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APTGT30A170T1G [MICROSEMI]

Phase leg Trench + Field Stop IGBT® Power Module; 相脚沟道+场站IGBT ？电源模块
APTGT30A170T1G
型号： APTGT30A170T1G
厂家： Microsemi    Microsemi
描述：

Phase leg Trench + Field Stop IGBT® Power Module
相脚沟道+场站IGBT ？电源模块

晶体 电源电路 晶体管 电动机控制 双极性晶体管 栅 局域网
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APTGT30A170T1G  
Phase leg  
Trench + Field Stop IGBT®  
Power Module  
VCES = 1700V  
IC = 30A @ Tc = 80°C  
Application  
5
6
11  
•
•
•
•
Welding converters  
Switched Mode Power Supplies  
Uninterruptible Power Supplies  
Motor control  
Q1  
CR1  
CR2  
7
8
Features  
Trench + Field Stop IGBT® Technology  
3
4
•
NTC  
-
-
-
-
-
-
-
Low voltage drop  
Q2  
Low tail current  
Switching frequency up to 20 kHz  
Soft recovery parallel diodes  
Low diode VF  
9
10  
Low leakage current  
RBSOA and SCSOA rated  
12  
1
2
•
Very low stray inductance  
-
Symmetrical design  
•
•
Internal thermistor for temperature monitoring  
High level of integration  
Benefits  
•
•
•
•
Outstanding performance at high frequency operation  
Direct mounting to heatsink (isolated package)  
Low junction to case thermal resistance  
Solderable terminals both for power and signal for  
easy PCB mounting  
•
•
Low profile  
RoHS Compliant  
Pins 1/2 ; 3/4 ; 5/6 must be shorted together  
Absolute maximum ratings  
Symbol  
Parameter  
Max ratings  
Unit  
VCES  
Collector - Emitter Breakdown Voltage  
1700  
45  
V
TC = 25°C  
TC = 80°C  
TC = 25°C  
IC  
Continuous Collector Current  
A
30  
ICM  
VGE  
PD  
Pulsed Collector Current  
Gate – Emitter Voltage  
Maximum Power Dissipation  
70  
±20  
210  
V
W
TC = 25°C  
Tj = 125°C  
RBSOA Reverse Bias Safe Operating Area  
60A@1600V  
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note  
APT0502 on www.microsemi.com  
1 – 5  
www.microsemi.com  
APTGT30A170T1G  
All ratings @ Tj = 25°C unless otherwise specified  
Electrical Characteristics  
Symbol Characteristic  
Test Conditions  
Min Typ Max Unit  
ICES  
Zero Gate Voltage Collector Current  
VGE = 0V, VCE = 1700V  
250  
2.4  
µA  
Tj = 25°C  
Tj = 125°C  
2.0  
2.4  
5.8  
VGE = 15V  
VCE(sat) Collector Emitter saturation Voltage  
VGE(th) Gate Threshold Voltage  
IGES  
V
IC = 30A  
VGE = VCE , IC = 1.5mA  
VGE = 20V, VCE = 0V  
5.2  
6.4  
600  
V
nA  
Gate – Emitter Leakage Current  
Dynamic Characteristics  
Symbol Characteristic  
Test Conditions  
VGE = 0V, VCE = 25V  
f = 1MHz  
Min Typ Max Unit  
Cies  
Cres  
Td(on)  
Tr  
Input Capacitance  
Reverse Transfer Capacitance  
Turn-on Delay Time  
Rise Time  
2500  
pF  
90  
100  
70  
Inductive Switching (25°C)  
V
GE = ±15V  
Bus = 900V  
ns  
V
Td(off) Turn-off Delay Time  
650  
IC = 30A  
RG = 18Ω  
Tf  
Td(on)  
Tr  
Fall Time  
Turn-on Delay Time  
Rise Time  
80  
100  
Inductive Switching (125°C)  
V
GE = ±15V  
Bus = 900V  
70  
750  
ns  
V
Td(off) Turn-off Delay Time  
IC = 30A  
RG = 18Ω  
Tf  
Fall Time  
100  
V
GE = ±15V  
Bus = 900V  
Eon  
Turn-on Switching Energy  
Tj = 125°C  
Tj = 125°C  
17  
mJ  
15  
V
IC = 30A  
RG = 18Ω  
Eoff  
Turn-off Switching Energy  
Reverse diode ratings and characteristics  
Symbol Characteristic  
Test Conditions  
VR=1700V  
IF = 50A  
Min Typ Max Unit  
Maximum Peak Repetitive Reverse Voltage  
Maximum Reverse Leakage Current  
DC Forward Current  
VRRM  
IRM  
IF  
1700  
V
µA  
A
Tj = 25°C  
Tj = 125°C  
TC=80°C  
Tj = 25°C  
Tj = 125°C  
Tj = 25°C  
Tj = 125°C  
Tj = 25°C  
Tj = 125°C  
Tj = 25°C  
Tj = 125°C  
250  
500  
50  
1.8  
1.9  
385  
490  
14  
2.2  
VF  
Diode Forward Voltage  
V
V
GE = 0V  
trr  
Qrr  
Er  
Reverse Recovery Time  
Reverse Recovery Charge  
Reverse Recovery Energy  
ns  
µC  
mJ  
IF = 50A  
VR = 900V  
di/dt =800A/µs  
23  
6
12  
2 – 5  
www.microsemi.com  
APTGT30A170T1G  
Thermal and package characteristics  
Symbol Characteristic  
Min Typ Max Unit  
IGBT  
Diode  
0.60  
0.70  
°C/W  
V
RthJC  
Junction to Case Thermal Resistance  
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz  
Operating junction temperature range  
Storage Temperature Range  
VISOL  
TJ  
3500  
-40  
-40  
-40  
2.5  
150  
125  
100  
4.7  
80  
°C  
TSTG  
TC  
Operating Case Temperature  
Torque Mounting torque  
To heatsink  
M4  
N.m  
g
Wt  
Package Weight  
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).  
Symbol Characteristic  
Min Typ Max Unit  
R25  
Resistance @ 25°C  
50  
kΩ  
K
B 25/85 T25 = 298.15 K  
3952  
R25  
T: Thermistor temperature  
RT: Thermistor value at T  
RT  
=
1
1
T
25/ 85   
exp B  
−
T25  
SP1 Package outline (dimensions in mm)  
See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com  
3 – 5  
www.microsemi.com  
APTGT30A170T1G  
Typical Performance Curve  
Output Characteristics (VGE=15V)  
Output Characteristics  
60  
60  
50  
40  
30  
20  
10  
0
TJ = 125°C  
50  
TJ=25°C  
VGE=19V  
40  
VGE=15V  
TJ=125°C  
30  
VGE=13V  
20  
VGE=9V  
10  
0
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4
0
1
2
3
4
5
VCE (V)  
V
CE (V)  
Energy losses vs Collector Current  
Transfert Characteristics  
60  
50  
40  
30  
20  
10  
0
40  
35  
30  
25  
20  
15  
10  
5
VCE = 900V  
Eon  
TJ=25°C  
VGE = 15V  
RG = 18 Ω  
TJ = 125°C  
Eoff  
TJ=125°C  
Er  
TJ=125°C  
0
0
20  
40  
60  
80  
100  
5
6
7
8
9
10  
11  
I
C (A)  
V
GE (V)  
Switching Energy Losses vs Gate Resistance  
80  
Reverse Bias Safe Operating Area  
70  
VCE = 900V  
60  
50  
40  
30  
20  
10  
0
VGE =15V  
IC = 30A  
TJ = 125°C  
Eon  
60  
40  
20  
0
Eoff  
Er  
VGE=15V  
TJ=125°C  
RG=18 Ω  
0
400  
800  
1200  
1600  
0
20  
40  
60  
80  
100  
120  
VCE (V)  
Gate Resistance (ohms)  
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0
IGBT  
0.9  
0.7  
0.5  
0.3  
0.1  
0.05  
Single Pulse  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
rectangular Pulse Duration (Seconds)  
4 – 5  
www.microsemi.com  
APTGT30A170T1G  
Operating Frequency vs Collector Current  
Forward Characteristic of diode  
45  
40  
35  
30  
25  
20  
15  
10  
5
100  
VCE=900V  
D=50%  
ZVS  
TJ=25°C  
80  
RG=18 Ω  
TJ=125°C  
TC=75°C  
60  
TJ=125°C  
40  
ZCS  
hard  
switching  
20  
TJ=125°C  
0
0
0
0.5  
1
1.5  
VF (V)  
2
2.5  
3
0
10  
20  
30  
IC (A)  
40  
50  
60  
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0
Diode  
0.9  
0.7  
0.5  
0.3  
0.1  
Single Pulse  
0.05  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
rectangular Pulse Duration (Seconds)  
Microsemi reserves the right to change, without notice, the specifications and information contained herein  
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522  
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.  
5 – 5  
www.microsemi.com  

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