APTGT30H60T3G [MICROSEMI]
Full - Bridge Trench + Field Stop IGBT Power Module; 全 - 桥沟道+场站IGBT功率模块
| 型号： | APTGT30H60T3G |
| 厂家： | 
Microsemi |
| 描述： | Full - Bridge Trench + Field Stop IGBT Power Module |
| 文件： | 总5页 (文件大小：264K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APTGT30H60T3G
Full - Bridge
Trench + Field Stop IGBT®
VCES = 600V
IC = 30A @ Tc = 80°C
Application
13 14
•
•
•
•
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Q1
Q3
CR1
22
CR3
11
10
18
19
Features
Trench + Field Stop IGBT® Technology
7
8
•
-
-
-
-
-
-
-
-
Low voltage drop
23
Low tail current
Q2
29
Q4
Switching frequency up to 20 kHz
Soft recovery parallel diodes
Low diode VF
CR2
CR4
26
27
4
3
Low leakage current
Avalanche energy rated
RBSOA and SCSOA rated
30
31
32
•
•
Kelvin emitter for easy drive
Very low stray inductance
15
16
R1
-
Symmetrical design
•
•
High level of integration
Internal thermistor for temperature monitoring
28 27 26 25
23 22
20 19 18
29
16
Benefits
30
15
•
•
•
•
•
•
•
•
Stable temperature behavior
Very rugged
Solderable terminals for easy PCB mounting
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
Each leg can be easily paralleled to achieve a phase
leg of twice the current capability
RoHS Compliant
31
32
14
13
2
3
4
7
8
10 11
12
All multiple inputs and outputs must be shorted together
Example: 13/14 ; 29/30 ; 22/23 …
•
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
V
VCES
Collector - Emitter Breakdown Voltage
600
TC = 25°C
50
IC
Continuous Collector Current
A
TC = 80°C
TC = 25°C
30
ICM
VGE
PD
Pulsed Collector Current
Gate – Emitter Voltage
60
±20
V
W
TC = 25°C
TJ = 150°C
Maximum Power Dissipation
90
RBSOA Reverse Bias Safe Operating Area
60A @ 550V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
1 - 5
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APTGT30H60T3G
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
ICES
Zero Gate Voltage Collector Current
VGE = 0V, VCE = 600V
250
1.9
µA
Tj = 25°C
Tj = 150°C
1.5
1.7
5.8
VGE =15V
VCE(sat) Collector Emitter Saturation Voltage
VGE(th) Gate Threshold Voltage
IGES
V
IC = 30A
VGE = VCE , IC = 400µA
VGE = 20V, VCE = 0V
5.0
6.5
300
V
nA
Gate – Emitter Leakage Current
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
1600
110
50
110
45
200
40
VGE = 0V
VCE = 25V
f = 1MHz
pF
Inductive Switching (25°C)
VGE = ±15V
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
Tf Fall Time
Td(on) Turn-on Delay Time
Tr Rise Time
ns
VBus = 300V
IC = 30A
RG = 10Ω
Inductive Switching (150°C)
120
50
VGE = ±15V
ns
VBus = 300V
Td(off) Turn-off Delay Time
Tf
250
60
IC = 30A
Fall Time
RG = 10Ω
Tj = 25°C
Tj = 150°C
Tj = 25°C
Tj = 150°C
0.16
0.3
VGE = ±15V
VBus = 300V
IC = 30A
Eon
Turn-on Switching Energy
mJ
mJ
0.7
Eoff
Turn-off Switching Energy
RG = 10Ω
1.05
Reverse diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
VRRM
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
600
V
Tj = 25°C
Tj = 150°C
Tc = 80°C
Tj = 25°C
Tj = 150°C
250
500
IRM
VR=600V
µA
IF
DC Forward Current
30
1.6
1.5
A
V
IF = 30A
2
VF
Diode Forward Voltage
VGE = 0V
Tj = 25°C
Tj = 150°C
Tj = 25°C
Tj = 150°C
Tj = 25°C
Tj = 150°C
100
150
1.5
3.1
0.34
0.75
trr
Qrr
Er
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Energy
ns
µC
mJ
IF = 30A
VR = 300V
di/dt =1800A/µs
2 - 5
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APTGT30H60T3G
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic
R25 Resistance @ 25°C
B25/85 T25 = 298.15 K
Min Typ Max Unit
50
kΩ
K
3952
R25
T: Thermistor temperature
RT: Thermistor value at T
RT
=
1
1
T
25/85
exp B
−
T25
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
IGBT
Diode
1.6
RthJC
Junction to Case Thermal Resistance
°C/W
2.45
VISOL
TJ
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
2500
-40
-40
-40
2.5
V
175
125
100
4.7
°C
TSTG
TC
Operating Case Temperature
Torque Mounting torque
Wt
To heatsink
M4
N.m
g
Package Weight
110
SP3 Package outline (dimensions in mm)
2 8
1 7
1
12
See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com
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APTGT30H60T3G
Typical Performance Curve
Output Characteristics (VGE=15V)
Output Characteristics
60
50
40
30
20
10
0
60
50
40
30
20
10
0
VGE=19V
TJ=25°C
TJ = 150°C
TJ=125°C
VGE=13V
VGE=15V
TJ=150°C
VGE=9V
TJ=25°C
0
0.5
1
1.5
VCE (V)
2
2.5
3
0
0.5
1
1.5
V
2
2.5
3
3.5
CE (V)
Energy losses vs Collector Current
Transfert Characteristics
60
50
40
30
20
10
0
2
VCE = 300V
TJ=25°C
VGE = 15V
RG = 10Ω
Eoff
1.5
1
TJ = 150°C
Er
TJ=125°C
0.5
0
TJ=150°C
Eon
TJ=25°C
10
0
10
20
30
40
50
60
5
6
7
8
9
11
12
IC (A)
VGE (V)
Switching Energy Losses vs Gate Resistance
Reverse Bias Safe Operating Area
2.5
70
VCE = 300V
VGE =15V
IC = 30A
Eon
60
50
40
30
20
10
0
2
1.5
1
TJ = 150°C
Eoff
VGE=15V
TJ=150°C
RG=10Ω
0.5
0
Er
Eon
0
10
20
30
40
50
60
70
0
100 200 300 400 500 600 700
CE (V)
Gate Resistance (ohms)
V
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
1.8
IGBT
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0.9
0.7
0.5
0.3
0.1
Single Pulse
0.01
0.05
0.00001
0.0001
0.001
0.1
1
10
Rectangular Pulse Duration in Seconds
4 - 5
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APTGT30H60T3G
Operating Frequency vs Collector Current
Forward Characteristic of diode
60
50
40
30
20
10
0
120
100
80
60
40
20
0
VCE =300V
D=50%
RG=10Ω
ZCS
TJ=150°C
Tc=85°C
ZVS
TJ=125°C
TJ=150°C
Hard
switching
TJ=25°C
0
0.4
0.8
1.2
F (V)
1.6
2
2.4
0
10
20
C (A)
30
40
V
I
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
3
2.5
2
Diode
0.9
0.7
0.5
1.5
1
0.3
0.5
0.1
0.05
Single Pulse
0
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration in Seconds
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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