MRF282SR1 [MOTOROLA]
S BAND, Si, N-CHANNEL, RF POWER, MOSFET, NI-200S, CASE 458B-03, 2 PIN;
| 型号： | MRF282SR1 |
| 厂家： | 
MOTOROLA |
| 描述： | S BAND, Si, N-CHANNEL, RF POWER, MOSFET, NI-200S, CASE 458B-03, 2 PIN 放大器 CD 晶体管 |
| 文件： | 总7页 (文件大小：313K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ꢒ ꢓ ꢎ ꢓꢀ ꢓ ꢔꢕ
SEMICONDUCTOR TECHNICAL DATA
The RF Sub–Micron MOSFET Line
ꢒꢀ ꢁ ꢖꢗꢖꢘꢀ ꢙ
ꢒꢀ ꢁ ꢖꢗꢖ ꢚꢀ ꢙ
ꢀ
ꢁ ꢂ ꢃꢄ ꢅꢆ ꢁꢇꢅ ꢈꢉ ꢊ ꢋꢋ ꢅꢌ ꢍ ꢎꢆ ꢏ ꢐꢑ ꢇꢑ ꢍꢃ ꢆ ꢑ
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for Class A and Class AB PCN and PCS base station applications
with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and
multicarrier amplifier applications.
2000 MHz, 10 W, 26 V
LATERAL N–CHANNEL
BROADBAND
• Specified Two–Tone Performance @ 2000 MHz, 26 Volts
Output Power — 10 Watts PEP
Power Gain — 10.5 dB
RF POWER MOSFETs
Efficiency — 28%
Intermodulation Distortion — –31 dBc
• Specified Single–Tone Performance @ 2000 MHz, 26 Volts
Output Power — 10 Watts CW
Power Gain — 9.5 dB
Efficiency — 35%
• Capable of Handling 10:1 VSWR, @ 26 Vdc,
CASE 458B–03, STYLE 1
(NI–200S)
2000 MHz, 10 Watts CW Output Power
• Excellent Thermal Stability
(MRF282SR1)
• Characterized with Series Equivalent Large–Signal
Impedance Parameters
• Available in Tape and Reel. R1 Suffix = 500 Units per 12 mm, 7 inch Reel.
CASE 458C–03, STYLE 1
(NI–200Z)
(MRF282ZR1)
MAXIMUM RATINGS
Rating
Symbol
Value
65
Unit
Vdc
Vdc
Drain–Source Voltage
Gate–Source Voltage
V
DSS
V
GS
20
Total Device Dissipation @ T = 25°C
Derate above 25°C
P
D
60
0.34
Watts
W/°C
C
Storage Temperature Range
Operating Junction Temperature
T
–65 to +150
200
°C
°C
stg
T
J
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
Symbol
Max
Unit
R
4.2
°C/W
θ
JC
C
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
V
65
—
—
—
—
—
—
Vdc
µAdc
µAdc
(BR)DSS
(V = 0, I = 10 µAdc)
GS
D
Zero Gate Voltage Drain Current
(V = 28 Vdc, V = 0)
I
1.0
1.0
DSS
DS
GS
Gate–Source Leakage Current
(V = 20 Vdc, V = 0)
I
GSS
GS
DS
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 12
MRF282SR1 MRF282ZR1
5–30
MOTOROLA WIRELESS
RF PRODUCT DEVICE DATA
ELECTRICAL CHARACTERISTICS continued (T = 25°C unless otherwise noted)
C
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
Gate Threshold Voltage
V
2.0
—
3.0
0.4
4.0
4.0
0.6
5.0
Vdc
Vdc
Vdc
GS(th)
(V = 10 Vdc, I = 50 µAdc)
DS
D
Drain–Source On–Voltage
(V = 10 Vdc, I = 0.5 Adc)
V
DS(on)
GS
D
Gate Quiescent Voltage
(V = 26 Vdc, I = 75 mAdc)
V
3.0
GS(q)
DS
D
DYNAMIC CHARACTERISTICS
Input Capacitance
(V = 26 Vdc, V = 0, f = 1.0 MHz)
DS
C
—
—
—
15
8.0
—
—
—
pF
pF
pF
iss
GS
Output Capacitance
(V = 26 Vdc, V = 0, f = 1.0 MHz)
C
oss
DS
GS
Reverse Transfer Capacitance
(V = 26 Vdc, V = 0, f = 1.0 MHz)
C
0.45
rss
DS
GS
FUNCTIONAL TESTS (In Motorola Test Fixture)
Common–Source Power Gain
G
10.5
28
11.5
—
—
—
dB
%
ps
(V = 26 Vdc, P = 10 W PEP, I = 75 mA,
DD
out
DQ
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
Drain Efficiency
η
(V = 26 Vdc, P = 10 W PEP, I = 75 mA,
DD
out
DQ
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
Intermodulation Distortion
IMD
IRL
—
–31
–14
11.5
—
–28
–9
dBc
dB
dB
%
(V = 26 Vdc, P = 10 W PEP, I = 75 mA,
DD
out
DQ
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
Input Return Loss
—
(V = 26 Vdc, P = 10 W PEP, I = 75 mA,
DD
out
DQ
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
Common–Source Power Gain
G
10.5
28
—
ps
(V = 26 Vdc, P = 10 W PEP, I = 75 mA,
DD
out
DQ
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
Drain Efficiency
η
—
(V = 26 Vdc, P = 10 W PEP, I = 75 mA,
DD
out
DQ
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
Intermodulation Distortion
IMD
IRL
—
–31
–14
–28
–9
dBc
dB
(V = 26 Vdc, P = 10 W PEP, I = 75 mA,
DD
out
DQ
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
Input Return Loss
—
(V = 26 Vdc, P = 10 W PEP, I = 75 mA,
DD
out
DQ
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
Common–Source Power Gain
G
9.5
35
11.5
40
—
—
dB
%
ps
(V = 26 Vdc, P = 10 W CW, I = 75 mA, f = 2000.0 MHz)
DD
out
DQ
Drain Efficiency
η
(V = 26 Vdc, P = 10 W CW, I = 75 mA, f = 2000.0 MHz)
DD
out
DQ
Output Mismatch Stress
(V = 26 Vdc, P = 10 W CW, I = 75 mA,
f1 = 2000.0 MHz, f2 = 2000.1 MHz, Load VSWR = 10:1,
All Phase Angles at Frequency of Test)
Ψ
DD
out
DQ
No Degradation In Output Power
MOTOROLA WIRELESS
RF PRODUCT DEVICE DATA
MRF282SR1 MRF282ZR1
5–31
ꢀꢕ
ꢔ ꢌ
ꢀ ꢋ
ꢔ ꢉ
ꢀꢌ
ꢔ ꢋ
ꢈꢓ
ꢔ ꢊ
ꢈꢉ ꢋ
ꢒꢉ ꢖ
ꢀ ꢊ
ꢒ ꢕ
ꢐ
ꢑ ꢑ
ꢐ
ꢗ ꢗ
ꢘ
ꢘ
ꢒ ꢌ
ꢒ ꢊ
ꢒꢍ
ꢒꢎ
ꢒ
ꢉ
ꢉ
ꢒ
ꢉ
ꢌ
ꢒꢉ ꢓ
ꢀ ꢉ
ꢒ
ꢉ
ꢎ
ꢀ ꢁ
ꢇꢅ ꢆꢄ ꢅꢆ
ꢈꢉꢉ
ꢈꢉ ꢌ
ꢈꢕ
ꢈꢍ
ꢀ ꢁ
ꢂ ꢃꢄꢅ ꢆ
ꢈꢏ
ꢈꢉ ꢖ
ꢈ
ꢉ
ꢊ
ꢈꢉ ꢕ
ꢈꢉ ꢓ
ꢈ
ꢎ
ꢈ
ꢉ
ꢈ ꢋ
ꢈ
ꢌ
ꢈꢊ
ꢒ
ꢉ
ꢕ
ꢒ ꢓ
ꢒ
ꢉ
ꢍ
ꢒ
ꢉ
ꢋ
ꢒꢉ ꢊ
ꢗꢅ ꢆ
ꢒ
ꢉ
ꢒ ꢋ
ꢒ
ꢏ
Z1
0.491″ x 0.080″ Microstrip
0.253″ x 0.080″ Microstrip
0.632″ x 0.080″ Microstrip
0.567″ x 0.080″ Microstrip
1.139″ x 0.055″ Microstrip
0.236″ x 0.055″ Microstrip
0.180″ x 0.325″ Microstrip
0.301″ x 0.325″ Microstrip
0.439″ x 0.325″ Microstrip
0.055″ x 0.325″ Microstrip
Z11
Z12
Z13
Z14
Z15
Z16
0.636″ x 0.055″ Microstrip
0.303″ x 0.055″ Microstrip
0.463″ x 0.080″ Microstrip
0.105″ x 0.080″ Microstrip
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
Z10
0.452″ 0.085″ x 0.080″ Microstrip
0.910″ 0.085″ x 0.080″ Microstrip
Raw Board
Material
0.030″ Glass Teflon , 2 oz Copper,
3″ x 5″ Dimensions,
Arlon GX0300–55–22, ε = 2.55
r
Figure 1. 1.93 – 2.0 GHz Broadband Test Circuit Schematic
Table 1. 1.93 – 2.0 GHz Broadband Test Circuit Component Designations and Values
Designators
Description
B1, B4
B2, B3
C1, C2, C9
C3
Surface Mount Ferrite Beads, 0.120″ x 0.333″ x 0.100″, Fair Rite #2743019446
Surface Mount Ferrite Beads, 0.120″ x 0.170″ x 0.100″, Fair Rite #2743029446
0.8–8.0 pF Variable Capacitors, Johanson Gigatrim #27291SL
10 mF, 35 V Tantalum Surface Mount Chip Capacitor, Kemet #T495X106K035AS4394
0.1 mF Chip Capacitors, Kemet #CDR33BX104AKWS
200 pF Chip Capacitor, B Case, ATC #100B201JCA500X
18 pF Chip Capacitor, B Case, ATC #100B180KP500X
39 pF Chip Capacitor, B Case, ATC #100B390JCA500X
27 pF Chip Capacitor, B Case, ATC #100B270JCA500X
1.2 pF Chip Capacitor, B Case, ATC #100B1R2CCA500X
0.6–4.5 pF Variable Capacitor, Johanson Gigatrim #27271SL
0.5 pF Chip Capacitor, B Case, ATC #100B0R5BCA500X
15 pF Chip Capacitor, B Case, ATC #100B150JCA500X
0.1 pF Chip Capacitor, B Case, ATC #100B0R1BCA500X
22 mF, 35 V Tantalum Surface Mount Chip Capacitor, Kemet #T491X226K035AS4394
560 kΩ, 1/4 W Chip Resistor, 0.08″ x 0.13″
C4, C5, C13, C16
C6
C7
C8
C10
C11
C12
C14
C15
C17
C18
R1
R2, R5
R3, R4
WS1, WS2
12 Ω, 1/4 W Chip Resistors, 0.08″ x 0.13″, Garrett Instruments #RM73B2B120JT
91 W, 1/4 W Chip Resistors, 0.08″ x 0.13″, Garrett Instruments #RM73B2B910JT
Beryllium Copper Wear Blocks 0.010″ x 0.235″ x 0.135″ NOM
Brass Banana Jack and Nut
Red Banana Jack and Nut
Green Banana Jack and Nut
Type “N” Jack Connectors, Omni–Spectra # 3052–1648–10
4–40 Ph Head Screws, 0.125″ Long
4–40 Ph Head Screws, 0.188″ Long
4–40 Ph Head Screws, 0.312″ Long
4–40 Ph Rec. Hd. Screws, 0.438″ Long
RF Circuit Board
3″ x 5″ Copper Clad PCB, Glass Teflon
MRF282SR1 MRF282ZR1
5–32
MOTOROLA WIRELESS
RF PRODUCT DEVICE DATA
ꢒꢉ ꢎ
ꢒꢉ ꢌ
ꢀꢉ
ꢒ
ꢍ
ꢒ ꢊ
ꢒꢕ
ꢀ ꢋ
ꢔ ꢋ
ꢀꢕ
ꢔ ꢌ
ꢒꢎ
ꢔ
ꢊ
ꢀ ꢌ
ꢀ ꢊ
ꢔ ꢉ
ꢒ
ꢉ
ꢖ
ꢒ
ꢉ
ꢉ
ꢒ
ꢉ
ꢓ
ꢒ
ꢌ
ꢒ
ꢉ
ꢕ
ꢒ
ꢓ
ꢙ
ꢚ
ꢉ
ꢙ
ꢚ
ꢋ
ꢒ
ꢉ
ꢍ
ꢒ
ꢉ
ꢊ
ꢒ
ꢉ
ꢒ
ꢋ
ꢒ
ꢏ
ꢒ
ꢉ
ꢋ
MRF282
Rev–0
D. W. Joersz
Figure 2. 1.93–2.0 GHz Broadband Test Circuit Component Layout
MRF282
Rev–0
D. W. Joersz
ꢛ
ꢚ
ꢜ
ꢝ
ꢞ
ꢟ
ꢉ
ꢠ
ꢉ
ꢡ
Figure 3. MRF282 Test Circuit Photomaster
(Reduced 18% in printed data book, DL110/D)
MOTOROLA WIRELESS
RF PRODUCT DEVICE DATA
MRF282SR1 MRF282ZR1
5–33
ꢀ ꢉ
ꢔ ꢉ
ꢀꢋ
ꢔ ꢋ
ꢀꢌ
ꢔ ꢌ
ꢀꢊ
ꢔ ꢕ
ꢀꢕ
ꢔ ꢊ
ꢀꢓ
ꢔ ꢓ
ꢘ
ꢒ ꢉ
ꢘ
ꢐ
ꢑ ꢑ
ꢐ
ꢗ ꢗ
ꢒ ꢊ
ꢒ ꢍ
ꢒꢕ
ꢒꢎ
ꢒꢉ ꢊ
ꢒꢉꢉ
ꢒ
ꢉ
ꢖ
ꢒ
ꢉ
ꢌ
ꢒꢉ ꢓ
ꢀ ꢁ
ꢇ ꢅ ꢆꢄꢅ ꢆ
ꢀ ꢁ
ꢂ ꢃꢄꢅ ꢆ
ꢢ ꢊ
ꢢ
ꢕ
ꢢꢌ
ꢈꢓ
ꢢ ꢉ
ꢈ ꢋ
ꢢꢋ
ꢗ
ꢅ
ꢆ
ꢈ
ꢎ
ꢈ
ꢏ
ꢈ
ꢉ
ꢖ
ꢈ
ꢉ
ꢉ
ꢈ
ꢉ
ꢈ
ꢌ
ꢈꢊ
ꢒꢌ
ꢈ
ꢕ
ꢈ
ꢍ
ꢒ
ꢓ
ꢒ
ꢉ
ꢕ
ꢒ
ꢉ
ꢍ
ꢒ
ꢉ
ꢋ
ꢒ
ꢏ
ꢒ
ꢋ
Z1
Z2
Z3
Z4
Z5
Z6
Z7
0.122″ x 0.08″ Microstrip
0.650″ x 0.08″ Microstrip
0.160″ x 0.08″ Microstrip
0.030″ x 0.08″ Microstrip
0.045″ x 0.08″ Microstrip
0.291″ x 0.08″ Microstrip
0.483″ x 0.330″ Microstrip
Z8
Z9
0.414″ x 0.330″ Microstrip
0.392″ x 0.08″ Microstrip
0.070″ x 0.08″ Microstrip
Z10
Z11
Raw Board
Material
1.110″ x 0.08″ Microstrip
0.030″ Glass Teflon , 2 oz Copper,
3″ x 5″ Dimensions,
Arlon GX0300–55–22, ε = 2.55
r
Figure 4. 1.81 – 1.88 GHz Broadband Test Circuit Schematic
Table 2. 1.81 – 1.88 GHz Broadband Test Circuit Component Designations and Values
Designators
Description
B1, B2, B3, B4, B5, B6
C1, C16
Surface Mount Ferrite Beads, 0.120″ x 0.170″ x 0.100″, Fair Rite #2743029446
470 µF, 63 V Electrolytic Capacitors, Mallory #SME63UB471M12X25L
0.6–4.5 pF Variable Capacitors, Johanson Gigatrim #27271SL
0.8–8.0 pF Variable Capacitor, Johanson Gigatrim #27291SL
0.1 µF Chip Capacitors, Kemet #CDR33BX104AKWS
C2, C9, C12, C17
C3
C4, C13
C5, C14
100 pF Chip Capacitors, B Case, ATC #100B101JCA500X
12 pF Chip Capacitors, B Case, ATC #100B120JCA500X
1000 pF Chip Capacitors, B Case, ATC #100B102JCA50X
3 Turns, 27 AWG, 0.087″ OD, 0.050″ ID, 0.053″ Long, 6.0 nH
5 Turns, 27 AWG, 0.087″ OD, 0.050″ ID, 0.091″ Long, 15 nH
9 Turns, 26 AWG, 0.080″ OD, 0.046″ ID, 0.170″ Long, 30.8 nH
4 Turns, 27 AWG, 0.087″ OD, 0.050″ ID, 0.078″ Long, 10 nH
12 Ω, 1/8 W Fixed Film Chip Resistors, Garrett Instruments #RM73B2B120JT
0.08″ x 0.13″ Resistors, Garrett Instruments #RM73B2B120JT
Beryllium Copper 0.010″ ꢣ ꢖ ꢤꢉꢉ ꢖ″ ꢣ ꢖ ꢤ ꢋꢉ ꢖ″
C6, C8, C11, C15
C7, C10
L1
L2
L3, L4
L5
R1, R2, R3
R4, R5, R6
W1, W2
MRF282SR1 MRF282ZR1
5–34
MOTOROLA WIRELESS
RF PRODUCT DEVICE DATA
ꢐ
ꢚ ꢅ ꢄ ꢄ ꢢꢥ
ꢘ
ꢒ ꢉ
ꢀ ꢉ
ꢀ ꢋ
ꢀ ꢕ
ꢐ
ꢗ ꢗ
ꢦ ꢉ
ꢦꢋ
ꢀ ꢌ
ꢀ ꢊ
ꢔ ꢋ
ꢀꢏ
ꢔ ꢌ
ꢔ ꢉ
ꢀ ꢎ
ꢀꢓ
ꢐ
ꢗ ꢗ
ꢒꢉ ꢌ
ꢒꢉ ꢊ
ꢘ
ꢘ
ꢀ
ꢍ
ꢒ ꢋ
ꢒꢊ ꢒꢕ
ꢒ
ꢓ
ꢒ
ꢎ
ꢒ
ꢏ
ꢀ
ꢉ
ꢖ
ꢒ
ꢉ
ꢓ
ꢒ
ꢉ
ꢎ
ꢒ
ꢋ
ꢖ
ꢢ
ꢋ
ꢀ ꢁ
ꢇ ꢅ ꢆꢄꢅ ꢆ
ꢢ
ꢉ
ꢗ
ꢅ
ꢆ
ꢀꢁ
ꢂ ꢃꢄ ꢅꢆ
ꢈ
ꢕ
ꢈ
ꢓ
ꢈ
ꢍ
ꢈ
ꢎ
ꢈ
ꢏ
ꢈ
ꢉ
ꢈ
ꢋ
ꢈ
ꢌ
ꢈ
ꢊ
ꢒ
ꢉ
ꢍ
ꢒ
ꢉ
ꢏ
ꢒ
ꢉ
ꢕ
ꢒ
ꢉ
ꢉ
ꢒ
ꢉ
ꢋ
ꢒꢍ
ꢒ ꢌ
ꢒ ꢉꢖ
Z1
Z2
Z3
Z4
Z5
Z6
0.624″ x 0.08″ Microstrip
0.725″ x 0.08″ Microstrip
0.455″ x 0.08″ Microstrip
0.530″ x 0.330″ Microstrip
0.280″ x 0.330″ Microstrip
0.212″ x 0.330″ Microstrip
Z7
Z8
Z9
0.408″ x 0.08″ Microstrip
0.990″ x 0.08″ Microstrip
0.295″ x 0.08″ Microstrip
Raw Board
Material
0.030″ Glass Teflon , 2 oz Copper,
3″ x 5″ Dimensions,
Arlon GX0300–55–22, ε = 2.55
r
Figure 5. Class A Broadband Test Circuit Schematic
Table 3. Class A Broadband Test Circuit Component Designations and Values
Designators
Description
Ferrite Beads, Ferroxcube #56–590–65–3B
B1, B2, B3
C1, C20
C2
470 µF, 63 V Electrolytic Capacitors, Mallory #SME63V471M12X25L
0.01 µF Chip Capacitor, B Case, ATC #100B103JCA50X
0.6–4.5 pF Variable Capacitors, Johanson #27271SL
0.02 µF Chip Capacitors, B Case, ATC #100B203JCA50X
100 µF, 50 V Electrolytic Capacitor, Mallory #SME50VB101M12X256
12 pF Chip Capacitors, B Case, ATC #100B120JCA500X
51 pF Chip Capacitors, B Case, ATC #100B510JCA500X
0.3 pF Chip Capacitors, B Case, ATC #100B0R3CCA500X
0.1 µF Chip Capacitor, Kemet #CDR33BX104AKWS
0.4–2.5 pF Variable Capacitor, Johanson #27285
8 Turns, 0.042″ ID, 24 AWG, Enamel
C3, C10, C15
C4, C16
C5
C6, C7, C9, C14, C17
C8, C13
C11, C12
C18
C19
L1
L2
9 Turns, 0.046″ ID, 26 AWG, Enamel
Q1
NPN, 15 W, Bipolar Transistor, MJD310
Q2
PNP, 15 W, Bipolar Transistor, MJD320
R1
200 Ω, 1/4 W Axial Resistor
R2
1.0 kΩ, 1/2 W Potentiometer, Bourns
R3
13 ꢧΩ, 1/4 W Axial Resistor
R4, R6, R7
R5
390 Ω, 1/8 W Chip Resistors, Garrett Instruments #RM73B2B391JT
1.0 Ω, 10 W 1% Resistor, Dale #RE65G1R00
R8, R9, R10
Input/Output
12 Ω, 1/8 W Chip Resistors, Garrett Instruments #RM73B2B120JT
Type N Flange Mount RF55–22 Connectors, Omni–Spectra
MOTOROLA WIRELESS
RF PRODUCT DEVICE DATA
MRF282SR1 MRF282ZR1
5–35
ꢈ ꢨ ꢕ Ω
ꢬ
ꢋ ꢤꢖ ꢑ ꢴꢵ
ꢈ
ꢱ ꢲ
ꢳ ꢨ ꢉ ꢤꢎ ꢑ ꢴꢵ
ꢈ
ꢰ
ꢇ ꢢ
ꢋ ꢤꢖ ꢑ ꢴꢵ
ꢳ ꢨ ꢉ ꢤ ꢎ ꢑ ꢴꢵ
ꢐ
ꢗ ꢗ
ꢨ ꢋꢓ ꢐ ꢩ ꢂ ꢨ ꢍ ꢕ ꢪꢫ ꢩ ꢄ ꢨ ꢉ ꢖ ꢙ ꢛꢄ ꢯ ꢄ ꢡ
ꢗ ꢦ ꢬ ꢭ ꢮ
f
Z
in
Z
OL
*
MHz
Ω
Ω
1800
1860
1900
1960
2000
2.1 + j1.0
2.05 + j1.15
2.0 + j1.2
3.8 – j0.15
3.77 – j0.13
3.75 – j0.1
3.65 + j0.1
3.55 + j0.2
1.9 + j1.4
1.85 + j1.6
Z
Z
= Complex conjugate of source impedance.
* = Complex conjugate of the optimum load
in
OL
impedance at given output power, voltage, IMD,
bias current and frequency.
ꢇ ꢭ ꢮꢶ ꢭ ꢮ
ꢗꢟ ꢼꢱꢜꢟ
ꢂ ꢲꢶꢭ ꢮ
ꢷ ꢝꢮ ꢜꢸꢱ ꢲꢹ
ꢃꢟ ꢮ ꢺꢬꢻ ꢧ
ꢷꢝ ꢮ ꢜꢸ ꢱꢲ ꢹ
ꢃꢟ ꢮ ꢺꢬ ꢻꢧ
ꢅꢲ ꢽ ꢟꢻ ꢆꢟ ꢾꢮ
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Figure 6. Series Equivalent Input and Output Impedence
MRF282SR1 MRF282ZR1
5–36
MOTOROLA WIRELESS
RF PRODUCT DEVICE DATA
相关型号：
MRF284LR1
S BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, NI-360, CASE 360B-05, 2 PIN
ROCHESTER
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