MRF282Z [MOTOROLA]
LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs; 横向N沟道宽带射频功率MOSFET
| 型号： | MRF282Z |
| 厂家： | 
MOTOROLA |
| 描述： | LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs |
| 文件： | 总11页 (文件大小：146K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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by MRF282/D
SEMICONDUCTOR TECHNICAL DATA
The RF Sub–Micron MOSFET Line
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for class A and class AB PCN and PCS base station applications at
frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier
amplifier applications.
10 W, 2000 MHz, 26 V
LATERAL N–CHANNEL
BROADBAND
•
Specified Two–Tone Performance @ 2000 MHz, 26 Volts
Output Power = 10 Watts (PEP)
Power Gain = 11 dB
RF POWER MOSFETs
Efficiency = 30%
Intermodulation Distortion = –30 dBc
•
•
Specified Single–Tone Performance @ 2000 MHz, 26 Volts
Output Power = 10 Watts (CW)
Power Gain = 11 dB
Efficiency = 40%
Characterized with Series Equivalent Large–Signal
Impedance Parameters
CASE 458–03, STYLE 1
(MRF282S)
•
•
•
S–Parameter Characterization at High Bias Levels
Excellent Thermal Stability
Capable of Handling 10:1 VSWR, @ 26 Vdc,
2000 MHz, 10 Watts (CW) Output Power
CASE 458A–01, STYLE 1
(MRF282Z)
•
Gold Metallization for Improved Reliability
MAXIMUM RATINGS
Rating
Symbol
Value
65
Unit
Vdc
Vdc
Drain–Source Voltage
Gate–Source Voltage
V
DSS
V
GS
±20
Total Device Dissipation @ T = 25°C
Derate above 25°C
P
D
60
0.34
Watts
W/°C
C
Storage Temperature Range
Operating Junction Temperature
T
–65 to +150
200
°C
°C
stg
T
J
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
Max
Unit
R
2.9
°C/W
θJC
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(V = 0, I = 10 µAdc)
V
65
—
—
—
—
—
—
Vdc
µAdc
µAdc
(BR)DSS
GS
Zero Gate Voltage Drain Current
(V = 28 Vdc, V = 0)
D
I
1.0
1.0
DSS
GSS
DS
Gate–Source Leakage Current
(V = 20 Vdc, V = 0)
GS
I
GS
DS
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 1
Motorola, Inc. 1997
ELECTRICAL CHARACTERISTICS continued (T = 25°C unless otherwise noted)
C
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
Gate Threshold Voltage
V
2.0
—
3.0
0.4
0.7
4.0
4.0
0.6
—
Vdc
Vdc
S
GS(th)
(V
DS
= 10 Vdc, I = 50 µAdc)
D
Drain–Source On–Voltage
(V = 10 Vdc, I = 0.5 Adc)
V
DS(on)
GS
Forward Transconductance
(V = 10 Vdc, I = 0.5 Adc)
D
g
fs
0.5
3.0
DS
Gate Quiescent Voltage
(V = 26 Vdc, I = 75 mAdc)
D
V
5.0
Vdc
GS(q)
DS
D
DYNAMIC CHARACTERISTICS
Input Capacitance
C
—
—
—
15
8.0
—
—
—
pF
pF
pF
iss
(V
DS
= 26 Vdc, V
= 0, f = 1.0 MHz)
GS
Output Capacitance
(V = 26 Vdc, V
C
oss
= 0, f = 1.0 MHz)
DS
GS
Reverse Transfer Capacitance
(V = 26 Vdc, V = 0, f = 1.0 MHz)
C
0.45
rss
DS
GS
FUNCTIONAL TESTS (In Motorola Test Fixture)
Common–Source Power Gain
G
11
30
—
10
11
—
—
10
12.6
34
—
—
dB
%
ps
(V
DD
= 26 Vdc, P
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
= 10 W (PEP), I
= 75 mA,
= 75 mA,
= 75 mA,
= 75 mA,
= 75 mA,
= 75 mA,
= 75 mA,
= 75 mA,
out
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
Drain Efficiency
η
(V
DD
= 26 Vdc, P
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
= 10 W (PEP), I
out
Intermodulation Distortion
I
–32.5
14
–30
—
dBc
dB
dB
%
MD
(V
DD
= 26 Vdc, P
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
= 10 W (PEP), I
out
Input Return Loss
I
RL
(V
DD
= 26 Vdc, P
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
= 10 W (PEP), I
out
Common–Source Power Gain
G
12.6
30
—
ps
(V
DD
= 26 Vdc, P
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
= 10 W (PEP), I
out
Drain Efficiency
η
—
(V
DD
= 26 Vdc, P
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
= 10 W (PEP), I
out
Intermodulation Distortion
I
–32.5
14
—
dBc
dB
MD
(V
DD
= 26 Vdc, P
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
= 10 W (PEP), I
out
Input Return Loss
I
—
RL
(V
DD
= 26 Vdc, P
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
= 10 W (PEP), I
out
Common–Source Power Gain
G
11
40
12.3
45
—
—
dB
%
ps
(V
DD
= 26 Vdc, P
= 10 W CW, I
= 10 W CW, I
= 10 W CW, I
= 75 mA, f = 2000.0 MHz)
= 75 mA, f = 2000.0 MHz)
= 75 mA,
out
out
DQ
DQ
DQ
Drain Efficiency
(V = 26 Vdc, P
η
DD
Output Mismatch Stress
(V = 26 Vdc, P
Ψ
DD
out
No Degradation In Output Power
f1 = 2000.0 MHz, f2 = 2000.1 MHz, Load VSWR = 10:1,
All Phase Angles at Frequency of Test)
MRF282S MRF282Z
2
MOTOROLA RF DEVICE DATA
B4
R4
B5
R5
B6
R6
B1
R1
B2
R2
B3
R3
C8
C9
C10
C11
V
GG
V
DD
+
+
C1
C3
C5
C14
C15
C17
L3
Z7
Z8
Z9
Z10
L2
RF
OUTPUT
C16
Z6
Z1
Z2
Z3
Z4
Z5
RF
INPUT
C13
C12
L4
DUT
C6
C7
C2
C4
L1
B1, B2, B3,
B4, B5, B6
C1, C17
C2, C4, C12
C3, C15
C5, C14
C6, C8, C10, C13
C7
C9, C11
C16
L1
L2
L3
Ferrite Bead, Ferroxcube, 56–590–65–3B
R1, R2, R3,
R4, R5, R6
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
Z10
Board
12 Ω, 0.2 W Chip Resistor, Rohm
470 µF, Electrolytic Capacitor, Mallory
0.6–4.5 pF, Variable Capacitor, Johanson
0.1 µF, Chip Capacitor, Kemet
1000 pF, B Case Chip Capacitor, ATC
12 pF, B Case Chip Capacitor, ATC
1.8 pF, B Case Chip Capacitor, ATC
100 pF, B Case Chip Capacitor, ATC
0.4–2.5 pF, Variable Capacitor, Johanson
Straight Wire, 21 AWG, 0.3″
0.155″ x 0.08″ Microstrip
0.280″ x 0.08″ Microstrip
0.855″ x 0.08″ Microstrip
0.483″ x 0.08″ Microstrip
0.200″ x 0.330″ Microstrip
0.220″ x 0.330″ Microstrip
0.490″ x 0.330″ Microstrip
0.510″ x 0.08″ Microstrip
0.990″ x 0.08″ Microstrip
0.295″ x 0.08″ Microstrip
8 Turns, 0.042″ ID, 24 AWG, Enamel
9 Turns, 0.046″ ID, 26 AWG, Enamel
3 Turns, 0.048″ ID, 25 AWG, Enamel
35 Mils Glass Teflon , Arlon GX–300,
ε = 2.55
L4
r
Input/Output Connectors Type N Flange Mount
Figure 1. Schematic of 1.93 – 2.0 GHz Broadband Test Circuit
MOTOROLA RF DEVICE DATA
MRF282S MRF282Z
3
R1
B1
R2
B2
R3
B3
R4
B5
R5
B4
R6
B6
DC
SUPPLY
+
+
+
V
+
GG
(BIAS)
V
DD
C1
C4
C7
C5
C8
C14
C11
C10
C13
C16
–
–
L4
L5
L3
Z6
L1
L2
DUT
Z8
Z9
Z10
Z11
RF
OUTPUT
Z1
Z2
Z3
Z4
C3
Z5
Z7
C6
RF
INPUT
C15
C17
C12
C9
C2
B1, B2, B3,
B4, B5, B6
C1, C16
C2, C9, C12
C3
Ferrite Bead, Fair Rite, (2743021446)
470 µF, 63 V, Electrolytic Capacitor, Mallory
0.6–4.5 pF, Variable Capacitor, Johanson Gigatrim
0.8–4.5 pF, Variable Capacitor, Johanson Gigatrim
0.1 µF, Chip Capacitor
R1, R2, R3,
12 Ω, 1/8 W Fixed Film Chip Resistor,
0.08″ x 0.13″
R4, R5, R6
W1, W2
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
Z10
Z11
Board
Berrylium Copper, 0.010″ x 0.110
0.122″ x 0.08″ Microstrip
0.650″ x 0.08″ Microstrip
0.160″ x 0.08″ Microstrip
0.030″ x 0.08″ Microstrip
0.045″ x 0.08″ Microstrip
0.291″ x 0.08″ Microstrip
0.483″ x 0.330″ Microstrip
0.414″ x 0.330″ Microstrip
0.392″ x 0.08″ Microstrip
0.070″ x 0.08″ Microstrip
1.110″ x 0.08″ Microstrip
″ x 0.210″
C4, C13
C5, C14
100 pF, B Case Chip Capacitor, ATC
C6, C8, C11, C15 12 pF, B Case Chip Capacitor, ATC
C7, C10
C17
1000 pF, B Case Chip Capacitor, ATC
0.1 pF, B Case Chip Capacitor, ATC
3 Turns, 27 AWG, 0.087″ OD, 0.050″ ID,
0.053″ Long, 6.0 nH
5 Turns, 27 AWG, 0.087″ OD, 0.050″ ID,
0.091″ Long, 15 nH
9 Turns, 26 AWG, 0.080″ OD, 0.046″ ID,
0.170″ Long, 30.8 nH
4 Turns, 27 AWG, 0.087″ OD, 0.050″ ID,
0.078″ Long, 10 nH
L1
L2
L3, L4
L5
1 = 0.03 Glass Teflon , Arlon GX–0300–55–22,
ε = 2.55
2 oz Copper, 3 x 5″ Dimenson, 0.030″,
r
Figure 2. Schematic of 1.81 – 1.88 GHz Broadband Test Circuit
MRF282S MRF282Z
4
MOTOROLA RF DEVICE DATA
V
GG
+
C1
R1
R5
V
DD
R2
R3
Q1
Q2
R4
B2
R9
B3
B1
R8
R6
V
C13
C14
DD
+
+
R7
C2
C4
C5
C6
C8
C9
R10
C16
C18 C20
L2
L1
DUT
Z5
Z6
Z7
Z8
Z9
RF
Z1
Z2
Z3
Z4
OUTPUT
RF
INPUT
C17
C19
C15
C11
C12
C7
C3
C10
B1, B2, B3,
C1, C20
C2
C3, C10, C15
C4, C16
C5
C6, C7, C9,
C14, C17
C8, C13
C11, C12
C18
C19
L1
L2
Q1
Q2
R1
Ferrite Bead, Ferroxcube, 56–590–65–3B
R2
R3
R4, R6, R7
1.0 kΩ, 1/2 W Potentiometer
13
Ω, Axial, 1/4 W Resistor
470 µF, 63 V, Electrolytic Capacitor, Mallory
0.01 µF, B Case Chip Capacitor, ATC
0.6–4.5 pF, Variable Capacitor, Johanson
0.02 µF, B Case Chip Capacitor, ATC
100 µF, 50 V, Electrolytic Capacitor, Sprague
12 pF, B Case Chip Capacitor, ATC
k
390 Ω, 1/8 W Chip Resistor, Rohm
1.0 Ω, 10 W 1% Resistor, DALE
12 Ω, 1/8 W Chip Resistor, Rohm
0.624″ x 0.08″ Microstrip
0.725″ x 0.08″ Microstrip
0.455″ x 0.08″ Microstrip
0.530″ x 0.330″ Microstrip
0.280″ x 0.330″ Microstrip
0.212″ x 0.330″ Microstrip
0.408″ x 0.08″ Microstrip
0.990″ x 0.08″ Microstrip
0.295″ x 0.08″ Microstrip
R5
R8, R9, R10
Z1
Z2
Z3
Z4
Z5
Z6
Z7
51 pF, B Case Chip Capacitor, ATC
0.3 pF, B Case Chip Capacitor, ATC
0.1 µF, Chip Capacitor, Kemet
0.4–2.5 pF, Variable Capacitor, Johanson
8 Turns, 0.042″ ID, 24 AWG, Enamel
9 Turns, 0.046″ ID, 26 AWG, Enamel
NPN, 15 W, Bipolar Transistor, MJD310
PNP, 15 W, Bipolar Transistor, MJD320
200 Ω, Axial, 1/4 W Resistor
Z8
Z9
Board
Input/Output
35 Mils Glass Teflon , Arlon GX–0300, ε = 2.55
Type N Flange Mount RF55–22, Connectors,
Omni Spectra
r
Figure 3. Schematic of Class A Test Circuit
MOTOROLA RF DEVICE DATA
MRF282S MRF282Z
5
TYPICAL CHARACTERISTICS
16
14
12
10
8
14
13
12
11
10
14
12
0.8 W
0.5 W
P
out
10
8
G
ps
6
4
P
= 0.2 W
in
V
I
= 26 Vdc
= 75 mA
6
4
DD
DQ
V
I
= 26 Vdc
= 75 mA
DD
DQ
2
f = 2000 MHz Single Tone
Single Tone
0
0.0
0.25
0.5
0.75
1.0
1800
1850
1900
f, FREQUENCY (MHz)
1950
2000
P
, INPUT POWER (WATTS)
in
Figure 4. Output Power & Power Gain
versus Input Power
Figure 5. Output Power versus Frequency
13
12
11
10
9
–15
– 10
– 20
– 30
– 40
V
I
= 26 Vdc
= 75 mA
= 2000.0 MHz
= 2000.1 MHz
DD
DQ
G
ps
f
f
–20
–25
–30
–35
–40
1
2
3rd Order
– 50
– 60
IMD
P
I
= 10 W (PEP)
= 75 mA
out
DQ
5th Order
7th Order
f1 = 2000.0 MHz
f2 = 2000.1 MHz
– 70
8
16
0.1
1.0
10
18
20
22
24
26
28
P
, OUTPUT POWER (WATTS) PEP
V , DRAIN SUPPLY VOLTAGE (Vdc)
DD
out
Figure 6. Intermodulation Distortion
versus Output Power
Figure 7. Power Gain and Intermodulation
Distortion versus Supply Voltage
– 10
– 20
– 30
– 40
– 50
– 60
14
V
= 26 Vdc
= 2000.0 MHz
= 2000.1 MHz
DD
I
= 125 mA
DQ
f
f
1
2
13
12
11
10
9
100 mA
25 mA
75 mA
50 mA
50 mA
100 mA
I
= 125 mA
DQ
V
= 26 Vdc
= 2000.0 MHz
= 2000.1 MHz
DD
25 mA
75 mA
f
f
1
2
0.1
1.0
10
0.1
1.0
, OUTPUT POWER (WATTS) PEP
10
P
, OUTPUT POWER (WATTS) PEP
P
out
out
Figure 8. Intermodulation Distortion
versus Output Power
Figure 9. Power Gain versus Output Power
MRF282S MRF282Z
6
MOTOROLA RF DEVICE DATA
2
1.5
1
100
10
T
= 75°C
flange
C
iss
C
oss
T
= 100°C
flange
1.0
0.1
.5
C
rss
T
= 175
8
°C
J
0
0
4
12
16
20
24
28
0
4
8
12
16
20
24
28
V
, DRAIN SUPPLY VOLTAGE (Vdc)
V , DRAIN SOURCE VOLTAGE (VOLTS)
DS
DD
Figure 10. Class A DC Safe Operating Area
Figure 11. Capacitance versus
Drain Source Voltage
60
14
13
39
P
V
I
= 10 W (PEP)
= 26 Vdc
= 75 mA
out
DD
DQ
G
ps
50
40
TOI POINT
FUNDAMENTAL
38
37
36
30
20
10
12
3rd Order
0
η
–10
–20
V
= 26 Vdc
1.6:1
1.4:1
1.2:1
DD
11
10
I
f
f
= 600 mAdc
= 2000.0 MHz
= 2000.1 MHz
D
1
2
VSWR
–30
–40
35
2000
10
20
30
40
1930
1940
1950
1970
f, FREQUENCY MHz)
1990
1960
1980
P
, INPUT POWER (dBm)
in
Figure 13. Performance in Broadband Circuit
Figure 12. Class A Third Order Intercept Point
1.E+09
1.E+08
1.E+07
1.E+06
1.E+05
1.E+04
1.E+03
0
50
100
150
200
250
T , JUNCTION TEMPERATURE (
°C)
J
2
This graph displays calculated MTBF in hours x ampere drain cur-
ent. Life tests at elevated temperature have correlated to better than
±
10% of the theoretical prediction for metal failure. Divide MTBF
2
factor by I
for MTBF in a particular application.
D
Figure 14. MTBF Factor versus
Junction Temperature
MOTOROLA RF DEVICE DATA
MRF282S MRF282Z
7
+ j1
+ j0.5
+ j2
+ j3
Z
in
2 GHz
Z
= 5 Ω
o
+ j0.2
+ j5
+ j10
Z
*
OL
f = 1.8 GHz
2 GHz
0.2
0.5
1
2
3
5
0.0
1.8 GHz
– j10
– j5
– j0.2
– j3
– j2
– j0.5
– j1
V
= 26 V, I
= 75 mA, P
= 10 W (PEP)
out
CC
CQ
f
Z
(1)
Ω
Z
OL
Ω
*
in
MHz
1800
1860
1900
1960
2000
2.1 + j1.0
2.05 + j1.15
2.0 + j1.2
3.8 – j0.15
3.77 – j0.13
3.75 – j0.1
3.65 + j0.1
3.55 + j0.2
1.9 + j1.4
1.85 + j1.6
Z (1)= Conjugate of fixture gate terminal impedance.
in
Z
OL
* = Conjugate of the optimum load impedance at
given output power, voltage, IMD, bias current
and frequency.
Figure 15. Series Equivalent Input and Output Impedence
MRF282S MRF282Z
8
MOTOROLA RF DEVICE DATA
Table 1. Common Source S–Parameters at V
= 24 Vdc, I = 600 mAdc
D
DS
f
S
S
S
S
22
11
21
12
GHz
|S
|
11
|S
|
21
|S
|
12
|S
|
22
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2.0
2.1
2.2
2.3
2.4
2.5
2.6
0.916
0.850
0.843
0.848
0.861
0.872
0.882
0.895
0.901
0.902
0.909
0.917
0.923
0.931
0.933
0.934
0.937
0.938
0.942
0.943
0.946
0.950
0.953
0.954
0.955
0.961
-81
33.41
20.81
14.45
10.61
8.34
6.61
5.43
4.54
3.82
3.27
2.83
2.48
2.18
1.94
1.73
1.55
1.40
1.27
1.16
1.06
0.98
0.92
0.86
0.80
0.76
0.71
128
101
84
73
63
55
47
41
34
29
24
19
14
10
6
0.016
0.020
0.020
0.019
0.017
0.015
0.013
0.011
0.009
0.008
0.006
0.006
0.006
0.006
0.005
0.007
0.009
0.010
0.011
0.014
0.016
0.019
0.019
0.020
0.020
0.024
41
16
2
0.498
0.499
0.532
0.552
0.609
0.647
0.675
0.728
0.740
0.773
0.794
0.813
0.826
0.842
0.853
0.859
0.869
0.869
0.874
0.876
0.884
0.897
0.903
0.907
0.907
0.912
-60
-88
-118
-135
-144
-151
-154
-158
-160
-163
-164
-166
-168
-169
-171
-172
-174
-175
-176
-177
-178
-178
-179
-180
179
-106
-117
-125
-132
-139
-145
-150
-160
-164
-168
-172
-176
-179
177
174
171
169
166
163
160
157
154
151
149
-7
-15
-19
-23
-24
-24
-18
-6
10
14
15
43
60
60
63
71
73
71
67
63
62
65
69
2
-1
-4
-7
-10
-12
-15
-18
-21
-24
-26
178
177
MOTOROLA RF DEVICE DATA
MRF282S MRF282Z
9
PACKAGE DIMENSIONS
A
1
U 4 PL
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3
B
P
INCHES
MIN
MILLIMETERS
W4 PL
DIM
A
B
C
D
E
H
J
K
N
P
MAX
0.203
0.163
0.110
0.053
0.010
0.031
0.010
0.100
0.183
0.143
0.005
0.040
0.023
MIN
5.00
3.99
2.16
1.19
0.15
0.64
0.15
1.52
4.50
3.48
0.00
0.76
0.43
MAX
5.16
4.14
2.79
1.35
0.25
0.79
0.25
2.54
4.65
3.63
0.13
1.02
0.58
0.197
0.157
0.085
0.047
0.006
0.025
0.006
0.060
0.177
0.137
0.000
0.030
0.017
K 2 PL
V 4 PL
2
D 2 PL
U
V
W
E
C
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
J
H
N
CASE 458–03
ISSUE C
(MRF282S)
J
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
S
1
U 4 PL
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION –H– (PACKAGE COPLANARITY): THE
BOTTOM OF THE LEADS AND REFERENCE
PLANE –T– MUST BE COPLANAR WITHIN
DIMENSION –H–.
Y
3
P
B
INCHES
MIN
MILLIMETERS
W4 PL
DIM
A
B
C
D
E
H
J
K
N
P
S
U
V
W
Y
MAX
0.203
0.163
0.110
0.053
0.010
0.004
0.010
0.080
0.183
0.143
0.040
0.005
0.040
0.023
0.040
MIN
5.00
3.99
2.16
1.19
0.15
0.00
0.15
1.27
4.50
3.48
0.51
0.00
0.76
0.43
0.76
MAX
5.16
4.14
2.79
1.35
0.25
0.10
0.25
2.03
4.65
3.63
1.02
0.13
1.02
0.58
1.02
0.197
0.157
0.085
0.047
0.006
0.000
0.006
0.050
0.177
0.137
0.020
0.000
0.030
0.017
0.030
K 2 PL
V 4 PL
2
D 2 PL
E
C
H
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
N
CASE 458A–01
ISSUE O
(MRF282Z)
MRF282S MRF282Z
10
MOTOROLA RF DEVICE DATA
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specificallydisclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola
datasheetsand/orspecificationscananddovaryindifferentapplicationsandactualperformancemayvaryovertime. Alloperatingparameters,including“Typicals”
must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of
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and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
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MRF282/D
相关型号：
MRF284LR1
S BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, NI-360, CASE 360B-05, 2 PIN
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