MGF0907B_11 [MITSUBISHI]
High-power GaAs FET (small signal gain stage); 高功率GaAs FET（小信号增益级）
| 型号： | MGF0907B_11 |
| 厂家： | 
Mitsubishi Group |
| 描述： | High-power GaAs FET (small signal gain stage) |
| 文件： | 总4页 (文件大小：160K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
< High-power GaAs FET (small signal gain stage) >
MGF0907B
L & S BAND / 10W
non - matched
DESCRIPTION
The MGF0907B, GaAs FET with an N-channel schottky
gate, is designed for use in UHF band amplifiers.
FEATURES
Class A operation
High output power
P1dB=40.0dBm(TYP.) @f=2.3GHz
High power gain
GLP=10.0dB(TYP.)
@f=2.3GHz
High power added efficiency
P.A.E =37%(TYP.)
@f=2.3GHz,P1dB
Hermetically sealed metal-ceramic package with ceramic lid
APPLICATION
For UHF Band power amplifiers
QUALITY
IG
RECOMMENDED BIAS CONDITIONS
Vds=10V Ids=2.4A Rg=50 Refer to Bias Procedure
Absolute maximum ratings (Ta=25C)
Symbol
Parameter
Ratings
Unit
V
VGDO Gate to drain voltage
-15
Gate to source
VGSO
ID
voltage
-15
V
Drain current
6
-20
A
IGR
IGF
Reverse gate current
Forward gate current
Total power dissipation
Cannel temperature
Storage temperature
mA
mA
W
42
PT*1
Tch
37.5
175
C
C
Tstg
-65 to +175
*1:Tc=25C
Electrical characteristics
(Ta=25C)
Symbol
Parameter
Test conditions
Limits
Typ.
4
Unit
Min.
Max.
Saturated drain current
Transconductance
VDS=3V,VGS=0V
-
6
-
A
S
IDSS
gm
VDS=3V,ID=2.2A
VDS=3V,ID=20mA
-
2
Gate to source cut-off voltage
-1
-2.5
40
-4
-
V
VGS(off)
P1dB
GLP
Output power at 1dB gain compression VDS=10V,ID(RF off)=2.4A
38.5
dBm
dB
A
f=2.3GHz
Linear Power Gain
Drain current
8
-
10
-
ID
2.2
37
3.0
-
P.A.E.
Rth(ch-c) *2
Power added efficiency
Thermal resistance
-
%
ΔVf method
-
-
4.0
C/W
*2 :Channel-case
Publication Date : Apr., 2011
1
< High-power GaAs FET (small signal gain stage) >
MGF0907B
L & S BAND / 10W
non - matched
MGF0907B TYPICAL CHARACTERISTICS( Ta=25deg.C )
ID vs. VGS
ID vs. VDS
Po, PAE vs. Pin
(f=2.3GHz)
GLP, P1dB, ID, PAE vs. VDS
(f=2.3GHz)
Publication Date : Apr., 2011
2
< High-power GaAs FET (small signal gain stage) >
MGF0907B
L & S BAND / 10W
non - matched
MGF0907B S-parameters( Ta=25deg.C , VDS=10(V),IDS=2.4(A) )
S11,S22 vs. f
S21,S12 vs. f
Publication Date : Apr., 2011
3
< High-power GaAs FET (small signal gain stage) >
MGF0907B
L & S BAND / 10W
non - matched
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Publication Date : Apr., 2011
4
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