APTGT30DSK60T3 [ADPOW]
Dual Buck chopper Trench + Field Stop IGBT Power Module; 双降压斩波沟道+场站IGBT功率模块型号: | APTGT30DSK60T3 |
厂家: | ADVANCED POWER TECHNOLOGY |
描述: | Dual Buck chopper Trench + Field Stop IGBT Power Module |
文件: | 总5页 (文件大小:285K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
APTGT30DSK60T3
Dual Buck chopper
Trench + Field Stop IGBT®
VCES = 600V
IC = 30A @ Tc = 80°C
13 14
Application
•
•
AC and DC motor control
Q1
Q2
Switched Mode Power Supplies
18
19
11
10
Features
•
Trench + Field Stop IGBT® Technology
22
23
7
8
-
-
-
-
-
-
-
-
Low voltage drop
Low tail current
Switching frequency up to 20 kHz
Soft recovery parallel diodes
Low diode VF
CR1
CR2
32
Low leakage current
Avalanche energy rated
RBSOA and SCSOA rated
•
•
Kelvin emitter for easy drive
Very low stray inductance
29
15
30
31
R1
16
-
Symmetrical design
•
•
High level of integration
Internal thermistor for temperature monitoring
28 27 26 25
23 22
20 19 18
Benefits
29
16
•
•
•
•
•
•
•
•
Stable temperature behavior
30
15
Very rugged
Solderable terminals for easy PCB mounting
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
Each leg can be easily paralleled to achieve a
single buck of twice the current capability.
31
32
14
13
2
3
4
7
8
10 11
12
All multiple inputs and outputs must be shorted together
Example: 13/14 ; 29/30 ; 22/23 …
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
V
VCES
Collector - Emitter Breakdown Voltage
600
TC = 25°C
50
IC
Continuous Collector Current
A
TC = 80°C
TC = 25°C
30
ICM
VGE
PD
Pulsed Collector Current
Gate – Emitter Voltage
60
±20
V
W
TC = 25°C
TJ = 150°C
Maximum Power Dissipation
90
RBSOA Reverse Bias Safe Operating Area
60A @ 550V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
1 - 5
APT website – http://www.advancedpower.com
APTGT30DSK60T3
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
ICES
Zero Gate Voltage Collector Current
VGE = 0V, VCE = 600V
250
1.9
µA
Tj = 25°C
Tj = 150°C
1.5
1.7
5.8
VGE =15V
VCE(sat) Collector Emitter Saturation Voltage
VGE(th) Gate Threshold Voltage
IGES
V
IC = 30A
VGE = VCE , IC = 400µA
VGE = 20V, VCE = 0V
5.0
6.5
300
V
nA
Gate – Emitter Leakage Current
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
1600
110
50
110
45
200
40
VGE = 0V
VCE = 25V
f = 1MHz
pF
Inductive Switching (25°C)
VGE = ±15V
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
Tf Fall Time
Td(on) Turn-on Delay Time
Tr Rise Time
ns
VBus = 300V
IC = 30A
RG = 15Ω
Inductive Switching (150°C)
120
50
VGE = ±15V
ns
VBus = 300V
Td(off) Turn-off Delay Time
250
IC = 30A
Tf
Eon
Eoff
Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
60
RG = 15Ω
0.53
1.05
mJ
Chopper diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
VRRM
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
600
V
µA
A
Tj = 25°C
VR=600V
250
500
IRM
Tj = 150°C
IF(AV)
VF
Maximum Average Forward Current
Diode Forward Voltage
50% duty cycle
Tc = 80°C
30
1.6
1.5
IF = 30A
Tj = 25°C
Tj = 150°C
2
VGE = 0V
V
Tj = 25°C
Tj = 150°C
Tj = 25°C
Tj = 150°C
120
210
1.5
3.1
trr
Reverse Recovery Time
Reverse Recovery Charge
ns
IF = 30A
VR = 300V
di/dt =1800A/µs
Qrr
µC
2 - 5
APT website – http://www.advancedpower.com
APTGT30DSK60T3
Temperature sensor NTC (see application note APT0406 on www.advancedpower.com for more information).
Symbol Characteristic
R25 Resistance @ 25°C
B25/85 T25 = 298.15 K
Min Typ Max Unit
50
kΩ
K
3952
R25
T: Thermistor temperature
RT: Thermistor value at T
RT
=
1
1
T
25/85
exp B
−
T25
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
IGBT
Diode
1.6
RthJC
Junction to Case
°C/W
2.45
VISOL
TJ
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
2500
-40
-40
-40
1.5
V
175
125
100
4.7
°C
TSTG
TC
Operating Case Temperature
Torque Mounting torque
Wt
To heatsink
M4
N.m
g
Package Weight
110
Package outline (dimensions in mm)
2 8
1 7
1
12
3 - 5
APT website – http://www.advancedpower.com
APTGT30DSK60T3
Typical Performance Curve
Output Characteristics (VGE=15V)
Output Characteristics
60
60
50
40
30
20
10
0
VGE=19V
TJ=25°C
TJ = 150°C
50
40
30
20
10
0
TJ=125°C
VGE=13V
VGE=15V
TJ=150°C
VGE=9V
TJ=25°C
0
0.5
1
1.5
V
2
2.5
3
3.5
0
0.5
1
1.5
VCE (V)
2
2.5
3
CE (V)
Energy losses vs Collector Current
Transfert Characteristics
60
50
40
30
20
10
0
2
VCE = 300V
VGE = 15V
Eoff
TJ=25°C
R
G = 15Ω
1.5
1
TJ = 150°C
Eon
Er
TJ=125°C
0.5
0
TJ=150°C
Eon
TJ=25°C
10
0
10
20
30
C (A)
40
50
60
5
6
7
8
9
11
12
I
VGE (V)
Switching Energy Losses vs Gate Resistance
3.5
Reverse Bias Safe Operating Area
70
VCE = 300V
GE =15V
C = 30A
Eon
3
2.5
2
V
I
60
50
40
30
20
10
0
TJ = 150°C
Eoff
Eoff
1.5
1
Eon
VGE=15V
TJ=150°C
RG=15Ω
Er
0.5
0
10 20 30 40 50 60 70 80 90
0
100 200 300 400 500 600 700
VCE (V)
Gate Resistance (ohms)
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
1.8
IGBT
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0.9
0.7
0.5
0.3
0.1
Single Pulse
0.05
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration in Seconds
4 - 5
APT website – http://www.advancedpower.com
APTGT30DSK60T3
Operating Frequency vs Collector Current
Forward Characteristic of diode
60
120
100
80
60
40
20
0
VCE =300V
D=50%
50
40
30
20
10
0
RG=15Ω
TJ=150°C
ZCS
ZVS
Tc=85°C
TJ=125°C
TJ=150°C
Hard
switching
TJ=25°C
1.6
0
10
20
30
40
0
0.4
0.8
1.2
VF (V)
2
2.4
IC (A)
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
3
2.5
2
Diode
0.9
0.7
1.5
1
0.5
0.3
0.5
0.1
0.05
Single Pulse
0
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration in Seconds
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products arecovered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
5 - 5
APT website – http://www.advancedpower.com
相关型号:
APTGT30SK170D1G
Insulated Gate Bipolar Transistor, 45A I(C), 1700V V(BR)CES, N-Channel, MODULE-7
MICROSEMI
©2020 ICPDF网 联系我们和版权申明