, C14
C2, C3, C11
C4, C5
47 pF Chip Capacitors, B Case
100B470JP 500X
44F3360
0.8–8.0 Gigatrim Variable Capacitors
Newark
ATC
11 pF Chip Capacitors, B Case (MRF9060MR1)
10 pF Chip Capacitors, B Case (MRF9060MBR1)
100B110JP 500X
100B100JP 500X
C6, C15, C16
C8, C9
C10
10 mF, 35 V Tantalum Chip Capacitors
10 pF Chip Capacitors, B Case
3.9 pF Chip Capacitor, B Case
1.7 pF Chip Capacitor, B Case
220 mF Electrolytic Chip Capacitor
12.5 nH Inductors
93F2975
Newark
Newark
ATC
100B100JP 500X
100B3R9CP 500X
100B1R7BP 500X
14F185
C12
ATC
C17
Newark
Coilcraft
Avnet
L1, L2
A04T–5
N1, N2
WB1, WB2
Board Material
PCB
N–Type Panel Mount, Stripline
3052–1648–10
15 mil Brass Wear Blocks
30 mil Glass Teflon , ε = 2.55 Copper Clad, 2 oz Cu
RF–35–0300
Taconic
r
Etched Circuit Board
TO–270/TO–272 Surface/Bolt
DSelectronics
MRF9060MR1 MRF9060MBR1
4
MOTOROLA RF DEVICE DATA
ꢈꢉ
ꢈꢊ ꢒ
ꢌ
ꢍ ꢍ
ꢔ ꢊ
ꢌ
ꢐ ꢐ
ꢔ ꢕ
ꢈꢊ ꢖ
ꢗ ꢕ
ꢈꢒ
ꢗꢊ
ꢈꢊ ꢓ ꢈꢊ ꢉ
ꢈꢊꢊ
ꢈꢖ
ꢚ ꢔꢊ
ꢈꢓ
ꢈꢎ
ꢈꢙ
ꢂꢃ ꢄꢅ ꢆ
ꢚ ꢔꢕ
ꢇ ꢅꢆ ꢄꢅ ꢆ
ꢈꢊ
ꢈꢕ
ꢈꢑ
ꢈꢊ ꢘ
ꢈꢊ ꢕ
ꢈꢊ ꢑ
MRF9060M
MRF9060MB
Figure 2. 930–960 MHz Broadband Test Circuit Component Layout
MOTOROLA RF DEVICE DATA
MRF9060MR1 MRF9060MBR1
5
ꢊꢙ
ꢊꢎ
ꢊꢒ
ꢊꢉ
ꢓ ꢘ
ꢐ
ꢛ ꢜ
ꢖ ꢓ
η
ꢖ ꢘ
ꢌ
ꢄ
ꢂ
ꢞ ꢕꢉ ꢌ ꢟꢠ
ꢞ ꢉ ꢘ ꢚ ꢤꢄ ꢥ ꢄ ꢦ
ꢞ ꢖꢓ ꢘ ꢨꢩ
ꢍ ꢍ
ꢑ ꢓ
ꢡ ꢢꢣ
ꢝ ꢊ ꢘ
ꢝ ꢊ ꢕ
ꢝ ꢊ ꢖ
ꢝ ꢕ ꢎ
ꢝ ꢑ ꢘ
ꢝ ꢑ ꢕ
ꢝ ꢑ ꢖ
ꢝ ꢑ ꢉ
ꢍ ꢧ
ꢊꢓ
ꢊꢖ
ꢊꢑ
ꢆꢪ ꢡꢝ ꢆꢡ ꢫꢬ ꢭ ꢊ ꢘꢘ ꢮꢯꢰ ꢆꢡ ꢫꢬ ꢱ ꢛꢲ ꢠꢳꢫ ꢴ
ꢂ ꢹꢍ
ꢂ ꢀꢗ
ꢝ ꢊ ꢉ
ꢝ ꢊ ꢎ
ꢊꢕ
ꢊ ꢊ
ꢙꢑ ꢘ
ꢙ
ꢑ
ꢓ
ꢙ
ꢖ
ꢘ
ꢙ
ꢖ
ꢓ
ꢙ
ꢓ
ꢘ
ꢙ
ꢓ
ꢓ
ꢙ ꢉꢘ
ꢵ
ꢭ
ꢁ
ꢶ
ꢬ
ꢷ
ꢢ
ꢬ
ꢫ
ꢠ
ꢸ
ꢤ
ꢹ
ꢯ
ꢰ
ꢦ
Figure 3. Class AB Broadband Circuit Performance
ꢊ ꢙ
ꢝ ꢊ ꢓ
ꢝ ꢕ ꢘ
ꢝ ꢕ ꢓ
ꢂ
ꢞ ꢉꢕ ꢓ ꢨ ꢩ
ꢍ ꢧ
ꢊꢎꢽ ꢓ
ꢓ ꢘꢘ ꢨ ꢩ
ꢖ ꢓꢘ ꢨ ꢩ
ꢂ
ꢞ ꢕ ꢒꢓ ꢨꢩ
ꢍ
ꢧ
ꢝ ꢑ ꢘ
ꢊ ꢎ
ꢝ ꢑ ꢓ
ꢝ ꢖ ꢘ
ꢖ ꢓꢘ ꢨꢩ
ꢓ ꢘꢘ ꢨꢩ
ꢊꢒꢽ ꢓ
ꢕ ꢒꢓ ꢨ ꢩ
ꢝ ꢖ ꢓ
ꢝ ꢓ ꢘ
ꢝ ꢓ ꢓ
ꢊ ꢒ
ꢌ
ꢞ ꢕ ꢉ ꢌꢟ ꢠ
ꢵ ꢊ ꢞ ꢙ ꢖꢓ ꢹꢯ ꢰ
ꢌ
ꢞ ꢕꢉ ꢌ ꢟꢠ
ꢵ ꢊ ꢞ ꢙꢖ ꢓ ꢹ ꢯꢰ
ꢍ
ꢍ
ꢍ
ꢍ
ꢉ
ꢕ
ꢓ
ꢨ
ꢩ
ꢵ
ꢕ
ꢞ
ꢙ
ꢖ
ꢓ
ꢽ
ꢊ
ꢹ
ꢯ
ꢰ
ꢵ
ꢕ
ꢞ
ꢙ
ꢖ
ꢓ
ꢽ
ꢊ
ꢹ
ꢯ
ꢰ
ꢊ
ꢉ
ꢽ
ꢓ
ꢊ
ꢊꢘ
ꢭ ꢇ ꢅꢆ ꢄꢅ ꢆ ꢄ ꢇꢚꢥ ꢀ ꢤ ꢚꢩꢆꢆ ꢱꢦ ꢄ ꢥꢄ
ꢊ
ꢘ
ꢘ
ꢊ
ꢊ ꢘ
ꢄ ꢭ ꢇ ꢅꢆꢄ ꢅꢆ ꢄ ꢇ ꢚꢥ ꢀ ꢤꢚꢩꢆꢆꢱ ꢦ ꢄ ꢥ ꢄ
ꢡ ꢢ ꢣ
ꢊ
ꢘ
ꢘ
ꢄ
ꢡꢢ ꢣ
Figure 4. Power Gain versus Output Power
Figure 5. Intermodulation Distortion versus
Output Power
ꢝ ꢊꢘ
ꢝ ꢕꢘ
ꢕ ꢘ
ꢊ ꢎ
ꢉ
ꢘ
ꢌ
ꢞ ꢕ ꢉ ꢌꢟ ꢠ
ꢞ ꢖ ꢓꢘ ꢨꢩ
ꢍ
ꢍ
ꢐ
ꢛ
ꢜ
ꢓ ꢘ
ꢖ ꢘ
ꢑ ꢘ
ꢂ
ꢍ ꢧ
ꢵꢊ ꢞ ꢙ ꢖꢓ ꢹꢯ ꢰ
ꢝ ꢑꢘ
ꢝ ꢖꢘ
ꢝ ꢓꢘ
ꢝ ꢉꢘ
ꢵ
ꢕ
ꢞ
ꢙ
ꢖ
ꢓ
ꢽ
ꢊ
ꢹ
ꢯ
ꢰ
ꢊ ꢉ
ꢊ ꢖ
ꢑ
ꢶ
ꢟ
ꢇ
ꢶ
ꢟ
ꢬ
ꢶ
ꢓꢣ ꢾ ꢇ ꢶ ꢟꢬꢶ
ꢒꢣ ꢾ ꢇ ꢶ ꢟꢬꢶ
ꢊ ꢕ
ꢊ ꢘ
ꢎ
ꢕ ꢘ
ꢊ ꢘ
ꢘ
ꢌ
ꢞ ꢕ ꢉ ꢌ ꢟꢠ
ꢞ ꢖ ꢓꢘ ꢨꢩ
ꢍ
ꢍ
η
ꢂ
ꢍ ꢧ
ꢵ ꢞ ꢙ ꢖꢓ ꢹꢯ ꢰ
ꢝ ꢒꢘ
ꢝ ꢎꢘ
ꢊ
ꢊ
ꢘ
ꢊ
ꢘ
ꢘ
ꢘ
ꢽ
ꢊ
ꢊ
ꢊ ꢘ
ꢄ ꢭ ꢇ ꢅꢆꢄ ꢅꢆ ꢄ ꢇ ꢚꢥ ꢀ ꢤꢚꢩꢆꢆꢱ ꢦ ꢩꢌ ꢐ ꢽ
ꢡ ꢢ ꢣ
ꢊ
ꢘ
ꢘ
ꢄ
ꢡꢢ ꢣ
ꢭ
ꢇ
ꢅ
ꢆ
ꢄ
ꢅ
ꢆ
ꢄ
ꢇ
ꢚ
ꢥ
ꢀ
ꢤ
ꢚ
ꢩ
ꢆ
ꢆ
ꢱ
ꢦ
ꢄ
ꢥ
ꢄ
Figure 6. Intermodulation Distortion Products
versus Output Power
Figure 7. Power Gain and Efficiency versus
Output Power
MRF9060MR1 MRF9060MBR1
6
MOTOROLA RF DEVICE DATA
ꢕꢘ
ꢉ ꢘ
ꢐ
ꢛ ꢜ
ꢊꢎ
ꢊꢉ
ꢖ ꢘ
ꢕ ꢘ
η
ꢊꢖ
ꢊꢕ
ꢘ
ꢌ
ꢞ ꢕꢉ ꢌ ꢟꢠ
ꢞ ꢖꢓ ꢘ ꢨ ꢩ
ꢍ
ꢍ
ꢂ
ꢍ ꢧ
ꢵ ꢊ ꢞ ꢙꢖ ꢓ ꢹ ꢯꢰ
ꢝ
ꢕ
ꢘ
ꢂ ꢹꢍ
ꢵ ꢕ ꢞ ꢙꢖ ꢓꢽ ꢊ ꢹ ꢯꢰ
ꢝ ꢖ ꢘ
ꢝ ꢉ ꢘ
ꢊꢘ
ꢎ
ꢊ
ꢊ ꢘ
ꢭ ꢇ ꢅꢆꢄ ꢅꢆ ꢄ ꢇ ꢚꢥ ꢀ ꢤꢚꢩꢆꢆꢱ ꢦ ꢄ ꢥ ꢄ
ꢊ ꢘꢘ
ꢄ
ꢡ ꢢ ꢣ
Figure 8. Power Gain, Efficiency, and IMD versus Output Power
MOTOROLA RF DEVICE DATA
MRF9060MR1 MRF9060MBR1
7
ꢵ ꢞ ꢙꢑ ꢘ ꢹꢯ ꢰ
ꢋ ꢞ ꢕ Ω
ꢡ
ꢵ
ꢞ
ꢙ
ꢉ
ꢘ
ꢹ
ꢯ
ꢰ
ꢋ
ꢵ ꢞ ꢙ ꢑꢘ ꢹꢯ ꢰ
ꢜ ꢡꢢ ꢶ ꢠ ꢬ
ꢋ
ꣀ
ꢿꢡ ꢲ ꢟ
ꢵ ꢞ ꢙ ꢉꢘ ꢹꢯ ꢰ
ꢌ
ꢍ ꢍ
ꢞ ꢕꢉ ꢌ ꢭ ꢂ ꢞ ꢖ ꢓꢘ ꢨꢩ ꢭ ꢄ ꢞ ꢉ ꢘ ꢚ ꢄ ꢥ ꢄ
ꢍ ꢧ ꢡ ꢢ ꢣ
f
Z
Z
load
source
MHz
Ω
Ω
930
945
960
0.63 + j0.57
0.60 + j0.41
0.57 + j0.45
1.8 + j0.84
1.7 + j0.55
1.6 + j0.36
Z
Z
=
Test circuit impedance as measured from
gate to ground.
source
=
Test circuit impedance as measured
from drain to ground.
load
ꢇ ꢢ ꢣꢛ ꢢ ꢣ
ꢹꢲ ꢣ ꢠꢾ ꢳꢫ ꢴ
ꢃꢬ ꢣ ꢪꢡ ꢶꢮ
ꢍꢬ ꣁꢳꢠꢬ
ꢅꢫ ꢟ ꢬꢶ
ꢆꢬ ꢜꢣ
ꢂ ꢫꢛꢢ ꢣ
ꢹ ꢲꢣ ꢠꢾꢳ ꢫꢴ
ꢃꢬ ꢣ ꢪꢡꢶ ꢮ
Z
Z
source
load
Figure 9. Series Equivalent Input and Output Impedance
MRF9060MR1 MRF9060MBR1
8
MOTOROLA RF DEVICE DATA
NOTES
MOTOROLA RF DEVICE DATA
MRF9060MR1 MRF9060MBR1
9
PACKAGE DIMENSIONS
E1
B
2X
D3
2X
E4
PIN ONE ID
ꢹ
ꢲꢲ ꢲ
ꢍ ꢩ
ꢃ ꢇ ꢆꢥ ꢱ ꣂ
ꢊꢽ ꢈ ꢇ ꢃ ꢆꢀ ꢇ ꢗꢗ ꢂꢃ ꢐ ꢍ ꢂ ꢹꢥꢃ ꢱ ꢂꢇ ꢃ ꣂ ꢂ ꢃ ꢈꢯ ꢽ
ꢕꢽ ꢂ ꢃ ꢆꢥ ꢀ ꢄꢀ ꢥ ꢆ ꢍ ꢂ ꢹꢥꢃ ꢱ ꢂꢇ ꢃ ꢱ ꢩ ꢃ ꢍ ꢆꢇ ꢗꢥ ꢀ ꢩꢃ ꢈ ꢥ ꢱ
ꢄ ꢥꢀ ꢩ ꢱꢹꢥ ꢻ ꢊꢖꢽ ꢓꢹꢝꢊ ꢙꢙꢖꢽ
ꢑꢽ ꢍ ꢩꢆ ꢅ ꢹ ꢄ ꢗꢩꢃ ꢥ ꢝꢯ ꢝ ꢂ ꢱ ꢗꢇ ꢈ ꢩꢆ ꢥꢍ ꢩ ꢆ ꢆꢇ ꢄ ꢇ ꢁ ꢗꢥ ꢩꢍ
ꢩ ꢃꢍ ꢂ ꢱ ꢈ ꢇ ꢂꢃ ꢈ ꢂ ꢍ ꢥ ꢃꢆ ꢚꢂ ꢆꢯ ꢆ ꢯ ꢥ ꢗꢥ ꢩꢍ ꢚꢯ ꢥ ꢀ ꢥ
ꢆ ꢯ ꢥ ꢗꢥ ꢩꢍ ꢥ ꣃꢂ ꢆꢱ ꢆ ꢯ ꢥ ꢄ ꢗꢩꢱ ꢆ ꢂꢈ ꢔ ꢇꢍ ꢻ ꢩ ꢆ ꢆ ꢯ ꢥ
ꢆ ꢇ ꢄ ꢇ ꢁ ꢆ ꢯ ꢥ ꢄꢩ ꢀꢆ ꢂꢃ ꢐ ꢗꢂ ꢃ ꢥꢽ
D
ꢹ
2X
b1
D1
ꢲ ꢲꢲ
ꢍ ꢩ
ꢖꢽ ꢍ ꢂ ꢹꢥꢃ ꢱ ꢂꢇ ꢃ ꢱ “ꢍ ꢊ꣄ ꢩ ꢃꢍ “ꢥ ꢊ꣄ ꢍ ꢇ ꢃ ꢇ ꢆ ꢂ ꢃ ꢈꢗ ꢅ ꢍ ꢥ
ꢹꢇ ꢗꢍ ꢄ ꢀꢇ ꢆ ꢀ ꢅ ꢱꢂ ꢇ ꢃ ꢽ ꢩ ꢗꢗꢇ ꢚꢩ ꢔꢗꢥ ꢄ ꢀꢇ ꢆ ꢀ ꢅ ꢱꢂ ꢇ ꢃ
ꢂ ꢱ ꢽ ꢘꢘꢉ ꢄ ꢥꢀ ꢱ ꢂꢍ ꢥ ꢽ ꢍ ꢂ ꢹꢥꢃ ꢱ ꢂꢇ ꢃ ꢱ “ꢍ ꢊ꣄ ꢩ ꢃ ꢍ “ꢥ ꢊ꣄ ꢍ ꢇ
ꢂ ꢃ ꢈꢗ ꢅ ꢍ ꢥ ꢹꢇ ꢗꢍ ꢹꢂ ꢱꢹ ꢩꢆ ꢈ ꢯ ꢩ ꢃꢍ ꢩ ꢀꢥ ꢍ ꢥ ꢆꢥ ꢀ ꣅ
ꢹꢂ ꢃ ꢥꢍ ꢩ ꢆ ꢍ ꢩꢆ ꢅ ꢹ ꢄ ꢗꢩꢃ ꢥ ꢝꢯ ꢝꢽ
ꢓꢽ ꢍ ꢂ ꢹꢥꢃ ꢱ ꢂꢇ ꢃ ꢊ ꢍ ꢇ ꢥꢱ ꢃ ꢇ ꢆ ꢂ ꢃ ꢈꢗ ꢅ ꢍ ꢥ ꢍ ꢩꢹ ꢔꢩ ꢀ
ꢄ ꢀꢇ ꢆ ꢀ ꢅ ꢱꢂ ꢇ ꢃ ꢽ ꢩ ꢗꢗꢇ ꢚꢩ ꢔꢗꢥ ꢍ ꢩ ꢹꢔꢩ ꢀ
ꢄ ꢀ ꢇꢆ ꢀ ꢅ ꢱꢂ ꢇ ꢃ ꢱ ꢯ ꢩꢗꢗ ꢔ ꢥ ꢽ ꢘꢘꢓ ꢆꢇ ꢆꢩ ꢗ ꢂ ꢃ ꢥ ꣃꢈ ꢥ ꢱꢱ
ꢇ ꢁ ꢆ ꢯ ꢥ ꢊ ꢍ ꢂ ꢹꢥꢃ ꢱ ꢂ ꢇꢃ ꢩ ꢆ ꢹꢩ ꣃꢂ ꢹꢅ ꢹ ꢹꢩꢆ ꢥꢀ ꢂ ꢩꢗ
ꢈ ꢇ ꢃ ꢍ ꢂꢆ ꢂ ꢇꢃ ꢽ
E
A
ꢉꢽ ꢍ ꢩꢆ ꢅ ꢹꢱ ꢝꢩ ꢝ ꢩ ꢃ ꢍ ꢝꢔ ꢝ ꢆꢇ ꢔ ꢥ ꢍ ꢥ ꢆꢥ ꢀ ꢹꢂꢃ ꢥ ꢍ ꢩ ꢆ
ꢍ ꢩꢆ ꢅ ꢹ ꢄ ꢗꢩꢃ ꢥ ꢝꢯ ꢝꢽ
ꢒꢽ ꢍ ꢂ ꢹꢥꢃ ꢱ ꢂꢇ ꢃ ꢩ ꢕ ꢩ ꢄꢄ ꢗꢂ ꢥꢱ ꢚꢂ ꢆꢯ ꢂ ꢃ ꢋ ꢇ ꢃꢥ “꣄ ꢇ ꢃ ꢗꢻꢽ
ꢎꢽ ꢍ ꢂ ꢹꢥꢃ ꢱ ꢂꢇ ꢃ ꢱ “ꢍ ꣄ ꢩ ꢃ ꢍ “ꢥ ꢕ꣄ ꢍ ꢇ ꢃ ꢇ ꢆ ꢂ ꢃ ꢈꢗ ꢅ ꢍ ꢥ
ꢹꢇ ꢗꢍ ꢄ ꢀꢇ ꢆ ꢀ ꢅ ꢱꢂ ꢇ ꢃ ꢽ ꢩ ꢗꢗꢇ ꢚꢩ ꢔꢗꢥ ꢄ ꢀꢇ ꢆ ꢀ ꢅ ꢱꢂ ꢇ ꢃ
ꢂ ꢱ ꢽ ꢘꢘꢑ ꢄ ꢥꢀ ꢱ ꢂꢍ ꢥ ꢽ ꢍ ꢂ ꢹꢥꢃ ꢱ ꢂꢇ ꢃ ꢱ “ꢍ ꣄ ꢩ ꢃꢍ “ꢥ ꢕ꣄ ꢍ ꢇ
ꢂ ꢃ ꢈꢗ ꢅ ꢍ ꢥ ꢹꢇ ꢗꢍ ꢹꢂ ꢱꢹ ꢩꢆ ꢈ ꢯ ꢩ ꢃꢍ ꢩ ꢀꢥ ꢍ ꢥ ꢆꢥ ꢀ ꣅ
ꢹꢂ ꢃ ꢥꢍ ꢩ ꢆ ꢍ ꢩꢆ ꢅ ꢹ ꢄ ꢗꢩꢃ ꢥ ꢝꢍ ꢝꢽ
E3
EXPOSED
HEATSINK AREA
PIN 1
INCHES
DIM MIN MAX
MILLIMETERS
PIN 2
MIN
ꢊꢽ ꢙꢑ
ꢘꢽ ꢙꢉ
ꢊꢽ ꢘꢕ
MAX
ꢕꢽ ꢊꢑ
ꢊꢽ ꢊꢕ
ꢊꢽ ꢘꢒ
ꢊꢘꢽ ꢒꢒ
ꢙꢽ ꢒꢓ
ꢎꢽ ꢊꢑ
ꢘꢽ ꢉꢊ
ꢊꢊꢽ ꢕꢎ
ꢉꢽ ꢕꢘ
ꢊꢽ ꢎꢎ
ꢖꢽ ꢓꢒ
ꢊꢽ ꢉꢎ
A
A1
A2
D
ꢽ ꢘꢒꢉ
ꢽ ꢘꢑꢎ
ꢽ ꢘꢖꢘ
ꢽ ꢖꢊꢉ
ꢽ ꢑꢒꢉ
ꢽ ꢕꢙꢘ
ꢽ ꢘꢊꢉ
ꢽ ꢖꢑꢉ
ꢽ ꢕꢑꢉ
ꢽ ꢘꢉꢉ
ꢽ ꢊꢓꢘ
ꢽ ꢘꢓꢎ
ꢽ ꢘꢎꢖ
ꢽ ꢘꢖꢖ
ꢽ ꢘꢖꢕ
ꢽ
ꢖ
ꢕ
ꢖ
ꢊ
ꢘ
ꢽ
ꢓ
ꢒ
D2
D1
D2
D3
E
ꢽ ꢑꢎꢖ
ꢽ ꢑꢕꢘ
ꢽ ꢘꢕꢖ
ꢽ ꢖꢖꢖ
ꢽ ꢕꢖꢖ
ꢽ ꢘꢒꢖ
ꢽ ꢊꢎꢘ
ꢽ ꢘꢉꢉ
ꢙꢽ ꢓꢓ
ꢒꢽ ꢑꢒ
ꢘꢽ ꢖꢊ
ꢊꢊꢽ ꢘꢒ
ꢓꢽ ꢙꢙ
ꢊꢽ ꢉꢎ
ꢑꢽ ꢎꢊ
ꢊꢽ ꢖꢒ
E1
E2
E3
E4
F
ꢽ
ꢘ
ꢕ
ꢓ
ꢺ
ꢔ
ꢱ
ꢈ
ꢘ
ꢽ
ꢉ
ꢖ
ꢺ
ꢔ
ꢱ
ꢈ
PIN 3
b1
c1
aaa
ꢽ ꢊꢙꢑ
ꢽ ꢘꢘꢒ
ꢽ ꢊꢙꢙ
ꢽ ꢘꢊꢊ
ꢖꢽ ꢙꢘ
ꢘꢽ ꢊꢎ
ꢓꢽ ꢘꢉ
ꢘꢽ ꢕꢎ
BOTTOM VIEW
ꢽ
ꢘ
ꢘ
ꢖ
ꢘ
ꢽ
ꢊ
ꢘ
ꢱ
ꢆ
ꢻ
ꢗ
ꢥ
ꢊ
ꣂ
DATUM
PLANE
c1
H
ꢄ ꢂꢃ ꢊꢽ ꢍ ꢀ ꢩꢂ ꢃ
ꢕꢽ ꢐ ꢩꢆ ꢥ
ꢑꢽ ꢱ ꢇꢅ ꢀ ꢈ ꢥ
A
A1
2X
E2
A2
F
D
NOTE 7
ZONE J
CASE 1265–07
ISSUE F
TO–270 DUAL LEAD
PLASTIC
MRF9060MR1
MRF9060MR1 MRF9060MBR1
10
MOTOROLA RF DEVICE DATA
PACKAGE DIMENSIONS
A
E1
B
r1
2X
ꢹ
ꢹ
ꢹ
ꢲ ꢲꢲ
ꢈ ꢩ
ꢔ
PIN 3
PIN ONE
ID
D1
2X b1
D
1
ꢹ
ꢈ ꢩ
ꢹ
2
ꢲ ꢲꢲ
PIN ONE
ID
E
VIEW Y–Y
ꢃ ꢇ ꢆꢥ ꢱ ꣂ
ꢊꢽ ꢈ ꢇ ꢃ ꢆꢀ ꢇ ꢗꢗ ꢂꢃ ꢐ ꢍ ꢂ ꢹꢥꢃ ꢱ ꢂꢇ ꢃ ꣂ ꢂ ꢃ ꢈꢯ ꢽ
ꢕꢽ ꢂ ꢃ ꢆꢥ ꢀ ꢄꢀ ꢥ ꢆ ꢍ ꢂ ꢹꢥꢃ ꢱ ꢂꢇ ꢃ ꢱ ꢩ ꢃ ꢍ ꢆꢇ ꢗꢥ ꢀ ꢩꢃ ꢈ ꢥ ꢱ
ꢄ ꢥꢀ ꢩ ꢱꢹꢥ ꢻ ꢊꢖꢽ ꢓꢹꢭ ꢊꢙꢙ ꢖꢽ
ꢑꢽ ꢍ ꢩꢆ ꢅ ꢹ ꢄ ꢗꢩꢃ ꢥ ꢝꢯ ꢝ ꢂ ꢱ ꢗꢇ ꢈ ꢩꢆ ꢥꢍ ꢩ ꢆ ꢆ ꢯ ꢥ ꢆꢇ ꢄ ꢇꢁ
ꢗꢥ ꢩꢍ ꢩ ꢃꢍ ꢂ ꢱ ꢈ ꢇ ꢂꢃ ꢈ ꢂ ꢍ ꢥ ꢃꢆ ꢚꢂ ꢆꢯ ꢆ ꢯ ꢥ ꢗꢥ ꢩꢍ
ꢚꢯ ꢥ ꢀ ꢥ ꢆ ꢯ ꢥ ꢗꢥ ꢩꢍ ꢥ ꣃꢂ ꢆꢱ ꢆ ꢯ ꢥ ꢄ ꢗꢩꢱ ꢆ ꢂꢈ ꢔ ꢇꢍ ꢻ ꢩꢆ
ꢆ ꢯ ꢥ ꢆꢇ ꢄ ꢇ ꢁ ꢆ ꢯ ꢥ ꢄꢩ ꢀꢆ ꢂꢃ ꢐ ꢗꢂ ꢃ ꢥꢽ
DATUM
PLANE
c1
H
A
ꢖꢽ ꢍ ꢂ ꢹꢥꢃ ꢱ ꢂꢇ ꢃ ꢱ ꣄ꢍ ꣄ ꢩ ꢃꢍ ꣄ꢥ ꢊ꣄ ꢍ ꢇ ꢃ ꢇ ꢆ ꢂ ꢃ ꢈꢗ ꢅ ꢍ ꢥ
ꢹꢇ ꢗꢍ ꢄ ꢀ ꢇꢆ ꢀ ꢅ ꢱꢂ ꢇ ꢃ ꢽ ꢩ ꢗꢗꢇ ꢚꢩ ꢔꢗꢥ ꢄ ꢀ ꢇꢆ ꢀ ꢅ ꢱꢂ ꢇ ꢃ
ꢂ ꢱ ꢽ ꢘꢘꢉ ꢄ ꢥꢀ ꢱ ꢂꢍ ꢥ ꢽ ꢍ ꢂ ꢹꢥꢃ ꢱ ꢂ ꢇꢃ ꢱ ꣄ꢍ ꣄ ꢩ ꢃ ꢍ ꣄ꢥ ꢊ꣄ ꢍꢇ
ꢂ ꢃ ꢈꢗ ꢅ ꢍ ꢥ ꢹꢇ ꢗꢍ ꢹꢂ ꢱꢹ ꢩꢆ ꢈ ꢯ ꢩ ꢃ ꢍ ꢩ ꢀ ꢥ
ꢍ ꢥꢆ ꢥ ꢀ ꢹꢂꢃ ꢥ ꢍ ꢩ ꢆ ꢍ ꢩꢆ ꢅ ꢹ ꢄ ꢗꢩꢃ ꢥ ꢝꢯ ꢝꢽ
ꢓꢽ ꢍ ꢂ ꢹꢥꢃ ꢱ ꢂꢇ ꢃ ꣄ ꢊ꣄ ꢍ ꢇ ꢥꢱ ꢃ ꢇ ꢆ ꢂ ꢃ ꢈꢗ ꢅ ꢍ ꢥ ꢍ ꢩꢹ ꢔꢩ ꢀ
ꢄ ꢀꢇ ꢆ ꢀ ꢅ ꢱꢂ ꢇ ꢃ ꢽ ꢩ ꢗꢗꢇ ꢚꢩ ꢔꢗꢥ ꢍ ꢩꢹ ꢔꢩ ꢀ
ꢄ ꢀꢇ ꢆ ꢀ ꢅ ꢱꢂ ꢇ ꢃ ꢱ ꢯꢩ ꢗꢗ ꢔ ꢥ ꢽ ꢘꢘꢓ ꢆꢇ ꢆꢩ ꢗ ꢂ ꢃ ꢥ ꣃꢈ ꢥ ꢱ ꢱ
ꢇ ꢁ ꢆ ꢯ ꢥ ꣄ ꢊ꣄ ꢍ ꢂ ꢹꢥꢃ ꢱ ꢂ ꢇꢃ ꢩ ꢆ ꢹꢩ ꣃꢂ ꢹꢅ ꢹ ꢹꢩꢆ ꢥꢀ ꢂ ꢩꢗ
ꢈ ꢇ ꢃ ꢍ ꢂꢆ ꢂ ꢇꢃ ꢽ
A1
F
ZONE "J"
A2
SEATING
PLANE
C
Y
Y
7
ꢉꢽ ꢍ ꢩꢆ ꢅ ꢹꢱ ꢝꢩ ꢝ ꢩ ꢃꢍ ꢝꢔ ꢝ ꢆꢇ ꢔ ꢥ ꢍ ꢥꢆ ꢥ ꢀ ꢹꢂꢃ ꢥ ꢍ ꢩ ꢆ
ꢍ ꢩꢆ ꢅ ꢹ ꢄ ꢗꢩꢃ ꢥ ꢝꢯ ꢝꢽ
ꢒꢽ ꢍ ꢂ ꢹꢥꢃ ꢱ ꢂ ꢇꢃ ꢩ ꢕ ꢩ ꢄꢄ ꢗꢂ ꢥꢱ ꢚꢂ ꢆꢯ ꢂ ꢃ ꢋ ꢇ ꢃꢥ ꣄ ꣄ ꢇ ꢃ ꢗꢻꢽ
INCHES
DIM MIN MAX
MILLIMETERS
MIN
ꢕꢽ ꢖꢙ
ꢘꢽ ꢙꢉ
ꢊꢽ ꢘꢕ
MAX
ꢕꢽ ꢒꢙ
ꢊꢽ ꢊꢕ
ꢊꢽ ꢘꢒ
ꢕꢑꢽ ꢒꢕ
A
A1
A2
D
ꢽ ꢘꢙꢎ
ꢽ ꢘꢑꢎ
ꢽ ꢘꢖꢘ
ꢽ ꢙꢕꢉ
ꢽ ꢊꢊꢘ
ꢽ ꢘꢖꢖ
ꢽ ꢘꢖꢕ
ꢽ
ꢙ
ꢑ
ꢖ
ꢕ
ꢑ
ꢽ
ꢓ
ꢕ
ꢱ ꢆꢻ ꢗꢥ ꢊꣂ
ꢄ ꢂꢃ ꢊꢽ ꢍ ꢀ ꢩꢂ ꢃ
ꢕꢽ ꢐ ꢩꢆ ꢥ
ꢽ
ꢎ
ꢊ
ꢘ
ꢺ
ꢔ
ꢱ
ꢈ
ꢕ
ꢘ
ꢽ
ꢓ
ꢒ
ꢺ
ꢔ
ꢱ
ꢈ
D1
E
ꢽ ꢖꢑꢎ
ꢽ ꢕꢖꢉ
ꢽ ꢖꢖꢕ
ꢽ ꢕꢓꢖ
ꢊꢊꢽ ꢊꢕ
ꢉꢽ ꢕꢓ
ꢊꢊꢽ ꢕꢑ
ꢉꢽ ꢖꢓ
E1
F
ꢑ
ꢽ
ꢱ
ꢇ
ꢅ
ꢀ
ꢈ
ꢥ
ꢽ
ꢘ
ꢕ
ꢓ
ꢺ
ꢔ
ꢱ
ꢈ
ꢘꢽ ꢉꢖꢺ ꢔ ꢱꢈ
b1
c1
r1
ꢽ ꢊꢙꢑ
ꢽ ꢘꢘꢒ
ꢽ ꢘꢉꢑ
ꢽ ꢊꢙꢙ
ꢽ ꢘꢊꢊ
ꢽ ꢘꢉꢎ
ꢖꢽ ꢙꢘ
ꢽ ꢊꢎ
ꢊꢽ ꢉꢘ
ꢓꢽ ꢘꢓ
ꢽ ꢕꢎ
ꢊꢽ ꢒꢑ
CASE 1337–01
ISSUE O
aaa
ꢽ
ꢘ
ꢘ
ꢖ
ꢽ ꢊꢘ
TO–272 DUAL LEAD
PLASTIC
MRF9060MBR1
MOTOROLA RF DEVICE DATA
MRF9060MR1 MRF9060MBR1
11
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation, or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different
applications and actual performance may vary over time. All operating parameters, including “Typicals”, must be validated for each customer application by
customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended,
or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other
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products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and
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of the part. Motorola and the Stylized M Logo are registered in the US Patent & Trademark Office. All other product or service names are the property of their
respective owners. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
E Motorola, Inc. 2002.
How to reach us:
USA/EUROPE/Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 1–303–675–2140 or 1–800–441–2447
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Technical Information Center: 1–800–521–6274
HOME PAGE: http://www.motorola.com/semiconductors/
◊
MRF9060M/D
相关型号:
![](http://pdffile.icpdf.com/pdf1/p00119/img/page/MRF9060MR1_650711_files/MRF9060MR1_650711_1.jpg)
![](http://pdffile.icpdf.com/pdf1/p00119/img/page/MRF9060MR1_650711_files/MRF9060MR1_650711_2.jpg)
MRF9060MR1
The RF Sub-micron MOSFET Line RF POWER FIELD EFFECT TRANSISTORS N-channel Enhancement-mode Lateral MOSFETs
MOTOROLA
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