MGF0911A [MITSUBISHI]
L, S BAND POWER GaAs FET; L， S波段功率GaAs FET
| 型号： | MGF0911A |
| 厂家： | 
Mitsubishi Group |
| 描述： | L, S BAND POWER GaAs FET |
| 文件： | 总3页 (文件大小：26K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MITSUBISHI SEMICONDUCTOR áGaAs FETñ
MGF0911A
L, S BAND POWER GaAs FET
DESCRIPTION
The MGF0911A, GaAs FET with an N-channel schottky gate, is
OUTLINE DRAWING
Unit:millimeters
designed for use in UHF band amplifiers.
17.5
1
FEATURES
• Class A operation
1.0
• High output power
P1dB=41dBm(TYP)
• High power gain
@2.3GHz
2-R1.25
2
2
GLP=11dB(TYP)
• High power added efficiency
hadd=40%(TYP)
@2.3GHz
3
@2.3GHz,P1dB
14.3
• Hermetically sealed metal-ceramic package with ceramic lid
9.4
APPLICATION
UHF band power amplifiers
QUALITY GRADE
• IG
10.0
RECOMMENDED BIAS CONDITIONS
• VDS=10V
1
2
3
GATE
• ID=2.6A
SOURCE(FLANGE)
DRAIN
• Rg=50W
GF-21
• Refer to Bias Procedure
ABSOLUTE MAXIMUM RATINGS (Ta=25˚C)
Symbol
Parameter
Gate to drain voltage
Gate to source voltage
Drain current
Ratings
Unit
V
V
VGDO
VGSO
ID
-15
-15
10
A
Reverse gate current
IGR
IGF
30
mA
mA
W
63
Forward gate current
Total power dissipation
Channel temperature
Storage temperature
PT
37.5
175
-65 to +175
*1
Tch
˚C
˚C
Tstg
*1:TC=25˚C
ELECTRICAL CHARACTERISTICS (Ta=25˚C)
Limits
Symbol
Parameter
Unit
Min
–
Typ
–
Max
10
–
IDSS
gm
Saturated drain current
Transconductance
A
S
V
VDS=3V,VGS=0V
VDS=3V,ID=2.6A
–
3.0
–
Gate to source cut-off voltage
VGS(off)
-2
-5
VDS=3V,ID=20mA Test conditions
VDS=10V,ID 2.6A,f=2.3GHz
DVf method
Output power at 1dB gain
compression
–
41
dBm
40
10
P1dB
11
40
–
Linear power gain
*2
–
–
dB
%
GLP
Power added efficiency at P1dB
Thermal resistance *1
hadd
–
–
4.0
Rth(ch-c)
˚C/W
*1:Channel to case *2:Pin=25dBm
Nov. ´97
MITSUBISHI SEMICONDUCTOR áGaAs FETñ
MGF0911A
L, S BAND POWER GaAs FET
TYPICAL CHARACTERISTICS
ID vs. VGS
ID vs. VDS
12
12
VDS=3V
Ta=25˚C
VGS=-0.5V/Step
Ta=25˚C
VGS=0V
8
8
4
0
4
0
-2
-1
0
1
2
3
4
5
6
-3
0
GATE TO SOURCE VOLTAGE VGS(V)
DRAIN TO SOURCE VOLTAGE VDS(V)
PO & hadd vs. Pin
GLP,P1dB, ID and hadd vs. VDS
(f=2.3GHz)
(f=2.3GHz)
45
40
Gp=11 10 9 dB
VDS=10V
ID=2.6A
ID=2.6A
GLP
13
12
11
10
41
PO
P1dB
35
30
39
37
50
40
30
20
10
0
hadd
hadd
40
20
25
0
20
25
30
35
6
8
10
INPUT POWER Pin(dBm)
VDS(V)
Nov. ´97
MITSUBISHI SEMICONDUCTOR áGaAs FETñ
MGF0911A
L, S BAND POWER GaAs FET
S11 ,S22 vs. f.
S21 ,S12 vs. f.
+90˚
+j50
+j25
+j100
3.0GHz
3.0GHz
+j10
0
+j250
3.0GHz
S12
S21
3.0GHz
0.5GHz
S22
5
4
3
2
1
25
50
100
250
0
±180˚
0˚
0.5GHz
S11
I S21 I
0.5GHz
0.5GHz
-j10
-j250
0.1
-j25
-j100
Ta=25˚C
VDS=10V
ID=2.6A
0.2
-90˚
-j50
S PARAMETERS (Ta=25˚C,VDS=10V,ID=2.6A)
S11
S21
S12
S22
Freq.
(GHz)
MSG/MAG
(dB)
K
Magn.
Angle(deg.)
Magn.
Angle(deg.)
Magn.
Angle(deg.)
Magn.
Angle(deg.)
0.50
0.60
0.70
0.80
0.90
1.00
1.10
1.20
1.30
1.40
1.50
1.60
1.70
1.80
1.90
2.00
2.10
2.20
2.30
2.40
2.50
2.60
2.70
2.80
2.90
3.00
0.986
0.985
0.984
0.983
0.982
0.981
0.980
0.979
0.978
0.976
0.975
0.974
0.973
0.972
0.971
0.970
0.969
0.968
0.967
0.966
0.965
0.965
0.964
0.963
0.962
0.961
-167.3
-171.3
-174.3
-175.5
-172.1
-173.9
-175.3
-176.3
-176.9
-177.9
-178.2
-179.3
-179.8
179.5
178.6
176.7
175.9
175.1
174.1
173.1
172.3
171.2
170.2
168.7
167.6
166.3
2.046
1.833
1.515
1.356
1.233
1.128
1.033
0.970
0.919
0.878
0.845
0.811
0.788
0.771
0.754
0.653
0.638
0.638
0.635
0.625
0.628
0.634
0.635
0.646
0.642
0.651
0.008
0.010
0.011
0.012
0.013
0.013
0.015
0.015
0.016
0.017
0.018
0.019
0.020
0.020
0.022
0.023
0.023
0.023
0.024
0.025
0.025
0.027
0.027
0.028
0.029
0.029
44.1
44.2
44.6
44.9
45.3
45.8
46.4
46.8
47.0
47.3
47.6
48.0
48.4
48.9
49.2
49.6
49.9
50.4
50.7
51.0
51.2
51.6
51.9
52.3
52.5
52.7
0.913
0.911
0.909
0.907
0.904
0.902
0.898
0.895
0.889
0.883
0.875
0.865
0.858
0.850
0.843
0.837
0.833
0.829
0.826
0.823
0.820
0.818
0.816
0.814
0.812
0.811
0.515
0.567
0.583
0.675
0.683
0.713
0.736
0.785
0.815
0.835
0.900
0.951
0.989
1.011
1.050
1.149
1.170
1.221
1.242
1.256
1.267
1.292
1.315
1.327
1.366
1.412
23.1
22.7
21.8
21.2
20.3
19.6
19.3
18.7
18.2
17.5
17.1
16.8
15.8
14.7
14.1
13.9
13.7
12.7
12.3
11.9
11.6
11.4
11.0
10.1
9.8
91.2
87.9
86.1
83.6
84.0
81.1
79.7
77.8
75.8
73.6
71.6
69.4
67.8
65.8
64.1
63.1
60.9
59.0
56.3
54.2
52.3
51.3
48.9
46.3
44.0
41.0
-178.6
-179.9
178.6
178.2
177.7
176.6
175.7
176.6
176.0
175.6
175.2
175.0
174.6
173.6
173.4
172.6
174.1
173.6
172.9
171.0
170.3
168.8
167.1
165.7
164.6
162.7
9.4
Nov. ´97
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