MRF284LSR1 [MOTOROLA]

S BAND, Si, N-CHANNEL, RF POWER, MOSFET, NI-360S, CASE 360C-05, 2 PIN;


型号：	MRF284LSR1
厂家：	MOTOROLA
描述：	S BAND, Si, N-CHANNEL, RF POWER, MOSFET, NI-360S, CASE 360C-05, 2 PIN 放大器 CD 晶体管
文件：	总12页 (文件大小：395K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document

by MRF284/D

The RF Sub-Micron MOSFET Line

RF Power Field Effect Transistors

N-Channel Enhancement-Mode Lateral MOSFETs

MRF284LR1

MRF284LSR1

Designed for PCN and PCS base station applications with frequencies from

1000 to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier

applications. To be used in Class A and Class AB for PCN-PCS/cellular radio

and wireless local loop.

2000 MHz, 30 W, 26 V

LATERAL N-CHANNEL

BROADBAND

• Specified Two-Tone Performance @ 2000 MHz, 26 Volts

Output Power = 30 Watts PEP

Power Gain = 9 dB

RF POWER MOSFETs

Efficiency = 30%

Intermodulation Distortion = -29 dBc

• Typical Single-Tone Performance at 2000 MHz, 26 Volts

Output Power = 30 Watts CW

Power Gain = 9.5 dB

Efficiency = 45%

CASE 360B-05, STYLE 1

NI-360

• Capable of Handling 10:1 VSWR, @ 26 Vdc, 2000 MHz, 30 Watts CW

Output Power

MRF284LR1

• Excellent Thermal Stability

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel.

• Low Gold Plating Thickness on Leads. L Suffix Indicates 40µ″ Nominal.

CASE 360C-05, STYLE 1

NI-360S

MRF284LSR1

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Drain-Source Voltage

Gate-Source Voltage

Vdc

DSS

Total Device Dissipation @ T = 25°C

Derate above 25°C

87.5

0.5

Watts

W/°C

Storage Temperature Range

Operating Junction Temperature

THERMAL CHARACTERISTICS

- 65 to +150

200

°C

stg

Characteristic

Thermal Resistance, Junction to Case

Symbol

Max

Unit

2.0

°C/W

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

(V = 0, I = 10 µAdc)

—

1.0

Vdc

µAdc

(BR)DSS

Zero Gate Voltage Drain Current

(V = 20 Vdc, V = 0)

DSS

GSS

Gate-Source Leakage Current

(V = 20 Vdc, V = 0)

NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

REV 14

MOTOROLA RF DEVICE DATA

MRF284LR1 MRF284LSR1

 Motorola, Inc. 2003

ELECTRICAL CHARACTERISTICS — continued (T = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

ON CHARACTERISTICS

Gate Threshold Voltage

2.0

3.0

—

3.0

4.0

0.3

1.5

4.0

5.0

0.6

—

Vdc

GS(th)

(V = 10 Vdc, I = 150 µAdc)

Gate Quiescent Voltage

(V = 26 Vdc, I = 200 mAdc)

GS(q)

Drain-Source On-Voltage

(V = 10 Vdc, I = 1.0 Adc)

DS(on)

Forward Transconductance

(V = 10 Vdc, I = 1.0 Adc)

—

DYNAMIC CHARACTERISTICS

Input Capacitance

(V = 26 Vdc, V = 0, f = 1.0 MHz)

—

iss

Output Capacitance

(V = 26 Vdc, V = 0, f = 1.0 MHz)

oss

Reverse Transfer Capacitance

(V = 26 Vdc, V = 0, f = 1.0 MHz)

rss

1.4

FUNCTIONAL TESTS (in Motorola Test Fixture, 50 ohm system)

Common-Source Power Gain

—

10.5

—

-29

-9

—

-9

—

(V = 26 Vdc, P = 30 W, I = 200 mA,

out

f1 = 2000.0 MHz, f2 = 2000.1 MHz)

Drain Efficiency

(V = 26 Vdc, P = 30 W, I = 200 mA,

out

f1 = 2000.0 MHz, f2 = 2000.1 MHz)

Intermodulation Distortion

IMD

IRL

-32

-15

10.4

dBc

(V = 26 Vdc, P = 30 W, I = 200 mA,

out

f1 = 2000.0 MHz, f2 = 2000.1 MHz)

Input Return Loss

(V = 26 Vdc, P = 30 W, I = 200 mA,

out

f1 = 2000.0 MHz, f2 = 2000.1 MHz)

Common-Source Amplifier Power Gain

(V = 26 Vdc, P = 30 W PEP, I

= 200 mA,

out

f1 = 1930.0 MHz, f2 = 1930.1 MHz)

Drain Efficiency

—

8.5

(V = 26 Vdc, P = 30 W PEP, I

out

f1 = 1930.0 MHz, f2 = 1930.1 MHz)

Intermodulation Distortion

IMD

IRL

-34

-15

9.5

dBc

(V = 26 Vdc, P = 30 W PEP, I

out

f1 = 1930.0 MHz, f2 = 1930.1 MHz)

Input Return Loss

(V = 26 Vdc, P = 30 W PEP, I

out

f1 = 1930.0 MHz, f2 = 1930.1 MHz)

Common-Source Amplifier Power Gain

(V = 26 Vdc, P = 30 W CW, I

out

f1 = 2000.0 MHz)

Drain Efficiency

(V = 26 Vdc, P = 30 W CW, I

out

f1 = 2000.0 MHz)

Output Mismatch Stress

(V = 26 Vdc, P = 30 W CW, I

out

No Degradation In Output Power

f1 = 2000.0 MHz, VSWR = 10:1,

at All Phase Angles)

MRF284LR1 MRF284LSR1

MOTOROLA RF DEVICE DATA

C15

C13

C12

C14

C17

C18

OUTPUT

C10

Z11 Z12

Z10

Z13

C11

Z14 Z15

Z16

Z17

INPUT

DUT

C16

0.530″ x 0.080″ Microstrip

0.255″ x 0.080″ Microstrip

0.600″ x 0.080″ Microstrip

0.525″ x 0.080″ Microstrip

0.015″ x 0.325″ Microstrip

0.085″ x 0.325″ Microstrip

0.165″ x 0.325″ Microstrip

0.110″ x 0.515″ Microstrip

0.095″ x 0.515″ Microstrip

0.050″ x 0.515″ Microstrip

Z11

Z12

Z13

Z14

Z15

Z16

Z17

PCB

0.155″ x 0.515″ Microstrip

0.120″ x 0.325″ Microstrip

0.150″ x 0.325″ Microstrip

0.010″ x 0.325″ Microstrip

0.505″ x 0.080″ Microstrip

0.865″ x 0.080″ Microstrip

0.525″ x 0.080″ Microstrip

Arlon GX0300-55-22, 0.030″,

ε = 2.55

Z10

Figure 1. 1.93-2.0 GHz Broadband Test Circuit Schematic

Table 1. 1.93 - 2.0 GHz Broadband Test Circuit Component Designations and Values

Designators

Description

Ferrite Beads, Round, Ferroxcube #56-590-65-3B

0.8-8.0 pF Gigatrim Variable Capacitors, Johanson #27291SL

B1 - B3

C1, C2, C8

C3, C17

C4, C14

22 mF, 35 V Tantalum Surface Mount Chip Capacitors, Kemet #T491X226K035AS4394

0.1 mF Chip Capacitors, Kemet #CDR33BX104AKWS

220 pF Chip Capacitor, B Case, ATC #100B221KP500X

C6, C12

C7, C13

1000 pF Chip Capacitors, B Case, ATC #100B102JCA50X

5.1 pF Chip Capacitors, B Case, ATC #100B5R1CCA500X

1.2 pF Chip Capacitor, B Case, ATC #100B1R2CCA500X

2.7 pF Chip Capacitor, B Case, ATC #100B2R7CCA500X

0.6-4.5 pF Gigatrim Variable Capacitors, Johanson #27271SL

200 pF Chip Capacitors, B Case, ATC #100B201KP500X

10 mF, 35 V Tantalum Surface Mount Chip Capacitor, Kemet #T495X106K035AS4394

4 Turns, #24 AWG, 0.120″ OD, 0.140″ Long, (12.5 nH), Coilcraft #A04T-5

2 Turns, #24 AWG, 0.120″ OD, 0.140″ Long, (5.0 nH), Coilcraft #A02T-5

12 Ω, 1/4 W Chip Resistors, 0.08″ x 0.13″, Garrett Instruments #RM73B2B120JT

560 kΩ, 1/4 W Chip Resistor, 0.08″ x 0.13″

C10

C11

C15, C16

C18

L1, L2

R1, R2, R3, R5, R6, R7

W1, W2, W3

WS1, WS2

Solid Copper Buss Wire, 16 AWG

Beryllium Copper Wear Blocks 0.005″ x 0.250″ x 0.250″

MOTOROLA RF DEVICE DATA

MRF284LR1 MRF284LSR1

C12

C14

C17

C18

C13

C15

C10

WS2

C16

WS1

C11

MRF284

Rev-0

Figure 2. 1.93-2.0 GHz Broadband Test Circuit Component Layout

MRF284

Rev-0

(Scale 1:1)

Figure 3. MRF284 Test Circuit Photomaster

(Reduced 18% in printed data book, DL110/D)

MRF284LR1 MRF284LSR1

MOTOROLA RF DEVICE DATA

SUPPLY

R10

C11 C13

C10

C15 C16

C9 C7

C2 C4

OUTPUT

Z10 Z11

Z12

Z13 Z14

Z15

Z16

INPUT

DUT

C14

Z4 Z5

C12

C17

0.363″ x 0.080″ Microstrip

0.080″ x 0.080″ Microstrip

0.916″ x 0.080″ Microstrip

0.517″ x 0.080″ Microstrip

0.050″ x 0.325″ Microstrip

0.071″ x 0.325″ Microstrip

0.125″ x 0.325″ Microstrip

0.210″ x 0.515″ Microstrip

Z10

Z11

Z12

Z13

Z14

Z15

Z16

PCB

0.210″ x 0.515″ Microstrip

0.235″ x 0.325″ Microstrip

0.02″ x 0.325″ Microstrip

0.510″ x 0.080″ Microstrip

0.990″ x 0.080″ Microstrip

0.390″ x 0.080″ Microstrip

Arlon GX0300-55-22, 0.030″,

ε = 2.55

Figure 4. 2.0 GHz Class A Test Circuit Schematic

MOTOROLA RF DEVICE DATA

MRF284LR1 MRF284LSR1

Table 2. 2.0 GHz Class A Test Circuit Component Designations and Values

Designators

Description

B1 - B5

C1, C9, C16

C2, C13

C3, C14

C4, C11

Ferrite Beads, Round, Ferroxcube # 56-590-65-3B

100 µF, 50 V Electrolytic Capacitors, Mallory #SME50VB101M12X25L

51 pF Chip Capacitors, B Case, ATC #100B510JCA500x

10 pF Chip Capacitors, B Case, ATC #100B100JCA500X

12 pF Chip Capacitors, B Case, ATC #100B120JCA500X

0.8 - 8.0 pF Variable Capacitor, Johansen Gigatrim #27291SL

4.7 pF Chip Capacitor, B Case, ATC #100B4R7CCA500X

C7, C15

91 pF Chip Capacitors, B Case, ATC #100B910KP500X

1000 pF Chip Capacitor, B Case, ATC #100B102JCA50X

C10

0.1 µF Chip Capacitor, Kemet #CDR33BX104AKWS

C12, C17

0.6 - 4.5 pF Variable Capacitors, Johansen Gigatrim #27271SL

4 Turns, #27 AWG, 0.087″ OD, 0.050″ ID, 0.069″ Long, 10 nH

5 Turns, #24 AWG, 0.083″ OD, 0.040″ ID, 0.128″ Long, 12.5 nH

9 Turns, #26 AWG, 0.080″ OD, 0.046″ ID, 0.170″ Long, 30.8 nH

1000 Ω Potentiometer, 1/2 W, 10 Turns, Bourns

L3, L4

Transistor, NPN, Motorola P/N: MJD31, Case 369A-10

Transistor, PNP, Motorola P/N: MJD32, Case 369A-10

360 Ω, Fixed Film Chip Resistor, 0.08″ x 0.13″, Garrett Instruments #RM73B2B361JT

2 x 12 kΩ, Fixed Film Chip Resistor, 0.08″ x 0.13″, Garrett Instruments #RM73B2B122JT

1 Ω, Wirewound, 5 W, 3% Resistor, Dale # RE60G1R00

4 x 6.8 kΩ, Fixed Film Chip Resistor, 0.08″ x 0.13″, Garrett Instruments #RM73B2B682JT

2 x 1500 Ω, Fixed Film Chip Resistor, 0.08″ x 0.13″, Garrett Instruments #RM73B2B152JT

270 Ω, Fixed Film Chip Resistor, 0.08″ x 0.13″, Garrett Instruments #RM73B2B271JT

12 Ω, Fixed Film Chip Resistors, 0.08″ x 0.13″, Garrett Instruments #RM73B2B120JT

R7 - R11

MRF284LR1 MRF284LSR1

MOTOROLA RF DEVICE DATA

TYPICAL CHARACTERISTICS

4 W

3 W

out

2 W

= 1 W

= 26 Vdc

= 200 mA

= 26 Vdc

= 200 mA

f = 2000 MHz Single Tone

1.5 2.0 2.5

P , INPUT POWER (WATTS)

Single Tone

4.0

0.5

1.0

3.0

3.5

1800 1820 1840 1860 1880 1900 1920 1940 1960 1980 2000

f, FREQUENCY (MHz)

Figure 5. Output Power & Power Gain

versus Input Power

Figure 6. Output Power versus Frequency

−10

−ꢀ20

−ꢀ30

−ꢀ40

−ꢀ50

−ꢀ60

−ꢀ70

−ꢀ80

= 26 Vdc

= 200 mA

f = 2000.0 MHz

−15

−20

f = 2000.1 MHz

3rd Order

5th Order

−25

−30

= 30 W (PEP)

= 200 mA

out

7th Order

IMD −35

f1 = 2000.0 MHz

f2 = 2000.1 MHz

−40

0.1

1.0

V , DRAIN SUPPLY VOLTAGE (Vdc)

, OUTPUT POWER (WATTS) PEP

out

Figure 7. Intermodulation Distortion Products

versus Output Power

Figure 8. Power Gain and Intermodulation

Distortion versus Supply Voltage

−ꢀ20

−ꢀ30

−ꢀ40

−ꢀ50

−ꢀ60

= 26 Vdc

f = 2000.0 MHz

= 400 mA

f = 2000.1 MHz

300 mA

100 mA

300 mA

200 mA

= 26 Vdc

f = 2000.0 MHz

100 mA

= 400 mA

f = 2000.1 MHz

0.1

1.0

, OUTPUT POWER (WATTS) PEP

out

P , OUTPUT POWER (WATTS) PEP

out

Figure 9. Intermodulation Distortion

versus Output Power

Figure 10. Power Gain versus Output Power

MOTOROLA RF DEVICE DATA

MRF284LR1 MRF284LSR1

TYPICAL CHARACTERISTICS

100

= 75°C

flange

iss

= 100°C

flange

oss

T = 175°C

rss

V , DRAIN SOURCE VOLTAGE (VOLTS)

, DRAIN SUPPLY VOLTAGE (Vdc)

Figure 11. DC Safe Operating Area

Figure 12. Capacitance versus

Drain Source Voltage

FUNDAMENTAL

= 26 Vdc

out

= 30 W (PEP), I = 200 mA

−10

−ꢁ20

−ꢁ30

−ꢀ40

−ꢀ50

−ꢁ60

−70

−ꢁ80

−ꢁ90

3rd Order

Two−Tone

Frequency Delta = 100 kHz

3.0

2.0

−32

IMD

= 26 Vdc

= 1.8 Adc

−36

−40

f = 2000.0 MHz

VSWR

f = 2000.1 MHz

1.0

10 15 20 25 30 35 40 45 50 55 60

P , INPUT POWER (dBm)

1920

1940

1960

1980

2000

f, FREQUENCY (MHz)

Figure 13. Class A Third Order Intercept Point

Figure 14. 1.92-2.0 GHz Broadband Circuit Performance

1.E+10

1.E+09

1.E+08

1.E+07

1.E+06

1.E+05

1.E+04

100

150

200

250

T , JUNCTION TEMPERATURE (°C)

This graph displays calculated MTBF in hours x ampere drain current.

Life tests at elevated temperature have correlated to better than 10%

of the theoretical prediction for metal failure. Divide MTBF factor by I

for MTBF in a particular application.

Figure 15. MTBF Factor versus Junction Temperature

MRF284LR1 MRF284LSR1

MOTOROLA RF DEVICE DATA

1800 MHz

load

f = 2000 MHz

source

Z = 5 Ω

f = 2000 MHz

= 26 V, I = 200 mA, P = 15 W Avg.

DQ out

load

source

MHz

Ω

1800

1860

1900

1960

2000

1.0 - j0.4

1.0 - j0.8

1.0 - j1.1

1.0 - j1.4

1.0 - j2.3

2.1 + j0.4

2.2 - j0.2

2.3 - j0.5

2.5 - j0.9

2.6 - j0.92

Test circuit impedance as measured from

gate to ground.

source

load

Test circuit impedance as measured

from drain to ground.

Output

Matching

Network

Device

Under

Test

Input

Matching

Network

source

load

Figure 16. Series Equivalent Input and Output Impedence

MOTOROLA RF DEVICE DATA

MRF284LR1 MRF284LSR1

NOTES

MRF284LR1 MRF284LSR1

MOTOROLA RF DEVICE DATA

PACKAGE DIMENSIONS

NOTES:

1. INTERPRET DIMENSIONS AND TOLERANCES

PER ASME Y14.5M−1994.

aaa

T A

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY

FROM PACKAGE BODY.

INCHES

DIM MIN MAX

0.805 20.19

MILLIMETERS

MIN

MAX

20.45

5.97

4.45

5.59

1.65

0.15

(FLANGE)

0.795

0.225

0.125

0.210

0.055

0.004

2X K

0.235

0.175

0.220

0.065

0.006

5.72

3.18

5.33

1.40

0.10

2X D

bbb

T A

(LID)

ccc

T A

0.562 BSC

14.28 BSC

0.077

0.220

0.355

0.357

0.125

0.227

0.225

0.087

0.250

0.365

0.363

0.135

0.233

0.235

1.96

5.59

9.02

9.07

3.18

5.77

5.72

2.21

6.35

9.27

9.22

3.43

5.92

5.97

ccc

T A

(LID)

aaa

bbb

ccc

0.005 REF

0.010 REF

0.015 REF

0.13 REF

0.25 REF

0.38 REF

(INSULATOR)

aaa

T A

SEATING

PLANE

STYLE 1:

PIN 1. DRAIN

2. GATE

3. SOURCE

bbb

T A

(INSULATOR)

CASE 360B-05

ISSUE F

NI-360

MRF284LR1

(FLANGE)

NOTES:

1. INTERPRET DIMENSIONS AND TOLERANCES

PER ASME Y14.5M−1994.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY

FROM PACKAGE BODY.

2X K

(FLANGE)

2X D

bbb

T A

INCHES

DIM MIN MAX

MILLIMETERS

MIN

9.53

5.72

2.67

5.33

0.89

0.10

1.45

2.16

9.02

9.07

5.77

5.72

MAX

9.78

5.97

3.94

5.59

1.14

0.15

1.70

2.92

9.27

9.22

5.92

5.97

(LID)

0.375

0.225

0.105

0.210

0.035

0.004

0.057

0.085

0.355

0.357

0.227

0.225

0.385

0.235

0.155

0.220

0.045

0.006

0.067

0.115

0.365

0.363

0.23

ccc

T A

(LID)

ccc

T A

(INSULATOR)

0.235

aaa

bbb

ccc

0.005 REF

0.010 REF

0.015 REF

0.13 REF

0.25 REF

0.38 REF

aaa

T A

SEATING

PLANE

PIN 3

(INSULATOR)

STYLE 1:

bbb

T A

PIN 1. DRAIN

2. GATE

3. SOURCE

CASE 360C-05

ISSUE D

NI-360S

MRF284LSR1

MOTOROLA RF DEVICE DATA

MRF284LR1 MRF284LSR1

Information in this document is provided solely to enable system and software implementers to use Motorola products. There are no express or implied copyright

licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document.

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding

the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and

specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in Motorola

data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including

“Typicals”, must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the

rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other

applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury

or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola

and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees

arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that

Motorola was negligent regarding the design or manufacture of the part.

MOTOROLA and the Stylized M Logo are registered in the US Patent and Trademark Office. All other product or service names are the property of their respective

owners. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

E Motorola Inc. 2003

HOW TO REACH US:

USA/EUROPE/LOCATIONS NOT LISTED:

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81-3-3440-3569

ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre,

2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong

852-26668334

HOME PAGE: http://motorola.com/semiconductors

MRF284LR1 MRF284LSR1

MOTOROLA RF DEVICE DAMTRAF284/D

◊

MRF284LSR1 [MOTOROLA]

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