MRF284R1 [MOTOROLA]

S BAND, Si, N-CHANNEL, RF POWER, MOSFET, NI-360, CASE 360B-05, 3 PIN;
MRF284R1
型号: MRF284R1
厂家: MOTOROLA    MOTOROLA
描述:

S BAND, Si, N-CHANNEL, RF POWER, MOSFET, NI-360, CASE 360B-05, 3 PIN

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ꢒ ꢓꢎ ꢓ ꢀꢓ ꢔꢕ  
SEMICONDUCTOR TECHNICAL DATA  
Order this document  
by MRF284/D  
The RF Sub–Micron MOSFET Line  
ꢀ ꢁ ꢂ ꢃꢄꢅ ꢆ ꢁꢇꢅ ꢈꢉ ꢊ ꢋꢋ ꢅ ꢌꢍ ꢎꢆ ꢏꢐ ꢑ ꢇꢑ ꢍꢃ ꢆ ꢑ  
N–Channel Enhancement–Mode Lateral MOSFETs  
Designed for PCN and PCS base station applications with frequencies from  
1000 to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier  
applications. To be used in Class A and Class AB for PCN–PCS/cellular radio  
and wireless local loop.  
2000 MHz, 30 W, 26 V  
LATERAL N–CHANNEL  
BROADBAND  
Specified Two–Tone Performance @ 2000 MHz, 26 Volts  
Output Power = 30 Watts PEP  
Power Gain = 9 dB  
RF POWER MOSFETs  
Efficiency = 30%  
Intermodulation Distortion = –29 dBc  
Typical Single–Tone Performance at 2000 MHz, 26 Volts  
Output Power = 30 Watts CW  
Power Gain = 9.5 dB  
Efficiency = 45%  
CASE 360B–05, STYLE 1  
NI–360  
Capable of Handling 10:1 VSWR, @ 26 Vdc, 2000 MHz, 30 Watts CW  
Output Power  
MRF284R1  
Excellent Thermal Stability  
Characterized with Series Equivalent Large–Signal Impedance Parameters  
In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel.  
Available with Low Gold Plating Thickness on Leads. L Suffix Indicates  
40µ″ Nominal.  
CASE 360C–05, STYLE 1  
NI–360S  
MRF284LSR1  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
65  
Unit  
Vdc  
Vdc  
Drain–Source Voltage  
Gate–Source Voltage  
V
DSS  
V
GS  
20  
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
87.5  
0.5  
Watts  
W/°C  
C
Storage Temperature Range  
Operating Junction Temperature  
T
–65 to +150  
200  
°C  
°C  
stg  
T
J
THERMAL CHARACTERISTICS  
Characteristic  
Thermal Resistance, Junction to Case  
Symbol  
Max  
Unit  
R
2.0  
°C/W  
θ
JC  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
C
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
Drain–Source Breakdown Voltage  
V
65  
1.0  
10  
Vdc  
µAdc  
µAdc  
(BR)DSS  
(V = 0, I = 10 µAdc)  
GS  
D
Zero Gate Voltage Drain Current  
(V = 20 Vdc, V = 0)  
I
DSS  
DS  
GS  
Gate–Source Leakage Current  
(V = 20 Vdc, V = 0)  
I
GSS  
GS  
DS  
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and  
packaging MOS devices should be observed.  
REV 13  
Motorola, Inc. 2003  
ELECTRICAL CHARACTERISTICS — continued (T = 25°C unless otherwise noted)  
C
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
ON CHARACTERISTICS  
Gate Threshold Voltage  
V
2.0  
3.0  
3.0  
4.0  
0.3  
1.5  
4.0  
5.0  
0.6  
Vdc  
Vdc  
Vdc  
S
GS(th)  
(V = 10 Vdc, I = 150 µAdc)  
DS  
D
Gate Quiescent Voltage  
(V = 26 Vdc, I = 200 mAdc)  
V
GS(q)  
DS  
D
Drain–Source On–Voltage  
(V = 10 Vdc, I = 1.0 Adc)  
V
DS(on)  
GS  
D
Forward Transconductance  
(V = 10 Vdc, I = 1.0 Adc)  
g
fs  
DS  
D
DYNAMIC CHARACTERISTICS  
Input Capacitance  
(V = 26 Vdc, V = 0, f = 1.0 MHz)  
DS  
C
43  
23  
pF  
pF  
pF  
iss  
GS  
Output Capacitance  
(V = 26 Vdc, V = 0, f = 1.0 MHz)  
C
oss  
DS  
GS  
Reverse Transfer Capacitance  
(V = 26 Vdc, V = 0, f = 1.0 MHz)  
C
1.4  
rss  
DS  
GS  
FUNCTIONAL TESTS (in Motorola Test Fixture, 50 ohm system)  
Common–Source Power Gain  
G
9
30  
9
10.5  
35  
dB  
%
ps  
(V = 26 Vdc, P = 30 W, I = 200 mA,  
DD  
out  
DQ  
f1 = 2000.0 MHz, f2 = 2000.1 MHz)  
Drain Efficiency  
η
(V = 26 Vdc, P = 30 W, I = 200 mA,  
DD  
out  
DQ  
f1 = 2000.0 MHz, f2 = 2000.1 MHz)  
Intermodulation Distortion  
IMD  
IRL  
–32  
–15  
10.4  
35  
–29  
–9  
dBc  
dB  
dB  
%
(V = 26 Vdc, P = 30 W, I = 200 mA,  
DD  
out  
DQ  
f1 = 2000.0 MHz, f2 = 2000.1 MHz)  
Input Return Loss  
(V = 26 Vdc, P = 30 W, I = 200 mA,  
DD  
out  
DQ  
f1 = 2000.0 MHz, f2 = 2000.1 MHz)  
Common–Source Amplifier Power Gain  
G
ps  
(V = 26 Vdc, P = 30 W PEP, I = 200 mA,  
DD  
out  
DQ  
f1 = 1930.0 MHz, f2 = 1930.1 MHz)  
Drain Efficiency  
η
8.5  
35  
(V = 26 Vdc, P = 30 W PEP, I = 200 mA,  
DD  
out  
DQ  
f1 = 1930.0 MHz, f2 = 1930.1 MHz)  
Intermodulation Distortion  
IMD  
IRL  
–34  
–15  
9.5  
45  
dBc  
dB  
dB  
%
(V = 26 Vdc, P = 30 W PEP, I = 200 mA,  
DD  
out  
DQ  
f1 = 1930.0 MHz, f2 = 1930.1 MHz)  
Input Return Loss  
–9  
(V = 26 Vdc, P = 30 W PEP, I = 200 mA,  
DD  
out  
DQ  
f1 = 1930.0 MHz, f2 = 1930.1 MHz)  
Common–Source Amplifier Power Gain  
G
ps  
(V = 26 Vdc, P = 30 W CW, I = 200 mA,  
DD  
out  
DQ  
f1 = 2000.0 MHz)  
Drain Efficiency  
η
(V = 26 Vdc, P = 30 W CW, I = 200 mA,  
DD  
out  
DQ  
f1 = 2000.0 MHz)  
Output Mismatch Stress  
(V = 26 Vdc, P = 30 W CW, I = 200 mA,  
f1 = 2000.0 MHz, VSWR = 10:1,  
at All Phase Angles)  
Ψ
DD  
out  
DQ  
No Degradation In Output Power  
MRF284R1 MRF284LSR1  
2
MOTOROLA RF DEVICE DATA  
ꢀ ꢉ  
ꢀꢊ  
ꢔ ꢉ  
ꢀ ꢋ  
ꢔ ꢊ  
ꢀꢕ  
ꢀꢐ  
ꢔ ꢋ  
ꢎ ꢎ  
ꢘ ꢘ  
ꢒꢉ  
ꢒ ꢊ  
ꢒ ꢋ  
ꢏ ꢑ  
ꢀ ꢌ  
ꢏ ꢌ  
ꢏꢉ ꢐ  
ꢏꢉ ꢋ  
ꢏ ꢋ  
ꢏ ꢉꢕ  
ꢖ ꢋ  
ꢀ ꢁ  
ꢇ ꢅ ꢆꢄꢅ ꢆ  
ꢏꢉ ꢙ  
ꢈꢉꢉ ꢈꢉ ꢊ  
ꢈꢉ ꢙ  
ꢈꢉ ꢋ  
ꢏꢉꢉ  
ꢈꢉ ꢑ  
ꢈꢉ ꢕ  
ꢀ ꢁ  
ꢂꢃ ꢄꢅ ꢆ  
ꢏꢚ  
ꢈꢚ  
Z1  
0.530x 0.080Microstrip  
0.255x 0.080Microstrip  
0.600x 0.080Microstrip  
0.525x 0.080Microstrip  
0.015x 0.325Microstrip  
0.085x 0.325Microstrip  
0.165x 0.325Microstrip  
0.110x 0.515Microstrip  
0.095x 0.515Microstrip  
0.050x 0.515Microstrip  
Z11  
Z12  
Z13  
Z14  
Z15  
Z16  
Z17  
PCB  
0.155x 0.515Microstrip  
0.120x 0.325Microstrip  
0.150x 0.325Microstrip  
0.010x 0.325Microstrip  
0.505x 0.080Microstrip  
0.865x 0.080Microstrip  
0.525x 0.080Microstrip  
Z2  
Z3  
Z4  
Z5  
Z6  
Z7  
Z8  
Z9  
Arlon GX0300–55–22, 0.030,  
ε = 2.55  
r
Z10  
Figure 1. 1.93–2.0 GHz Broadband Test Circuit Schematic  
Table 1. 1.93 – 2.0 GHz Broadband Test Circuit Component Designations and Values  
Designators  
Description  
Ferrite Beads, Round, Ferroxcube #56–590–65–3B  
0.8–8.0 pF Gigatrim Variable Capacitors, Johanson #27291SL  
B1 – B3  
C1, C2, C8  
C3, C17  
C4, C14  
C5  
22 mF, 35 V Tantalum Surface Mount Chip Capacitors, Kemet #T491X226K035AS4394  
0.1 mF Chip Capacitors, Kemet #CDR33BX104AKWS  
220 pF Chip Capacitor, B Case, ATC #100B221KP500X  
C6, C12  
C7, C13  
C9  
1000 pF Chip Capacitors, B Case, ATC #100B102JCA50X  
5.1 pF Chip Capacitors, B Case, ATC #100B5R1CCA500X  
1.2 pF Chip Capacitor, B Case, ATC #100B1R2CCA500X  
2.7 pF Chip Capacitor, B Case, ATC #100B2R7CCA500X  
0.6–4.5 pF Gigatrim Variable Capacitors, Johanson #27271SL  
200 pF Chip Capacitors, B Case, ATC #100B201KP500X  
10 mF, 35 V Tantalum Surface Mount Chip Capacitor, Kemet #T495X106K035AS4394  
4 Turns, #24 AWG, 0.120OD, 0.140Long, (12.5 nH), Coilcraft #A04T–5  
2 Turns, #24 AWG, 0.120OD, 0.140Long, (5.0 nH), Coilcraft #A02T–5  
12 , 1/4 W Chip Resistors, 0.08x 0.13, Garrett Instruments #RM73B2B120JT  
560 k, 1/4 W Chip Resistor, 0.08x 0.13″  
C10  
C11  
C15, C16  
C18  
L1, L2  
L3  
R1, R2, R3, R5, R6, R7  
R4  
W1, W2, W3  
WS1, WS2  
Solid Copper Buss Wire, 16 AWG  
Beryllium Copper Wear Blocks 0.005x 0.250x 0.250″  
MOTOROLA RF DEVICE DATA  
MRF284R1 MRF284LSR1  
3
ꢏ ꢑ  
ꢀ ꢋ  
ꢏꢉ ꢌ  
ꢀꢑ  
ꢏ ꢌ  
ꢀ ꢊ  
ꢒ ꢋ  
ꢀꢕ  
ꢒ ꢊ  
ꢔ ꢋ  
ꢏꢉ ꢕ  
ꢏꢉ ꢗ  
ꢒꢉ  
ꢔ ꢉ  
ꢀꢌ  
ꢔ ꢊ  
ꢀꢐ  
ꢏꢋ  
ꢏꢕ  
ꢖꢉ  
ꢏꢉ ꢋ  
ꢏꢉ ꢐ  
ꢖ ꢋ  
ꢏꢉ ꢙ  
ꢒ ꢛꢊ  
ꢏ ꢐ  
ꢖ ꢊ  
ꢏ ꢊ  
ꢏ ꢉ  
MRF284  
Rev–0  
Figure 2. 1.93–2.0 GHz Broadband Test Circuit Component Layout  
MRF284  
Rev–0  
Figure 3. MRF284 Test Circuit Photomaster  
(Reduced 18% in printed data book, DL110/D)  
MRF284R1 MRF284LSR1  
4
MOTOROLA RF DEVICE DATA  
ꢛ ꢅ ꢄ ꢄ ꢖꢣ  
ꢀ ꢉ  
ꢄꢉ  
ꢏ ꢉ  
ꢀ ꢋ  
ꢘ ꢘ  
ꢔ ꢋ  
ꢀꢚ  
ꢔ ꢌ  
ꢔ ꢐ  
ꢘ ꢘ  
ꢔꢉ  
ꢀꢕ  
ꢔ ꢊ  
ꢀꢗ  
ꢤ ꢉ  
ꢀ ꢌ  
ꢀꢉ ꢙ  
ꢀꢉꢉ  
ꢏꢉꢉ ꢏꢉ ꢋ  
ꢏꢉ ꢙ  
ꢀ ꢑ  
ꢏ ꢚ ꢏ ꢕ  
ꢏꢊ ꢏꢌ  
ꢏꢗ  
ꢤ ꢊ  
ꢀ ꢁ  
ꢇ ꢅ ꢆꢄꢅ ꢆ  
ꢖꢋ  
ꢈꢉ ꢙ ꢈꢉꢉ  
ꢀ ꢁ  
ꢂꢃ ꢄꢅ ꢆ  
ꢘꢅꢆ  
ꢈ ꢊ  
ꢈꢌ ꢈꢐ  
ꢈꢕ  
ꢏ ꢉꢕ  
Z1  
Z2  
Z3  
Z4  
Z5  
Z6  
Z7  
Z8  
Z9  
0.363x 0.080Microstrip  
0.080x 0.080Microstrip  
0.916x 0.080Microstrip  
0.517x 0.080Microstrip  
0.050x 0.325Microstrip  
0.050x 0.325Microstrip  
0.071x 0.325Microstrip  
0.125x 0.325Microstrip  
0.210x 0.515Microstrip  
Z10  
Z11  
Z12  
Z13  
Z14  
Z15  
Z16  
PCB  
0.210x 0.515Microstrip  
0.235x 0.325Microstrip  
0.02x 0.325Microstrip  
0.02x 0.325Microstrip  
0.510x 0.080Microstrip  
0.990x 0.080Microstrip  
0.390x 0.080Microstrip  
Arlon GX0300–55–22, 0.030,  
ε = 2.55  
r
Figure 4. 2.0 GHz Class A Test Circuit Schematic  
MOTOROLA RF DEVICE DATA  
MRF284R1 MRF284LSR1  
5
Table 2. 2.0 GHz Class A Test Circuit Component Designations and Values  
Designators  
Description  
B1 – B5  
C1, C9, C16  
C2, C13  
C3, C14  
C4, C11  
C5  
Ferrite Beads, Round, Ferroxcube # 56–590–65–3B  
100 µF, 50 V Electrolytic Capacitors, Mallory #SME50VB101M12X25L  
51 pF Chip Capacitors, B Case, ATC #100B510JCA500x  
10 pF Chip Capacitors, B Case, ATC #100B100JCA500X  
12 pF Chip Capacitors, B Case, ATC #100B120JCA500X  
0.8 – 8.0 pF Variable Capacitor, Johansen Gigatrim #27291SL  
4.7 pF Chip Capacitor, B Case, ATC #100B4R7CCA500X  
C6  
C7, C15  
C8  
91 pF Chip Capacitors, B Case, ATC #100B910KP500X  
1000 pF Chip Capacitor, B Case, ATC #100B102JCA50X  
C10  
0.1 µF Chip Capacitor, Kemet #CDR33BX104AKWS  
C12, C17  
L1  
0.6 – 4.5 pF Variable Capacitors, Johansen Gigatrim #27271SL  
4 Turns, #27 AWG, 0.087OD, 0.050ID, 0.069Long, 10 nH  
5 Turns, #24 AWG, 0.083OD, 0.040ID, 0.128Long, 12.5 nH  
9 Turns, #26 AWG, 0.080OD, 0.046ID, 0.170Long, 30.8 nH  
1000 Potentiometer, 1/2 W, 10 Turns, Bourns  
L2  
L3, L4  
P1  
Q1  
Transistor, NPN, Motorola P/N: MJD31, Case 369A–10  
Q2  
Transistor, PNP, Motorola P/N: MJD32, Case 369A–10  
R1  
360 , Fixed Film Chip Resistor, 0.08x 0.13, Garrett Instruments #RM73B2B361JT  
2 x 12 k, Fixed Film Chip Resistor, 0.08x 0.13, Garrett Instruments #RM73B2B122JT  
1 , Wirewound, 5 W, 3% Resistor, Dale # RE60G1R00  
R2  
R3  
R4  
4 x 6.8 k, Fixed Film Chip Resistor, 0.08x 0.13, Garrett Instruments #RM73B2B682JT  
2 x 1500 , Fixed Film Chip Resistor, 0.08x 0.13, Garrett Instruments #RM73B2B152JT  
270 , Fixed Film Chip Resistor, 0.08x 0.13, Garrett Instruments #RM73B2B271JT  
12 , Fixed Film Chip Resistors, 0.08x 0.13, Garrett Instruments #RM73B2B120JT  
R5  
R6  
R7 – R11  
MRF284R1 MRF284LSR1  
6
MOTOROLA RF DEVICE DATA  
TYPICAL CHARACTERISTICS  
ꢉ ꢌ  
ꢉ ꢋ  
ꢉ ꢊ  
ꢉ ꢉ  
ꢉ ꢙ  
ꢌ ꢙ  
ꢋ ꢐ  
ꢋ ꢙ  
ꢊ ꢐ  
ꢊ ꢙ  
ꢉ ꢐ  
ꢉ ꢙ  
ꢌ ꢐ  
ꢌ ꢙ  
ꢋ ꢐ  
ꢋ ꢙ  
ꢊ ꢐ  
ꢊ ꢙ  
ꢉ ꢐ  
ꢉ ꢙ  
ꢌ ꢒ  
ꢋ ꢒ  
ꢳ ꢴ ꢵ  
ꢥ ꢦ  
ꢄ ꢸ ꢉ ꢒ  
ꢬ ꢭ  
ꢸ ꢊꢑ ꢍ ꢫꢝ  
ꢸ ꢊꢙ ꢙ ꢹ ꢪ  
ꢸ ꢊ ꢑ ꢍ ꢫꢝ  
ꢘ ꢘ  
ꢘ ꢘ  
ꢘ ꢤ  
ꢛ ꢬꢭ ꢺꢟ ꢠ ꢠ  
ꢸ ꢊ ꢙꢙ ꢹꢪ  
ꢘ ꢤ  
ꢯ ꢸ ꢊꢙ ꢙꢙ ꢰ ꢱꢲ ꢛ ꢬꢭ ꢺꢟ ꢠ ꢭ ꢠ  
ꢉꢮ ꢐ ꢊꢮ ꢙ ꢊꢮ ꢐ  
ꢄ ꢧ ꢂ ꢃꢄ ꢅꢆ ꢄ ꢇꢒꢩ ꢀ ꢜ ꢒꢪꢆꢆ ꢛꢢ  
ꢌ ꢮꢙ  
ꢙ ꢮꢐ  
ꢉꢮ ꢙ  
ꢋꢮ ꢙ  
ꢋ ꢮ ꢐ  
ꢬ ꢭ  
Figure 5. Output Power & Power Gain  
versus Input Power  
Figure 6. Output Power versus Frequency  
ꢉ ꢊ  
ꢶꢉ ꢙ  
ꢶ ꢷꢊ ꢙ  
ꢶ ꢷꢋ ꢙ  
ꢶ ꢷꢌ ꢙ  
ꢶ ꢷꢐ ꢙ  
ꢶ ꢷꢑ ꢙ  
ꢶ ꢷꢕ ꢙ  
ꢶ ꢷꢗ ꢙ  
ꢸ ꢊ ꢑ ꢍꢫꢝ  
ꢸ ꢊ ꢙꢙ ꢹ ꢪ  
ꢘ ꢤ  
ꢯ ꢸ ꢊ ꢙꢙ ꢙ ꢮꢙ ꢰ ꢱꢲ  
ꢶꢉ ꢐ  
ꢶꢊ ꢙ  
ꢉ ꢉ  
ꢉ ꢙ  
ꢥ ꢦ  
ꢯ ꢸ ꢊ ꢙꢙ ꢙ ꢮꢉ ꢰ ꢱꢲ  
ꢋ ꢻꢫ ꢇ ꢻꢫ ꢠꢻ  
ꢐ ꢵꢼ ꢇ ꢻꢫ ꢠꢻ  
ꢶꢊ ꢐ  
ꢶꢋ ꢙ  
ꢸ ꢋ ꢙ ꢒ ꢜꢄ ꢩ ꢄ ꢢ  
ꢸ ꢊ ꢙꢙ ꢹꢪ  
ꢳ ꢴ ꢵ  
ꢕ ꢵꢼ ꢇꢻ ꢫ ꢠ ꢻ  
ꢘ ꢤ  
ꢯ ꢉ ꢸ ꢊ ꢙꢙ ꢙ ꢮꢙ ꢰꢱ ꢲ  
ꢯ ꢊ ꢸ ꢊ ꢙꢙ ꢙ ꢮꢉ ꢰꢱ ꢲ  
ꢶꢌ ꢙ  
ꢊ ꢗ  
ꢙ ꢮꢉ  
ꢊ ꢙ  
ꢍ ꢧ ꢘꢀꢪ ꢂ ꢃ ꢛ ꢅꢄ ꢄꢖꢣ ꢍ ꢇ ꢖꢆꢪ ꢎ ꢩ ꢜꢍ ꢫ ꢝꢢ  
ꢘ ꢘ  
Figure 7. Intermodulation Distortion Products  
versus Output Power  
Figure 8. Power Gain and Intermodulation  
Distortion versus Supply Voltage  
ꢶ ꢷꢊ ꢙ  
ꢶ ꢷꢋ ꢙ  
ꢶ ꢷꢌ ꢙ  
ꢶ ꢷꢐ ꢙ  
ꢶ ꢷꢑ ꢙ  
ꢸ ꢊ ꢑ ꢍꢫ ꢝ  
ꢯ ꢸ ꢊ ꢙꢙ ꢙ ꢮꢙ ꢰ ꢱꢲ  
ꢯ ꢸ ꢊ ꢙꢙ ꢙ ꢮꢉ ꢰ ꢱꢲ  
ꢉ ꢊ  
ꢉ ꢉ  
ꢉ ꢙ  
ꢉ ꢙꢙ ꢹꢪ  
ꢋ ꢙꢙ ꢹꢪ  
ꢸ ꢊ ꢑ ꢍ ꢫꢝ  
ꢯ ꢸ ꢊ ꢙꢙ ꢙ ꢮ ꢙ ꢰꢱ ꢲ  
ꢯ ꢸ ꢊ ꢙꢙ ꢙ ꢮ ꢉ ꢰꢱ ꢲ  
ꢙ ꢮ ꢉ  
ꢄ ꢧ ꢇ ꢅꢆ ꢄꢅ ꢆ ꢄ ꢇꢒꢩ ꢀ ꢜ ꢒꢪꢆꢆ ꢛꢢ ꢄ ꢩꢄ  
ꢳ ꢴꢵ  
ꢄ ꢧ ꢇ ꢅꢆꢄ ꢅꢆ ꢄ ꢇ ꢒꢩ ꢀ ꢜꢒꢪꢆꢆꢛ ꢢ ꢄ ꢩ ꢄ  
ꢳ ꢴ ꢵ  
Figure 9. Intermodulation Distortion  
versus Output Power  
Figure 10. Power Gain versus Output Power  
MOTOROLA RF DEVICE DATA  
MRF284R1 MRF284LSR1  
7
TYPICAL CHARACTERISTICS  
ꢉ ꢙꢙ  
ꢸ ꢕꢐ °ꢏ  
ꢯ ꢟꢞꢭ ꢺꢠ  
ꢬ ꢦ ꢦ  
°
ꢯ ꢟꢞꢭ ꢺꢠ  
ꢳꢦ ꢦ  
ꢉ ꢙ  
ꢆ ꢸ ꢉ ꢕꢐ °ꢏ  
ꢻ ꢦ ꢦ  
ꢉꢑ  
ꢊꢙ  
ꢊꢌ  
ꢊꢗ  
ꢉ ꢊ  
ꢍ ꢧ ꢘꢀ ꢪꢂ ꢃ ꢛ ꢇ ꢅꢀꢏꢩ ꢍ ꢇ ꢖꢆꢪ ꢎ ꢩ ꢜꢍ ꢇ ꢖꢆꢛ ꢢ  
ꢘ ꢛ  
ꢉ ꢑ  
ꢊ ꢙ  
ꢊ ꢌ  
ꢘ ꢘ  
Figure 11. DC Safe Operating Area  
Figure 12. Capacitance versus  
Drain Source Voltage  
ꢑꢙ  
ꢐꢙ  
ꢌꢙ  
ꢋꢙ  
ꢉ ꢉ  
ꢉ ꢙ  
ꢌ ꢐ  
ꢌ ꢙ  
ꢋ ꢐ  
ꢋ ꢙ  
ꢶ ꢋ ꢊ  
ꢁ ꢅ ꢃꢘ ꢪꢰ ꢩꢃ ꢆꢪꢖ  
ꢊꢙ  
ꢉꢙ  
η
ꢳ ꢴ ꢵ  
ꢆꢿꢳ ꢶ ꢆꢳ ꢭꢠ  
ꢸ ꢋ ꢙ ꢒ ꢜꢄ ꢩ ꢄ ꢢꢧ ꢂ ꢸ ꢊ ꢙꢙ ꢹꢪ  
ꢘ ꢤ  
ꢶ ꢉꢙ  
ꢶ ꢽꢊꢙ  
ꢶ ꢽꢋꢙ  
ꢶ ꢷꢌ ꢙ  
ꢶ ꢷꢐꢙ  
ꢶ ꢽꢑꢙ  
ꢶ ꢕꢙ  
ꢶ ꢽꢗꢙ  
ꢶ ꢽꢚꢙ  
ꢋ ꢮꢙ  
ꢊ ꢮꢙ  
ꢸ ꢊꢑ ꢍ ꢫꢝ  
ꢸ ꢉꢮ ꢗ ꢪ ꢫꢝ  
ꢶ ꢋ ꢑ  
ꢶ ꢌ ꢙ  
ꢘ ꢤ  
ꢯ ꢸ ꢊꢙ ꢙꢙꢮ ꢙ ꢰ ꢱꢲ  
ꢯ ꢸ ꢊꢙ ꢙꢙꢮ ꢉ ꢰ ꢱꢲ  
ꢉ ꢙ ꢉ ꢐ ꢊ ꢙ ꢊꢐ ꢋꢙ ꢋꢐ ꢌꢙ ꢌ ꢐ ꢐꢙ ꢐ ꢐ ꢑ ꢙ  
ꢄ ꢧ ꢂ ꢃꢄ ꢅꢆ ꢄ ꢇꢒꢩ ꢀ ꢜ ꢫꢔ ꢹ ꢢ  
ꢉ ꢚꢌ ꢙ  
ꢊ ꢙꢙ ꢙ  
Figure 13. Class A Third Order Intercept Point  
Figure 14. 1.92–2.0 GHz Broadband Circuit Performance  
ꢉꢮ ꢩꢓ ꢙ ꢚ  
ꢉꢮ ꢩꢓ ꢙ ꢗ  
ꢉꢮ ꢩꢓ ꢙ ꢕ  
ꢉꢮ ꢩꢓ ꢙ ꢑ  
ꢉꢮ ꢩꢓ ꢙ ꢐ  
ꢉꢮ ꢩꢓ ꢙ ꢌ  
ꢆ ꢧ ꢾꢅ ꢃꢏ ꢆꢂ ꢇ ꢃ ꢆꢩ ꢰꢄ ꢩ ꢀꢪꢆꢅꢀ ꢩ ꢜ°ꢏꢢ  
ꢆꢼ ꢬꢦ ꢺꢻ ꢞ ꢥꢼ ꢫꢬ ꢦꢥꢟ ꢞ ꣁꢦ ꢝꢞꢟ ꢝꢴ ꢟꢞ ꢵ ꢠꢫ ꢰꢆ ꢔꢁ ꢬꢭ ꢼ ꢳꢴ ꢻꢦ ꣄ ꢞ ꢹꢥ ꢠꢻ ꢠ ꢫ ꢻꢞ ꢬꢭ ꢝꢴ ꢻꢻ ꢠꢭ ꢵ ꢮ  
ꢖꢬ ꢯ ꢠ ꢵ ꢠꢦꢵ ꢦ ꢞꢵ ꢠꢟ ꢠꣅꢞ ꢵꢠ ꢫ ꢵ ꢠꢹ ꢥꢠ ꢻꢞ ꢵ ꢴꢻ ꢠ ꢼ ꢞꣅꢠ ꢝꢳ ꢻꢻ ꢠꢟ ꢞꢵ ꢠ ꢫ ꢵ ꢳ ꣆ ꢠꢵ ꢵ ꢠ ꢻ ꢵ ꢼ ꢞꢭ ꢉ ꢙꣃ  
ꢳꢯ ꢵ ꢼꢠ ꢵ ꢼꢠꢳ ꢻ ꢠꢵꢬ ꢝꢞ ꢟ ꢥꢻ ꢠ ꢫꢬ ꢝꢵꢬ ꢳꢭ ꢯ ꢳ ꢻ ꢹꢠ ꢵ ꢞ ꢟ ꢯ ꢞ ꢬꢟꢴ ꢻꢠ ꢮ ꢘꢬ ꣅꢬꢫ ꢠ ꢰꢆ ꢔꢁ ꢯ ꢞꢝ ꢵꢳ ꢻ ꣆ ꣁ ꢂ  
ꢯ ꢳꢻ ꢰ ꢆꢔ ꢁ ꢬ ꢭ ꢞ ꢥꢞ ꢻ ꢵꢬ ꢝꢴꢟ ꢞ ꢻ ꢞꢥ ꢥꢟ ꢬꢝꢞ ꢵ ꢬꢳ ꢭꢮ  
Figure 15. MTBF Factor versus Junction Temperature  
MRF284R1 MRF284LSR1  
8
MOTOROLA RF DEVICE DATA  
ꢉ ꢗꢙ ꢙ ꢰꢱ ꢲ  
ꢟꢳ ꢞ ꢫ  
ꢯ ꢸ ꢊ ꢙꢙ ꢙ ꢰꢱ ꢲ  
ꢦ ꢳ ꢴꢻ ꢝ ꢠ  
ꢈ ꢸ Ω  
ꢏ ꢏ  
ꢸ ꢊ ꢑ ꢍ ꢧ ꢂ ꢸ ꢊ ꢙꢙ ꢹꢪ ꢧ ꢄ ꢸ ꢉ ꢐ ꢒ ꢪꣅꢺ ꢮ  
ꢘ ꢤ ꢳ ꢴ ꢵ  
f
Z
Z
load  
source  
MHz  
1800  
1860  
1900  
1960  
2000  
1.0 – j0.4  
1.0 – j0.8  
1.0 – j1.1  
1.0 – j1.4  
1.0 – j2.3  
2.1 + j0.4  
2.2 – j0.2  
2.3 – j0.5  
2.5 – j0.9  
2.6 – j0.92  
Z
Z
=
Test circuit impedance as measured from  
gate to ground.  
source  
=
Test circuit impedance as measured  
from drain to ground.  
load  
ꢇ ꢴ ꢵꢥ ꢴ ꢵ  
ꢰꢞ ꢵ ꢝꢼ ꢬꢭ ꢺ  
ꢃꢠ ꢵ ꢿꢳ ꢻꣂ  
ꢘꢠ ꣅꢬꢝꢠ  
ꢅꢭ ꢫ ꢠꢻ ꢵ  
ꢂ ꢭꢥꢴ ꢵ  
ꢰ ꢞꢵ ꢝꢼꢬ ꢭꢺ  
ꢃ ꢠꢵꢿ ꢳꢻ ꣂ  
Z
Z
source  
load  
Figure 16. Series Equivalent Input and Output Impedence  
MOTOROLA RF DEVICE DATA  
MRF284R1 MRF284LSR1  
9
NOTES  
MRF284R1 MRF284LSR1  
10  
MOTOROLA RF DEVICE DATA  
PACKAGE DIMENSIONS  
2X  
Q
ꢃ ꢇ ꢆꢩ ꢛ ꢡ  
ꢉꢮ ꢂ ꢃ ꢆꢩ ꢀ ꢄꢀ ꢩ ꢆ ꢘ ꢂ ꢰꢩꢃ ꢛ ꢂ ꢇꢃ ꢛ ꢪ ꢃꢘ ꢆꢇ ꢖꢩ ꢀ ꢪꢃ ꢏ ꢩꢛ  
ꢄ ꢩꢀ ꢪ ꢛꢰꢩ ꢣ ꢉꢌꢮ ꢐꢰꢶꢉ ꢚꢚꢌꢮ  
G
ꢞꢞ ꢞ  
B
1
ꢊꢮ ꢏ ꢇ ꢃ ꢆꢀ ꢇ ꢖꢖ ꢂꢃ ꢎ ꢘ ꢂ ꢰꢩꢃ ꢛ ꢂꢇ ꢃ ꢡ ꢂ ꢃ ꢏꢱ ꢮ  
ꢋꢮ ꢘ ꢂ ꢰꢩꢃ ꢛ ꢂꢇ ꢃ ꢱ ꢂ ꢛ ꢰꢩ ꢪꢛ ꢅ ꢀ ꢩꢘ ꢙꢮ ꢙꢋꢙ ꢜꢙ ꢮꢕꢑ ꢊꢢ ꢪ ꢒ ꢪꢣ  
ꢁ ꢀ ꢇꢰ ꢄꢪ ꢏ ꣇ꢪ ꢎ ꢩ ꢔ ꢇꢘ ꢣꢮ  
3
INCHES  
DIM MIN MAX  
MILLIMETERS  
B
MIN  
ꢊꢙꢮ ꢉꢚ  
ꢐꢮ ꢕꢊ  
ꢋꢮ ꢉꢗ  
ꢐꢮ ꢋꢋ  
ꢉꢮ ꢌꢙ  
ꢙꢮ ꢉꢙ  
MAX  
ꢊꢙꢮ ꢌ ꢐ  
ꢐꢮ ꢚ ꢕ  
ꢌꢮ ꢌ ꢐ  
ꢐꢮ ꢐ ꢚ  
ꢉꢮ ꢑ ꢐ  
ꢙꢮ ꢉ ꢐ  
2
(FLANGE)  
A
B
ꢙꢮ ꢕꢚꢐ  
ꢙꢮ ꢊꢊꢐ  
ꢙꢮ ꢉꢊꢐ  
ꢙꢮ ꢊꢉꢙ  
ꢙꢮ ꢙꢐꢐ  
ꢙꢮ ꢙꢙꢌ  
ꢙꢮ ꢗꢙꢐ  
ꢙꢮ ꢊꢋꢐ  
ꢙꢮ ꢉꢕꢐ  
ꢙꢮ ꢊꢊꢙ  
ꢙꢮ ꢙꢑꢐ  
ꢙꢮ ꢙꢙꢑ  
2X K  
2X D  
꣆ ꣆ ꣆  
C
ꢆ ꢪ  
R
D
(LID)  
E
F
G
ꢙꢮ ꢐꢑꢊ ꢨꢔ ꢛꢏ  
ꢉꢌꢮ ꢊꢗ ꢨꢔ ꢛꢏ  
H
ꢙꢮ ꢙꢕꢕ  
ꢙꢮ ꢊꢊꢙ  
ꢙꢮ ꢋꢐꢐ  
ꢙꢮ ꢋꢐꢕ  
ꢙꢮ ꢉꢊꢐ  
ꢙꢮ ꢊꢊꢕ  
ꢙꢮ ꢊꢊꢐ  
ꢙꢮ ꢙꢗꢕ  
ꢙꢮ ꢊꢐꢙ  
ꢙꢮ ꢋꢑꢐ  
ꢙꢮ ꢋꢑꢋ  
ꢙꢮ ꢉꢋꢐ  
ꢙꢮ ꢊꢋꢋ  
ꢙꢮ ꢊꢋꢐ  
ꢉꢮ ꢚꢑ  
ꢐꢮ ꢐꢚ  
ꢚꢮ ꢙꢊ  
ꢚꢮ ꢙꢕ  
ꢋꢮ ꢉꢗ  
ꢐꢮ ꢕꢕ  
ꢐꢮ ꢕꢊ  
ꢊꢮ ꢊ ꢉ  
ꢑꢮ ꢋ ꢐ  
ꢚꢮ ꢊ ꢕ  
ꢚꢮ ꢊ ꢊ  
ꢋꢮ ꢌ ꢋ  
ꢐꢮ ꢚ ꢊ  
ꢐꢮ ꢚ ꢕ  
F
K
H
M
ꢝꢝꢝ  
N
N
(LID)  
Q
C
E
R
S
aaa  
bbb  
ccc  
ꢙꢮ ꢙꢙꢐ ꢨꢀ ꢩ ꢁ  
ꢙꢮ ꢙꢉꢙ ꢨꢀ ꢩ ꢁ  
ꢙꢮ ꢙꢉꢐ ꢨꢀ ꢩ ꢁ  
ꢙꢮ ꢉꢋꢨ ꢀ ꢩꢁ  
ꢙꢮ ꢊꢐꢨ ꢀ ꢩꢁ  
ꢙꢮ ꢋꢗꢨ ꢀ ꢩꢁ  
S
(INSULATOR)  
ꢞ ꢞꢞ  
ꢆ ꢪ  
SEATING  
PLANE  
T
ꢛ ꢆꢣ ꢖꢩ ꢉꢡ  
ꢄ ꢂꢃ ꢉꢮ ꢘ ꢀ ꢪꢂ ꢃ  
ꢊꢮ ꢎ ꢪꢆ ꢩ  
ꢋꢮ ꢛ ꢇꢅ ꢀ ꢏ ꢩ  
꣆꣆ ꣆  
ꢆ ꢪ  
M
(INSULATOR)  
CASE 360B–05  
ISSUE F  
A
A
NI–360  
MRF284R1  
A
A
(FLANGE)  
B
B
1
2
ꢃ ꢇ ꢆꢩ ꢛ ꢡ  
ꢉꢮ ꢂ ꢃ ꢆꢩ ꢀ ꢄꢀ ꢩ ꢆ ꢘ ꢂ ꢰꢩꢃ ꢛ ꢂ ꢇꢃ ꢛ ꢪ ꢃꢘ ꢆꢇ ꢖꢩ ꢀ ꢪꢃ ꢏ ꢩꢛ  
ꢄ ꢩꢀ ꢪ ꢛꢰꢩ ꢣ ꢉꢌꢮ ꢐꢰꢶꢉ ꢚꢚꢌꢮ  
ꢊꢮ ꢏ ꢇ ꢃ ꢆꢀ ꢇ ꢖꢖ ꢂꢃ ꢎ ꢘ ꢂ ꢰꢩꢃ ꢛ ꢂꢇ ꢃ ꢡ ꢂ ꢃ ꢏꢱ ꢮ  
ꢋꢮ ꢘ ꢂ ꢰꢩꢃ ꢛ ꢂꢇ ꢃ ꢱ ꢂ ꢛ ꢰꢩ ꢪꢛ ꢅ ꢀ ꢩꢘ ꢙꢮ ꢙꢋꢙ ꢜꢙ ꢮꢕꢑ ꢊꢢ ꢪ ꢒ ꢪꢣ  
ꢁ ꢀ ꢇꢰ ꢄꢪ ꢏ ꣇ꢪ ꢎ ꢩ ꢔ ꢇꢘ ꢣꢮ  
2X K  
(FLANGE)  
2X D  
INCHES  
DIM MIN MAX  
MILLIMETERS  
R
MIN  
ꢚꢮ ꢐꢋ  
ꢐꢮ ꢕꢊ  
ꢊꢮ ꢑꢕ  
ꢐꢮ ꢋꢋ  
ꢙꢮ ꢗꢚ  
ꢙꢮ ꢉꢙ  
ꢉꢮ ꢌꢐ  
ꢊꢮ ꢉꢑ  
ꢚꢮ ꢙꢊ  
ꢚꢮ ꢙꢕ  
ꢐꢮ ꢕꢕ  
ꢐꢮ ꢕꢊ  
MAX  
ꢚꢮ ꢕꢗ  
ꢐꢮ ꢚꢕ  
ꢋꢮ ꢚꢌ  
ꢐꢮ ꢐꢚ  
ꢉꢮ ꢉꢌ  
ꢙꢮ ꢉꢐ  
ꢉꢮ ꢕꢙ  
ꢊꢮ ꢚꢊ  
ꢚꢮ ꢊꢕ  
ꢚꢮ ꢊꢊ  
ꢐꢮ ꢚꢊ  
ꢐꢮ ꢚꢕ  
(LID)  
A
B
ꢙꢮ ꢋꢕꢐ  
ꢙꢮ ꢊꢊꢐ  
ꢙꢮ ꢉꢙꢐ  
ꢙꢮ ꢊꢉꢙ  
ꢙꢮ ꢙꢋꢐ  
ꢙꢮ ꢙꢙꢌ  
ꢙꢮ ꢙꢐꢕ  
ꢙꢮ ꢙꢗꢐ  
ꢙꢮ ꢋꢐꢐ  
ꢙꢮ ꢋꢐꢕ  
ꢙꢮ ꢊꢊꢕ  
ꢙꢮ ꢊꢊꢐ  
ꢙꢮ ꢋꢗꢐ  
ꢙꢮ ꢊꢋꢐ  
ꢙꢮ ꢉꢐꢐ  
ꢙꢮ ꢊꢊꢙ  
ꢙꢮ ꢙꢌꢐ  
ꢙꢮ ꢙꢙꢑ  
ꢙꢮ ꢙꢑꢕ  
ꢙꢮ ꢉꢉꢐ  
ꢙꢮ ꢋꢑꢐ  
ꢙꢮ ꢋꢑꢋ  
ꢙꢮ ꢊꢋ  
C
N
F
(LID)  
D
H
E
ꢆ ꢪ  
F
H
K
E
M
N
C
S
R
(INSULATOR)  
S
ꢙꢮ ꢊꢋꢐ  
aaa  
bbb  
ccc  
ꢙꢮ ꢙꢙꢐ ꢨꢀ ꢩ ꢁ  
ꢙꢮ ꢙꢉꢙ ꢨꢀ ꢩ ꢁ  
ꢙꢮ ꢙꢉꢐ ꢨꢀ ꢩ ꢁ  
ꢙꢮ ꢉꢋꢨ ꢀ ꢩꢁ  
ꢙꢮ ꢊꢐꢨ ꢀ ꢩꢁ  
ꢙꢮ ꢋꢗꢨ ꢀ ꢩꢁ  
SEATING  
PLANE  
PIN 3  
T
M
(INSULATOR)  
꣆ ꣆꣆  
ꢄ ꢂꢃ ꢉꢮ ꢘ ꢀ ꢪꢂ ꢃ  
ꢊꢮ ꢎ ꢪꢆ ꢩ  
ꢋꢮ ꢛ ꢇꢅ ꢀ ꢏ ꢩ  
CASE 360C–05  
ISSUE D  
NI–360S  
MRF284LSR1  
MOTOROLA RF DEVICE DATA  
MRF284R1 MRF284LSR1  
11  
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and  
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different  
applications and actual performance may vary over time. All operating parameters, including “Typicals”, must be validated for each customer application by  
customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended,  
or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other  
application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola  
products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and  
distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal  
injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture  
of the part. Motorola and the Stylized M Logo are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.  
Motorola and the Stylized M Logo are registered in the US Patent & Trademark Office. All other product or service names are the property of their respective owners.  
E Motorola, Inc. 2003.  
How to reach us:  
USA/EUROPE/Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 1–303–675–2140 or 1–800–441–2447  
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Technical Information Center: 1–800–521–6274  
HOME PAGE: http://www.motorola.com/semiconductors  
MRF284/D  

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