MGF0910A [MITSUBISHI]
L, S BAND POWER GaAs FET; L， S波段功率GaAs FET
| 型号： | MGF0910A |
| 厂家： | 
Mitsubishi Group |
| 描述： | L, S BAND POWER GaAs FET |
| 文件： | 总3页 (文件大小：29K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MITSUBISHI SEMICONDUCTOR GaAs FET
MGF0910A
L, S BAND POWER GaAs FET
DESCRIPTION
The MGF0910A, GaAs FET with an N-channel schottky gate, is
Unit:millimeters
OUTLINE DRAWING
designed for use in UHF band amplifiers.
17.5
1
FEATURES
• Class A operation
1.0
• High output power
P1dB=38dBm(TYP)
• High power gain
@2.3GHz
2-R1.25
2
2
GLP=11dB(TYP)
• High power added efficiency
hadd=45%(TYP)
@2.3GHz
3
@2.3GHz,P1dB
14.3
• Hermetically sealed metal-ceramic package with ceramic lid
9.4
APPLICATION
UHF band power amplifiers
QUALITY GRADE
• IG
10.0
RECOMMENDED BIAS CONDITIONS
• VDS=10V
1
2
3
GATE
• ID=1.3A
SOURCE(FLANGE)
DRAIN
• Rg=100W
GF-21
• Refer to Bias Procedure
ABSOLUTE MAXIMUM RATINGS (Ta=25˚C)
Symbol
Parameter
Gate to drain voltage
Gate to source voltage
Drain current
Ratings
Unit
V
V
VGDO
VGSO
ID
-15
-15
5
A
Reverse gate current
IGR
IGF
15
mA
mA
W
31.5
27.3
175
Forward gate current
Total power dissipation
Channel temperature
Storage temperature
PT
*1
Tch
˚C
˚C
-65 to +175
Tstg
*1:TC=25˚C
ELECTRICAL CHARACTERISTICS (Ta=25˚C)
Limits
Symbol
Test conditions
Unit
Parameter
Min
–
Typ
–
Max
5.0
–
A
S
V
IDSS
gm
Saturated drain current
Transconductance
VDS=3V,VGS=0V
VDS=3V,ID=1.3A
VDS=3V,ID=10mA
–
1.5
–
-2
-5
VGS(off)
Gate to source cut-off voltage
Output power at 1dB gain
compression
38
–
dBm
37
P1dB
VDS=10V,ID 1.3A,f=2.3GHz
11
45
–
Linear power gain
*2
10
dB
%
–
–
GLP
Power added efficiency at P1dB
Thermal resistance *1
hadd
–
–
DVf method
5.5
Rth(ch-c)
˚C/W
*1:Channel to case *2:Pin=22dBm
Nov. ´97
MITSUBISHI SEMICONDUCTOR GaAs FET
MGF0910A
L, S BAND POWER GaAs FET
TYPICAL CHARACTERISTICS
ID vs. VGS
ID vs. VDS
6
6
VDS=3V
Ta=25˚C
VGS=-0.5V/Step
Ta=25˚C
VGS=0V
4
2
0
4
2
0
-2
-1
0
1
2
3
4
5
6
-3
0
GATE TO SOURCE VOLTAGE VGS(V)
DRAIN TO SOURCE VOLTAGE VDS(V)
PO & add vs. Pin
GLP,P1dB, ID and add vs. VDS
(f=2.3GHz)
(f=2.3GHz)
40
Gp=11 10 9 dB
VDS=10V
ID=1.3A
13
12
11
10
ID=1.3A
GLP
PO
39
37
35
P1dB
30
20
50
40
30
20
10
0
hadd
hadd
40
20
0
20
30
6
8
10
INPUT POWER Pin(dBm)
VDS(V)
Nov. ´97
MITSUBISHI SEMICONDUCTOR GaAs FET
MGF0910A
L, S BAND POWER GaAs FET
S11 ,S22 vs. f.
S21 ,S12 vs. f.
+90˚
+j50
+j25
+j100
3.0GHz
3.0GHz
+j10
0
+j250
S21
3.0GHz
S11
0.5GHz
1
S12
0.5GHz
S22
5
4
3
2
25
50
100
250
0
0˚
±180˚
I S21 I
-j10
-j250
0.5GHz
-j25
0.1
-j100
Ta=25˚C
VDS=10V
ID=1.3A
0.2
-90˚
-j50
S PARAMETERS (Ta=25˚C,VDS=10V,ID=1.3A)
S11
S21
S12
S22
Freq.
(GHz)
MSG/MAG
(dB)
K
Magn.
Angle(deg.)
Magn.
Angle(deg.)
Magn.
Angle(deg.)
Magn.
Angle(deg.)
0.50
0.60
0.70
0.80
0.90
1.00
1.10
1.20
1.30
1.40
1.50
1.60
1.70
1.80
1.90
2.00
2.10
2.20
2.30
2.40
2.50
2.60
2.70
2.80
2.90
3.00
0.962
0.961
0.960
0.959
0.958
0.957
0.956
0.955
0.954
0.952
0.950
0.948
0.946
0.944
0.941
0.938
0.934
0.930
0.926
0.922
0.918
0.913
0.907
0.902
0.895
0.885
-155.5
-159.7
-163.4
-166.8
-168.4
-171.3
-173.8
-175.4
-176.8
-178.7
-179.7
178.4
177.2
176.0
174.7
174.3
173.3
172.3
171.2
169.9
169.0
167.6
166.1
164.6
163.3
162.0
3.762
3.339
2.768
2.460
2.219
2.021
1.830
1.691
1.590
1.500
1.425
1.352
1.330
1.255
1.201
1.040
0.993
0.977
0.949
0.921
0.909
0.900
0.876
0.873
0.843
0.832
0.0080
0.0090
0.0110
0.0130
0.0140
0.0149
0.0156
0.0172
0.0182
0.0189
0.0192
0.0195
0.0219
0.0224
0.0225
0.0235
0.0239
0.0249
0.0258
0.0265
0.0275
0.0280
0.0286
0.0296
0.0310
0.0320
50.0
49.9
48.5
47.5
46.5
46.0
45.6
44.6
44.0
43.5
42.3
40.9
40.3
39.0
38.5
38.0
37.2
36.5
35.8
35.3
34.6
33.6
32.5
31.2
30.2
29.1
0.869
0.869
0.867
0.865
0.860
0.854
0.845
0.840
0.832
0.825
0.818
0.805
0.795
0.782
0.773
0.757
0.750
0.740
0.725
0.708
0.687
0.672
0.662
0.642
0.629
0.610
0.752
0.795
0.835
0.842
0.883
0.902
0.943
1.025
1.055
1.085
1.125
1.175
1.195
1.212
1.256
1.285
1.295
1.305
1.355
1.395
1.415
1.435
1.454
1.475
1.495
1.525
25.0
24.8
24.7
23.5
23.0
23.1
22.4
21.5
20.0
19.0
18.5
17.8
17.0
16.9
16.0
15.4
14.8
14.5
14.2
13.8
13.5
12.8
12.3
11.9
10.8
10.5
97.8
93.6
90.8
87.5
87.1
84.1
82.2
80.2
78.0
75.7
73.7
71.6
69.9
67.7
66.2
65.3
63.3
61.7
59.1
57.0
55.4
54.3
52.2
49.9
48.4
45.5
-177.6
-179.6
178.5
178.2
177.6
176.8
175.6
176.6
176.1
175.7
175.3
175.1
174.7
174.0
173.4
174.4
174.2
173.4
172.7
172.2
171.6
170.3
168.9
167.7
166.9
159.4
Nov. ´97
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