MRF282ZR1 [FREESCALE]
RF Power Field Effect Transistors; 射频功率场效应晶体管
| 型号： | MRF282ZR1 |
| 厂家： | 
Freescale |
| 描述： | RF Power Field Effect Transistors |
| 文件： | 总12页 (文件大小：299K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Document Number: MRF282
Rev. 15, 5/2006
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
MRF282SR1
MRF282ZR1
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for Class A and Class AB PCN and PCS base station applications
with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and
multicarrier amplifier applications.
• Specified Two-Tone Performance @ 2000 MHz, 26 Volts
Output Power — 10 Watts PEP
Power Gain — 10.5 dB
2000 MHz, 10 W, 26 V
LATERAL N-CHANNEL
BROADBAND
Efficiency — 28%
Intermodulation Distortion — -31 dBc
RF POWER MOSFETs
• Specified Single-Tone Performance @ 2000 MHz, 26 Volts
Output Power — 10 Watts CW
Power Gain — 9.5 dB
Efficiency — 35%
• Capable of Handling 10:1 VSWR, @ 26 Vdc,
2000 MHz, 10 Watts CW Output Power
Features
CASE 458B-03, STYLE 1
NI-200S
• Excellent Thermal Stability
• Characterized with Series Equivalent Large-Signal
MRF282SR1
Impedance Parameters
• RoHS Compliant
• Available in Tape and Reel. R1 Suffix = 500 Units per 12 mm, 7 inch Reel.
CASE 458C-03, STYLE 1
NI-200Z
MRF282ZR1
Table 1. Maximum Ratings
Rating
Symbol
Value
-0.5, +65
20
Unit
Vdc
Vdc
Drain-Source Voltage
Gate-Source Voltage
V
DSS
V
GS
Total Device Dissipation @ T = 25°C
Derate above 25°C
P
60
0.34
W
W/°C
C
D
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
T
- 65 to +150
150
°C
°C
°C
stg
T
C
T
200
J
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
R
θ
JC
4.2
°C/W
Table 3. Electrical Characteristics (T = 25°C unless otherwise noted)
C
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Drain-Source Breakdown Voltage
(V = 0, I = 10 μAdc)
V
65
—
—
—
—
—
—
Vdc
μAdc
μAdc
(BR)DSS
GS
D
Zero Gate Voltage Drain Current
(V = 28 Vdc, V = 0)
I
1.0
1.0
DSS
DS
GS
Gate-Source Leakage Current
(V = 20 Vdc, V = 0)
I
GSS
GS
DS
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
© Freescale Semiconductor, Inc., 2006. All rights reserved.
Table 3. Electrical Characteristics (T = 25°C unless otherwise noted) (continued)
C
Characteristic
Symbol
Min
Typ
Max
Unit
On Characteristics
Gate Threshold Voltage
V
2.0
—
3.0
0.4
4.0
4.0
0.6
5.0
Vdc
Vdc
Vdc
GS(th)
(V = 10 Vdc, I = 50 μAdc)
DS
D
Drain-Source On-Voltage
(V = 10 Vdc, I = 0.5 Adc)
V
DS(on)
GS
D
Gate Quiescent Voltage
(V = 26 Vdc, I = 75 mAdc)
V
3.0
GS(q)
DS
D
Dynamic Characteristics
Input Capacitance
(V = 26 Vdc, V = 0, f = 1.0 MHz)
DS
C
—
—
—
15
8.0
—
—
—
pF
pF
pF
iss
GS
Output Capacitance
(V = 26 Vdc, V = 0, f = 1.0 MHz)
C
oss
DS
GS
Reverse Transfer Capacitance
(V = 26 Vdc, V = 0, f = 1.0 MHz)
C
rss
0.45
DS
GS
Functional Tests (In Freescale Test Fixture)
Common-Source Power Gain
G
10.5
28
11.5
—
—
—
dB
%
ps
(V = 26 Vdc, P = 10 W PEP, I = 75 mA,
DD
out
DQ
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
Drain Efficiency
η
(V = 26 Vdc, P = 10 W PEP, I = 75 mA,
DD
out
DQ
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
Intermodulation Distortion
IMD
IRL
—
-31
-14
11.5
—
-28
-9
dBc
dB
dB
%
(V = 26 Vdc, P = 10 W PEP, I = 75 mA,
DD
out
DQ
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
Input Return Loss
—
(V = 26 Vdc, P = 10 W PEP, I = 75 mA,
DD
out
DQ
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
Common-Source Power Gain
G
ps
10.5
28
—
(V = 26 Vdc, P = 10 W PEP, I = 75 mA,
DD
out
DQ
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
Drain Efficiency
η
—
(V = 26 Vdc, P = 10 W PEP, I = 75 mA,
DD
out
DQ
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
Intermodulation Distortion
IMD
IRL
—
-31
-14
-28
-9
dBc
dB
(V = 26 Vdc, P = 10 W PEP, I = 75 mA,
DD
out
DQ
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
Input Return Loss
—
(V = 26 Vdc, P = 10 W PEP, I = 75 mA,
DD
out
DQ
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
Common-Source Power Gain
G
9.5
35
11.5
40
—
—
dB
%
ps
(V = 26 Vdc, P = 10 W CW, I = 75 mA, f = 2000.0 MHz)
DD
out
DQ
Drain Efficiency
η
(V = 26 Vdc, P = 10 W CW, I = 75 mA, f = 2000.0 MHz)
DD
out
DQ
MRF282SR1 MRF282ZR1
RF Device Data
Freescale Semiconductor
2
R5
B3
R2
B1
R3
B2
Z6
B4
Z12
C10
R4
V
GG
V
DD
+
C3
+
C4
C5
C7
C8
C11
C13
C16
R1
C18
RF
OUTPUT
Z11
Z13
Z5
Z7
RF
INPUT
Z9
Z10
Z14
Z15
Z16
Z8
Z1
Z2
Z3
Z4
C15
C6
C17
C12
C14
DUT
C1
C2
C9
Z1
0.491″ x 0.080″ Microstrip
0.253″ x 0.080″ Microstrip
0.632″ x 0.080″ Microstrip
0.567″ x 0.080″ Microstrip
1.139″ x 0.055″ Microstrip
0.236″ x 0.055″ Microstrip
0.180″ x 0.325″ Microstrip
0.301″ x 0.325″ Microstrip
0.439″ x 0.325″ Microstrip
0.055″ x 0.325″ Microstrip
Z11
Z12
Z13
Z14
Z15
Z16
0.636″ x 0.055″ Microstrip
0.303″ x 0.055″ Microstrip
0.463″ x 0.080″ Microstrip
0.105″ x 0.080″ Microstrip
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
Z10
0.452″ 0.085″ x 0.080″ Microstrip
0.910″ 0.085″ x 0.080″ Microstrip
®
Raw Board
Material
0.030″ Glass Teflon , 2 oz Copper,
3″ x 5″ Dimensions,
Arlon GX0300-55-22, ε = 2.55
r
Figure 1. 1930 - 2000 MHz Broadband Test Circuit Schematic
Table 4. 1930 - 2000 MHz Broadband Test Circuit Component Designations and Values
Designators
Description
B1, B4
B2, B3
C1, C2, C9
C3
Surface Mount Ferrite Beads, 0.120″ x 0.333″ x 0.100″, Fair Rite #2743019446
Surface Mount Ferrite Beads, 0.120″ x 0.170″ x 0.100″, Fair Rite #2743029446
0.8-8.0 pF Variable Capacitors, Johanson Gigatrim #27291SL
10 mF, 35 V Tantalum Surface Mount Chip Capacitor, Kemet #T495X106K035AS4394
0.1 mF Chip Capacitors, Kemet #CDR33BX104AKWS
200 pF Chip Capacitor, ATC #100B201JCA500X
18 pF Chip Capacitor, ATC #100B180KP500X
C4, C5, C13, C16
C6
C7
C8
39 pF Chip Capacitor, ATC #100B390JCA500X
27 pF Chip Capacitor, ATC #100B270JCA500X
1.2 pF Chip Capacitor, ATC #100B1R2CCA500X
0.6-4.5 pF Variable Capacitor, Johanson Gigatrim #27271SL
0.5 pF Chip Capacitor, ATC #100B0R5BCA500X
15 pF Chip Capacitor, ATC #100B150JCA500X
0.1 pF Chip Capacitor, ATC #100B0R1BCA500X
22 mF, 35 V Tantalum Surface Mount Chip Capacitor, Kemet #T491X226K035AS4394
560 kΩ, 1/4 W Chip Resistor, 0.08″ x 0.13″
C10
C11
C12
C14
C15
C17
C18
R1
R2, R5
R3, R4
WS1, WS2
12 Ω, 1/4 W Chip Resistors, 0.08″ x 0.13″, Garrett Instruments #RM73B2B120JT
91 W, 1/4 W Chip Resistors, 0.08″ x 0.13″, Garrett Instruments #RM73B2B910JT
Beryllium Copper Wear Blocks 0.010″ x 0.235″ x 0.135″ NOM
Brass Banana Jack and Nut
Red Banana Jack and Nut
Green Banana Jack and Nut
Type “N” Jack Connectors, Omni-Spectra # 3052-1648-10
4-40 Ph Head Screws, 0.125″ Long
4-40 Ph Head Screws, 0.188″ Long
4-40 Ph Head Screws, 0.312″ Long
4-40 Ph Rec. Hd. Screws, 0.438″ Long
®
RF Circuit Board
3″ x 5″ Copper Clad PCB, Glass Teflon
MRF282SR1 MRF282ZR1
RF Device Data
Freescale Semiconductor
3
C18
C13
R1
C7
C4
C5
R2
B2
R5
B3
C8
B4
R3
R4
B1
C10
C11
C16
C3
C15
C6
WS1
WS2
C17
C14
C1
C2
C9
C12
MRF282
Rev-0
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
Figure 2. 1930 - 2000 MHz Broadband Test Circuit Component Layout
MRF282SR1 MRF282ZR1
RF Device Data
Freescale Semiconductor
4
R1
B1
R2
B2
R3
B3
R4
B5
R5
B4
R6
B6
+
C1
+
V
V
DD
GG
C4
C7
C5
C8
C14
C11
C10
C13
C16
RF
OUTPUT
RF
INPUT
L4
L5
L3
Z6
L1
Z2
L2
DUT
Z8
Z9
Z10
Z11
Z1
Z3
Z4
C3
Z5
Z7
C6
C15
C17
C12
C9
C2
Z1
Z2
Z3
Z4
Z5
Z6
Z7
0.122″ x 0.08″ Microstrip
0.650″ x 0.08″ Microstrip
0.160″ x 0.08″ Microstrip
0.030″ x 0.08″ Microstrip
0.045″ x 0.08″ Microstrip
0.291″ x 0.08″ Microstrip
0.483″ x 0.330″ Microstrip
Z8
Z9
0.414″ x 0.330″ Microstrip
0.392″ x 0.08″ Microstrip
0.070″ x 0.08″ Microstrip
Z10
Z11
Raw Board
Material
1.110″ x 0.08″ Microstrip
®
0.030″ Glass Teflon , 2 oz Copper,
3″ x 5″ Dimensions,
Arlon GX0300-55-22, ε = 2.55
r
Figure 3. 1810 - 1880 MHz Broadband Test Circuit Schematic
Table 5. 1810 - 1880 MHz Broadband Test Circuit Component Designations and Values
Designators
B1, B2, B3, B4, B5, B6
Description
Surface Mount Ferrite Beads, 0.120″ x 0.170″ x 0.100″, Fair Rite #2743029446
470 μF, 63 V Electrolytic Capacitors, Mallory #SME63UB471M12X25L
0.6-4.5 pF Variable Capacitors, Johanson Gigatrim #27271SL
0.8-8.0 pF Variable Capacitor, Johanson Gigatrim #27291SL
0.1 μF Chip Capacitors, Kemet #CDR33BX104AKWS
C1, C16
C2, C9, C12, C17
C3
C4, C13
C5, C14
C6, C8, C11, C15
C7, C10
L1
100 pF Chip Capacitors, ATC #100B101JCA500X
12 pF Chip Capacitors, ATC #100B120JCA500X
1000 pF Chip Capacitors, ATC #100B102JCA50X
3 Turns, 27 AWG, 0.087″ OD, 0.050″ ID, 0.053″ Long, 6.0 nH
5 Turns, 27 AWG, 0.087″ OD, 0.050″ ID, 0.091″ Long, 15 nH
9 Turns, 26 AWG, 0.080″ OD, 0.046″ ID, 0.170″ Long, 30.8 nH
4 Turns, 27 AWG, 0.087″ OD, 0.050″ ID, 0.078″ Long, 10 nH
12 Ω, 1/8 W Fixed Film Chip Resistors, Garrett Instruments #RM73B2B120JT
0.08″ x 0.13″ Resistors, Garrett Instruments #RM73B2B120JT
Beryllium Copper 0.010″ x 0.110″ x 0.210″
L2
L3, L4
L5
R1, R2, R3
R4, R5, R6
W1, W2
MRF282SR1 MRF282ZR1
RF Device Data
Freescale Semiconductor
5
V
SUPPLY
+
C1
R1
R2
R5
V
DD
Q1
Q2
R3
R4
B2
R9
B3
B1
R8
R6
V
DD
C13
C14
+
+
R7
C2
C4 C5
C6
C8
C9
R10
C16
C18 C20
L2
RF
OUTPUT
L1
DUT
RF
INPUT
Z5
Z6
Z7
Z8
Z9
Z1
C3
Z2
Z3
Z4
C17
C19
C15
C11 C12
C7
C10
Z1
Z2
Z3
Z4
Z5
Z6
0.624″ x 0.08″ Microstrip
0.725″ x 0.08″ Microstrip
0.455″ x 0.08″ Microstrip
0.530″ x 0.330″ Microstrip
0.280″ x 0.330″ Microstrip
0.212″ x 0.330″ Microstrip
Z7
Z8
Z9
0.408″ x 0.08″ Microstrip
0.990″ x 0.08″ Microstrip
0.295″ x 0.08″ Microstrip
®
Raw Board
Material
0.030″ Glass Teflon , 2 oz Copper,
3″ x 5″ Dimensions,
Arlon GX0300-55-22, ε = 2.55
r
Figure 4. Class A Broadband Test Circuit Schematic
Table 6. Class A Broadband Test Circuit Component Designations and Values
Designators
Description
B1, B2, B3
C1, C20
C2
Ferrite Beads, Ferroxcube #56-590-65-3B
470 μF, 63 V Electrolytic Capacitors, Mallory #SME63V471M12X25L
0.01 μF Chip Capacitor, ATC #100B103JCA50X
0.6-4.5 pF Variable Capacitors, Johanson #27271SL
0.02 μF Chip Capacitors, ATC #100B203JCA50X
100 μF, 50 V Electrolytic Capacitor, Mallory #SME50VB101M12X256
12 pF Chip Capacitors, ATC #100B120JCA500X
51 pF Chip Capacitors, ATC #100B510JCA500X
0.3 pF Chip Capacitors, ATC #100B0R3CCA500X
0.1 μF Chip Capacitor, Kemet #CDR33BX104AKWS
0.4-2.5 pF Variable Capacitor, Johanson #27285
8 Turns, 0.042″ ID, 24 AWG, Enamel
C3, C10, C15
C4, C16
C5
C6, C7, C9, C14, C17
C8, C13
C11, C12
C18
C19
L1
L2
9 Turns, 0.046″ ID, 26 AWG, Enamel
Q1
NPN, 15 W, Bipolar Transistor, MJD310
Q2
PNP, 15 W, Bipolar Transistor, MJD320
R1
200 Ω, 1/4 W Axial Resistor
R2
1.0 kΩ, 1/2 W Potentiometer, Bourns
R3
13 kΩ, 1/4 W Axial Resistor
R4, R6, R7
R5
390 Ω, 1/8 W Chip Resistors, Garrett Instruments #RM73B2B391JT
1.0 Ω, 10 W 1% Resistor, Dale #RE65G1R00
12 Ω, 1/8 W Chip Resistors, Garrett Instruments #RM73B2B120JT
Type N Flange Mount RF55-22 Connectors, Omni-Spectra
R8, R9, R10
Input/Output
MRF282SR1 MRF282ZR1
RF Device Data
Freescale Semiconductor
6
Z = 5 Ω
o
f = 2000 MHz
Z
in
f = 1800 MHz
Z
*
OL
f = 2000 MHz
f = 1800 MHz
V
= 26 V, I = 75 mA, P = 10 W (PEP)
DQ out
DD
f
Z
in
Z
OL
*
MHz
Ω
Ω
1800
1860
1900
1960
2000
2.1 + j1.0
2.05 + j1.15
2.0 + j1.2
3.8 - j0.15
3.77 - j0.13
3.75 - j0.1
3.65 + j0.1
3.55 + j0.2
1.9 + j1.4
1.85 + j1.6
Z
Z
= Complex conjugate of source impedance.
* = Complex conjugate of the optimum load
in
OL
impedance at given output power, voltage, IMD,
bias current and frequency.
Output
Device
Input
Matching
Network
Matching
Network
Under Test
Z
Z
*
OL
in
Figure 5. Series Equivalent Input and Output Impedence
MRF282SR1 MRF282ZR1
RF Device Data
Freescale Semiconductor
7
NOTES
MRF282SR1 MRF282ZR1
RF Device Data
Freescale Semiconductor
8
NOTES
MRF282SR1 MRF282ZR1
RF Device Data
Freescale Semiconductor
9
NOTES
MRF282SR1 MRF282ZR1
RF Device Data
Freescale Semiconductor
10
PACKAGE DIMENSIONS
M
M
M
B
ccc
T A
M
NOTES:
(INSULATOR)
1. CONTROLLING DIMENSIONS: INCHES.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M, 1994.
3. ALL DIMENSIONS ARE SYMMETRICAL ABOUT
CENTERLINE UNLESS OTHERWISE NOTED.
(LID)
R
1
M
M
M
ccc
T A
B
4X
Z
INCHES
DIM MIN MAX
MILLIMETERS
MIN
4.572
3.556
MAX
4.83
3.81
A
B
0.180
0.140
0.082
0.047
0.004
0.004
0.025
0.060
0.197
0.177
0.147
0.157
−−−
0.190
0.150
C
0.116 2.083
2.946
1.346
0.254
0.152
0.787
2.794
5.156
4.648
3.886
4.14
2X K
D
0.053
0.010
0.006
0.031
1.194
0.102
0.102
0.635
E
F
(INSULATOR)
S
H
B
M
M
M
ccc
T A
B
K
0.110 1.524
2
M
N
0.203
0.183
0.153
0.163
0.020
5.004
4.496
3.734
3.988
−−−
2X D
R
3
S
M
M
M
B
bbb
T A
B
B
Z
0.508
(FLANGE)
bbb
ccc
0.010 REF
0.015 REF
0.254 REF
0.381 REF
M
M
M
ccc
T A
STYLE 1:
N
PIN 1. DRAIN
2. GATE
3. SOURCE
(LID)
E
F
C
CASE 458B-03
ISSUE E
H
SEATING
PLANE
T
NI-200S
A
A
MRF282SR1
(FLANGE)
M
M
M
B
ccc
T A
F
M
NOTES:
Y
(INSULATOR)
1. CONTROLLING DIMENSIONS: INCHES.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M, 1994.
3. DIMENSION H (PACKAGE COPLANARITY): THE
BOTTOM OF LEADS AND REFERENCE PLANE T
MUST BE COPLANAR WITHIN DIMENSION H.
(LID)
R
S
4X
Z
M
M
M
M
ccc
T A
B
B
1
3
B
(INSULATOR)
INCHES
DIM MIN MAX
MILLIMETERS
MIN
(FLANGE)
MAX
4.830
3.810
2.946
1.346
0.254
0.152
0.102
2.286
5.156
4.648
3.886
4.140
1.016
M
M
ccc
T A
A
B
0.180
0.140
0.082
0.047
0.004
0.004
0.000
0.050
0.197
0.177
0.147
0.157
0.020
0.190 4.572
0.150 3.556
0.116 2.083
0.053 1.194
0.010 0.102
0.006 0.102
0.004 0.000
0.090 1.270
0.203 5.004
0.183 4.496
0.153 3.734
0.163 3.988
0.040 0.508
C
D
E
2
B
F
2X K
H
2X
D
K
M
N
M
M
M
bbb
T A
ccc
B
R
S
Y
M
M
M
T A
B
Z
−−− R .020
.010 REF
.015 REF
−−− R .508
0.254 REF
0.381 REF
bbb
ccc
N
(LID)
H
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
E
C
CASE 458C-03
ISSUE E
SEATING
PLANE
A
A
T
NI-200Z
(FLANGE)
MRF282ZR1
MRF282SR1 MRF282ZR1
RF Device Data
Freescale Semiconductor
11
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Document Number: MRF282
Rev. 15, 5/2006
相关型号：
MRF284LR1
S BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, NI-360, CASE 360B-05, 2 PIN
ROCHESTER
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