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MRF9060LR1_08 [FREESCALE]

RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET; 射频功率场效应晶体管N沟道增强模式横向MOSFET
MRF9060LR1_08
型号： MRF9060LR1_08
厂家： Freescale    Freescale
描述：

RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
射频功率场效应晶体管N沟道增强模式横向MOSFET

晶体 晶体管 功率场效应晶体管 射频
文件： 总11页 (文件大小：364K)
中文：  中文翻译
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Document Number: MRF9060-2  
Rev. 11, 9/2008  
Freescale Semiconductor  
Technical Data  
RF Power Field Effect Transistor  
N-Channel Enhancement-Mode Lateral MOSFET  
Designed for broadband commercial and industrial applications with frequen-  
cies up to 1000 MHz. The high gain and broadband performance of this device  
make it ideal for large-signal, common-source amplifier applications in 26 volt  
base station equipment.  
MRF9060LR1  
• Typical Two-Tone Performance at 945 MHz, 26 Volts  
Output Power — 60 Watts PEP  
Power Gain — 17 dB  
Efficiency — 40%  
945 MHz, 60 W, 26 V  
LATERAL N-CHANNEL  
BROADBAND  
IMD — -31 dBc  
• Capable of Handling 10:1 VSWR, @ 26 Vdc, 945 MHz, 60 Watts CW  
Output Power  
Features  
RF POWER MOSFET  
• Integrated ESD Protection  
• Designed for Maximum Gain and Insertion Phase Flatness  
• Excellent Thermal Stability  
• Characterized with Series Equivalent Large-Signal Impedance Parameters  
• Low Gold Plating Thickness on Leads. L Suffix Indicates 40μ″ Nominal.  
• RoHS Compliant  
• In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel.  
CASE 360B-05, STYLE 1  
NI-360  
Table 1. Maximum Ratings  
Rating  
Symbol  
Value  
Unit  
Vdc  
Vdc  
Drain-Source Voltage  
Gate-Source Voltage  
V
DSS  
- 0.5, +65  
- 0.5, +15  
V
GS  
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
159  
0.91  
W
W/°C  
C
Storage Temperature Range  
Case Operating Temperature  
Operating Junction Temperature  
T
- 65 to +150  
150  
°C  
°C  
°C  
stg  
T
C
T
200  
J
Table 2. Thermal Characteristics  
(1)  
Characteristic  
Symbol  
Value  
Unit  
Thermal Resistance, Junction to Case  
R
1.1  
°C/W  
θ
JC  
Table 3. ESD Protection Characteristics  
Test Conditions  
Class  
Human Body Model  
1 (Minimum)  
M1 (Minimum)  
Machine Model  
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF  
calculators by product.  
© Freescale Semiconductor, Inc., 2008. All rights reserved.  
Table 4. Electrical Characteristics (T = 25°C unless otherwise noted)  
C
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
Off Characteristics  
Zero Gate Voltage Drain Leakage Current  
(V = 65 Vdc, V = 0 Vdc)  
I
I
—
—
—
—
—
—
10  
1
μAdc  
μAdc  
μAdc  
DSS  
DSS  
GSS  
DS  
GS  
Zero Gate Voltage Drain Leakage Current  
(V = 26 Vdc, V = 0 Vdc)  
DS  
GS  
Gate-Source Leakage Current  
I
1
(V = 5 Vdc, V = 0 Vdc)  
GS  
DS  
On Characteristics  
Gate Threshold Voltage  
(V = 10 Vdc, I = 200 μAdc)  
V
V
2
2.9  
3.7  
4
Vdc  
Vdc  
Vdc  
S
GS(th)  
GS(Q)  
DS(on)  
DS  
D
Gate Quiescent Voltage  
(V = 26 Vdc, I = 450 mAdc)  
—
—
—
—
0.4  
—
DS  
D
Drain-Source On-Voltage  
(V = 10 Vdc, I = 1.3 Adc)  
V
0.17  
5.3  
GS  
D
Forward Transconductance  
(V = 10 Vdc, I = 4 Adc)  
g
fs  
DS  
D
Dynamic Characteristics  
Input Capacitance  
(V = 26 Vdc 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)  
DS  
C
—
—
—
98  
50  
2
—
—
—
pF  
pF  
iss  
GS  
Output Capacitance  
(V = 26 Vdc 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)  
DS  
C
oss  
GS  
Reverse Transfer Capacitance  
C
pF  
rss  
(V = 26 Vdc 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)  
DS  
GS  
(continued)  
MRF9060LR1  
RF Device Data  
Freescale Semiconductor  
2
Table 4. Electrical Characteristics (T = 25°C unless otherwise noted) (continued)  
C
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
Functional Tests (In Freescale Test Fixture, 50 ohm system)  
Two-Tone Common-Source Amplifier Power Gain  
G
16  
17  
—
dB  
ps  
(V = 26 Vdc, P = 60 W PEP, I = 450 mA,  
DD  
out  
DQ  
f1 = 945.0 MHz, f2 = 945.1 MHz)  
Two-Tone Drain Efficiency  
η
36  
—
—
—
40  
-31  
-16  
17  
—
-28  
-9  
%
dBc  
dB  
(V = 26 Vdc, P = 60 W PEP, I = 450 mA,  
DD  
out  
DQ  
f1 = 945.0 MHz, f2 = 945.1 MHz)  
3rd Order Intermodulation Distortion  
IMD  
IRL  
(V = 26 Vdc, P = 60 W PEP, I = 450 mA,  
DD  
out  
DQ  
f1 = 945.0 MHz, f2 = 945.1 MHz)  
Input Return Loss  
(V = 26 Vdc, P = 60 W PEP, I = 450 mA,  
DD  
out  
DQ  
f1 = 945.0 MHz, f2 = 945.1 MHz)  
Two-Tone Common-Source Amplifier Power Gain  
G
—
dB  
ps  
(V = 26 Vdc, P = 60 W PEP, I = 450 mA,  
DD  
out  
DQ  
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,  
f2 = 960.1 MHz)  
Two-Tone Drain Efficiency  
η
—
—
—
39  
—
—
—
%
dBc  
dB  
(V = 26 Vdc, P = 60 W PEP, I = 450 mA,  
DD  
out  
DQ  
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,  
f2 = 960.1 MHz)  
3rd Order Intermodulation Distortion  
IMD  
IRL  
-31  
-16  
(V = 26 Vdc, P = 60 W PEP, I = 450 mA,  
DD  
out  
DQ  
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,  
f2 = 960.1 MHz)  
Input Return Loss  
(V = 26 Vdc, P = 60 W PEP, I = 450 mA,  
DD  
out  
DQ  
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,  
f2 = 960.1 MHz)  
Power Output, 1 dB Compression Point  
P
—
—
—
70  
17  
51  
—
—
—
W
dB  
%
1dB  
(V = 26 Vdc, P = 60 W CW, I = 450 mA,  
DD  
out  
DQ  
f1 = 945.0 MHz)  
Common-Source Amplifier Power Gain  
G
ps  
(V = 26 Vdc, P = 60 W CW, I = 450 mA,  
DD  
out  
DQ  
f1 = 945.0 MHz)  
Drain Efficiency  
η
(V = 26 Vdc, P = 60 W CW, I = 450 mA,  
DD  
out  
DQ  
f1 = 945.0 MHz)  
MRF9060LR1  
RF Device Data  
Freescale Semiconductor  
3
B1  
B2  
C13  
V
GG  
V
DD  
+
+
+
+
C6  
Z1  
C7  
C15  
C16  
C17  
L1  
L2  
C4  
C9  
Z11 Z12  
RF  
OUTPUT  
RF  
INPUT  
Z10  
Z13  
Z14  
Z15  
C11  
Z16  
C12  
Z17  
Z2 Z3  
Z4  
Z5 Z6  
Z7  
C3  
Z8  
Z9  
C14  
DUT  
C1  
C8  
C10  
C2  
C5  
Z1  
0.240″ x 0.060″ Microstrip  
0.240″ x 0.060″ Microstrip  
0.500″ x 0.100″ Microstrip  
0.180″ x 0.270″ Microstrip  
0.350″ x 0.270″ Microstrip  
0.270″ x 0.520 x 0.140″ Taper  
0.170″ x 0.520″ Microstrip  
0.410″ x 0.520″ Microstrip  
0.060″ x 0.520″ Microstrip  
Z10  
0.360″ x 0.270″ Microstrip  
0.060″ x 0.270″ Microstrip  
0.110″ x 0.060″ Microstrip  
0.330″ x 0.060″ Microstrip  
0.230″ x 0.060″ Microstrip  
0.740″ x 0.060″ Microstrip  
0.130″ x 0.060″ Microstrip  
0.340″ x 0.060″ Microstrip  
Z2  
Z3  
Z4  
Z5  
Z6  
Z7  
Z8  
Z9  
Z11  
Z12  
Z13  
Z14  
Z15  
Z16  
Z17  
PCB  
Taconic RF-35-0300, 30 mil, ε = 3.55  
r
Figure 1. 945 MHz Broadband Test Circuit Schematic  
Table 5. 945 MHz Broadband Test Circuit Component Designations and Values  
Part  
Description  
Part Number  
2743019447  
Manufacturer  
B1  
B2  
Short Ferrite Bead  
Long Ferrite Bead  
Fair-Rite  
Fair-Rite  
ATC  
2743029446  
C1, C7, C13, C14  
C2, C3, C11  
C4, C5, C8, C9  
C6, C15, C16  
C10  
47 pF Chip Capacitors  
ATC100B470JT500XT  
27291SL  
0.8-8.0 Gigatrim Variable Capacitors  
10 pF Chip Capacitors  
Johanson  
ATC  
ATC100B100JT500XT  
T491D106K035AT  
ATC100B3R0JT500XT  
10 mF, 35 V Tantalum Chip Capacitor  
3.0 pF Chip Capacitor  
Kemet  
ATC  
C12  
0.5 pF Chip Capacitor (MRF9060)  
0.7 pF Chip Capacitor (MRF9060S)  
ATC100B0R5BT500XT  
ATC100B0R7BT500XT  
ATC  
ATC  
C17  
220 mF Electrolytic Chip Capacitor  
MCAX63V227M13X22  
A04T-5  
Multicomp  
Coilcraft  
L1, L2  
12.5 nH Inductors  
MRF9060LR1  
RF Device Data  
Freescale Semiconductor  
4
C6  
C17  
V
DD  
B1  
V
GG  
B2  
C13  
L2  
C7  
L1  
C15 C16  
C4  
WB1  
C5  
C8  
C9  
INPUT  
WB2  
OUTPUT  
C1  
C14  
C2  
C3  
C11  
C10  
C12  
MRF9060  
900 MHz  
Rev−02  
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor  
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have  
no impact on form, fit or function of the current product.  
Figure 2. 930 - 960 MHz Broadband Test Circuit Component Layout  
MRF9060LR1  
RF Device Data  
Freescale Semiconductor  
5
TYPICAL CHARACTERISTICS  
50  
18  
17  
G
ps  
45  
h
40  
16  
15  
14  
13  
12  
V
P
I
= 26 Vdc  
= 60 W (PEP)  
= 450 mA  
DD  
35  
out  
−30  
−32  
−34  
−10  
−12  
−14  
DQ  
IMD  
IRL  
Two−Tone Measurement,  
100 kHz Tone Spacing  
−36  
−38  
−16  
−18  
11  
10  
930  
935  
940  
945  
950  
955  
960  
f, FREQUENCY (MHz)  
Figure 3. Class AB Broadband Circuit Performance  
18  
17.5  
17  
−20  
−25  
−30  
I
= 650 mA  
500 mA  
DQ  
I
= 275 mA  
DQ  
−35  
−40  
−45  
−50  
−55  
−60  
450 mA  
16.5  
16  
500 mA  
450 mA  
275 mA  
650 mA  
V
= 26 Vdc  
f1 = 945 MHz  
V
= 26 Vdc  
f1 = 945 MHz  
DD  
DD  
15.5  
15  
f2 = 945.1 MHz  
f2 = 945.1 MHz  
1
10  
100  
1
10  
, OUTPUT POWER (WATTS) PEP  
100  
P , OUTPUT POWER (WATTS) PEP  
out  
P
out  
Figure 4. Power Gain versus Output Power  
Figure 5. Intermodulation Distortion versus  
Output Power  
0
60  
20  
18  
V
I
= 26 Vdc  
= 450 mA  
DD  
G
ps  
−10  
DQ  
50  
40  
f1 = 945 MHz  
f2 = 945.1 MHz  
−20  
−30  
−40  
−50  
−60  
−70  
16  
14  
h
30  
20  
3rd Order  
12  
10  
V
I
= 26 Vdc  
= 450 mA  
DD  
5th Order  
10  
0
DQ  
7th Order  
f = 945 MHz  
8
10  
, OUTPUT POWER (WATTS) AVG.  
100  
0.1  
1
10  
100  
P , OUTPUT POWER (WATTS) PEP  
out  
P
out  
Figure 6. Intermodulation Distortion Products  
versus Output Power  
Figure 7. Power Gain and Efficiency versus  
Output Power  
MRF9060LR1  
RF Device Data  
Freescale Semiconductor  
6
TYPICAL CHARACTERISTICS  
60  
18  
16  
G
ps  
40  
20  
14  
12  
V
= 26 Vdc  
= 450 mA  
DD  
h
I
DQ  
f1 = 945 MHz  
0
f2 = 945.1 MHz  
−20  
10  
8
−40  
−60  
IMD  
6
1
10  
, OUTPUT POWER (WATTS) PEP  
100  
P
out  
Figure 8. Power Gain, Efficiency, and IMD  
versus Output Power  
MRF9060LR1  
RF Device Data  
Freescale Semiconductor  
7
Z = 5 Ω  
o
Z
load  
Z
source  
f = 960 MHz  
f = 930 MHz  
f = 960 MHz  
f = 930 MHz  
V
DD  
= 26 V, I = 450 mA, P = 60 W PEP  
DQ out  
f
Z
Z
load  
source  
MHz  
Ω
Ω
930  
945  
960  
0.80 - j0.10  
0.80 - j0.05  
0.81 - j0.10  
2.08 - j0.65  
2.07 - j0.38  
2.04 - j0.37  
Z
Z
=
=
Test circuit impedance as measured from  
gate to ground.  
source  
Test circuit impedance as measured  
from drain to ground.  
load  
Output  
Matching  
Network  
Device  
Under Test  
Input  
Matching  
Network  
Z
Z
source  
load  
Figure 9. Series Equivalent Source and Load Impedance  
MRF9060LR1  
RF Device Data  
Freescale Semiconductor  
8
PACKAGE DIMENSIONS  
2X  
Q
M
M
M
B
NOTES:  
1. INTERPRET DIMENSIONS AND TOLERANCES  
PER ASME Y14.5M−1994.  
G
1
aaa  
T
A
B
2. CONTROLLING DIMENSION: INCH.  
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY  
FROM PACKAGE BODY.  
3
INCHES  
DIM MIN MAX  
MILLIMETERS  
B
MIN  
20.19  
5.72  
3.18  
5.33  
1.40  
0.10  
MAX  
20.45  
5.97  
4.45  
5.59  
1.65  
0.15  
2
(FLANGE)  
A
B
0.795  
0.225  
0.125  
0.210  
0.055  
0.004  
0.805  
0.235  
0.175  
0.220  
0.065  
0.006  
2X K  
2X D  
bbb  
C
M
M
M
T
A
B
R
D
(LID)  
E
F
M
M
M
B
ccc  
T
A
G
0.562 BSC  
14.28 BSC  
H
0.077  
0.220  
0.355  
0.357  
0.125  
0.227  
0.225  
0.087  
0.250  
0.365  
0.363  
0.135  
0.233  
0.235  
1.96  
5.59  
9.02  
9.07  
3.18  
5.77  
5.72  
2.21  
6.35  
9.27  
9.22  
3.43  
5.92  
5.97  
F
K
H
M
M
M
B
M
ccc  
T
A
N
N
(LID)  
Q
C
E
R
S
aaa  
bbb  
ccc  
0.005 REF  
0.010 REF  
0.015 REF  
0.13 REF  
0.25 REF  
0.38 REF  
S
(INSULATOR)  
M
M
M
B
aaa  
T
A
SEATING  
PLANE  
T
STYLE 1:  
PIN 1. DRAIN  
2. GATE  
3. SOURCE  
M
M
M
B
bbb  
T
A
M
(INSULATOR)  
A
A
CASE 360B-05  
ISSUE G  
NI-360  
MRF9060LR1  
MRF9060LR1  
RF Device Data  
Freescale Semiconductor  
9
PRODUCT DOCUMENTATION  
Refer to the following documents to aid your design process.  
Application Notes  
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers  
Engineering Bulletins  
• EB212: Using Data Sheet Impedances for RF LDMOS Devices  
REVISION HISTORY  
The following table summarizes revisions to this document.  
Revision  
Date  
Description  
11  
Sept. 2008  
•
•
Data sheet revised to reflect part status change, p. 1, including use of applicable overlay.  
Updated Part Numbers in Table 5, Component Designations and Values, to RoHS compliant part  
numbers, p. 4  
•
Added Product Documentation and Revision History, p. 10  
MRF9060LR1  
RF Device Data  
Freescale Semiconductor  
10  
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Document Number: MRF9060-2  
Rev. 11,9/2008

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MOTOROLA

MRF9060S

 945 MHz, 60 W, 26 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs
MOTOROLA

MRF9060SR1

 945 MHz, 60 W, 26 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs
MOTOROLA

MRF9080

 RF POWER FIELD EFFECT TRANSISTORS
MOTOROLA

MRF9080LR3

 RF Power Field Effect Transistors(N−Channel Enhancement−Mode Lateral MOSFETs)
FREESCALE
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