APTGT30H170T3 [ADPOW]
Full - Bridge Trench IGBT Power Module; 全 - 桥沟道IGBT功率模块
| 型号： | APTGT30H170T3 |
| 厂家： | 
ADVANCED POWER TECHNOLOGY |
| 描述： | Full - Bridge Trench IGBT Power Module |
| 文件： | 总5页 (文件大小：292K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APTGT30H170T3
VCES = 1700V
Full - Bridge
Trench IGBT® Power Module
IC = 30A @ Tc = 80°C
Application
13 14
•
•
•
•
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Q1
Q3
CR1
22
CR3
11
10
18
19
Features
7
8
•
Trench + Field Stop IGBT® Technology
-
-
-
-
-
-
-
-
Low voltage drop
23
Low tail current
Q2
29
Q4
Switching frequency up to 20 kHz
Soft recovery parallel diodes
Low diode VF
CR2
CR4
26
27
4
3
Low leakage current
Avalanche energy rated
RBSOA and SCSOA rated
30
31
32
•
•
•
•
Kelvin emitter for easy drive
Low stray inductance
15
16
R1
High level of integration
Internal thermistor for temperature monitoring
28 27 26 25
23 22
20 19 18
Benefits
29
30
16
15
•
Outstanding performance at high frequency
operation
•
•
•
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
31
32
14
13
•
•
•
Low profile
2
3
4
7
8
10 11
12
Easy paralleling due to positive TC of VCEsat
Each leg can be easily paralleled to achieve a phase
leg of twice the current capability
All multiple inputs and outputs must be shorted together
Example: 13/14 ; 29/30 ; 22/23 …
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VCES
Collector - Emitter Breakdown Voltage
1700
45
V
TC = 25°C
TC = 80°C
TC = 25°C
IC
Continuous Collector Current
A
30
ICM
VGE
PD
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
70
±20
210
V
W
TC = 25°C
Tj = 125°C
RBSOA Reverse Bias Safe Operation Area
120A@1600V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
1 - 5
APT website – http://www.advancedpower.com
APTGT30H170T3
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
BVCES Collector - Emitter Breakdown Voltage
VGE = 0V, IC = 1.5mA
VGE = 0V, VCE = 1700V
1700
V
mA
ICES
Zero Gate Voltage Collector Current
3
Tj = 25°C
Tj = 125°C
2.0
2.4
5.8
2.4
VGE = 15V
IC = 30A
VGE = VCE , IC = 1.5mA
VCE(on) Collector Emitter on Voltage
VGE(th) Gate Threshold Voltage
V
5.2
6.4
600
V
nA
IGES
Gate – Emitter Leakage Current
VGE = 20V, VCE = 0V
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
Cies
Cres
Input Capacitance
Reverse Transfer Capacitance
VGE = 0V, VCE = 25V
2500
pF
f = 1MHz
90
Inductive Switching (25°C)
VGE = ±15V
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
Tf Fall Time
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
100
70
650
ns
VBus = 900V
IC = 30A
80
100
RG = 18Ω
Inductive Switching (125°C)
VGE = ±15V
70
750
ns
VBus = 900V
IC = 30A
Tf
Eon
Eoff
Fall Time
Turn-on Switching Energy X
Turn-off Switching Energy Y
100
RG = 18Ω
18
mJ
19
Reverse diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
VRRM
Maximum Peak Repetitive Reverse Voltage
1700
V
Tj = 25°C
VR=1700V
250
500
2.2
IRM
Maximum Reverse Leakage Current
µA
Tj = 125°C
IF = 50A
Tj = 25°C
1.8
1.9
8
VF
Er
Diode Forward Voltage
V
VGE = 0V
Tj = 125°C
IF = 50A
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Reverse Recovery Energy
VR = 900V
di/dt =990A/µs
IF = 50A
mJ
15
18
29
Qrr
Reverse Recovery Charge
µC
VR = 900V
di/dt =990A/µs
Temperature sensor NTC
Symbol Characteristic
Min Typ Max Unit
R25
Resistance @ 25°C
68
4080
kΩ
B25/85 T25 = 298.16 K
K
R25
T: Thermistor temperature
RT: Thermistor value at T
RT
=
1
1
T
25/85
exp B
−
T25
2 - 5
APT website – http://www.advancedpower.com
APTGT30H170T3
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
IGBT
Diode
0.6
0.9
RthJC
Junction to Case
°C/W
V
VISOL
TJ
TSTG
TC
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
3500
-40
150
125
100
4.7
°C
-40
Operating Case Temperature
-40
Torque Mounting torque
Wt
To heatsink
M4
N.m
g
Package Weight
110
Package outline
2 8
1 7
1
12
3 - 5
APT website – http://www.advancedpower.com
APTGT30H170T3
Typical Performance Curve
Output Characteristics (VGE=15V)
Output Characteristics
60
50
40
30
20
10
0
80
70
60
50
40
30
20
10
0
T= 125°C
VGE=17V
TJ=25°C
VGE=15V
VGE=13V
TJ=125°C
VGE=9V
0
0.5
1
1.5
2
2.5
3
3.5
4
0
1
2
3
4
5
VCE (V)
VCE (V)
Energy losses vs Collector Current
Transfert Characteristics
80
60
40
20
0
60
VCE = 900V
Eon
V
R
GE = 15V
G = 18 Ω
50
40
30
20
10
0
TJ=25°C
TJ = 125°C
Eoff
Er
TJ=125°C
0
20
40
60
80
100
5
6
7
8
9
10
11
I
C (A)
VGE (V)
Switching Energy Losses vs Gate Resistance
80
Reverse Safe Operating Area
140
120
100
80
VCE = 900V
V
GE =15V
C = 30A
TJ = 125°C
Eon
60
40
20
0
I
60
Eoff
100
VGE=15V
TJ=125°C
RG=18 Ω
40
Er
20
0
0
400
800
1200
1600
0
20
40
60
80
120
Gate Resistance (ohms)
VCE (V)
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
IGBT
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
4 - 5
APT website – http://www.advancedpower.com
APTGT30H170T3
Forward Characteristic of diode
TJ=25°C
Operating Frequency vs Collector Current
45
40
35
30
25
20
15
10
5
100
80
60
40
20
0
VCE=900V
D=50%
RG=18 Ω
ZVS
TJ=125°C
TC=75°C
ZCS
TJ=125°C
hard
switching
0
0
0.5
1
1.5
F (V)
2
2.5
3
0
10
20
30
40
50
60
V
IC (A)
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
1
Diode
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0.9
0.7
0.5
0.3
0.1
Single Pulse
0.05
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products arecovered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
5 - 5
APT website – http://www.advancedpower.com
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