APTGT30A60T1G [MICROSEMI]
Phase leg Trench + Field Stop IGBT® Power Module; 相脚沟道+场站IGBT ？电源模块
| 型号： | APTGT30A60T1G |
| 厂家： | 
Microsemi |
| 描述： | Phase leg Trench + Field Stop IGBT® Power Module |
| 文件： | 总5页 (文件大小：275K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APTGT30A60T1G
Phase leg
Trench + Field Stop IGBT®
Power Module
VCES = 600V
IC = 30A @ Tc = 80°C
Application
5
6
11
•
•
•
•
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Q1
CR1
CR2
7
8
Features
•
Trench + Field Stop IGBT® Technology
3
4
NTC
-
-
-
-
-
-
-
Low voltage drop
Low tail current
Q2
Switching frequency up to 20 kHz
Soft recovery parallel diodes
Low diode VF
9
Low leakage current
10
RBSOA and SCSOA rated
•
Very low stray inductance
-
Symmetrical design
12
1
2
•
•
Internal thermistor for temperature monitoring
High level of integration
Benefits
•
•
•
•
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
•
•
Low profile
RoHS Compliant
Pins 1/2 ; 3/4 ; 5/6 must be shorted together
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
V
VCES
Collector - Emitter Breakdown Voltage
600
50
TC = 25°C
TC = 80°C
TC = 25°C
IC
Continuous Collector Current
A
30
ICM
VGE
PD
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
60
±20
90
V
W
TC = 25°C
TJ = 150°C
RBSOA Reverse Bias Safe Operating Area
60A @ 550V
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
1 – 5
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APTGT30A60T1G
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
ICES
Zero Gate Voltage Collector Current
VGE = 0V, VCE = 600V
250
1.9
µA
Tj = 25°C
Tj = 150°C
1.5
1.7
5.8
VGE =15V
VCE(sat) Collector Emitter Saturation Voltage
VGE(th) Gate Threshold Voltage
IGES
V
IC = 30A
VGE = VCE , IC = 400µA
VGE = 20V, VCE = 0V
5.0
6.5
300
V
nA
Gate – Emitter Leakage Current
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
Cies
Coes
Cres
Td(on)
Tr
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
1600
110
50
110
45
200
40
VGE = 0V
VCE = 25V
pF
f = 1MHz
Inductive Switching (25°C)
V
GE = ±15V
Bus = 300V
ns
V
Td(off) Turn-off Delay Time
IC = 30A
RG = 10Ω
Tf
Td(on)
Tr
Fall Time
Turn-on Delay Time
Rise Time
Inductive Switching (150°C)
120
50
V
GE = ±15V
Bus = 300V
ns
V
Td(off) Turn-off Delay Time
Tf
250
60
IC = 30A
RG = 10Ω
Fall Time
Tj = 25°C
Tj = 150°C
Tj = 25°C
Tj = 150°C
0.16
0.3
VGE = ±15V
Eon
Turn-on Switching Energy
mJ
mJ
V
Bus = 300V
IC = 30A
0.7
Eoff
Turn-off Switching Energy
RG = 10Ω
1.05
Reverse diode ratings and characteristics
Symbol Characteristic
Test Conditions
VR=600V
Min Typ Max Unit
Maximum Peak Repetitive Reverse Voltage
VRRM
600
V
Tj = 25°C
Tj = 150°C
Tc = 80°C
Tj = 25°C
Tj = 150°C
250
500
IRM
Maximum Reverse Leakage Current
µA
IF
DC Forward Current
30
1.6
1.5
A
V
IF = 30A
2
VF
Diode Forward Voltage
VGE = 0V
Tj = 25°C
Tj = 150°C
Tj = 25°C
Tj = 150°C
Tj = 25°C
Tj = 150°C
100
150
1.5
3.1
0.34
0.75
trr
Qrr
Er
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Energy
ns
µC
mJ
IF = 30A
VR = 300V
di/dt =1800A/µs
2 – 5
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APTGT30A60T1G
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
IGBT
Diode
1.6
°C/W
V
RthJC
Junction to Case Thermal Resistance
2.45
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
VISOL
TJ
2500
-40
-40
-40
2.5
175
125
100
4.7
80
°C
TSTG
TC
Operating Case Temperature
Torque Mounting torque
To heatsink
M4
N.m
g
Wt
Package Weight
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic
Min Typ Max Unit
R25
Resistance @ 25°C
50
kΩ
K
B 25/85 T25 = 298.15 K
3952
R25
T: Thermistor temperature
RT: Thermistor value at T
RT
=
1
1
T
25/ 85
exp B
−
T25
SP1 Package outline (dimensions in mm)
See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com
3 – 5
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APTGT30A60T1G
Typical Performance Curve
Output Characteristics (VGE=15V)
Output Characteristics
60
50
40
30
20
10
0
60
50
40
30
20
10
0
VGE=19V
TJ=25°C
TJ = 150°C
TJ=125°C
VGE=13V
VGE=15V
TJ=150°C
VGE=9V
TJ=25°C
0
0.5
1
1.5
2
2.5
3
3.5
0
0.5
1
1.5
VCE (V)
2
2.5
3
VCE (V)
Energy losses vs Collector Current
Transfert Characteristics
60
50
40
30
20
10
0
2
VCE = 300V
TJ=25°C
VGE = 15V
RG = 10Ω
Eoff
1.5
1
TJ = 150°C
Er
TJ=125°C
TJ=150°C
0.5
0
Eon
TJ=25°C
0
10
20
30
40
50
60
5
6
7
8
9
10
11
12
IC (A)
V
GE (V)
Switching Energy Losses vs Gate Resistance
Reverse Bias Safe Operating Area
2.5
70
VCE = 300V
VGE =15V
IC = 30A
Eon
60
50
40
30
20
10
0
2
1.5
1
TJ = 150°C
Eoff
VGE=15V
TJ=150°C
RG=10Ω
0.5
0
Er
Eon
0
10
20
30
40
50
60
70
0
100 200 300 400 500 600 700
CE (V)
V
Gate Resistance (ohms)
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
1.8
IGBT
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0.9
0.7
0.5
0.3
0.1
Single Pulse
0.01
0.05
0.00001
0.0001
0.001
0.1
1
10
Rectangular Pulse Duration in Seconds
4 – 5
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APTGT30A60T1G
Operating Frequency vs Collector Current
Forward Characteristic of diode
60
50
40
30
20
10
0
120
100
80
60
40
20
0
VCE=300V
D=50%
RG=10Ω
TJ=150°C
Tc=85°C
ZCS
ZVS
TJ=125°C
TJ=150°C
Hard
switching
TJ=25°C
0
0.4
0.8
1.2
VF (V)
1.6
2
2.4
0
10
20
IC (A)
30
40
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
3
2.5
2
Diode
0.9
0.7
0.5
1.5
1
0.3
0.5
0
0.1
0.05
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration in Seconds
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
5 – 5
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