APTGT30SK170T1G
更新时间:2024-09-18 08:13:08
品牌:MICROSEMI
描述:Buck chopper Trench + Field Stop IGBT® Power Module
APTGT30SK170T1G 概述
Buck chopper Trench + Field Stop IGBT® Power Module 降压斩波沟道+场站IGBT®电源模块 IGBT
APTGT30SK170T1G 规格参数
是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | 包装说明: | FLANGE MOUNT, R-XUFM-T12 |
针数: | 12 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.73 |
Is Samacsys: | N | 外壳连接: | ISOLATED |
最大集电极电流 (IC): | 45 A | 集电极-发射极最大电压: | 1700 V |
配置: | SINGLE WITH BUILT-IN DIODE AND THERMISTOR | 门极-发射极最大电压: | 20 V |
JESD-30 代码: | R-XUFM-T12 | JESD-609代码: | e1 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 12 | 最高工作温度: | 150 °C |
封装主体材料: | UNSPECIFIED | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 210 W |
认证状态: | Not Qualified | 子类别: | Insulated Gate BIP Transistors |
表面贴装: | NO | 端子面层: | TIN SILVER COPPER |
端子形式: | THROUGH-HOLE | 端子位置: | UPPER |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | MOTOR CONTROL |
晶体管元件材料: | SILICON | 标称断开时间 (toff): | 850 ns |
标称接通时间 (ton): | 170 ns | VCEsat-Max: | 2.4 V |
Base Number Matches: | 1 |
APTGT30SK170T1G 数据手册
通过下载APTGT30SK170T1G数据手册来全面了解它。这个PDF文档包含了所有必要的细节,如产品概述、功能特性、引脚定义、引脚排列图等信息。
PDF下载APTGT30SK170T1G
Buck chopper
Trench + Field Stop IGBT®
Power Module
VCES = 1700V
IC = 30A @ Tc = 80°C
Application
5
6
11
•
•
AC and DC motor control
Switched Mode Power Supplies
Q1
CR1
Features
7
8
•
Trench + Field Stop IGBT® Technology
3
4
-
-
-
-
-
-
-
Low voltage drop
NTC
Low tail current
Switching frequency up to 20 kHz
Soft recovery parallel diodes
Low diode VF
CR2
1
Low leakage current
RBSOA and SCSOA rated
•
•
•
Very low stray inductance
2
12
Internal thermistor for temperature monitoring
High level of integration
Benefits
•
•
•
•
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
•
•
Low profile
RoHS Compliant
Pins 1/2 ; 3/4 ; 5/6 must be shorted together
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VCES
Collector - Emitter Breakdown Voltage
1700
45
V
TC = 25°C
TC = 80°C
TC = 25°C
IC
Continuous Collector Current
A
30
ICM
VGE
PD
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
70
±20
210
V
W
TC = 25°C
Tj = 125°C
RBSOA Reverse Bias Safe Operating Area
60A@1600V
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
1 – 5
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APTGT30SK170T1G
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
ICES
Zero Gate Voltage Collector Current
VGE = 0V, VCE = 1700V
250
2.4
µA
Tj = 25°C
Tj = 125°C
2.0
2.4
5.8
VGE = 15V
VCE(sat) Collector Emitter saturation Voltage
VGE(th) Gate Threshold Voltage
IGES
V
IC = 30A
VGE = VCE , IC = 1.5mA
VGE = 20V, VCE = 0V
5.2
6.4
600
V
nA
Gate – Emitter Leakage Current
Dynamic Characteristics
Symbol Characteristic
Test Conditions
VGE = 0V, VCE = 25V
f = 1MHz
Min Typ Max Unit
Cies
Cres
Td(on)
Tr
Input Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
2500
pF
90
100
70
Inductive Switching (25°C)
V
GE = ±15V
Bus = 900V
ns
V
Td(off) Turn-off Delay Time
650
IC = 30A
RG = 18Ω
Tf
Td(on)
Tr
Fall Time
Turn-on Delay Time
Rise Time
80
100
Inductive Switching (125°C)
V
GE = ±15V
Bus = 900V
70
750
ns
V
Td(off) Turn-off Delay Time
IC = 30A
RG = 18Ω
Tf
Fall Time
100
V
GE = ±15V
Bus = 900V
Eon
Turn-on Switching Energy
Tj = 125°C
Tj = 125°C
17
mJ
15
V
IC = 30A
RG = 18Ω
Eoff
Turn-off Switching Energy
Chopper diode ratings and characteristics
Symbol Characteristic
Test Conditions
VR=1700V
IF = 50A
Min Typ Max Unit
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
DC Forward Current
VRRM
IRM
IF
1700
V
µA
A
Tj = 25°C
Tj = 125°C
TC=80°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
250
500
50
1.8
1.9
385
490
14
2.2
VF
Diode Forward Voltage
V
V
GE = 0V
trr
Qrr
Er
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Energy
ns
µC
mJ
IF = 50A
VR = 900V
di/dt =800A/µs
23
6
12
2 – 5
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APTGT30SK170T1G
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
IGBT
Diode
0.60
0.70
°C/W
V
RthJC
Junction to Case Thermal Resistance
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
VISOL
TJ
3500
-40
-40
-40
2.5
150
125
100
4.7
80
°C
TSTG
TC
Operating Case Temperature
Torque Mounting torque
To heatsink
M4
N.m
g
Wt
Package Weight
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic
Min Typ Max Unit
R25
Resistance @ 25°C
50
kΩ
K
B 25/85 T25 = 298.15 K
3952
R25
T: Thermistor temperature
RT: Thermistor value at T
RT
=
1
1
T
25/ 85
exp B
−
T25
SP1 Package outline (dimensions in mm)
See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com
3 – 5
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APTGT30SK170T1G
Typical Performance Curve
Output Characteristics (VGE=15V)
Output Characteristics
60
60
50
40
30
20
10
0
TJ = 125°C
50
TJ=25°C
VGE=19V
40
VGE=15V
TJ=125°C
30
VGE=13V
20
VGE=9V
10
0
0
0.5
1
1.5
2
2.5
3
3.5
4
0
1
2
3
4
5
VCE (V)
V
CE (V)
Energy losses vs Collector Current
Transfert Characteristics
60
50
40
30
20
10
0
40
35
30
25
20
15
10
5
VCE = 900V
Eon
TJ=25°C
VGE = 15V
RG = 18 Ω
TJ = 125°C
Eoff
TJ=125°C
Er
TJ=125°C
0
0
20
40
60
80
100
5
6
7
8
9
10
11
I
C (A)
V
GE (V)
Switching Energy Losses vs Gate Resistance
80
Reverse Bias Safe Operating Area
70
VCE = 900V
60
50
40
30
20
10
0
VGE =15V
IC = 30A
TJ = 125°C
Eon
60
40
20
0
Eoff
Er
VGE=15V
TJ=125°C
RG=18 Ω
0
400
800
1200
1600
0
20
40
60
80
100
120
VCE (V)
Gate Resistance (ohms)
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
IGBT
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
4 – 5
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APTGT30SK170T1G
Operating Frequency vs Collector Current
Forward Characteristic of diode
45
40
35
30
25
20
15
10
5
100
VCE=900V
D=50%
ZVS
TJ=25°C
80
RG=18 Ω
TJ=125°C
TC=75°C
60
TJ=125°C
40
ZCS
hard
switching
20
TJ=125°C
0
0
0
0.5
1
1.5
VF (V)
2
2.5
3
0
10
20
30
IC (A)
40
50
60
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
Diode
0.9
0.7
0.5
0.3
0.1
Single Pulse
0.05
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
5 – 5
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