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MGF0911A_1 [MITSUBISHI]

L, S BAND POWER GaAs FET; L， S波段功率GaAs FET
MGF0911A_1
型号： MGF0911A_1
厂家： Mitsubishi Group    Mitsubishi Group
描述：

L, S BAND POWER GaAs FET
L， S波段功率GaAs FET
文件： 总4页 (文件大小：37K)
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MITSUBISHI SEMICONDUCTOR áGaAs FETñ  
MGF0911A  
L, S BAND POWER GaAs FET  
DESCRIPTION  
The MGF0911A, GaAs FET with an N-channel schottky gate, is  
OUTLINE DRAWING  
Unit:millimeters  
designed for use in UHF band amplifiers.  
17.5  
1
FEATURES  
• Class A operation  
1.0  
• High output power  
P1dB=41dBm(TYP)  
• High power gain  
@2.3GHz  
2-R1.25  
2
2
GLP=11dB(TYP)  
• High power added efficiency  
hadd=40%(TYP)  
@2.3GHz  
3
@2.3GHz,P1dB  
14.3  
• Hermetically sealed metal-ceramic package with ceramic lid  
9.4  
APPLICATION  
UHF band power amplifiers  
QUALITY GRADE  
• IG  
10.0  
RECOMMENDED BIAS CONDITIONS  
• VDS=10V  
1
2
3
GATE  
• ID=2.6A  
SOURCE(FLANGE)  
DRAIN  
• Rg=50W  
GF-21  
• Refer to Bias Procedure  
ABSOLUTE MAXIMUM RATINGS (Ta=25˚C)  
Symbol  
Parameter  
Gate to drain voltage  
Gate to source voltage  
Drain current  
Ratings  
Unit  
V
V
VGDO  
VGSO  
ID  
-15  
-15  
10  
A
Reverse gate current  
IGR  
IGF  
30  
mA  
mA  
W
63  
Forward gate current  
Total power dissipation  
Channel temperature  
Storage temperature  
PT  
37.5  
175  
-65 to +175  
*1  
Tch  
˚C  
˚C  
Tstg  
*1:TC=25˚C  
ELECTRICAL CHARACTERISTICS (Ta=25˚C)  
Limits  
Symbol  
Parameter  
Unit  
Min  
–
Typ  
–
Max  
10  
–
IDSS  
gm  
Saturated drain current  
Transconductance  
A
S
V
VDS=3V,VGS=0V  
VDS=3V,ID=2.6A  
–
3.0  
–
Gate to source cut-off voltage  
VGS(off)  
-2  
-5  
VDS=3V,ID=20mA Test conditions  
VDS=10V,ID 2.6A,f=2.3GHz  
DVf method  
Output power at 1dB gain  
compression  
–
41  
dBm  
40  
10  
P1dB  
11  
40  
–
Linear power gain  
*2  
–
–
dB  
%
GLP  
Power added efficiency at P1dB  
Thermal resistance *1  
hadd  
–
–
4.0  
Rth(ch-c)  
˚C/W  
*1:Channel to case *2:Pin=25dBm  
Mitsubishi Electric  
June/2004  
MITSUBISHI SEMICONDUCTOR áGaAs FETñ  
MGF0911A  
L, S BAND POWER GaAs FET  
TYPICAL CHARACTERISTICS  
ID vs. VGS  
ID vs. VDS  
12  
12  
VDS=3V  
Ta=25˚C  
VGS=-0.5V/Step  
Ta=25˚C  
VGS=0V  
8
8
4
0
4
0
-2  
-1  
0
1
2
3
4
5
6
-3  
0
GATE TO SOURCE VOLTAGE VGS(V)  
DRAIN TO SOURCE VOLTAGE VDS(V)  
PO & hadd vs. Pin  
GLP,P1dB, ID and hadd vs. VDS  
(f=2.3GHz)  
(f=2.3GHz)  
45  
40  
Gp=11 10 9 dB  
VDS=10V  
ID=2.6A  
ID=2.6A  
GLP  
13  
12  
11  
10  
41  
PO  
P1dB  
35  
30  
39  
37  
50  
40  
30  
20  
10  
0
hadd  
hadd  
40  
20  
25  
0
20  
25  
30  
35  
6
8
10  
INPUT POWER Pin(dBm)  
VDS(V)  
Mitsubishi Electric  
June/2004  
MITSUBISHI SEMICONDUCTOR áGaAs FETñ  
MGF0911A  
L, S BAND POWER GaAs FET  
S11 ,S22 vs. f.  
S21 ,S12 vs. f.  
+90˚  
+j50  
+j25  
+j100  
3.0GHz  
3.0GHz  
+j10  
0
+j250  
3.0GHz  
S12  
S21  
3.0GHz  
0.5GHz  
S22  
5
4
3
2
1
25  
50  
100  
250  
0
±180˚  
0˚  
0.5GHz  
S11  
I S21 I  
0.5GHz  
0.5GHz  
-j10  
-j250  
0.1  
-j25  
-j100  
Ta=25˚C  
VDS=10V  
ID=2.6A  
0.2  
-90˚  
-j50  
S PARAMETERS (Ta=25˚C,VDS=10V,ID=2.6A)  
S11  
S21  
S12  
S22  
Freq.  
(GHz)  
MSG/MAG  
(dB)  
K
Magn.  
Angle(deg.)  
Magn.  
Angle(deg.)  
Magn.  
Angle(deg.)  
Magn.  
Angle(deg.)  
0.50  
0.60  
0.70  
0.80  
0.90  
1.00  
1.10  
1.20  
1.30  
1.40  
1.50  
1.60  
1.70  
1.80  
1.90  
2.00  
2.10  
2.20  
2.30  
2.40  
2.50  
2.60  
2.70  
2.80  
2.90  
3.00  
0.986  
0.985  
0.984  
0.983  
0.982  
0.981  
0.980  
0.979  
0.978  
0.976  
0.975  
0.974  
0.973  
0.972  
0.971  
0.970  
0.969  
0.968  
0.967  
0.966  
0.965  
0.965  
0.964  
0.963  
0.962  
0.961  
-167.3  
-171.3  
-174.3  
-175.5  
-172.1  
-173.9  
-175.3  
-176.3  
-176.9  
-177.9  
-178.2  
-179.3  
-179.8  
179.5  
178.6  
176.7  
175.9  
175.1  
174.1  
173.1  
172.3  
171.2  
170.2  
168.7  
167.6  
166.3  
2.046  
1.833  
1.515  
1.356  
1.233  
1.128  
1.033  
0.970  
0.919  
0.878  
0.845  
0.811  
0.788  
0.771  
0.754  
0.653  
0.638  
0.638  
0.635  
0.625  
0.628  
0.634  
0.635  
0.646  
0.642  
0.651  
0.008  
0.010  
0.011  
0.012  
0.013  
0.013  
0.015  
0.015  
0.016  
0.017  
0.018  
0.019  
0.020  
0.020  
0.022  
0.023  
0.023  
0.023  
0.024  
0.025  
0.025  
0.027  
0.027  
0.028  
0.029  
0.029  
44.1  
44.2  
44.6  
44.9  
45.3  
45.8  
46.4  
46.8  
47.0  
47.3  
47.6  
48.0  
48.4  
48.9  
49.2  
49.6  
49.9  
50.4  
50.7  
51.0  
51.2  
51.6  
51.9  
52.3  
52.5  
52.7  
0.913  
0.911  
0.909  
0.907  
0.904  
0.902  
0.898  
0.895  
0.889  
0.883  
0.875  
0.865  
0.858  
0.850  
0.843  
0.837  
0.833  
0.829  
0.826  
0.823  
0.820  
0.818  
0.816  
0.814  
0.812  
0.811  
0.515  
0.567  
0.583  
0.675  
0.683  
0.713  
0.736  
0.785  
0.815  
0.835  
0.900  
0.951  
0.989  
1.011  
1.050  
1.149  
1.170  
1.221  
1.242  
1.256  
1.267  
1.292  
1.315  
1.327  
1.366  
1.412  
23.1  
22.7  
21.8  
21.2  
20.3  
19.6  
19.3  
18.7  
18.2  
17.5  
17.1  
16.8  
15.8  
14.7  
14.1  
13.9  
13.7  
12.7  
12.3  
11.9  
11.6  
11.4  
11.0  
10.1  
9.8  
91.2  
87.9  
86.1  
83.6  
84.0  
81.1  
79.7  
77.8  
75.8  
73.6  
71.6  
69.4  
67.8  
65.8  
64.1  
63.1  
60.9  
59.0  
56.3  
54.2  
52.3  
51.3  
48.9  
46.3  
44.0  
41.0  
-178.6  
-179.9  
178.6  
178.2  
177.7  
176.6  
175.7  
176.6  
176.0  
175.6  
175.2  
175.0  
174.6  
173.6  
173.4  
172.6  
174.1  
173.6  
172.9  
171.0  
170.3  
168.8  
167.1  
165.7  
164.6  
162.7  
9.4  
Mitsubishi Electric  
June/2004  
MITSUBISHI SEMICONDUCTOR <GaAs FET>  
MGF0911A  
L, S BAND POWER GaAs FET  
Requests Regarding Safety Designs  
Mitsubishi Electric constantly strives to raise the level of its quality and reliability. Despite these concerted efforts,  
however, there will be occasions when our semiconductor products suffer breakdowns, malfunctions or other  
problems. In view of this reality, it is requested that every feasible precaution be taken in the pursuit of redundancy  
design, malfunction prevention design and other safety-related designs, to prevent breakdowns or malfunctions in our  
products from resulting in accidents involving people, fires, social losses or other problems, thereby upholding the  
highest levels of safety in the products when in use by customers.  
Matters of Importance when Using these Materials  
1. These materials are designed as reference materials to ensure that all customers purchase Mitsubishi Electric  
semiconductors best suited to their specific use applications. Please be aware, however, that the technical  
information contained in these materials does not comprise consent for the execution or use of intellectual property  
rights or other rights owned by Mitsubishi Electric Corporation.  
2. Mitsubishi Electric does not assume responsibility for damages resulting from the use of product data, graphs,  
charts, programs, algorithms or other applied circuit examples described in these materials, or for the infringement  
of the rights of third-party owners resulting from such use.  
3. The data, graphs, charts, programs, algorithms and all other information described in these materials were current  
at the issue of these materials, with Mitsubishi Electric reserving the right to make any necessary updates or  
changes in the products or specifications in these materials without prior notice. Before purchasing Mitsubishi  
Electric semiconductor products, therefore, please obtain the latest available information from Mitsubishi Electric  
directly or an authorized dealer.  
4. Every possible effort has been made to ensure that the information described in these materials is fully accurate.  
However, Mitsubishi Electric assumes no responsibility for damages resulting from inaccuracies occurring within  
these materials.  
5. When using the product data, technical contents indicated on the graphs, charts, programs or algorithms described  
in these materials, assessments should not be limited to only the technical contents, programs and algorithm units.  
Rather, it is requested that ample evaluations be made of each individual system as a whole, with the customer  
assuming full responsibility for decisions on the propriety of application. Mitsubishi Electric does not accept  
responsibility for the propriety of application.  
6. The products described in these materials, with the exception of special mention concerning use and reliability, have  
been designed and manufactured with the purpose of use in general electronic machinery. Accordingly these  
products have not been designed and manufactured with the purpose of application in machinery or systems that will  
be used under conditions that can affect human life, or in machinery or systems used in social infrastructure that  
demand a particularly high degree of reliability. When considering the use of the products described in these  
materials in transportation machinery (automobiles, trains, vessels), for objectives related to medical treatment,  
aerospace, nuclear power control, submarine repeaters or systems or other specialized applications, please consult  
with Mitsubishi Electric directly or an authorized dealer.  
7. When considering use of products for purposes other than the specific applications described in these materials,  
please inquire at Mitsubishi Electric or an authorized dealer.  
8. The prior consent of Mitsubishi Electric in writing is required for any reprinting or reproduction of these materials.  
9. Please direct any inquiries regarding further details of these materials, or any other comments or matters of attention,  
to Mitsubishi Electric or an authorized dealer.  
Mitsubishi Electric  
June/2004  

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