MRF284 [FREESCALE]
RF Power Field Effect Transistors; 射频功率场效应晶体管
| 型号： | MRF284 |
| 厂家： | 
Freescale |
| 描述： | RF Power Field Effect Transistors |
| 文件： | 总12页 (文件大小：376K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Document Number: MRF284
Rev. 17, 5/2006
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
MRF284LR1
N-Channel Enhancement-Mode Lateral MOSFETs
MRF284LSR1
Designed for PCN and PCS base station applications with frequencies from
1000 to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier
applications. To be used in Class A and Class AB for PCN-PCS/cellular radio
and wireless local loop.
2000 MHz, 30 W, 26 V
LATERAL N-CHANNEL
BROADBAND
• Specified Two-Tone Performance @ 2000 MHz, 26 Volts
Output Power = 30 Watts PEP
Power Gain = 9 dB
RF POWER MOSFETs
Efficiency = 30%
Intermodulation Distortion = -29 dBc
• Typical Single-Tone Performance at 2000 MHz, 26 Volts
Output Power = 30 Watts CW
Power Gain = 9.5 dB
Efficiency = 45%
CASE 360B-05, STYLE 1
NI-360
• Capable of Handling 10:1 VSWR, @ 26 Vdc, 2000 MHz, 30 Watts CW
Output Power
MRF284LR1
Features
• Excellent Thermal Stability
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Low Gold Plating Thickness on Leads. L Suffix Indicates 40μ″ Nominal.
• RoHS Compliant
CASE 360C-05, STYLE 1
NI-360S
• In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel.
MRF284LSR1
Table 1. Maximum Ratings
Rating
Symbol
Value
-0.5, +65
20
Unit
Vdc
Vdc
Drain-Source Voltage
Gate-Source Voltage
V
DSS
V
GS
Total Device Dissipation @ T = 25°C
Derate above 25°C
P
87.5
0.5
W
W/°C
C
D
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
T
- 65 to +150
150
°C
°C
°C
stg
T
C
T
200
J
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
R
θ
JC
2.0
°C/W
Table 3. Electrical Characteristics (T = 25°C unless otherwise noted)
C
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Drain-Source Breakdown Voltage
(V = 0, I = 10 μAdc)
V
65
—
—
—
—
—
—
1.0
10
Vdc
(BR)DSS
GS
D
Zero Gate Voltage Drain Current
(V = 20 Vdc, V = 0)
I
μAdc
DSS
DS
GS
Gate-Source Leakage Current
(V = 20 Vdc, V = 0)
I
μAdc
GSS
GS
DS
(continued)
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
© Freescale Semiconductor, Inc., 2006. All rights reserved.
Table 3. Electrical Characteristics (T = 25°C unless otherwise noted) (continued)
C
Characteristic
Symbol
Min
Typ
Max
Unit
On Characteristics
Gate Threshold Voltage
V
2.0
3.0
—
3.0
4.0
0.3
1.5
4.0
5.0
0.6
—
Vdc
Vdc
Vdc
S
GS(th)
(V = 10 Vdc, I = 150 μAdc)
DS
D
Gate Quiescent Voltage
(V = 26 Vdc, I = 200 mAdc)
V
GS(q)
DS
D
Drain-Source On-Voltage
(V = 10 Vdc, I = 1.0 Adc)
V
DS(on)
GS
D
Forward Transconductance
(V = 10 Vdc, I = 1.0 Adc)
g
fs
—
DS
D
Dynamic Characteristics
Input Capacitance
(V = 26 Vdc, V = 0, f = 1.0 MHz)
DS
C
—
—
—
43
23
—
—
—
pF
pF
pF
iss
GS
Output Capacitance
(V = 26 Vdc, V = 0, f = 1.0 MHz)
C
oss
DS
GS
Reverse Transfer Capacitance
(V = 26 Vdc, V = 0, f = 1.0 MHz)
C
rss
1.4
DS
GS
Functional Tests (in Freescale Test Fixture, 50 ohm system)
Common-Source Power Gain
G
9
30
—
—
9
10.5
35
—
—
-29
-9
—
—
—
-9
—
—
dB
%
ps
(V = 26 Vdc, P = 30 W, I = 200 mA,
DD
out
DQ
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
Drain Efficiency
η
(V = 26 Vdc, P = 30 W, I = 200 mA,
DD
out
DQ
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
Intermodulation Distortion
IMD
IRL
-32
-15
10.4
35
dBc
dB
dB
%
(V = 26 Vdc, P = 30 W, I = 200 mA,
DD
out
DQ
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
Input Return Loss
(V = 26 Vdc, P = 30 W, I = 200 mA,
DD
out
DQ
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
Common-Source Amplifier Power Gain
G
ps
(V = 26 Vdc, P = 30 W PEP, I = 200 mA,
DD
out
DQ
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
Drain Efficiency
η
—
—
—
8.5
35
(V = 26 Vdc, P = 30 W PEP, I = 200 mA,
DD
out
DQ
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
Intermodulation Distortion
IMD
IRL
-34
-15
9.5
45
dBc
dB
dB
%
(V = 26 Vdc, P = 30 W PEP, I = 200 mA,
DD
out
DQ
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
Input Return Loss
(V = 26 Vdc, P = 30 W PEP, I = 200 mA,
DD
out
DQ
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
Common-Source Amplifier Power Gain
G
ps
(V = 26 Vdc, P = 30 W CW, I = 200 mA,
DD
out
DQ
f1 = 2000.0 MHz)
Drain Efficiency
η
(V = 26 Vdc, P = 30 W CW, I = 200 mA,
DD
out
DQ
f1 = 2000.0 MHz)
MRF284LR1 MRF284LSR1
RF Device Data
Freescale Semiconductor
2
R1
R2
B1
R3
B2
R6
R7
R5
B3
V
V
DD
GG
W1
W2
W3
+
+
+
C6
R4
C7
C4
C15
C13
C12
C14
C3
C17
C18
L2
L3
L1
RF
OUTPUT
C10
Z11 Z12
Z10
Z13
C11
Z14 Z15
Z16
Z17
RF
INPUT
C9
Z9
DUT
C16
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
C5
C8
C1
C2
Z1
0.530″ x 0.080″ Microstrip
0.255″ x 0.080″ Microstrip
0.600″ x 0.080″ Microstrip
0.525″ x 0.080″ Microstrip
0.015″ x 0.325″ Microstrip
0.085″ x 0.325″ Microstrip
0.165″ x 0.325″ Microstrip
0.110″ x 0.515″ Microstrip
0.095″ x 0.515″ Microstrip
0.050″ x 0.515″ Microstrip
Z11
Z12
Z13
Z14
Z15
Z16
Z17
PCB
0.155″ x 0.515″ Microstrip
0.120″ x 0.325″ Microstrip
0.150″ x 0.325″ Microstrip
0.010″ x 0.325″ Microstrip
0.505″ x 0.080″ Microstrip
0.865″ x 0.080″ Microstrip
0.525″ x 0.080″ Microstrip
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
Arlon GX0300-55-22, 0.030″,
ε = 2.55
r
Z10
Figure 1. 1930-2000 MHz Broadband Test Circuit Schematic
Table 4. 1930-2000 MHz Broadband Test Circuit Component Designations and Values
Designators
Description
Ferrite Beads, Round, Ferroxcube #56-590-65-3B
0.8-8.0 pF Gigatrim Variable Capacitors, Johanson #27291SL
B1 - B3
C1, C2, C8
C3, C17
C4, C14
C5
22 mF, 35 V Tantalum Surface Mount Chip Capacitors, Kemet #T491X226K035AS4394
0.1 mF Chip Capacitors, Kemet #CDR33BX104AKWS
220 pF Chip Capacitor, ATC #100B221KP500X
C6, C12
C7, C13
C9
1000 pF Chip Capacitors, ATC #100B102JCA50X
5.1 pF Chip Capacitors, ATC #100B5R1CCA500X
1.2 pF Chip Capacitor, ATC #100B1R2CCA500X
C10
2.7 pF Chip Capacitor, ATC #100B2R7CCA500X
C11
0.6-4.5 pF Gigatrim Variable Capacitors, Johanson #27271SL
200 pF Chip Capacitors, ATC #100B201KP500X
C15, C16
C18
10 mF, 35 V Tantalum Surface Mount Chip Capacitor, Kemet #T495X106K035AS4394
4 Turns, #24 AWG, 0.120″ OD, 0.140″ Long, (12.5 nH), Coilcraft #A04T-5
2 Turns, #24 AWG, 0.120″ OD, 0.140″ Long, (5.0 nH), Coilcraft #A02T-5
12 Ω, 1/4 W Chip Resistors, 0.08″ x 0.13″, Garrett Instruments #RM73B2B120JT
560 kΩ, 1/4 W Chip Resistor, 0.08″ x 0.13″
L1, L2
L3
R1, R2, R3, R5, R6, R7
R4
W1, W2, W3
WS1, WS2
Solid Copper Buss Wire, 16 AWG
Beryllium Copper Wear Blocks 0.005″ x 0.250″ x 0.250″
MRF284LR1 MRF284LSR1
RF Device Data
Freescale Semiconductor
3
C6
R3
C12
C14
R6
C4
R2
R1
W3
R7
W2
B3
C17
C18
W1
B1
R4
B2
R5
C3
C7
L1
C13
C15
L3
C10
WS2
C9
C5
C16
L2
WS1
C11
C2
C1
C8
MRF284
Rev-0
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
Figure 2. 1930-2000 MHz Broadband Test Circuit Component Layout
MRF284LR1 MRF284LSR1
RF Device Data
Freescale Semiconductor
4
V
SUPPLY
+
R1
P1
C1
R3
V
DD
B3
R9
B4
B5
V
DD
B1
R7
B2
R8
+
Q1
R4
R10
R11
+
C11 C13
C10
C15 C16
R6
R5
C9 C7
C2 C4
R2
C8
Q2
L4
RF
OUTPUT
L1
L3
Z10 Z11
Z12
Z13 Z14
Z15
Z16
RF
INPUT
DUT
C14
Z1
Z2
Z3
Z4 Z5
Z6
Z7
Z8
Z9
C12
C17
C3
L2
C5
C6
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
0.363″ x 0.080″ Microstrip
0.080″ x 0.080″ Microstrip
0.916″ x 0.080″ Microstrip
0.517″ x 0.080″ Microstrip
0.050″ x 0.325″ Microstrip
0.050″ x 0.325″ Microstrip
0.071″ x 0.325″ Microstrip
0.125″ x 0.325″ Microstrip
0.210″ x 0.515″ Microstrip
Z10
Z11
Z12
Z13
Z14
Z15
Z16
PCB
0.210″ x 0.515″ Microstrip
0.235″ x 0.325″ Microstrip
0.02″ x 0.325″ Microstrip
0.02″ x 0.325″ Microstrip
0.510″ x 0.080″ Microstrip
0.990″ x 0.080″ Microstrip
0.390″ x 0.080″ Microstrip
Arlon GX0300-55-22, 0.030″,
ε = 2.55
r
Figure 3. 2000 MHz Class A Test Circuit Schematic
MRF284LR1 MRF284LSR1
RF Device Data
Freescale Semiconductor
5
Table 5. 2000 MHz Class A Test Circuit Component Designations and Values
Designators
Description
B1 - B5
C1, C9, C16
C2, C13
C3, C14
C4, C11
C5
Ferrite Beads, Round, Ferroxcube # 56-590-65-3B
100 μF, 50 V Electrolytic Capacitors, Mallory #SME50VB101M12X25L
51 pF Chip Capacitors, ATC #100B510JCA500x
10 pF Chip Capacitors, ATC #100B100JCA500X
12 pF Chip Capacitors, ATC #100B120JCA500X
0.8 - 8.0 pF Variable Capacitor, Johansen Gigatrim #27291SL
4.7 pF Chip Capacitor, ATC #100B4R7CCA500X
C6
C7, C15
C8
91 pF Chip Capacitors, ATC #100B910KP500X
1000 pF Chip Capacitor, ATC #100B102JCA50X
C10
0.1 μF Chip Capacitor, Kemet #CDR33BX104AKWS
C12, C17
L1
0.6 - 4.5 pF Variable Capacitors, Johansen Gigatrim #27271SL
4 Turns, #27 AWG, 0.087″ OD, 0.050″ ID, 0.069″ Long, 10 nH
5 Turns, #24 AWG, 0.083″ OD, 0.040″ ID, 0.128″ Long, 12.5 nH
9 Turns, #26 AWG, 0.080″ OD, 0.046″ ID, 0.170″ Long, 30.8 nH
1000 Ω Potentiometer, 1/2 W, 10 Turns, Bourns
L2
L3, L4
P1
Q1
Transistor, NPN, #MJD31, Case 369A-10
Q2
Transistor, PNP, #MJD32, Case 369A-10
R1
360 Ω, Fixed Film Chip Resistor, 0.08″ x 0.13″, Garrett Instruments #RM73B2B361JT
2 x 12 kΩ, Fixed Film Chip Resistor, 0.08″ x 0.13″, Garrett Instruments #RM73B2B122JT
1 Ω, Wirewound, 5 W, 3% Resistor, Dale # RE60G1R00
R2
R3
R4
4 x 6.8 kΩ, Fixed Film Chip Resistor, 0.08″ x 0.13″, Garrett Instruments #RM73B2B682JT
2 x 1500 Ω, Fixed Film Chip Resistor, 0.08″ x 0.13″, Garrett Instruments #RM73B2B152JT
270 Ω, Fixed Film Chip Resistor, 0.08″ x 0.13″, Garrett Instruments #RM73B2B271JT
12 Ω, Fixed Film Chip Resistors, 0.08″ x 0.13″, Garrett Instruments #RM73B2B120JT
R5
R6
R7 - R11
MRF284LR1 MRF284LSR1
RF Device Data
Freescale Semiconductor
6
TYPICAL CHARACTERISTICS
14
13
12
11
10
9
40
35
30
25
20
15
10
5
45
40
35
30
25
20
15
10
P
4 W
3 W
out
2 W
G
ps
P
= 1 W
in
8
V
I
= 26 Vdc
= 200 mA
V
I
= 26 Vdc
DD
= 200 mA
DD
7
DQ
DQ
f = 2000 MHz Single Tone
1.5 2.0 2.5
P , INPUT POWER (WATTS)
Single Tone
6
4.0
0
0
0.5
1.0
3.0
3.5
1800 1820 1840 1860 1880 1900 1920 1940 1960 1980 2000
f, FREQUENCY (MHz)
in
Figure 4. Output Power & Power Gain
versus Input Power
Figure 5. Output Power versus Frequency
12
−10
−ꢀ20
−ꢀ30
−ꢀ40
−ꢀ50
−ꢀ60
−ꢀ70
−ꢀ80
V
= 26 Vdc
= 200 mA
DD
I
DQ
f = 2000.0 MHz
−15
−20
11
10
1
G
ps
f = 2000.1 MHz
2
3rd Order
5th Order
−25
−30
9
8
7
6
P
= 30 W (PEP)
= 200 mA
out
7th Order
I
DQ
IMD −35
f1 = 2000.0 MHz
f2 = 2000.1 MHz
−40
28
0.1
1.0
10
16
18
20
V , DRAIN SUPPLY VOLTAGE (Vdc)
DD
22
24
26
P
, OUTPUT POWER (WATTS) PEP
out
Figure 6. Intermodulation Distortion Products
versus Output Power
Figure 7. Power Gain and Intermodulation
Distortion versus Supply Voltage
−ꢀ20
−ꢀ30
−ꢀ40
−ꢀ50
−ꢀ60
13
V
= 26 Vdc
f = 2000.0 MHz
I
= 400 mA
DD
DQ
1
f = 2000.1 MHz
300 mA
2
12
11
10
9
100 mA
300 mA
200 mA
200 mA
V
= 26 Vdc
f = 2000.0 MHz
100 mA
DD
I
= 400 mA
DQ
1
f = 2000.1 MHz
2
8
0.1
0.1
1.0
10
1.0
10
P
, OUTPUT POWER (WATTS) PEP
P , OUTPUT POWER (WATTS) PEP
out
out
Figure 8. Intermodulation Distortion
versus Output Power
Figure 9. Power Gain versus Output Power
MRF284LR1 MRF284LSR1
RF Device Data
Freescale Semiconductor
7
TYPICAL CHARACTERISTICS
3
2
100
T
= 75°C
flange
C
iss
T
= 100°C
flange
C
oss
10
1
0
T = 175°C
C
J
rss
1
0
4
8
12
16
20
24
28
0
4
8
12
V , DRAIN SOURCE VOLTAGE (VOLTS)
DS
16
20
24
28
V
, DRAIN SUPPLY VOLTAGE (Vdc)
DD
Figure 10. DC Safe Operating Area
Figure 11. Capacitance versus
Drain Source Voltage
60
50
40
30
11
10
9
45
G
ps
40
FUNDAMENTAL
35
20
10
η
V
= 26 Vdc
DD
out
8
30
0
P
= 30 W (PEP), I = 200 mA
DQ
−10
−ꢁ20
−ꢁ30
−ꢀ40
−ꢀ50
−ꢁ60
−70
−ꢁ80
−ꢁ90
3rd Order
Two−Tone
Frequency Delta = 100 kHz
3.0
2.0
7
−32
6
IMD
V
= 26 Vdc
= 1.8 Adc
5
−36
−40
DD
I
DQ
f = 2000.0 MHz
4
3
1
VSWR
f = 2000.1 MHz
2
1.0
0
5
10 15 20 25 30 35 40 45 50 55 60
P , INPUT POWER (dBm)
1920
1940
1960
1980
2000
f, FREQUENCY (MHz)
in
Figure 12. Class A Third Order Intercept Point
Figure 13. 1920-2000 MHz Broadband Circuit Performance
1.E+10
1.E+09
1.E+08
1.E+07
1.E+06
1.E+05
1.E+04
0
50
100
150
200
250
T , JUNCTION TEMPERATURE (°C)
J
2
This graph displays calculated MTTF in hours x ampere drain current.
Life tests at elevated temperature have correlated to better than 10%
2
of the theoretical prediction for metal failure. Divide MTTF factor by I
for MTTF in a particular application.
D
Figure 14. MTTF Factor versus Junction Temperature
MRF284LR1 MRF284LSR1
RF Device Data
Freescale Semiconductor
8
1800 MHz
1800 MHz
Z
load
f = 2000 MHz
Z
source
Z = 5 Ω
o
f = 2000 MHz
V
= 26 V, I = 200 mA, P = 15 W Avg.
DQ out
CC
f
Z
Z
load
source
MHz
Ω
Ω
1800
1860
1900
1960
2000
1.0 - j0.4
1.0 - j0.8
1.0 - j1.1
1.0 - j1.4
1.0 - j2.3
2.1 + j0.4
2.2 - j0.2
2.3 - j0.5
2.5 - j0.9
2.6 - j0.92
Z
Z
=
Test circuit impedance as measured from
gate to ground.
source
=
Test circuit impedance as measured
from drain to ground.
load
Output
Matching
Network
Device
Under Test
Input
Matching
Network
Z
Z
source
load
Figure 15. Series Equivalent Source and Load Impedence
MRF284LR1 MRF284LSR1
RF Device Data
Freescale Semiconductor
9
NOTES
MRF284LR1 MRF284LSR1
RF Device Data
Freescale Semiconductor
10
PACKAGE DIMENSIONS
2X
Q
M
M
M
B
NOTES:
1. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M−1994.
G
1
aaa
T A
B
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
3
INCHES
DIM MIN MAX
MILLIMETERS
B
MIN
20.19
5.72
3.18
5.33
1.40
0.10
MAX
20.45
5.97
4.45
5.59
1.65
0.15
2
(FLANGE)
A
B
0.795
0.225
0.125
0.210
0.055
0.004
0.805
0.235
0.175
0.220
0.065
0.006
2X K
2X D
bbb
C
M
M
M
T A
B
R
D
(LID)
E
F
M
M
M
B
ccc
T A
G
0.562 BSC
14.28 BSC
H
0.077
0.220
0.355
0.357
0.125
0.227
0.225
0.087
0.250
0.365
0.363
0.135
0.233
0.235
1.96
5.59
9.02
9.07
3.18
5.77
5.72
2.21
6.35
9.27
9.22
3.43
5.92
5.97
F
K
H
M
M
M
B
M
ccc
T A
N
N
(LID)
Q
C
E
R
S
aaa
bbb
ccc
0.005 REF
0.010 REF
0.015 REF
0.13 REF
0.25 REF
0.38 REF
S
(INSULATOR)
M
M
M
B
aaa
T A
SEATING
PLANE
T
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
M
M
M
B
bbb
T A
M
(INSULATOR)
CASE 360B-05
ISSUE G
A
A
NI-360
MRF284LR1
A
A
(FLANGE)
B
B
1
2
NOTES:
1. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
2X K
(FLANGE)
2X D
M
M
M
bbb
T A
B
INCHES
DIM MIN MAX
MILLIMETERS
R
MIN
9.53
5.72
2.67
5.33
0.89
0.10
1.45
2.16
9.02
9.07
5.77
5.72
MAX
9.78
5.97
3.94
5.59
1.14
0.15
1.70
2.92
9.27
9.22
5.92
5.97
(LID)
A
B
0.375
0.225
0.105
0.210
0.035
0.004
0.057
0.085
0.355
0.357
0.227
0.225
0.385
0.235
0.155
0.220
0.045
0.006
0.067
0.115
0.365
0.363
0.23
M
M
M
ccc
T A
B
C
N
F
D
(LID)
H
E
M
M
M
B
ccc
T A
F
H
K
E
M
N
C
S
R
(INSULATOR)
S
0.235
aaa
bbb
ccc
0.005 REF
0.010 REF
0.015 REF
0.13 REF
0.25 REF
0.38 REF
M
M
M
B
aaa
T A
SEATING
PLANE
PIN 3
T
M
(INSULATOR)
STYLE 1:
M
M
M
bbb
T A
B
PIN 1. DRAIN
2. GATE
3. SOURCE
CASE 360C-05
ISSUE E
NI-360S
MRF284LSR1
MRF284LR1 MRF284LSR1
RF Device Data
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Document Number: MRF284
Rev. 17, 5/2006
相关型号：
MRF284LR1
S BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, NI-360, CASE 360B-05, 2 PIN
ROCHESTER
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