MGF0909A_1 [MITSUBISHI]
L,S BAND POWER GaAs FET; L， S波段功率GaAs FET
| 型号： | MGF0909A_1 |
| 厂家： | 
Mitsubishi Group |
| 描述： | L,S BAND POWER GaAs FET |
| 文件： | 总3页 (文件大小：38K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MITSUBISHI SEMICONDUCTOR<GaAs FET>
MGF0909A
L & S BAND GaAs FET [ non – matched ]
DESCRIPTION
The MGF0909A GaAs FET with an N-channel schottky
OUTLINE DRAWING
Unit : millimeters
Gate, is designed for use L/S band amplifiers.
FEATURES
①
· High output power
P1dB=38.0dBm(TYP.) @f=2.3GHz
· High power gain
GLp=11.0dB(TYP.) @f=2.3GHz
· High power added efficiency
hadd=45%(TYP.)
@f=2.3GHz,P1dB
②
②
φ2.2
0.6±0.2
· Hermetic Package
③
APPLICATION
· For L/S Band power amplifiers
QUALITY
· GG
5.0
RECOMMENDED BIAS CONDITIONS
· Vds=10V · Ids=1.3A · Rg=100W
9.0±0.2
14.0
1.9±0.4
Absolute maximum ratings (Ta=25°C)
Symbol
Parameter
Ratings
-15
Unit
V
Gate to source
breakdown voltage
VGSO
(1) GATE
(2) SOURCE (FLANGE)
(3) DRAIN
GF-7
VGDO Gate to drain breakdown voltage
-15
V
ID
Drain current
5
A
IGR
IGF
PT
Reverse gate current
Forward gate current
Total power dissipation
Cannel temperature
Storage temperature
-15
mA
mA
W
31.5
27.3
Tch
Tstg
175
°C
°C
-65 to +175
Electrical characteristics
(Ta=25°C)
Symbol
Parameter
Test conditions
Limits
Unit
Min.
Typ.
Max.
5.0
Saturated drain current
VDS=3V,VGS=0V
-
-2.0
-
--
-
A
V
IDSS
Gate to source cut-off voltage
Transconductance
VDS=3V,ID=10mA
VDS=3V,ID=1.3A
-5.0
VGS(off)
gm
1.5
38.0
45
11.0
-
-
-
S
P1dB
hadd
Output power 1dB Compression P VDS=10V,ID=1.3A,f=2.3GHz
37.0
-
dBm
%
Power added Efficiency
Linear Power Gain
*1 *1:Po=P1dB
*2 *2:Pi=22dBm
DVf Method
-
GLP
10.0
-
-
dB
°C/W
Rth(ch-c)
Thermal Resistance *1
9
*1:Channel to case / Above parameters, ratings, limits are subject to change.
Mitsubishi Electric
June/2004
MGF0909A TYPICAL CHARACTERISTICS Tc=0/25/50/75deg.C
TC=0deg
TC=25deg
TC=75deg
TC=50deg
45
40
35
30
25
20
15
10
5
90
80
70
60
50
40
30
20
10
0
Po
PAE
GP
0
0
10
20
Pin (dBm)
30
40
Mitsubishi Electric
June/2004
MITSUBISHI SEMICONDUCTOR<GaAs FET>
MGF0909A
L & S BAND GaAs FET [ non – matched ]
Requests Regarding Safety Designs
Mitsubishi Electric constantly strives to raise the level of its quality and reliability. Despite these concerted efforts,
however, there will be occasions when our semiconductor products suffer breakdowns, malfunctions or other problems.
In view of this reality, it is requested that every feasible precaution be taken in the pursuit of redundancy design,
malfunction prevention design and other safety-related designs, to prevent breakdowns or malfunctions in our products
from resulting in accidents involving people, fires, social losses or other problems, thereby upholding the highest levels
of safety in the products when in use by customers.
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1. These materials are designed as reference materials to ensure that all customers purchase Mitsubishi Electric
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6. The products described in these materials, with the exception of special mention concerning use and reliability, have
been designed and manufactured with the purpose of use in general electronic machinery. Accordingly these
products have not been designed and manufactured with the purpose of application in machinery or systems that will
be used under conditions that can affect human life, or in machinery or systems used in social infrastructure that
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to Mitsubishi Electric or an authorized dealer.
Mitsubishi Electric
June/2004
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