APTGT30H170T3G [MICROSEMI]
Full - Bridge Trench + Field Stop IGBT Power Module; 全 - 桥沟道+场站IGBT功率模块
| 型号： | APTGT30H170T3G |
| 厂家： | 
Microsemi |
| 描述： | Full - Bridge Trench + Field Stop IGBT Power Module |
| 文件： | 总5页 (文件大小：265K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APTGT30H170T3G
Full - Bridge
Trench + Field Stop IGBT®
Power Module
VCES = 1700V
IC = 30A @ Tc = 80°C
Application
13 14
•
•
•
•
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Q1
Q3
CR1
22
CR3
11
10
18
19
Features
7
8
•
Trench + Field Stop IGBT® Technology
-
-
-
-
-
-
-
-
Low voltage drop
23
Low tail current
Q2
29
Q4
Switching frequency up to 20 kHz
Soft recovery parallel diodes
Low diode VF
CR2
CR4
26
27
4
3
Low leakage current
Avalanche energy rated
RBSOA and SCSOA rated
30
31
32
•
•
•
•
Kelvin emitter for easy drive
Low stray inductance
15
16
R1
High level of integration
Internal thermistor for temperature monitoring
28 27 26 25
23 22
20 19 18
Benefits
29
30
16
15
•
Outstanding performance at high frequency
operation
•
•
•
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
31
32
14
13
•
•
•
Low profile
2
3
4
7
8
10 11
12
Easy paralleling due to positive TC of VCEsat
Each leg can be easily paralleled to achieve a phase
leg of twice the current capability
RoHS Compliant
All multiple inputs and outputs must be shorted together
Example: 13/14 ; 29/30 ; 22/23 …
•
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VCES
Collector - Emitter Breakdown Voltage
1700
45
V
TC = 25°C
TC = 80°C
TC = 25°C
IC
Continuous Collector Current
A
30
ICM
VGE
PD
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
70
±20
210
V
W
TC = 25°C
Tj = 125°C
RBSOA Reverse Bias Safe Operating Area
60A@1600V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
1 - 5
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APTGT30H170T3G
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
ICES
Zero Gate Voltage Collector Current
VGE = 0V, VCE = 1700V
250
2.4
µA
Tj = 25°C
Tj = 125°C
2.0
2.4
5.8
VGE = 15V
VCE(sat) Collector Emitter saturation Voltage
VGE(th) Gate Threshold Voltage
IGES
V
IC = 30A
VGE = VCE , IC = 1.5mA
VGE = 20V, VCE = 0V
5.2
6.4
600
V
nA
Gate – Emitter Leakage Current
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
Cies
Cres
Input Capacitance
Reverse Transfer Capacitance
VGE = 0V, VCE = 25V
2500
pF
f = 1MHz
90
Inductive Switching (25°C)
VGE = ±15V
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
Tf Fall Time
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
100
70
650
ns
VBus = 900V
IC = 30A
80
100
RG = 18Ω
Inductive Switching (125°C)
VGE = ±15V
70
750
ns
VBus = 900V
IC = 30A
Tf
Eon
Eoff
Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
100
RG = 18Ω
17
mJ
15
Reverse diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
VRRM
Maximum Peak Repetitive Reverse Voltage
1700
V
Tj = 25°C
VR=1700V
250
500
IRM
Maximum Reverse Leakage Current
µA
Tj = 125°C
IF
DC Forward Current
TC=80°C
50
1.8
1.9
385
490
14
23
6
12
A
V
IF = 50A
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
2.2
VF
Diode Forward Voltage
VGE = 0V
trr
Qrr
Er
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Energy
ns
µC
mJ
IF = 50A
VR = 900V
di/dt =800A/µs
Tj = 125°C
Tj = 25°C
Tj = 125°C
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic
R25 Resistance @ 25°C
B25/85 T25 = 298.15 K
Min Typ Max Unit
50
kΩ
K
3952
R25
T: Thermistor temperature
RT: Thermistor value at T
RT
=
1
1
T
25/85
exp B
−
T25
2 - 5
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APTGT30H170T3G
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
IGBT
Diode
0.6
0.7
RthJC
Junction to Case Thermal Resistance
°C/W
V
VISOL
TJ
TSTG
TC
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
3500
-40
-40
-40
2.5
150
125
100
4.7
°C
Operating Case Temperature
Torque Mounting torque
Wt
To heatsink
M4
N.m
g
Package Weight
110
SP3 Package outline (dimensions in mm)
2 8
1 7
1
12
See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com
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APTGT30H170T3G
Typical Performance Curve
Output Characteristics (VGE=15V)
Output Characteristics
60
60
50
40
30
20
10
0
TJ = 125°C
50
40
30
20
10
0
TJ=25°C
VGE=19V
VGE=15V
VGE=13V
TJ=125°C
VGE=9V
0
0.5
1
1.5
2
2.5
3
3.5
4
0
1
2
3
4
5
VCE (V)
V
CE (V)
Energy losses vs Collector Current
Transfert Characteristics
60
50
40
30
20
10
0
40
35
30
25
20
15
10
5
VCE = 900V
Eon
TJ=25°C
VGE = 15V
RG = 18 Ω
TJ = 125°C
Eoff
TJ=125°C
Er
TJ=125°C
0
0
20
40
60
80
100
5
6
7
8
9
10
11
I
C (A)
VGE (V)
Switching Energy Losses vs Gate Resistance
80
Reverse Bias Safe Operating Area
70
VCE = 900V
60
50
40
30
20
10
0
VGE =15V
IC = 30A
TJ = 125°C
Eon
60
40
20
0
Eoff
Er
VGE=15V
TJ=125°C
RG=18 Ω
0
400
800
CE (V)
1200
1600
0
20
40
60
80
100
120
V
Gate Resistance (ohms)
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
IGBT
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
4 - 5
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APTGT30H170T3G
Operating Frequency vs Collector Current
Forward Characteristic of diode
45
40
35
30
25
20
15
10
5
100
VCE=900V
D=50%
ZVS
TJ=25°C
80
60
40
20
0
RG=18 Ω
TJ=125°C
TC=75°C
TJ=125°C
ZCS
hard
switching
TJ=125°C
0.5
0
0
1
1.5
VF (V)
2
2.5
3
0
10
20
30
C (A)
40
50
60
I
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
1
Diode
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0.9
0.7
0.5
0.3
0.1
Single Pulse
0.05
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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MICROSEMI
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