MGF0909A [MITSUBISHI]
L,S BAND POWER GaAs FET; L， S波段功率GaAs FET
| 型号： | MGF0909A |
| 厂家： | 
Mitsubishi Group |
| 描述： | L,S BAND POWER GaAs FET |
| 文件： | 总3页 (文件大小：26K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MITSUBISHI SEMICONDUCTOR GaAs FET
MGF0909A
L, S BAND POWER GaAs FET
DESCRIPTION
The MGF0909A, GaAs FET with an N-channel schottky gate, is
Unit:millimeters
OUTLINE DRAWING
designed for use in UHF band amplifiers.
FEATURES
• High output power
1
P1dB=38dBm(TYP.)
• High power gain
@f=2.3GHz
GLP=11dB(TYP.)
• High power added efficiency
hadd=45%(TYP.)
@f=2.3GHz,Pin=20dBm
@f=2.3GHz,P1dB=20dBm
2
2
0.6±0.2
ø2.2
3
APPLICATION
For UHF Band power amplifiers
5.0
QUALITY GRADE
• GG
RECOMMENDED BIAS CONDITIONS
• VDS=10V
9.0±0.2
14.0
• ID=1.3A
• Rg=100W
1
GATE
2
3
• Refer to Bias Procedure
SOURCE
DRAIN
GF-7
ABSOLUTE MAXIMUM RATINGS (Ta=25˚C)
Symbol
Parameter
Ratings
Unit
V
V
VGSO
VGDO
ID
Gate to source voltage
Gate to drain voltage
Drain current
-15
-15
5.0
A
Reverse gate current
IGR
15
mA
mA
W
IGF
31.5
Forward gate current
Total power dissipation
Channel temperature
Storage temperature
PT
27.3
*1
Tch
175
-65 to +175
˚C
˚C
Tstg
*1:TC=25˚C
ELECTRICAL CHARACTERISTICS (Ta=25˚C)
Limits
Symbol
Parameter
Test conditions
Unit
Min
Typ
–
Max
5
–
-2
–
A
V
IDSS
Saturated drain current
Gate to source cut-off voltage
Transconductance
VDS=3V,VGS=0V
VDS=3V,ID=10mA
VDS=3V,ID=1.3A
-5
VGs(off)
gm
–
–
–
1.5
38
11
45
–
S
dBm
dB
%
37
10
Output power
P1dB
VDS=10V,ID=1.3A,f=2.3GHz
Linear power gain
*2
–
GLP
Power added efficiency at P1dB
–
hadd
–
–
Thermal resistance *1
DVf method
5.5
Rth(ch-c)
˚C/W
*1:Channel to case *2:Pin=22dBm
Nov. ´97
MITSUBISHI SEMICONDUCTOR GaAs FET
MGF0909A
L, S BAND POWER GaAs FET
TYPICAL CHARACTERISTICS
ID vs. VGS
ID vs. VDS
6
6
VDS=3V
Ta=25˚C
VGS=-0.5V/Step
Ta=25˚C
VGS=0V
4
2
4
2
0
0
-2
-1
0
1
2
3
4
5
6
-3
0
GATE TO SOURCE VOLTAGE VGS(V)
DRAIN TO SOURCE VOLTAGE VDS(V)
PO & add vs. Pin
GLP,P1dB, ID and add vs. VDS
(f=2.3GHz)
(f=2.3GHz)
40
GP=11 10 9 dB
VDS=10V
ID=1.3A
13
12
11
10
ID=1.3A
GLP
PO
39
37
35
P1dB
30
20
50
40
30
20
10
0
hadd
hadd
40
20
0
20
30
6
8
10
INPUT POWER Pin(dBm)
VDS(V)
Nov. ´97
MITSUBISHI SEMICONDUCTOR GaAs FET
MGF0909A
L, S BAND POWER GaAs FET
S11 ,S22 vs. f.
S21 ,S12 vs. f.
+90˚
+j50
+j25
+j100
3.0GHz
3.0GHz
S21
+j10
0
+j250
3.0GHz
3.0GHz
S12
0.5GHz
S22
5
4
3
2
1
25
50
100
250
0
0˚
±180˚
I S21 I
0.5GHz
S11
-j10
-j250
0.1
-j25
-j100
Ta=25˚C
VDS=10V
ID=1.3A
0.2
-90˚
-j50
S PARAMETERS (Ta=25˚C,VDS=10V,ID=1.3A)
S11
S21
S12
S22
Freq.
(GHz)
MSG/MAG
(dB)
K
Magn.
Angle(deg.)
Magn.
Angle(deg.)
Magn.
Angle(deg.)
Magn.
Angle(deg.)
0.50
0.60
0.70
0.80
0.90
1.00
1.10
1.20
1.30
1.40
1.50
1.60
1.70
1.80
1.90
2.00
2.10
2.20
2.30
2.40
2.50
2.60
2.70
2.80
2.90
3.00
0.968
0.966
0.966
0.965
0.964
0.963
0.961
0.960
0.959
0.959
0.959
0.958
0.958
0.957
0.958
0.958
0.957
0.956
0.954
0.954
0.953
0.953
0.953
0.948
0.956
0.944
-155.5
-159.7
-163.4
-166.8
-168.4
-171.3
-173.8
-175.4
-176.8
-178.7
-179.7
178.4
177.2
176.0
174.7
174.3
173.3
172.3
171.2
169.9
169.0
167.6
166.1
164.6
163.3
162.0
3.763
3.340
2.768
2.460
2.219
2.021
1.831
1.613
1.591
1.500
1.425
1.359
1.301
1.255
1.201
1.040
0.993
0.977
0.949
0.921
0.909
0.901
0.876
0.873
0.843
0.832
0.013
0.013
0.014
0.014
0.015
0.015
0.016
0.016
0.017
0.017
0.018
0.018
0.019
0.019
0.020
0.021
0.021
0.022
0.022
0.023
0.023
0.024
0.024
0.025
0.025
0.025
13.2
14.6
16.5
18.2
20.6
22.5
24.1
25.8
27.8
29.5
31.2
33.8
35.4
37.6
39.5
41.5
43.1
44.8
46.5
48.7
50.8
52.6
54.3
55.2
57.3
58.0
0.823
0.823
0.822
0.822
0.820
0.819
0.818
0.814
0.804
0.807
0.805
0.801
0.795
0.789
0.785
0.784
0.783
0.783
0.782
0.780
0.779
0.778
0.778
0.776
0.775
0.773
0.652
0.713
0.755
0.782
0.825
0.855
0.875
0.955
0.985
0.996
1.105
1.135
1.145
1.185
1.205
1.194
1.203
1.235
1.295
1.325
1.345
1.362
1.403
1.452
1.523
1.554
25.4
25.2
24.7
23.4
23.1
23.0
22.4
19.0
19.2
19.0
18.9
18.5
18.0
16.9
16.5
16.2
15.5
14.9
14.7
14.5
13.8
12.8
12.3
11.9
10.8
10.5
97.8
93.6
90.8
87.5
87.1
84.1
82.2
80.2
78.0
75.7
73.7
71.6
69.9
67.7
66.2
65.3
63.3
61.7
59.1
57.0
55.4
54.3
52.2
49.9
48.4
45.5
-177.6
-179.6
178.5
178.2
177.6
176.8
175.6
176.6
176.1
175.7
175.3
175.1
174.7
174.0
173.4
174.4
174.2
173.4
172.7
172.2
171.6
170.3
168.9
167.7
166.9
165.1
Nov. ´97
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